CN101969044A - Pixel structure repairing method, repaired pixel structure and pixel array - Google Patents
Pixel structure repairing method, repaired pixel structure and pixel array Download PDFInfo
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- CN101969044A CN101969044A CN 201010267630 CN201010267630A CN101969044A CN 101969044 A CN101969044 A CN 101969044A CN 201010267630 CN201010267630 CN 201010267630 CN 201010267630 A CN201010267630 A CN 201010267630A CN 101969044 A CN101969044 A CN 101969044A
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- element structure
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Abstract
The invention relates to a pixel structure repairing method. The method comprises the step of providing a pixel structure located on a substrate, wherein the pixel structure comprises scan lines, data lines, an active assembly, an insulating layer and a pixel electrode, and the scan lines and the data lines are located on the substrate; the active assembly is located on the substrate and is electrically connected with the scan lines and the data lines; the insulating layer covers the active assembly, the scan lines and the data lines, and the insulating layer is provided with a contact window opening; and the pixel electrode is located on the insulating layer, and the pixel electrode is filled in the contact window opening so as to be electrically connected with the active assembly. The method also comprises the following step of: removing the pixel electrode located in the contact window opening by performing a laser removal program so that the pixel electrode and the active assembly are electrically insulated. The invention also discloses a repaired pixel structure and a repaired pixel array.
Description
[technical field]
The invention relates to a kind of method for repairing and mending of image element structure, image element structure and picture element array after repairing, and image element structure and the picture element array relevant for a kind of method for repairing and mending of image element structure of LCD, after repairing particularly.
[background technology]
LCD mainly is made of plurality of groups of substrates of thin-film transistor, colorized optical filtering multiple substrate and liquid crystal layer, wherein plurality of groups of substrates of thin-film transistor is made of the image element structure that a plurality of arrays are arranged, and each image element structure is made up of thin-film transistor, pixel electrode (pixel electrode) and reservior capacitor (storage capacitor).When in the image element structure because of particle or dielectric layer broken hole take place when electrically unusual, this image element structure just can become a flaw (dot defect).In general, if can above-mentioned some flaw be repaired into dim spot, just can not need to scrap and abandon these display panels defective by repairing method.
In the prior art, the repairing method of the image element structure of display panels normally adopts the collocation of laser welding (laser welding) and laser cutting (laser cutting) to carry out.Yet the dim spotization that tradition is carried out image element structure by laser welding and laser cutting mode need be carried out many places cutting and many places welding, thus the repairing method of this kind dim spotization comparatively complexity and cost are higher.
[summary of the invention]
The invention provides a kind of method for repairing and mending of image element structure, it can promptly reach purpose with flaw picture element dim spotization by simple repairing method.
The invention provides image element structure and picture element array after a kind of repair, it is to utilize formed image element structure of above-mentioned repairing method and picture element array.
The present invention proposes a kind of method for repairing and mending of image element structure, and the method comprises provides the image element structure that is positioned on the substrate, this image element structure to comprise scan line and data wire, driving component, insulating barrier and pixel electrode.Scan line and data line bit are on substrate.Driving component is positioned on the substrate and with scan line and data wire and electrically connects.Insulating barrier covers driving component, scan line and data wire, wherein has contact window in the insulating barrier.Pixel electrode is positioned on the insulating barrier, and wherein pixel electrode is inserted in the contact window to electrically connect with driving component.Then, carry out laser and remove program, to remove at least partly pixel electrode that is positioned at contact window, so that pixel electrode and driving component are electrically insulated.
The present invention proposes the image element structure after a kind of the repairing, and it comprises scan line and data wire, driving component, insulating barrier and pixel electrode.Scan line and data line bit are on substrate.Driving component is positioned on the substrate and with scan line and data wire and electrically connects.Insulating barrier covers driving component, scan line and data wire, wherein has contact window in the insulating barrier.Pixel electrode is positioned on the insulating barrier, wherein pixel electrode do not cover contact window the bottom so that pixel electrode and driving component be electrically insulated.
The present invention proposes a kind of picture element array, and it comprises a plurality of first image element structures and at least one second image element structure.Each first image element structure comprises first scan line and first data wire, first driving component, insulating barrier and first pixel electrode.Second image element structure comprises second scan line and second data wire, second driving component, insulating barrier and second pixel electrode.First scan line and first data line bit are on substrate.First driving component is positioned on the substrate and with first scan line and first data wire and electrically connects.Insulating barrier covers first driving component, first scan line and first data wire, wherein has first contact window in the insulating barrier.First pixel electrode is positioned on the insulating barrier, and wherein first pixel electrode is inserted in first contact window to electrically connect with first driving component.Second scan line and second data line bit are on substrate.Second driving component is positioned on the substrate and with second scan line and second data wire and electrically connects.Insulating barrier covers second driving component, second scan line and second data wire, wherein has second contact window in the insulating barrier.Second pixel electrode is positioned on the insulating barrier, wherein second pixel electrode do not cover second contact window the bottom so that second pixel electrode and second driving component be electrically insulated.
Based on above-mentioned, the present invention utilizes laser to remove program to remove the pixel electrode that is positioned at contact window, so that pixel electrode and driving component be electrically insulated, and then makes this image element structure dim spotization.Remove the pixel electrode that is positioned at contact window and can reach flaw image element structure dim spotization because the present invention only needs to remove program by laser, therefore method for repairing and mending of the present invention is comparatively easy compared to traditional picture element mending method.
For above-mentioned feature and advantage of the present invention can be become apparent, embodiment cited below particularly, and cooperate appended graphic being described in detail below.
[description of drawings]
Figure 1A to Figure 1B is the schematic diagram of the method for repairing and mending of image element structure according to an embodiment of the invention.
Fig. 2 A is along the generalized section of hatching A-A ' among Figure 1A.
Fig. 2 B is along the generalized section of hatching A-A ' among Figure 1B.
Fig. 3 is the generalized section of the image element structure after repairing according to another embodiment of the present invention.
Fig. 4 be after repairing according to another embodiment of the present invention image element structure on look schematic diagram
Fig. 5 is the schematic diagram of picture element array according to an embodiment of the invention.
[primary clustering symbol description]
100: substrate
101a: front surface
101b: rear surface
102: gate insulator
104,108: protective layer
106: flatness layer/chromatic filter layer
110: insulating barrier
SL, SL1～SL3: scan line
DL, DL1～DL5: data wire
T, T1, T2: driving component
GT, G1, G2: grid
CH, CH1, CH2: channel
S, S1, S2: source electrode
D, D1, D2: drain electrode
PE, PE1, PE2: pixel electrode
C, C1, C2: contact window
B: bottom
W: side surface
R: opening
L: laser removes program
CL: shared electrode
[embodiment]
Method for repairing and mending proposed by the invention is to repair to reach the purpose with flaw picture element dim spotization at the image element structure with flaw.And above-mentioned flaw may be dust granules, dielectric layer broken hole or other flaw and cause this image element structure can't normal operation.Therefore, following method for repairing and mending is to carry out at the image element structure with flaw.
Figure 1A to Figure 1B is the schematic diagram of the method for repairing and mending of image element structure according to an embodiment of the invention.Fig. 2 A is along the generalized section of hatching A-A ' among Figure 1A.Fig. 2 B is along the generalized section of hatching A-A ' among Figure 1B.Please refer to Figure 1A and Fig. 2 A, the image element structure shown in Figure 1A at first is provided, this image element structure is the image element structure with flaw.This image element structure comprises scan line SL and data wire DL, driving component T, insulating barrier 106 and the pixel electrode PE that is configured on the substrate 100.
The material of substrate 100 can be glass, quartz, organic polymer or light tight/reflecting material (for example: electric conducting material, wafer, pottery or other material applicatory) or other material applicatory.
Scan line SL and data wire DL are positioned on the substrate 100.Scan line SL and data wire DL setting interlaced with each other.In other words, the bearing of trend of the bearing of trend of data wire DL and scan line SL is not parallel, and preferably, the bearing of trend of data wire DL is vertical substantially with the bearing of trend of scan line SL.In addition, in present embodiment, scan line SL belongs to different retes with data wire DL.Based on considering of conductivity, scan line SL and data wire DL generally are to use metal material.So, the invention is not restricted to this, according to other embodiment, scan line SL and data wire DL also can use other electric conducting material, for example: the nitrogen oxide of the nitride of alloy, metal material, the oxide of metal material, metal material or the stack layer of metal material and other electric conducting material.
Driving component T is positioned on the substrate 100 and with scan line SL and data wire DL and electrically connects.According to present embodiment, driving component T comprises grid G, channel CH, source S and drain D.Grid G and scan line SL electrically connect.Channel CH is positioned at the top of grid G.Source S and drain D are positioned at the top of channel CH, and source S and data wire DL electric connection.In the present embodiment, include a layer insulating 102 between grid G and channel CH, it can be described as gate insulator again.The material of insulating barrier 102 for example is the stack layer of silica, silicon nitride, silicon oxynitride or above-mentioned at least two kinds of materials.Above-mentioned driving component T is to be that example illustrates with the bottom grid film transistor, but the invention is not restricted to this.According to other embodiment, above-mentioned driving component T is also with the top grid type thin-film transistor.
Insulating barrier 110 covers driving component T, scan line SL and data wire DL, wherein has contact window C in the insulating barrier 110.At this, contact window C exposes the drain D of driving component T.In the present embodiment, insulating barrier 110 comprises insulating barrier 104,106,108, and insulating barrier 104 can be described as protective layer again, and its material for example is the stack layer of silica, silicon nitride, silicon oxynitride or above-mentioned at least two kinds of materials.Insulating barrier 106 can be flatness layer or chromatic filter layer.If insulating barrier 106 is a flatness layer, but its material inorganic insulating material, organic material insulation material or above-mentioned combination.If insulating barrier 106 is a chromatic filter layer, its material can be red filter, green filter or blue filter.Insulating barrier 108 is also as protective layer, and its material for example is the stack layer of silica, silicon nitride, silicon oxynitride or above-mentioned at least two kinds of materials.
What deserves to be mentioned is that though the insulating barrier 110 of present embodiment is made of protective layer 104, flatness layer/chromatic filter layer 106 and protective layer 108, the present invention does not limit the number of plies of the insulating barrier 110 that covers on the driving component T.In other words, according to other embodiment, insulating barrier 110 can be merely a protective layer 104.According to another embodiment, the insulating barrier 110 that covers on the driving component T can be protective layer 104 and flatness layer 106.According to another embodiment, the insulating barrier 110 that covers on the driving component T can be chromatic filter layer 106 and protective layer 108.
Pixel electrode PE is positioned on the insulating barrier 110, and pixel electrode PE inserts among the contact window C with the drain D with driving component T and electrically connects.Above-mentioned pixel electrode PE can be transparent pixel electrode, reflection pixel electrode or transparent pixel electrode and the combination of reflecting pixel electrode.The material of transparent pixel electrode comprises metal oxide, for example is indium tin oxide, indium-zinc oxide, aluminium tin-oxide, aluminium zinc oxide, indium germanium zinc oxide or the above-mentioned stack layer of the two at least.The material of reflection pixel electrode comprises the metal material with highly reflective.
Then, shown in Fig. 2 A, carry out laser and remove program L, be positioned at the pixel electrode PE that contact hole is opened C, so that pixel electrode PE and driving component T be electrically insulated, shown in Figure 1B and Fig. 2 B to remove.In the present embodiment, carry out laser and remove program L afterwards promptly in the middle formation opening R of pixel electrode PE, its split shed R exposes contact window C.
In the present embodiment, to remove the employed optical maser wavelength of program L be 266nm ~ 1064nm to described laser.In addition, according to present embodiment, described laser removes program L to be undertaken by the place ahead of substrate 100.More specifically, substrate 100 has front surface 101a and rear surface 101b, and above-mentioned image element structure (shown in Figure 1A) is to be positioned on the front surface 101a of substrate 100.And above-mentioned laser removes the laser beam of program L is top directive image element structure from the front surface 101a of substrate 100.Described laser removes program L and can make this laser remove program to be not easy the residue particle and to produce to remove the pixel electrode PE in the contact window C, to use by controlling laser energy accurately, and can not cause damage to insulating barrier 110.
Repair image element structure afterwards shown in Figure 1B and Fig. 2 B with the method for above-mentioned Figure 1A to Figure 1B.Image element structure after the described repairing comprises scan line SL and data wire DL, driving component T, insulating barrier 110 and pixel electrode PE.Scan line SL and data wire DL are positioned on the substrate 100.Driving component T is positioned on the substrate 100 and with scan line SL and data wire DL and electrically connects.Insulating barrier 110 covers driving component T, scan line SL and data wire DL, and has contact window C in the insulating barrier 110.Pixel electrode PE is positioned on the insulating barrier 110, and pixel electrode PE do not cover bottom B, the side surface W of contact window C and the outer peripheral areas of contact window C, so that pixel electrode PE and driving component T are electrically insulated.In another embodiment, pixel electrode PE does not cover bottom B and the side surface W of contact window C.
Therefore in the above-described embodiment, laser removes program L and removes all pixel electrode PE that are positioned at contact window C, is carrying out after laser removes program L, and pixel electrode PE does not insert in the contact window C.In other words, carrying out after laser removes program L, shown in Fig. 2 B, bottom B and the side surface W of contact window C are exposed and are not covered by pixel electrode PE.So, the invention is not restricted to this.According to another embodiment of the present invention, laser removes the pixel electrode PE that program L also can only remove the bottom that is positioned at contact window C, so that pixel electrode PE and driving component T be electrically insulated, as shown in Figure 3.
Fig. 3 is the generalized section of the image element structure after repairing according to another embodiment of the present invention.The embodiment of Fig. 3 is similar to the embodiment of Fig. 2 B, and therefore identical with the embodiment of Fig. 2 B assembly is with identical symbolic representation, and no longer repeats to give unnecessary details.The embodiment of the embodiment of Fig. 3 and Fig. 2 B is different be in, it is the pixel electrode PE that removes the bottom B that is positioned at contact window C that laser removes program.Therefore, pixel electrode PE is the side surface W that partly covers contact window C after laser removes program.
What deserves to be mentioned is that the present invention removes the pixel electrode that program removes the drain electrode top that is positioned at driving component by laser, so that driving component and pixel electrode are electrically insulated, uses the purpose that reaches flaw image element structure dim spotization.Therefore, the image element structure of the foregoing description only is used to illustrate the present invention, but is not in order to limit the present invention.
In other words, the present invention does not limit the distribution form of image element structure.For example, according to an embodiment, the drain electrode of the driving component of image element structure can also extend to the middle position of image element structure, as shown in Figure 4.In the image element structure of Fig. 4, drain D is the middle position that extends to image element structure, so contact window C is the central authorities that are arranged at image element structure.In addition, according to this embodiment, image element structure also can comprise shared electrode CL.In pixel electrode PE, also comprise and be provided with orientation slit or orientation projection.Particularly, in the image element structure after this repairs, the opening R among the pixel electrode PE exposes contact window C, so pixel electrode PE and drain D are electrically insulated.
Fig. 5 is the schematic diagram of picture element array according to an embodiment of the invention.Please refer to Fig. 5, the picture element array is made of a plurality of image element structure, and has the image element structure U2 after a plurality of normal image element structure U1 and at least one repairing in this picture element array.In other words, in the picture element array that present embodiment proposed, most image element structure U1 is normal image element structure.And (at least one) image element structure U2 of small part repairs back (dim spotization) image element structure afterwards, and it can be as Figure 1B (Fig. 2 B), Fig. 3 or image element structure shown in Figure 4.Being described in detail as follows of the picture element array of relevant present embodiment.
Please refer to Fig. 5, this picture element array comprises scan line SL1～SL3 and data wire DL1 ~ DL5, driving component T1, T2, insulating barrier and pixel electrode PE1, PE2.In the image element structure of this picture element array, the assembly identical with Fig. 2 A-2B with above-mentioned Figure 1A-1B represented with similar sign.
Scan line SL1～SL3 and data wire DL1 ~ DL5 setting interlaced with each other.In other words, the bearing of trend of the bearing of trend of data wire DL1 ~ DL5 and scan line SL1～SL3 is not parallel, and preferably, the bearing of trend of data wire DL1 ~ DL5 is vertical substantially with the bearing of trend of scan line SL1～SL3.In addition, scan line SL1～SL3 and data wire DL1 ~ DL5 belong to different retes.In addition, described scan line of embodiment and the data wire of the material of scan line SL1～SL3 and data wire DL1 ~ DL5 and above-mentioned Figure 1A and Figure 1B are same or similar.
For normal image element structure U1, it comprises driving component T1 and pixel electrode PE1.Driving component T1 and scan line SL1～SL3 one an and data wire DL1 ~ DL5 wherein electric connection wherein.Driving component T1 comprises grid G 1, channel CH1, source S 1 and drain D 1.With the image element structure U1 that Fig. 5 was indicated is example, and grid G 1 electrically connects with scan line SL1.Channel CH1 is positioned at the top of grid G 1.Source S 1 and drain D 1 are positioned at the top of channel CH1, and source S 1 electrically connects with data wire DL3.Pixel electrode PE1 and driving component T1 electrically connect.
For the image element structure U2 that repairs back (dim spotization), it comprises driving component T2 and pixel electrode PE2.Driving component T2 and scan line SL1～SL3 one an and data wire DL1 ~ DL5 wherein electric connection wherein.Driving component T2 comprises grid G 2, channel CH2, source S 2 and drain D 1.With the image element structure U2 that Fig. 5 was indicated is example, and grid G 2 electrically connects with scan line SL1.Channel CH2 is positioned at the top of grid G 2.Source S 2 and drain D 2 are positioned at the top of channel CH2, and source S 2 electrically connects with data wire DL1.Pixel electrode PE2 and driving component T2 electrically connect.
Similarly, in the present embodiment, at driving component T1, the grid G 1 of T2, G2 and channel CH1 include a layer insulating (insulating barrier 102 shown in Fig. 2 A and Fig. 2 B) between the CH2, and it can be described as gate insulator again.Above-mentioned driving component T1, T2 are to be that example illustrates with the bottom grid film transistor, but the invention is not restricted to this.According to other embodiment, above-mentioned driving component T1, T2 are also with the top grid type thin-film transistor.
More be provided with insulating barrier (insulating barrier 110 shown in Fig. 2 A and Fig. 2 B) between pixel electrode PE1 and the driving component T1 and between pixel electrode PE2 and driving component T2.Particularly, have contact window C1 in the insulating barrier of normal image element structure U1, it exposes the drain D 1 of driving component T1, and wherein pixel electrode PE1 inserts among the contact window C1 and electrically connects with the drain D 1 with driving component T1.Have contact window C2 in the insulating barrier of image element structure U2 after repairing, it exposes the drain D 2 of driving component T2, and wherein pixel electrode PE2 does not cover the bottom of contact window C2, so that pixel electrode PE2 and driving component T2 are electrically insulated.
Similarly, at the image element structure U2 after repairing, its pixel electrode PE2 does not insert among the contact window C2 fully so that pixel electrode PE2 and driving component T2 are electrically insulated (shown in Figure 1B and Fig. 2 B).Or pixel electrode PE2 does not cover the bottom of contact window C2 but partly covers the side surface of contact window C2, so that pixel electrode PE2 and driving component T2 are electrically insulated (as shown in Figure 3).
In sum, the present invention utilizes laser to remove the pixel electrode that program removes the contact window that is positioned at image element structure, so that pixel electrode and driving component be electrically insulated, and then makes flaw image element structure dim spotization.Remove the pixel electrode that is positioned at contact window and can reach flaw image element structure dim spotization because the present invention only needs to remove program by laser, therefore method for repairing and mending of the present invention is comparatively easy compared to traditional picture element mending method.
In addition, method for repairing and mending of the present invention can make this laser remove program to be not easy the residue particle and to produce to remove the pixel electrode in the contact window, to use by controlling laser energy accurately, and can not cause damage to the insulating barrier that is positioned under the pixel electrode.
Though the present invention discloses as above with embodiment; right its is not in order to limit the present invention; have in the technical field under any and know the knowledgeable usually; without departing from the spirit and scope of the present invention; when doing a little change and retouching, so protection scope of the present invention is as the criterion when looking accompanying the claim person of defining.
Claims (15)
1. the method for repairing and mending of an image element structure comprises:
One image element structure is provided, and it is positioned on the substrate, and wherein this image element structure comprises:
An one scan line and a data wire are positioned on this substrate;
One driving component is positioned on this substrate, and electrically connects with this scan line and this data wire;
One insulating barrier covers this driving component, this scan line and this data wire, wherein has a contact window in this insulating barrier;
One pixel electrode is positioned on this insulating barrier, and wherein this pixel electrode is inserted in this contact window to electrically connect with this driving component; And
Carry out a laser and remove program, to remove at least partly this pixel electrode that is positioned at this contact window, so that this pixel electrode and this driving component are electrically insulated.
2. the method for repairing and mending of image element structure according to claim 1 is characterized in that, it is 266nm ~ 1064nm that this laser removes the employed optical maser wavelength of program.
3. the method for repairing and mending of image element structure according to claim 1, it is characterized in that, this substrate has a front surface and a rear surface, and this image element structure is on this front surface of this substrate, and this laser laser beam of removing program is front surface top this image element structure of directive from this substrate.
4. the method for repairing and mending of image element structure according to claim 1 is characterized in that, this insulating barrier comprises:
One chromatic filter layer; And
One protective layer covers this chromatic filter layer.
5. the method for repairing and mending of image element structure according to claim 1 is characterized in that, this driving component has a grid, one source pole and a drain electrode, and this contact window is positioned at going up of this drain electrode and exposes this drain electrode.
6. the image element structure after the repairing comprises:
An one scan line and a data wire are positioned on the substrate;
One driving component is positioned on this substrate, and electrically connects with this scan line and this data wire;
One insulating barrier covers this driving component, this scan line and this data wire, wherein has a contact window in this insulating barrier; And
One pixel electrode is positioned on this insulating barrier, and wherein this pixel electrode does not cover the bottom of this contact window, so that this pixel electrode and this driving component are electrically insulated.
7. the image element structure after the repairing according to claim 6 is characterized in that this pixel electrode is not inserted in this contact window.
8. the image element structure after the repairing according to claim 6 is characterized in that this pixel electrode partly covers the side surface of this contact window.
9. the image element structure after the repairing according to claim 6 is characterized in that, this insulating barrier comprises:
One chromatic filter layer; And
One protective layer covers this chromatic filter layer.
10. the image element structure after the repairing according to claim 6 is characterized in that, this driving component has a grid, one source pole and a drain electrode, and this contact window is positioned at going up of this drain electrode and exposes this drain electrode.
11. a picture element array comprises:
A plurality of first image element structures, each first image element structure comprises:
One first scan line and one first data wire are positioned on this substrate;
One first driving component is positioned on this substrate, and electrically connects with this first scan line and this first data wire;
One insulating barrier covers this first driving component, this first scan line and this first data wire, wherein has one first contact window in this insulating barrier;
One first pixel electrode is positioned on this insulating barrier, and wherein this first pixel electrode is inserted in this first contact window to electrically connect with this first driving component;
At least one second image element structure, this second image element structure comprises:
One second scan line and one second data wire are positioned on this substrate;
One second driving component is positioned on this substrate, and electrically connects with this second scan line and this second data wire;
This insulating barrier covers this second driving component, this second scan line and this second data wire, wherein has one second contact window in this insulating barrier; And
One second pixel electrode is positioned on this insulating barrier, and wherein this second pixel electrode does not cover the bottom of this second contact window, so that this second pixel electrode and this second driving component are electrically insulated.
12. picture element array according to claim 11 is characterized in that, this second pixel electrode is not inserted in this second contact window.
13. picture element array according to claim 11 is characterized in that this second pixel electrode partly covers the side surface of this second contact window.
14. picture element array according to claim 11 is characterized in that, this insulating barrier comprises:
One chromatic filter layer; And
One protective layer covers this chromatic filter layer.
15. picture element array according to claim 11, it is characterized in that, this first driving component has first grid, first source electrode and first drain electrode, this second driving component has second grid, second source electrode and second drain electrode, this first contact window is positioned at going up of this first drain electrode and exposes this first drain electrode, and this second contact window is positioned at going up of this second drain electrode and exposes this second drain electrode.
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| CN 201010267630 CN101969044A (en) | 2010-08-25 | 2010-08-25 | Pixel structure repairing method, repaired pixel structure and pixel array |
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| CN 201010267630 CN101969044A (en) | 2010-08-25 | 2010-08-25 | Pixel structure repairing method, repaired pixel structure and pixel array |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102253510A (en) * | 2011-03-30 | 2011-11-23 | 友达光电股份有限公司 | Repair circuit structure, repair method and liquid crystal display panel |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020063844A1 (en) * | 2000-11-28 | 2002-05-30 | Yoshiaki Matsuura | Method for darkening pixel |
| CN100514166C (en) * | 2006-11-27 | 2009-07-15 | 中华映管股份有限公司 | Pixel structure and its repairing method |
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2010
- 2010-08-25 CN CN 201010267630 patent/CN101969044A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020063844A1 (en) * | 2000-11-28 | 2002-05-30 | Yoshiaki Matsuura | Method for darkening pixel |
| CN100514166C (en) * | 2006-11-27 | 2009-07-15 | 中华映管股份有限公司 | Pixel structure and its repairing method |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102253510A (en) * | 2011-03-30 | 2011-11-23 | 友达光电股份有限公司 | Repair circuit structure, repair method and liquid crystal display panel |
| CN102253510B (en) * | 2011-03-30 | 2014-08-06 | 友达光电股份有限公司 | Repair circuit structure, repair method and liquid crystal display panel |
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Application publication date: 20110209 |