CN100495704C - 具有体接触的并联场效应晶体管结构及集成电路 - Google Patents

具有体接触的并联场效应晶体管结构及集成电路 Download PDF

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Publication number
CN100495704C
CN100495704C CNB2006800085198A CN200680008519A CN100495704C CN 100495704 C CN100495704 C CN 100495704C CN B2006800085198 A CNB2006800085198 A CN B2006800085198A CN 200680008519 A CN200680008519 A CN 200680008519A CN 100495704 C CN100495704 C CN 100495704C
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China
Prior art keywords
region
gate conductor
conductor portion
fet
monolithic
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Expired - Fee Related
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CNB2006800085198A
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English (en)
Chinese (zh)
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CN101142679A (zh
Inventor
J·D·沃诺克
G·E·史密斯三世
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Core Usa Second LLC
GlobalFoundries Inc
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International Business Machines Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6708—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device for preventing the kink effect or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect
    • H10D30/6711—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device for preventing the kink effect or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect by using electrodes contacting the supplementary regions or layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 

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  • Thin Film Transistor (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Bipolar Transistors (AREA)
CNB2006800085198A 2005-04-15 2006-04-13 具有体接触的并联场效应晶体管结构及集成电路 Expired - Fee Related CN100495704C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/907,796 US7084462B1 (en) 2005-04-15 2005-04-15 Parallel field effect transistor structure having a body contact
US10/907,796 2005-04-15

Publications (2)

Publication Number Publication Date
CN101142679A CN101142679A (zh) 2008-03-12
CN100495704C true CN100495704C (zh) 2009-06-03

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2006800085198A Expired - Fee Related CN100495704C (zh) 2005-04-15 2006-04-13 具有体接触的并联场效应晶体管结构及集成电路

Country Status (8)

Country Link
US (1) US7084462B1 (https=)
EP (1) EP1872402B1 (https=)
JP (1) JP4395192B2 (https=)
CN (1) CN100495704C (https=)
AT (1) ATE454714T1 (https=)
DE (1) DE602006011595D1 (https=)
TW (1) TWI372461B (https=)
WO (1) WO2006113395A2 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011097883A1 (zh) * 2010-02-09 2011-08-18 中国科学院微电子研究所 一种体接触器件结构及其制造方法

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8035140B2 (en) 2007-07-26 2011-10-11 Infineon Technologies Ag Method and layout of semiconductor device with reduced parasitics
US8921190B2 (en) 2008-04-08 2014-12-30 International Business Machines Corporation Field effect transistor and method of manufacture
US7893494B2 (en) * 2008-06-18 2011-02-22 International Business Machines Corporation Method and structure for SOI body contact FET with reduced parasitic capacitance
CN103258813B (zh) * 2013-04-24 2016-08-24 上海华虹宏力半导体制造有限公司 部分耗尽soi mosfet的测试结构及其形成方法
US8933746B1 (en) 2013-07-10 2015-01-13 Astronics Advanced Electronic Systems Corp. Parallel FET solid state relay utilizing commutation FETs
FR3038775A1 (fr) 2015-07-09 2017-01-13 St Microelectronics Sa Prise de contact substrat pour un transistor mos dans un substrat soi, en particulier fdsoi
US10096708B2 (en) 2016-03-30 2018-10-09 Stmicroelectronics Sa Enhanced substrate contact for MOS transistor in an SOI substrate, in particular an FDSOI substrate
FR3053834B1 (fr) * 2016-07-05 2020-06-12 Stmicroelectronics Sa Structure de transistor
US10424664B2 (en) * 2016-12-14 2019-09-24 Globalfoundries Inc. Poly gate extension source to body contact
US11948978B2 (en) * 2020-04-24 2024-04-02 Qualcomm Incorporated Field-effect transistors (FETs) employing edge transistor current leakage suppression to reduce FET current leakage
CN112349784B (zh) * 2020-11-05 2022-07-29 武汉新芯集成电路制造有限公司 半导体器件及其制造方法
CN113327983B (zh) * 2021-05-26 2023-05-05 武汉新芯集成电路制造有限公司 半导体器件及其制造方法

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US5185280A (en) * 1991-01-29 1993-02-09 Texas Instruments Incorporated Method of fabricating a soi transistor with pocket implant and body-to-source (bts) contact
US5298773A (en) * 1992-08-17 1994-03-29 United Technologies Corporation Silicon-on-insulator H-transistor layout for gate arrays
US5317181A (en) * 1992-09-10 1994-05-31 United Technologies Corporation Alternative body contact for fully-depleted silicon-on-insulator transistors
US5635745A (en) * 1994-09-08 1997-06-03 National Semiconductor Corporation Analog multiplexer cell for mixed digital and analog signal inputs
US5811855A (en) * 1997-12-29 1998-09-22 United Technologies Corporation SOI combination body tie
US5821769A (en) * 1995-04-21 1998-10-13 Nippon Telegraph And Telephone Corporation Low voltage CMOS logic circuit with threshold voltage control
CN1260597A (zh) * 1999-01-08 2000-07-19 国际商业机器公司 绝缘体基硅厚氧结构和制造方法
US6154091A (en) * 1999-06-02 2000-11-28 International Business Machines Corporation SOI sense amplifier with body contact structure
US6177708B1 (en) * 1998-08-07 2001-01-23 International Business Machines Corporation SOI FET body contact structure
US6310377B1 (en) * 1996-06-07 2001-10-30 Shigenobu Maeda Semiconductor device having an SOI structure
US6387739B1 (en) * 1998-08-07 2002-05-14 International Business Machines Corporation Method and improved SOI body contact structure for transistors
US6433587B1 (en) * 2000-03-17 2002-08-13 International Business Machines Corporation SOI CMOS dynamic circuits having threshold voltage control
US6440788B2 (en) * 2000-01-18 2002-08-27 International Business Machines Corporation Implant sequence for multi-function semiconductor structure and method
US6867106B2 (en) * 2000-10-25 2005-03-15 Fujitsu Limited Semiconductor device and method for fabricating the same

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Publication number Priority date Publication date Assignee Title
USH1435H (en) * 1991-10-21 1995-05-02 Cherne Richard D SOI CMOS device having body extension for providing sidewall channel stop and bodytie
US5821575A (en) * 1996-05-20 1998-10-13 Digital Equipment Corporation Compact self-aligned body contact silicon-on-insulator transistor
US6399989B1 (en) * 1999-08-03 2002-06-04 Bae Systems Information And Electronic Systems Integration Inc. Radiation hardened silicon-on-insulator (SOI) transistor having a body contact
US6307237B1 (en) * 1999-12-28 2001-10-23 Honeywell International Inc. L-and U-gate devices for SOI/SOS applications
JP5001494B2 (ja) * 2001-08-28 2012-08-15 セイコーインスツル株式会社 絶縁性基板上に形成された電界効果トランジスタ
US6905919B2 (en) * 2003-07-29 2005-06-14 Chartered Semiconductor Manufacturing Ltd. Method of forming a partially depleted silicon on insulator (PDSOI) transistor with a pad lock body extension

Patent Citations (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5185280A (en) * 1991-01-29 1993-02-09 Texas Instruments Incorporated Method of fabricating a soi transistor with pocket implant and body-to-source (bts) contact
US5298773A (en) * 1992-08-17 1994-03-29 United Technologies Corporation Silicon-on-insulator H-transistor layout for gate arrays
US5317181A (en) * 1992-09-10 1994-05-31 United Technologies Corporation Alternative body contact for fully-depleted silicon-on-insulator transistors
US5635745A (en) * 1994-09-08 1997-06-03 National Semiconductor Corporation Analog multiplexer cell for mixed digital and analog signal inputs
US5821769A (en) * 1995-04-21 1998-10-13 Nippon Telegraph And Telephone Corporation Low voltage CMOS logic circuit with threshold voltage control
US6310377B1 (en) * 1996-06-07 2001-10-30 Shigenobu Maeda Semiconductor device having an SOI structure
US5811855A (en) * 1997-12-29 1998-09-22 United Technologies Corporation SOI combination body tie
US6177708B1 (en) * 1998-08-07 2001-01-23 International Business Machines Corporation SOI FET body contact structure
US6387739B1 (en) * 1998-08-07 2002-05-14 International Business Machines Corporation Method and improved SOI body contact structure for transistors
CN1260597A (zh) * 1999-01-08 2000-07-19 国际商业机器公司 绝缘体基硅厚氧结构和制造方法
US6154091A (en) * 1999-06-02 2000-11-28 International Business Machines Corporation SOI sense amplifier with body contact structure
US6440788B2 (en) * 2000-01-18 2002-08-27 International Business Machines Corporation Implant sequence for multi-function semiconductor structure and method
US6433587B1 (en) * 2000-03-17 2002-08-13 International Business Machines Corporation SOI CMOS dynamic circuits having threshold voltage control
US6867106B2 (en) * 2000-10-25 2005-03-15 Fujitsu Limited Semiconductor device and method for fabricating the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011097883A1 (zh) * 2010-02-09 2011-08-18 中国科学院微电子研究所 一种体接触器件结构及其制造方法

Also Published As

Publication number Publication date
EP1872402A4 (en) 2008-06-11
WO2006113395A3 (en) 2007-03-08
CN101142679A (zh) 2008-03-12
ATE454714T1 (de) 2010-01-15
EP1872402A2 (en) 2008-01-02
WO2006113395A2 (en) 2006-10-26
US7084462B1 (en) 2006-08-01
TW200731531A (en) 2007-08-16
EP1872402B1 (en) 2010-01-06
JP4395192B2 (ja) 2010-01-06
DE602006011595D1 (de) 2010-02-25
JP2008537339A (ja) 2008-09-11
TWI372461B (en) 2012-09-11

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Effective date of registration: 20171107

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Patentee after: GLOBALFOUNDRIES INC.

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Patentee before: Core USA second LLC

Effective date of registration: 20171107

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Granted publication date: 20090603

Termination date: 20190413