CN108594553A - A kind of array substrate, its restorative procedure and display device - Google Patents
A kind of array substrate, its restorative procedure and display device Download PDFInfo
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- CN108594553A CN108594553A CN201810432820.6A CN201810432820A CN108594553A CN 108594553 A CN108594553 A CN 108594553A CN 201810432820 A CN201810432820 A CN 201810432820A CN 108594553 A CN108594553 A CN 108594553A
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136259—Repairing; Defects
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/13624—Active matrix addressed cells having more than one switching element per pixel
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136259—Repairing; Defects
- G02F1/136268—Switch defects
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
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- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
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Abstract
The invention discloses a kind of array substrate, its restorative procedure and display devices, when there is defect in the switching thin-film transistor in pixel unit, the embodiment of the present invention can effectively repair the pixel unit by the way that reparation thin film transistor (TFT) is arranged in pixel unit, to replace the switching thin-film transistor for defect occur to work, therefore, repairing thin film transistor (TFT) can be with faulty restoration, so as to avoid doing dim spotization processing to pixel unit, and then improve picture display effect, it is advantageously implemented high-resolution display panel.
Description
Technical field
The present invention relates to display technology field, more particularly to a kind of array substrate, its restorative procedure and display device.
Background technology
Currently, liquid crystal display panel of thin film transistor (Thin Film Transistor Liquid Crystal
Display, abbreviation TFT-LCD) mainstream that becomes flat-panel monitor, have been widely used for the necks such as TV, mobile phone, computer
Domain.TFT-LCD is generally comprised：The array substrate and opposite substrate that are oppositely arranged and the filling liquid crystal layer between two substrates.Its
Operation principle is to control the rotation of the liquid crystal molecule of liquid crystal layer by applying driving voltage to liquid crystal layer, by the light of backlight module
Line reflects generation picture.
As shown in Figure 1, the array substrate of existing TFT-LCD generally comprise the multiple pixel units 10 arranged in array,
The edge that the corresponding grid line 20 extended along line direction being arranged per one-row pixels unit 10, corresponding each row pixel unit 10 are arranged arranges
The data line 30 that direction extends.Wherein, pixel unit 10 generally includes TFT11 and pixel electrode 12.Wherein, the grid of TFT11
It is electrically connected corresponding grid line 20, source electrode is electrically connected corresponding data line 30, and drain electrode is electrically connected corresponding pixel electrode 12, is used for
The data-signal that data line 30 transmits is supplied to pixel electrode 12 under the control for the switch scanning signal that grid line 20 transmits.
In the production process of array substrate, due to production process complexity, influenced by production technology and power house environment, it can
It can lead to occur in pixel unit foreign matter or film is broken etc. leads to short-circuit conditions, human eye can occur in showing picture in this way and compare
The display defect easily identified out, seriously affects image display quality.Existing recovery technique is typically to the abnormal picture of display
Plain unit does dim spotization processing to realize simple reparation, picture display effect will be caused to reduce in this way, is unfavorable for realizing high score
The TFT-LCD of resolution.
Invention content
A kind of array substrate of offer of the embodiment of the present invention, its restorative procedure and display device can be improved aobvious with faulty restoration
Show effect.
Therefore, an embodiment of the present invention provides a kind of array substrates, including：Multiple pixels with switching thin-film transistor
Unit；Each pixel unit further includes：At least one reparation thin film transistor (TFT)；
The reparation thin film transistor (TFT) is used to replace the switching thin-film transistor of defect occur in the pixel unit.
Optionally, in above-mentioned array substrate provided in an embodiment of the present invention, the array substrate further includes：A plurality of grid line
And multiple data lines：The pixel unit further includes pixel electrode；
In the same pixel unit, the grid of the grid and the switching thin-film transistor for repairing thin film transistor (TFT)
Extremely be electrically connected with same grid line, the source electrode of source electrode and the switching thin-film transistor for repairing thin film transistor (TFT) with
The electrical connection of same data line, the drain electrode of the drain electrode for repairing thin film transistor (TFT) and the switching thin-film transistor with it is described
Pixel electrode is electrically connected.
Optionally, in above-mentioned array substrate provided in an embodiment of the present invention, the grid for repairing thin film transistor (TFT), source
At least one of pole and drain electrode electrode are in floating.
Optionally, in above-mentioned array substrate provided in an embodiment of the present invention, the array substrate further includes：A plurality of grid line
And multiple data lines：The pixel unit further includes pixel electrode；Wherein, the grid of the switching thin-film transistor and a grid
Line is electrically connected, and the source electrode of the switching thin-film transistor is electrically connected with a data line, the drain electrode of the switching thin-film transistor
It is electrically connected with the pixel electrode；
The grid for repairing thin film transistor (TFT), source electrode and drain electrode are in floating；In the same pixel list
In member, when defect occurs in the switching thin-film transistor, the grid for repairing thin film transistor (TFT) is used for and corresponding grid line
Electrical connection, source electrode are used to be electrically connected with corresponding data line, and drain electrode with corresponding pixel electrode for being electrically connected.
Optionally, in above-mentioned array substrate provided in an embodiment of the present invention, the switching thin-film transistor is bigrid
Structure, the switching thin-film transistor include：First sub switch thin film transistor (TFT) and the second sub switch thin film transistor (TFT)；Wherein,
The grid of the grid of the first sub switch thin film transistor (TFT) and the second sub switch thin film transistor (TFT) with corresponding grid line
Electrical connection, the source electrode of the first sub switch thin film transistor (TFT) are electrically connected with corresponding data line, the first sub switch film
The drain electrode of transistor is electrically connected with the source electrode of the second sub switch thin film transistor (TFT), the second sub switch thin film transistor (TFT)
Drain electrode is electrically connected with the pixel electrode；And/or
The reparation thin film transistor (TFT) is double-grid structure, and the reparation thin film transistor (TFT) includes：First son repairs film
Transistor and the second son repair thin film transistor (TFT)；Wherein, first son repairs the grid of thin film transistor (TFT) and second son
The grid electrical connection for repairing thin film transistor (TFT), as the grid for repairing thin film transistor (TFT)；It is brilliant that first son repairs film
The source electrode of body pipe repairs the drain electrode and described the of thin film transistor (TFT) as the source electrode for repairing thin film transistor (TFT), first son
Two sons repair the source electrode electrical connection of thin film transistor (TFT), and second son repairs the drain electrode of thin film transistor (TFT) as the reparation film
The drain electrode of transistor.
Optionally, in above-mentioned array substrate provided in an embodiment of the present invention, each grid for repairing thin film transistor (TFT)
With the grid same layer same material of each switching thin-film transistor；And/or
The active layer same layer same material of each active layer and each switching thin-film transistor for repairing thin film transistor (TFT)；
And/or
The source-drain electrode same layer same material of each source-drain electrode and each switching thin-film transistor for repairing thin film transistor (TFT).
Optionally, in above-mentioned array substrate provided in an embodiment of the present invention, a switching thin-film transistor is correspondingly arranged
One reparation thin film transistor (TFT).
Correspondingly, the embodiment of the present invention additionally provides a kind of restorative procedure of array substrate provided in an embodiment of the present invention,
Including：
Determine that defect occurs in the switching thin-film transistor in pixel unit；
By occurring the switching thin-film transistor of defect described in laser cutting at the electrical connection in the pixel unit, adopt
The switching thin-film transistor for defect occur is replaced to work with the reparation thin film transistor (TFT) in the pixel unit.
Optionally, it is double grid in the switching thin-film transistor in above-mentioned restorative procedure provided in an embodiment of the present invention
It is described by occurring electrical connection of the switching thin-film transistor of defect in the pixel unit described in laser cutting when the structure of pole
Place, specifically includes：
Pass through the junction between the grid and corresponding grid line of laser cutting the first sub switch thin film transistor (TFT)；And/or
Pass through the junction between the grid and corresponding grid line of laser cutting the second sub switch thin film transistor (TFT)；And/or
Pass through the junction between the source electrode and corresponding data line of laser cutting the first sub switch thin film transistor (TFT)；With/
Or,
By the drain electrode and the source electrode of the second sub switch thin film transistor (TFT) of laser cutting the first sub switch thin film transistor (TFT) it
Between junction；And/or
Drain electrode by laser cutting the second sub switch thin film transistor (TFT) and the junction of corresponding pixel electrode.
Correspondingly, the embodiment of the present invention additionally provides a kind of display device, including above-mentioned battle array provided in an embodiment of the present invention
Row substrate.
The present invention has the beneficial effect that：
Array substrate, its restorative procedure and display device provided in an embodiment of the present invention, when the switch in pixel unit is thin
When defect occurs in film transistor, the embodiment of the present invention can be effectively right by the way that reparation thin film transistor (TFT) is arranged in pixel unit
The pixel unit is repaired, and to replace the switching thin-film transistor for defect occur to work, therefore, repairs thin film transistor (TFT)
So as to avoid doing dim spotization processing to pixel unit, and then picture display effect can be improved with faulty restoration, is conducive to reality
Existing high-resolution display panel.
Description of the drawings
Fig. 1 is the structural schematic diagram of array substrate in the prior art；
Fig. 2 a are one of the overlooking structure diagram of array substrate provided in an embodiment of the present invention；
Fig. 2 b are the two of the overlooking structure diagram of array substrate provided in an embodiment of the present invention；
Fig. 3 a are one of the partial structural diagram of array substrate provided in an embodiment of the present invention；
Fig. 3 b are the two of the partial structural diagram of array substrate provided in an embodiment of the present invention；
Fig. 4 is switching thin-film transistor and reparation film crystal in a pixel unit of array substrate shown in Fig. 2 a
The layout of pipe；
Fig. 5 is the flow chart of restorative procedure provided in an embodiment of the present invention；
Fig. 6 a are one of the schematic diagram that array substrate provided in an embodiment of the present invention is cut by laser；
Fig. 6 b are the two of the schematic diagram that array substrate provided in an embodiment of the present invention is cut by laser.
Specific implementation mode
The method that pixel unit generally abnormal to display does dim spotization processing, such as by the TFT11 and data line in Fig. 1
It is cut off at 30 electrical connection, to which the data-signal for avoiding data line 30 from transmitting is supplied to pixel electrode 12, makes pixel electrode 12
Corresponding liquid crystal molecule leads to unglazed transmission in the pixel unit and becomes dim spot without rotation.It will cause for showing in this way
The quantity of the pixel unit shown reduces, and is reduced so as to cause picture display effect, is unfavorable for realizing high-resolution TFT-LCD.
Based on this, an embodiment of the present invention provides a kind of array substrates, can repair the abnormal pixel unit of display, improve
Picture display effect is advantageously implemented high-resolution TFT-LCD.
In order to make the purpose of the present invention, technical solution and advantage are clearer, below in conjunction with the accompanying drawings, to the embodiment of the present invention
The specific implementation mode of the array substrate of offer, its restorative procedure and display device is described in detail.It should be appreciated that following
Described preferred embodiment is only for the purpose of illustrating and explaining the present invention and is not intended to limit the present invention.And in the feelings not conflicted
Under condition, the features in the embodiments and the embodiments of the present application can be combined with each other.Also, it is each layer film thickness in attached drawing, big
Small and shape does not reflect the actual proportions of array substrate, and purpose is schematically illustrate the content of present invention.
A kind of array substrate provided in an embodiment of the present invention, as (Fig. 2 a and Fig. 2 b are only with a pixel list by Fig. 2 a and Fig. 2 b
For member is including a reparation thin film transistor (TFT)) shown in, may include：Multiple pixel lists with switching thin-film transistor 111
Member 110.Also, each pixel unit 110 can also include：At least one reparation thin film transistor (TFT) 112；Wherein, it is brilliant to repair film
Body pipe 112 is used to replace the switching thin-film transistor 111 of defect occur in pixel unit 110.
Above-mentioned array substrate provided in an embodiment of the present invention, when defect occurs in the switching thin-film transistor in pixel unit
When, the embodiment of the present invention can effectively repair the pixel unit by the way that reparation thin film transistor (TFT) is arranged in pixel unit
It is multiple, to replace the switching thin-film transistor for defect occur to work, therefore, repair thin film transistor (TFT) can with faulty restoration, from
And it can be advantageously implemented high-resolution aobvious to avoid dim spotization processing, and then improvement picture display effect is done to pixel unit
Show panel.
In the specific implementation, in embodiments of the present invention, a switching thin-film transistor can be made to be correspondingly arranged at least one
A reparation thin film transistor (TFT).Specifically, a switching thin-film transistor can be made to be correspondingly arranged a reparation thin film transistor (TFT).This
Sample may be used the reparation thin film transistor (TFT) being correspondingly arranged and work instead of it when switching thin-film transistor damages,
And pixel aperture ratio can be improved.Alternatively, a switching thin-film transistor can also be made to be correspondingly arranged 2 reparation film crystals
Pipe, in this way when switching thin-film transistor is all damaged with corresponding 1 reparation thin film transistor (TFT), can also use another
Thin film transistor (TFT) is repaired to work instead of switching thin-film transistor.In practical applications, what is be arranged in each pixel unit repaiies
The quantity of multiple thin film transistor (TFT) can design determination according to practical application.
Further, for unified technique, reducing technique preparation difficulty in embodiments of the present invention can be in each pixel
The reparation thin film transistor (TFT) of identical quantity is set in unit.For example, as shown in Fig. 2 a and Fig. 2 b, it can be in each pixel unit 110
One reparation thin film transistor (TFT) 112 of middle setting.Alternatively, 2 reparation thin film transistor (TFT)s can also be arranged in each pixel unit.When
So, the quantity for the reparation thin film transistor (TFT) being arranged in each pixel unit can be designed according to practical application and be determined, not made herein
It limits.
In TFT-LCD, a switching thin-film transistor is usually set in a general pixel unit, to control data letter
Number input pixel electrode in.In embodiments of the present invention, as shown in Fig. 2 a and Fig. 2 b, one can be arranged in each pixel unit 110
A switching thin-film transistor 111 and a reparation thin film transistor (TFT) 112.
The structure of array substrate provided by the invention is illustrated below by embodiment, but reader should be advised that, knot
Structure is not limited thereto.
Embodiment one,
In the specific implementation, as shown in Figure 2 a, array substrate can also include：A plurality of grid line 120 and multiple data lines
130：In embodiments of the present invention, pixel unit 110 further includes pixel electrode 113；Wherein, it in same pixel unit 110, repaiies
The grid of multiple thin film transistor (TFT) 112 is electrically connected with same grid line 120 with the grid of switching thin-film transistor 111, is repaired thin
The source electrode of film transistor 112 is electrically connected with same data line 130 with the source electrode of switching thin-film transistor 111, repairs film
The drain electrode of transistor 112 is electrically connected with pixel electrode 113 with the drain electrode of switching thin-film transistor 111.It is passed in this way in grid line 120
Under the control of defeated switch scanning signal, the switching thin-film transistor 111 in pixel unit 110 and reparation thin film transistor (TFT) 112
It is both turned on, to generate a plurality of signal path, to which the data-signal that data line 130 transmits is supplied to pixel electrode 113.In picture
When foreign matter, which occurs, in switching thin-film transistor 111 in plain unit 110 leads to occur the defects of short circuit, it can be incited somebody to action by being cut by laser
The switching thin-film transistor 111 is disconnected with the signal wire being electrically connected, and switch film crystal is replaced using thin film transistor (TFT) 112 is repaired
Pipe 111 works.Certainly, there is foreign matter and leads to occur short circuit etc. lacking in the reparation thin film transistor (TFT) 112 in pixel unit 110
When falling into, the reparation thin film transistor (TFT) 112 can be disconnected with the signal wire being electrically connected by being cut by laser, using switch film crystalline substance
Body pipe 111 works.I.e. switching thin-film transistor 111 can be interchanged with thin film transistor (TFT) 112 is repaired.It in this way can also be rear
During phase use, the switching thin-film transistor 111 in some pixel unit and a crystal in reparation thin film transistor (TFT) 112
When pipe damages, another transistor transmission signal may be used, the several of dim spot occur to further decrease pixel unit
Rate.
It, as shown in Figure 2 a, can be by switch film in order to reduce leakage current after by data-signal writing pixel electrode
Transistor 111 is set as double-grid structure.Specifically, switching thin-film transistor 111 may include：First sub switch film crystal
Pipe TFT1 and the second sub switch thin film transistor (TFT) TFT2；Wherein, the grid of the first sub switch thin film transistor (TFT) TFT1 and the second son
The grid of switching thin-film transistor TFT2 is electrically connected with corresponding grid line 120, the source of the first sub switch thin film transistor (TFT) TFT1
Pole is electrically connected with corresponding data line 130, drain electrode and the second sub switch film crystal of the first sub switch thin film transistor (TFT) TFT1
The source electrode of pipe TFT2 is electrically connected, and the drain electrode of the second sub switch thin film transistor (TFT) TFT2 is electrically connected with pixel electrode 113.Certainly, exist
In practical application, switching thin-film transistor may be device of single gate structure, be not limited thereto.
In the specific implementation, in order to reduce leakage current, as shown in Figure 2 a, it can also will repair thin film transistor (TFT) 112 and be arranged
For double-grid structure.Specifically, repairing thin film transistor (TFT) 112 may include：First son repairs thin film transistor (TFT) TFT3 and second
Son repairs thin film transistor (TFT) TFT4；Wherein, the first son repairs the grid of thin film transistor (TFT) TFT3 and the second son repairs film crystal
The grid of pipe TFT4 is electrically connected with corresponding grid line 120, as the grid for repairing thin film transistor (TFT) 112.First son is repaired thin
The source electrode of film transistor TFT3 is electrically connected with corresponding data line 130, as the source electrode for repairing thin film transistor (TFT) 112.First son
The drain electrode for repairing thin film transistor (TFT) TFT3 is electrically connected with the source electrode of the second son reparation thin film transistor (TFT) TFT4, and the second son repairs film
The drain electrode of transistor TFT4 is electrically connected with pixel electrode 113, as the drain electrode for repairing thin film transistor (TFT) 112.Certainly, it is actually answering
In, it may be device of single gate structure to repair thin film transistor (TFT), is not limited thereto.
It further, in the specific implementation, as shown in Figure 2 a, can be brilliant by switching thin-film transistor 111 and reparation film
Body pipe 112 is disposed as double-grid structure.
In the specific implementation, in embodiments of the present invention, switching thin-film transistor and one in reparation thin film transistor (TFT)
Thin film transistor (TFT) can be top gate-type transistors；Or, or bottom-gate-type transistor is not limited thereto.Further,
It is top gate-type transistors that can make reparation thin film transistor (TFT) and switching thin-film transistor；Or can also be bottom gate type crystal
Pipe.
In practical applications, usually thin film transistor (TFT) is arranged on underlay substrate.It is top with switching thin-film transistor
For gate type transistor, as best seen in figs. 3a and 3b, switching thin-film transistor may include：It is set in turn in underlay substrate 100
On active layer 114, grid 115, source electrode 116 and drain electrode 117.Also, it is also set up between active layer 114 and grid 115
There is gate insulation layer 118, interlayer dielectric layer 119 is additionally provided between grid 115 and source-drain electrode 116,117.Wherein, source electrode 116
By being electrically connected with active layer 114 with the via 1161 of interlayer dielectric layer 119 through gate insulation layer 118, drain electrode 117 is by running through
Gate insulation layer 118 is electrically connected with the via 1171 of interlayer dielectric layer 119 with active layer 114.It is double grid in switching thin-film transistor
When the structure of pole, grid 115 may include two sub- grids 1151 and 1152, wherein sub- grid 1151 can be used as the first son
The grid of switching thin-film transistor, sub- grid 1152 can be as the grids of the second sub switch thin film transistor (TFT).
Further, the influence in order to avoid the light of backlight to the channel region of active layer, in the specific implementation, such as Fig. 3 a
Shown in Fig. 3 b, can also include：The light shield layer 120 being set between underlay substrate 100 and active layer 114；Wherein, the shading
Layer 120 covers orthographic projection of the channel region in underlay substrate 100 of active layer 114 in the orthographic projection of underlay substrate 100.Further
Ground as best seen in figs. 3a and 3b, can also include to increase the adhesive force of active layer：It is set to light shield layer 120 and active layer
Buffer layer 121 between 114.In the specific implementation, when it is top gate-type transistors to repair thin film transistor (TFT), structure can join
See the structure of above-mentioned switching thin-film transistor, therefore not to repeat here.
Further, in the specific implementation, as shown in Figure 3a, can also include in array substrate：Positioned at source-drain electrode 116,
117 deviate from the flatness layer 122 and pixel electrode 113 of 100 side of underlay substrate；Wherein, pixel electrode 113 is by running through flatness layer
122 via 1131 is electrically connected with the drain electrode 117 of switching thin-film transistor.It can make to be formed using the array substrate so aobvious
Showing device at least can be TN (Twisted Nematic, twisted-nematic) type TFT-LCD.Wherein, array shown in Fig. 3 a is prepared
The method of substrate can be to be prepared on underlay substrate 100 successively：Light shield layer 120 → buffer layer, 121 → active layer, 114 → grid
118 → grid of insulating layer 115 → 119 → source electrode of interlayer dielectric layer 116 with via 1161,1171 and drain electrode 117 → has
122 → pixel electrode of flatness layer 113 of via 1131.
Further, as shown in Figure 3b, can also include in array substrate：Deviate from substrate base positioned at source-drain electrode 116,117
Flatness layer 122, common electrode layer 123, inter-electrode dielectric layer 124 and the pixel electrode 113 of 100 side of plate；Wherein, pixel electricity
117 electricity of drain electrode that pole 113 passes through via 1132 and switching thin-film transistor through flatness layer 122 and inter-electrode dielectric layer 124
Connection.ADS (Advanced Super Dimension Switch, Senior super dimension field switch technology), FFS may be implemented in this way
The LCD display panel of (Fringe Field Switching, fringe field switching technology) type.Wherein, battle array shown in Fig. 3 b is prepared
The method of row substrate can be to be prepared on underlay substrate 100 successively：120 → buffer layer of light shield layer, 121 → active layer 114 →
118 → grid of gate insulation layer 115 → 119 → source electrode of interlayer dielectric layer 116 with via 1161,1171 and drain electrode 117 → is put down
Smooth 122 → common electrode layer of layer 123 → 124 → pixel electrode of inter-electrode dielectric layer 113 with via 1132.Wherein, pixel
Electrode 113 includes multiple spaced strip shaped electric poles of electrical connection, and common electrode layer 123 is block type electrode, same pixel list
In member, each strip shaped electric poles are located at common electrode layer in the orthographic projection of underlay substrate in the orthographic projection of underlay substrate.Pass through in this way
Strip shaped electric poles are rotated with the spatial electric field driven liquid crystal molecule that common electrode layer is formed, and are advantageously implemented FFS types LCD and are shown
Panel.
Further, difficulty is prepared in order to reduce technique, in the specific implementation, in embodiments of the present invention, can made each
Repair the grid same layer same material of the grid and each switching thin-film transistor of thin film transistor (TFT).A composition work may be used in this way
Skill is formed simultaneously switching thin-film transistor and repairs the grid of thin film transistor (TFT), prepares difficulty so as to reduce technique, reduces
Cost.Further, the grid of each grid line and each grid and each switching thin-film transistor for repairing thin film transistor (TFT) can also be made
Pole same layer same material.
Further, difficulty is prepared in order to reduce technique, in the specific implementation, in embodiments of the present invention, can made each
Repair the active layer same layer same material of the active layer and each switching thin-film transistor of thin film transistor (TFT).A structure may be used in this way
Figure technique is formed simultaneously switching thin-film transistor and repairs the active layer of thin film transistor (TFT), and hardly possible is prepared so as to reduce technique
Degree, reduces cost.
Further, difficulty is prepared in order to reduce technique, in the specific implementation, in embodiments of the present invention, can made each
Repair the source-drain electrode same layer same material of the source-drain electrode and each switching thin-film transistor of thin film transistor (TFT).A structure may be used in this way
Figure technique is formed simultaneously switching thin-film transistor and repairs the drain electrode of thin film transistor (TFT), and difficulty is prepared so as to reduce technique,
Reduce cost.Further, each data line and each source-drain electrode for repairing thin film transistor (TFT) and each switch film can also be made brilliant
The source-drain electrode same layer same material of body pipe.
When prepared by actual production, (Layout) is generally laid out on underlay substrate to form offer of the embodiment of the present invention
Above-mentioned array substrate, wherein in a pixel unit of array substrate shown in Fig. 2 a switching thin-film transistor and repair it is thin
The layout of film transistor is as shown in Figure 4.(i.e. the first sub switch thin film transistor (TFT) TFT1 is opened switching thin-film transistor with the second son
Close thin film transistor (TFT) TFT2) (the i.e. first son repairs of thin film transistor (TFT) TFT3 and second and repairs film with thin film transistor (TFT) is repaired
Transistor TFT4) the setting of 114 same layer of active layer, and active layer 114, using the structure of similar " mouth " font, data line 130 is logical
Via 1161 is electrically connected with active layer 114.Drain electrode 117 is electrically connected by via 1171 with active layer 114.Switch film crystal
It manages and is arranged and is electrically connected with 120 same layer of grid line with the grid 115 for repairing thin film transistor (TFT).Light shield layer 120 is in underlay substrate 100
Orthographic projection covers orthographic projection of the channel region in underlay substrate 100 of active layer 114.
Embodiment two,
In order to reduce power consumption, in the specific implementation, can also make in the grid, source electrode and drain electrode of reparation thin film transistor (TFT)
At least one electrode be in floating.Repair at least one of grid, source electrode and the drain electrode of thin film transistor (TFT) electricity
Pole is not electrically connected with corresponding signal wire and pixel electrode.Switching thin-film transistor in this way in detecting pixel unit
When not occurring the defects of short-circuit caused by foreign matter, signal is transmitted only with switching thin-film transistor, to reduce power consumption.It is detecting
When foreign matter, which occurs, in switching thin-film transistor in pixel unit leads to occur the defects of short circuit, thin film transistor (TFT) will be repaired and be welded to
The corresponding position of signal wire instead of switching thin-film transistor to work.In the specific implementation, the reparation thin film transistor (TFT)
Structure can refer to the structure of above-mentioned reparation thin film transistor (TFT), and therefore not to repeat here.
Specifically, in the specific implementation, in embodiments of the present invention, as shown in Figure 2 b, array substrate can also include：It is more
Grid line 120 and multiple data lines 130：Pixel unit 110 further includes pixel electrode 113；Wherein, switching thin-film transistor 111
Grid be electrically connected with a grid line 120, the source electrode of switching thin-film transistor 111 is electrically connected with a data line 130, switch it is thin
The drain electrode of film transistor 111 is electrically connected with pixel electrode 113.
In the specific implementation, in embodiments of the present invention, as shown in Figure 2 b, grid, the source electrode of thin film transistor (TFT) 111 are repaired
And drain electrode is in floating, that is, repair the grid, source electrode and drain electrode of thin film transistor (TFT) 111 not with corresponding signal
Line and pixel electrode are electrically connected.In same pixel unit 110, when defect occurs in switching thin-film transistor, repair thin
The grid of film transistor 111 is used to be electrically connected with corresponding grid line 120, and source electrode is used to be electrically connected with corresponding data line 120, leakage
Pole is used to be electrically connected with corresponding pixel electrode 113.
In the specific implementation, the grid for only repairing thin film transistor (TFT) is in floating, in embodiments of the present invention, repairs
The source electrode of thin film transistor (TFT) is electrically connected with same data line with the source electrode of switching thin-film transistor, repairs thin film transistor (TFT)
Drain electrode is electrically connected with pixel electrode with the drain electrode of switching thin-film transistor.Also, in same pixel unit, work as switch film
When defect occurs in transistor, the grid for repairing thin film transistor (TFT) is used to be electrically connected with corresponding grid line.
In the specific implementation, the source electrode for only repairing thin film transistor (TFT) is in floating, in embodiments of the present invention, repairs
The grid of thin film transistor (TFT) is electrically connected with same grid line with the grid of switching thin-film transistor, repairs the leakage of thin film transistor (TFT)
Pole is electrically connected with pixel electrode with the drain electrode of switching thin-film transistor.Also, in same pixel unit, when switch film crystalline substance
When defect occurs in body pipe, the source electrode for repairing thin film transistor (TFT) is used to be electrically connected with corresponding data line.
In the specific implementation, the drain electrode for only repairing thin film transistor (TFT) is in floating, in embodiments of the present invention, repairs
The grid of thin film transistor (TFT) is electrically connected with same grid line with the grid of switching thin-film transistor, repairs the source of thin film transistor (TFT)
Pole is electrically connected with same data line with the source electrode of switching thin-film transistor.It is thin when switching also, in same pixel unit
When defect occurs in film transistor, the drain electrode of thin film transistor (TFT) is repaired for being electrically connected with corresponding pixel electrode.Repairing film
When 2 electrodes in the grid of transistor, source electrode and drain electrode are in floating, and so on, therefore not to repeat here.
In the specific implementation, the switching thin-film transistor in the embodiment of the present invention and the structure and reality of repairing thin film transistor (TFT)
Existing mode may refer to embodiment one, be not limited thereto.
Based on same inventive concept, the embodiment of the present invention additionally provides a kind of array substrate provided in an embodiment of the present invention
Restorative procedure, as shown in figure 5, may include steps of：
S501, determine that defect occurs in the switching thin-film transistor in pixel unit；
S502, occur the switching thin-film transistor of defect by laser cutting at the electrical connection in pixel unit, use
Reparation thin film transistor (TFT) in pixel unit replaces the switching thin-film transistor for defect occur to work.
Above-mentioned restorative procedure provided in an embodiment of the present invention, when defect occurs in the switching thin-film transistor in pixel unit
When, the embodiment of the present invention can effectively repair the pixel unit by the way that reparation thin film transistor (TFT) is arranged in pixel unit
It is multiple, to replace the switching thin-film transistor for defect occur to work, therefore, repair thin film transistor (TFT) can with faulty restoration, from
And it can be advantageously implemented high-resolution aobvious to avoid dim spotization processing, and then improvement picture display effect is done to pixel unit
Show panel.
In the specific implementation, there is electrical connection of the switching thin-film transistor of defect in pixel unit by laser cutting
Place, can specifically include：
There is the junction between the grid of the switching thin-film transistor of defect and corresponding grid line by laser cutting；
And/or
There is the junction between the source electrode of the switching thin-film transistor of defect and corresponding data line by laser cutting；
And/or
There is the drain electrode of the switching thin-film transistor of defect and the connection between corresponding pixel electrode by laser cutting
Place.When switching thin-film transistor is device of single gate structure, above-mentioned laser cutting mode may be used the switch for defect occur is thin
Film transistor open circuit.
In the specific implementation, when switching thin-film transistor is double-grid structure, as shown in Fig. 6 a and Fig. 6 b, pass through laser
There is the switching thin-film transistor of defect at the electrical connection in pixel unit in cut-out, can specifically include：
Pass through the junction between the grid and corresponding grid line 120 of laser cutting the first sub switch thin film transistor (TFT) TFT1
a1；And/or
Pass through the junction between the grid and corresponding grid line 120 of laser cutting the second sub switch thin film transistor (TFT) TFT2
a2；And/or
Pass through the connection between the source electrode and corresponding data line 130 of laser cutting the first sub switch thin film transistor (TFT) TFT1
Locate a3；And/or
Drain electrode by laser cutting the first sub switch thin film transistor (TFT) TFT1 and the second sub switch thin film transistor (TFT) TFT2
Source electrode between junction a4；And/or
Drain electrode by laser cutting the second sub switch thin film transistor (TFT) TFT2 and the junction of corresponding pixel electrode 113
a5.When there is foreign matter and leads to occur the defects of short circuit in switching thin-film transistor, may be used above-mentioned cut-out junction a1, a2,
One or more of a3, a4 and a5, so that switching thin-film transistor is short-circuit.
When at least one of grid, source electrode and the drain electrode of reparation thin film transistor (TFT) electrode is in floating, this
Inventive embodiments provide restorative procedure can also include：There is the switching thin-film transistor of defect in pixel by laser cutting
At electrical connection in unit, using the reparation thin film transistor (TFT) in pixel unit replace occurring the switching thin-film transistor of defect into
Row work, can specifically include：
There is the thin film transistor (TFT) of defect at the electrical connection in pixel unit by laser cutting；
It is electrically connected the reparation thin film transistor (TFT) in pixel unit is corresponding with grid, data line and pixel electrode respectively
It connects, to replace the thin film transistor (TFT) for defect occur to work.
Based on same inventive concept, the embodiment of the present invention additionally provides a kind of display device, including the embodiment of the present invention carries
The above-mentioned array substrate supplied.The principle that the display device solves the problems, such as is similar to aforementioned array substrate, therefore the display device
Implementation may refer to the implementation of aforementioned array substrate, and repeating place, details are not described herein.
In the specific implementation, in embodiments of the present invention, display device can also include being oppositely arranged with array substrate
Opposite substrate and the filling liquid crystal layer between two substrates.
In the specific implementation, display device of the embodiment of the present invention can be：Mobile phone, tablet computer, television set, display,
Any product or component with display function such as laptop, Digital Frame, navigator.For the other of the display device
Essential component part is it will be apparent to an ordinarily skilled person in the art that having, and this will not be repeated here, is not also answered
As limitation of the present invention.
Array substrate, its restorative procedure and display device provided in an embodiment of the present invention, when the switch in pixel unit is thin
When defect occurs in film transistor, the embodiment of the present invention can be effectively right by the way that reparation thin film transistor (TFT) is arranged in pixel unit
The pixel unit is repaired, and to replace the switching thin-film transistor for defect occur to work, therefore, repairs thin film transistor (TFT)
So as to avoid doing dim spotization processing to pixel unit, and then picture display effect can be improved with faulty restoration, is conducive to reality
Existing high-resolution display panel.
Obviously, various changes and modifications can be made to the invention without departing from essence of the invention by those skilled in the art
God and range.In this way, if these modifications and changes of the present invention belongs to the range of the claims in the present invention and its equivalent technologies
Within, then the present invention is also intended to include these modifications and variations.
Claims (10)
1. a kind of array substrate, including：Multiple pixel units with switching thin-film transistor；It is characterized in that, each picture
Plain unit further includes：At least one reparation thin film transistor (TFT)；
The reparation thin film transistor (TFT) is used to replace the switching thin-film transistor of defect occur in the pixel unit.
2. array substrate as described in claim 1, which is characterized in that the array substrate further includes：A plurality of grid line and a plurality of
Data line：The pixel unit further includes pixel electrode；
In the same pixel unit, the grid of the grid and the switching thin-film transistor for repairing thin film transistor (TFT) is equal
Be electrically connected with same grid line, the source electrode of source electrode and the switching thin-film transistor for repairing thin film transistor (TFT) with it is same
Data line is electrically connected, the drain electrode for repairing thin film transistor (TFT) and the drain electrode of the switching thin-film transistor with the pixel
Electrode is electrically connected.
3. array substrate as described in claim 1, which is characterized in that it is described repair the grid of thin film transistor (TFT), source electrode and
At least one of drain electrode electrode is in floating.
4. array substrate as claimed in claim 3, which is characterized in that the array substrate further includes：A plurality of grid line and a plurality of
Data line：The pixel unit further includes pixel electrode；Wherein, the grid of the switching thin-film transistor is electrically connected with a grid line
Connect, the source electrode of the switching thin-film transistor is electrically connected with a data line, the drain electrode of the switching thin-film transistor with it is described
Pixel electrode is electrically connected；
The grid for repairing thin film transistor (TFT), source electrode and drain electrode are in floating；In the same pixel unit,
When defect occurs in the switching thin-film transistor, the grid for repairing thin film transistor (TFT) with corresponding grid line for being electrically connected
It connects, source electrode is used to be electrically connected with corresponding data line, and drain electrode with corresponding pixel electrode for being electrically connected.
5. the array substrate as described in claim 2 or 4, which is characterized in that the switching thin-film transistor is double-grid structure,
The switching thin-film transistor includes：First sub switch thin film transistor (TFT) and the second sub switch thin film transistor (TFT)；Wherein, described
The grid of the grid of one sub switch thin film transistor (TFT) and the second sub switch thin film transistor (TFT) is electrically connected with corresponding grid line,
The source electrode of the first sub switch thin film transistor (TFT) is electrically connected with corresponding data line, the first sub switch thin film transistor (TFT)
Drain electrode is electrically connected with the source electrode of the second sub switch thin film transistor (TFT), the drain electrode of the second sub switch thin film transistor (TFT) and institute
State pixel electrode electrical connection；And/or
The reparation thin film transistor (TFT) is double-grid structure, and the reparation thin film transistor (TFT) includes：First son repairs film crystal
Pipe and the second son repair thin film transistor (TFT)；Wherein, first son repairs the grid of thin film transistor (TFT) and second son is repaired
The grid of thin film transistor (TFT) is electrically connected, as the grid for repairing thin film transistor (TFT)；First son repairs thin film transistor (TFT)
Source electrode as it is described repair thin film transistor (TFT) source electrode, it is described first son repair thin film transistor (TFT) drain electrode with it is described second son
The source electrode electrical connection of thin film transistor (TFT) is repaired, second son repairs the drain electrode of thin film transistor (TFT) as the reparation film crystal
The drain electrode of pipe.
6. array substrate as described in claim 1, which is characterized in that it is each it is described repair thin film transistor (TFT) grid with it is each described
The grid same layer same material of switching thin-film transistor；And/or
The active layer same layer same material of each active layer and each switching thin-film transistor for repairing thin film transistor (TFT)；With/
Or,
The source-drain electrode same layer same material of each source-drain electrode and each switching thin-film transistor for repairing thin film transistor (TFT).
7. array substrate as described in claim 1, which is characterized in that a switching thin-film transistor is correspondingly arranged a reparation
Thin film transistor (TFT).
8. a kind of restorative procedure of such as claim 1-7 any one of them array substrates, which is characterized in that including：
Determine that defect occurs in the switching thin-film transistor in pixel unit；
By occurring the switching thin-film transistor of defect described in laser cutting at the electrical connection in the pixel unit, using institute
The reparation thin film transistor (TFT) stated in pixel unit works instead of the switching thin-film transistor for defect occur.
9. restorative procedure as claimed in claim 8, which is characterized in that the switching thin-film transistor be double-grid structure
When, it is described by occurring the switching thin-film transistor of defect described in laser cutting at the electrical connection in the pixel unit, have
Body includes：
Pass through the junction between the grid and corresponding grid line of laser cutting the first sub switch thin film transistor (TFT)；And/or
Pass through the junction between the grid and corresponding grid line of laser cutting the second sub switch thin film transistor (TFT)；And/or
Pass through the junction between the source electrode and corresponding data line of laser cutting the first sub switch thin film transistor (TFT)；And/or
By between the drain electrode of laser cutting the first sub switch thin film transistor (TFT) and the source electrode of the second sub switch thin film transistor (TFT)
Junction；And/or
Drain electrode by laser cutting the second sub switch thin film transistor (TFT) and the junction of corresponding pixel electrode.
10. a kind of display device, which is characterized in that including such as claim 1-7 any one of them array substrate.
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| CN108594553B (en) | 2022-09-09 |
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