CN100533784C - 制备氧化锌/p型硅异质结紫外电致发光器件的方法 - Google Patents
制备氧化锌/p型硅异质结紫外电致发光器件的方法 Download PDFInfo
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- CN100533784C CN100533784C CNB2006100491780A CN200610049178A CN100533784C CN 100533784 C CN100533784 C CN 100533784C CN B2006100491780 A CNB2006100491780 A CN B2006100491780A CN 200610049178 A CN200610049178 A CN 200610049178A CN 100533784 C CN100533784 C CN 100533784C
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- sputtering
- zno
- type silicon
- zinc oxide
- zno film
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Electroluminescent Light Sources (AREA)
- Led Devices (AREA)
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CNB2006100491780A CN100533784C (zh) | 2006-01-19 | 2006-01-19 | 制备氧化锌/p型硅异质结紫外电致发光器件的方法 |
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CNB2006100491780A CN100533784C (zh) | 2006-01-19 | 2006-01-19 | 制备氧化锌/p型硅异质结紫外电致发光器件的方法 |
Publications (2)
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CN1825634A CN1825634A (zh) | 2006-08-30 |
CN100533784C true CN100533784C (zh) | 2009-08-26 |
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CNB2006100491780A Expired - Fee Related CN100533784C (zh) | 2006-01-19 | 2006-01-19 | 制备氧化锌/p型硅异质结紫外电致发光器件的方法 |
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Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1964078B (zh) * | 2006-12-20 | 2010-08-11 | 北京理工大学 | 一种用于太阳能电池的氧化锌薄膜及制备方法 |
CN100449810C (zh) * | 2006-12-30 | 2009-01-07 | 浙江大学 | 一种硅基MgxZnO1-x紫外电致发光器件及其制备方法 |
CN100463109C (zh) * | 2007-04-02 | 2009-02-18 | 中国科学院物理研究所 | ZnO金属肖特基接触的制备方法及其在紫外探测器中的应用 |
CN102162967A (zh) * | 2011-03-23 | 2011-08-24 | 长春理工大学 | ZnO基复合结构倍频材料 |
TWI470812B (zh) * | 2011-12-28 | 2015-01-21 | Ind Tech Res Inst | 異質接面太陽能電池及其電極 |
CN102610724B (zh) * | 2012-04-01 | 2014-12-17 | 浙江大学 | 一种基于CdZnO薄膜的电致发光器件及制备方法 |
CN104480427B (zh) * | 2014-12-02 | 2017-01-25 | 中国科学院上海硅酸盐研究所 | 氧化锌基稀磁半导体薄膜的制备方法及其电荷浓度的原位调控方法 |
CN105489694A (zh) * | 2016-01-14 | 2016-04-13 | 中国石油大学(华东) | 氧化锌/硅p-n异质结紫外光探测器及其制备方法 |
CN106981538B (zh) * | 2017-04-26 | 2018-12-14 | 绍兴知威光电科技有限公司 | 硅量子点增强的氧化锌紫外探测器 |
-
2006
- 2006-01-19 CN CNB2006100491780A patent/CN100533784C/zh not_active Expired - Fee Related
Non-Patent Citations (2)
Title |
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热蒸发锌粉法制备半导体氧化锌纳米线的研究. 刘建刚等.材料科学与工程学报,第23卷第1期. 2005 |
热蒸发锌粉法制备半导体氧化锌纳米线的研究. 刘建刚等.材料科学与工程学报,第23卷第1期. 2005 * |
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CN1825634A (zh) | 2006-08-30 |
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Assignee: Zhejiang Dacheng New Energy Co., Ltd. Assignor: Zhejiang University Contract record no.: 2011320001033 Denomination of invention: Method for preparing zinc oxide/p type silicon heterojunction ultraviolet electroluminescent device Granted publication date: 20090826 License type: Exclusive License Open date: 20060830 Record date: 20110719 |
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