CN100508228C - 一种白光led灯的制造方法及采用该方法的led灯 - Google Patents

一种白光led灯的制造方法及采用该方法的led灯 Download PDF

Info

Publication number
CN100508228C
CN100508228C CNB2007100273155A CN200710027315A CN100508228C CN 100508228 C CN100508228 C CN 100508228C CN B2007100273155 A CNB2007100273155 A CN B2007100273155A CN 200710027315 A CN200710027315 A CN 200710027315A CN 100508228 C CN100508228 C CN 100508228C
Authority
CN
China
Prior art keywords
led lamp
blue light
white led
green
emitting phosphor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB2007100273155A
Other languages
English (en)
Other versions
CN101097977A (zh
Inventor
樊邦弘
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Guangdong Yinyu Chip Semiconductor Co., Ltd.
Original Assignee
Heshan Lide Electronic Enterprise Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Heshan Lide Electronic Enterprise Co Ltd filed Critical Heshan Lide Electronic Enterprise Co Ltd
Priority to CNB2007100273155A priority Critical patent/CN100508228C/zh
Priority to PCT/CN2007/001751 priority patent/WO2008116352A1/zh
Publication of CN101097977A publication Critical patent/CN101097977A/zh
Application granted granted Critical
Publication of CN100508228C publication Critical patent/CN100508228C/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H01L33/504—Elements with two or more wavelength conversion materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8592—Applying permanent coating, e.g. protective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

本发明公开了一种白光LED灯的制造方法及采用该方法的LED灯，包括一杯体，在杯体内固定一发光波长为430～480nm的蓝光晶片，蓝光晶片外再涂覆红色荧光粉和绿色荧光粉；本发明的改进之处在于，所述红色荧光粉和绿色荧光粉分为两层分别涂覆在所述蓝光晶片外，从而，当在制造过程中测试得某一些产品产生偏绿或偏红的色差后，可以根据色差的偏向再涂一层红色荧光粉或绿色荧光粉作为修正，大大的提高了产品的合格率；本发明可应用于各种混光LED灯的制造中。

Description

一种白光LED灯的制造方法及采用该方法的LED灯
技术领域
本发明涉及一种LED灯的制造方法，特别涉及一种白光LED灯的制造方法。
本发明还涉及一种LED照明器具，特别涉及一种白光LED灯。
背景技术
LED来自英文LIGHT EMITTING DIODE的缩写，意为发光二极管。最简单的发光二极管的结构包括，P-型半导体、N-型半导体及两者之间所形成的PN结，当电流通过二极管时，在上述PN结处，便产生电荷载子，即电子与空穴，电子与空穴结合并以光子的形式释放出能量，在PN结处加入特定的半导体化学物，则可使二极管发出特定颜色的光，如加入氮化铟镓(In0.2Ga0.8N)可产生纯蓝光，加入氮化镓(GaN)可产生绿光等，将发光二极管封装并从封装体内引出发光二极管的正负两极以连接电源即构成LED灯。与普通的钨丝灯，荧光灯等白光灯相比，LED灯有寿命长、省电、耐用、牢靠、反应快、低废热和适合于批量生产等优点。
但是，在普通的照明场合，有颜色的LED灯光却会使物体看起来变了颜色，不如白光灯能真实反映物体的颜色，因此开发出适于普通照明场合使用的优质的白光LED灯，一直是业内同行追求的目标。在现有技术中，LED灯所发出的白光是先使LED产生几种不同波长的光，再利用透镜的原理将几种波长不同的光按一定的强度比例混合而成，例如用蓝光与黄光混成白光，或用红、绿、蓝三色光混成白光。目前LED灯市场上制造白光或类白光的方法可以有以下几种：
1、将红、绿、蓝三基色发光二极管封装在一个灯泡内，外加电路调整三基色发光二极管的的功率，即可混出白光，采用这种结构的LED灯需要分别对三个发光二极管的功率进行独立控制，这样就使得外围电路的设计非常复杂，成本极高。
2、使用蓝光和红光二极管，然后在两发光二极管外覆盖黄色荧光粉，蓝光二极管发出的蓝光照射到黄色荧光粉上后，一部分蓝光穿过黄色荧光粉，一部分留在荧光粉内激发黄光，所述蓝光、黄光和红光二极管发出的红光混合成白光。采用这种结构的LED灯，由于蓝光和红光二极管两者所需的工作电压差别较大，若两者用串联连接则需要较高的总电压，不利于使用；若用并联则需要在其中一个二极管上串联电阻，这样就增加了制程工艺复杂程度，增加产品成本。
3、使用一个发紫外线二极管，在该发光二极管外覆盖红、绿、蓝三色荧光粉，利用紫外线照射到红、绿、蓝三色荧光粉上产生红、绿、蓝三色光混合成白光，由于紫外线激发红、绿、蓝三色荧光粉后会放出比较大的能量，促进了荧光粉的老化，降低产品的寿命，更为严重的是紫外线激发红、绿、蓝三色荧光粉后还会释放出对人体有害的物质。最近，申请号为02124450.2的发明专利公开了一种制造白光LED的制造方法，其发光源为一波长为430~480nm的蓝光晶片，该晶片外涂覆包含一定比例的绿色和红色混合荧光粉，该混合荧光粉吸收部分蓝光，激发出红光和绿光，所述的红光和绿光与蓝光混合成白光。该专利使得白光LED的成本有所下降，也不会产生对人体有害的物质。但是，由于其荧光粉是由红绿两种荧光粉混合而成的，一者在混合的过程中，难以保证混合充分均匀，二者随放置时间的延长，混合好的荧光粉还会有沉淀等情况，这样，就可能致使同一批配料生产出来的LED红绿荧光粉的比例都有所不同，从而造成同一批LED都会有一定的色差，由于荧光粉已经按预定的比例调好，该色差也就无法调整，对于色差严重的LED就只能当作废品丢弃了或转用到其他低要求的场合了，所以采用该制造方法制造的LED灯产品合格率不高。
发明内容
本发明要解决的技术问题是：提供一种在制造过程中可调整色差，产品合格率高的白光LED灯的制造方法。
此外，本发明解决的另一个技术问题是，提供一种由上述方法所制造得的白光LED灯。
对于本发明的一种白光LED灯的制造方法来说，其技术问题是通过这样的技术方案来解决的：先提供一杯体；再在杯体内固定一发光峰值波长为430~480nm的蓝光晶片；然后再将与胶水混合好的红色荧光粉和绿色荧光粉分别涂敷于所述蓝光晶片上，最后将胶水烤干凝固。
对于本发明的一种白光LED灯来说，其技术问题是通过这样的技术方案来解决的：包括一杯体，杯体内有发光波长为430~480nm的蓝光晶片和覆盖所述蓝光晶片的红色荧光粉和绿色荧光粉，所述红色荧光粉和绿色荧光粉为两层独立的涂层。
本发明的有益效果是：由于红色荧光粉和绿色荧光粉分为两层分别涂覆在所述蓝光晶片外，所以当在制造过程中测试得某一些产品产生偏绿或偏红的色差后，可以根据色差的偏向再涂一层红色荧光粉或绿色荧光粉作为修正，这样，就大大的提高了产品的合格率。
此外，本发明的一种白光LED灯的制造方法还可以通过以下技术方案做进一步改进：
所述蓝光晶片外先涂覆绿色荧光粉，再在绿色荧光粉外涂覆红色荧光粉，所述绿色荧光粉包覆所述蓝光晶片，所述红色荧光粉包覆所述绿色荧光粉。这样，就可以利用低能量的蓝光来激发相对能量较高的绿光，然后部分穿过绿色荧光粉的蓝光和绿色荧光粉激发的绿光共同激发能量更高的红光，使红光的激发效果更好。
本发明的一种白光LED灯还可以通过以下技术方案做进一步改进：
所述蓝光晶片的发光峰值波长为450~480nm。
所述绿色荧光粉的受激发光峰值波长为510~540nm。
所述红色荧光粉的受激发光峰值波长为600~630nm。
实验表明，采用上述波长范围内的二极管晶片和荧光粉，灯光效果更加接近正白光。
附图说明
下面结合附图和实施例对本发明做进一步说明，
图1是本发明的结构示意图之一；
图2是本发明的结构示意图之二；
图3是本发明所发出白光的发射频谱图；
具体实施方式
以贴片式的LED为例，参考图1，本发明选用发光波长为430~480nm的蓝光晶片2作为发光源，将该蓝光晶片2粘结在一杯体1中，用电极线5将蓝光晶片2的电极与外部电路做电连接，然后将与胶水配置好的红色荧光粉4和绿色荧光粉3按一定的比例分别涂覆到杯体1中，包覆所述的蓝光晶片1，最后用电炉将胶水烤干或放置自然风干。蓝光晶片1通电后发出波长为430~480nm的蓝光，该蓝光部分被红色荧光粉4和绿色荧光粉3吸收并激发出红光和绿光，该红光和绿光再与未被吸收的蓝光混合，形成具有三基色的白光，该白光的光谱图参见图3。由于覆过程中难以精确控制红色荧光粉4和绿色荧光粉3的比例，当红色荧光粉4成分过多时，混合的白光会稍微偏红，而当绿色荧光分3成分过多时，混合的白光就会稍微偏绿，这时，可以通过在荧光粉外再涂上少量的绿色荧光粉或红色荧光粉来修正色偏，达到理想的效果。若一开始就将红绿两种荧光粉混合再涂覆到蓝光晶片1上，产品产生色偏后就无法修正了。
在涂覆荧光粉的过程中，宜先涂绿色荧光粉3，再在绿色荧光粉3上涂覆红色荧光粉4，因为绿色荧光粉3的能量较红色荧光粉4的能量低，这就使得红色荧光粉4在吸收蓝光激发的同时，可以再吸收绿色荧光粉3激发出的绿光激发红光，使红色荧光粉4的激发效果更好。
经发明人的多次实验测得，当选取发光波长为450~480nm的蓝光晶片2，激发光波长为510~540nm的绿色荧光粉3，激发的光波长为600~630nm的红色荧光粉4时，比较容易混合成正白光，光斑较均匀。
当然，所述的制造方法也可以应用在灯型的LED中，如图2所示，其制造方法基本与贴片式的LED相同，不同之处在于，在涂覆完两种荧光粉，并将白光修正到要求的色度后，再用封装胶体6将所述的杯体1、蓝光晶片2和红绿荧光粉封装保护。

Claims (9)

1、一种白光LED灯的制造方法，其特征在于包括以下步骤：先提供一杯体(1)；再在杯体(1)内固定一发光峰值波长为430~480nm的蓝光晶片(2)；然后再将与胶水混合好的红色荧光粉(4)和绿色荧光粉(3)分别涂敷于所述蓝光晶片(2)上，最后将胶水烤干凝固。
2、根据权利要求1所述的一种白光LED灯的制造方法，其特征在于：在涂敷荧光粉的过程中，先将绿色荧光粉(3)涂敷于所述蓝光晶片(2)上，然后再将红色荧光粉(4)涂覆于绿色荧光粉(3)上。
3、由权利要求1所述的方法制得的一种白光LED灯，包括一杯体(1)，杯体(1)内有发光波长为430~480nm的蓝光晶片(2)和覆盖所述蓝光晶片(2)的红色荧光粉(4)和绿色荧光粉(3)，其特征在于：所述红色荧光粉(4)和绿色荧光粉(3)为两层独立的涂层。
4、根据权利要求3所述的一种白光LED灯，其特征在于：所述蓝光晶片(2)、红色荧光粉(4)和绿色荧光粉(3)在杯体(1)内的结构顺序为，蓝光晶片(2)置于中心，往外依次为绿色荧光粉(3)和红色荧光粉(4)
5、根据权利要求3所述的一种白光LED灯，其特征在于：所述蓝光晶片(2)的发光峰值波长为450~480nm。
6、根据权利要求3所述的一种白光LED灯，其特征在于：所述绿色荧光粉层(3)的受激发光峰值波长为510~540nm。
7、根据权利要求3所述的一种白光LED灯，其特征在于：所述红色荧光粉层(4)的受激发光峰值波长为600~630nm。
8、根据权利要求3所述的一种白光LED灯，其特征在于：所述杯体(1)由一封装胶体(6)封装。
9、根据权利要求8所述的一种白光LED灯，其特征在于：所述的封装体(6)为灯型或贴片型。
CNB2007100273155A 2007-03-26 2007-03-26 一种白光led灯的制造方法及采用该方法的led灯 Expired - Fee Related CN100508228C (zh)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CNB2007100273155A CN100508228C (zh) 2007-03-26 2007-03-26 一种白光led灯的制造方法及采用该方法的led灯
PCT/CN2007/001751 WO2008116352A1 (fr) 2007-03-26 2007-06-01 Procédé de production d'une lampe del à lumière blanche et lampe del ainsi obtenue

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CNB2007100273155A CN100508228C (zh) 2007-03-26 2007-03-26 一种白光led灯的制造方法及采用该方法的led灯

Publications (2)

Publication Number Publication Date
CN101097977A CN101097977A (zh) 2008-01-02
CN100508228C true CN100508228C (zh) 2009-07-01

Family

ID=39011601

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2007100273155A Expired - Fee Related CN100508228C (zh) 2007-03-26 2007-03-26 一种白光led灯的制造方法及采用该方法的led灯

Country Status (2)

Country Link
CN (1) CN100508228C (zh)
WO (1) WO2008116352A1 (zh)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101749653B (zh) * 2008-12-11 2012-03-14 富士迈半导体精密工业（上海）有限公司 荧光粉涂布方法
CN101937963A (zh) * 2010-08-19 2011-01-05 深圳市洲明科技股份有限公司 Led发光单元及其封装方法
CN102064240B (zh) * 2010-09-30 2016-01-27 福建省万邦光电科技有限公司 白光led光源模块的封装工艺
CN102454879B (zh) * 2010-10-20 2015-06-24 福建省万邦光电科技有限公司 Led球泡灯
CN102537718A (zh) * 2011-11-11 2012-07-04 深圳市瑞丰光电子股份有限公司 光源与散热器一体式灯具及其制造方法
CN103606619A (zh) * 2013-11-30 2014-02-26 中山达华智能科技股份有限公司 一种促进植物生长用近紫外发光二极管及其制备方法
CN104644117A (zh) * 2015-02-17 2015-05-27 杭州爱光医疗器械有限公司 与一次性无菌阴道扩张器配合使用的医用冷光源及其应用
CN105304804B (zh) * 2015-11-12 2018-09-14 深圳莱特光电股份有限公司 一种前段分光的led光源模组及其制备方法
CN110081323B (zh) * 2018-05-23 2021-08-31 浙江山蒲照明电器有限公司 Led灯丝及led球泡灯
CN111146324A (zh) * 2019-11-25 2020-05-12 华中科技大学鄂州工业技术研究院 一种超高显色指数白光led器件

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003133595A (ja) * 2001-10-24 2003-05-09 Seiwa Electric Mfg Co Ltd 発光ダイオードランプ、これに用いられる赤色蛍光体及びこれに用いられるフィルタ
CN1208847C (zh) * 2002-06-26 2005-06-29 诠兴开发科技股份有限公司 三波长白光发光二极管的制造方法
CN2713647Y (zh) * 2004-07-27 2005-07-27 葛世潮 功率型白光发光二极管
KR100540848B1 (ko) * 2004-01-02 2006-01-11 주식회사 메디아나전자 이중 몰드로 구성된 백색 발광다이오드 소자 및 그 제조방법
US7598663B2 (en) * 2005-08-04 2009-10-06 Taiwan Oasis Technology Co., Ltd. Multi-wavelength LED provided with combined fluorescent materials positioned over and underneath the LED component

Also Published As

Publication number Publication date
CN101097977A (zh) 2008-01-02
WO2008116352A1 (fr) 2008-10-02

Similar Documents

Publication Publication Date Title
CN100508228C (zh) 一种白光led灯的制造方法及采用该方法的led灯
CN108305929B (zh) 具有高显色性的白光发光装置
US20200126958A1 (en) Light source with tunable cri
TW201943102A (zh) 用於失活微生物之多光發射器
CN103779346B (zh) 一种近紫外或紫光激发的led发光装置
JP2009524247A5 (zh)
US20070045641A1 (en) Light source with UV LED and UV reflector
CN111180427B (zh) 一种光谱调光封装结构及其制作方法
TW200537713A (en) Light emitting device and lighting fixture
WO2011084131A1 (en) Saturated yellow phosphor converted led and blue converted red led
WO2005098972A1 (en) Light emitting device and phosphor for the same
RU2691638C2 (ru) Осветительное устройство, светодиодная полоска, светильник и способ изготовления осветительного устройства
CN101123834B (zh) 一种led的制造方法
US7851990B2 (en) Method for generating low color temperature light and light emitting device adopting the same
CN102192424A (zh) 发光装置以及照明装置
CN101694863A (zh) 高显色指数白光led的制作方法
JP4729281B2 (ja) 発光ダイオード及び発光ダイオード製造方法
CN102916005A (zh) 基于绿光芯片补偿的高显色led光源
CN101022102A (zh) 一种可发白光的led灯
KR101164368B1 (ko) 발광다이오드 패키지 및 이의 제조방법
CN201017902Y (zh) 一种低色温暖光发光装置
CN101060151A (zh) 一种led合成白光的方法
JP2009064999A (ja) 低色温度光を生成する方法及びその方法を用いた光放出装置
CN101050850A (zh) 一种合成低色温暖光的方法和采用该方法的发光装置
CN112216683A (zh) 发光二极管混光结构

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
ASS Succession or assignment of patent right

Owner name: GUANGDONG YINYU SEMICONDUCTOR CO., LTD.

Free format text: FORMER OWNER: HESHAN LIDE ELECTRONIC INDUSTRY CO., LTD.

Effective date: 20110117

C41 Transfer of patent application or patent right or utility model
COR Change of bibliographic data

Free format text: CORRECT: ADDRESS; FROM: 529728 NO.301, XIANGHE ROAD, GONGHE TOWN, HESHAN CITY, GUANGDONG PROVINCE TO: 529700 NO.1, KEYUAN WEST ROAD, HIGH-TECH ZONE, JIANGMEN CITY, GUANGDONG PROVINCE

TR01 Transfer of patent right

Effective date of registration: 20110117

Address after: High tech Zone of Guangdong city in Jiangmen province 529700 Keyuan Road No. 1

Patentee after: Guangdong Yinyu Chip Semiconductor Co., Ltd.

Address before: 529728 Guangdong City, Heshan Province town of peace road, No. 301

Patentee before: Heshan Lide Electronic Industry Co., Ltd.

CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20090701

Termination date: 20160326