CN102053430B - Liquid crystal display device having a plurality of pixel electrodes - Google Patents
Liquid crystal display device having a plurality of pixel electrodes Download PDFInfo
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- CN102053430B CN102053430B CN200910198135A CN200910198135A CN102053430B CN 102053430 B CN102053430 B CN 102053430B CN 200910198135 A CN200910198135 A CN 200910198135A CN 200910198135 A CN200910198135 A CN 200910198135A CN 102053430 B CN102053430 B CN 102053430B
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- liquid crystal
- data line
- crystal indicator
- thin film
- film transistor
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- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 102
- 239000010409 thin film Substances 0.000 claims abstract description 74
- 229910052751 metal Inorganic materials 0.000 claims description 28
- 239000002184 metal Substances 0.000 claims description 28
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 4
- 238000005452 bending Methods 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 4
- 238000010586 diagram Methods 0.000 description 27
- 230000008439 repair process Effects 0.000 description 10
- 238000000034 method Methods 0.000 description 3
- 238000001182 laser chemical vapour deposition Methods 0.000 description 2
- 238000002679 ablation Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
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Abstract
The present invention relates to a liquid crystal display device. The liquid crystal display device comprises a scanning line, a data line intersecting with the scanning line and a pixel unit defined by the scanning line and the data line, wherein the pixel unit comprises a thin film transistor and a pixel electrode, the thin film transistor comprises a grid electrode, a source electrode and a drain electrode, the data line comprises a plurality of branches which are arranged at two sides of the scanning line and extend into the pixel unit, the grid electrode of the thin film transistor is connected with the scanning line, the drain electrode of the thin film transistor is connected with the pixel electrode, and the source electrode of the thin film transistor is connected with the data line through the plurality of branches of the data line. The liquid crystal display device can ensure the repairing effect and has larger aperture opening ratio.
Description
Technical field
The present invention relates to a kind of liquid crystal indicator.
Background technology
Liquid crystal indicator is because of having wide viewing angle, high brightness, high-contrast, low energy consumption, advantage such as volume is frivolous and being widely used.See also Fig. 1, Fig. 1 is a kind of dot structure synoptic diagram of liquid crystal indicator of prior art.This liquid crystal indicator 10 comprises sweep trace 11, the data line 12 that intersects with this sweep trace 11 and the pixel cell that is defined by this sweep trace 11 and this data line 12.Intersection at this sweep trace 11 and this data line 12 is provided with dielectric layer between this sweep trace 11 and this data line 12, and this dielectric layer makes this sweep trace 11 be electrically insulated from each other with this data line 12.In the intersection of this sweep trace 11 and this data line 12, this data line 12 is divided into many branch roads, wherein, two branch roads only is shown in the accompanying drawing.
This pixel cell comprises a thin film transistor (TFT) 13 and a pixel electrode 14; The grid of this thin film transistor (TFT) 13 connects this sweep trace 11; The source electrode of this thin film transistor (TFT) 13 connects this data line 12 via the branch of this data line, and the drain electrode of this thin film transistor (TFT) 13 connects this pixel electrode 14.
In the manufacture process of this liquid crystal indicator 10, the dielectric layer regular meeting of this sweep trace 11 and data line 12 intersections makes this sweep trace 11 and data line 12 phenomenon that is short-circuited because of quality is bad.To this problem; Prior art is cut off the branch road that this sweep trace 11 and data line 12 intersections are short-circuited usually; Mode through laser chemical vapor deposition forms a metal level then, utilizes this metal level that the branch road two ends that cut off are connected to repair again.After the branch road that perhaps this sweep trace 11 and data line 12 intersections is short-circuited cut off, directly the branch road that is not short-circuited of utilization connected repairing, thereby has saved the laser chemical vapor deposition operation.
Intersection at this sweep trace 11 and this data line 12; This data line 12 is divided into many branch roads to repair; Can prevent the intersection short circuit of this sweep trace 11 and this data line 12, yet the resistance of repairing the intersection, back for assurance is not excessive; The needs of these data line 12 each branch roads guarantee certain width, therefore can reduce the aperture opening ratio of pixel cell.
Summary of the invention
The object of the present invention is to provide a kind of repairing effect that can guarantee to have the liquid crystal indicator of big aperture opening ratio simultaneously.
A kind of liquid crystal indicator; The data line that comprises sweep trace, intersects with this sweep trace and by the pixel cell of this sweep trace and data line definition; This pixel cell comprises thin film transistor (TFT) and pixel electrode; This thin film transistor (TFT) comprises grid, source electrode and drain electrode, and this data line comprises at least two branches that are arranged at these sweep trace both sides and in this pixel cell, extend, and the grid of this thin film transistor (TFT) connects this sweep trace; The drain electrode of this thin film transistor (TFT) connects this pixel electrode, and the source electrode of this thin film transistor (TFT) connects this data line via at least two branches of this data line.
The preferred a kind of technical scheme of the present invention, the source electrode of this thin film transistor (TFT) takes the shape of the letter U, and the drain electrode of this thin film transistor (TFT) is arranged in the U-shaped opening of this source electrode.
The preferred a kind of technical scheme of the present invention, the U-shaped opening direction of the source electrode of this thin film transistor (TFT) is parallel with the bearing of trend of this sweep trace.
The preferred a kind of technical scheme of the present invention, two side arms of the U-shaped source electrode of this thin film transistor (TFT) are arranged at the both sides of this sweep trace, and these two side arms are connected with this data line via the branch that is arranged at these sweep trace both sides respectively.
The preferred a kind of technical scheme of the present invention, the U-shaped opening direction of the source electrode of this thin film transistor (TFT) is vertical with the bearing of trend of this sweep trace.
The preferred a kind of technical scheme of the present invention, the source electrode of this thin film transistor (TFT) is elongated, and it is regional superimposed that the zone at the source electrode place of this thin film transistor (TFT) and this sweep trace belong to.
The preferred a kind of technical scheme of the present invention, this liquid crystal indicator also comprises a metal level, this metal level is arranged at the surface of this data line of the infall of this data line and this sweep trace.
The preferred a kind of technical scheme of the present invention, this metal level also are arranged at the surface of source electrode of branch and this thin film transistor (TFT) of this data line.
The preferred a kind of technical scheme of the present invention, this metal level contacts with this data line via the contact hole of the infall both sides that are arranged at this data line and this sweep trace.
The preferred a kind of technical scheme of the present invention, this contact hole is thin-and-long.
The preferred a kind of technical scheme of the present invention, in the position of this contact hole, the width widen of this data line, the place of widening of this data line is square perhaps circular or oval.
The preferred a kind of technical scheme of the present invention, this metal level directly contacts with this data line.
The preferred a kind of technical scheme of the present invention, the material of this metal level is tin indium oxide or indium zinc oxide.
The preferred a kind of technical scheme of the present invention, at least two branches of this data line, this data line and the zone that source electrode enclosed of this thin film transistor (TFT) form perforate.
The preferred a kind of technical scheme of the present invention, in this pixel cell, this sweep trace is bending, and stagger in the zone at the drain electrode place of this sweep trace and this thin film transistor (TFT).
The preferred a kind of technical scheme of the present invention, in this pixel cell, the area part at the zone at this thin film transistor (TFT) place and this sweep trace place is overlapping.
The preferred a kind of technical scheme of the present invention, this data line also comprises the branch that is arranged at this data line and sweep trace infall, this branch is superimposed with this sweep trace and be connected with the source electrode of this thin film transistor (TFT).
The preferred a kind of technical scheme of the present invention, the grid of this thin film transistor (TFT) is partly formed by the broadening of this sweep trace in this pixel cell.
Compared with prior art, liquid crystal indicator application setting of the present invention is used to connect the patch cord of the branch of thin film transistor (TFT) source electrode as this data line in the both sides of this sweep trace.Need not form a plurality of branches in the intersection of data line and sweep trace, thereby enlarge the aperture opening ratio of this liquid crystal indicator when can guarantee repairing effect.
Description of drawings
Fig. 1 is a kind of synoptic diagram of dot structure of liquid crystal indicator of prior art.
Fig. 2 is the synoptic diagram of dot structure of the liquid crystal indicator of first embodiment of the present invention.
Fig. 3-Fig. 5 is the reparation synoptic diagram of the dot structure of liquid crystal indicator shown in Figure 2.
Fig. 6 is the synoptic diagram of dot structure of the liquid crystal indicator of second embodiment of the present invention.
Fig. 7 is the synoptic diagram of dot structure of the liquid crystal indicator of the 3rd embodiment of the present invention.
Fig. 8 is the reparation synoptic diagram of the dot structure of liquid crystal indicator shown in Figure 7.
Fig. 9 is the synoptic diagram of dot structure of the liquid crystal indicator of the 4th embodiment of the present invention.
Figure 10 is the synoptic diagram of dot structure of the liquid crystal indicator of the 5th embodiment of the present invention.
Figure 11 is the reparation synoptic diagram of the dot structure of liquid crystal indicator shown in Figure 10.
Figure 12 is the synoptic diagram of dot structure of the liquid crystal indicator of the 6th embodiment of the present invention.
Figure 13 is the synoptic diagram of dot structure of the liquid crystal indicator of the 7th embodiment of the present invention.
Figure 14 is the synoptic diagram of dot structure of the liquid crystal indicator of the 8th embodiment of the present invention.
Figure 15 is the synoptic diagram of dot structure of the liquid crystal indicator of the 9th embodiment of the present invention.
Figure 16 is the synoptic diagram of dot structure of the liquid crystal indicator of the tenth embodiment of the present invention.
Embodiment
For making the object of the invention, technical scheme and advantage clearer, the present invention is made further detailed description below in conjunction with accompanying drawing.
See also Fig. 2, Fig. 2 is the synoptic diagram of dot structure of the liquid crystal indicator of first embodiment of the present invention.The sweep trace 202 that this liquid crystal indicator 20 comprises data line 201, intersect with this data line 201 and by the pixel cell of this data line 201 and 202 definition of this sweep trace.In the intersection of this data line 201 and this sweep trace 202, this data line 201 comprises at least two branches 205 that are arranged at these intersection sweep trace 202 both sides and in this pixel cell, extend.Preferably, this data line 201 comprises two branches 205, and this two branch 205 is provided with respectively and these sweep trace 202 both sides.
This pixel cell comprises thin film transistor (TFT) 203 and pixel electrode 204.This thin film transistor (TFT) 203 comprises grid 206, source electrode 207 and drains 208.The grid 206 of this thin film transistor (TFT) 203 is partly formed by this sweep trace 202 broadening in this pixel cell.The source electrode 207 of this thin film transistor (TFT) 203 is arranged on this grid with drain electrode 208.The source electrode 207 of this thin film transistor (TFT) 203 takes the shape of the letter U, and the opening direction of this U type source electrode 207 is parallel with the direction that this sweep trace 202 extends.This U-shaped source electrode 207 comprises two side arms and a bottom, and these two side arms are arranged at the both sides of this sweep trace 202 and link to each other through this bottom.This source electrode 207 connects this data line 201 via at least two branches 205 of this data line 201, and preferred, two side arms of this U-shaped source electrode 207 are connected with this data line 201 via the branch 205 that is arranged at these sweep trace 202 both sides respectively.The zone that at least two branches 205 of this data line 201, this data line 201 and the source electrode 207 of this thin film transistor (TFT) 203 are enclosed forms perforate.The drain electrode 208 of this thin film transistor (TFT) 203 connects this pixel electrode 204, and this drain electrode 208 is arranged in the opening of this source electrode 207.Preferably; In this pixel cell; This sweep trace 202 is bending; Staggered in this sweep trace 202 and the zone at drain electrode 208 places of this thin film transistor (TFT) 203, can reduce the stray capacitance of 202 of drain electrode 208 and this sweep traces of this thin film transistor (TFT) 203 like this, thereby avoided the generation of bad phenomenon such as flicker.
Fig. 3-Fig. 5 is the reparation synoptic diagram of the dot structure of liquid crystal indicator shown in Figure 2.As shown in Figure 3; When short circuit appears in the intersection 209 of this data line 201 and this sweep trace 202; Only need this data line 201 is carried out cut in the both sides 210 of this intersection 209; Then the electric current in this data line 201 flows through this intersection 209 through the source electrode 207 of the branch of this data line 201 205 and this thin film transistor (TFT) 203, thereby repairs the pixel cell of this liquid crystal indicator 20, and the current direction in this data line 201 is as shown in Figure 4.
When this data line 201 occurs opening circuit in the intersection 209 with this sweep trace 202; Electric current in this data line 201 flows through this intersection 209 through the source electrode 207 of the branch of this data line 201 205 and this thin film transistor (TFT) 203; Thereby repair the pixel cell of this liquid crystal indicator 20, the current direction in this data line 201 is as shown in Figure 4.
When branch 205 that this data line 201 is connected with the source electrode 207 of this thin film transistor (TFT) 203 opened circuit, data line 201 connected these these thin film transistor (TFT) 203 source electrodes 207 by other branches 205, thus this thin film transistor (TFT) 203 operate as normal still.
With this liquid crystal indicator 20 serves as that long white mode is an example, and when the source electrode of this thin film transistor (TFT) 20 207 during with grid 206 short circuits, the concealed wire under the white picture will appear in this liquid crystal indicator 20; At this moment, all branches of this data line 201 are carried out laser cutting, carry out laser bonding at the superimposed place 214 of this drain electrode 208 and this grid 206 then; As shown in Figure 5; Make the voltage of voltage and this sweep trace 202 of this pixel electrode 204 idiostatic, thereby pixel is become bright spot, make concealed wire disappear.
Compared with prior art; The branch 205 of the data line 201 of the liquid crystal indicator 20 of first embodiment of the invention is arranged at the both sides of this sweep trace 202 and extends in this pixel cell; This branch 205 does not receive the restriction of the live width and the size of the space between two pixel cells of this data line 12; Therefore, the width of this branch 205 can be set to optimum value as required, thereby guarantees the repairerment effect of the pixel cell of this liquid crystal indicator 20.Further, these liquid crystal indicator 20 application setting are used to connect the patch cord of the branch of thin film transistor (TFT) source electrode 207 as this data line in the both sides of this sweep trace 202.Need not form a plurality of branches in the intersection of data line 201 and sweep trace 202, thereby increase the aperture opening ratio of this liquid crystal indicator 20.
See also Fig. 6, Fig. 6 is the synoptic diagram of dot structure of the liquid crystal indicator of second embodiment of the present invention.The structural similarity of the liquid crystal indicator 20 of this liquid crystal indicator 30 and first embodiment; Difference is; The U-shaped opening direction of the source electrode 307 of the thin film transistor (TFT) of pixel cell is vertical with the bearing of trend of sweep trace 302, thereby reduces the drain electrode 308 of this thin film transistor (TFT) and the stray capacitance between this sweep trace 302.The U-shaped opening direction of the source electrode 307 of this thin film transistor (TFT) and the angle between the sweep trace 302 also can be between 0 to 90, as long as can reduce the drain electrode 308 of this thin film transistor (TFT) and the stray capacitance between this sweep trace 302.
See also Fig. 7, Fig. 7 is the synoptic diagram of dot structure of the liquid crystal indicator of the 3rd embodiment of the present invention.The structural similarity of the liquid crystal indicator 20 of this liquid crystal indicator 40 and first embodiment; Difference is; This liquid crystal indicator 40 also comprises a metal level 415, and this metal level 415 is arranged at the surface of data line 401 of the infall of data line 401 and sweep trace 402.This metal level 415 contacts with this data line 401 via the contact hole 416 of the infall both sides that are arranged at this data line 401 and this sweep trace 402.Preferably, the material of this metal level 415 is tin indium oxide (ITO) or indium zinc oxide (IZO).
See also Fig. 8, Fig. 8 is the reparation synoptic diagram of the dot structure of liquid crystal indicator shown in Figure 7.When this data line 401 opening circuit with the intersection of this sweep trace 402 or this data line 201 when opening circuit in the both sides 410 of this intersection, do not need any reparing process, the electric current on this data line 401 passes through this metal level 415 and strides across this trip point.When the intersection of this data line 401 and this sweep trace 402 is short-circuited; Adopt suitable radium-shine ablation energy that the both sides 410 of this data line 201 in this intersection are cut off; Electric current on this data line 401 strides across this short dot through this metal level 415, thereby has reduced the ratio of the fraction defective of this liquid crystal indicator 40.Certainly, the liquid crystal indicator 40 of this embodiment also can adopt the restorative procedure of the liquid crystal indicator 20 of first embodiment.
See also Fig. 9, Fig. 9 is the synoptic diagram of dot structure of the liquid crystal indicator of the 4th embodiment of the present invention.The structural similarity of the liquid crystal indicator 40 of this liquid crystal indicator 50 and the 3rd embodiment; Difference is; Position at the contact hole 516 of 501 of metal level 515 and data lines; These data line 501 width widen, this contact hole 516 is also correspondingly widened simultaneously, and is excessive and cause the problem of signal bias with the less contact resistance that causes of these contact hole 516 contacts area to solve this data line 504.Preferably, this data line 501 part 517 of widening is square or is circular or oval.The repair mode of the liquid crystal indicator 50 of this embodiment is similar with the repair mode of the liquid crystal indicator 40 of the 3rd embodiment.
See also Figure 10, Figure 10 is the synoptic diagram of dot structure of the liquid crystal indicator of the 5th embodiment of the present invention.The structural similarity of the liquid crystal indicator 40 of this liquid crystal indicator 60 and the 3rd embodiment, difference be, metal level 615 also is arranged at the surface of source electrode 607 of branch 605 and the thin film transistor (TFT) of data line 601.In the intersection of this data line 601 and sweep trace 602, when the source electrode 607 of the branch 605 of this data line 601 and thin film transistor (TFT) opens circuit, do not need any reparation, this liquid crystal indicator 60 still can operate as normal, and is shown in figure 11.When this data line 601 and the intersection of sweep trace 602 is short-circuited or the branch 605 of this data line 601 between be short-circuited or two side arms of the source electrode of thin film transistor (TFT) between when being short-circuited; Only need carry out suitable cutting, this liquid crystal indicator 60 still can operate as normal.
See also Figure 12, Figure 12 is the synoptic diagram of dot structure of the liquid crystal indicator of the 6th embodiment of the present invention.The structural similarity of the liquid crystal indicator 60 of this liquid crystal indicator 70 and the 5th embodiment, difference are that the contact hole 716 between data line 701 and the metal level 715 is thin-and-long, thereby the area that increases this contact hole 716 reduces contact resistance.The repair mode of the liquid crystal indicator 70 of this embodiment is similar with the repair mode of the liquid crystal indicator 60 of the 5th embodiment.
See also Figure 13, Figure 13 is the synoptic diagram of dot structure of the liquid crystal indicator of the 7th embodiment of the present invention.The structural similarity of the liquid crystal indicator 80 of this embodiment and the liquid crystal indicator 20 of first embodiment; Difference is; Data line 801 also comprises the branch 818 that is arranged at this data line 801 and sweep trace 802 infalls, and this branch 818 and this sweep trace 802 are superimposed and be connected with the source electrode 807 of this thin film transistor (TFT).
See also Figure 14, Figure 14 is the synoptic diagram of dot structure of the liquid crystal indicator of the 8th embodiment of the present invention.The structural similarity of the liquid crystal indicator 90 of this embodiment and the liquid crystal indicator 80 of the 7th embodiment; Difference is; This liquid crystal indicator 90 also comprises a metal level 915, and this metal level 915 is arranged at the surface of source electrode of surface and thin film transistor (TFT) of branch of surface, this data line of data line of the infall of data line and sweep trace.This metal level 915 contacts with this data line via the contact hole of the infall both sides that are arranged at this data line and this sweep trace.Preferably, the material of this metal level 915 is tin indium oxide (ITO) or indium zinc oxide (IZO).
See also Figure 15, Figure 15 is the synoptic diagram of dot structure of the liquid crystal indicator of the 9th embodiment of the present invention.The structural similarity of the liquid crystal indicator 100 of this embodiment and the liquid crystal indicator 90 of the 8th embodiment, difference are that metal level 105 directly contacts with data line 101.
See also Figure 16, Figure 16 is the synoptic diagram of dot structure of the liquid crystal indicator of the tenth embodiment of the present invention.The structural similarity of the liquid crystal indicator 110 of this embodiment and the liquid crystal indicator 20 of first embodiment; Difference is; The source electrode 117 of thin film transistor (TFT) is elongated; The source electrode 117 of this thin film transistor (TFT) is connected with this data line 111 through the branch 115 of data line 111, and it is regional superimposed that the zone at source electrode 117 places of this thin film transistor (TFT) and sweep trace 112 belong to, and the liquid crystal indicator 110 of this embodiment can further improve aperture opening ratio.The repair mode of the liquid crystal indicator 110 of this embodiment is similar with the repair mode of the liquid crystal indicator 20 of first embodiment.
Under situation without departing from the spirit and scope of the present invention, can also constitute many very embodiment of big difference that have.Should be appreciated that except like enclosed claim limited, the invention is not restricted at the specific embodiment described in the instructions.
Claims (19)
1. liquid crystal indicator; The data line that comprises sweep trace, intersects with this sweep trace and by the pixel cell of this sweep trace and data line definition; This pixel cell comprises thin film transistor (TFT) and pixel electrode, and this thin film transistor (TFT) comprises grid, source electrode and drain electrode, it is characterized in that; This data line comprises at least two branches that are arranged at these sweep trace both sides and in this pixel cell, extend; The grid of this thin film transistor (TFT) connects this sweep trace, and the drain electrode of this thin film transistor (TFT) connects this pixel electrode, and the source electrode of this thin film transistor (TFT) connects this data line via said at least two branches of this data line.
2. liquid crystal indicator as claimed in claim 1 is characterized in that: the source electrode of this thin film transistor (TFT) takes the shape of the letter U, and the drain electrode of this thin film transistor (TFT) is arranged in the U-shaped opening of this source electrode.
3. liquid crystal indicator as claimed in claim 2 is characterized in that: the U-shaped opening direction of the source electrode of this thin film transistor (TFT) is parallel with the bearing of trend of this sweep trace.
4. liquid crystal indicator as claimed in claim 3 is characterized in that: two side arms of the U-shaped source electrode of this thin film transistor (TFT) are arranged at the both sides of this sweep trace, and these two side arms are connected with this data line via the branch that is arranged at these sweep trace both sides respectively.
5. liquid crystal indicator as claimed in claim 2 is characterized in that: the U-shaped opening direction of the source electrode of this thin film transistor (TFT) is vertical with the bearing of trend of this sweep trace.
6. liquid crystal indicator as claimed in claim 1 is characterized in that: the source electrode of this thin film transistor (TFT) is elongated, and it is regional superimposed that the zone at the source electrode place of this thin film transistor (TFT) and this sweep trace belong to.
7. like any described liquid crystal indicator in the claim 1 to 4, it is characterized in that: this liquid crystal indicator also comprises a metal level, and this metal level is arranged at the surface of this data line of the infall of this data line and this sweep trace.
8. liquid crystal indicator as claimed in claim 7 is characterized in that: this metal level also is arranged at the surface of source electrode of branch and this thin film transistor (TFT) of this data line.
9. liquid crystal indicator as claimed in claim 7 is characterized in that: this metal level contacts with this data line via the contact hole of the infall both sides that are arranged at this data line and this sweep trace.
10. liquid crystal indicator as claimed in claim 9 is characterized in that: this contact hole is thin-and-long.
11. liquid crystal indicator as claimed in claim 9 is characterized in that: in the position of this contact hole, the width widen of this data line.
12. liquid crystal indicator as claimed in claim 11 is characterized in that: in the position of this contact hole, the place of widening of this data line is square perhaps circular or oval.
13. liquid crystal indicator as claimed in claim 7 is characterized in that: this metal level directly contacts with this data line.
14. liquid crystal indicator as claimed in claim 7 is characterized in that: the material of this metal level is tin indium oxide or indium zinc oxide.
15. like any described liquid crystal indicator in the claim 1 to 6, it is characterized in that: at least two branches of this data line, this data line and the zone that source electrode enclosed of this thin film transistor (TFT) form perforate.
16. like any described liquid crystal indicator in the claim 1 to 4, it is characterized in that: in this pixel cell, this sweep trace is bending, stagger in the zone at the drain electrode place of this sweep trace and this thin film transistor (TFT).
17. like any described liquid crystal indicator in the claim 1 to 6, it is characterized in that: in this pixel cell, the area part at the zone at this thin film transistor (TFT) place and this sweep trace place is overlapping.
18. like any described liquid crystal indicator in the claim 1 to 4, it is characterized in that: this data line also comprises the branch that is arranged at this data line and sweep trace infall, this branch is superimposed with this sweep trace and be connected with the source electrode of this thin film transistor (TFT).
19. like any described liquid crystal indicator in the claim 1 to 6, it is characterized in that: the grid of this thin film transistor (TFT) is partly formed by the broadening of this sweep trace in this pixel cell.
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| Application Number | Priority Date | Filing Date | Title |
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| CN200910198135A CN102053430B (en) | 2009-11-03 | 2009-11-03 | Liquid crystal display device having a plurality of pixel electrodes |
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| Application Number | Priority Date | Filing Date | Title |
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| CN200910198135A CN102053430B (en) | 2009-11-03 | 2009-11-03 | Liquid crystal display device having a plurality of pixel electrodes |
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| CN102053430A CN102053430A (en) | 2011-05-11 |
| CN102053430B true CN102053430B (en) | 2012-10-17 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102759833B (en) * | 2012-07-27 | 2015-05-20 | 京东方科技集团股份有限公司 | Array substrate and display device |
| CN102998869B (en) * | 2012-12-14 | 2015-11-11 | 京东方科技集团股份有限公司 | Thin-film transistor array base-plate and preparation method thereof, display device |
| CN106483724A (en) * | 2015-08-28 | 2017-03-08 | 群创光电股份有限公司 | Display device |
| TWI564644B (en) | 2015-08-28 | 2017-01-01 | 群創光電股份有限公司 | Display device |
| CN108962980B (en) * | 2018-06-29 | 2021-07-09 | 云谷（固安）科技有限公司 | Flexible panel and device with display panel |
| CN111710301A (en) * | 2020-07-13 | 2020-09-25 | 京东方科技集团股份有限公司 | Display panel, preparation method and repair method thereof, and display device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1782826A (en) * | 2004-12-02 | 2006-06-07 | 群康科技(深圳)有限公司 | Liquid crystal display |
| CN101144946A (en) * | 2007-10-18 | 2008-03-19 | 上海广电光电子有限公司 | Liquid crystal display TFT substrate easy for rehabilitating crosspoint short circuit |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1782826A (en) * | 2004-12-02 | 2006-06-07 | 群康科技(深圳)有限公司 | Liquid crystal display |
| CN101144946A (en) * | 2007-10-18 | 2008-03-19 | 上海广电光电子有限公司 | Liquid crystal display TFT substrate easy for rehabilitating crosspoint short circuit |
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