CN108594553B - Array substrate, repairing method thereof and display device - Google Patents
Array substrate, repairing method thereof and display device Download PDFInfo
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- CN108594553B CN108594553B CN201810432820.6A CN201810432820A CN108594553B CN 108594553 B CN108594553 B CN 108594553B CN 201810432820 A CN201810432820 A CN 201810432820A CN 108594553 B CN108594553 B CN 108594553B
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- G—PHYSICS
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136259—Repairing; Defects
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- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/13624—Active matrix addressed cells having more than one switching element per pixel
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136259—Repairing; Defects
- G02F1/136268—Switch defects
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Abstract
When the switch thin film transistor in the pixel unit has defects, the pixel unit can be effectively repaired by arranging the repair thin film transistor in the pixel unit to replace the switch thin film transistor with the defects to work, so that the repair thin film transistor can be repaired badly, the pixel unit can be prevented from being subjected to shading treatment, the picture display effect is improved, and the display panel with high resolution is favorably realized.
Description
Technical Field
The invention relates to the technical field of display, in particular to an array substrate, a repairing method thereof and a display device.
Background
At present, a Thin Film Transistor Liquid Crystal Display (TFT-LCD) is the mainstream of a flat panel Display, and has been widely applied to the fields of televisions, mobile phones, computers, and the like. TFT-LCDs generally include: an array substrate and an opposite substrate which are oppositely arranged, and a liquid crystal layer filled between the two substrates. The working principle is that the rotation of liquid crystal molecules of the liquid crystal layer is controlled by applying driving voltage to the liquid crystal layer, and light rays of the backlight module are refracted out to generate a picture.
As shown in fig. 1, the array substrate of the conventional TFT-LCD generally includes a plurality of pixel units 10 arranged in an array, a gate line 20 disposed corresponding to each row of the pixel units 10 and extending in a row direction, and a data line 30 disposed corresponding to each column of the pixel units 10 and extending in a column direction. The pixel cell 10 generally includes a TFT11 and a pixel electrode 12. The TFT11 has a gate electrically connected to the corresponding gate line 20, a source electrically connected to the corresponding data line 30, and a drain electrically connected to the corresponding pixel electrode 12, and is configured to provide the data signal transmitted from the data line 30 to the pixel electrode 12 under the control of the switching scan signal transmitted from the gate line 20.
In the production process of the array substrate, due to the complex production process and the influence of the production process and the factory environment, a short circuit condition caused by foreign matters or broken films and the like in a pixel unit may occur, so that a display defect which is easily recognized by human eyes appears in a display picture, and the picture display quality is seriously influenced. The existing repair technology usually implements simple repair by performing shading treatment on a pixel unit with abnormal display, which will result in reduced picture display effect and is not beneficial to implementing a high-resolution TFT-LCD.
Disclosure of Invention
The embodiment of the invention provides an array substrate, a repairing method thereof and a display device, which can repair defects and improve the display effect.
Therefore, an embodiment of the present invention provides an array substrate, including: a plurality of pixel units having switching thin film transistors; each of the pixel units further includes: at least one repair thin film transistor;
the repair thin film transistor is used to replace a switching thin film transistor in which a defect occurs in the pixel unit.
Optionally, in the array substrate provided in the embodiment of the present invention, the array substrate further includes: a plurality of gate lines and a plurality of data lines: the pixel unit further comprises a pixel electrode;
in the same pixel unit, the grid electrode of the repair thin film transistor and the grid electrode of the switch thin film transistor are electrically connected with the same grid line, the source electrode of the repair thin film transistor and the source electrode of the switch thin film transistor are electrically connected with the same data line, and the drain electrode of the repair thin film transistor and the drain electrode of the switch thin film transistor are electrically connected with the pixel electrode.
Optionally, in the array substrate provided in the embodiment of the present invention, at least one of a gate, a source, and a drain of the repair thin film transistor is in a floating state.
Optionally, in the array substrate provided in the embodiment of the present invention, the array substrate further includes: a plurality of gate lines and a plurality of data lines: the pixel unit further comprises a pixel electrode; the grid electrode of the switch thin film transistor is electrically connected with a grid line, the source electrode of the switch thin film transistor is electrically connected with a data line, and the drain electrode of the switch thin film transistor is electrically connected with the pixel electrode;
the grid electrode, the source electrode and the drain electrode of the repairing thin film transistor are all in a floating state; in the same pixel unit, when the switch thin film transistor has a defect, the gate electrode of the repair thin film transistor is electrically connected with the corresponding gate line, the source electrode of the repair thin film transistor is electrically connected with the corresponding data line, and the drain electrode of the repair thin film transistor is electrically connected with the corresponding pixel electrode.
Optionally, in the array substrate provided in an embodiment of the present invention, the switching thin film transistor is a dual-gate structure, and the switching thin film transistor includes: a first sub-switching thin film transistor and a second sub-switching thin film transistor; the grid electrode of the first sub-switch thin film transistor and the grid electrode of the second sub-switch thin film transistor are electrically connected with corresponding grid lines, the source electrode of the first sub-switch thin film transistor is electrically connected with corresponding data lines, the drain electrode of the first sub-switch thin film transistor is electrically connected with the source electrode of the second sub-switch thin film transistor, and the drain electrode of the second sub-switch thin film transistor is electrically connected with the pixel electrode; and/or the presence of a gas in the atmosphere,
the repair thin film transistor is of a double-gate structure, and comprises: a first sub-repair thin film transistor and a second sub-repair thin film transistor; the grid electrode of the first sub-repairing thin film transistor is electrically connected with the grid electrode of the second sub-repairing thin film transistor and is used as the grid electrode of the repairing thin film transistor; and the source electrode of the first sub-repairing thin film transistor is used as the source electrode of the repairing thin film transistor, the drain electrode of the first sub-repairing thin film transistor is electrically connected with the source electrode of the second sub-repairing thin film transistor, and the drain electrode of the second sub-repairing thin film transistor is used as the drain electrode of the repairing thin film transistor.
Optionally, in the array substrate provided in the embodiment of the present invention, a gate of each of the repair thin film transistors and a gate of each of the switch thin film transistors are made of the same material at the same layer; and/or the presence of a gas in the atmosphere,
the active layer of each repair thin film transistor and the active layer of each switch thin film transistor are made of the same material in the same layer; and/or the presence of a gas in the gas,
and the source and drain electrodes of the repair thin film transistors and the source and drain electrodes of the switch thin film transistors are made of the same material in the same layer.
Optionally, in the array substrate provided in the embodiment of the present invention, one switch thin film transistor is provided with one repair thin film transistor correspondingly.
Correspondingly, an embodiment of the present invention further provides a method for repairing an array substrate, including:
determining that a switching thin film transistor in a pixel unit is defective;
and cutting off the electric connection part of the defective switch thin film transistor in the pixel unit by laser, and replacing the defective switch thin film transistor with a repair thin film transistor in the pixel unit to work.
Optionally, in the repair method provided in an embodiment of the present invention, when the switching thin film transistor has a dual-gate structure, the laser cutting off an electrical connection of the defective switching thin film transistor in the pixel unit specifically includes:
cutting off the connection between the grid electrode of the first sub-switch thin film transistor and the corresponding grid line through laser; and/or the presence of a gas in the gas,
cutting off the connection between the grid electrode of the second sub-switch thin film transistor and the corresponding grid line through laser; and/or the presence of a gas in the gas,
cutting off the connection between the source electrode of the first sub-switch thin film transistor and the corresponding data line through laser; and/or the presence of a gas in the gas,
cutting off a connection between the drain electrode of the first sub-switch thin film transistor and the source electrode of the second sub-switch thin film transistor through laser; and/or the presence of a gas in the gas,
and cutting off the connection between the drain electrode of the second sub-switch thin film transistor and the corresponding pixel electrode by laser.
Correspondingly, the embodiment of the invention also provides a display device which comprises the array substrate provided by the embodiment of the invention.
The invention has the following beneficial effects:
according to the array substrate, the repairing method and the display device provided by the embodiment of the invention, when the switch thin film transistor in the pixel unit has a defect, the pixel unit can be effectively repaired by arranging the repairing thin film transistor in the pixel unit to replace the defective switch thin film transistor for working, so that the repairing thin film transistor can be used for repairing badness, the pixel unit can be prevented from being subjected to shading treatment, the picture display effect is improved, and the display panel with high resolution is favorably realized.
Drawings
Fig. 1 is a schematic structural diagram of an array substrate in the prior art;
fig. 2a is a schematic top view of an array substrate according to an embodiment of the present invention;
fig. 2b is a second schematic diagram of a top view structure of the array substrate according to the embodiment of the present invention;
fig. 3a is a schematic partial structure diagram of an array substrate according to an embodiment of the invention;
fig. 3b is a second schematic view of a partial structure of an array substrate according to an embodiment of the invention;
FIG. 4 is a layout diagram of a switch TFT and a repair TFT in a pixel unit of the array substrate shown in FIG. 2 a;
FIG. 5 is a flow chart of a repair method provided by an embodiment of the present invention;
fig. 6a is a schematic view illustrating laser cutting performed on an array substrate according to an embodiment of the present invention;
fig. 6b is a second schematic view illustrating laser cutting of the array substrate according to the embodiment of the invention.
Detailed Description
In general, a method for performing a darkening process on a pixel unit that displays an abnormal condition is to cut off an electrical connection between the TFT11 and the data line 30 in fig. 1, so as to prevent a data signal transmitted by the data line 30 from being supplied to the pixel electrode 12, and prevent liquid crystal molecules corresponding to the pixel electrode 12 from rotating, thereby darkening a point in the pixel unit without light transmission. This results in a reduction in the number of pixel units used for display, resulting in a reduction in the picture display effect, which is not favorable for realizing a high-resolution TFT-LCD.
Therefore, the embodiment of the invention provides the array substrate, which can repair the pixel units with abnormal display, improve the picture display effect and is beneficial to realizing the TFT-LCD with high resolution.
In order to make the objects, technical solutions and advantages of the present invention clearer, specific embodiments of an array substrate, a repairing method thereof and a display device according to an embodiment of the present invention are described in detail below with reference to the accompanying drawings. It should be understood that the preferred embodiments described below are only for illustrating and explaining the present invention and are not to be used for limiting the present invention. And the embodiments and features of the embodiments in the present application may be combined with each other without conflict. In addition, the thickness, size and shape of each layer of film in the drawings do not reflect the real proportion of the array substrate, and the purpose is only to schematically illustrate the content of the invention.
An array substrate according to an embodiment of the present invention, as shown in fig. 2a and fig. 2b (fig. 2a and fig. 2b only take a pixel unit including a repair tft as an example), may include: a plurality of pixel units 110 having switching thin film transistors 111. Also, each pixel unit 110 may further include: at least one repair thin film transistor 112; among them, the repair thin film transistor 112 is used to replace the switching thin film transistor 111 in which a defect occurs in the pixel unit 110.
According to the array substrate provided by the embodiment of the invention, when the switch thin film transistor in the pixel unit has a defect, the pixel unit can be effectively repaired by arranging the repair thin film transistor in the pixel unit to replace the defective switch thin film transistor to work, so that the repair thin film transistor can repair the defect, the pixel unit can be prevented from being subjected to dark spot treatment, the picture display effect is improved, and the high-resolution display panel is favorably realized.
In practical implementation, in the embodiment of the present invention, at least one repair thin film transistor may be disposed corresponding to one switching thin film transistor. Specifically, one repair thin film transistor may be provided corresponding to one switching thin film transistor. Therefore, when the switch thin film transistor is damaged, the repair thin film transistor which is correspondingly arranged can be adopted to replace the switch thin film transistor for working, and the pixel aperture ratio can be improved. Or, 2 repairing thin film transistors may be correspondingly arranged on one switching thin film transistor, so that when the switching thin film transistor and the corresponding 1 repairing thin film transistor are damaged, another repairing thin film transistor may be used to replace the switching thin film transistor to operate. In practical applications, the number of the repair thin film transistors provided in each pixel unit may be determined by design according to practical applications.
Further, in order to unify the processes and reduce the difficulty of process preparation, in the embodiment of the present invention, the same number of repair thin film transistors may be disposed in each pixel unit. For example, as shown in fig. 2a and 2b, a repair tft 112 may be provided in each pixel unit 110. Alternatively, 2 repair thin film transistors may be provided in each pixel unit. Of course, the number of the repair thin film transistors provided in each pixel unit may be determined according to the actual application design, and is not limited herein.
In a TFT-LCD, a switching thin film transistor is generally provided in one pixel unit to control input of a data signal into a pixel electrode. In the embodiment of the invention, as shown in fig. 2a and fig. 2b, each pixel unit 110 may be provided with a switching thin film transistor 111 and a repairing thin film transistor 112.
The structure of the array substrate provided by the present invention is described below by way of examples, but the reader should understand that the structure is not limited thereto.
The first embodiment,
In specific implementation, as shown in fig. 2a, the array substrate may further include: a plurality of gate lines 120 and a plurality of data lines 130: in the embodiment of the present invention, the pixel unit 110 further includes a pixel electrode 113; in the same pixel unit 110, the gate of the repair thin film transistor 112 and the gate of the switch thin film transistor 111 are electrically connected to the same gate line 120, the source of the repair thin film transistor 112 and the source of the switch thin film transistor 111 are electrically connected to the same data line 130, and the drain of the repair thin film transistor 112 and the drain of the switch thin film transistor 111 are electrically connected to the pixel electrode 113. Thus, under the control of the switching scan signal transmitted by the gate line 120, the switching thin film transistor 111 and the repairing thin film transistor 112 in the pixel unit 110 are turned on to generate a plurality of signal paths, so that the data signal transmitted by the data line 130 is provided to the pixel electrode 113. When a defect such as a short circuit occurs due to a foreign substance occurring in the switching thin film transistor 111 in the pixel unit 110, the switching thin film transistor 111 and an electrically connected signal line may be disconnected by laser cutting, and the repairing thin film transistor 112 is used instead of the switching thin film transistor 111 to operate. Of course, when a defect such as a short circuit occurs due to a foreign substance in the repair thin film transistor 112 in the pixel unit 110, the repair thin film transistor 112 may be disconnected from the electrically connected signal line by laser cutting, and the switching thin film transistor 111 may be used to operate. That is, the switching thin film transistor 111 and the repairing thin film transistor 112 can be interchanged. In the later use process, when one of the switch thin film transistor 111 and the repair thin film transistor 112 in a certain pixel unit is damaged, the other transistor can be adopted to transmit signals, and therefore the probability of dark spots of the pixel unit is further reduced.
After writing a data signal into the pixel electrode, in order to reduce a leakage current, as shown in fig. 2a, the switching thin film transistor 111 may be provided as a double gate structure. Specifically, the switching thin film transistor 111 may include: a first sub-switching thin film transistor TFT1 and a second sub-switching thin film transistor TFT 2; the gates of the first sub-switching thin film transistor TFT1 and the second sub-switching thin film transistor TFT2 are electrically connected to the corresponding gate line 120, the source of the first sub-switching thin film transistor TFT1 is electrically connected to the corresponding data line 130, the drain of the first sub-switching thin film transistor TFT1 is electrically connected to the source of the second sub-switching thin film transistor TFT2, and the drain of the second sub-switching thin film transistor TFT2 is electrically connected to the pixel electrode 113. Of course, in practical applications, the switching thin film transistor may also have a single gate structure, and is not limited herein.
In particular, in order to reduce the leakage current, the repairing thin film transistor 112 may be configured as a double gate structure as shown in fig. 2 a. Specifically, repairing the thin film transistor 112 may include: a first sub-repair thin film transistor TFT3 and a second sub-repair thin film transistor TFT 4; the gate electrode of the first sub-repairing thin film transistor TFT3 and the gate electrode of the second sub-repairing thin film transistor TFT4 are electrically connected to the corresponding gate line 120, and serve as the gate electrode of the repairing thin film transistor 112. The source of the first sub-repair thin film transistor TFT3 is electrically connected to the corresponding data line 130 as the source of the repair thin film transistor 112. The drain of the first sub-repair thin film transistor TFT3 is electrically connected to the source of the second sub-repair thin film transistor TFT4, and the drain of the second sub-repair thin film transistor TFT4 is electrically connected to the pixel electrode 113 as the drain of the repair thin film transistor 112. Of course, in practical applications, the repair thin film transistor may also have a single gate structure, and is not limited herein.
Further, in the implementation, as shown in fig. 2a, both the switching thin film transistor 111 and the repairing thin film transistor 112 may be configured as a double-gate structure.
In specific implementation, in the embodiment of the present invention, one of the switching thin film transistor and the repairing thin film transistor may be a top gate type transistor; alternatively, the transistor may be a bottom gate transistor, which is not limited herein. Furthermore, the repairing thin film transistor and the switch thin film transistor can be top gate type transistors; or both may be bottom gate transistors.
In practical applications, the thin film transistor is generally disposed on a substrate. Taking the switching thin film transistor as a top gate type transistor as an example, as shown in fig. 3a and 3b, the switching thin film transistor may include: an active layer 114, a gate electrode 115, a source electrode 116, and a drain electrode 117 sequentially disposed on the base substrate 100. A gate insulating layer 118 is further provided between the active layer 114 and the gate electrode 115, and an interlayer dielectric layer 119 is further provided between the gate electrode 115 and the source/ drain electrodes 116 and 117. The source electrode 116 is electrically connected to the active layer 114 through a via 1161 penetrating through the gate insulating layer 118 and the interlayer dielectric layer 119, and the drain electrode 117 is electrically connected to the active layer 114 through a via 1171 penetrating through the gate insulating layer 118 and the interlayer dielectric layer 119. When the switching thin film transistor has a double-gate structure, the gate 115 may include two sub-gates 1151 and 1152, where the sub-gate 1151 may serve as a gate of the first sub-switching thin film transistor, and the sub-gate 1152 may serve as a gate of the second sub-switching thin film transistor.
Further, in order to avoid the influence of the backlight light on the channel region of the active layer, in a specific implementation, as shown in fig. 3a and 3b, the method may further include: a light-shielding layer 120 disposed between the base substrate 100 and the active layer 114; wherein, the orthographic projection of the light shielding layer 120 on the substrate 100 covers the orthographic projection of the channel region of the active layer 114 on the substrate 100. Further, in order to increase the adhesion of the active layer, as shown in fig. 3a and 3b, the method may further include: and a buffer layer 121 disposed between the light-shielding layer 120 and the active layer 114. In a specific implementation, when the repair thin film transistor is a top gate type transistor, the structure of the repair thin film transistor may refer to the structure of the above-mentioned switch thin film transistor, which is not described herein again.
Further, in a specific implementation, as shown in fig. 3a, the array substrate may further include: the flat layer 122 and the pixel electrode 113 are positioned on one side of the source and drain electrodes 116 and 117, which is far away from the substrate 100; the pixel electrode 113 is electrically connected to the drain electrode 117 of the switching thin film transistor through a via 1131 penetrating through the planarization layer 122. Thus, the display device formed by the array substrate can be at least a TN (Twisted Nematic) type TFT-LCD. The method for preparing the array substrate shown in fig. 3a may be to sequentially prepare on the substrate 100: light-shielding layer 120 → buffer layer 121 → active layer 114 → gate insulating layer 118 → gate electrode 115 → interlayer dielectric layer 119 with vias 1161, 1171 → source and drain electrodes 116, 117 → planarization layer 122 with via 1131 → pixel electrode 113.
Further, as shown in fig. 3b, the array substrate may further include: a flat layer 122, a common electrode layer 123, an inter-electrode insulating layer 124 and a pixel electrode 113 which are positioned on the side of the source and drain electrodes 116 and 117 away from the substrate 100; the pixel electrode 113 is electrically connected to the drain electrode 117 of the switching thin film transistor through a via 1132 penetrating the planarization layer 122 and the inter-electrode insulating layer 124. This makes it possible to realize an ADS (Advanced Super Dimension Switch) or FFS (Fringe Field Switching) type LCD display panel. The method for preparing the array substrate shown in fig. 3b may be to sequentially prepare on the substrate 100: the light-shielding layer 120 → the buffer layer 121 → the active layer 114 → the gate insulating layer 118 → the gate electrode 115 → the interlayer dielectric layer 119 having the via holes 1161, 1171 → the source and drain electrodes 116, 117 → the planarization layer 122 → the common electrode layer 123 → the inter-electrode insulating layer 124 having the via hole 1132 → the pixel electrode 113. The pixel electrode 113 includes a plurality of electrically connected strip electrodes arranged at intervals, the common electrode layer 123 is a block electrode, and in the same pixel unit, an orthogonal projection of each strip electrode on the substrate is located in an orthogonal projection of the common electrode layer on the substrate. Therefore, the liquid crystal molecules are driven to rotate by a spatial electric field formed by the strip electrodes and the common electrode layer, and the FFS type LCD display panel is favorably realized.
Further, in order to reduce the difficulty of the process preparation, in the embodiment of the present invention, in the specific implementation, the gate electrodes of the repair thin film transistors and the gate electrodes of the switch thin film transistors may be made of the same material in the same layer. Therefore, the grid electrodes of the switch thin film transistor and the repair thin film transistor can be formed simultaneously by adopting a one-step composition process, so that the process preparation difficulty can be reduced, and the cost can be reduced. Furthermore, the grid electrode of each grid line, the grid electrode of each repairing thin film transistor and the grid electrode of each switch thin film transistor can be made of the same layer and material.
Further, in order to reduce the difficulty of the process preparation, in the embodiment of the present invention, in the specific implementation, the active layer of each repair thin film transistor and the active layer of each switch thin film transistor may be made of the same material in the same layer. Therefore, the active layers of the switch thin film transistor and the repair thin film transistor can be formed simultaneously by adopting a one-step composition process, so that the process preparation difficulty can be reduced, and the cost can be reduced.
Further, in order to reduce the difficulty of the process preparation, in the embodiment of the invention, the source and drain electrodes of the repair thin film transistors and the source and drain electrodes of the switch thin film transistors can be made of the same material in the same layer. Therefore, the drain electrodes of the switch thin film transistor and the repair thin film transistor can be formed simultaneously by adopting a one-step composition process, so that the process preparation difficulty can be reduced, and the cost can be reduced. Furthermore, the data lines, the source and drain electrodes of the repair thin film transistors and the source and drain electrodes of the switch thin film transistors can be made of the same material in the same layer.
In actual manufacturing, a Layout (Layout) is generally performed on a substrate to form the array substrate provided by the embodiment of the invention, wherein a Layout of the switch thin film transistor and the repair thin film transistor in one pixel unit of the array substrate shown in fig. 2a is shown in fig. 4. The switching thin film transistors (i.e., the first sub-switching thin film transistor TFT1 and the second sub-switching thin film transistor TFT2) and the active layer 114 of the repairing thin film transistors (i.e., the first sub-repairing thin film transistor TFT3 and the second sub-repairing thin film transistor TFT4) are disposed at the same layer, the active layer 114 adopts a structure similar to a square, and the data line 130 is electrically connected to the active layer 114 through the via 1161. The drain 117 is electrically connected to the active layer 114 through a via 1171. The gate electrodes 115 of the switching thin film transistor and the repairing thin film transistor are disposed on the same layer as the gate line 120 and electrically connected thereto. The light-shielding layer 120 covers the orthographic projection of the channel region of the active layer 114 on the substrate 100 and the orthographic projection of the substrate 100.
Example II,
In order to reduce power consumption, at least one of the gate, the source, and the drain of the repair thin film transistor may be in a floating state in implementation. That is, at least one of the gate electrode, the source electrode, and the drain electrode of the repair thin film transistor is not electrically connected to the corresponding signal line and the pixel electrode. Therefore, when the defects such as short circuit caused by foreign matters are not detected in the switching thin film transistor in the pixel unit, signals are transmitted only by adopting the switching thin film transistor, so that the power consumption is reduced. When the defects of short circuit and the like caused by foreign matters of the switching thin film transistor in the pixel unit are detected, the repairing thin film transistor is welded to the corresponding position of the signal line to replace the switching thin film transistor to work. In a specific implementation, the structure of the repair tft may refer to the structure of the repair tft, which is not described herein again.
Specifically, in practical implementation, in the embodiment of the present invention, as shown in fig. 2b, the array substrate may further include: a plurality of gate lines 120 and a plurality of data lines 130: the pixel unit 110 further includes a pixel electrode 113; the gate electrode of the switching thin film transistor 111 is electrically connected to a gate line 120, the source electrode of the switching thin film transistor 111 is electrically connected to a data line 130, and the drain electrode of the switching thin film transistor 111 is electrically connected to the pixel electrode 113.
In practical implementation, in the embodiment of the present invention, as shown in fig. 2b, the gate, the source, and the drain of the repair thin film transistor 111 are all in a floating state, that is, the gate, the source, and the drain of the repair thin film transistor 111 are not electrically connected to the corresponding signal line and the corresponding pixel electrode. In the same pixel unit 110, when the switching thin film transistor is defective, the gate electrode of the repair thin film transistor 111 is electrically connected to the corresponding gate line 120, the source electrode is electrically connected to the corresponding data line 120, and the drain electrode is electrically connected to the corresponding pixel electrode 113.
In the embodiment of the invention, the source electrode of the repairing thin film transistor and the source electrode of the switching thin film transistor are electrically connected with the same data line, and the drain electrode of the repairing thin film transistor and the drain electrode of the switching thin film transistor are electrically connected with the pixel electrode. And in the same pixel unit, when the switch thin film transistor has a defect, the gate electrode of the repair thin film transistor is used for being electrically connected with the corresponding grid line.
In the embodiment of the invention, the grid electrode of the repairing thin film transistor and the grid electrode of the switching thin film transistor are both electrically connected with the same grid line, and the drain electrode of the repairing thin film transistor and the drain electrode of the switching thin film transistor are both electrically connected with the pixel electrode. And, in the same pixel unit, when the switching thin film transistor is defective, the source electrode of the repairing thin film transistor is used for electrically connecting with the corresponding data line.
In the embodiment of the invention, the grid electrode of the repairing thin film transistor and the grid electrode of the switch thin film transistor are both electrically connected with the same grid line, and the source electrode of the repairing thin film transistor and the source electrode of the switch thin film transistor are both electrically connected with the same data line. And, in the same pixel unit, when the switching thin film transistor is defective, the drain electrode of the repairing thin film transistor is used to be electrically connected with the corresponding pixel electrode. When 2 electrodes of the gate, the source and the drain of the repair thin film transistor are in a floating state, so on, and details are not described herein.
In specific implementation, the structure and implementation of the switching thin film transistor and the repairing thin film transistor in the embodiment of the present invention may be referred to as the first embodiment, which is not limited herein.
Based on the same inventive concept, an embodiment of the present invention further provides a method for repairing an array substrate, as shown in fig. 5, the method may include the following steps:
s501, determining that a switch thin film transistor in a pixel unit has a defect;
s502, cutting off the electric connection part of the defective switch thin film transistor in the pixel unit through laser, and replacing the defective switch thin film transistor with the repair thin film transistor in the pixel unit to work.
According to the repairing method provided by the embodiment of the invention, when the switch thin film transistor in the pixel unit has a defect, the pixel unit can be effectively repaired by arranging the repairing thin film transistor in the pixel unit to replace the defective switch thin film transistor to work, so that the repairing thin film transistor can repair the defect, the pixel unit can be prevented from being subjected to shading treatment, the picture display effect is further improved, and the high-resolution display panel is favorably realized.
In a specific implementation, cutting off an electrical connection of the defective switching thin film transistor in the pixel unit by laser may specifically include:
cutting off the connection part between the grid electrode of the switch thin film transistor with the defect and the corresponding grid line by laser; and/or the presence of a gas in the gas,
cutting off the connection between the source electrode of the switch thin film transistor with the defect and the corresponding data line through laser; and/or the presence of a gas in the gas,
and cutting off the connection between the drain electrode of the switching thin film transistor with the defect and the corresponding pixel electrode by laser. When the switching thin film transistor is in a single-gate structure, the switching thin film transistor with defects can be turned off by adopting the laser cutting mode.
In a specific implementation, when the switching thin film transistor has a dual-gate structure, as shown in fig. 6a and 6b, cutting off an electrical connection of the defective switching thin film transistor in the pixel unit by using laser may specifically include:
cutting off a connection a1 between the gate electrode of the first sub-switching thin film transistor TFT1 and the corresponding gate line 120 by laser; and/or the presence of a gas in the gas,
cutting off a connection a2 between the gate electrode of the second sub-switching thin film transistor TFT2 and the corresponding gate line 120 by laser; and/or the presence of a gas in the gas,
cutting off a connection a3 between the source electrode of the first sub-switching thin film transistor TFT1 and the corresponding data line 130 by laser; and/or the presence of a gas in the atmosphere,
cutting off a connection a4 between the drain electrode of the first sub-switching thin film transistor TFT1 and the source electrode of the second sub-switching thin film transistor TFT2 by laser; and/or the presence of a gas in the gas,
the connection a5 of the drain of the second sub-switching thin film transistor TFT2 and the corresponding pixel electrode 113 is cut off by laser. When the switching thin film transistor has a defect of short circuit caused by foreign matters, one or more of the cut-off junctions a1, a2, a3, a4 and a5 can be adopted to short the switching thin film transistor.
When at least one of the gate, the source, and the drain of the thin film transistor is repaired to be in a floating state, the repair method provided by the embodiment of the present invention may further include: the electric connection position of the defective switch thin film transistor in the pixel unit is cut off by laser, and the defective switch thin film transistor is replaced by the repair thin film transistor in the pixel unit to work, which specifically comprises:
cutting off the electric connection of the defective thin film transistor in the pixel unit by laser;
and the repairing thin film transistor in the pixel unit is respectively and correspondingly electrically connected with the grid electrode, the data line and the pixel electrode to replace the defective thin film transistor for working.
Based on the same inventive concept, the embodiment of the invention also provides a display device, which comprises the array substrate provided by the embodiment of the invention. The principle of the display device to solve the problem is similar to the array substrate, so the implementation of the display device can be referred to the implementation of the array substrate, and repeated details are not repeated herein.
In practical implementation, in the embodiment of the present invention, the display device may further include an opposite substrate disposed opposite to the array substrate, and a liquid crystal layer filled between the two substrates.
In specific implementation, the display device according to the embodiment of the invention may be: any product or component with a display function, such as a mobile phone, a tablet computer, a television, a display, a notebook computer, a digital photo frame, a navigator and the like. Other essential components of the display device are understood by those skilled in the art, and are not described herein or should not be construed as limiting the invention.
According to the array substrate, the repairing method and the display device provided by the embodiment of the invention, when the switch thin film transistor in the pixel unit has a defect, the pixel unit can be effectively repaired by arranging the repairing thin film transistor in the pixel unit to replace the switch thin film transistor with the defect to work, so that the repairing thin film transistor can be used for repairing badness, the pixel unit can be prevented from being subjected to shading treatment, the picture display effect is improved, and the display panel with high resolution is favorably realized.
It will be apparent to those skilled in the art that various changes and modifications may be made in the present invention without departing from the spirit and scope of the invention. Thus, if such modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include such modifications and variations.
Claims (4)
1. An array substrate, comprising: a plurality of pixel units having switching thin film transistors; wherein each of the pixel units further comprises: a pixel electrode, a repair thin film transistor and a switching thin film transistor;
the repairing thin film transistor is used for replacing a switch thin film transistor with defects in the pixel unit;
the array substrate further includes: a plurality of gate lines and a plurality of data lines:
in the same pixel unit, the grid electrode of the repair thin film transistor and the grid electrode of the switch thin film transistor are both electrically connected with the same grid line, the source electrode of the repair thin film transistor and the source electrode of the switch thin film transistor are both electrically connected with the same data line, and the drain electrode of the repair thin film transistor and the drain electrode of the switch thin film transistor are both electrically connected with the pixel electrode;
the switching thin film transistor is of a dual-gate structure, and includes: a first sub-switching thin film transistor and a second sub-switching thin film transistor; the grid electrode of the first sub-switch thin film transistor and the grid electrode of the second sub-switch thin film transistor are electrically connected with corresponding grid lines, the source electrode of the first sub-switch thin film transistor is electrically connected with corresponding data lines, the drain electrode of the first sub-switch thin film transistor is electrically connected with the source electrode of the second sub-switch thin film transistor, and the drain electrode of the second sub-switch thin film transistor is electrically connected with the pixel electrode;
the repair thin film transistor is of a double-gate structure, and comprises: a first sub-repair thin film transistor and a second sub-repair thin film transistor; the grid electrode of the first sub-repairing thin film transistor and the grid electrode of the second sub-repairing thin film transistor are electrically connected with corresponding grid lines and are used as the grid electrodes of the repairing thin film transistors; the source electrode of the first sub-repairing thin film transistor is used as the source electrode of the repairing thin film transistor, the drain electrode of the first sub-repairing thin film transistor is electrically connected with the source electrode of the second sub-repairing thin film transistor, and the drain electrode of the second sub-repairing thin film transistor is used as the drain electrode of the repairing thin film transistor;
the active layers of the first sub-repairing thin film transistor and the second sub-repairing thin film transistor and the active layers of the first sub-switching thin film transistor and the second sub-switching thin film transistor are made of the same layer and the same material, and the active layers of the first sub-repairing thin film transistor and the second sub-repairing thin film transistor in the same pixel unit are in direct contact with the active layers of the first sub-switching thin film transistor and the second sub-switching thin film transistor, and form a square structure;
in the same pixel unit, a first connecting line between the first sub-switch thin film transistor and the second sub-repairing thin film transistor is parallel to the data line, and a second connecting line between the second sub-switch thin film transistor and the first sub-repairing thin film transistor is parallel to the gate line; the first connecting line and the second connecting line are crossed to form a cross shape.
2. The array substrate of claim 1, wherein the source and drain electrodes of each of the repair thin film transistors are of the same material as the source and drain electrodes of each of the switch thin film transistors.
3. A method for repairing the array substrate according to claim 1 or 2, comprising:
determining that a switching thin film transistor in a pixel unit is defective;
cutting off the electric connection position of the defective switch thin film transistor in the pixel unit by laser, and replacing the defective switch thin film transistor with a repair thin film transistor in the pixel unit to work;
when the switching thin film transistor is in a dual-gate structure, the laser cutting off the electrical connection of the defective switching thin film transistor in the pixel unit specifically includes:
cutting off the connection between the grid electrode of the first sub-switch thin film transistor and the corresponding grid line through laser; and/or the presence of a gas in the gas,
cutting off the connection between the grid electrode of the second sub-switch thin film transistor and the corresponding grid line through laser; and/or the presence of a gas in the gas,
cutting off the connection between the source electrode of the first sub-switch thin film transistor and the corresponding data line through laser; and/or the presence of a gas in the gas,
cutting off a connection between the drain electrode of the first sub-switch thin film transistor and the source electrode of the second sub-switch thin film transistor through laser; and/or the presence of a gas in the gas,
and cutting off the connection between the drain electrode of the second sub-switch thin film transistor and the corresponding pixel electrode by laser.
4. A display device comprising the array substrate according to claim 1 or 2.
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| CN111403372B (en) * | 2020-03-31 | 2022-05-10 | 湖北长江新型显示产业创新中心有限公司 | Micro LED display panel, preparation method thereof and display device |
| CN113035117A (en) | 2021-03-15 | 2021-06-25 | 京东方科技集团股份有限公司 | Array substrate, driving method thereof and display device |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101191964A (en) * | 2006-11-27 | 2008-06-04 | 中华映管股份有限公司 | Pixel structure and its repairing method |
| CN102832212A (en) * | 2012-08-20 | 2012-12-19 | 京东方科技集团股份有限公司 | Array substrate, display device and drive method thereof |
| CN103345093A (en) * | 2013-06-28 | 2013-10-09 | 京东方科技集团股份有限公司 | Pixel unit, array substrate, manufacturing and restoring method of array substrate and display device |
| CN104751760A (en) * | 2013-12-27 | 2015-07-01 | 乐金显示有限公司 | Display device with redundant transistor structure |
| CN106054416A (en) * | 2016-06-15 | 2016-10-26 | 苏州众显电子科技有限公司 | Liquid crystal display thin film transistor structure |
-
2018
- 2018-05-08 CN CN201810432820.6A patent/CN108594553B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101191964A (en) * | 2006-11-27 | 2008-06-04 | 中华映管股份有限公司 | Pixel structure and its repairing method |
| CN102832212A (en) * | 2012-08-20 | 2012-12-19 | 京东方科技集团股份有限公司 | Array substrate, display device and drive method thereof |
| CN103345093A (en) * | 2013-06-28 | 2013-10-09 | 京东方科技集团股份有限公司 | Pixel unit, array substrate, manufacturing and restoring method of array substrate and display device |
| CN104751760A (en) * | 2013-12-27 | 2015-07-01 | 乐金显示有限公司 | Display device with redundant transistor structure |
| CN106054416A (en) * | 2016-06-15 | 2016-10-26 | 苏州众显电子科技有限公司 | Liquid crystal display thin film transistor structure |
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