CN100495128C - A Gamma Reference Voltage Generating Circuit - Google Patents
A Gamma Reference Voltage Generating Circuit Download PDFInfo
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- CN100495128C CN100495128C CNB2006100786575A CN200610078657A CN100495128C CN 100495128 C CN100495128 C CN 100495128C CN B2006100786575 A CNB2006100786575 A CN B2006100786575A CN 200610078657 A CN200610078657 A CN 200610078657A CN 100495128 C CN100495128 C CN 100495128C
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Abstract
Description
技术领域 technical field
本发明涉及一种薄膜晶体管液晶显示器(TFT-LCD),尤其涉及薄膜晶体管液晶显示器的伽玛(GAMMA)参考电压产生电路。The invention relates to a thin film transistor liquid crystal display (TFT-LCD), in particular to a gamma (GAMMA) reference voltage generating circuit of the thin film transistor liquid crystal display.
背景技术 Background technique
液晶显示技术发展得非常快,由于其重量轻,液晶显示器件被广泛应用于各种显示领域。Liquid crystal display technology is developing very fast, and due to its light weight, liquid crystal display devices are widely used in various display fields.
伽玛参考电压产生电路作为薄膜晶体管液晶显示器模块的一个重要组成部分,对薄膜晶体管液晶显示器的灰度调节起着至关重要的作用。伽玛参考电压产生电路的作用是根据所要求的伽玛曲线,来设定伽玛参考电压GMA1、GMA2等等,作为薄膜晶体管液晶显示器进行灰度显示的参考电压。例如,正压区的伽玛参考电压是GMA1到GMA5,负压区的伽玛参考电压是GMA6到GMA10,每隔16个灰度设定一个伽玛参考电压。将各伽玛参考电压输入到薄膜晶体管液晶显示器的信号驱动电路中,经过信号驱动电路的数模转换器,产生所有灰度电压。从而使得薄膜晶体管液晶显示器模块的灰度和透过率曲线拟合出要求的伽玛曲线。As an important part of the TFT-LCD module, the gamma reference voltage generation circuit plays a vital role in the gray scale adjustment of the TFT-LCD. The function of the gamma reference voltage generation circuit is to set the gamma reference voltages GMA1, GMA2, etc. according to the required gamma curve, as the reference voltage for the grayscale display of the thin film transistor liquid crystal display. For example, the gamma reference voltages in the positive pressure area are GMA1 to GMA5, the gamma reference voltages in the negative pressure area are GMA6 to GMA10, and a gamma reference voltage is set every 16 gray scales. Each gamma reference voltage is input into the signal driving circuit of the thin film transistor liquid crystal display, and all gray scale voltages are generated through the digital-to-analog converter of the signal driving circuit. Therefore, the grayscale and transmittance curves of the thin film transistor liquid crystal display module fit the required gamma curve.
根据液晶材料的电压-透过率曲线,通过计算得到各个伽玛参考电压值,然后使用伽玛参考电压产生电路来产生这些伽玛参考电压,提供给信号驱动电路。现有的伽玛参考电压产生电路如图1所示。According to the voltage-transmittance curve of the liquid crystal material, various gamma reference voltage values are obtained through calculation, and then the gamma reference voltage generating circuit is used to generate these gamma reference voltages, which are provided to the signal driving circuit. The existing gamma reference voltage generating circuit is shown in FIG. 1 .
由电源提供的直流稳定电压VDD,图1右侧的次分压回路通过一个伽玛电阻串R0、R1…R5-1、R5-2…R9、R10产生各个伽玛参考电压,而图1左侧的主分压回路和反馈运算放大电路是稳压电路,稳定次分压电路的GMA3、GMA5.5和GMA8的电压值。The DC stable voltage VDD provided by the power supply, the secondary voltage divider circuit on the right side of Figure 1 generates each gamma reference voltage through a gamma resistor series R0, R1...R5-1, R5-2...R9, R10, while the left side of Figure 1 The main voltage divider loop and the feedback operational amplifier circuit on the side are voltage stabilizing circuits, which stabilize the voltage values of GMA3, GMA5.5 and GMA8 of the secondary voltage divider circuit.
现有技术的主要缺点在于:伽玛电阻值的确定非常繁琐,不同的薄膜晶体管液晶显示器面板和不同的液晶材料特性需要用不同的伽玛电阻值进行调节,所以需要通过大量的计算和调试工作,大大影响了工程技术人员的工作效率。而且每个伽玛参考电压值要分别输入到对应信号驱动电路的引脚上,而往往为了提高灰度显示特性,会增加伽玛参考电压的个数,现有技术需要增加相应数目的信号驱动电路输入引脚,因此不利于信号驱动电路的集成,使显示分辨率受到限制。The main disadvantage of the prior art is that the determination of the gamma resistance value is very cumbersome, and different TFT liquid crystal display panels and different liquid crystal material characteristics need to be adjusted with different gamma resistance values, so a large amount of calculation and debugging work is required , which greatly affects the work efficiency of engineers and technicians. Moreover, each gamma reference voltage value should be input to the pins of the corresponding signal drive circuit, and often in order to improve the grayscale display characteristics, the number of gamma reference voltages will be increased, and the prior art needs to increase the corresponding number of signal drive circuits. Therefore, it is not conducive to the integration of the signal driving circuit, and the display resolution is limited.
发明内容 Contents of the invention
本发明的目的是针对现有技术的缺陷,以及边缘场开关型(FFS)等这类薄膜晶体管液晶显示器所使用的液晶材料具有如图2所示的对称性电压-透过率曲线的特点,提供一种新的伽玛参考电压产生电路,大幅减少伽玛电阻调试的工作量,减少信号驱动电路的伽玛参考电压输入引脚数目。The purpose of the present invention is to address the defects of the prior art, and the liquid crystal material used in this type of thin film transistor liquid crystal display such as fringe field switching type (FFS) has the characteristics of the symmetrical voltage-transmittance curve as shown in Figure 2, A new gamma reference voltage generation circuit is provided, which greatly reduces the workload of gamma resistance debugging and reduces the number of gamma reference voltage input pins of the signal drive circuit.
为了实现上述目的,本发明提供一种伽玛参考电压产生电路,包括:直流稳定电压,正压区伽玛参考电压产生电路,其特征在于:所述正压区伽玛参考电压产生电路输出端连接有由开关和反向电荷泵电路构成的负压区伽玛参考电压产生电路,所述开关是由高频方波信号控制的两态开关,当方波位于第一电平状态时,开关接通正压区伽玛参考电压;当方波位于第二电平状态时,开关接地;所述反向电荷泵电路由两个电容和两个二极管构成;其中第一个电容的一端与所述两态开关连接,另一端与第一个二极管的PN结的P极连接,同时与第二个二极管的PN结的N极连接;第一个二极管的N极连接至基准电压;第二个二极管的P极与第二个电容一端连接;第二个电容的另一端连接至基准电压。所述高频方波信号的频率大于或等于50kHz。所述高频方波信号由驱动电路的时钟控制器件产生。In order to achieve the above object, the present invention provides a gamma reference voltage generation circuit, including: a DC stable voltage, a gamma reference voltage generation circuit in the positive pressure region, characterized in that: the output terminal of the gamma reference voltage generation circuit in the positive pressure region A gamma reference voltage generating circuit in the negative pressure region composed of a switch and an inverse charge pump circuit is connected. The switch is a two-state switch controlled by a high-frequency square wave signal. When the square wave is in the first level state, the switch is connected to Gamma reference voltage in the positive pressure region; when the square wave is in the second level state, the switch is grounded; the reverse charge pump circuit is composed of two capacitors and two diodes; wherein one end of the first capacitor is connected to the two The other end is connected to the P pole of the PN junction of the first diode, and at the same time connected to the N pole of the PN junction of the second diode; the N pole of the first diode is connected to the reference voltage; The P pole is connected to one end of the second capacitor; the other end of the second capacitor is connected to the reference voltage. The frequency of the high frequency square wave signal is greater than or equal to 50kHz. The high frequency square wave signal is generated by a clock control device of the drive circuit.
本发明的伽玛参考电压产生电路只需要调节用于产生对称电压-透过率曲线正压区伽玛参考电压的伽玛电阻值,而通过上述开关和反向电荷泵电路构成的电路自动地产生负压区相应的伽玛参考电压,将伽玛电阻调试的工作量降为现有技术工作量的一半。The gamma reference voltage generation circuit of the present invention only needs to adjust the gamma resistance value used to generate the gamma reference voltage in the positive pressure region of the symmetrical voltage-transmittance curve, and the circuit formed by the above-mentioned switch and the reverse charge pump circuit automatically The gamma reference voltage corresponding to the negative pressure area is generated, and the workload of gamma resistor debugging is reduced to half of the workload of the prior art.
此外,本发明所述的由正压区伽玛参考电压产生负压区伽玛参考电压的电路可以内置在信号驱动电路中,这样信号驱动电路的输入端就只需要提供正压区伽玛参考电压引脚即可,所以信号驱动电路的伽玛参考电压输入引脚数目也相应的减少了。In addition, the circuit for generating the gamma reference voltage in the negative pressure region from the gamma reference voltage in the positive pressure region according to the present invention can be built in the signal driving circuit, so that the input terminal of the signal driving circuit only needs to provide the gamma reference voltage in the positive pressure region Only voltage pins are required, so the number of gamma reference voltage input pins of the signal driving circuit is correspondingly reduced.
本发明中的伽玛参考电压产生电路是由开关和反向电荷泵电路构成的,较现有的同类电路大为简化,这降低了电路的面积和功耗。另外由于采用的电路简单,并且不依赖于电路元件参数,电路精度得以提高。The gamma reference voltage generating circuit in the present invention is composed of a switch and an inverse charge pump circuit, which is greatly simplified compared with existing similar circuits, which reduces the area and power consumption of the circuit. In addition, because the adopted circuit is simple and does not depend on the parameters of the circuit components, the circuit precision can be improved.
本发明的各种优点在具体实施例中将更加清楚地体现。Various advantages of the present invention will be more clearly reflected in specific embodiments.
附图说明 Description of drawings
图1是先前的一种伽玛参考电压产生电路;Fig. 1 is a previous gamma reference voltage generating circuit;
图2是一种液晶材料的对称性电压-透过率特性曲线;Figure 2 is a symmetrical voltage-transmittance characteristic curve of a liquid crystal material;
图3是本发明的伽玛参考电压产生电路的示意图;Fig. 3 is the schematic diagram of the gamma reference voltage generation circuit of the present invention;
图4是本发明的伽玛参考电压产生电路中,利用正压区伽玛参考电压产生出负压区伽玛参考电压的电路部分的结构图;Fig. 4 is a structural diagram of the circuit part for generating the gamma reference voltage in the negative pressure region by using the gamma reference voltage in the positive pressure region in the gamma reference voltage generating circuit of the present invention;
图5是本发明实施例中的电路工作时的信号示意图。Fig. 5 is a schematic diagram of signals when the circuit in the embodiment of the present invention is working.
具体实施方式 Detailed ways
下面结合附图和具体实施例,对本发明进行进一步详细说明。The present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments.
一种用于薄膜晶体管液晶显示器的液晶材料具有如图2所示的对称性电压-透过率特性曲线。依据所述特性曲线和所要求的灰度确定各伽玛参考电压值。如果确定正压区的伽玛参考电压值依次为GMA1、GMA2、GMA3、GMA4、GMA5,那么由于对称性的电压-透过率特性曲线,负压区伽玛参考电压值GMA6、GMA7、GMA8、GMA9、GMA10与正压区伽玛参考电压值GMA1、GMA2、GMA3、GMA4、GMA5,相对于电压-透过率特性曲线的对称中心电压VCNETER,互为镜像。即:A liquid crystal material used in a thin film transistor liquid crystal display has a symmetrical voltage-transmittance characteristic curve as shown in FIG. 2 . Each gamma reference voltage value is determined according to the characteristic curve and the required gray scale. If it is determined that the gamma reference voltage values in the positive pressure area are GMA1, GMA2, GMA3, GMA4, and GMA5, then due to the symmetrical voltage-transmittance characteristic curve, the gamma reference voltage values in the negative pressure area GMA6, GMA7, GMA8, GMA9 , GMA10 and the gamma reference voltage values GMA1 , GMA2 , GMA3 , GMA4 , GMA5 in the positive pressure zone are mirror images of each other with respect to the symmetrical center voltage VCNETER of the voltage-transmittance characteristic curve. Right now:
GMA1+GMA10=2VCNETERGMA1+GMA10=2VCNETER
GMA2+GMA9=2VCNETERGMA2+GMA9=2VCNETER
GMA3+GMA8=2VCNETERGMA3+GMA8=2VCNETER
GMA4+GMA7=2VCNETERGMA4+GMA7=2VCNETER
GMA5+GMA6=2VCNETERGMA5+GMA6=2VCNETER
所以,利用图3的左边部分电路确定了正压区的伽玛参考电压值依次为GMA1、GMA2、GMA3、GMA4、GMA5之后,即可通过图3右边的负压区伽玛参考电压由电路101产生相应的负压区伽玛参考电压GMA6、GMA7、GMA8、GMA9、GMA10。Therefore, after the gamma reference voltage values in the positive pressure area are determined to be GMA1, GMA2, GMA3, GMA4, and GMA5 in sequence by using the left part of the circuit in FIG. 3, the gamma reference voltage in the negative pressure area on the right side of FIG. Generate corresponding gamma reference voltages GMA6, GMA7, GMA8, GMA9, GMA10 in the negative pressure zone.
图3的左边部分电路,是以直流稳定电压VDD通过由电阻串R0、R1、R2、R3、R4、R5组成的次分压回路产生相应的正压区伽玛参考电压GMA1至GMA5,同时通过主分压回路和反馈运算放大电路的稳压作用,稳定次分压电路的正压区伽玛参考电压GMA2和GMA4。下面对图3右边部分电路,即负压区伽玛参考电压产生电路101进行详细描述。The left part of the circuit in Figure 3 uses the DC stable voltage VDD to generate the corresponding gamma reference voltages GMA1 to GMA5 in the positive pressure region through the sub-voltage divider circuit composed of resistor strings R0, R1, R2, R3, R4, and R5. The voltage stabilization function of the main voltage divider circuit and the feedback operational amplifier circuit stabilizes the gamma reference voltages GMA2 and GMA4 in the positive pressure region of the secondary voltage divider circuit. The circuit on the right part of FIG. 3 , that is, the gamma reference
如图4所示,负压区伽玛参考电压产生电路由两态开关T1和T1,以及反向电荷泵电路构成。As shown in Fig. 4, the gamma reference voltage generation circuit in the negative pressure region is composed of two-state switches T1 and T1, and an inverting charge pump circuit.
其中,两态开关T1和T1由高频方波信号控制,高频方波信号的频率大于或等于50kHz,且可以方便的由驱动电路的时钟控制器等控制器件产生。当高频方波信号位于如图5中所示的高电平状态时,开关T1导通,开关T1截止,开关电路接通正压区伽玛参考电压;当高频方波信号位于如图5中所示的低电平状态时,开关T1导通,开关T1截止,开关电路接地。反向电荷泵电路由两个电容和两个二极管构成;其中电容C1的一端与两态开关T1和T1连接,另一端与二极管D1的P极连接,同时与二极管D2的N极连接;二极管的D1的N极连接至基准电压;二极管D2的P极与电容C2的一端连接;电容C2的另一端连接至基准电压。正压区伽玛参考电压从两态开关中的T1输入,相应的负压区伽玛参考电压从反相电荷泵的D2的P极一端输出。其中,反向电荷泵电路的时间常数远大于高频方波信号的周期。Wherein, the two-state switches T1 and T1 are controlled by a high frequency square wave signal, the frequency of the high frequency square wave signal is greater than or equal to 50 kHz, and can be conveniently generated by a control device such as a clock controller of the driving circuit. When the high-frequency square wave signal is in the high level state as shown in Figure 5, the switch T1 is turned on, the switch T1 is cut off, and the switch circuit is connected to the Gamma reference voltage in the positive pressure region; when the high-frequency square wave signal is in the In the low state shown in 5, the switch T1 is turned on, the switch T1 is turned off, and the switch circuit is grounded. The reverse charge pump circuit consists of two capacitors and two diodes; one end of the capacitor C1 is connected to the two-state switches T1 and T1, the other end is connected to the P pole of the diode D1, and is connected to the N pole of the diode D2; The N pole of D1 is connected to the reference voltage; the P pole of the diode D2 is connected to one end of the capacitor C2; the other end of the capacitor C2 is connected to the reference voltage. The Gamma reference voltage in the positive pressure zone is input from T1 in the two-state switch, and the corresponding Gamma reference voltage in the negative pressure zone is output from the P pole end of D2 of the inverting charge pump. Among them, the time constant of the reverse charge pump circuit is much larger than the period of the high-frequency square wave signal.
下面结合反向电荷泵电路的工作原理,对本具体实施例中利用负压区伽玛参考电压产生电路101通过正压区伽玛参考电压得到负压区伽玛参考电压的详细工作原理进行进一步描述。The detailed working principle of using the gamma reference
反向电荷泵基本原理是二极管的偏置状态保持反偏,以实现电容上电荷的保持。由于高频方波信号控制两态开关T1和T1的状态,图4中a点的电位Va以与高频方波信号相同的频率变化,如图5所示。当电路处于T1闭合且T1断开的上半周期,a点的电位Va=GMA1,考虑到二极管D1需要保持反偏,C1才能保持电荷,因此b点的电位不超过Vb=V1-VD,其中V1为基准电压,VD为二极管的阈值电压。由于C1充电利用的是二极管D1的反向漏电流,因此充电速度缓慢,但是经历多个T1闭合且T1断开的上半周期,最后b点的电位总可以充至V1-VD。完成上述充电过程后,C1两端的电压差在上半周期可达到V1-VD-GMA1。这时当电路进入T1闭合且T1断开的下半周期,a点的电位Va=0,由于反向电荷泵电路的时间常数远大于高频方波信号的周期,C1两端的电压差仍为V1-VD-GMA1,那么b点的电位被拉低至Vb=V1-VD-GMA1<V1-VD,这样电容C1将继续充电,同样由于利用的是二极管D1的反向漏电流进行充电,充电速度缓慢,在该下半个周期内,C1两端电压差仅增加小量ΔV,电容C1两端的电压差变为V1-VD-GMA1+ΔV。在接下来的T1闭合且T1断开的上半个周期,a点的电位Va=GMA1,b点的电位Vb=V1-VD+ΔV>V1-VD,因此电容C1会放电,使b点的电位回到Vb=V1-VD。如果忽略上述电压差的小量波动ΔV,电容C1两端的电压差基本稳定为V1-VD-GMA1,不随时间变化,所以b点的电位跟随a点的电位,以与高频方波信号相同的频率,在Vb=V1-VD和V1-VD-GMA1两个电平上变化。The basic principle of the reverse charge pump is that the bias state of the diode remains reverse biased to maintain the charge on the capacitor. Since the high-frequency square wave signal controls the state of the two-state switches T1 and T1, the potential Va at point a in Figure 4 changes at the same frequency as the high-frequency square wave signal, as shown in Figure 5. When the circuit is in the first half cycle when T1 is closed and T1 is off, the potential at point a is Va=GMA1. Considering that the diode D1 needs to be reverse-biased, C1 can hold the charge, so the potential at point b does not exceed Vb=V1-VD, where V1 is the reference voltage, and VD is the threshold voltage of the diode. Since the charging of C1 utilizes the reverse leakage current of the diode D1, the charging speed is slow, but after going through multiple first half cycles when T1 is closed and T1 is open, the potential at point b can always be charged to V1-VD at the end. After the above charging process is completed, the voltage difference across C1 can reach V1-VD-GMA1 in the first half cycle. At this time, when the circuit enters the second half period when T1 is closed and T1 is disconnected, the potential Va at point a=0, since the time constant of the reverse charge pump circuit is much larger than the period of the high-frequency square wave signal, the voltage difference across C1 is still V1-VD-GMA1, then the potential at point b is pulled down to Vb=V1-VD-GMA1<V1-VD, so the capacitor C1 will continue to charge, and also because the reverse leakage current of the diode D1 is used for charging, charging The speed is slow. In the second half cycle, the voltage difference across C1 only increases by a small amount of ΔV, and the voltage difference across capacitor C1 becomes V1-VD-GMA1+ΔV. In the next first half cycle when T1 is closed and T1 is off, the potential at point a is Va=GMA1, and the potential at point b is Vb=V1-VD+ΔV>V1-VD, so capacitor C1 will discharge, making the potential at point b The potential returns to Vb=V1-VD. If the small fluctuation ΔV of the above-mentioned voltage difference is ignored, the voltage difference between the two ends of the capacitor C1 is basically stable as V1-VD-GMA1, which does not change with time, so the potential of point b follows the potential of point a, with the same high-frequency square wave signal The frequency changes on two levels of Vb=V1-VD and V1-VD-GMA1.
当b点电位为Vb=V1-VD-GMA1时,同样考虑到二极管D2需要反偏,电容C2才能保持电荷,因此c点的电位稳定时被拉至GMA10=V1-2VD-GMA1,随后当b点电位变为Vb=V1-VD,二极管仍然反偏,因此电容C2上的电荷状态未有变化,那么c点的电位仍稳定为GMA10=V1-2VD-GMA1。这样c点的电位GMA10为不随时间变化的单电平。When the potential at point b is Vb=V1-VD-GMA1, also considering that diode D2 needs to be reverse-biased, capacitor C2 can hold the charge, so when the potential at point c is stable, it is pulled to GMA10=V1-2VD-GMA1, and then when b The potential of the point becomes Vb=V1-VD, and the diode is still reverse-biased, so the state of charge on the capacitor C2 remains unchanged, and the potential of point c is still stable at GMA10=V1-2VD-GMA1. In this way, the potential GMA10 at point c is a single level that does not change with time.
如果设定基准电压V1=2VCENTER+2VD,那么GMA10=2VCNETER-GMA1。这样就实现了由正压区伽玛参考电压GMA1产生负压区伽玛参考电压GMA10的功能。同样的方法可以由其他正压区伽玛参考电压产生相应的负压区伽玛参考电压,即由GMA2产生GMA9、GMA3产生GMA8、GMA4产生GMA7及GMA5产生GMA6。If the reference voltage V1=2VCENTER+2VD is set, then GMA10=2VCNETER-GMA1. In this way, the function of generating the gamma reference voltage GMA10 in the negative pressure region from the gamma reference voltage GMA1 in the positive pressure region is realized. The same method can be used to generate corresponding gamma reference voltages in the negative region from other positive region gamma reference voltages, that is, GMA9 is generated from GMA2, GMA8 is generated from GMA3, GMA7 is generated from GMA4, and GMA6 is generated from GMA5.
如图3所示,本实施例中通过调试用于产生对称电压-透过率曲线正压区伽玛参考电压的伽玛电阻值R0至R5,得到正区GMA1、GMA2、GMA3、GMA4、GMA5后通过上述开关和反向电荷泵电路构成的电路101自动地产生负压区相应的伽玛参考电压GMA10、GMA9、GMA8、GMA7、GMA6,与现有技术相比,需要调试的伽玛电阻的数量减少一半。As shown in Figure 3, in this embodiment, the positive regions GMA1, GMA2, GMA3, GMA4, and GMA5 are obtained by adjusting the gamma resistance values R0 to R5 used to generate the gamma reference voltage in the positive pressure region of the symmetrical voltage-transmittance curve Afterwards, the
同样,本发明描述的电路可以内置在信号驱动电路中,这样信号驱动电路的输入端就只需要提供正压区伽玛参考电压引脚即可,与现有技术相比,引脚数目减少一半。本实施例中为5个,所以信号驱动电路的输入端引脚数目也相应的减少了5个。Similarly, the circuit described in the present invention can be built into the signal driving circuit, so that the input terminal of the signal driving circuit only needs to provide the gamma reference voltage pin in the positive pressure region, and compared with the prior art, the number of pins is reduced by half . In this embodiment, there are 5 pins, so the number of input pins of the signal driving circuit is correspondingly reduced by 5.
另外,本发明的伽玛参考电压产生电路是由开关和反向电荷泵电路构成的电路较现有的同类电路大为简化,这降低了电路的面积和功耗。另外由于采用的电路简单,并且不依赖于电路元件参数,电路精度得以提高,产生的伽玛参考电压精度也随之提高。In addition, the gamma reference voltage generating circuit of the present invention is composed of a switch and an inverse charge pump circuit, which is greatly simplified compared with the existing similar circuits, which reduces the area and power consumption of the circuit. In addition, because the adopted circuit is simple and does not depend on the parameters of the circuit components, the precision of the circuit is improved, and the precision of the generated gamma reference voltage is also improved accordingly.
本实施例仅用于说明而不是限定本发明所述的薄膜晶体管液晶显示器驱动电路的伽玛参考电压产生电路。除非特别指出的部分,本发明不局限于上述描述的具体细节。如根据灰度等级变换伽玛参考电压的数量等。在不偏离电路实质性特征的前提下,本发明还有其它的具体实施例。任何符合本发明特征的修改和变化,都在本发明的范围之内。This embodiment is only used to illustrate rather than limit the gamma reference voltage generating circuit of the thin film transistor liquid crystal display driving circuit of the present invention. Unless otherwise indicated, the invention is not limited to the specific details described above. For example, the number of gamma reference voltages can be changed according to the gray level. On the premise of not departing from the essential characteristics of the circuit, the present invention also has other specific embodiments. Any modifications and changes that conform to the characteristics of the present invention are within the scope of the present invention.
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CN101290756B (en) * | 2008-06-25 | 2010-09-29 | 昆山龙腾光电有限公司 | Gamma voltage generating device, liquid crystal display device and method for controlling gamma voltage |
CN101882417B (en) * | 2010-07-06 | 2013-03-06 | 华映光电股份有限公司 | Display device and gamma voltage generator |
CN103366667B (en) | 2013-07-01 | 2016-03-30 | 北京京东方光电科技有限公司 | Gamma voltage generation circuit and control method |
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US10168724B2 (en) | 2015-06-15 | 2019-01-01 | Micron Technology, Inc. | Apparatuses and methods for providing reference voltages |
US10162377B2 (en) | 2015-06-15 | 2018-12-25 | Micron Technology, Inc. | Apparatuses and methods for providing reference voltages |
CN107492358B (en) * | 2017-09-14 | 2020-02-21 | 京东方科技集团股份有限公司 | Gamma reference voltage generation circuit and generation method thereof |
CN110085187B (en) * | 2019-05-05 | 2022-04-01 | Tcl华星光电技术有限公司 | Method and device for selecting resistance value of Gamma circuit |
CN110379396B (en) * | 2019-06-17 | 2022-03-25 | 北京集创北方科技股份有限公司 | Gamma voltage generation method, generation circuit, source electrode driving circuit, driving chip and display device |
CN112669786A (en) * | 2021-01-11 | 2021-04-16 | 北京京东方技术开发有限公司 | Gamma circuit, driving method thereof and display panel |
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