CN100520318C - 用于监测杀菌波长的能量的紫外线传感器 - Google Patents

用于监测杀菌波长的能量的紫外线传感器 Download PDF

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CN100520318C
CN100520318C CNB2004100329778A CN200410032977A CN100520318C CN 100520318 C CN100520318 C CN 100520318C CN B2004100329778 A CNB2004100329778 A CN B2004100329778A CN 200410032977 A CN200410032977 A CN 200410032977A CN 100520318 C CN100520318 C CN 100520318C
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D·M·布朗
K·马托查
P·M·桑维克
L·罗姆巴多
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Abstract

一种紫外线传感器(10),监测在消毒系统中使用的紫外线灯的效力。该传感器包括被配置为用于检测200-300nm波长的光的协同操作的紫外线光电探测器(12)和滤波器(14,32)。用于空气或水的净化系统结合将紫外光指向空气或水的紫外线灯(44)使用该传感器。

Description

用于监测杀菌波长的能量的紫外线传感器
技术领域
本发明涉及一种响应对杀菌应用读出有效波长而定制的紫外线检测器。
背景技术
饮用水、工业用水、纯水和废水处理设备以及空气净化器采用发射紫外线的大功率灯来消毒流过灯的水或空气中的潜在的有害微生物。为了确保紫外光在消毒水或空气中的微生物过程中的效力,必须读出灯的输出功率。这些传感器可用于控制灯的输出功率以减少能量消耗,消毒微生物以及确定灯的更换要求。
紫外光的有效杀菌波长的范围通常在200-300纳米(nm),最大效力在265nm。用于提供该能量的灯通常在超过600nm的更宽的光谱上产生能量。为了保证足够的能量用于杀菌效力,传感器测量应限于有效波长中的能量。问题在于开发一种敏感元件,该元件仅对所需要的杀菌波长进行响应并在所需要的强紫外线能量的条件下呈现长寿命。
很大量的灯的光谱强度在300nm之上。因此将检测器的响应度限制为小于300nm的波长是所希望的。因为随着时间的推移灯退化或变得污浊且在短波长范围内总输出可能减小,因此重要的是监测300nm以下的光强度。否则,杀毒可能变得不彻底。
目前的废水处理系统采用硅或碳化硅(SiC)光电探测器,其对宽范围的紫外光敏感以读出穿透被处理材料(水或空气)的光功率量以控制灯的输出功率。对灯的这种控制用于将能量消耗最小化,确保对细菌的消毒并用于确定何时需要更换灯。
当前的硅传感器检测比峰值处于约1000nm的红外线的有效杀菌波长更宽的宽波长范围上的能量。因为在红外线范围中的灵敏度比在紫外线范围内的灵敏度更高,因此该宽的响应将复杂的衰减要求施加在任何附加的滤波器上。另外,由于在强紫外光下的快速恶化,这些器件呈现非常短的预期寿命。由于为了检测紫外(UV)光Si探测器要求添加磷光体这一事实,所以很容易出现上述情况。在根据有效消灭细菌所要求的由UV灯产生的高强度下,这些磷光体退化。
SiC光电二极管的出现提供了一种在不需要滤波器的情况下监测该紫外线能量的有效方法。SiC光电二极管的光谱响应很大程度地限制为200-400nm,峰值约270nm(图1)。已证明SiC光电二极管在强紫外光下具有非常长的寿命。但是,杀菌波长(300-400nm)外的UV光谱可包含来自灯的强能量峰,该能量峰降低了对杀菌有效波长的强度的监测精度。图1示出的SiC光电二极管的响应度已经降低了SiC光电二极管对300nm以上灯输出的灵敏度。但是SiC光电二极管对于300-400nm之间的那些波长仍将产生显著的输出光电流。因此,消除对300nm以上波长的响应将是所希望的。
发明内容
在本发明的实例性实施例中,提供一种紫外线传感器用于监测用于消灭微生物的预定波长的能量。该传感器包括对宽范围紫外光敏感的紫外线光电探测器,布置在一位置以截取指向紫外线光电探测器的光的滤波器。该滤波器被配置为阻挡预定波长范围外的波长的光。
在本发明的另一实例性实施例中,用于监测消毒系统中使用的紫外线灯的效力的紫外线传感器包括配置用于检测波长在200-300nm之间的光的彼此协作的紫外线光电探测器和滤波器。
在本发明的再一个实施例中,用于空气或水的净化系统包括将紫外光指向空气或水的紫外线灯和本发明的紫外线传感器。
在本发明的又一个实施例中,净化空气或水的方法包括以下步骤:用紫外线灯将紫外光指向空气或水;提供包括配置用于检测波长在200-300nm之间的光的彼此协作的紫外线光电探测器和滤波器的紫外线传感器;以及根据来自紫外线传感器的信号监测紫外线灯的效力。
附图说明
图1是示出常规碳化硅光电二极管响应度与波长关系的曲线;
图2是示出由SiC光电二极管响应度改性的灯谱的曲线;
图3是示出具有涂敷到顶面的多层的介质滤波器的碳化硅光电二极管的横截面示意图;
图4说明具有与光电二极管分开的滤波器的探测器的替换结构;
图5是示出对最佳的滤波器透射特征的预测的曲线;
图6是示出滤波器对SiC光电二极管响应度的作用以消除对300nm以上的灯发射的响应的曲线;
图7是示出探测器实例性应用的控制回路示意图;
图8是示出添加了用于周期性地测试光电二极管的功能性的诸如UV LED的紫外线光源的光电二极管外壳的示意图;以及
图9示出可移动反射快门在测试传感器窗的透明度方面的应用。
具体实施方式
图3示出本发明的探测器10的示意性横截面图,该探测器包括具有涂敷到顶面的多重介质滤波器14的SiC光电二极管12。该介质滤波器14优选淀积在SiC光电二极管12的表面上以将其响应定制用于有效监测紫外线范围内的特定光谱带。使用碳化硅和淀积的(多个)滤波器将提供能够在强紫外线辐射下具有长寿命的稳固的探测器10。在图3中,提供实例SiC光电二极管的横截面。这里,封装头部16用作光电二极管芯片的固定件。管芯接合金属18用于将光电二极管保持在位。SiC衬底20和外延层22、25包括该光电二极管实例的半导体部分。这里,n+(负)24和p-(正)22外延层用于有效地收集由预先规定的波长的紫外光导致的光产生的载流子。光学滤波器14可以由前面提到的材料组成,并且在该实施例中,是芯片的整体部分。至少部分地由Au构成的触头金属26用于为器件提供低的电阻接触,并且通过使用到这些通常也为Au的触点的引线接合28接触到光电二极管封装引线。
优选,任一已知的溅射技术可用于淀积介质滤波器,并因此不再进一步说明淀积工艺的细节。其他合适的淀积方法对于本领域普通技术人员也是显而易见的,并不意在将本发明限于所描述的实例性应用。或者,参照图4,不附于光电二极管的单独的滤波器32可以置于接收通过透镜34输入的光的SiC光电二极管12的前面,元器件包含在具有UV透明窗38的外壳36中。该布置虽然可行但没有利用集成,集成允许同时制造整体滤波器在适当位置的多个光电二极管。通过在处理顺序中包括滤波器,可以容易地完成具有整体滤波器的光电二极管的制造。例如,对于介质材料可以在一个淀积步骤中涂覆~1000或更多的器件,由此大大降低了最终器件的成本。
在一个单独的构造中,滤波器材料优选淀积在诸如石英或蓝宝石的UV透明衬底上,然后被切削到应有的尺寸或整体使用并插入在光路中。
再一个实施例可以利用更昂贵、复杂且较小实用性的光学分光计或光电分光计(photospectrometer),带有或不带有光纤输入,和/或光电倍增管。这些选项需要滤波器或者软件以确定灯功率在200-300nm所关心的范围内。
碳化硅特别适合于光电二极管12,因为其响应曲线覆盖了所关心的光谱。替换的光电二极管材料可以是AlGaN,可以将其制造为在更短的波长截止。例如,GaN光电二极管具有在365nm处的截止。添加约26%的Al来制造AlGaN光电二极管可以得到300nm的截止。然而,目前还不能从市场上买到优质的AlGaN光电二极管。相反,已良好地建立并易于得到SiC光电二极管。目前优选SiC光电二极管,虽然在未来AlGaN光电二极管可以用或不用滤波器来进行相同的功能。仍可有其他的材料适于光电二极管,例如硅、磷化砷化镓(galliumarsenidephosphode GaAsP)、氧化锌(ZnO2)、氮化铝(AlN)、氮化镓(GaN)、氮化铝铟镓(AlInGaN)和氮化铟镓(InGaN)。或者,紫外线光电探测器可以是光电倍增管。优选,组合的紫外线光电探测器和滤波器的响应度对应于微生物紫外线消毒对例如水或空气这样的特殊介质特定的效力。或者,可以使用光电分光计,这将不需要前述的那种光学滤波器。在此情况下,分光计提供了光电二极管的阵列,其中每个光电二极管读出特定的波长。然而,光电分光计比基于半导体的光电探测器更昂贵,因此优选半导体光电二极管。
滤波器14优选是短波长滤过器,它将在300nm截止。在一个实施例中,滤波器包括多层的、由SiO2、HfO2、SiO2和/或Si3N4交替层构成的介质滤波器。材料的其他组合也是适合的。可以制造滤波器14具有窄带宽特性,以监测紫外线灯的谱线组。这样一种选择性的带通滤波器可优选是例如以254nm为中心。254nm线是Hg弧光灯的强线(intense line)。也可以采用利用掺杂稀土元素的玻璃(Shott滤波器)或半导体材料的滤波器,所述半导体材料是诸如GaAsP、ZnO2、AlInGaN、GaN、AlGaN、InGaN、AlN或它们的组合。
图5示出基于典型的SiC光电二极管的灵敏度(响应度)(方形点划线)和对于这些系统典型的适合于消灭细菌的光(辐射)的有效波长带(菱形点划线)的最佳的滤波器透射特性。对于最佳的滤波器特性的预测从高强度水银灯(中心辐射在254nm)获取典型的光输出,并允许光电二极管仅响应最有效的杀伤带(中心处于265nm)。
这是“最佳”设计的一个实施例,其提议最佳响应度曲线具有接近258nm的中心响应波长。当然,当置于光路中在其响应度快速下降到低于270nm的SiC光电二极管的前面时,任何阻挡300nm以上辐射的滤波器都可以是合适的。
图6中的方形点划线示出典型的水银灯谱的输出。注意,发射峰在254nm。已模拟阻挡300nm以上的辐射的滤波器的一个原理(三角点化线),其消除了对300nm以上光的(如光电二极管所读出的)灵敏度。该光(300nm以上)基本上是无用的,并可能对评估灯的条件即其杀伤/消毒细菌的效力没有益处。
经滤波的SiC光电二极管被连接到信号调节电路,以提供特定应用所需要的电流、电压频率或数字输出。
来自消毒灯的光通过要被消毒的介质(水或空气)并照射到滤波器上,然后由探测器10测量。滤波器和传感器的组合仅测量对消灭微生物有效的光波长。其增益由反馈网络确定的电流电压放大器放大光电二极管信号。该网络能够提供可调增益用于校准。来自放大器的输出可被转换为工业标准电流输出,或转换为所需要的电压、频率或数字输出。
在一个实施例中,参考图7,探测器10用作包括诸如CPU等的处理器和紫外线等44的控制回路的一部分。处理器42接收来自紫外线传感器10的信号并根据紫外线传感器信号控制紫外线等44的输出。以这种方式,可以监测紫外线灯44的效力并可实时控制灯输出。此外,参考图8,可以利用发射200-300nm光的附加紫外线光源46,使得其发射可以由光电二极管12读出。该UV光源46可用于偶尔测试光电二极管,并确定其在时间过程上的功能性。该附加紫外线光源46可例如是UV LED器件,其可用非整体的或整体的滤波器测试光电二极管。此外,如图9所示,反射可动板48和快门50可恰好安装在窗外与再一个UV发射器52和不透明墙54组合以便测定窗涂层。
本发明的传感器适用于紫外线消毒工业,以便监测提供在杀菌谱中的能量。传感器确保在合适波长的足够能量总是可用于有效的消毒。信号可用于控制灯输出并用于不适当的紫外线水平的报警。
虽然已结合目前被认为是最实用和优选的实施例对本发明进行了说明,应该理解,本发明不限于所公开的实施例,相反,本发明意在覆盖包括在所附权利要求的精神和范围内的各种变型和等效方案。

Claims (6)

1.一种紫外线传感器,用于监测用于消灭微生物的预定波长的能量,该传感器包括:
对紫外光范围敏感的紫外线碳化硅光电探测器(12),其中所述紫外线碳化硅光电探测器(12)包括碳化硅衬底(20)以及负和正外延层(22,24);和
布置来截取指向紫外线碳化硅光电探测器的光的滤波器(14,32),该滤波器被配置为允许200和300nm之间的波长的光通过并阻挡波长超过300nm的光,该滤波器沉积在紫外线碳化硅光电探测器上,从而该滤波器和紫外线碳化硅光电探测器形成单片元件,该滤波器是由多层介质层构成的。
2.根据权利要求1的传感器,其中紫外线碳化硅光电探测器(12)是光电二极管。
3.根据权利要求1的传感器,其中紫外线碳化硅光电探测器(12)是光电倍增管。
4.根据权利要求1的传感器,其中滤波器(14,32)是具有从220nm到300nm的带通区域的带通滤波器。
5.根据权利要求1的传感器,其中组合的紫外线碳化硅光电探测器(12)和滤波器(14,32)的响应度对应于对水或空气特定的紫外线消灭微生物的效力。
6.根据权利要求1的传感器,其中该介质层是由选自SiO2、HfO2、Si3N4或它们的组合的材料构成的。
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