CN103680370A - Display device and test circuit repairing method thereof - Google Patents
Display device and test circuit repairing method thereof Download PDFInfo
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- CN103680370A CN103680370A CN201310693323.9A CN201310693323A CN103680370A CN 103680370 A CN103680370 A CN 103680370A CN 201310693323 A CN201310693323 A CN 201310693323A CN 103680370 A CN103680370 A CN 103680370A
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- 238000012360 testing method Methods 0.000 title claims abstract description 72
- 238000000034 method Methods 0.000 title claims abstract description 35
- 239000010409 thin film Substances 0.000 claims abstract description 69
- 230000011218 segmentation Effects 0.000 claims description 127
- 239000010408 film Substances 0.000 claims description 57
- 238000003698 laser cutting Methods 0.000 claims description 35
- 238000005259 measurement Methods 0.000 claims description 12
- 238000001514 detection method Methods 0.000 abstract description 8
- 238000003466 welding Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 17
- 230000002159 abnormal effect Effects 0.000 description 5
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- RGOVYLWUIBMPGK-UHFFFAOYSA-N nonivamide Chemical compound CCCCCCCCC(=O)NCC1=CC=C(O)C(OC)=C1 RGOVYLWUIBMPGK-UHFFFAOYSA-N 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000003019 stabilising effect Effects 0.000 description 1
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/006—Electronic inspection or testing of displays and display drivers, e.g. of LED or LCD displays
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/22—Connection or disconnection of sub-entities or redundant parts of a device in response to a measurement
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
- H01L22/32—Additional lead-in metallisation on a device or substrate, e.g. additional pads or pad portions, lines in the scribe line, sacrificed conductors
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
- H01L27/1244—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits for preventing breakage, peeling or short circuiting
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/88—Dummy elements, i.e. elements having non-functional features
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2330/00—Aspects of power supply; Aspects of display protection and defect management
- G09G2330/08—Fault-tolerant or redundant circuits, or circuits in which repair of defects is prepared
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2330/00—Aspects of power supply; Aspects of display protection and defect management
- G09G2330/10—Dealing with defective pixels
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- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
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Abstract
The embodiment of the invention discloses a display device and a test circuit repairing method thereof. The method includes the steps that A, first connection and second connection are disconnected in a laser cut-off mode, wherein the first connection is that the first input end of a first thin film transistor of the display device is connected with a test signal input line, and the second connection is that the first output end of the first thin film transistor is connected with a test signal output line; B, a first spare wire in the display device is connected with the test signal output line in a laser welding mode, wherein the second input end of a second thin film transistor in the display device is connected with the test signal input line, and the second output end of the second thin film transistor is connected with the first spare wire. According to the display device and the test circuit repairing method thereof, the width to length ratio of the display device can not be changed, and thus display abnormity can be avoided during lighting detection.
Description
[technical field]
The present invention relates to technical field of flat panel display, particularly a kind of display device and measurement circuit restorative procedure thereof.
[background technology]
Traditional display panel detection technique is generally:
As shown in Figure 1, use a thin film transistor (TFT) (TFT, Thin Film Transistor) 100 to be used as switch.Wherein, the drain electrode of this thin film transistor (TFT) 100 (Drain) 102 is connected with sensed signal sources, the source electrode of this thin film transistor (TFT) 100 (Source) 103 is connected with gate line (Gate the Line)/data line (Data Line) in display panel, and the grid of this thin film transistor (TFT) 100 (Gate) 101 is connected with control signal source.
In detection/test process, high level signals (high potential signal) are exported to this grid 101 in this control signal source, thereby open this switch 100,, make this source electrode 103 and these 102 conductings that drain that is.After detect/test finishes, this control signal source is to these grid 101 output low level signals (low-potential signal), thereby closes this switch 100,, cuts off being connected between this testing source and this gate line/data line that is.
In processing procedure, due to the existence of particle (Particle), between the source electrode 103 of above-mentioned thin film transistor (TFT) 100 and drain electrode 102, may be short-circuited, for example, as shown in Figure 2, in region, 104 places are short-circuited.For technique scheme, in the situation that being short-circuited, traditional recovery scenario is:
Use laser to cut off at cutting portion 105 places.
In practice, inventor finds that prior art at least exists following problem:
If one does not repair the above-mentioned circuit being short-circuited (Circuit), or adopt traditional mode to repair the above-mentioned circuit being short-circuited, can make the breadth length ratio (W/L of this thin film transistor (TFT) 100, Width/Length) change, when display panel being lit a lamp to detection, may due to the difference of line impedance, cause picture abnormal, or can be in the phenomenon that occurs line bad (Line Defect), thus erroneous judgement caused, cause unnecessary loss from spoilage.
Two, to such as PSVA(Polymer Stabilized Vertical Alignment, polymer stabilising vertical orientation) display panel of pattern is cured in the process of (Curing), if there is the situation of above-mentioned short circuit between the source electrode 103 of above-mentioned thin film transistor (TFT) 100 and drain electrode 102, when not repairing or use above-mentioned traditional mode to repair, may cause the permanent line of display panel bad.
Therefore, be necessary to propose a kind of new technical scheme, to solve the problems of the technologies described above.
[summary of the invention]
The object of the present invention is to provide a kind of display device and measurement circuit restorative procedure thereof, it can make the breadth length ratio of display device can not change, thereby abnormal rate was can not occur to show when lighting a lamp detection.
For addressing the above problem, the technical scheme of the embodiment of the present invention is as follows:
A display device, comprising: a display panel; Described display panel comprises: a first film transistor array, and described the first film transistor array comprises at least one the first film transistor; One second thin film transistor (TFT) array, described the second thin film transistor (TFT) array comprises at least one the second thin film transistor (TFT); And at least one the first siding; Wherein, the second thin film transistor (TFT) is adjacent described in described the first film transistor AND gate, and described the second thin film transistor (TFT) is connected with described the first siding with test signal input line; In the situation that described the first film transistor is short-circuited, the transistorized first input end of described the first film for by laser cutting mode, disconnect with described test signal input line between first be connected, transistorized the first output terminal of described the first film for by described laser cutting mode, disconnect with test signal output line between second is connected, described the first siding is connected with described test signal output line for passing through laser bonding mode.
In above-mentioned display device, described display panel also comprises: a control signal linear array, and described control signal linear array comprises at least one control signal wire; The second control end of transistorized the first control end of described the first film and described the second thin film transistor (TFT) is all connected with described control signal wire, in the situation that described the first film transistor is short-circuited, described the second control end is for passing through described control signal wire reception control signal.
In above-mentioned display device, the second input end of described the second thin film transistor (TFT) is connected with described test signal input line, and the second output terminal of described the second thin film transistor (TFT) is connected with described the first siding.
In above-mentioned display device, described the first siding comprises the first segmentation, the second segmentation and the 3rd segmentation; Described the second segmentation is between described the first segmentation and described the 3rd segmentation, and described the second segmentation is connected with described the second output terminal; In the situation that described the first film transistor is short-circuited, described the second segmentation is for being connected with described test signal output line by described laser bonding mode, described the first segmentation for by described laser cutting mode, disconnect with described the second segmentation between the 3rd be connected, described the 3rd segmentation for by described laser cutting mode, disconnect with described the second segmentation between the 4th be connected.
In above-mentioned display device, described the first siding comprises the first end and the second end, and described the first end is connected with described the second output terminal, and described the second end is arranged at the opposite side of relatively described the first end of described test signal output line; In the situation that described the first film transistor is short-circuited, described the first siding is connected with described test signal output line by described laser bonding mode.
In above-mentioned display device, described display panel also comprises: at least one the second siding, and described the second siding comprises the 4th segmentation, the 5th segmentation and the 6th segmentation; Described the 5th segmentation is between described the 4th segmentation and described the 6th segmentation, and described the 5th segmentation is connected with described the second input end; In the situation that described the first film transistor is short-circuited, described the 5th segmentation is for being connected with described test signal input line by described laser bonding mode, described the 4th segmentation for by described laser cutting mode, disconnect with described the 5th segmentation between the 5th be connected, described the 6th segmentation for by described laser cutting mode, disconnect with described the 5th segmentation between the 6th be connected.
A kind of measurement circuit restorative procedure of display device, comprise: A, by laser cutting mode, disconnect the first connection and be connected with second, wherein, being connected between the described first transistorized first input end of the first film that is connected to described display device and test signal input line, described second is connected between transistorized the first output terminal of described the first film and test signal output line and is connected; B, the first siding in described display device is connected with described test signal output line by laser bonding mode, wherein, the second input end of the second thin film transistor (TFT) in described display device is connected with described test signal input line, and the second output terminal of described the second thin film transistor (TFT) is connected with described the first siding.
In the measurement circuit restorative procedure of above-mentioned display device, described step B comprises: B1, by described laser bonding mode, the second segmentation of described the first siding is connected with described test signal output line; Described method also comprises: C, disconnect the 3rd connect and the 4th connection by described laser cutting mode, wherein, the described the 3rd is connected to the first segmentation of described the first siding and the connection between described the second segmentation, and the described the 4th is connected to the 3rd segmentation of described the first siding and the connection between described the second segmentation; Wherein, described the second output terminal is connected with described the second segmentation, and described the second segmentation is between described the first segmentation and described the 3rd segmentation.
In the measurement circuit restorative procedure of above-mentioned display device, described method also comprises: D, by described laser bonding mode, described the first siding is connected with described test signal output line; Wherein, described the first siding comprises the first end and the second end, and described the first end is connected with described the second output terminal, and described the second end is arranged at the opposite side of relatively described the first end of described test signal output line.
In the measurement circuit restorative procedure of above-mentioned display device, described method also comprises: E, disconnect the 5th connect and the 6th connection by described laser cutting mode, wherein, the described the 5th is connected to being connected between the 4th segmentation and the 5th segmentation of the second siding of described display device, and the described the 6th is connected to being connected between the 6th segmentation and described the 5th segmentation of the second siding of described display device; F, by described laser bonding mode, described the 5th segmentation is connected with described test signal input line; Wherein, described the 5th segmentation is between described the 4th segmentation and described the 6th segmentation, and described the 5th segmentation is connected with described the second input end.
Relative prior art, the embodiment of the present invention can make the breadth length ratio of display device can not change, thereby can when lighting a lamp detection, not occur to show abnormal, can not judge by accident, can reduce in the curing process of display panel and occur the phenomenon that line is bad simultaneously, that is, be conducive to improve the yield of display panel.
For foregoing of the present invention can be become apparent, preferred embodiment cited below particularly, and coordinate appended graphicly, be described in detail below:
[accompanying drawing explanation]
Fig. 1 is the schematic diagram of the technical scheme that in prior art, display panel detected;
Fig. 2 is the schematic diagram of thin film transistor (TFT) in Fig. 1 recovery scenario when being short-circuited;
Fig. 3 A is the schematic diagram of the first embodiment of display device of the present invention;
Fig. 3 B is the schematic diagram of repair mode in Fig. 3 A;
Fig. 4 A is the schematic diagram of the second embodiment of display device of the present invention;
Fig. 4 B is the schematic diagram of repair mode in Fig. 4 A;
Fig. 5 A is the schematic diagram of the 3rd embodiment of display device of the present invention;
Fig. 5 B is the schematic diagram of repair mode in Fig. 5 A.
[embodiment]
The explanation of following embodiment is graphic with reference to what add, can be in order to the specific embodiment of implementing in order to illustration the present invention.
The word that this instructions is used " embodiment " means as example, example or illustration.Being described as in full " embodiment " any aspect or design needn't be interpreted as more favourable than other aspects or design.On the contrary, the use of word " embodiment " is intended to propose concept in concrete mode.The article using in this instructions and claims " one " usually can be interpreted as meaning " one or more ", knows guiding singulative unless otherwise or from context.
With reference to figure 3A and Fig. 3 B, the schematic diagram of the first embodiment that Fig. 3 A is display device of the present invention, Fig. 3 B is the schematic diagram of repair mode in Fig. 3 A.What Fig. 3 B orbicular spot "●" was corresponding is the position of laser bonding, and intersects “ ╳ " corresponding be the position of laser cutting.
The display device of the present embodiment comprises display panel 300, and wherein, described display panel 300 comprises the first film transistor array, the second thin film transistor (TFT) array and at least one the first siding (Dummy Line) 306.Described the first film transistor array comprises at least one the first film transistor 303, and described the second thin film transistor (TFT) array comprises at least one the second thin film transistor (TFT) 304.The standby thin film transistor (TFT) that described the second thin film transistor (TFT) 304 is described the first film transistors 303 (Dummy Thin Film Transistor), described the second thin film transistor (TFT) 304 for repairing display device/display panel 300 in the situation that short circuit appears in described the first film transistor 303.
Wherein, described the first film transistor 303 is adjacent with described the second thin film transistor (TFT) 304, and described the second thin film transistor (TFT) 304 is connected with described the first siding 306 with test signal input line 301.
In the situation that described the first film transistor 303 is short-circuited, the first input end of described the first film transistor 303 for by laser cutting mode, disconnect with described test signal input line 301 between first be connected, the first output terminal of described the first film transistor 303 for by described laser cutting mode, disconnect with test signal output line 307 between second is connected, described the first siding 306 is connected with described test signal output line 307 for passing through laser bonding mode.Wherein, described first input end is the source/drain of described the first film transistor 303, and accordingly, described the first output terminal is the drain/source of described the first film transistor 303.
Described display panel 300 also comprises control signal linear array, and described control signal linear array comprises at least one control signal wire 302.
The second control end of the first control end of described the first film transistor 303 and described the second thin film transistor (TFT) 304 is all connected with described control signal wire 302, in the situation that described the first film transistor 303 is short-circuited, described the second control end is for passing through described control signal wire 302 reception control signals, to open or close the corresponding switch of the second thin film transistor (TFT) 304 according to described control signal.The second input end of described the second thin film transistor (TFT) 304 is connected with described test signal input line 301, and the second output terminal of described the second thin film transistor (TFT) 304 is connected with described the first siding 306.
In the present embodiment, described the first siding 306 comprises the first segmentation 3061, the second segmentation 3062 and the 3rd segmentation 3063.Wherein, described the second segmentation 3062 is between described the first segmentation 3061 and described the 3rd segmentation 3063, and described the second segmentation 3062 is connected with described the second output terminal.
In the situation that described the first film transistor 303 is short-circuited, described the second segmentation 3062 is for being connected with described test signal output line 307 by described laser bonding mode, described the first segmentation 3061 for by described laser cutting mode, disconnect with described the second segmentation 3062 between the 3rd be connected, described the 3rd segmentation 3063 for by described laser cutting mode, disconnect with described the second segmentation 3062 between the 4th be connected.
In the present embodiment, the mode that display device is repaired is: the thin film transistor (TFT) that cut-out goes wrong (for example, the first film transistor 303 being short-circuited) with the connection of test signal line 301 and data line/gate line (corresponding test signal output line 307) (first connect be connected with second), allow the test signal in test signal line 301 through standby thin film transistor (TFT) (the second thin film transistor (TFT) 304), enter the viewing area of display panel 300 inside, finally the first siding 306 is cut off.After repairing, the path of test signal conducting is as shown in arrow in Fig. 3 B.
The mode that the present embodiment is repaired display device needs to carry out four laser cuttings and a laser bonding altogether.
With reference to figure 4A and Fig. 4 B, the schematic diagram of the second embodiment that Fig. 4 A is display device of the present invention, Fig. 4 B is the schematic diagram of repair mode in Fig. 4 A.The present embodiment is similar to above-mentioned the first embodiment, and difference is:
In the present embodiment, described the first siding 306 comprises the first end and the second end, and described the first end is connected with described the second output terminal, and described the second end is arranged at the opposite side of relatively described the first end of described test signal output line 307.
In the situation that described the first film transistor 303 is short-circuited, described the first siding 306 is connected with described test signal output line 307 by described laser bonding mode.
The mode that the present embodiment is repaired display device needs to carry out twice laser cutting and a laser bonding altogether.
With reference to figure 5A and Fig. 5 B, the schematic diagram of the 3rd embodiment that Fig. 5 A is display device of the present invention, Fig. 5 B is the schematic diagram of repair mode in Fig. 5 A.The present embodiment is similar to the above-mentioned first or second embodiment, and difference is:
In the present embodiment, described display panel 300 also comprises at least one the second siding 305, and described the second siding 305 comprises the 4th segmentation 3051, the 5th segmentation 3052 and the 6th segmentation 3053.Wherein, described the 5th segmentation 3052 is between described the 4th segmentation 3051 and described the 6th segmentation 3053, and described the 5th segmentation 3052 is connected with described the second input end.
In the situation that described the first film transistor 303 is short-circuited, described the 5th segmentation 3052 is for being connected with described test signal input line 301 by described laser bonding mode, described the 4th segmentation 3051 for by described laser cutting mode, disconnect with described the 5th segmentation 3052 between the 5th be connected, described the 6th segmentation 3053 for by described laser cutting mode, disconnect with described the 5th segmentation 3052 between the 6th be connected.
The mode that the present embodiment is repaired display device needs to carry out six laser cuttings and twice laser bonding altogether.
In any one embodiment in the above-mentioned first to the 3rd embodiment, preferably, described the second thin film transistor (TFT) 304 is identical with described the first film transistor 303, and described the second thin film transistor (TFT) 304 is all identical or roughly similar at aspects such as size, attributes with described the first film transistor 303.Therefore,, after stating in the use technical scheme display device being repaired, the impedance of the whole circuit of display device can not change.
In above-mentioned any one embodiment, owing to using the standby thin film transistor (TFT) of described the second thin film transistor (TFT) 304() display device is repaired, therefore can make the breadth length ratio of display device can not change, thereby can when lighting a lamp detection, not occur to show abnormal, can not judge by accident, reduced simultaneously in the curing process of display panel 300 and occurred the phenomenon that line is bad, that is, be conducive to improve the yield of display panel 300.
With reference to figure 3A and Fig. 3 B, the schematic diagram of the first embodiment of the restorative procedure that Fig. 3 A and Fig. 3 B are display device of the present invention.What Fig. 3 B orbicular spot "●" was corresponding is the position of laser bonding, and intersects “ ╳ " corresponding be the position of laser cutting.The measurement circuit restorative procedure of the display device of the present embodiment comprises:
A, by laser cutting mode, disconnect the first connection and be connected with second, wherein, described first is connected to being connected between first input end and the test signal input line 301 of the first film transistor 303 of described display device, between the described second the first output terminal that is connected to described the first film transistor 303 and test signal output line 307, is connected.
B, the first siding 306 in described display device is connected with described test signal output line 307 by laser bonding mode, wherein, the second input end of the second thin film transistor (TFT) 304 in described display device is connected with described test signal input line 301, and the second output terminal of described the second thin film transistor (TFT) 304 is connected with described the first siding 306.
In the present embodiment, described step B comprises:
B1, by described laser bonding mode, the second segmentation 3062 of described the first siding 306 is connected with described test signal output line 307.
In the present embodiment, described method also comprises:
C, by described laser cutting mode, disconnect the 3rd and connect and the 4th connection, wherein, the described the 3rd is connected to the first segmentation 3061 of described the first siding 306 and the connection between described the second segmentation 3062, and the described the 4th is connected to the 3rd segmentation 3063 of described the first siding 306 and the connection between described the second segmentation 3062.
Wherein, described the second output terminal is connected with described the second segmentation 3062, and described the second segmentation 3062 is between described the first segmentation 3061 and described the 3rd segmentation 3063.The second input end of described the second thin film transistor (TFT) 304 is connected with described test signal input line 301, and the second output terminal of described the second thin film transistor (TFT) 304 is connected with described the first siding 306 by described the second segmentation 3062.Described first input end is the source/drain of described the first film transistor 303, and accordingly, described the first output terminal is the drain/source of described the first film transistor 303.
In the present embodiment, in the situation that described the first film transistor 303 is short-circuited, the second control end of described the second thin film transistor (TFT) 304 is by control signal wire 302 reception control signals in described display device, to open or close the corresponding switch of the second thin film transistor (TFT) 304 according to described control signal.
In the present embodiment, described the second thin film transistor (TFT) 304 is the standby thin film transistor (TFT)s as described the first film transistor 303, and described the second thin film transistor (TFT) 304 for repairing display device/display panel 300 in the situation that short circuit appears in described the first film transistor 303.
In the present embodiment, the mode that display device is repaired is: the thin film transistor (TFT) that cut-out goes wrong (for example, the first film transistor 303 being short-circuited) with the connection of test signal line 301 and data line/gate line (corresponding test signal output line 307) (first connect be connected with second), allow the test signal in test signal line 301 through standby thin film transistor (TFT) (the second thin film transistor (TFT) 304), enter the viewing area of display panel 300 inside, finally the first siding 306 is cut off.After repairing, the path of test signal conducting is as shown in arrow in Fig. 3 B.
The mode that the present embodiment is repaired display device needs to carry out four laser cuttings and a laser bonding altogether.
In the present embodiment, precedence is not distinguished in the execution of each step, that is, each step can be carried out according to any order.
With reference to figure 4A and Fig. 4 B, the schematic diagram of the second embodiment of the restorative procedure that Fig. 4 A and Fig. 4 B are display device of the present invention.The present embodiment is similar to above-mentioned the first embodiment, and difference is:
In the present embodiment, described method also comprises:
D, by described laser bonding mode, described the first siding 306 is connected with described test signal output line 307.
Wherein, described the first siding 306 comprises the first end and the second end, and described the first end is connected with described the second output terminal, and described the second end is arranged at the opposite side of relatively described the first end of described test signal output line 307.
The mode that the present embodiment is repaired display device needs to carry out twice laser cutting and a laser bonding altogether.
In the present embodiment, precedence is not distinguished in the execution of each step, that is, each step can be carried out according to any order.
With reference to figure 5A and Fig. 5 B, the schematic diagram of the 3rd embodiment of the restorative procedure that Fig. 5 A and Fig. 5 B are display device of the present invention.The present embodiment is similar to the above-mentioned first or second embodiment, and difference is:
In the present embodiment, described method also comprises:
E, by described laser cutting mode, disconnect the 5th and connect and the 6th connection, wherein, the described the 5th is connected to being connected between the 4th segmentation 3051 and the 5th segmentation 3052 of the second siding 305 of described display device, and the described the 6th is connected to being connected between the 6th segmentation 3053 and described the 5th segmentation 3052 of the second siding 305 of described display device.
F, by described laser bonding mode, described the 5th segmentation 3052 is connected with described test signal input line 301.
Wherein, described the 5th segmentation 3052 is between described the 4th segmentation 3051 and described the 6th segmentation 3053, and described the 5th segmentation 3052 is connected with described the second input end.
The mode that the present embodiment is repaired display device needs to carry out six laser cuttings and twice laser bonding altogether.
In the present embodiment, precedence is not distinguished in the execution of each step, that is, each step can be carried out according to any order.
In any one embodiment in the above-mentioned first to the 3rd embodiment, preferably, described the second thin film transistor (TFT) 304 is identical with described the first film transistor 303, and described the second thin film transistor (TFT) 304 is all identical or roughly similar at aspects such as size, attributes with described the first film transistor 303.Therefore,, after stating in the use technical scheme display device being repaired, the impedance of the whole circuit of display device can not change.
In above-mentioned any one embodiment, owing to using the standby thin film transistor (TFT) of described the second thin film transistor (TFT) 304() display device is repaired, therefore can make the breadth length ratio of display device can not change, thereby can when lighting a lamp detection, not occur to show abnormal, can not judge by accident, reduced simultaneously in the curing process of display panel 300 and occurred the phenomenon that line is bad, that is, be conducive to improve the yield of display panel 300.
Although illustrate and described the present invention with respect to one or more implementations, those skilled in the art are based on expecting equivalent variations and modification to the reading of this instructions and accompanying drawing and understanding.The present invention includes all such modifications and modification, and only by the scope of claims, limited.In addition, although the special characteristic of this instructions with respect in some implementations only one be disclosed, this feature can with as can for given or application-specific, be one or more other Feature Combinations of expectation and favourable other implementations.And, with regard to term " comprise ", with regard to " having ", " containing " or its distortion be used in embodiment or claim, such term is intended to comprise " to comprise " similar mode to term.
In sum; although the present invention discloses as above with preferred embodiment; but above preferred embodiment is not in order to limit the present invention; those of ordinary skill in the art; without departing from the spirit and scope of the present invention; all can do various changes and retouching, so the scope that protection scope of the present invention defines with claim is as the criterion.
Claims (10)
1. a display device, comprising:
One display panel;
It is characterized in that, described display panel comprises:
One the first film transistor array, described the first film transistor array comprises at least one the first film transistor;
One second thin film transistor (TFT) array, described the second thin film transistor (TFT) array comprises at least one the second thin film transistor (TFT); And
At least one the first siding;
Wherein, the second thin film transistor (TFT) is adjacent described in described the first film transistor AND gate, and described the second thin film transistor (TFT) is connected with described the first siding with test signal input line;
In the situation that described the first film transistor is short-circuited, the transistorized first input end of described the first film for by laser cutting mode, disconnect with described test signal input line between first be connected, transistorized the first output terminal of described the first film for by described laser cutting mode, disconnect with test signal output line between second is connected, described the first siding is connected with described test signal output line for passing through laser bonding mode.
2. display device according to claim 1, is characterized in that, described display panel also comprises:
One control signal linear array, described control signal linear array comprises at least one control signal wire;
The second control end of transistorized the first control end of described the first film and described the second thin film transistor (TFT) is all connected with described control signal wire, in the situation that described the first film transistor is short-circuited, described the second control end is for passing through described control signal wire reception control signal.
3. display device according to claim 2, is characterized in that, the second input end of described the second thin film transistor (TFT) is connected with described test signal input line, and the second output terminal of described the second thin film transistor (TFT) is connected with described the first siding.
4. display device according to claim 3, is characterized in that, described the first siding comprises the first segmentation, the second segmentation and the 3rd segmentation;
Described the second segmentation is between described the first segmentation and described the 3rd segmentation, and described the second segmentation is connected with described the second output terminal;
In the situation that described the first film transistor is short-circuited, described the second segmentation is for being connected with described test signal output line by described laser bonding mode, described the first segmentation for by described laser cutting mode, disconnect with described the second segmentation between the 3rd be connected, described the 3rd segmentation for by described laser cutting mode, disconnect with described the second segmentation between the 4th be connected.
5. display device according to claim 3, it is characterized in that, described the first siding comprises the first end and the second end, and described the first end is connected with described the second output terminal, and described the second end is arranged at the opposite side of relatively described the first end of described test signal output line;
In the situation that described the first film transistor is short-circuited, described the first siding is connected with described test signal output line by described laser bonding mode.
6. display device according to claim 3, is characterized in that, described display panel also comprises:
At least one the second siding, described the second siding comprises the 4th segmentation, the 5th segmentation and the 6th segmentation;
Described the 5th segmentation is between described the 4th segmentation and described the 6th segmentation, and described the 5th segmentation is connected with described the second input end;
In the situation that described the first film transistor is short-circuited, described the 5th segmentation is for being connected with described test signal input line by described laser bonding mode, described the 4th segmentation for by described laser cutting mode, disconnect with described the 5th segmentation between the 5th be connected, described the 6th segmentation for by described laser cutting mode, disconnect with described the 5th segmentation between the 6th be connected.
7. a measurement circuit restorative procedure for display device as claimed in claim 1, is characterized in that, comprising:
A, by laser cutting mode, disconnect the first connection and be connected with second, wherein, being connected between the described first transistorized first input end of the first film that is connected to described display device and test signal input line, described second is connected between transistorized the first output terminal of described the first film and test signal output line and is connected;
B, the first siding in described display device is connected with described test signal output line by laser bonding mode, wherein, the second input end of the second thin film transistor (TFT) in described display device is connected with described test signal input line, and the second output terminal of described the second thin film transistor (TFT) is connected with described the first siding.
8. the measurement circuit restorative procedure of display device according to claim 7, is characterized in that, described step B comprises:
B1, by described laser bonding mode, the second segmentation of described the first siding is connected with described test signal output line;
Described method also comprises:
C, by described laser cutting mode, disconnect the 3rd and connect and the 4th connection, wherein, the described the 3rd is connected to the first segmentation of described the first siding and the connection between described the second segmentation, and the described the 4th is connected to the 3rd segmentation of described the first siding and the connection between described the second segmentation;
Wherein, described the second output terminal is connected with described the second segmentation, and described the second segmentation is between described the first segmentation and described the 3rd segmentation.
9. the measurement circuit restorative procedure of display device according to claim 7, is characterized in that, described method also comprises:
D, by described laser bonding mode, described the first siding is connected with described test signal output line;
Wherein, described the first siding comprises the first end and the second end, and described the first end is connected with described the second output terminal, and described the second end is arranged at the opposite side of relatively described the first end of described test signal output line.
10. the measurement circuit restorative procedure of display device according to claim 7, is characterized in that, described method also comprises:
E, by described laser cutting mode, disconnect the 5th and connect and the 6th connection, wherein, the described the 5th is connected to being connected between the 4th segmentation and the 5th segmentation of the second siding of described display device, and the described the 6th is connected to being connected between the 6th segmentation and described the 5th segmentation of the second siding of described display device;
F, by described laser bonding mode, described the 5th segmentation is connected with described test signal input line;
Wherein, described the 5th segmentation is between described the 4th segmentation and described the 6th segmentation, and described the 5th segmentation is connected with described the second input end.
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310693323.9A CN103680370A (en) | 2013-12-17 | 2013-12-17 | Display device and test circuit repairing method thereof |
| GB1604875.3A GB2534317B (en) | 2013-12-17 | 2013-12-30 | Display device and testing line repairing method thereof |
| KR1020167010222A KR101894523B1 (en) | 2013-12-17 | 2013-12-30 | Display device and test line repair method therefor |
| EA201690996A EA031911B1 (en) | 2013-12-17 | 2013-12-30 | Display device and test line repair method therefor |
| PCT/CN2013/090821 WO2015089878A1 (en) | 2013-12-17 | 2013-12-30 | Display device and test line repair method therefor |
| JP2016526832A JP2016538590A (en) | 2013-12-17 | 2013-12-30 | Display device and test line repair method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310693323.9A CN103680370A (en) | 2013-12-17 | 2013-12-17 | Display device and test circuit repairing method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103680370A true CN103680370A (en) | 2014-03-26 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201310693323.9A Pending CN103680370A (en) | 2013-12-17 | 2013-12-17 | Display device and test circuit repairing method thereof |
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| Country | Link |
|---|---|
| JP (1) | JP2016538590A (en) |
| KR (1) | KR101894523B1 (en) |
| CN (1) | CN103680370A (en) |
| EA (1) | EA031911B1 (en) |
| GB (1) | GB2534317B (en) |
| WO (1) | WO2015089878A1 (en) |
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| CN107884693A (en) * | 2017-11-06 | 2018-04-06 | 武汉华星光电半导体显示技术有限公司 | Electrical characteristics test method |
| CN109741699A (en) * | 2019-01-22 | 2019-05-10 | 深圳市华星光电技术有限公司 | Detection device for display panel |
| US10565912B2 (en) | 2017-11-06 | 2020-02-18 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Electrical characteristics inspection method |
| CN111798779A (en) * | 2019-07-26 | 2020-10-20 | 友达光电股份有限公司 | Spare circuit system for flexible display panel and automatic switching method thereof |
| CN113516917A (en) * | 2021-05-26 | 2021-10-19 | 京东方科技集团股份有限公司 | Display panel, display device and broken line repairing method |
| WO2022068655A1 (en) * | 2020-09-30 | 2022-04-07 | 荣耀终端有限公司 | Display device, drive chip, and electronic device |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111203631A (en) * | 2020-03-12 | 2020-05-29 | 苏州晶振智能科技有限公司 | Intelligent detection laser repair method for display screen |
| CN112289836B (en) * | 2020-10-26 | 2023-05-02 | 武汉天马微电子有限公司 | Display panel and display device |
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Also Published As
| Publication number | Publication date |
|---|---|
| KR101894523B1 (en) | 2018-09-04 |
| KR20160060106A (en) | 2016-05-27 |
| EA031911B1 (en) | 2019-03-29 |
| GB2534317A (en) | 2016-07-20 |
| JP2016538590A (en) | 2016-12-08 |
| GB2534317B (en) | 2020-12-09 |
| GB201604875D0 (en) | 2016-05-04 |
| EA201690996A1 (en) | 2016-10-31 |
| WO2015089878A1 (en) | 2015-06-25 |
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