CN100454556C - Repairing structure and active component array substrate - Google Patents

Repairing structure and active component array substrate Download PDF

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Publication number
CN100454556C
CN100454556C CN 200610100236 CN200610100236A CN100454556C CN 100454556 C CN100454556 C CN 100454556C CN 200610100236 CN200610100236 CN 200610100236 CN 200610100236 A CN200610100236 A CN 200610100236A CN 100454556 C CN100454556 C CN 100454556C
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insulating layer
patch
layer
conductor
characterized
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CN 200610100236
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CN1877844A (en )
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吕安序
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友达光电股份有限公司
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Abstract

本发明公开了一种修补结构与主动元件阵列基板,所述修补结构包括至少一第一导线、一第一绝缘层、至少一第二导线以及一修补连接层。 The present invention discloses a structure in the active device array substrate patches, the patch structure comprises at least a first conductor, a first insulating layer, and at least a second conductor layer connected to a patch. 其中,第一绝缘层覆盖第一导线。 Wherein the first insulating layer covers the first wire. 第二导线配置于第一绝缘层上方。 A second conductor disposed above the first insulating layer. 第二绝缘层覆盖第二导线与第一绝缘层。 The second insulating layer covers the first wire and a second insulating layer. 修补连接层配置于第二绝缘层上。 Patch connecting layer is disposed on the second insulating layer. 特别是,修补连接层与第一导线电性连接,且修补连接层与第二导线重叠但彼此不电性连接。 In particular, the connection layer patch is electrically connected to a first wire and a second wire connection layer repair overlap but which are not electrically connected. 依据上述,本发明提出一种可提高修补合格率的修补结构。 According to the above, the present invention provides an improved structural repair patch yield.

Description

修补结构与主动元件阵列基板技术领域本发明是有关于一种修补结构与主动元件阵列基板,特别是有关于一种能提高修补合格率的修补结构与修补合格率较高的主动元件阵列基板。 Patch structure and the active element array substrate Technical Field The present invention relates to a repairing configuration active element array substrate, in particular relates to a structure and can improve the repair patch higher yield of the active element array substrate repair yield. 背景技术虽然目前液晶显示器技术已趋成熟,但液晶显示面板在制造过程中难免会产生一些瑕疵(defect),而这些瑕疯在液晶显示器显示影像时会造成感官上的不适,若直接报废丢弃这些有瑕疵的液晶显示面板,将会使得制造成本大幅增加。 BACKGROUND OF THE INVENTION Although LCD technology has matured, but the liquid crystal display panel will inevitably have some flaws (Defect) during the manufacturing process, which can cause flaws mad sensory discomfort when the liquid crystal display to display an image, when these are discarded, direct defective LCD panel, will make a substantial increase in manufacturing cost. 通常,只依赖改善制造工艺技术来实现零瑕疯率是非常困难的,因此液晶显示面板的瑕疯修补技术变得相当重要。 Typically, it depends only improve the manufacturing process technology to achieve zero defect rate is very difficult to mad, so the liquid crystal display panel repair technique flaw mad become important. 在公知技术中,液晶显示面板的瑕疵修补通常采用激光熔接(laser welding)或激光切割(laser cutting)等方式进行。 In the known art, the liquid crystal display panel repair defects commonly used laser welding (laser welding) or laser cutting (laser cutting) and other ways. 一般而言,液晶显示器主要包括一液晶显示面板与一背光模块。 In general, a liquid crystal display including a liquid crystal display panel and a backlight module. 液晶显示面板主要包括一薄膜晶体管阵列基板与一彩色滤光基板。 The liquid crystal display panel including a thin film transistor array substrate and a color filter substrate. 其中,薄膜晶体管阵列基板在制造的过程中难免会产生一些断线瑕疵。 Wherein the thin film transistor array substrate breakage will inevitably produce some defects in the process of manufacture. 这些断线瑕疵可通过阵列测试(array test)检测出,并可在修补制造工艺中以激光化学气相沉积法(laser chemical vapor deposition, laser CVD)将其修复。 The disconnection defect can be detected by the test array (array test), and in the manufacturing process to repair laser chemical vapor deposition (laser chemical vapor deposition, laser CVD) to repair. 然而并非所有的断线瑕疯都适用激光化学气相沉积法来修补。 However, not all are suitable for laser disconnection flaw mad chemical vapor deposition process to repair. 例如当断线瑕疵是在组成液晶胞(cell)后才检测到的情况。 For example, the case when the disconnection defect is detected in the composition after the liquid crystal cell (cell).

此外,若断线瑕疵是在薄膜晶体管阵列基板与彩色滤光基板(未绘示)组立,并注入液晶(未绘示)后才检测到的,由于断线发生的薄膜晶体管阵列(TF丁array)端已被包覆在整个液晶胞(cell)中,因此并不能用激光化学气相沉积法在断线的上方做修补,为了避免在液晶显示面板(未绘示)上形成亮线,必需通过另外的修补方式,例如是通过薄膜晶体管阵列基板的修补线将液晶显示面板修复。 Further, if the defect is disconnected (not shown) Assembling the color filter substrate in a thin film transistor array substrate, and liquid crystal (not shown) after the detected, disconnection occurs due to the thin film transistor array (TF D array) has been coated on the entire side of the liquid crystal cell (cell), and thus can not make the laser chemical vapor deposition over the patch broken, in order to avoid a display panel (not shown) is formed on the liquid crystal bright line, it is necessary by additional repair methods, for example by a thin film transistor array substrate repair line liquid crystal display panel repair.

图1A绘示公知一种薄膜晶体管阵列基板的结构俯视图,图1B绘示图1A 中沿剖面线AA,的剖面图。 FIG 1A illustrates a known structure of a TFT array substrate in a plan view, FIG. 1B shows a sectional view of FIG. 1A along section line AA, of. 请先参照图1A,薄膜晶体管阵列基板100且具有一基板IIO、多条扫描线120、多条数据线130、多个像素单元140以及一修补线(repairline) 150。 Please 1A, the TFT array substrate 100 and the IIO having a substrate, a plurality of scanning lines 120, a plurality of data lines 130, a plurality of pixel units 140 and the repairing line (repairline) 150. 其中,扫描线120、数据线130、像素单元140以及修补线150皆配置于J^! Wherein the scan lines 120, data lines 130, the pixel unit 140 and the repair line 150 are arranged at J ^! 110上。 110 on. 每一像素单元140包括一薄膜晶体管142以及一铟锡氧化物(indium tin oxide, ITO)电极144。 Each pixel cell 140 includes a transistor 142 and a thin film of indium tin oxide (indium tin oxide, ITO) electrodes 144. 薄膜晶体管142与对应的扫描线120及数据线130电性相连,铟锡氧化物电极144与主动元件140电性相连。 The thin film transistor 142 and the corresponding scan line 120 and data line 130 is electrically connected 140 electrically indium tin oxide electrode 144 and the active element is connected.

在薄膜晶体管阵列基板IOO与一彩色滤光基板对组,并注入液晶之后,一液晶显示面板即可形成。 After the thin film transistor array substrate and a color filter substrate IOO pair group, and injecting liquid crystal, a liquid crystal display panel can be formed. 然而,若发现薄膜晶体管阵列基板100上断线瑕疯时, 就必须通过修补线150进行修补。 However, if the flaw found 100 break mad thin film transistor array substrate, it must be repaired by the repair line 150. 举例而言,当在薄膜晶体管阵列基板IOO上检测到一受损的数据线130时,可分别在熔接点150a与150b以激光熔接修补线150以及受损的数据线130,使受损的数据线130可经由修补线150而恢复大部分的功能。 For example, when detecting a corrupted data lines on the TFT array substrate 130 when the IOO, respectively, at point 150a and 150b welded to the laser welding repair of damaged data line 150 and line 130, so that corrupted data line 130 may restore most of the functionality via repair line 150.

请参照图1B,值得注意的是,在数据线130与修补线150之间还形成有一绝缘层162、 一非晶硅层164以及一掺杂非晶硅层166,在数据线130上还覆盖有一保护层168。 Referring to Figure 1B, is worth noting that, in the data line 130 is formed between the repair line 150 there is a further insulating layer 162, an amorphous silicon layer 164 and a doped amorphous silicon layer 166, on the data line 130 also covers a protective layer 168. 其中,绝缘层162、非晶硅层164以及掺杂非晶硅层166的厚度总合约为3500埃(angstrom, A)至8500埃之间。 Wherein, between the insulating layer 162, an amorphous silicon layer 164 and the doped amorphous silicon layer 166 contracts the total thickness of 3500 Å (angstrom, A) to 8500 Angstroms. 在进行激光熔接以使数据线130与修补线150熔接在一起时,由于数据线130与修补线150之间的膜层厚度总和较大,使激光不易烧穿至修补线150。 During laser welding to the data line 130 and the repair line 150 are welded together, since the sum of the film thickness between the data line 130 and the repair line 150 is large, the laser repair is not easy to burn through line 150. 如此将会导致数据线130与修补线150之间出现接触不良的现象或是数据线130无法与修补线150熔接在一起,进而造成修补合格率降低。 So will cause poor contact phenomenon or the data line 130 can not be welded together with the repair line 150 occurs between the data lines 130 and 150 repair line, thus resulting in reduced repair yield.

发明内容 SUMMARY

有鉴于上述,本发明的目的是提供一种能提高修补合格率的修补结构。 In view of the above, an object of the present invention is to provide a structure repair patch to improve yield. 本发明的另一目的是提供一种修补合格率较高的主动元件阵列基板。 Another object of the present invention to provide an active element array substrate A method for repairing a high yield. 为达上述或是其它目的,本发明提出一种修补结构,此修补结构包括至少 To achieve the above or other objects, the present invention provides a repairing structure, this structure comprising at least patch

一第一导线、 一第一绝缘层、至少一第二导线、 一第二绝缘层以及一修补连接层。 A first conductor, a first insulating layer, at least a second conductor, a second insulating layer and a connection layer patch. 其中,第一绝缘层覆盖第一导线。 Wherein the first insulating layer covers the first wire. 第二导线配置于第一绝缘层上方。 A second conductor disposed above the first insulating layer. 第二绝缘层覆盖第二导线与第一绝缘层。 The second insulating layer covers the first wire and a second insulating layer. 修补连接层配置于第二绝缘层上。 Patch connecting layer is disposed on the second insulating layer. 修补连接层与第一导线电性连接,且修补连接层与第二导线重叠但彼此不电性连接。 Patch connection layer electrically connected to a first wire and a second wire connection layer repair overlap but which are not electrically connected.

依照本发明一实施例所述的修补结构,其中第二绝缘层的厚度介于1500 埃至5000埃之间。 In accordance with the embodiment of the patch structure of an embodiment of the present invention, wherein the thickness of the second insulating layer is between 1500 Angstroms and 5000 Angstroms.

依照本发明一实施例所述,修补结构更包括至少一接触孔,此接触孔贯穿第一绝缘层以及第二绝缘层,而修补连接层部份填入接触孔以电性连接第一导线。 In accordance to an embodiment of the present invention, a repair structure further comprises at least a contact hole, the contact hole passing through the first insulating layer and a second insulating layer, and the patch portion filled contact hole connecting layer electrically connected to the first conductor.

依照本发明一实施例所述,修补结构更包括一半导体层,配置于第一绝缘层与第二导线之间。 In accordance to an embodiment of the present invention, a repair structure further comprises a semiconductor layer disposed between the first insulating layer and the second conductor.

依照本发明一实施例所述的修补结构,其中第二导线部份覆盖于第一导线的上方。 In accordance with the embodiment of the patch structure of an embodiment of the present invention, wherein the second part covers over the first lead wire.

依照本发明一实施例所述的修补结构,其中修补连接层的材质包括铟锡氧4b物(indium tin oxide, ITO )、铟锌氧^:物(indium zinc oxide, IZO)、金属、 合金、上述材质组合其中之一或其它适当材质。 In accordance with the embodiment of the patch structure of an embodiment of the present invention, wherein the repair material of the connecting layer 4b thereof include indium tin oxide (indium tin oxide, ITO), indium zinc oxide ^: composition (indium zinc oxide, IZO), metals, alloys, wherein one of a combination of the above materials or other suitable materials.

本发明另提出一种主动元件阵列基板,此主动元件阵列基板包括一基板、 一像素阵列以及一修补结构。 The present invention further provides an active matrix substrate, the active element array substrate comprising a substrate, a pixel array and a repairing configuration. 其中,基板具有一显示区与一周边电路区。 Wherein the substrate has a display region and a peripheral circuit region. 像素 Pixels

阵列配置于基板上的显示区内。 Array configuration display region on the substrate. 修补结构配置于基板上的周边电路区内,此修补结构与像素阵列电性连接,且包括至少一第一导线、 一第一绝缘层、至少一第二导线、 一第二绝缘层以及一修补连接层。 Patch structure arranged in the peripheral circuit region on the substrate, this patch structure is electrically connected to the pixel array, and comprises at least a first conductor, a first insulating layer, at least a second conductor, a second insulating layer, and a patch connection layer. 第一绝缘层覆盖第一导线。 A first insulating layer covering the first conductor. 第二导线配置于第一绝缘层上方,且与像素阵列电性连接。 A second conductor disposed above the first insulating layer and electrically connected to the pixel array. 第二绝缘层覆盖第二导线与第一绝缘层。 The second insulating layer covers the first wire and a second insulating layer. 修补连接层配置于第二绝缘层上。 Patch connecting layer is disposed on the second insulating layer. 修补连接层与第一导线电性连接,且修补连接层与第二导线重叠但彼此不电性连接。 Patch connection layer electrically connected to a first wire and a second wire connection layer repair overlap but which are not electrically connected.

依照本发明一实施例所述的主动元件阵列基板,其中第二绝缘层的厚度介于1500埃至5000埃之间。 In accordance with the active device array substrate according to an embodiment of the present invention, wherein the thickness of the second insulating layer is between 1500 Angstroms and 5000 Angstroms.

依照本发明一实施所述,主动元件阵列基板更包括至少一接触孔,此接触孔贯穿第一绝缘层以及第二绝缘层,而修补连接层部份填入接触孔以电性连接第一导线。 In accordance with an embodiment of the present invention, the active element array substrate further comprises at least one contact hole, the contact hole passing through the first insulating layer and a second insulating layer, and the patch portion filled contact hole connecting layer electrically connected to a first wire .

依照本发明一实施所述的主动元件阵列基板,其中像素阵列包括多条扫描线、多条数据线、多个主动元件以及多个像素电极,修补结构包括多条第二导线,且这些数据线其中之一分别与修补结构的这些第二导线之一电性连接,而每一主动元件与对应的扫描线以及数据线电性连接,每一像素电极与对应的主动it/f牛电性连接。 In accordance with an embodiment of the data lines of the present invention the active matrix substrate, wherein the pixel array comprises a plurality of scan lines, a plurality of data lines, a plurality of active elements and a plurality of pixel electrodes, a second patch structure comprises a plurality of wires, and wherein one of the electrical conductors, one second patch structure respectively connected to the scanning line corresponding to each active element and a data line electrically connected to each of the corresponding pixel electrode active it / f electrically connected bovine .

依照本发明一实施所述的主动元件阵列基板,修补结构更包括一半导体层, 配置于第一绝缘层与第二导线之间。 In accordance with one embodiment of the active matrix substrate according to the present invention, a repair structure further comprises a semiconductor layer disposed between the first insulating layer and the second conductor.

依照本发明一实施所述的主动元件阵列基板,其中第二导线部份覆盖于第一导线的上方。 In accordance with an embodiment of the present invention, the active element array substrate, wherein the second part covers over the first lead wire.

依照本发明一实施所述的主动元件阵列基板,其中修补连接层的材质包括铟锡氧化物、铟锌氧化物、金属、合金、上述材质组合其中之一或其它适当材质。 In accordance with an embodiment of the present invention, the active element array substrate, wherein the repair material of the connection layer comprises indium tin oxide, indium zinc oxide, a metal, an alloy, wherein one of a combination of the above materials or other suitable materials.

在本发明所提出的修补结构中,修补连接层与第二导线之间只有单一层的第二绝缘层。 In the proposed structure of the patch of the present invention, only a single layer of the second patch insulating layer between the connection layer and the second conductor. 当进行激光修补时,激光可以轻易地烧穿第二绝缘层,使修补连接层与第二导线熔接在一起。 When the laser repair of the laser can easily burn through the second insulating layer, so that patch and the second conductor layer connected welded together. 故在进行激光修补后,不易产生修补失败的情形, Therefore, after performing laser repair, the less likely case of failure repair,

进而使第二导线与第一导线电性相连。 Further the second conductor is electrically connected to the first conductor. 因此,修补结构能提高修补合格率。 Consequently, the patch structure can improve the passing rate of repair. 此外,本发明所提出的主动元件阵列基板上制作有上述的修补结构,此主动元件阵列基板的修补合格率较高。 Further, the above prepared repair on the active element array substrate structure proposed by the present invention, a high yield of this patch active element array substrate.

附图说明 BRIEF DESCRIPTION

图1A绘示公知一种薄膜晶体管阵列基板的结构俯视图。 FIG 1A illustrates a known structure of a TFT array substrate in a plan view.

图1B绘示图1A中沿剖面线AA,的剖面图。 FIG 1B illustrates a cross-sectional view of FIG. 1A along section line AA, of.

图2A绘示本发明一实施例的修补结构的俯视图。 FIG 2A shows a plan view of a repair structure according to the present embodiment of the invention.

图2B绘示图2A的修补结构沿剖面线B-B'的剖面图。 FIG 2B illustrates a cross-sectional view of FIG. 2A along sectional line repair structure B-B 'of.

图2C至图2E绘示不同实施例的修补结构的结构示意图。 FIGS. 2C to 2E repairing a structural schematic diagram of the structure of various embodiments.

图3A绘示本发明一实施例的主动元件阵列基板的俯视图。 FIG 3A illustrates a top view of the present invention, the active element array substrate according to an embodiment.

图3B绘示图3A的主动元件阵列基板沿剖面线CC,的剖面图。 3B, a schematic cross-sectional view of an active element array substrate 3A taken along section line CC, shown in FIG.

附图标记说明: REFERENCE NUMERALS:

100:薄膜晶体管阵列基板 100: thin film transistor array substrate

110、 710:基板 110, 710: substrate

120、 722:扫描线 120, 722: scan line

130、 724:数据线 130, 724: data cable

140:〗象素单元 140: the pixel unit〗

142:薄膜晶体管 142: thin film transistor

144:铟锡氧化物电极 144: indium tin oxide electrode

150:修补线 150: repair line

150a、 150b、 350a、 730a、 730b:熔接点162:绝缘层164:非晶硅层166:摻杂非晶磅层168:保护层 150a, 150b, 350a, 730a, 730b: weld point 162: insulating layer 164: amorphous silicon layer 166: lb-doped amorphous layer 168: protective layer

300、 400、 500、 600、 730:修补结构 300, 400, 500, 600, 730: patch structure

310、 731:第一导线 310, 731: a first wire

320:第一绝缘层 320: a first insulating layer

330:第二导线 330: second wire

340:第二绝缘层 340: The second insulating layer

350:修补连接层 350: connection layer patch

360:半导体层 360: semiconductor layer

700:主动元件阵列基4反 700: anti-active element array substrate 4

710a:显示区710b:周边电路区720:像素阵列726:主动元件728:像素电极 710a: display region 710b: peripheral circuit region 720: a pixel array 726: 728 active elements: a pixel electrode

具体实施方式 detailed description

图2A绘示本发明一实施例的修补结构的俯视图,图2B绘示图2A的修补结构沿剖面线BB,的剖面图。 FIG 2A shows a plan view of a repair structure according to the present embodiment of the invention, FIG 2B shows a sectional view of FIG patch 2A along sectional line BB of the structure, the. 请同时参照图2A与图2B,修补结构300是制作于一基^反110上,此<务补结构300包4舌至少一第一导线310、 一第一绝缘层320、 至少一第二导线330、 一第二绝缘层340以及一修补连接层350。 Referring to FIGS. 2A and 2B, the patch structure 300 is fabricated on a counter-yl ^ 110, the <service package structure 300 patch tongues 4 at least a first conductor 310, a first insulating layer 320, at least a second wire 330, a second insulating layer 340 and connected to a patch layer 350. 其中,第一绝缘层320覆盖第一导线310。 Wherein the first insulating layer 320 covers the first conductive line 310. 第二导线330配置于第一绝缘层320上方。 The second conductor 330 is disposed above the first insulating layer 320. 第二绝缘层340覆盖第二导线330与第一绝缘层320。 The second insulating layer 340 covers the second conductor 330 and the first insulating layer 320. 修补连接层350配置于第二绝缘层340上。 Patch connection layer 350 disposed on the second insulating layer 340. 在一实施例中,修补连接层350部份覆盖于第一导线310与第二导线330的上方。 In one embodiment, the patch covers the connection layer 350 above the first conductor portion 310 and the second conductor 330. 修补连接层350与第一导线310电性连接,且修补连接层350与第二导线330重叠或是相交^#:此不电性连接(亦即修补连接层350与第二导线330彼此电性绝缘)。 A first conductor layer 350 is connected to patch 310 and is electrically connected, and the prosthesis is connected to the second conductor layer 350 overlaps or intersects ^ # 330: This is not electrically connected to (i.e., patch layer 350 and the second connecting wire 330 electrically to each other insulation).

在本实施例中,修补结构更包括至少一接触孔H与一半导体层360。 In the present embodiment, a repair structure further comprises at least a contact hole H and the semiconductor layer 360. 接触孔H贯穿第一绝缘层320以及第二绝缘层340,而修补连接层350部份填入接触孔H以电性连接第一导线310。 A contact hole H penetrating the first insulating layer 320 and the second insulating layer 340, the connection layer 350 and the patch portion filled contact hole H is connected to the first electrically conductive line 310. 半导体层360则配置于第一绝缘层320与第二导线330之间。 The semiconductor layer 360 disposed between the first insulating layer 320 and the second wire 330.

承上述,第一导线310的材质例如为铝、铝合金或其它适当的导电材质。 Bearing the above, material of the first wire 310 is aluminum, aluminum alloy or other suitable conductive material, for example. 第一绝缘层320的材质例如为氮化硅或其它适当的材质。 A first insulating layer 320 made, for example, silicon nitride or other suitable material. 第二导线330的材质例如为铝、铝合金、铬、钬或其它适当的导电材质。 The second conductor 330 is made, for example, aluminum, aluminum alloy, chromium, holmium, or other suitable conductive material. 第二绝缘层340的材质例如为氮化硅或其它适当的材质。 The second insulating layer 340 made, for example, silicon nitride or other suitable material. 此第二绝缘层340的厚度例如介于1500埃至5000埃之间。 The thickness of this second insulating layer 340, for example, between 1500 to 5000 Angstroms. 修补连接层350的材质例如为导电材料或其它适当材质,即修补 Repair material layer 350 is connected, for example, a conductive material or other suitable materials, i.e. patching

连接层350的材质例如为铟锡氧化物(indium tin oxide, ITO)、铟锌氧化物(indium zinc oxide, IZO)、金属、合金、上述材质组合其中之一或其它适当的导电材质。 Material layer 350 is connected, for example, indium tin oxide (indium tin oxide, ITO), indium zinc oxide (indium zinc oxide, IZO), metals, alloys, wherein one of a combination of the above materials or other suitable conductive material. 半导体层360例如包括非晶硅层与掺杂非晶硅层。 The semiconductor layer 360 comprises, for example, an amorphous silicon layer and a doped amorphous silicon layer.

本实施例的修补结构300可被利用于修补多种瑕疯,例如液晶显示面板的断线瑕疯。 Repair structure 300 of the present embodiment may be utilized to repair a variety of flaws crazy, for example, a liquid crystal display panel is broken flaw mad. 其修补的方法是在熔接点350a进行激光熔接,以使修补连接层350 与第二导线330熔接在一起,进而使与第二导线330电性连接的配线恢复大部分功能。 Which repair method is laser welded 350a welding point, so that the patch layer 350 and the second connecting conductor 330 are welded together, and thus the wiring 330 is electrically connected to the second lead recovery most of the functions. 值得注意的是,相较于公知技术的数据线130与修补线150间形成有绝缘层162、非晶硅层164以及掺杂非晶硅层166,修补连接层350与第二导线330之间只有单一层笫二绝缘层340。 It is noted that, compared to the known technique of the repair line 130 and data line 150 is formed with an insulating layer 162, 330 between the amorphous silicon layer 164 and the doped amorphous silicon layer 166, the connection layer 350 and the second patch conductor only a single layer of the insulating layer 340 two great undertaking. 当进行激光修补时,激光可以轻易地烧穿第二绝缘层340,使得修补连接层350与第二导线330熔接在一起。 When the laser repair of the laser can easily burn through the second insulating layer 340, so that the patch layer 350 and the second connecting conductor 330 are welded together. 如此,激光修补后将不容易产生修补失败的情形。 Thus, after the laser repair is not prone to repair the situation failed. 修补完成后的第二导线330即可透过卡务补连"l妾层350而与第一导线310电性连"l妄。 After completion of the second conductor patch 330 can be connected through the card service fill "l concubine layer 350 is electrically connected to the first lead 310 of" l jump. 如此,电性连接第二导线330的配线将可恢复大部分的功能。 Thus, a second conductor electrically connected to the wiring 330 will recover most of the functions. 由以上叙述可知,修补结构300确实能提高修补合格率。 From the above description, 300 repairing structural repair can really enhance the yield.

需注意的是,在本实施例的修补结构300中,第一导线310、第二导线330 以及修补连接层350虽如图2A所绘示的形式,但图2A所绘示的形式仅为本发明的其中一例。 It is noted that, in the patch of the embodiment structure 300 of the present embodiment, the first lead 310, second lead 330, and the patch 2A in the form depicted in FIG although the connection layer 350, but the form depicted in FIG. 2A only present One example of the invention. 图2C至图2E绘示出其它可能实施例的修补结构的结构示意图。 FIGS. 2C to 2E shows a schematic structural diagram of another possible configuration of the patch embodiment. 图2C至图2E所绘示的修补结构400、 500、 600中,第一导线310、第二导线330以及修补连接层350具有不同的形式。 2C-2E patch configuration 400 depicted, 500, 600, a first conductor 310, second conductor layer 330 and a patch 350 having different connection forms. 也需注意的是,上述的修补结构300、 400、 500、 600中,第二导线330未覆盖于第一导线310的上方。 Also should be noted that the above-described repair structure 300, 400, 500, 600, 330 uncovered second conductors above the first conductors 310. 然而,在其它实施例中,第二导线330也可部份覆盖于第一导线310的上方。 However, in other embodiments, the second conductor 330 may also be partially covers over the first conductor 310.

为了说明本发明所提出的修补结构可应用于修补液晶显示面板或主动元件阵列基板的断线瑕疵,以下将提出一主动元件阵列基板进行说明。 To illustrate the proposed structure of the patch of the present invention may be applied to repairing the liquid crystal display panel is broken or defective active element array substrate, the following will present an active device array substrate will be described.

图3A绘示本发明一实施例的主动元件阵列^4反的俯视图,图3B绘示图3A的主动元件阵列i4l沿剖面线CC,的剖面图。 FIG 3A illustrates the present embodiment of the invention, the active element array ^ 4 a plan view of the anti embodiment, FIG 3B shows a sectional view of FIG active element array i4l along section line 3A of the CC, the. 请同时参照图3A与图3B, 主动元件阵列基板700包括一基仗710、 一像素阵列720以及一修补结构730。 Referring to FIGS. 3A and 3B, the active element array substrate 700 comprises a group battle 710, a pixel array 720 and a patch 730 configuration.

其中,M 710具有一显示区710a与一周边电路区710b。 Wherein, M 710 having a display region 710a and a peripheral circuit region 710b. 像素阵列720配置于基板710上的显示区710a内。 710a in the pixel array 720 is disposed on the substrate 710 of the display area. 修补结构730配置于基板710上的周边电路区710b内,此修补结构730与像素阵列720电性连接,且包括至少一第一导线731 、 一第一绝缘层320、至少一第二导线330、 一第二绝缘层340以及一4务补连接层350。 Patch structure 730 is disposed in the peripheral circuit region on the substrate 710 710b, this patch structure 730 is electrically connected to the pixel array 720, and comprises at least a first conductor 731, a first insulating layer 320, at least a second wire 330, a second insulating layer 340, and a connection layer 4 up service 350. 其中,第一导线731、第一绝缘层320、第二导线330、第二绝缘层340 以及修补连接层350的配置关系与上述修补结构300中的各构件的配置关系相同。 Wherein the first lead 731, a first insulating layer 320, a second wire 330, the same positional relationship of each member 340 and the positional relationship between the patch layer 350 and connected to the above-described repair structure 300 in the second insulating layer. 特别得是,第二导线330与像素阵列720电性连接。 In particular it was that the second lead 720 electrically connected to the pixel array 330.

类似于修补结构300,在主动元件阵列基板700中,修补结构730也包括至少一接触孔H与一半导体层360。 Patch 300 is similar to the structure, in the active device array substrate 700, a repair structure 730 also comprises at least one contact hole H and a semiconductor layer 360. 接触孔H贯穿第一绝缘层320以及第二绝缘层340,而修补连接层350部份填入接触孔H以电性连接第一导线731。 A contact hole H penetrating the first insulating layer 320 and the second insulating layer 340, the connection layer 350 and the patch portion filled contact hole H is connected to the first conductor 731 electrically. 半导体层360配置于第一绝缘层320与第二导线330之间。 The semiconductor layer 360 disposed between the first insulating layer 320 and the second wire 330. 此外,像素阵列720 包括多条扫描线722、多条数据线724、多个主动元件726以及多个画素电极728,修补维构730包括多条第二导线330。 The pixel array 720 comprises a plurality of scan lines 722, a plurality of data lines 724, a plurality of active elements 726 and a plurality of pixel electrodes 728, 730 comprises a patch-dimensional configuration of a second plurality of wires 330. 这些数据线724其中之一分别与修补结构730的这些第二导线330之一电性连接,而每一主动元件726与对应的扫描线722以及数据线724电性连接,每一像素电极728与对应的主动元件726 电性连接。 Wherein one of the data lines 724, respectively, with one of these repair structure 730 330 is electrically connected to the second conductor, and each active element 726 and the corresponding scan line 722 and data line 724 is electrically connected to each pixel electrode 728 and the corresponding to the active element 726 is electrically connected.

更详细而言,基板710例如为玻璃J4^、石英基板或是其它适当材料的基板。 More specifically, for example, a glass substrate 710 J4 ^, a quartz substrate or other suitable substrate material. 扫描线722的材质例如为铝、铝合金或其它适当的导电材质。 Scan line 722, for example made of aluminum, aluminum alloy or other suitable conductive material. 数据线724 的材质例如为铝、铝合金、铬、钛或其它适当的导电材质。 Data line 724, for example made of aluminum, aluminum alloys, chromium, titanium, or other suitable conductive material. 主动元件726例如为薄膜晶体管、具有三端子的开关元件或其它适当的元件。 Active element 726, for example, a thin film transistor, a switching element or other elements suitable three terminals. 像素电极728例如为透明电极、反射电极或是半穿透半反射电极,而像素电极728的材质例如为铟锡氧化物、铟锌氧化物或其它透明或不透明的导电材质。 For example, the pixel electrode 728 is a transparent electrode, a reflective electrode or a transflective electrode, the pixel electrode 728 material, for example indium tin oxide, indium zinc oxide, or other transparent or opaque conductive material. 第一导线731的材质例如与扫描线722的材质相同,且第一导线731例如是与扫描线722同时形成。 The first conductor 731 is for example made of the same material of the scanning lines 722, and the first conductor 731, for example, formed simultaneously with the scanning line 722. 第一绝缘层320的材质例如与前述相同。 A first insulating layer 320, for example, a material same as described above. 第二导线330的材质例如与数据线724的材质相同,且第二导线320例如是与数据线724同时形成。 The second example, the same material of the wire 330 and data line material 724 and second wire 320 may be formed simultaneously with the data line 724. 第二绝缘层340的材质与厚度例如与前述相同。 For example the material thickness of the second insulating layer 340 is the same as previously. 修补连接层350的材质例如与像素电极728相同,且修补连接层350例如是与像素电才及728同时形成。 For example the same material as the patch layer 350 connected to the pixel electrode 728, and the prosthesis is connected, for example, the pixel layer 350 and 728 are simultaneously formed only electrically. 半导体层360 例如包括非晶硅层与掺杂非晶硅层。 The semiconductor layer 360 comprises, for example, an amorphous silicon layer and a doped amorphous silicon layer.

在上述的主动元件阵列基板700的制造过程或是利用主动元件阵列基板700组装一液晶显示面板的过程中,难免可能产生一些瑕疯。 In the manufacturing process of the active matrix substrate 700 or the process using an active element array substrate 700 is assembled in a liquid crystal display panel, may have some flaws inevitably mad. 若^r测到主动元件阵列基板700上有受损的数据线130,则可通过修补结构730进行修补。 If ^ r measured with a damaged data line 130 on the active element array substrate 700, it can be repaired by a repair structure 730. 详细而言,若在主动元件阵列基板700上的一数据线724发生断线瑕疵,则可分别在熔接点730a与730b以激光熔接修补连接层350以及对应连接受损的数据线724的第二导线320,使受损的数据线724通过第二导线320、修补连接层350以及第一导线731导通而恢复大部分的功能。 Specifically, when a data line on the active matrix substrate 700 is disconnected flaws 724, respectively, may be welded points 730a and 730b is connected to the laser welding repair damaged layer 350 and a corresponding data line of the second connector 724 wire 320, so that damage to the data line 724 through the second wire 320, the connection layer 350, and a first patch conductor 731 is turned on and restored most functions.

类似于修补结构300的情况,在进行激光熔接以使修补连接层350与第二导线330炫接在一起时,激光可以轻易地烧穿第二绝缘层340,使修补连接层350与第二导线330熔接在一起。 Structure 300 is similar to the patch, the patch during the laser welding so that the connection layer 350 and the second wire 330 connected together Hyun, the laser can easily burn through the second insulating layer 340, so that repairing the connection layer 350 and the second wire 330 welded together. 因此不容易产生修补失败的情形。 It is not easy to produce failure of the repair situation. 修补完成之后,数据线724则可经由第二导线320、修补连接层350以及第一导线731 而恢复大部分的功能。 After the repair is completed, the data line 724 via the second wire 320 can be, connected to patch 350 and a first conductor layer 731 restoring most functions. 换言之,主动元件阵列基板700将具有较佳的修补合格率。 In other words, the active element array substrate 700 having a preferred repair yield.

点: point:

一、 在本发明所提出的修补结构中,修补连接层与第二导线之间只有单一层的第二绝缘层。 First, the proposed structure of the patch in the present invention, only a single layer of the second patch insulating layer between the connection layer and the second conductor. 当进行激光修补时,激光可以烧穿第二绝缘层,以使修补连接层与第二导线熔接在一起,因此不会产生修补失败的情形。 When the laser repair, the laser can burn through the second insulating layer, so that the repair layer and a second conductor connection are welded together, so that no case of repairing failures. 换言之,修补结构能提高修补合格率。 In other words, the patch structure can improve the passing rate of repair.

二、 本发明所提出的主动元件阵列基板上制作有能提高修补合格率的修补结构,因此也将具有较佳的修补合格率。 Second, there can be improved the production yield of the repair patch structure on the active matrix substrate of the present invention proposed, and will thus have better repair yield.

艺兼容,只需更改其中的几道光罩,但不需增添额外的制造工艺设备。 Arts compatible, simply change one of the few mask, but do not need to add additional manufacturing process equipment.

虽然本发明已以较佳实施例揭露如上,然其并非用以限定本发明,任何熟 Although the present invention has been disclosed above by the preferred embodiments, they are not intended to limit the present invention, any cooked

习此技艺者,在不脱离本发明的精神和范围内,当可作些许的更动与润饰,因此本发明的保护范围当视权利要求书所界定者为准。 This conventional in the art that the present invention without departing from the spirit and scope, it is intended that modifications and variations, and the scope of the invention, when the book following claims and their equivalents.

Claims (13)

  1. 1.一种修补结构,其特征是,包括: 至少一第一导线; 一第一绝缘层,覆盖该第一导线; 至少一第二导线,配置于该第一绝缘层上方; 一第二绝缘层,覆盖该第二导线与该第一绝缘层;以及一修补连接层,配置于该第二绝缘层上,其中该修补连接层与该第一导线电性连接,且该修补连接层与该第二导线重叠但彼此不电性连接。 1. A method for repairing structure, characterized in that, comprising: at least a first lead; a first insulating layer, covering the first conductor; at least a second conductor disposed over the first insulating layer; a second insulating layer covering the second wire and the first insulating layer; and a patch connection layer, disposed on the second insulating layer, wherein the patch is connected to the first conductor layer is connected electrically, and the connection layer and the patch second conductors are not overlapping but electrically connected to each other.
  2. 2. 如权利要求1所述的修补结构,其特征是,该第二绝缘层的厚度介于1500 埃至5000埃之间。 2. The repair structure according to claim 1, characterized in that the second insulating layer has a thickness of between 1500 angstroms to 5000 angstroms.
  3. 3. 如权利要求1所述的修补结构,其特征是,更包括至少一接触孔,该接触孔贯穿该第一绝缘层以及该第二绝缘层,而该修补连接层部份填入该接触孔以电性连接该第一导线。 3. The repair structure according to claim 1, characterized in that, further comprising at least one contact hole, the contact hole passing through the first insulating layer and the second insulating layer, and the connection layer portion filling the patch contacts holes are electrically connected to the first conductor.
  4. 4. 如权利要求1所述的修补结构,其特征是,更包括一半导体层,配置于该第一绝缘层与该第二导线之间。 4. The repair structure according to claim 1, characterized in that, further comprising a semiconductor layer disposed between the first insulating layer and the second conductor.
  5. 5. 如权利要求1所述的修补结构,其特征是,该第二导线部份覆盖于该第一导线的上方。 5. The repair structure according to claim 1, characterized in that, the second conductive portion covering over the first wire.
  6. 6. 如权利要求1所述的修补结构,其特征是,该修补连接层的材质包括铟锡氧化物、铟锌氧化物、金属、合金或上述材质组合其中之一。 6. The repair structure according to claim 1, characterized in that the patch comprises a connecting layer made of indium tin oxide, indium zinc oxide, a metal, alloy, or combination of materials wherein the above-described one.
  7. 7. —种主动元件阵列基板,其特征是,包括: 一基;f反,具有一显示区与一周边电路区; 一像素阵列,配置于该基板上的该显示区内;以及一修补结构,配置于该基板上的周边电路区内,该修补结构与该像素阵列电性连4妾,且包括: 至少一第一导线; 一第一绝缘层,覆盖该第一导线;至少一第二导线,配置于该第一绝缘层上方,且与该像素阵列电性连接; 一第二绝缘层,覆盖该第二导线与该第一绝缘层;以及一修补连接层,配置于该第二绝缘层上,其中该修补连接层与该第一导线电性连接,且该修补连接层与该第二导线重叠但彼此不电性连接。 7. - kind of active element array substrate, characterized in that, comprising: a base; anti-F, having a display region and a peripheral circuit region; a pixel array disposed on the substrate, the display region; and a patch structure , disposed on the substrate, the peripheral circuit area, the patch structure electrically connected to the pixel array 4 concubine, and comprising: at least a first lead; a first insulating layer, covering the first conductor; at least a second wires, disposed over the first insulating layer and connected electrically to the pixel array; a second insulating layer covering the second wire and the first insulating layer; and a patch connection layer, disposed on the second insulating layer, wherein the patch is connected to the first conductor layer is connected electrically, and the patch is connected to the second conductive layer overlap each other but are not electrically connected.
  8. 8. 如权利要求7所述的主动元件阵列基板,其特征是,该第二绝缘层的厚度介于1500埃至5000埃之间。 The active matrix substrate as claimed in claim 7, characterized in that the second insulating layer has a thickness of between 1500 angstroms to 5000 angstroms.
  9. 9. 如权利要求7所述的主动元件阵列基板,其特征是,该修补结构更包括至少一接触孔,该接触孔贯穿该第一绝缘层以及该第二绝缘层,而该修补连接层部份填入该接触孔以电性连接该第一导线。 9. The active matrix substrate according to claim 7, characterized in that the patch structure further comprises at least one contact hole, the contact hole passing through the first insulating layer and the second insulating layer, and the patch portion connecting layer parts of filling the contact hole is electrically connected to the first conductor.
  10. 10. 如权利要求7所述的主动元件阵列基板,其特征是,该像素阵列包括多条扫描线、多条数据线、多个主动元件以及多个像素电极,该修补结构包括多条第二导线,且该些数据线其中之一分别与该修补结构的该些第二导线之一电性连接,每一主动元件与对应的扫描线以及数据线电性连接,每一像素电极与对应的主动元件电性连接。 10. The active matrix substrate according to claim 7, wherein the pixel array comprises a plurality of scan lines, a plurality of data lines, a plurality of active elements and a plurality of pixel electrodes, the second patch structure comprises a plurality of conductor, and wherein one of the data lines are electrically connected to one of the plurality of conductors of the second patch structure, each active element and a corresponding scan line and a data line electrically connected to each pixel electrode and the corresponding electrically connected to the active element.
  11. 11. 如权利要求7所述的主动元件阵列基板,其特征是,该修补结构更包括一半导体层,配置于该第一绝缘层与该第二导线之间。 11. The active matrix substrate according to claim 7, characterized in that the patch structure further comprises a semiconductor layer disposed between the first insulating layer and the second conductor.
  12. 12. 如权利要求7所述的主动元件阵列基板,其特征是,该第二导线部份覆盖于该第一导线的上方。 12. The active matrix substrate according to claim 7, characterized in that, the second conductive portion covering over the first wire.
  13. 13. 如权利要求12所述的主动元件阵列基板,其特征是,该修补连接层的材质包括铟锡氧化物、铟锌氧化物、金属、合金或上述材质组合其中之一。 13. The active matrix substrate according to claim 12, characterized in that the patch comprises a connecting layer made of indium tin oxide, indium zinc oxide, a metal, alloy, or combination of materials wherein the above-described one.
CN 200610100236 2006-07-05 2006-07-05 Repairing structure and active component array substrate CN100454556C (en)

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CN103247245B (en) * 2012-02-03 2015-12-16 元太科技工业股份有限公司 The circuit configuration of the display panel
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CN105629608A (en) * 2016-01-15 2016-06-01 武汉华星光电技术有限公司 Array substrate structure and array substrate broken line repairing method
WO2018068298A1 (en) * 2016-10-14 2018-04-19 Boe Technology Group Co., Ltd. Array substrate and repairing method thereof

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5062690A (en) 1989-06-30 1991-11-05 General Electric Company Liquid crystal display with redundant FETS and redundant crossovers connected by laser-fusible links
US5303074A (en) 1991-04-29 1994-04-12 General Electric Company Embedded repair lines for thin film electronic display or imager devices
US5473452A (en) 1994-12-21 1995-12-05 Goldstar Co., Ltd. Liquid crystal display device with repair structure
CN1142057A (en) 1995-05-30 1997-02-05 株式会社先进展示 Array base plate, liquid-crystal displaying device of thin-film transistor, and method for production of said base plate

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5062690A (en) 1989-06-30 1991-11-05 General Electric Company Liquid crystal display with redundant FETS and redundant crossovers connected by laser-fusible links
US5303074A (en) 1991-04-29 1994-04-12 General Electric Company Embedded repair lines for thin film electronic display or imager devices
US5473452A (en) 1994-12-21 1995-12-05 Goldstar Co., Ltd. Liquid crystal display device with repair structure
CN1142057A (en) 1995-05-30 1997-02-05 株式会社先进展示 Array base plate, liquid-crystal displaying device of thin-film transistor, and method for production of said base plate

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