CN100514166C - Pixel structure and its repairing method - Google Patents
Pixel structure and its repairing method Download PDFInfo
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- CN100514166C CN100514166C CNB2006101625566A CN200610162556A CN100514166C CN 100514166 C CN100514166 C CN 100514166C CN B2006101625566 A CNB2006101625566 A CN B2006101625566A CN 200610162556 A CN200610162556 A CN 200610162556A CN 100514166 C CN100514166 C CN 100514166C
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Abstract
A pixel structure comprises a standby thin film transistor and a working thin film transistor. A grid electrode or drain electrode of the standby thin film transistor is preserved as an independent metal electrode. When a bad pixel appears, the standby thin film transistor substitutes for the working thin film transistor, and then the bad pixel can be recovered as a normal pixel. The repairing method of the present invention is that: the drain electrode of the working thin film transistor with the bad pixel appearing is cut off from an electric pathway of a pixel electrode; the grid electrode of the standby thin film transistor is electrically connected with a scanning line or with the pixel electrode, so as to replace the working thin film transistor.
Description
Technical field
The present invention is relevant a kind of dot structure and method for repairing and mending thereof, particularly a kind of dot structure and method for repairing and mending that utilizes standby thin film transistor (TFT) with the faulty restoration pixel.
Background technology
The pixel of Thin Film Transistor-LCD is repaired, and mode commonly used is that the bright point repairing with pixel becomes permanent dim spot or little bright spot, but still is the permanent defects point.
Figure 11 shows that the equivalent circuit diagram of known pixels structure, the circuit of thin film transistor (TFT) is described, wherein the grid 410 of thin film transistor (TFT) electrically connects sweep trace 200, and source electrode 420 electrically connects data line 100, and drain electrode 430 electrically connects pixel electrode 300.
Fig. 2 is the equivalent circuit diagram that the permanent dim spot of prior art is repaired, the drain electrode 430 of thin film transistor (TFT) is seen through repairs point 510 short circuits and electrically connect sweep trace 200, because of pixel electrode 300 directly and sweep trace 200 conductings form permanent dim spot.
Figure 3 shows that the equivalent circuit diagram that the permanent little bright spot of technology is repaired, the drain electrode 430 of thin film transistor (TFT) is seen through repair point 520 short circuits and electrically connect data line 100, because of pixel electrode 300 and data line 100 conductings form permanent little bright spot.
Dim spot or little bright spot are the permanent defects of LCD, the quality of LCD will be influenced, the bright spot pixel is serious flaw in Thin Film Transistor-LCD, the general repairing method that uses is accomplished dim spot or little bright spot with bright spot, but this repairing method is to utilize than nibs to substitute big flaw, quality-improving for LCD is limited, and it is the important technology of Thin Film Transistor-LCD that repairing pixel is avoided the flaw point.
Summary of the invention
For addressing the above problem, one of purpose of the present invention provides a kind of dot structure, utilize the usefulness of a standby thin film transistor (TFT) as the bodging pixel, standby thin film transistor (TFT) has on one grid can keep driving force to promote space availability ratio, and so preparing structure does not influence the aperture opening ratio of Thin Film Transistor-LCD.
For addressing the above problem, one of purpose of the present invention is to provide a kind of method for repairing and mending of dot structure with the faulty restoration pixel, utilizes standby thin film transistor (TFT) to replace the permanent defects repairing method of dim spot or little bright spot.
For reaching above-mentioned purpose, one embodiment of the invention provide a kind of dot structure, are disposed on the substrate, and this substrate disposes many data lines and the sweep trace intersection defines a plurality of pixel regions.Arbitrary pixel comprises a first film transistor, one second thin film transistor (TFT), a pixel electrode one repairing pattern.Wherein first and second thin film transistor (TFT) all comprises a grid, one source pole and a drain electrode, and the grid of this second thin film transistor (TFT) is an independent metal electrode.By data line and first and second thin film transistor (TFT) of scanning line driving, wherein the first film transistor drain and pixel electrode electrically connect, and the grid of second thin film transistor (TFT) is left independent metal electrode.Repair pattern and source electrode and drain electrode and be same rete, and its two end is across the grid of the transistorized grid of the first film and second thin film transistor (TFT).
For reaching above-mentioned purpose, the invention provides a kind of method for repairing and mending of dot structure, promptly when bad pixel takes place, cut off the first film transistor drain and pixel electrode, and repair pattern to electrically connect the grid of first and second thin film transistor (TFT) by one, change by second thin film transistor (TFT) driving pixel electrode.
For keeping the driving force of pixel electrode to promote space availability ratio, transistor seconds adopts two grid design, its be with the same rete of pixel electrode on grid on is set, relative with the grid of second thin film transistor (TFT), and electrically connect by the grid of contact hole and this second thin film transistor (TFT).
Description of drawings
Figure 1 shows that the equivalent circuit diagram of the dot structure of prior art.
Figure 2 shows that the equivalent circuit diagram of the permanent dim spot repairing of prior art.
Figure 3 shows that the equivalent circuit diagram of permanent little bright spot repairing of prior art.
Figure 4 shows that the dot structure equivalent circuit diagram of one embodiment of the invention.
Figure 5 shows that first embodiment of the invention dot structure overlook Organization Chart.
Figure 6 shows that second embodiment of the invention dot structure overlook Organization Chart.
Figure 7 shows that cross-sectional schematic for the thin dot structure of second embodiment of the invention.
Figure 8 shows that the equivalent circuit diagram of the dot structure of third embodiment of the invention.
Figure 9 shows that third embodiment of the invention dot structure overlook Organization Chart.
Figure 10 shows that fourth embodiment of the invention dot structure overlook Organization Chart.
Symbol description among the figure
100 data lines
200 sweep traces
300 pixel electrodes
410,810 grids
420,820 source electrodes
430,830 drain electrodes
510,520,531,541,532,542 repair point
530,540 repair pattern
600 cut-out points
840, grid on 850
841,851 second contact holes
861 first contact holes
Embodiment
The dot structure system of Thin Film Transistor-LCD is arranged on the substrate, substrate is provided with many data lines and intersects with sweep trace and define a plurality of pixel regions, each pixel region comprises a first film transistor, one second thin film transistor (TFT), one pixel electrode and one is repaired pattern, wherein first and second thin film transistor (TFT) all comprises a grid, source electrode and drain electrode, by data line and scanning line driving the first film transistor AND gate second thin film transistor (TFT), wherein the first film transistor drain and pixel electrode electrically connect, and the grid of second thin film transistor (TFT) or drain electrode remain independent metal electrode.
The method of repairing when bad pixel takes place, is cut off pixel electrode and the first film transistor drain, connects the grid or the drain electrode of first and second thin film transistor (TFT), changes by second thin film transistor (TFT) driving pixel electrode, with the faulty restoration pixel.Cutting-off method cut commonly used, and connection side's rule is utilized the method for laser welding.
Can not make the shared volume of second thin film transistor (TFT) excessive for promoting space availability ratio, and keep driving force to pixel electrode, on the rete of pixel electrode, grid with respect to second thin film transistor (TFT) is provided with grid on, and electrically connect the grid and the last grid of second pixel electrode, so increase the electric current channel to keep driving force, go up wherein that grid can be designed to a transparency electrode and with the same step of pixel electrode in form.
For ease of understanding the present invention, below utilize the different embodiment of graphic cooperation so that spirit of the present invention to be described.
Figure 4 shows that the equivalent circuit diagram of first embodiment of the present invention's one dot structure.The transistorized grid 410 of the first film electrically connects one scan line 200, and source electrode 420 electrically connects a data line 100, and drain electrode 430 electrically connects pixel electrode 300.The grid 810 of second thin film transistor (TFT) is an independent metal electrode, source electrode 820 electrically connects data line 100, drain electrode 830 electrically connects pixel electrode 300, in source electrode 820 and 830 the rete of draining, be provided with one and repair pattern 530, its two ends are for repairing the grid 410,810 that point 531,532 is across first and second thin film transistor (TFT).
Cut off the first film transistor drain 430 and pixel electrode 300 in cut-out point 600, in repairing a grid 810 of 531,532 electric connection the first film transistor AND gates, second thin film transistor (TFT) and repairing pattern 530.
Figure 5 shows that first embodiment of the invention dot structure overlook Organization Chart, the grid 810 of second thin film transistor (TFT) is an independent metal electrode among the figure, source electrode 820 electrically connects these data lines 100, drain electrode 830 electrically connects pixel electrodes 300.The transistorized grid 410 of the first film is electrically connected at sweep trace 200, source electrode 420 is electrically connected at sweep trace 100, drain electrode 430 with one first contact hole (Contact Hole CH) 861 electrically connects pixel electrodes 300, and with drain electrode 830 conductings of second thin film transistor (TFT).
A cut-out point 600 is established in the drain electrode 430 of the top, space that the transistorized grid of pixel electrode 300 and the first film is 410, and in source electrode 410,810 and 430,830 the rete of draining, be provided with one and repair pattern 530, its two end is overlapping with the grid 410,810 of the first film transistor AND gate second thin film transistor (TFT) respectively for repairing point 531,532.
When bad pixel occurring, utilize laser cutting method to cut off being connected of the first film transistor drain 430 and pixel electrode 300 in cut-out point 600 places.Utilize laser welding to repair the repairing point 531 and 532 of pattern 530 again, make grid 410,810 conductings of first and second thin film transistor (TFT), so change by second thin film transistor (TFT) driving pixel electrode 300 with the bodging pixel.
Figure 6 shows that the second embodiment of the present invention dot structure overlook Organization Chart, with the difference of first embodiment is to adopt the bigrid design, be provided with in the rete of the going up of second thin film transistor (TFT), pixel electrode 300 that grid 840 utilizes one second contact hole 841 to electrically connect and goes up grid 840 and its grid 810 corresponding to this grid 810 on one.
Figure 7 shows that the cut-open view of second thin film transistor (TFT) of second embodiment of the invention, transistor seconds has grid 840 on grid 810 and, because last grid 840 and grid 810 mutual conduction, make semiconductor layer induce bigger current path and keep the driving force of pixel electrode.
Figure 8 shows that the equivalent circuit diagram of third embodiment of the invention.The transistorized grid 410 of the first film electrically connects one scan line 200, and source electrode 420 electrically connects a data line 100, and drain electrode 430 electrically connects pixel electrode 300.The grid 810 of second thin film transistor (TFT) electrically connects sweep trace 200, and source electrode 820 electrically connects data line 100, and drain electrode 830 is an independent metal electrode, and a repairing pattern 540 is set.Cut off the connection of the first film transistor drain 430 pixel electrodes 300 prior to cut-out point 600 during reparation,, so change driving pixel electrode by second thin film transistor (TFT) again in the drain electrode 830 of repairing point 541,542 first and second thin film transistor (TFT)s of electric connection.
Figure 9 shows that third embodiment of the invention thin film transistor (TFT) overlook Organization Chart, the grid 810 of second thin film transistor (TFT) electrically connects sweep traces 200 among the figure, source electrode 820 electrically connects data lines 100, drain electrode 830 is an independent metal electrode.The transistorized grid 410 of the first film is electrically connected at sweep trace 200, and source electrode 420 is electrically connected at sweep trace 100, and drain electrode 430 electrically connects pixel electrode 300 with first contact hole 861.
The drain electrode 430 of the top, space that the transistorized grid of pixel electrode 300 and the first film is 410 is provided with a cut-out point 600, and a repairing pattern 540 is set in the rete of grid 410,810, its two end is overlapping with the drain electrode 830 of the first film transistor drain 430 and second thin film transistor (TFT) respectively for repairing point 541,542.
Figure 10 shows that fourth embodiment of the invention thin film transistor (TFT) overlook Organization Chart, with the difference of the 3rd embodiment is to adopt the bigrid design, be provided with in the rete of the going up of this second thin film transistor (TFT), pixel electrode that grid 850 utilizes one second contact hole 851 to electrically connect and goes up grid 850 and its grid 810 corresponding to grid 810 on one.
Similar forenamed first and second embodiment of the repairing method of the 3rd and the 4th embodiment, utilize laser cutting method to cut off the circuit of the first film transistor drain 430 and pixel electrode 300 in cut-out point 600, utilize the laser welding method to drive pixel electrode 300 in repairing point 541 and 542 again to electrically connect the drain electrode 830 of repairing pattern 540 and the first film transistor drain 430 and second thin film transistor (TFT), so just to change by second thin film transistor (TFT).
Only the above only is preferred embodiment of the present invention, when not limiting the scope of the invention with this.Promptly the equalization of being done according to the present patent application claim generally changes and modifies, the main idea place that will not lose the present invention, and the spirit and the scope that also do not break away from the present invention, the former capital should be considered as further enforcement situation of the present invention.
Claims (9)
1. a dot structure is disposed on the substrate, and this dot structure comprises:
An one scan line and a data line, this sweep trace and this data line cross-over configuration are on this substrate;
One the first film transistor is disposed on this substrate, drives by this sweep trace and this data line, and wherein this first film transistor comprises a grid, one source pole and a drain electrode;
One second thin film transistor (TFT) is disposed on this substrate, drives by this sweep trace and this data line, and wherein this second thin film transistor (TFT) comprises a grid, one source pole and a drain electrode, and the grid of this second thin film transistor (TFT) is an independent metal electrode;
One pixel electrode is disposed on this substrate, and this pixel electrode electrically connects these drain electrodes via one first contact hole; And
One repairs pattern, and its two end is across the grid of the transistorized grid of this first film and this second thin film transistor (TFT) respectively, and should to repair that pattern and these source electrodes and these drain be same rete.
2. dot structure as claimed in claim 1, wherein this second thin film transistor (TFT) comprises more that the grid of grid and this second thin film transistor (TFT) is oppositely arranged on one, and upward grid and this pixel electrode are same rete, and grid of grid and this second thin film transistor (TFT) electrically connects on this.
3. dot structure as claimed in claim 2 wherein should be gone up the grid electric connection of grid via one second contact hole and this second thin film transistor (TFT).
4. dot structure as claimed in claim 2, wherein should go up grid is a transparency electrode.
5. dot structure method for repairing and mending, wherein this dot structure comprises the transistorized grid of a first film, source electrode and drain electrode electrically connects one scan line, a data line and a pixel electrode respectively, the grid of one second thin film transistor (TFT) is a floating electrode, source electrode and drain electrode electrically connect this data line and this pixel electrode respectively, one repairs pattern, its two end is across the grid of the transistorized grid of this first film and this second thin film transistor (TFT) respectively, and this pixel method for repairing and mending comprises:
Cut off this first film transistor drain and this pixel electrode; And
Electrically connect the grid and the transistorized grid of this first film of this second thin film transistor (TFT).
6. dot structure method for repairing and mending as claimed in claim 5, wherein this cut-out step is a laser cutting method.
7. dot structure method for repairing and mending as claimed in claim 5, wherein this electric connection step is a laser welding method.
8. dot structure method for repairing and mending as claimed in claim 5, wherein this electric connection step electrically connects the grid of the transistorized grid of this first film and this second thin film transistor (TFT) respectively with this repairing pattern.
9. dot structure method for repairing and mending as claimed in claim 5, wherein more to comprise on one grid corresponding with the grid of this second thin film transistor (TFT) for this second thin film transistor (TFT), and should go up grid electric connection of grid and this second thin film transistor (TFT).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006101625566A CN100514166C (en) | 2006-11-27 | 2006-11-27 | Pixel structure and its repairing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006101625566A CN100514166C (en) | 2006-11-27 | 2006-11-27 | Pixel structure and its repairing method |
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| CN101191964A CN101191964A (en) | 2008-06-04 |
| CN100514166C true CN100514166C (en) | 2009-07-15 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101969044A (en) * | 2010-08-25 | 2011-02-09 | 友达光电股份有限公司 | Pixel structure repairing method, repaired pixel structure and pixel array |
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| TWI414032B (en) | 2009-06-15 | 2013-11-01 | Au Optronics Corp | Driver circuit structure |
| CN101582252B (en) * | 2009-06-22 | 2011-08-10 | 友达光电股份有限公司 | Driving circuit structure and repairing method thereof |
| TWI445180B (en) * | 2011-09-28 | 2014-07-11 | E Ink Holdings Inc | Array substrate and display apparatus using the same |
| CN103839961B (en) * | 2012-11-23 | 2017-09-01 | 上海天马微电子有限公司 | Pixel unit, display device and defect repairing method |
| CN103345093B (en) * | 2013-06-28 | 2015-12-02 | 京东方科技集团股份有限公司 | Pixel cell, array base palte and manufacture, restorative procedure and display device |
| CN103680370A (en) * | 2013-12-17 | 2014-03-26 | 深圳市华星光电技术有限公司 | Display device and test circuit repairing method thereof |
| CN104849883A (en) * | 2015-05-20 | 2015-08-19 | 武汉华星光电技术有限公司 | Bright point repair method and device for liquid crystal panel and liquid crystal panel with bright points repaired |
| CN105047163A (en) * | 2015-08-27 | 2015-11-11 | 京东方科技集团股份有限公司 | Structure of gate on array (GOA) and repairing method and array substrate thereof |
| CN108594553B (en) * | 2018-05-08 | 2022-09-09 | 京东方科技集团股份有限公司 | Array substrate, repairing method thereof and display device |
| CN110767700B (en) * | 2018-12-29 | 2022-05-06 | 云谷（固安）科技有限公司 | OLED array substrate, preparation method, display screen and display terminal |
| CN112868148A (en) * | 2019-03-01 | 2021-05-28 | Gan系统公司 | Fast pulse, high current laser driver |
| CN112820202B (en) * | 2019-10-30 | 2023-03-28 | 海信视像科技股份有限公司 | Display device and display method thereof |
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2006
- 2006-11-27 CN CNB2006101625566A patent/CN100514166C/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101969044A (en) * | 2010-08-25 | 2011-02-09 | 友达光电股份有限公司 | Pixel structure repairing method, repaired pixel structure and pixel array |
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|---|---|
| CN101191964A (en) | 2008-06-04 |
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Effective date of registration: 20160812 Address after: The Marshall Islands Majuro Adger Island Road trust company Tektronix Tektronix Adger areas MH96960 Patentee after: Hao Chi intangible asset management Investment Limited Address before: China Taiwan Taoyuan bade City Patentee before: Chunghwa Picture Tubes Ltd. |
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Effective date of registration: 20161207 Address after: 430070 Hubei City, Wuhan Province, East Lake Development Zone, high tech Avenue, No. 666 biological city C5 building, Patentee after: Wuhan Hua Xing photoelectricity technology corporation, Ltd. Address before: The Marshall Islands Majuro Adger Island Road trust company Tektronix Tektronix Adger areas MH96960 Patentee before: Hao Chi intangible asset management Investment Limited |