CN100490163C - Manufacturing method of image sensor element - Google Patents
Manufacturing method of image sensor element Download PDFInfo
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- CN100490163C CN100490163C CN 200310116439 CN200310116439A CN100490163C CN 100490163 C CN100490163 C CN 100490163C CN 200310116439 CN200310116439 CN 200310116439 CN 200310116439 A CN200310116439 A CN 200310116439A CN 100490163 C CN100490163 C CN 100490163C
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- 238000004519 manufacturing process Methods 0.000 title claims description 23
- 239000010410 layer Substances 0.000 claims abstract description 128
- 239000011241 protective layer Substances 0.000 claims abstract description 92
- 238000000034 method Methods 0.000 claims abstract description 51
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 239000012528 membrane Substances 0.000 claims description 59
- 239000000463 material Substances 0.000 claims description 23
- 230000015572 biosynthetic process Effects 0.000 claims description 12
- 238000001312 dry etching Methods 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 238000003466 welding Methods 0.000 abstract 4
- 229920002120 photoresistant polymer Polymers 0.000 description 17
- 239000004065 semiconductor Substances 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 239000003795 chemical substances by application Substances 0.000 description 6
- 238000005260 corrosion Methods 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 230000003628 erosive effect Effects 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 239000012780 transparent material Substances 0.000 description 4
- 239000003086 colorant Substances 0.000 description 3
- 230000000295 complement effect Effects 0.000 description 3
- 238000003384 imaging method Methods 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- WNJSKZBEWNVKGU-UHFFFAOYSA-N 2,2-dimethoxyethylbenzene Chemical compound COC(OC)CC1=CC=CC=C1 WNJSKZBEWNVKGU-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000001055 blue pigment Substances 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 229920002521 macromolecule Polymers 0.000 description 2
- 239000001054 red pigment Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- YEIGUXGHHKAURB-UHFFFAOYSA-N viridine Natural products O=C1C2=C3CCC(=O)C3=CC=C2C2(C)C(O)C(OC)C(=O)C3=COC1=C23 YEIGUXGHHKAURB-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002362 mulch Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/0212—Auxiliary members for bonding areas, e.g. spacers
- H01L2224/02122—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body
- H01L2224/02163—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body on the bonding area
- H01L2224/02165—Reinforcing structures
- H01L2224/02166—Collar structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0555—Shape
- H01L2224/05556—Shape in side view
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
This invention discloses a method for making image sensor suitable for substrate having at least one welding pad, plurality of photo sensitive diode sensitive areas are formed in substrate, at least one dielectric layer is formed on substrate, welding pad is set in dielectric layer, the first protective layer having a opening is set on dielectric layer and exposes part surface of welding pad, the second protective layer is formed on the opening og the first protective layer, a color light filter film is formed second protective layer, a flat layer is formed on second protective layer and color light filter film layer with formed plurality of microlens. Said invention can keep the completion of welding pad surface and make fine lead bonding.
Description
Technical field
The present invention relates to a kind of manufacture method of image sensor element, and particularly relevant for a kind of manufacture method of avoiding producing on the welded gasket surface image sensor element of hole (pit).
Background technology
(Charge Coupled Device CCD) has high dynamic range, low dark current to charge coupled cell, and its technical development maturation, therefore is the solid state image sensor of normal use now.On the other hand, complement metal oxide semiconductor image sensor (CMOS Image Sensor, CIS) with the process compatible of CMOS transistor, can be incorporated on the same chip with other peripheral circuit on the same chip easily, therefore can significantly reduce the cost and the consumed power of imageing sensor.Also so in recent years in the application in low price field, complement metal oxide semiconductor image sensor has become the substitute of charge coupled cell, and then makes the importance of CMOS transistor grow with each passing day.
In solid state image sensor elements such as above-mentioned charge coupled cell and complement metal oxide semiconductor image sensor, welded gasket must be set to electrically connect with external circuit, setting by welded gasket, can provide voltage to the transistor in the image sensor element through welded gasket by external circuit, to carry out the operation of image sensor element, and, the electronic signal of the gained after of the photodiode in the image sensor element via opto-electronic conversion, also must export external circuit to, to convert electronic signal to image by proper device via welded gasket.
Figure 1A to Fig. 1 D illustrate is the manufacture method of conventional images sensor element, and for asking for simplicity clipped member and corresponding explanation thereof in following technology.
At first, please refer to Figure 1A, a semiconductor silicon substrate 100 is provided, wherein in this semiconductor silicon substrate 100, be formed with a plurality of photo sensitive diode sensitive areas 102.And, the dielectric layer 104 with welded gasket 106 is set on this substrate 100.Then, setting has the protective layer 108 of opening 110 on dielectric layer 104 and welded gasket 106 surfaces, and exposes the surface of welded gasket 106 in opening 110.
Then; please refer to Figure 1B; on the protective layer outside the opening 110 108, form colored light filter membrane layer 112; wherein these a little colored light filter membrane layer 112 are covered on the different photo sensitive diode sensitive areas 102, and these a little colored light filter membrane layer 112 have three kinds of different colors (red, blue, green).
Then, please refer to Fig. 1 C, on colored light filter membrane layer 112 and protective layer 108, form the flatness layer 114 of composition, so that the flattening surface of colored light filter membrane layer 112, and in this flatness layer 114, expose opening 110.
Then, please refer to Fig. 1 D, photo anti-corrosion agent material is coated on the flatness layer 114, then carry out the step of exposure imaging, and above photo sensitive diode sensitive areas 102 and corresponding colored light filter membrane layer 112, form discontinuous photoresist pattern, and then carry out thermal process, the photoresist pattern is formed circular-arc to form lenticule 116.According to the technology of above-mentioned Figure 1A to Fig. 1 D, can finish the manufacturing of image sensor element.
In the technology of above-mentioned image sensor element; because colored light filter membrane layer 112 belongs to photo anti-corrosion agent material with the material of lenticule 116; therefore before forming colored light filter membrane layer 112 and lenticule 116, just must define protective layer 108 and form openings 110 to expose the part surface at least of welded gasket 106.Yet, in the technology that forms colored light filter membrane layer 112 and lenticule 116, chemical liquids such as its employed photoresist and developer solution will cause erosion to welded gasket 106 surfaces, and then at welded gasket 106 surface formation holes 118, and the generation of these a little holes 118 will have influence on the lead key closing process of follow-up encapsulation, for example be to produce lead to peel off easily, or problem such as the electrical property between lead and the welded gasket is not good.
Summary of the invention
Therefore, the invention provides a kind of manufacture method of image sensor element, can keep the complete of welded gasket surface, thereby guarantee that follow-up lead key closing process can carry out well.
The invention provides a kind of manufacture method of image sensor element; be applicable to a substrate with at least one welded gasket; wherein in substrate, be formed with a plurality of photo sensitive diode sensitive areas; and on substrate, be formed with a dielectric layer at least; and welded gasket is arranged in the dielectric layer; and one first protective layer with an opening is set on dielectric layer; and in opening, expose to small part welded gasket surface; the method forms one second protective layer on first protective layer with in the opening; on second protective layer, form a colored light filter membrane layer again;, in second protective layer and colored light filter membrane layer on form a flatness layer, on flatness layer, form a plurality of lenticules more thereafter.
The invention provides the manufacture method of another kind of image sensor element; be applicable to a substrate with at least one welded gasket; wherein in substrate, be formed with a plurality of photo sensitive diode sensitive areas; and on substrate, be formed with a dielectric layer at least; and welded gasket is arranged in the dielectric layer; the method forms a protective layer on dielectric layer; the composition protective layer is to form an opening in the protective layer above the small part welded gasket again; and the reserve part protective layer is not removed to cover to small part welded gasket surface in opening; then; on protective layer, form a colored light filter membrane layer; on protective layer and colored light filter membrane layer, form a flatness layer again, on flatness layer, form a plurality of lenticules thereafter.
And; in the manufacture method of two kinds of above-mentioned image sensor elements; wherein also be included in and form after the flatness layer on second protective layer (protective layer) and the colored light filter membrane layer; and before forming lenticule on the flatness layer, remove second protective layer (protective layer) on the welded gasket surface in the opening.
Technology as above-mentioned image sensor element; because during forming colored light filter membrane layer and lenticule; the surface of welded gasket is formed with protective layer and is not exposed; therefore can avoid the welded gasket surface by the destruction of above-mentioned colored light filter membrane layer and the employed chemical liquid of lenticule technology, thereby can keep the complete of welded gasket surface.
For above-mentioned purpose of the present invention, feature and advantage can be become apparent, a preferred embodiment cited below particularly, and conjunction with figs. are described in detail below.
Description of drawings
Figure 1A to Fig. 1 D illustrate is the generalized section of the manufacturing process of conventional images sensor element;
Fig. 2 A to Fig. 2 F illustrate is the generalized section of the manufacturing process of a kind of image sensor element of the preferred embodiment of the present invention;
Fig. 3 A to Fig. 3 F illustrate is the generalized section of the manufacturing process of a kind of image sensor element of another preferred embodiment of the present invention.
Description of reference numerals
100,200,300: substrate
102,202,302: photo sensitive diode sensitive areas
104,204,304: dielectric layer
106,206,306: welded gasket
108,208,220,308,308a, 308b: protective layer
110,210,310: opening
112,212,312: colored light filter membrane layer
114,214,314: flatness layer
116,216,316: lenticule
Embodiment
First embodiment
Fig. 2 A to Fig. 2 F illustrate is the generalized section of the manufacturing process of a kind of image sensor element of the preferred embodiment of the present invention, and for asking for simplicity, and avoid the restriction that causes the present invention unnecessary, clipped member and corresponding explanation thereof in following technology.
At first, please refer to Fig. 2 A, a semiconductor silicon substrate 200 is provided, and in semiconductor silicon substrate 200, form a plurality of photo sensitive diode sensitive areas 202, when light forms lens (not illustrating) when being incident to photo sensitive diode sensitive areas 202 via image, can convert light signal to the signal of telecommunication.And a large amount of photo sensitive diode sensitive areas 202 is lined up array, in substrate 200 surfaces, can form many pattern units, that is be so-called pixel (pixels).
Then, please continue A, on substrate 200, be formed with dielectric layer 204 at least, and in dielectric layer 204, be formed with welded gasket 206 at least with reference to Fig. 2.The material of welded gasket 206 for example is an aluminum metal herein, and this welded gasket 206 is used for being connected with external circuit, uses this image sensor element of control.
Then; please continue A with reference to Fig. 2; on dielectric layer 204 and welded gasket 206 surfaces, form the protective layer 208 of composition; and the protective layer 208 of this composition has an opening 210; and in opening 210, expose to small part welded gasket 206 surfaces; wherein the material of protective layer 208 for example is a silicon nitride, the method for its formation for example be chemical vapour deposition technique (chemical vapor deposition, CVD).
Then; please refer to Fig. 2 B; on substrate 200, form thin protective layer 220 with protective mulch 208 and opening 210; wherein the material of this protective layer 220 for example is silica or silicon nitride; the method that forms this protective layer 220 for example is to use chemical vapour deposition technique to form the slightly conformal protective layer 220 of one deck in protective layer 208 and opening 210, and the thickness of this protective layer 220 for example can be between 250 dust to 500 dusts.
Then; please refer to Fig. 2 C; form colored light filter membrane layer 212 on the protective layer outside the opening 210 220, wherein this colored light filter membrane layer 212 for example is to have three kinds of different colors (red, blue, green), and is covered in respectively on the different photo sensitive diode sensitive areas 202.Wherein the formation method of this colored light filter membrane layer 212 for example is the colored light filter membrane layer (for example being red) that forms first kind of color with existing means, the colored light filter membrane layer of this first kind of color is formed by red pigment, then, form the colored light filter membrane layer (for example being blue) of second kind of color with existing means, the colored light filter membrane layer of this second kind of color is formed by blue pigment, thereafter, form the colored light filter membrane layer (for example be green) of the third color with existing means, the colored light filter membrane layer of this third color is formed by viridine green.
Then; please refer to Fig. 2 D; on colored light filter membrane layer 212 and protective layer 220, form the flatness layer 214 of composition; so that the flattening surface of colored light filter membrane layer 212; and in this flatness layer 214, expose opening 210 and be formed on protective layer 220 in the opening 210; wherein the material of this flatness layer 214 is transparent material (transparent material), and it can be formed by transparent macromolecule polymeric material.
Because during the technology of above-mentioned formation colored light filter membrane layer 212 and flatness layer 214; be formed with protective layer 220 on the surface of welded gasket 206; that is be the surface that does not expose this welded gasket 206, therefore can protect the surface of welded gasket 206 not formed the erosion of chemical liquids such as colored light filter membrane layer 212, flatness layer 214 employed photoresists and developer solution.
Then, please refer to Fig. 2 E, remove protective layer 220 in the opening 210 to expose the surface of welded gasket 206, wherein the method that removes of protective layer 220 for example is to use the dry-etching method.It should be noted that because this step that removes protective layer 220 is just carried out after forming flatness layer 214 herein, thereby can avoid this to remove method undermining the complete of colored light filter membrane layer 212.
And the material of above-mentioned protective layer 220 is preferably and can be removed by the employed method that removes in this step easily, to reduce or to avoid this to remove the infringement that method causes colored light filter membrane layer 212 or flatness layer 214.
In addition; because in the step of Fig. 2 B; the very thin thickness of formed protective layer 220 also helps to make that protective layer 220 is easier to be removed, and can reduce or avoid when removing protective layer 220 infringement that colored light filter membrane layer 212 or flatness layer 214 are caused equally.
Then, please refer to Fig. 2 F, on flatness layer 214, form a plurality of lenticules 216 (micro lens), and this is the corresponding different respectively colored light filter membrane layer 212 of lens 216 slightly, this slightly lens 216 incident ray of image can be focused on the photo sensitive diode sensitive areas 202 on the surface that be projected to image sensor element.Wherein this slightly the material of lens 216 for example be to use the photo anti-corrosion agent material of high light transmittance, generally be to use positive photoresist, the method of its formation for example is that above-mentioned photo anti-corrosion agent material is coated on the flatness layer 214, then carry out the step of exposure imaging, and form discontinuous photoresist pattern in the top of every single pixel (that is referring to photo sensitive diode sensitive areas 202), then, heat-treat photoresist is patterned into circular-arc, to form the lenticule 216 of tool lens focus function.Via the technology of above-mentioned Fig. 2 A to Fig. 2 F, can finish the making of image sensor element.
Second embodiment
Fig. 3 A to Fig. 3 F illustrate is the generalized section of the manufacturing process of a kind of image sensor element of another preferred embodiment of the present invention, same, for asking for simplicity, and avoid the restriction that causes the present invention unnecessary, clipped member and corresponding explanation thereof in following technology.。
At first, please refer to Fig. 3 A, a semiconductor silicon substrate 300 is provided, and in semiconductor silicon substrate 300, form a plurality of photo sensitive diode sensitive areas 302, when light forms lens (not illustrating) when being incident to photo sensitive diode sensitive areas 302 via image, can convert light signal to the signal of telecommunication.
Then, please continue A, on substrate 300, be formed with dielectric layer 304 at least, and in dielectric layer 304, be formed with welded gasket 306 at least with reference to Fig. 3.Then, form protective layer 308 on dielectric layer 304 and welded gasket 306 surfaces, wherein the material of protective layer 308 for example is that silicon nitride forms, and the method for formation for example is a chemical vapour deposition technique.
Then; please refer to Fig. 3 B; the above-mentioned protective layer 308 of composition has the protective layer 308b of opening 310 with formation, and its split shed 310 is positioned to the top of small part welded gasket 306, and has thin protective layer 308a to cover to small part welded gasket 306 surfaces in opening 310.Wherein form above-mentioned method with protective layer 308b of opening 310; it for example is to form to have the patterned photoresist layer (not illustrating) of opening 310 to expose the protective layer 308 of welded gasket 306 tops on protective layer 308; then remove the protective layer 308 of photoresist layer unmasked portion to form opening 310 with the dry-etching method again; and in the technology of above-mentioned removal partial protection layer 308, the protective layer in the opening 310 308 is not removed fully with formation and be covered in to the protective layer 308a on small part welded gasket 306 surfaces.
Then; please refer to Fig. 3 C; protective layer 308b outside opening 310 goes up and forms colored light filter membrane layer 312, and wherein this colored light filter membrane layer 312 for example is to have three kinds of different colors (red, blue, green), and is covered in respectively on the different photo sensitive diode sensitive areas 302.Wherein the formation method of this colored light filter membrane layer 312 for example is the colored light filter membrane layer (for example being red) that forms first kind of color with existing means, the colored light filter membrane layer of this first kind of color is formed by red pigment, then, form the colored light filter membrane layer (for example being blue) of second kind of color with existing means, the colored light filter membrane layer of this second kind of color is formed by blue pigment, thereafter, form the colored light filter membrane layer (for example be green) of the third color with existing means, the colored light filter membrane layer of this third color is formed by viridine green.
Then; please refer to Fig. 3 D; on colored light filter membrane layer 312 and protective layer 308b, form the flatness layer 314 of composition; so that the flattening surface of colored light filter membrane layer 312; and in this flatness layer 314, expose protective layer 308a in opening 310 and the opening 310; wherein the material of this flatness layer 314 is transparent material (transparent material), and it can be formed by transparent macromolecule polymeric material.
Because during the technology of above-mentioned formation colored light filter membrane layer 312 and flatness layer 314; be formed with protective layer 308a on the surface of welded gasket 306; that is be the surface that does not expose this welded gasket 306, therefore can protect the surface of welded gasket 306 not formed the erosion of chemical liquids such as colored light filter membrane layer 312, flatness layer 314 employed photoresists and developer solution.
Then, please refer to Fig. 3 E, the protective layer 308a in the removal opening 310 is to expose the surface of welded gasket 306, and the method for wherein removing protective layer 308a for example is to use the dry-etching method.Same, because this step that removes protective layer 308a just carries out after forming flatness layer 314, thereby can avoid this to remove method undermining the complete of colored light filter membrane layer 312.
And the material of above-mentioned protective layer 308a is preferably and can be removed by the employed method that removes in this step easily, to reduce or to avoid this to remove the infringement that method causes colored light filter membrane layer 312 or flatness layer 314.
In addition; because in the step of Fig. 3 B; the very thin thickness of protective layer 308a of the welded gasket that is formed at 306 tops; also help to make that protective layer 308a is easier to be removed, and can reduce or avoid when removing protective layer 308a infringement that colored light filter membrane layer 312 or flatness layer 314 are caused equally.
Then, please refer to Fig. 3 F, on flatness layer 314, form a plurality of lenticules 316 (micro lens), and this is the corresponding different respectively colored light filter membrane layer 312 of lens 316 slightly, and the incident ray of image can be focused on the photo sensitive diode sensitive areas 302 that is projected to the image sensor element surface.Wherein this slightly the material of lens 316 for example be to use the photo anti-corrosion agent material of high light transmittance, generally be to use positive photoresist, the method of its formation for example is that above-mentioned photo anti-corrosion agent material is coated on the flatness layer 314, then carry out the step of exposure imaging, and form discontinuous photoresist pattern in the top of every single pixel (that is referring to photo sensitive diode sensitive areas 302), then heat-treat photoresist is patterned into circular-arc, to form the lenticule 316 of tool lens focus function.Via the technology of above-mentioned Fig. 3 A to Fig. 3 F, can finish the making of image sensor element.
And; in above-mentioned first embodiment and second embodiment; the removal of protective layer 220 (308a) is after flatness layer 214 (314) definition are finished; lenticule 216 (316) carries out before forming, to reduce or to avoid this to remove the infringement that protective layer 220 (308a) causes colored light filter membrane layer 212 (312) or flatness layer 214 (314).Yet; the present invention is not limited thereto; the opportunity that removes of the protective layer 220 (308a) of the above embodiment of the present invention; can also be after lenticule 216 (316) definition be finished; be preferably after forming the photoresist pattern; carry out before the heat treatment; so can further avoid the welded gasket surface to be formed the erosion of lenticule 216 (316) employed photoresists and developer solution, also can reduce or avoid this to remove the infringement that protective layer 220 (308a) causes lenticule 216 (316).
In sum; in the technology of image sensor element of the present invention; because during forming colored light filter membrane layer and lenticule; be formed with thin protective layer in the surface of welded gasket; therefore can avoid the welded gasket surface to be destroyed by above-mentioned colored light filter membrane layer and the employed chemical liquid of lenticule technology; thereby can keep the complete of welded gasket surface, further can make follow-up lead key closing process correctly and well to be implemented.
And, because this technology that removes the protective layer on welded gasket surface can be carried out, therefore can avoid when removing protective layer, undermining the complete of colored light filter membrane layer after the flatness layer definition is finished.
In addition; because this technology that removes the protective layer on welded gasket surface can be can also be after lenticule definition be finished; be preferably after forming the photoresist pattern; carry out before the heat treatment; so can further avoid the welded gasket surface to be formed employed photoresist of lenticule and developer solution erosion, also can reduce or avoid this to remove the infringement that protective layer causes lenticule.
Even,, therefore be easier to be removed, thereby can reduce or avoid when removing protective layer, colored light filter membrane layer, flatness layer or lenticule to be caused damage owing to be formed at the very thin thickness of the protective layer on the welded gasket.
Though the present invention discloses as above in conjunction with the preferred embodiments; so it is not to be used for limiting the present invention; any those skilled in the art; without departing from the spirit and scope of the present invention; when can being used for a variety of modifications and variations, so protection scope of the present invention is with being as the criterion that claims were defined.
Claims (7)
1. the manufacture method of an image sensor element, be applicable to a substrate with at least one welded gasket, wherein in this substrate, be formed with a plurality of photo sensitive diode sensitive areas, and on this substrate, be formed with a dielectric layer at least, and this welded gasket is arranged in this dielectric layer, and this manufacture method comprises the following steps:
On this dielectric layer, form a protective layer;
This protective layer of composition, with formation one opening in this protective layer above this welded gasket of small part, and this protective layer of reserve part is not removed in this opening, to cover to this welded gasket surface of small part;
On the protective layer outside this opening, form a colored light filter membrane layer;
Form a flatness layer on this protective layer and this colored light filter membrane layer, this flatness layer exposes this protective layer in this opening and this opening; And
On this flatness layer, form a plurality of lenticules.
2. the manufacture method of image sensor element as claimed in claim 1; wherein also be included in and form after this flatness layer on this protective layer and this colored light filter membrane layer; and before forming those lenticules on this flatness layer, remove this protective layer that keeps in this opening.
3. the manufacture method of image sensor element as claimed in claim 2, the method that wherein removes this protective layer that keeps in this opening comprises the dry-etching method.
4. the manufacture method of image sensor element as claimed in claim 1 wherein forms those lenticular methods and comprises the following steps:
On this flatness layer, form a microlens material layer;
This microlens material layer of composition is to form a plurality of microlens pattern; And
Those microlens pattern are carried out a heat treatment to form those lenticules.
5. the manufacture method of image sensor element as claimed in claim 4 wherein also is included in this microlens material layer of composition forming after those microlens pattern, and this microlens pattern is carried out removing this protective layer that keeps in this opening before this heat treatment.
6. the manufacture method of image sensor element as claimed in claim 5, the method that wherein removes this protective layer that keeps in this opening comprises the dry-etching method.
7. the manufacture method of image sensor element as claimed in claim 1, wherein the material of this protective layer comprises silicon nitride.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200310116439 CN100490163C (en) | 2003-11-21 | 2003-11-21 | Manufacturing method of image sensor element |
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| CN 200310116439 CN100490163C (en) | 2003-11-21 | 2003-11-21 | Manufacturing method of image sensor element |
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| CN1619826A CN1619826A (en) | 2005-05-25 |
| CN100490163C true CN100490163C (en) | 2009-05-20 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4391497B2 (en) * | 2006-05-19 | 2009-12-24 | シャープ株式会社 | COLOR SENSOR, COLOR SENSOR MANUFACTURING METHOD, SENSOR, AND ELECTRONIC DEVICE |
| CN103700679A (en) * | 2013-12-24 | 2014-04-02 | 颀中科技（苏州）有限公司 | Protection method of lug generating and manufacture procedure |
| CN107394007B (en) * | 2017-07-31 | 2019-06-14 | 渤海大学 | A method of suitable for the vulcanization of superstrate structural membrane solar cell or selenizing |
| CN110998851B (en) * | 2019-11-01 | 2023-10-20 | 深圳市汇顶科技股份有限公司 | Method for windowing chip electrode and chip |
| CN110808259A (en) * | 2019-11-25 | 2020-02-18 | 华天慧创科技（西安）有限公司 | Wafer lens module |
| CN111312602B (en) * | 2020-02-26 | 2022-07-05 | 厦门通富微电子有限公司 | Packaging method |
-
2003
- 2003-11-21 CN CN 200310116439 patent/CN100490163C/en not_active Expired - Lifetime
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| Publication number | Publication date |
|---|---|
| CN1619826A (en) | 2005-05-25 |
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