WO2020241461A1 - Stage structure, substrate processing device, and method for controlling stage structure - Google Patents

Stage structure, substrate processing device, and method for controlling stage structure Download PDF

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Publication number
WO2020241461A1
WO2020241461A1 PCT/JP2020/020190 JP2020020190W WO2020241461A1 WO 2020241461 A1 WO2020241461 A1 WO 2020241461A1 JP 2020020190 W JP2020020190 W JP 2020020190W WO 2020241461 A1 WO2020241461 A1 WO 2020241461A1
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WO
WIPO (PCT)
Prior art keywords
stage structure
substrate
annular member
arc
elevating
Prior art date
Application number
PCT/JP2020/020190
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French (fr)
Japanese (ja)
Inventor
敦史 久保
新藤　健弘
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東京エレクトロン株式会社
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Publication of WO2020241461A1 publication Critical patent/WO2020241461A1/en

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping

Definitions

  • the present disclosure relates to a stage structure, a substrate processing apparatus, and a control method for the stage structure.
  • Patent Document 1 discloses a film forming apparatus including a mounting table in which a heater for heating a substrate is embedded.
  • the mounting table is provided with a through hole that penetrates the mounting table in the thickness direction.
  • the through hole is provided with a support pin that can be raised and lowered. The support pins lift and support the board.
  • the present disclosure provides a stage structure, a substrate processing apparatus, and a method for controlling the stage structure for improving the in-plane uniformity of the substrate temperature.
  • a disk-shaped mounting base and an annular member arranged on the outer peripheral side of the above-mentioned mounting base and divided into at least two or more in the circumferential direction.
  • a stage structure including an elevating portion for raising and lowering at least one of arc members formed by dividing the annular member.
  • stage structure a substrate processing apparatus, and a control method of the stage structure for improving the in-plane uniformity of the substrate temperature.
  • An example of a CC cross-sectional view of a stage structure An example of a plan view of a stage structure included in the substrate processing apparatus according to the second embodiment.
  • FIGS. 1 and 2 are examples of vertical cross-sectional views of the substrate processing apparatus 100 according to the first embodiment. Further, FIG. 1 shows a state at the time of the film forming process. FIG. 2 shows a state at the time of delivery of the substrate W.
  • the substrate processing apparatus 100 shown in FIGS. 1 and 2 supplies TiCl 4 gas as a raw material gas and NH 3 gas as a reducing gas to the substrate W to form a TiN film on the surface of the substrate W. It is an ALD (Atomic Layer Deposition) device.
  • ALD Atomic Layer Deposition
  • the substrate processing apparatus 100 includes a processing container 1, a stage structure 2, a top plate portion 3, an exhaust duct 4, a first vacuum exhaust portion 5, a second vacuum exhaust portion 6, and a processing gas supply unit. 7 and a control unit 9 are provided.
  • the processing container 1 is made of a metal such as aluminum and is formed in a substantially bottomed cylindrical shape. On the side wall of the processing container 1, a carry-in / outlet 11 for delivering the substrate W is formed.
  • the carry-in outlet 11 is provided with a gate valve 12 that opens and closes the carry-in outlet 11.
  • An exhaust duct 4 is provided on the side wall of the processing container 1.
  • the exhaust duct 4 is made of a metal such as aluminum, and is formed in an annular shape having a rectangular vertical cross section.
  • An opening 47 is formed on the inner peripheral surface side of the exhaust duct 4 so as to open toward the inside of the processing container 1 along the circumferential direction. The gas flowing out of the processing space 30 described later is exhausted into the exhaust duct 4 through the opening 47.
  • a first exhaust port 41 is formed on the outer wall surface of the exhaust duct 4.
  • An exhaust pipe 42 is connected to the first exhaust port 41.
  • the exhaust pipe 42 is connected to the vacuum exhaust pump 40 by interposing a pressure adjusting unit 43 and a first exhaust valve 44 from the first exhaust port 41 side.
  • the first exhaust port 41, the exhaust pipe 42, the pressure adjusting unit 43, the first exhaust valve 44, and the vacuum exhaust pump 40 correspond to the first vacuum exhaust unit 5.
  • a second exhaust port 15 is formed on the bottom surface of the processing container 1.
  • An exhaust pipe 16 is connected to the second exhaust port 15.
  • the exhaust pipe 16 is connected to the vacuum exhaust pump 40 by interposing a pressure adjusting unit 17 and a second exhaust valve 18 from the second exhaust port 15 side.
  • the second exhaust port 15, the exhaust pipe 16, the pressure adjusting unit 17, the second exhaust valve 18, and the vacuum exhaust pump 40 correspond to the second vacuum exhaust unit 6.
  • the vacuum exhaust pump 40 may be provided individually.
  • a stage structure 2 for mounting the substrate W is provided in the processing container 1.
  • the stage structure 2 has a mounting base 21 in which the heater 20 is embedded and a divided annular member 22. Further, the stage structure 2 has an elevating portion (elevating mechanism 24, 28) for elevating and lowering at least one part (arc members 22b, 22d) of the divided annular members 22 with respect to the mounting base 21.
  • the mounting base 21 is made of a ceramic material such as aluminum nitride or a metal such as aluminum, and is formed in a disk shape. Inside the mounting base 21, a heater 20 for heating the substrate W to a film forming temperature (for example, 50 ° C. to 700 ° C.) is embedded. The heater 20 is supplied with power from a heater power source (not shown) to generate heat. By heating the mounting base 21 with the heater 20, the substrate W mounted on the mounting base 21 (stage structure 2) can be heated.
  • a heater power source not shown
  • the annular member 22 is made of a ceramic material such as alumina or quartz, and is formed in a flat cylindrical shape with upper and lower ends open.
  • the upper end side of the annular member 22 is formed in an annular shape so as to surround the side peripheral surface of the mounting base 21 from the side. There is a slight gap (for example, 0.1 mm) between the inner peripheral surface of the annular member 22 and the side peripheral surface of the mounting base 21 so that the annular member 22 can move up and down with respect to the mounting base 21.
  • the lower end side of the annular member 22 is formed in a tubular shape so that the outer diameter is equal to the outer diameter on the upper end side of the annular member 22 and the inner diameter is larger than the inner diameter on the upper end side of the annular member 22.
  • the length in the axial direction in which the outer peripheral surface of the annular member 22 and the inner peripheral surface of the tubular portion 46 of the partition member 45, which will be described later, face each other is lengthened, and the processing gas flows into the back surface side of the mounting base 21. Suppress that.
  • the annular member 22 is equally divided into four arc members 22a to 22d in the circumferential direction, as will be described later with reference to FIG. 3A.
  • a lifting shaft 23 extending in the vertical direction is provided at the center of the lower surface side of the mounting base 21.
  • the elevating shaft 23 penetrates the opening 13 formed in the bottom surface of the processing container 1 and extends downward, and the lower end thereof is connected to the elevating mechanism 24.
  • the mounting base 21 has a processing position (see FIG. 1), which is a position when processing gas is supplied to the substrate W by the elevating shaft 23 and the elevating mechanism 24 to perform a film forming process, and an external transport mechanism 200. It is possible to move up and down between the substrate W and the transport position (see FIG. 2), which is the position at which the substrate W is delivered.
  • an elevating plate 25 is attached below the processing container 1 of the elevating shaft 23, and the atmosphere inside the processing container 1 is partitioned from the outside air between the bottom surface of the processing container 1 and the elevating plate 25.
  • a bellows 26 that expands and contracts as the mounting base 21 moves up and down is provided.
  • An elevating shaft 27 extending in the vertical direction is provided on the lower surface side of the annular member 22 (arc members 22a to 22d).
  • the elevating shaft 27 penetrates the opening 14 formed in the bottom surface of the processing container 1 and extends downward, and the lower end thereof is connected to the elevating mechanism 28.
  • the elevating shaft 27 and the elevating mechanism 28 are individually provided for each of the four arc members 22a to 22d, and the arc members 22a to 22d can be independently moved up and down.
  • the arc members 22a to 22d have a processing position (see FIG. 1), which is a position when the processing gas is supplied to the substrate W by the elevating shaft 27 and the elevating mechanism 28 to perform the film forming process, and the external transport mechanism 200.
  • the transfer position (see the position indicated by the arc member 22a in FIG. 2), which is a position for forming an opening for inserting the transfer mechanism 200 when the substrate W is transferred between the two, and the external transfer mechanism 200. It is possible to move up and down between the support position (see the position indicated by the arc member 22c in FIG. 2), which is a position for supporting the substrate W when the substrate W is delivered. Further, a bellows 29 is provided between the bottom surface of the processing container 1 and the elevating mechanism 28 to partition the atmosphere inside the processing container 1 from the outside air and expand and contract as the arc members 22a to 22d move up and down.
  • a top plate portion 3 is provided on the exhaust duct 4 provided on the side wall of the processing container 1 so as to close the opening.
  • Gas supply ports 33 and 34 which are arranged side by side in the lateral direction, are opened in the central portion of the lower surface of the top plate portion 3 (the surface facing the stage structure 2).
  • the lower surface of the top plate portion 3 is formed as an inclined surface so as to be lowered from the gas supply ports 33 and 34 toward the outer peripheral side.
  • a flat flat portion 36 is formed on the outer side of the inclined surface over the entire circumference.
  • the flat portion 36 is arranged so as to face the upper surface of the annular member 22 of the stage structure 2 with a gap when the stage structure 2 is raised to the processing position.
  • the substantially flat conical space surrounded by the lower surface of the top plate portion 3 and the upper surface of the stage structure 2 is a processing space 30 in which film formation is performed on the substrate W.
  • the partition member 45 is a ring-shaped member made of a metal such as aluminum, and has a tubular portion 46 formed so as to surround the outer peripheral surface of the annular member 22 at the processing position from the side.
  • a slight gap (for example, 0.1 mm) is provided between the inner peripheral surface of the tubular portion 46 and the outer peripheral surface of the annular member 22 so that the stage structure 2 can be raised and lowered.
  • the partition member 45 divides the inside of the processing container 1 into a space including the upper processing space 30 and a lower lower space 10.
  • the atmosphere in the processing space 30 is exhausted from the gap between the flat portion 36 and the upper surface of the annular member 22, flows on the upper surface side of the partition member 45, and is exhausted from the exhaust duct 4. It is exhausted.
  • the gas supply port 33 is formed at the downstream end of the gas supply path 31 for supplying NH 3 gas as a reducing gas or N 2 gas as an inert gas into the processing space 30.
  • the gas supply port 34 is formed at the downstream end of the gas supply path 32 for supplying the TiCl 4 gas as a raw material gas or the N 2 gas as an inert gas into the processing space 30.
  • the gas supply paths 31 and 32 penetrate the central portion of the top plate portion 3 in the vertical direction.
  • a dispersion plate 35 for colliding the processing gas supplied from the gas supply passages 31 and 32 and dispersing the processing gas in the processing space 30 is provided horizontally. ..
  • N 2 gas supply pipe 65 branched from the middle of the TiCl 4 feed pipe 61 is N 2 gas supply source 50 via are connected.
  • the NH 3 gas supply pipe 51 is connected to the NH 3 gas supply source 52 by interposing a flow rate adjusting unit 53 and a valve 54 from the branch point side.
  • the N 2 gas supply pipe 55 is connected to the N 2 gas supply source 50 by interposing a flow rate adjusting unit 56 and a valve 57 from the branch point side.
  • the TiCl 4 supply pipe 61 is connected to the TiCl 4 gas supply source 62 by interposing a flow rate adjusting unit 63 and a valve 64 from the branch point side.
  • the N 2 gas supply pipe 65 is connected to the N 2 gas supply source 50 by interposing a flow rate adjusting unit 66 and a valve 67 from the branch point side.
  • a temperature raising mechanism such as a heater (not shown) is provided inside the side wall of the processing container 1 or inside the top plate portion 3, and the temperature of the inner surface of the top plate portion 3 and the processing container 1 is a predetermined temperature (for example). , 150 ° C.). This suppresses the precipitation of by-products that serve as a particle source, such as ammonium chloride, due to the reaction of the processing gas, for example, inside the processing container 1.
  • the control unit 9 controls the operation of each unit of the substrate processing device 100.
  • the control unit 9 has a CPU (Central Processing Unit), a ROM (Read Only Memory), and a RAM (Random Access Memory).
  • the CPU executes a desired process according to a recipe stored in a storage area such as RAM.
  • control information of the device for the process condition is set.
  • the control information may be, for example, gas flow rate, pressure, temperature, process time.
  • the recipe and the program used by the control unit 9 may be stored in, for example, a hard disk or a semiconductor memory. Further, the recipe or the like may be set in a predetermined position and read in a state of being housed in a storage medium readable by a portable computer such as a CD-ROM or a DVD.
  • the film forming process in the substrate processing apparatus 100 will be described by taking as an example a case where a TiN film is formed on the substrate W by the ALD process.
  • the substrate W is carried into the processing container 1 of the substrate processing apparatus 100, and the substrate W is placed on the stage structure 2.
  • the structure and operation of the stage structure 2 for delivering the substrate W from the transport mechanism 200 to the stage structure 2 will be described later with reference to FIGS. 3A to 3C.
  • the stage structure 2 on which the substrate W is placed is raised to the processing position (see FIG. 1).
  • the substrate W mounted on the stage structure 2 is heated to a predetermined film formation temperature by the heater 20 embedded in the mounting base 21.
  • a TiN film is formed by an ALD process using TiCl 4 gas and NH 3 gas.
  • the ALD process is a process in which a TiCl 4 supply step, a first purge step, an NH 3 supply step, and a second purge step are repeated for a predetermined cycle to form a TiN film having a desired thickness on the substrate W.
  • the TiCl 4 supply step is a step of supplying the TiCl 4 gas to the treatment space 30. As a result, TiCl 4 gas is adsorbed on the surface of the substrate W.
  • First purge step is a step of supplying N 2 gas to the processing space 30. As a result, excess TiCl 4 gas or the like in the processing space 30 is purged.
  • the NH 3 supply step is a step of supplying NH 3 gas to the processing space 30. As a result, the TiCl 4 adsorbed on the substrate W is reduced.
  • the second purging step is a step of supplying N 2 gas to the processing space 30. As a result, excess NH 3 gas or the like in the processing space 30 is purged.
  • a TiN film having a desired film thickness is formed on the substrate W.
  • the stage structure 2 on which the substrate W is placed is lowered to the transport position (see FIG. 2). Then, the substrate W is carried out from the processing container 1.
  • the structure and operation of the stage structure 2 for delivering the substrate W from the stage structure 2 to the transfer mechanism 200 will be described later with reference to FIGS. 3A to 3C.
  • FIG. 3A is an example of a plan view of the stage structure 2 included in the substrate processing apparatus 100 according to the first embodiment.
  • FIG. 3B is an example of a cross-sectional view taken along the line BB of the stage structure 2.
  • FIG. 3C is an example of a CC sectional view of the stage structure 2.
  • FIGS. 3A and 3B the carry-in outlet 11 (see FIGS. 1 and 2) is assumed to be on the left side of the paper. Further, in FIG. 3C, the carry-in outlet 11 is on the back side of the paper surface. Further, in FIG. 3A, the stage structure 2 in a state where the substrate W is not mounted is shown, and the position where the substrate W is mounted is shown by a chain double-dashed line. Further, FIGS. 3B and 3C show a state in which the substrate W is lifted from the mounting base 21 and the transport mechanism 200 is inserted into the back surface side of the substrate W. Further, in FIGS. 3B and 3C, the elevating shaft 27 for elevating and lowering the annular member 22 is omitted.
  • the annular member 22 is arranged on the outer peripheral side of the disk-shaped mounting base 21.
  • the annular member 22 is equally divided into four arc members 22a to 22d in the circumferential direction.
  • the arc member closest to the carry-in outlet 11 is referred to as the arc member 22a.
  • the arc members adjacent to the arc members 22a are referred to as arc members 22b and 22d, respectively.
  • the arc member farthest from the carry-in outlet 11 is referred to as an arc member 22c.
  • a slight gap (for example, 0.1 mm) is provided between the adjacent arc members 22a to 22d so that the arc members 22a to 22d can be individually raised and lowered.
  • the elevating shaft 27 and the elevating mechanism 28 are individually provided for each of the four arc members 22a to 22d, and the arc members 22a to 22d are independently provided. It can be raised and lowered.
  • the outer diameter of the mounting base 21 is smaller than the outer diameter of the substrate W
  • the inner diameter of the upper surface of the annular member 22 is smaller than the outer diameter of the substrate W
  • the outer diameter of the upper surface of the annular member 22 is the outer diameter of the substrate W. It is formed so as to be larger than the diameter.
  • the stage structure 2 rises to the processing position (see FIG. 1).
  • the upper surface of the mounting base 21 and the upper surface of the annular member 22 (arc members 22a to 22d) are arranged so as to have the same height.
  • the substrate W mounted on the stage structure 2 is heated to a predetermined film formation temperature by the heater 20 embedded in the mounting base 21.
  • the mounting base 21 can eliminate the need for a through hole through which a support pin for lifting the board W from the mounting base 21 is inserted, the temperature of the board W mounted on the stage structure 2 can be adjusted. In-plane uniformity can be improved.
  • the annular member 22 (a plurality of arc members) is equally divided. As a result, it is possible to reduce the deviation of the contact position in the circumferential direction of the substrate W and improve the in-plane uniformity of temperature. Further, it is preferable to narrow the space between the adjacent arc members 22a to 22d. Thereby, the non-uniformity of the temperature of the substrate W can be reduced.
  • control unit 9 controls the elevating mechanisms 24 and 28 to move the mounting base 21 to the transport position (see FIG. 2), and moves the annular member 22 (arc members 22a to 22d) to the transport position (FIG. 2). It is moved to the height position indicated by the arc member 22a of 2. Further, the control unit 9 opens the gate valve 12. When the gate valve 12 is opened, the transport mechanism 200 holding the substrate W enters the lower space 10 from the carry-in outlet 11, and the substrate W is arranged above the stage structure 2.
  • the control unit 9 controls the elevating mechanism 28 to raise the arc members 22b and 22d to the support positions.
  • the substrate W held by the transport mechanism 200 is lifted by the arc members 22b and 22d and supported by the outer edge portion of the substrate W.
  • the arc members 22b and 22d to be raised are arranged on the opposite side of the center of the mounting base 21 (the center of gravity of the board W to be mounted) when the stage structure 2 is viewed in a plan view. Can be supported without falling.
  • the arc member 22a is kept in a state of being lowered from the arc members 22b and 22d to prevent the arc member 22a and the transport mechanism 200 from coming into contact with each other.
  • the arc member 22c may also be moved to the support position, and the outer edge portion of the substrate W may be supported by the arc members 22b, 22c, 22d.
  • the transport mechanism 200 retracts from the carry-in outlet 11. At this time, by keeping the arc member 22a in a state of being lowered from the arc members 22b and 22d, the transport mechanism 200 can be retracted from the carry-in outlet 11 without contacting the arc member 22a. Further, when the transport mechanism 200 retracts from the carry-in outlet 11, the control unit 9 closes the gate valve 12.
  • the control unit 9 controls the elevating mechanisms 24 and 28 to raise the mounting base 21, the arc members 22a and 22c, so that the substrate W can be mounted on the upper surface of the stage structure 2.
  • the substrate W may be placed on the upper surface of the stage structure 2 by lowering the arc members 22b and 22d.
  • the substrate W can be delivered from the transport mechanism 200 to the stage structure 2.
  • the control unit 9 controls the elevating mechanisms 24 and 28 to lower the stage structure 2 on which the substrate W is placed to the support position. Then, the control unit 9 controls the elevating mechanisms 24 and 28 to further lower the mounting base 21 and the arc members 22a and 22c to the transport position.
  • the arc members 22b and 22d are stationary at the supporting positions, and the substrate W is supported by the arc members 22b and 22d. After lowering the stage structure 2 to the transport position, the arc members 22b and 22d may be raised to the support position. The substrate W may be supported by the arc members 22b, 22c, 22d.
  • the control unit 9 opens the gate valve 12.
  • the transport mechanism 200 enters the lower space 10 from the carry-in outlet 11, and the transport mechanism 200 is arranged between the back surface of the substrate W and the upper side of the mounting base 21.
  • the transport mechanism 200 is placed on the back surface of the substrate W and the mounting base 21 without contacting the annular member 22. It can be placed between the upper part.
  • control unit 9 controls the elevating mechanism 28 to lower the arc members 22b and 22d to the transport position.
  • the substrate W supported by the arc members 22b and 22d is delivered to the transport mechanism 200.
  • the transport mechanism 200 retracts from the carry-in outlet 11. Further, when the transport mechanism 200 retracts from the carry-in outlet 11, the control unit 9 closes the gate valve 12.
  • the substrate W can be delivered from the stage structure 2 to the transfer mechanism 200.
  • the arc members 22a to 22d constituting the annular member 22 have been described as being provided with an elevating shaft 27 and an elevating mechanism 28, respectively, and can be independently elevated, but the present invention is not limited thereto.
  • the arc members 22b and 22d may be configured to be able to move up and down by one lifting mechanism 28. That is, the arc members 22b and 22d may be configured to move up and down in conjunction with each other. Further, the arc members 22b, 22c, 22d may be configured to be able to move up and down by one lifting mechanism 28. That is, the arc members 22b, 22c, 22d may be configured to move up and down in conjunction with each other.
  • the number of elevating mechanisms 28 can be reduced, the cost can be reduced, the number of openings 14 of the processing container 1 can be reduced, and the airtightness can be improved.
  • the arc member 22a may be configured to move up and down by the elevating mechanism 24 integrally with the mounting base 21. Further, the arc members 22a and 22c may be configured to move up and down by the elevating mechanism 24 integrally with the mounting base 21. As a result, the elevating mechanism 28 can be reduced, the cost can be reduced, the number of openings 14 of the processing container 1 can be reduced, and the airtightness can be improved.
  • the elevating mechanism 24 raises and lowers the mounting base 21 between the processing position and the conveying position
  • the elevating mechanism 28 raises and lowers the arc members 22a to 22d (annular member 22) at the processing position, the supporting position, and the conveying position.
  • the first elevating mechanism raises and lowers the mounting base 21 and the arc members 22a to 22d (annular members 22) integrally between the processing position and the conveying position
  • the second elevating mechanism is in the conveying position.
  • the arc members 22a to 22d (annular members 22) may be individually raised and lowered between the support position and the transport position.
  • the raising and lowering mechanism 24 can be omitted.
  • FIG. 4 is an example of a plan view of the stage structure 2 included in the substrate processing apparatus 100 according to the second embodiment.
  • the carry-in outlet 11 (see FIGS. 1 and 2) is assumed to be on the left side of the paper.
  • the annular member 22 may be divided into three arc members 22e to 22g in the circumferential direction.
  • FIG. 5 is an example of a plan view of the stage structure 2 included in the substrate processing apparatus 100 according to the third embodiment. As shown in FIG. 5, the annular member 22 may be divided into two arc members 22h and 22i in the circumferential direction.
  • the substrate processing device 100 is an ALD device for forming a TiN film has been described as an example, but the present invention is not limited to this, and the substrate processing device 100 is not limited to this, but is limited to a thermal ALD device, a plasma ALD device, a thermal CVD (Chemical Vapor Deposition) device, and a plasma. It may be a CVD device or the like. Further, the substrate processing apparatus 100 is not limited to the film forming apparatus, and may be an etching apparatus.
  • Processing container 2 Stage structure 20 Heater 21 Mounting table base 22 Circular member 22a to 22i Arc member 23 Elevating shaft 24 Elevating mechanism 25 Elevating plate 27 Elevating shaft 28 Elevating mechanism 3 Top plate part 4 Exhaust duct 5 First vacuum exhaust part 6 Second vacuum exhaust unit 7 Processing gas supply unit 9 Control unit 100 Board processing device 200 Conveyance mechanism W board

Abstract

Provided are a stage structure, a substrate processing device, and a method for controlling the stage structure, such that in-plane temperature uniformity of a substrate can be improved.　The stage structure is equipped with: a disc-shaped mount base; an annular member disposed on the outer periphery side of the mount base and circumferentially divided at least into two sections; and a lifting unit for raising and lowering at least one of circular arc members formed when the annular member is divided.

Description

ステージ構造体、基板処理装置及びステージ構造体の制御方法Control method of stage structure, substrate processing device and stage structure
　本開示は、ステージ構造体、基板処理装置及びステージ構造体の制御方法に関する。 The present disclosure relates to a stage structure, a substrate processing apparatus, and a control method for the stage structure.
　特許文献１には、基板を加熱するためのヒータが埋没された載置台を備える成膜装置が開示されている。載置台には、載置台を厚さ方向に貫通する貫通孔が設けられている。貫通孔には、昇降自在の支持ピンが設けられている。支持ピンは基板を持ち上げて支持する。 Patent Document 1 discloses a film forming apparatus including a mounting table in which a heater for heating a substrate is embedded. The mounting table is provided with a through hole that penetrates the mounting table in the thickness direction. The through hole is provided with a support pin that can be raised and lowered. The support pins lift and support the board.
特開２０１５－２２９７７６号公報JP-A-2015-229767
　一の側面では、本開示は、基板温度の面内均一性を向上するステージ構造体、基板処理装置及びステージ構造体の制御方法を提供する。 On the one hand, the present disclosure provides a stage structure, a substrate processing apparatus, and a method for controlling the stage structure for improving the in-plane uniformity of the substrate temperature.
　上記課題を解決するために、一の態様によれば、円板形状の載置台ベースと、前記載置台ベースの外周側に配置され、周方向に対して少なくとも２以上に分割される環状部材と、前記環状部材が分割されて形成される円弧部材の少なくとも１つを昇降させる昇降部と、を備える、ステージ構造体が提供される。 In order to solve the above problems, according to one aspect, a disk-shaped mounting base and an annular member arranged on the outer peripheral side of the above-mentioned mounting base and divided into at least two or more in the circumferential direction. Provided is a stage structure including an elevating portion for raising and lowering at least one of arc members formed by dividing the annular member.
　一の側面によれば、基板温度の面内均一性を向上するステージ構造体、基板処理装置及びステージ構造体の制御方法を提供することができる。 According to one aspect, it is possible to provide a stage structure, a substrate processing apparatus, and a control method of the stage structure for improving the in-plane uniformity of the substrate temperature.
第１実施形態に係る基板処理装置の縦断面図の一例であり、成膜処理時の状態を示す。It is an example of the vertical cross-sectional view of the substrate processing apparatus which concerns on 1st Embodiment, and shows the state at the time of film formation processing. 第１実施形態に係る基板処理装置の縦断面図の一例であり、基板の受け渡し時の状態を示す。It is an example of the vertical sectional view of the substrate processing apparatus which concerns on 1st Embodiment, and shows the state at the time of delivery of a substrate. 第１実施形態に係る基板処理装置が備えるステージ構造体の平面図の一例。An example of a plan view of a stage structure included in the substrate processing apparatus according to the first embodiment. ステージ構造体のＢ－Ｂ断面図の一例。An example of a BB sectional view of a stage structure. ステージ構造体のＣ－Ｃ断面図の一例。An example of a CC cross-sectional view of a stage structure. 第２実施形態に係る基板処理装置が備えるステージ構造体の平面図の一例。An example of a plan view of a stage structure included in the substrate processing apparatus according to the second embodiment. 第３実施形態に係る基板処理装置が備えるステージ構造体の平面図の一例。An example of a plan view of a stage structure included in the substrate processing apparatus according to the third embodiment.
　以下、図面を参照して本開示を実施するための形態について説明する。各図面において、同一構成部分には同一符号を付し、重複した説明を省略する場合がある。 Hereinafter, a mode for carrying out the present disclosure will be described with reference to the drawings. In each drawing, the same components may be designated by the same reference numerals and duplicate description may be omitted.
　第１実施形態に係る基板処理装置１００の構成の一例について、図１及び図２を用いて説明する。図１及び図２は、第１実施形態に係る基板処理装置１００の縦断面図の一例である。また、図１は、成膜処理時の状態を示す。図２は、基板Ｗの受け渡し時の状態を示す。 An example of the configuration of the substrate processing apparatus 100 according to the first embodiment will be described with reference to FIGS. 1 and 2. 1 and 2 are examples of vertical cross-sectional views of the substrate processing apparatus 100 according to the first embodiment. Further, FIG. 1 shows a state at the time of the film forming process. FIG. 2 shows a state at the time of delivery of the substrate W.
　図１及び図２に示す基板処理装置１００は、基板Ｗに対して、原料ガスとしてのＴｉＣｌ４ガス及び還元ガスとしてのＮＨ３ガスを供給して、基板Ｗの表面にＴｉＮ膜を成膜するＡＬＤ（Atomic Layer Deposition）装置である。 The substrate processing apparatus 100 shown in FIGS. 1 and 2 supplies TiCl 4 gas as a raw material gas and NH 3 gas as a reducing gas to the substrate W to form a TiN film on the surface of the substrate W. It is an ALD (Atomic Layer Deposition) device.
　基板処理装置１００は、処理容器１と、ステージ構造体２と、天板部３と、排気ダクト４と、第１の真空排気部５と、第２の真空排気部６と、処理ガス供給部７と、制御部９と、を備える。 The substrate processing apparatus 100 includes a processing container 1, a stage structure 2, a top plate portion 3, an exhaust duct 4, a first vacuum exhaust portion 5, a second vacuum exhaust portion 6, and a processing gas supply unit. 7 and a control unit 9 are provided.
　処理容器１は、例えばアルミニウム等の金属により構成され、略有底円筒状に形成される。処理容器１の側壁には、基板Ｗの受け渡しを行うための搬入出口１１が形成される。搬入出口１１には、搬入出口１１を開閉するゲートバルブ１２が設けられている。 The processing container 1 is made of a metal such as aluminum and is formed in a substantially bottomed cylindrical shape. On the side wall of the processing container 1, a carry-in / outlet 11 for delivering the substrate W is formed. The carry-in outlet 11 is provided with a gate valve 12 that opens and closes the carry-in outlet 11.
　処理容器１の側壁の上には、排気ダクト４が設けられている。排気ダクト４は、例えばアルミニウム等の金属により構成され、縦断面が矩形状をなす円環状に形成される。排気ダクト４の内周面側には、周方向に沿って処理容器１内に向けて開口する開口部４７が形成される。後述する処理空間３０から流れ出たガスは、開口部４７を介して、排気ダクト４内に排気される。 An exhaust duct 4 is provided on the side wall of the processing container 1. The exhaust duct 4 is made of a metal such as aluminum, and is formed in an annular shape having a rectangular vertical cross section. An opening 47 is formed on the inner peripheral surface side of the exhaust duct 4 so as to open toward the inside of the processing container 1 along the circumferential direction. The gas flowing out of the processing space 30 described later is exhausted into the exhaust duct 4 through the opening 47.
　排気ダクト４の外壁面には、第１の排気口４１が形成される。第１の排気口４１には、排気管４２が接続される。排気管４２は、第１の排気口４１側から圧力調整部４３、第１の排気バルブ４４が介設され、真空排気ポンプ４０に接続される。この第１の排気口４１、排気管４２、圧力調整部４３、第１の排気バルブ４４及び真空排気ポンプ４０は、第１の真空排気部５に相当する。 A first exhaust port 41 is formed on the outer wall surface of the exhaust duct 4. An exhaust pipe 42 is connected to the first exhaust port 41. The exhaust pipe 42 is connected to the vacuum exhaust pump 40 by interposing a pressure adjusting unit 43 and a first exhaust valve 44 from the first exhaust port 41 side. The first exhaust port 41, the exhaust pipe 42, the pressure adjusting unit 43, the first exhaust valve 44, and the vacuum exhaust pump 40 correspond to the first vacuum exhaust unit 5.
　処理容器１の底面には、第２の排気口１５が形成される。第２の排気口１５には、排気管１６が接続される。排気管１６は、第２の排気口１５側から圧力調整部１７、第２の排気バルブ１８が介設され、真空排気ポンプ４０に接続される。この第２の排気口１５、排気管１６、圧力調整部１７、第２の排気バルブ１８及び真空排気ポンプ４０は、第２の真空排気部６に相当する。なお、第１の真空排気部５及び第２の真空排気部６は真空排気ポンプ４０を共用するものとしたが、真空排気ポンプ４０が個別に設けられていてもよい。 A second exhaust port 15 is formed on the bottom surface of the processing container 1. An exhaust pipe 16 is connected to the second exhaust port 15. The exhaust pipe 16 is connected to the vacuum exhaust pump 40 by interposing a pressure adjusting unit 17 and a second exhaust valve 18 from the second exhaust port 15 side. The second exhaust port 15, the exhaust pipe 16, the pressure adjusting unit 17, the second exhaust valve 18, and the vacuum exhaust pump 40 correspond to the second vacuum exhaust unit 6. Although the first vacuum exhaust unit 5 and the second vacuum exhaust unit 6 share the vacuum exhaust pump 40, the vacuum exhaust pump 40 may be provided individually.
　処理容器１内には、基板Ｗを載置するためのステージ構造体２が設けられている。ステージ構造体２は、ヒータ２０が埋没された載置台ベース２１と、分割された環状部材２２と、を有する。また、ステージ構造体２は、載置台ベース２１に対して、分割された環状部材２２のうち少なくとも１つのパーツ（円弧部材２２ｂ，２２ｄ）を昇降させる昇降部（昇降機構２４，２８）を有する。 A stage structure 2 for mounting the substrate W is provided in the processing container 1. The stage structure 2 has a mounting base 21 in which the heater 20 is embedded and a divided annular member 22. Further, the stage structure 2 has an elevating portion (elevating mechanism 24, 28) for elevating and lowering at least one part ( arc members 22b, 22d) of the divided annular members 22 with respect to the mounting base 21.
　載置台ベース２１は、例えば窒化アルミニウム等のセラミックス材料やアルミニウム等の金属により構成され、円板状に形成される。載置台ベース２１の内部には、基板Ｗを成膜温度（例えば、５０℃～７００℃）に加熱するためのヒータ２０が埋設されている。ヒータ２０は、ヒータ電源（図示せず）から給電されて発熱する。ヒータ２０によって載置台ベース２１を加熱することにより、載置台ベース２１（ステージ構造体２）に載置された基板Ｗを加熱することができる。 The mounting base 21 is made of a ceramic material such as aluminum nitride or a metal such as aluminum, and is formed in a disk shape. Inside the mounting base 21, a heater 20 for heating the substrate W to a film forming temperature (for example, 50 ° C. to 700 ° C.) is embedded. The heater 20 is supplied with power from a heater power source (not shown) to generate heat. By heating the mounting base 21 with the heater 20, the substrate W mounted on the mounting base 21 (stage structure 2) can be heated.
　環状部材２２は、例えばアルミナ、石英等のセラミックス材料により構成され、上下端が開口する扁平の円筒形状に形成される。環状部材２２の上端側は、載置台ベース２１の側周面を側方から囲むように環状に形成される。環状部材２２の内周面と載置台ベース２１の側周面との間には、載置台ベース２１に対して環状部材２２が昇降可能となるように、僅かに隙間（例えば、０．１ｍｍ）を有している。環状部材２２の下端側は、外径が環状部材２２の上端側の外径と等しく、内径が環状部材２２の上端側の内径よりも大きくなるように、筒状に形成される。これにより、環状部材２２の外周面と、後述する区画部材４５の筒状部４６の内周面とが向かい合う軸方向の長さを長くして、載置台ベース２１の裏面側に処理ガスが流れ込むことを抑制する。また、環状部材２２は、図３Ａを用いて後述するように、周方向に対して４つの円弧部材２２ａ～２２ｄに等分割されている。 The annular member 22 is made of a ceramic material such as alumina or quartz, and is formed in a flat cylindrical shape with upper and lower ends open. The upper end side of the annular member 22 is formed in an annular shape so as to surround the side peripheral surface of the mounting base 21 from the side. There is a slight gap (for example, 0.1 mm) between the inner peripheral surface of the annular member 22 and the side peripheral surface of the mounting base 21 so that the annular member 22 can move up and down with respect to the mounting base 21. have. The lower end side of the annular member 22 is formed in a tubular shape so that the outer diameter is equal to the outer diameter on the upper end side of the annular member 22 and the inner diameter is larger than the inner diameter on the upper end side of the annular member 22. As a result, the length in the axial direction in which the outer peripheral surface of the annular member 22 and the inner peripheral surface of the tubular portion 46 of the partition member 45, which will be described later, face each other is lengthened, and the processing gas flows into the back surface side of the mounting base 21. Suppress that. Further, the annular member 22 is equally divided into four arc members 22a to 22d in the circumferential direction, as will be described later with reference to FIG. 3A.
　載置台ベース２１の下面側中央部には、上下方向に伸びる昇降軸２３が設けられている。昇降軸２３は、処理容器１の底面に形成された開口部１３を貫通して下方に延び、その下端が昇降機構２４に接続される。載置台ベース２１は、昇降軸２３及び昇降機構２４により、基板Ｗに処理ガスを供給して成膜処理を行う際の位置である処理位置（図１参照）と、外部の搬送機構２００との間で基板Ｗの受け渡しを行う際の位置である搬送位置（図２参照）との間で昇降可能となっている。また、昇降軸２３の処理容器１の下方には、昇降板２５が取り付けられており、処理容器１の底面と昇降板２５との間には、処理容器１内の雰囲気を外気と区画し、載置台ベース２１の昇降動作にともなって伸縮するベローズ２６が設けられている。 A lifting shaft 23 extending in the vertical direction is provided at the center of the lower surface side of the mounting base 21. The elevating shaft 23 penetrates the opening 13 formed in the bottom surface of the processing container 1 and extends downward, and the lower end thereof is connected to the elevating mechanism 24. The mounting base 21 has a processing position (see FIG. 1), which is a position when processing gas is supplied to the substrate W by the elevating shaft 23 and the elevating mechanism 24 to perform a film forming process, and an external transport mechanism 200. It is possible to move up and down between the substrate W and the transport position (see FIG. 2), which is the position at which the substrate W is delivered. Further, an elevating plate 25 is attached below the processing container 1 of the elevating shaft 23, and the atmosphere inside the processing container 1 is partitioned from the outside air between the bottom surface of the processing container 1 and the elevating plate 25. A bellows 26 that expands and contracts as the mounting base 21 moves up and down is provided.
　環状部材２２（円弧部材２２ａ～２２ｄ）の下面側には、上下方向に伸びる昇降軸２７が設けられている。昇降軸２７は、処理容器１の底面に形成された開口部１４を貫通して下方に延び、その下端が昇降機構２８に接続される。なお、昇降軸２７及び昇降機構２８は４つの円弧部材２２ａ～２２ｄに対してそれぞれ個別に設けられており、円弧部材２２ａ～２２ｄは独立して昇降可能となっている。円弧部材２２ａ～２２ｄは、昇降軸２７及び昇降機構２８により、基板Ｗに処理ガスを供給して成膜処理を行う際の位置である処理位置（図１参照）と、外部の搬送機構２００との間で基板Ｗの受け渡しを行う際に搬送機構２００を挿入するための開口を形成する位置である搬送位置（図２の円弧部材２２ａで示す位置参照）と、外部の搬送機構２００との間で基板Ｗの受け渡しを行う際に基板Ｗを支持するための位置である支持位置（図２の円弧部材２２ｃで示す位置参照）との間で昇降可能となっている。また、処理容器１の底面と昇降機構２８との間には、処理容器１内の雰囲気を外気と区画し、円弧部材２２ａ～２２ｄの昇降動作にともなって伸縮するベローズ２９が設けられている。 An elevating shaft 27 extending in the vertical direction is provided on the lower surface side of the annular member 22 (arc members 22a to 22d). The elevating shaft 27 penetrates the opening 14 formed in the bottom surface of the processing container 1 and extends downward, and the lower end thereof is connected to the elevating mechanism 28. The elevating shaft 27 and the elevating mechanism 28 are individually provided for each of the four arc members 22a to 22d, and the arc members 22a to 22d can be independently moved up and down. The arc members 22a to 22d have a processing position (see FIG. 1), which is a position when the processing gas is supplied to the substrate W by the elevating shaft 27 and the elevating mechanism 28 to perform the film forming process, and the external transport mechanism 200. Between the transfer position (see the position indicated by the arc member 22a in FIG. 2), which is a position for forming an opening for inserting the transfer mechanism 200 when the substrate W is transferred between the two, and the external transfer mechanism 200. It is possible to move up and down between the support position (see the position indicated by the arc member 22c in FIG. 2), which is a position for supporting the substrate W when the substrate W is delivered. Further, a bellows 29 is provided between the bottom surface of the processing container 1 and the elevating mechanism 28 to partition the atmosphere inside the processing container 1 from the outside air and expand and contract as the arc members 22a to 22d move up and down.
　処理容器１の側壁の上に設けられた排気ダクト４の上には、開口を塞ぐように天板部３が設けられている。天板部３の下面（ステージ構造体２と向き合う面）の中央部には、互いに横方向に隣接して並ぶガス供給口３３，３４が開口する。天板部３の下面は、ガス供給口３３，３４から外周側に向かって低くなるように傾斜面として形成される。この傾斜面の更に外側には、平坦な平坦部３６が全周に亘って形成される。平坦部３６は、ステージ構造体２を処理位置まで上昇させたときにステージ構造体２の環状部材２２の上面との間に隙間を介して対向するように配置される。天板部３の下面とステージ構造体２の上面とによって囲まれた概ね扁平な円錐状の空間は、基板Ｗに対して成膜が行われる処理空間３０となる。 A top plate portion 3 is provided on the exhaust duct 4 provided on the side wall of the processing container 1 so as to close the opening. Gas supply ports 33 and 34, which are arranged side by side in the lateral direction, are opened in the central portion of the lower surface of the top plate portion 3 (the surface facing the stage structure 2). The lower surface of the top plate portion 3 is formed as an inclined surface so as to be lowered from the gas supply ports 33 and 34 toward the outer peripheral side. A flat flat portion 36 is formed on the outer side of the inclined surface over the entire circumference. The flat portion 36 is arranged so as to face the upper surface of the annular member 22 of the stage structure 2 with a gap when the stage structure 2 is raised to the processing position. The substantially flat conical space surrounded by the lower surface of the top plate portion 3 and the upper surface of the stage structure 2 is a processing space 30 in which film formation is performed on the substrate W.
　区画部材４５は、例えばアルミニウム等の金属により構成され、リング状の部材であって、処理位置における環状部材２２の外周面を側方から囲むように形成された筒状部４６を有する。筒状部４６の内周面と環状部材２２の外周面との間には、ステージ構造体２が昇降可能となるように僅かに隙間（例えば、０．１ｍｍ）を有している。ステージ構造体２が処理位置に上昇した際、区画部材４５によって、処理容器１の内部は、上側の処理空間３０を含む空間と、下側の下部空間１０と、に区画される。これにより、成膜処理を行う際には、処理空間３０内の雰囲気は、平坦部３６と環状部材２２の上面との隙間から排気され、区画部材４５の上面側を流れて、排気ダクト４から排気される。 The partition member 45 is a ring-shaped member made of a metal such as aluminum, and has a tubular portion 46 formed so as to surround the outer peripheral surface of the annular member 22 at the processing position from the side. A slight gap (for example, 0.1 mm) is provided between the inner peripheral surface of the tubular portion 46 and the outer peripheral surface of the annular member 22 so that the stage structure 2 can be raised and lowered. When the stage structure 2 rises to the processing position, the partition member 45 divides the inside of the processing container 1 into a space including the upper processing space 30 and a lower lower space 10. As a result, when the film forming process is performed, the atmosphere in the processing space 30 is exhausted from the gap between the flat portion 36 and the upper surface of the annular member 22, flows on the upper surface side of the partition member 45, and is exhausted from the exhaust duct 4. It is exhausted.
　ガス供給口３３は、処理空間３０内に還元ガスとしてのＮＨ３ガス、または、不活性ガスとしてのＮ２ガスを供給するためのガス供給路３１の下流端に形成される。ガス供給口３４は、処理空間３０内に原料ガスとしてのＴｉＣｌ４ガス、または、不活性ガスとしてのＮ２ガスを供給するためのガス供給路３２の下流端に形成される。ガス供給路３１，３２は、天板部３の中央部を上下方向に貫通している。これらガス供給口３３，３４の下方側には、ガス供給路３１，３２から供給された処理ガスを衝突させて、処理空間３０内に分散させるための分散板３５が例えば水平に設けられている。 The gas supply port 33 is formed at the downstream end of the gas supply path 31 for supplying NH 3 gas as a reducing gas or N 2 gas as an inert gas into the processing space 30. The gas supply port 34 is formed at the downstream end of the gas supply path 32 for supplying the TiCl 4 gas as a raw material gas or the N 2 gas as an inert gas into the processing space 30. The gas supply paths 31 and 32 penetrate the central portion of the top plate portion 3 in the vertical direction. On the lower side of these gas supply ports 33 and 34, for example, a dispersion plate 35 for colliding the processing gas supplied from the gas supply passages 31 and 32 and dispersing the processing gas in the processing space 30 is provided horizontally. ..
　一方のガス供給路３１の上流側には、ＮＨ３ガス供給管５１を介してＮＨ３ガス供給源５２が接続されると共に、ＮＨ３ガス供給管５１の途中から分岐したＮ２ガス供給管５５を介してＮ２ガス供給源５０が接続される。他方のガス供給路３２の上流側には、ＴｉＣｌ４供給管６１を介して、ＴｉＣｌ４ガス供給源６２が接続されると共に、ＴｉＣｌ４供給管６１の途中から分岐したＮ２ガス供給管６５を介してＮ２ガス供給源５０が接続されている。ＮＨ３ガス供給管５１は、分岐点側から流量調整部５３、バルブ５４が介設され、ＮＨ３ガス供給源５２に接続される。Ｎ２ガス供給管５５は、分岐点側から流量調整部５６、バルブ５７が介設され、Ｎ２ガス供給源５０に接続される。ＴｉＣｌ４供給管６１は、分岐点側から流量調整部６３、バルブ６４が介設され、ＴｉＣｌ４ガス供給源６２に接続される。Ｎ２ガス供給管６５は、分岐点側から流量調整部６６、バルブ６７が介設され、Ｎ２ガス供給源５０に接続される。これらガス供給源５０，５２，６２、供給管５１，５５，６１，６５、流量調整部５３，５６，６３，６６、バルブ５４，５７，６４，６７は、処理ガス供給部７に相当する。 The upstream side of one of the gas supply passage 31, NH 3 with an NH 3 gas supply source 52 through the gas supply pipe 51 is connected, N 2 gas feed pipe 55 branched from the middle of the NH 3 gas supply pipe 51 N 2 gas supply source 50 is connected through a. On the other upstream side of the gas supply passage 32, through the TiCl 4 feed pipe 61, together with the TiCl 4 gas supply source 62 is connected, the N 2 gas supply pipe 65 branched from the middle of the TiCl 4 feed pipe 61 is N 2 gas supply source 50 via are connected. The NH 3 gas supply pipe 51 is connected to the NH 3 gas supply source 52 by interposing a flow rate adjusting unit 53 and a valve 54 from the branch point side. The N 2 gas supply pipe 55 is connected to the N 2 gas supply source 50 by interposing a flow rate adjusting unit 56 and a valve 57 from the branch point side. The TiCl 4 supply pipe 61 is connected to the TiCl 4 gas supply source 62 by interposing a flow rate adjusting unit 63 and a valve 64 from the branch point side. The N 2 gas supply pipe 65 is connected to the N 2 gas supply source 50 by interposing a flow rate adjusting unit 66 and a valve 67 from the branch point side. These gas supply sources 50, 52, 62, supply pipes 51, 55, 61, 65, flow rate adjusting units 53, 56, 63, 66, and valves 54, 57, 64, 67 correspond to the processing gas supply unit 7.
　また、処理容器１の側壁内や天板部３の内部には、図示しないヒータなどの昇温機構が設けられており、天板部３及び処理容器１の内面の温度が所定の温度（例えば、１５０℃）に設定されている。これにより、例えば処理容器１の内部において、処理ガスの反応による例えば塩化アンモニウムなどのパーティクル源となる副生成物の析出を抑制する。 Further, a temperature raising mechanism such as a heater (not shown) is provided inside the side wall of the processing container 1 or inside the top plate portion 3, and the temperature of the inner surface of the top plate portion 3 and the processing container 1 is a predetermined temperature (for example). , 150 ° C.). This suppresses the precipitation of by-products that serve as a particle source, such as ammonium chloride, due to the reaction of the processing gas, for example, inside the processing container 1.
　制御部９は、基板処理装置１００の各部の動作を制御する。制御部９は、ＣＰＵ（Central Processing Unit）、ＲＯＭ（Read Only Memory）及びＲＡＭ（Random Access Memory）を有する。ＣＰＵは、ＲＡＭ等の記憶領域に格納されたレシピに従って、所望の処理を実行する。レシピには、プロセス条件に対する装置の制御情報が設定されている。制御情報は、例えばガス流量、圧力、温度、プロセス時間であってよい。なお、レシピ及び制御部９が使用するプログラムは、例えばハードディスク、半導体メモリに記憶されてもよい。また、レシピ等は、ＣＤ－ＲＯＭ、ＤＶＤ等の可搬性のコンピュータにより読み取り可能な記憶媒体に収容された状態で所定の位置にセットされ、読み出されるようにしてもよい。 The control unit 9 controls the operation of each unit of the substrate processing device 100. The control unit 9 has a CPU (Central Processing Unit), a ROM (Read Only Memory), and a RAM (Random Access Memory). The CPU executes a desired process according to a recipe stored in a storage area such as RAM. In the recipe, control information of the device for the process condition is set. The control information may be, for example, gas flow rate, pressure, temperature, process time. The recipe and the program used by the control unit 9 may be stored in, for example, a hard disk or a semiconductor memory. Further, the recipe or the like may be set in a predetermined position and read in a state of being housed in a storage medium readable by a portable computer such as a CD-ROM or a DVD.
　基板処理装置１００における成膜処理について、ＡＬＤプロセスにより、基板Ｗの上にＴｉＮ膜を形成する場合を例に挙げて説明する。 The film forming process in the substrate processing apparatus 100 will be described by taking as an example a case where a TiN film is formed on the substrate W by the ALD process.
　まず、基板処理装置１００の処理容器１内に基板Ｗを搬入して、基板Ｗをステージ構造体２に載置する。なお、基板Ｗを搬送機構２００からステージ構造体２に受け渡すためのステージ構造体２の構造及び動作については、図３Ａから図３Ｃを用いて後述する。基板Ｗが載置されたステージ構造体２を処理位置（図１参照）まで上昇させる。ステージ構造体２に載置された基板Ｗは、載置台ベース２１に埋没されたヒータ２０により所定の成膜温度に加熱される。 First, the substrate W is carried into the processing container 1 of the substrate processing apparatus 100, and the substrate W is placed on the stage structure 2. The structure and operation of the stage structure 2 for delivering the substrate W from the transport mechanism 200 to the stage structure 2 will be described later with reference to FIGS. 3A to 3C. The stage structure 2 on which the substrate W is placed is raised to the processing position (see FIG. 1). The substrate W mounted on the stage structure 2 is heated to a predetermined film formation temperature by the heater 20 embedded in the mounting base 21.
　続いて、ＴｉＣｌ４ガスとＮＨ３ガスとを用いたＡＬＤプロセスによりＴｉＮ膜を成膜する。ＡＬＤプロセスは、ＴｉＣｌ４供給工程、第１のパージ工程、ＮＨ３供給工程、及び第２のパージ工程を所定サイクル繰り返し、基板Ｗの上に所望の膜厚のＴｉＮ膜を形成するプロセスである。 Subsequently, a TiN film is formed by an ALD process using TiCl 4 gas and NH 3 gas. The ALD process is a process in which a TiCl 4 supply step, a first purge step, an NH 3 supply step, and a second purge step are repeated for a predetermined cycle to form a TiN film having a desired thickness on the substrate W.
　ＴｉＣｌ４供給工程は、ＴｉＣｌ４ガスを処理空間３０に供給する工程である。これにより、基板Ｗの表面にＴｉＣｌ４ガスが吸着される。第１のパージ工程は、Ｎ２ガスを処理空間３０に供給する工程である。これにより、処理空間３０の余剰のＴｉＣｌ４ガス等をパージする。ＮＨ３供給工程は、ＮＨ３ガスを処理空間３０に供給する工程である。これにより、基板Ｗ上に吸着したＴｉＣｌ４が還元される。第２のパージ工程は、Ｎ２ガスを処理空間３０に供給する工程である。これにより、処理空間３０の余剰のＮＨ３ガス等をパージする。以下、これらの工程を所定サイクル繰り返すことにより、基板Ｗの上に所望の膜厚のＴｉＮ膜を形成する。 The TiCl 4 supply step is a step of supplying the TiCl 4 gas to the treatment space 30. As a result, TiCl 4 gas is adsorbed on the surface of the substrate W. First purge step is a step of supplying N 2 gas to the processing space 30. As a result, excess TiCl 4 gas or the like in the processing space 30 is purged. The NH 3 supply step is a step of supplying NH 3 gas to the processing space 30. As a result, the TiCl 4 adsorbed on the substrate W is reduced. The second purging step is a step of supplying N 2 gas to the processing space 30. As a result, excess NH 3 gas or the like in the processing space 30 is purged. Hereinafter, by repeating these steps in a predetermined cycle, a TiN film having a desired film thickness is formed on the substrate W.
　成膜処理が終了すると、基板Ｗが載置されたステージ構造体２を搬送位置（図２参照）まで下降させる。そして、処理容器１内から基板Ｗが搬出される。なお、基板Ｗをステージ構造体２から搬送機構２００に受け渡すためのステージ構造体２の構造及び動作については、図３Ａから図３Ｃを用いて後述する。 When the film forming process is completed, the stage structure 2 on which the substrate W is placed is lowered to the transport position (see FIG. 2). Then, the substrate W is carried out from the processing container 1. The structure and operation of the stage structure 2 for delivering the substrate W from the stage structure 2 to the transfer mechanism 200 will be described later with reference to FIGS. 3A to 3C.
＜ステージ構造体２の構成＞
　次に、第１実施形態に係る基板処理装置１００が備えるステージ構造体２の構成について、図３Ａから図３Ｃを用いて更に説明する。図３Ａは、第１実施形態に係る基板処理装置１００が備えるステージ構造体２の平面図の一例である図３Ｂは、ステージ構造体２のＢ－Ｂ断面図の一例である。図３Ｃは、ステージ構造体２のＣ－Ｃ断面図の一例である。 <Structure of stage structure 2>
Next, the configuration of the stage structure 2 included in the substrate processing apparatus 100 according to the first embodiment will be further described with reference to FIGS. 3A to 3C. FIG. 3A is an example of a plan view of the stage structure 2 included in the substrate processing apparatus 100 according to the first embodiment. FIG. 3B is an example of a cross-sectional view taken along the line BB of the stage structure 2. FIG. 3C is an example of a CC sectional view of the stage structure 2.
　なお、図３Ａ及び図３Ｂにおいて、搬入出口１１（図１，２参照）は、紙面の左側にあるものとする。また、図３Ｃにおいて、搬入出口１１は、紙面の奥側にある。また、図３Ａでは、基板Ｗが載置されていない状態におけるステージ構造体２を図示しており、基板Ｗが載置される位置を二点鎖線で図示している。また、図３Ｂ及び図３Ｃは、基板Ｗを載置台ベース２１から持ち上げて、搬送機構２００を基板Ｗの裏面側に挿入した状態を図示している。また、図３Ｂ及び図３Ｃにおいて、環状部材２２を昇降させるための昇降軸２７は省略して図示している。 Note that, in FIGS. 3A and 3B, the carry-in outlet 11 (see FIGS. 1 and 2) is assumed to be on the left side of the paper. Further, in FIG. 3C, the carry-in outlet 11 is on the back side of the paper surface. Further, in FIG. 3A, the stage structure 2 in a state where the substrate W is not mounted is shown, and the position where the substrate W is mounted is shown by a chain double-dashed line. Further, FIGS. 3B and 3C show a state in which the substrate W is lifted from the mounting base 21 and the transport mechanism 200 is inserted into the back surface side of the substrate W. Further, in FIGS. 3B and 3C, the elevating shaft 27 for elevating and lowering the annular member 22 is omitted.
　図３Ａに示すように、円板形状の載置台ベース２１の外周側に、環状部材２２が配置されている。環状部材２２は、周方向に対して４つの円弧部材２２ａ～２２ｄに等分割されている。ここで、搬入出口１１に最も近い円弧部材を円弧部材２２ａとする。また、円弧部材２２ａに隣接する円弧部材をそれぞれ円弧部材２２ｂ，２２ｄとする。搬入出口１１から最も遠い円弧部材を円弧部材２２ｃとする。隣接する円弧部材２２ａ～２２ｄの間には、円弧部材２２ａ～２２ｄが個別に昇降可能となるように僅かに隙間（例えば、０．１ｍｍ）を有している。なお、前述したように、昇降軸２７及び昇降機構２８（図１，２参照）は、４つの円弧部材２２ａ～２２ｄに対してそれぞれ個別に設けられており、円弧部材２２ａ～２２ｄは独立して昇降可能となっている。 As shown in FIG. 3A, the annular member 22 is arranged on the outer peripheral side of the disk-shaped mounting base 21. The annular member 22 is equally divided into four arc members 22a to 22d in the circumferential direction. Here, the arc member closest to the carry-in outlet 11 is referred to as the arc member 22a. Further, the arc members adjacent to the arc members 22a are referred to as arc members 22b and 22d, respectively. The arc member farthest from the carry-in outlet 11 is referred to as an arc member 22c. A slight gap (for example, 0.1 mm) is provided between the adjacent arc members 22a to 22d so that the arc members 22a to 22d can be individually raised and lowered. As described above, the elevating shaft 27 and the elevating mechanism 28 (see FIGS. 1 and 2) are individually provided for each of the four arc members 22a to 22d, and the arc members 22a to 22d are independently provided. It can be raised and lowered.
　ここで、載置台ベース２１の外径は基板Ｗの外径よりも小さく、環状部材２２の上面の内径は基板Ｗの外径よりも小さく、環状部材２２の上面の外径は基板Ｗの外径よりも大きくなるように形成される。 Here, the outer diameter of the mounting base 21 is smaller than the outer diameter of the substrate W, the inner diameter of the upper surface of the annular member 22 is smaller than the outer diameter of the substrate W, and the outer diameter of the upper surface of the annular member 22 is the outer diameter of the substrate W. It is formed so as to be larger than the diameter.
　基板Ｗに処理ガスを供給して成膜処理を行う際、ステージ構造体２は、処理位置（図１参照）まで上昇する。この際、載置台ベース２１の上面と環状部材２２（円弧部材２２ａ～２２ｄ）の上面とは、同じ高さとなるように配置される。これにより、基板Ｗをステージ構造体２に載置した際、基板Ｗの下面の外縁部が環状部材２２の上面に載置され、基板Ｗの下面の内縁部が載置台ベース２１の上面に載置される。また、ステージ構造体２に載置された基板Ｗは、載置台ベース２１に埋没されたヒータ２０により所定の成膜温度に加熱される。ここで、載置台ベース２１は、基板Ｗを載置台ベース２１から持ち上げるための支持ピンを挿通する貫通穴を不要とすることができるので、ステージ構造体２に載置された基板Ｗの温度の面内均一性を向上させることができる。 When the processing gas is supplied to the substrate W to perform the film forming process, the stage structure 2 rises to the processing position (see FIG. 1). At this time, the upper surface of the mounting base 21 and the upper surface of the annular member 22 (arc members 22a to 22d) are arranged so as to have the same height. As a result, when the substrate W is mounted on the stage structure 2, the outer edge portion of the lower surface of the substrate W is mounted on the upper surface of the annular member 22, and the inner edge portion of the lower surface of the substrate W is mounted on the upper surface of the mounting base 21. Placed. Further, the substrate W mounted on the stage structure 2 is heated to a predetermined film formation temperature by the heater 20 embedded in the mounting base 21. Here, since the mounting base 21 can eliminate the need for a through hole through which a support pin for lifting the board W from the mounting base 21 is inserted, the temperature of the board W mounted on the stage structure 2 can be adjusted. In-plane uniformity can be improved.
　また、環状部材２２（複数の円弧部材）は、等分割されていることが好ましい。これにより、基板Ｗの周方向における接触位置の片寄りを低減し、温度の面内均一性を向上させることができる。また、隣接する円弧部材２２ａ～２２ｄの間を狭くすることが好ましい。これにより、基板Ｗの温度の不均一を低減することができる。 Further, it is preferable that the annular member 22 (a plurality of arc members) is equally divided. As a result, it is possible to reduce the deviation of the contact position in the circumferential direction of the substrate W and improve the in-plane uniformity of temperature. Further, it is preferable to narrow the space between the adjacent arc members 22a to 22d. Thereby, the non-uniformity of the temperature of the substrate W can be reduced.
　次に、基板処理装置１００の処理容器１内に基板Ｗを搬入して、基板Ｗをステージ構造体２に載置する際の動作について説明する。 Next, the operation when the substrate W is carried into the processing container 1 of the substrate processing apparatus 100 and the substrate W is placed on the stage structure 2 will be described.
　まず、制御部９は、昇降機構２４，２８を制御して、載置台ベース２１を搬送位置（図２参照）へと移動させるとともに、環状部材２２（円弧部材２２ａ～２２ｄ）を搬送位置（図２の円弧部材２２ａで示す高さ位置）へと移動させる。また、制御部９は、ゲートバルブ１２を開く。ゲートバルブ１２が開放されると、搬入出口１１から下部空間１０内に基板Ｗを保持した搬送機構２００が進入し、ステージ構造体２の上方に基板Ｗが配置される。 First, the control unit 9 controls the elevating mechanisms 24 and 28 to move the mounting base 21 to the transport position (see FIG. 2), and moves the annular member 22 (arc members 22a to 22d) to the transport position (FIG. 2). It is moved to the height position indicated by the arc member 22a of 2. Further, the control unit 9 opens the gate valve 12. When the gate valve 12 is opened, the transport mechanism 200 holding the substrate W enters the lower space 10 from the carry-in outlet 11, and the substrate W is arranged above the stage structure 2.
　次に、図３Ｂ及び図３Ｃに示すように、制御部９は、昇降機構２８を制御して、円弧部材２２ｂ，２２ｄを支持位置へと上昇させる。これにより、搬送機構２００に保持された基板Ｗは、円弧部材２２ｂ，２２ｄによって持ち上げられ、基板Ｗの外縁部で支持される。なお、上昇させる円弧部材２２ｂ，２２ｄは、ステージ構造体２を平面視した際、載置台ベース２１の中心（載置される基板Ｗの重心）に対して反対側に配置されており、基板Ｗが落下することなく支持することができる。また、円弧部材２２ａは、円弧部材２２ｂ，２２ｄよりも下降した状態のままとすることにより、円弧部材２２ａと搬送機構２００とが接触することを防止している。なお、図２に示すように、円弧部材２２ｃも支持位置へと移動させ、円弧部材２２ｂ，２２ｃ，２２ｄによって基板Ｗの外縁部を支持してもよい。 Next, as shown in FIGS. 3B and 3C, the control unit 9 controls the elevating mechanism 28 to raise the arc members 22b and 22d to the support positions. As a result, the substrate W held by the transport mechanism 200 is lifted by the arc members 22b and 22d and supported by the outer edge portion of the substrate W. The arc members 22b and 22d to be raised are arranged on the opposite side of the center of the mounting base 21 (the center of gravity of the board W to be mounted) when the stage structure 2 is viewed in a plan view. Can be supported without falling. Further, the arc member 22a is kept in a state of being lowered from the arc members 22b and 22d to prevent the arc member 22a and the transport mechanism 200 from coming into contact with each other. As shown in FIG. 2, the arc member 22c may also be moved to the support position, and the outer edge portion of the substrate W may be supported by the arc members 22b, 22c, 22d.
　基板Ｗが円弧部材２２ｂ，２２ｄによって支持されると、搬送機構２００は搬入出口１１から退避する。この際、円弧部材２２ａを円弧部材２２ｂ，２２ｄよりも下降した状態のままとすることにより、搬送機構２００は円弧部材２２ａと接触することなく搬入出口１１から退避することができる。また、搬送機構２００が搬入出口１１から退避すると、制御部９は、ゲートバルブ１２を閉じる。 When the substrate W is supported by the arc members 22b and 22d, the transport mechanism 200 retracts from the carry-in outlet 11. At this time, by keeping the arc member 22a in a state of being lowered from the arc members 22b and 22d, the transport mechanism 200 can be retracted from the carry-in outlet 11 without contacting the arc member 22a. Further, when the transport mechanism 200 retracts from the carry-in outlet 11, the control unit 9 closes the gate valve 12.
　制御部９は、昇降機構２４，２８を制御して、載置台ベース２１、円弧部材２２ａ，２２ｃを上昇させることにより、ステージ構造体２の上面に基板Ｗを載置することができる。なお、円弧部材２２ｂ，２２ｄを下降させることにより、ステージ構造体２の上面に基板Ｗを載置してもよい。 The control unit 9 controls the elevating mechanisms 24 and 28 to raise the mounting base 21, the arc members 22a and 22c, so that the substrate W can be mounted on the upper surface of the stage structure 2. The substrate W may be placed on the upper surface of the stage structure 2 by lowering the arc members 22b and 22d.
　以上のように、基板Ｗを搬送機構２００からステージ構造体２に受け渡すことができる。 As described above, the substrate W can be delivered from the transport mechanism 200 to the stage structure 2.
　次に、ステージ構造体２に載置された基板を処理容器１内から搬出する際の動作について説明する。 Next, the operation when the substrate mounted on the stage structure 2 is carried out from the processing container 1 will be described.
　成膜処理が終了すると、制御部９は、昇降機構２４，２８を制御して、基板Ｗが載置されたステージ構造体２を支持位置まで下降させる。そして、制御部９は、昇降機構２４，２８を制御して、載置台ベース２１、円弧部材２２ａ，２２ｃを搬送位置までさらに下降させる。円弧部材２２ｂ，２２ｄは支持位置で静止しており、基板Ｗは円弧部材２２ｂ，２２ｄによって支持される。なお、ステージ構造体２を搬送位置まで下降させた後、円弧部材２２ｂ，２２ｄを支持位置まで上昇させてもよい。なお、円弧部材２２ｂ，２２ｃ，２２ｄによって基板Ｗを支持してもよい。 When the film forming process is completed, the control unit 9 controls the elevating mechanisms 24 and 28 to lower the stage structure 2 on which the substrate W is placed to the support position. Then, the control unit 9 controls the elevating mechanisms 24 and 28 to further lower the mounting base 21 and the arc members 22a and 22c to the transport position. The arc members 22b and 22d are stationary at the supporting positions, and the substrate W is supported by the arc members 22b and 22d. After lowering the stage structure 2 to the transport position, the arc members 22b and 22d may be raised to the support position. The substrate W may be supported by the arc members 22b, 22c, 22d.
　制御部９は、ゲートバルブ１２を開く。ゲートバルブ１２が開放されると、搬入出口１１から下部空間１０内に搬送機構２００が進入し、搬送機構２００が基板Ｗの裏面と載置台ベース２１の上方との間に配置される。この際、円弧部材２２ａは、円弧部材２２ｂ，２２ｄよりも下降した状態とすることにより、搬送機構２００が環状部材２２と接触することなく、搬送機構２００を基板Ｗの裏面と載置台ベース２１の上方との間に配置することができる。 The control unit 9 opens the gate valve 12. When the gate valve 12 is opened, the transport mechanism 200 enters the lower space 10 from the carry-in outlet 11, and the transport mechanism 200 is arranged between the back surface of the substrate W and the upper side of the mounting base 21. At this time, by setting the arc member 22a to be in a state of being lowered from the arc members 22b and 22d, the transport mechanism 200 is placed on the back surface of the substrate W and the mounting base 21 without contacting the annular member 22. It can be placed between the upper part.
　次に、制御部９は、昇降機構２８を制御して、円弧部材２２ｂ，２２ｄを搬送位置へと下降させる。これにより、円弧部材２２ｂ，２２ｄに支持された基板Ｗは、搬送機構２００に受け渡される。搬送機構２００に基板Ｗが受け渡されると、搬送機構２００は搬入出口１１から退避する。また、搬送機構２００が搬入出口１１から退避すると、制御部９は、ゲートバルブ１２を閉じる。 Next, the control unit 9 controls the elevating mechanism 28 to lower the arc members 22b and 22d to the transport position. As a result, the substrate W supported by the arc members 22b and 22d is delivered to the transport mechanism 200. When the substrate W is delivered to the transport mechanism 200, the transport mechanism 200 retracts from the carry-in outlet 11. Further, when the transport mechanism 200 retracts from the carry-in outlet 11, the control unit 9 closes the gate valve 12.
　以上のように、基板Ｗをステージ構造体２から搬送機構２００に受け渡すことができる。 As described above, the substrate W can be delivered from the stage structure 2 to the transfer mechanism 200.
　以上、第１実施形態に係る基板処理装置１００の実施形態等について説明したが、本開示は上記実施形態等に限定されるものではなく、特許請求の範囲に記載された本開示の要旨の範囲内において、種々の変形、改良が可能である。 Although the embodiment of the substrate processing apparatus 100 according to the first embodiment has been described above, the present disclosure is not limited to the above-described embodiment and the like, and the scope of the gist of the present disclosure described in the claims. Within, various modifications and improvements are possible.
　環状部材２２を構成する円弧部材２２ａ～２２ｄは、それぞれ昇降軸２７及び昇降機構２８が設けられ、独立して昇降可能に構成されるものとして説明したが、これに限られるものではない。 The arc members 22a to 22d constituting the annular member 22 have been described as being provided with an elevating shaft 27 and an elevating mechanism 28, respectively, and can be independently elevated, but the present invention is not limited thereto.
　円弧部材２２ｂ，２２ｄは、１つの昇降機構２８で昇降可能に構成されていてもよい。即ち、円弧部材２２ｂ，２２ｄは、連動して昇降する構成であってもよい。また、円弧部材２２ｂ，２２ｃ，２２ｄは、１つの昇降機構２８で昇降可能に構成されていてもよい。即ち、円弧部材２２ｂ，２２ｃ，２２ｄは、連動して昇降する構成であってもよい。これにより、昇降機構２８の数を削減することができ、コストを削減し、処理容器１の開口部１４の数を低減して気密性を向上させることができる。 The arc members 22b and 22d may be configured to be able to move up and down by one lifting mechanism 28. That is, the arc members 22b and 22d may be configured to move up and down in conjunction with each other. Further, the arc members 22b, 22c, 22d may be configured to be able to move up and down by one lifting mechanism 28. That is, the arc members 22b, 22c, 22d may be configured to move up and down in conjunction with each other. As a result, the number of elevating mechanisms 28 can be reduced, the cost can be reduced, the number of openings 14 of the processing container 1 can be reduced, and the airtightness can be improved.
　また、円弧部材２２ａは、載置台ベース２１と一体として、昇降機構２４により昇降する構成であってもよい。また、円弧部材２２ａ，２２ｃは、載置台ベース２１と一体として、昇降機構２４により昇降する構成であってもよい。これにより、昇降機構２８を削減することができ、コストを削減し、処理容器１の開口部１４の数を低減して気密性を向上させることができる。 Further, the arc member 22a may be configured to move up and down by the elevating mechanism 24 integrally with the mounting base 21. Further, the arc members 22a and 22c may be configured to move up and down by the elevating mechanism 24 integrally with the mounting base 21. As a result, the elevating mechanism 28 can be reduced, the cost can be reduced, the number of openings 14 of the processing container 1 can be reduced, and the airtightness can be improved.
　また、昇降機構２４は、載置台ベース２１を、処理位置、搬送位置の間で昇降させ、昇降機構２８は、円弧部材２２ａ～２２ｄ（環状部材２２）を、処理位置、支持位置、搬送位置の間で個別に昇降させる構成として説明したが、これに限られるものではない。例えば、第１の昇降機構は、載置台ベース２１及び円弧部材２２ａ～２２ｄ（環状部材２２）を一体として、処理位置、搬送位置の間で昇降させ、第２の昇降機構は、搬送位置にいる円弧部材２２ａ～２２ｄ（環状部材２２）に対して、支持位置、搬送位置の間で個別に昇降させる構成としてもよい。また、載置台ベース２１を処理位置、搬送位置の間で昇降させる必要がない基板処理装置１００においては、昇降機構２４を省略することができる。
  Further, the elevating mechanism 24 raises and lowers the mounting base 21 between the processing position and the conveying position, and the elevating mechanism 28 raises and lowers the arc members 22a to 22d (annular member 22) at the processing position, the supporting position, and the conveying position. Although it has been described as a configuration in which the devices are individually raised and lowered, the present invention is not limited to this. For example, the first elevating mechanism raises and lowers the mounting base 21 and the arc members 22a to 22d (annular members 22) integrally between the processing position and the conveying position, and the second elevating mechanism is in the conveying position. The arc members 22a to 22d (annular members 22) may be individually raised and lowered between the support position and the transport position. Further, in the substrate processing device 100 which does not need to raise and lower the mounting base 21 between the processing position and the transport position, the raising and lowering mechanism 24 can be omitted.
　また、環状部材２２は、周方向に対して４つの円弧部材２２ａ～２２ｄに分割されているものとして説明したが、これに限られるものではなく、２つ以上に分割されていてもよい。また、３つ以上に等分割されていてもよい。図４は、第２実施形態に係る基板処理装置１００が備えるステージ構造体２の平面図の一例である。なお、図４（及び後述する図５）において、搬入出口１１（図１，２参照）は、紙面の左側にあるものとする。図４に示すように、環状部材２２は、周方向に対して３つの円弧部材２２ｅ～２２ｇに分割されていてもよい。図５は、第３実施形態に係る基板処理装置１００が備えるステージ構造体２の平面図の一例である。図５に示すように、環状部材２２は、周方向に対して２つの円弧部材２２ｈ，２２ｉに分割されていてもよい。 Further, although the annular member 22 has been described as being divided into four arc members 22a to 22d in the circumferential direction, the present invention is not limited to this, and the annular member 22 may be divided into two or more. Further, it may be equally divided into three or more. FIG. 4 is an example of a plan view of the stage structure 2 included in the substrate processing apparatus 100 according to the second embodiment. In FIG. 4 (and FIG. 5 described later), the carry-in outlet 11 (see FIGS. 1 and 2) is assumed to be on the left side of the paper. As shown in FIG. 4, the annular member 22 may be divided into three arc members 22e to 22g in the circumferential direction. FIG. 5 is an example of a plan view of the stage structure 2 included in the substrate processing apparatus 100 according to the third embodiment. As shown in FIG. 5, the annular member 22 may be divided into two arc members 22h and 22i in the circumferential direction.
　基板処理装置１００は、ＴｉＮ膜を成膜するＡＬＤ装置である場合を例に説明したが、これに限られるものではなく、熱ＡＬＤ装置、プラズマＡＬＤ装置、熱ＣＶＤ（Chemical Vapor Deposition）装置、プラズマＣＶＤ装置等であってもよい。また、基板処理装置１００は、成膜装置に限られず、エッチング装置であってもよい。 The case where the substrate processing device 100 is an ALD device for forming a TiN film has been described as an example, but the present invention is not limited to this, and the substrate processing device 100 is not limited to this, but is limited to a thermal ALD device, a plasma ALD device, a thermal CVD (Chemical Vapor Deposition) device, and a plasma. It may be a CVD device or the like. Further, the substrate processing apparatus 100 is not limited to the film forming apparatus, and may be an etching apparatus.
　尚、本願は、２０１９年５月２９日に出願した日本国特許出願２０１９－１００６５１号に基づく優先権を主張するものであり、これらの日本国特許出願の全内容を本願に参照により援用する。 It should be noted that this application claims priority based on Japanese Patent Application No. 2019-100651 filed on May 29, 2019, and the entire contents of these Japanese patent applications are incorporated herein by reference.
１　　　　　処理容器
２　　　　　ステージ構造体
２０　　　　ヒータ
２１　　　　載置台ベース
２２　　　　環状部材
２２ａ～２２ｉ　円弧部材
２３　　　　昇降軸
２４　　　　昇降機構
２５　　　　昇降板
２７　　　　昇降軸
２８　　　　昇降機構
３　　　　　天板部
４　　　　　排気ダクト
５　　　　　第１の真空排気部
６　　　　　第２の真空排気部
７　　　　　処理ガス供給部
９　　　　　制御部
１００　　　基板処理装置
２００　　　搬送機構
Ｗ　　　　　基板 1 Processing container 2 Stage structure 20 Heater 21 Mounting table base 22 Circular member 22a to 22i Arc member 23 Elevating shaft 24 Elevating mechanism 25 Elevating plate 27 Elevating shaft 28 Elevating mechanism 3 Top plate part 4 Exhaust duct 5 First vacuum exhaust part 6 Second vacuum exhaust unit 7 Processing gas supply unit 9 Control unit 100 Board processing device 200 Conveyance mechanism W board

Claims (8)

  1. 　円板形状の載置台ベースと、
    　前記載置台ベースの外周側に配置され、周方向に対して少なくとも２以上に分割される環状部材と、
    　前記環状部材が分割されて形成される円弧部材の少なくとも１つを昇降させる昇降部と、を備える、ステージ構造体。     Disk-shaped mounting base and
    An annular member arranged on the outer peripheral side of the above-mentioned stand base and divided into at least two in the circumferential direction,
    A stage structure including an elevating portion for elevating and lowering at least one of arc members formed by dividing the annular member.
  2. 　前記環状部材は、周方向に対して３以上に等分割される、
    請求項１に記載のステージ構造体。     The annular member is equally divided into three or more in the circumferential direction.
    The stage structure according to claim 1.
  3. 　前記載置台ベースの外径は、前記載置台ベースに載置される基板の外径よりも小さく、
    　前記環状部材の内径は、前記基板の外径よりも小さく、
    　前記環状部材の外径は、前記基板の外径よりも大きい、
    請求項１または請求項２に記載のステージ構造体。     The outer diameter of the previously described pedestal base is smaller than the outer diameter of the substrate mounted on the previously described pedestal base.
    The inner diameter of the annular member is smaller than the outer diameter of the substrate.
    The outer diameter of the annular member is larger than the outer diameter of the substrate.
    The stage structure according to claim 1 or 2.
  4. 　前記環状部材は、筒状に形成される、
    請求項１乃至請求項３のいずれか１項に記載のステージ構造体。     The annular member is formed in a tubular shape.
    The stage structure according to any one of claims 1 to 3.
  5. 　前記載置台ベースに埋没されるヒータを備える、
    請求項１乃至請求項４のいずれか１項に記載のステージ構造体。     Equipped with a heater buried in the stand base described above,
    The stage structure according to any one of claims 1 to 4.
  6. 　前記昇降部は、
    　前記載置台ベースの上面と、前記環状部材の上面とを同じ高さにする第１の状態と、
    　前記載置台ベースの上面よりも、少なくとも１つの前記円弧部材の上面を高くする第２の状態と、を移動可能に構成される、
    請求項１乃至請求項５のいずれか１項に記載のステージ構造体。     The elevating part
    The first state in which the upper surface of the pedestal base described above and the upper surface of the annular member are at the same height,
    A second state in which the upper surface of at least one arc member is higher than the upper surface of the above-mentioned pedestal base is movable.
    The stage structure according to any one of claims 1 to 5.
  7. 　請求項１乃至請求項６のいずれか１項に記載のステージ構造体を備える、
    基板処理装置。     The stage structure according to any one of claims 1 to 6 is provided.
    Board processing equipment.
  8. 　円板形状の載置台ベースと、前記載置台ベースの外周側に配置され、周方向に対して少なくとも２以上に分割される環状部材と、前記環状部材が分割されて形成される円弧部材の少なくとも１つを昇降させる昇降部と、前記昇降部を制御する制御部と、を備える、ステージ構造体の制御方法であって、
    　前記制御部は、
    　前記載置台ベースの上面と前記環状部材の上面とを同じ高さにする第１の工程と、
    　前記載置台ベースの上面よりも少なくとも１つの前記円弧部材の上面を高くする第２の工程と、を実行する、ステージ構造体の制御方法。     At least a disk-shaped mounting base, an annular member arranged on the outer peripheral side of the above-described stand base and divided into at least two in the circumferential direction, and an arc member formed by dividing the annular member. It is a control method of a stage structure including an elevating part for raising and lowering one and a control part for controlling the elevating part.
    The control unit
    The first step of making the upper surface of the pedestal base described above and the upper surface of the annular member at the same height,
    A method for controlling a stage structure, wherein a second step of raising the upper surface of at least one arc member higher than the upper surface of the pedestal base described above is executed.
PCT/JP2020/020190 2019-05-29 2020-05-21 Stage structure, substrate processing device, and method for controlling stage structure WO2020241461A1 (en)

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JP2019-100651 2019-05-29
JP2019100651A JP2020193379A (en) 2019-05-29 2019-05-29 Stage structure, substrate processing device and method of controlling stage structure

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WO2020241461A1 true WO2020241461A1 (en) 2020-12-03

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114231943A (en) * 2021-12-13 2022-03-25 深圳优普莱等离子体技术有限公司 Two-stage lifting system and equipment for chemical vapor deposition

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