CN103700679A - Protection method of lug generating and manufacture procedure - Google Patents
Protection method of lug generating and manufacture procedure Download PDFInfo
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- CN103700679A CN103700679A CN201310721960.2A CN201310721960A CN103700679A CN 103700679 A CN103700679 A CN 103700679A CN 201310721960 A CN201310721960 A CN 201310721960A CN 103700679 A CN103700679 A CN 103700679A
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Abstract
The invention discloses a protection method of a lug generating and manufacture procedure. The method comprises the steps of providing a to-be-processed wafer, wherein the wafer is provided with a metallic gasket which exposes the upper surface of the wafer and a sensitive element; is forming a light-sensitive material layer on the wafer, wherein the light-sensitive material layer covers the area of the upper surface of the wafer exposed by the sensitive element; providing a photomask used for exposing and developing, and locating and protecting the light-sensitive material layer of the sensitive element; forming metal layers below lugs on the integrated wafer; forming the lugs on metal layers below the lugs above the metal gasket; removing the metal layers below the lugs among the lugs; removing the light-sensitive material layer for protecting the sensitive element, and exposing the sensitive element. According to the protection method of the lug generating and manufacture procedure, the sensitive element can be effectively protected in the lug manufacturing process, and the damage to the sensitive element can be prevented.
Description
Technical field
The present invention relates to electronic semi-conductor field, relate in particular to a kind of semiconductor crystal wafer encapsulation.
Background technology
In semiconductor industry, the production of chip is mainly divided into the making of circuit and these two stages of the packaging and testing of chip.
Previously the packaged type of cmos image sensor was mostly and beat gold thread (Wire Bond), because of chip volume court just: light, thin, short, little future development, the mode of encapsulation also turns to chip package by beating gold thread.
Chip package need just can be reached the object of combination by the projection of chip surface, and the processing procedure of projection growth is mainly divided into four major parts:
1. sputter (Sputter): dry ecthing (Dry Etch) and sputter form metal (UBM, Under-bump metal) under projection;
2. gold-tinted: upper photoresistance, exposure, develops;
3. electroplate;
4. etching: removing photoresistance, removes metal under projection
And be exposed to surperficial lenticule (Micro lens) on complementary metal oxide semiconductors (CMOS) (CMOS, Complementary Metal Oxide Semiconductor) imageing sensor, may in above processing procedure, produce damage.
Prior art shortcoming:
1. in projection growth process, the dry ecthing of sputter is in order to etch away the oxide layer on aluminium pad (Al pad) surface, is physical property etching, due to physical property etching non-selectivity, so also can damage, is exposed to surperficial lenticule on chip in etching aluminium pad.
2. exposed lenticule contacts and can be damaged with some chemical liquid in lug manufacturing process.
Summary of the invention
The object of the present invention is to provide a kind of guard method of projection growth process, senser is not damaged.
For realizing above goal of the invention, the present invention adopts following technical scheme: a kind of guard method of projection growth process, comprising:
Provide wafer to be processed, the metal gasket that is provided with the upper surface that exposes wafer and the senser of described wafer;
On wafer, form photosensitive material layer, described photosensitive material layer covers the region that senser exposes wafer upper surface;
Provide light shield, exposure imaging, the photosensitive material layer of location protection senser;
On whole wafer, form projection lower metal layer;
On the projection lower metal layer being positioned at above metal gasket, form projection;
Remove the projection lower metal layer between projection;
Remove the photosensitive material layer of protection senser, expose senser.
As a further improvement on the present invention, described photosensitive material layer also covers metal gasket.
As a further improvement on the present invention, before forming projection lower metal layer on described wafer, also comprise dry etch process, remove the oxide layer on metal gasket.
As a further improvement on the present invention, after described exposure imaging, photosensitive material layer only retains and covers the part that senser exposes wafer upper surface.
As a further improvement on the present invention, described projection lower metal layer forms by sputter.
As a further improvement on the present invention, the formation step of described projection comprises gold-tinted, plating, removing photoresistance.
As a further improvement on the present invention, the method for the photosensitive material layer of described removal protection senser is to adopt the chemical liquid that can not injure senser to clean.
As a further improvement on the present invention, described senser is lenticule.
As a further improvement on the present invention, described metal gasket is aluminium pad.
Compared to prior art; the present invention effectively protects lenticule in lug manufacturing process; avoided lenticular damage; while making the test of module on chip, picture signal is more effectively concentrated on inner photodetector; thereby improve the sensitivity of cmos image sensor, the method is without the main flow process that changes projection growth, and flow process is simple; the method can be used projection grow existing board, technology and raw material.
Accompanying drawing explanation
Fig. 1 is the cutaway view of the wafer that uses in the guard method of projection growth process of the present invention.
Fig. 2 forms photosensitive material layer on the wafer shown in Fig. 1.
Fig. 3 is used light shield and uses irradiation on the basis shown in Fig. 2.
Fig. 4 develops on the basis shown in Fig. 3.
Fig. 5 is dry ecthing on the basis shown in Fig. 4.
Fig. 6 forms projection lower metal layer on the basis shown in Fig. 5.
Fig. 7 forms projection on the basis shown in Fig. 6.
Fig. 8 is the projection lower metal layer of removing on the basis shown in Fig. 7 between projection.
Fig. 9 removes the lenticular photosensitive material layer of protection on the basis shown in Fig. 7.
Embodiment
As shown in Fig. 1-9, the guard method of projection growth process of the present invention, it comprises the steps S1 to S7.
Refer to Fig. 1, S1: provide wafer 100 to be processed, the metal gasket 10 that is provided with the upper surface 101 that exposes wafer 100 and the senser 20 of described wafer 100.Described metal gasket 10 is aluminium pad (Al pad), and described senser 20 is lenticule (Micro lens).
Refer to Fig. 2, S2: on wafer 100, form photosensitive material layer 30, described photosensitive material layer 30 covers the region that metal gasket 10 and lenticule 20 expose wafer upper surface.In this step, described photosensitive material layer 30 forms by being cleaned the photosensitive material deposit of removing by chemical liquid.
Really, in other embodiments, the photosensitive material layer 30 forming in above-mentioned steps 2 can only cover the region that lenticule 20 exposes wafer upper surface 101.
Refer to Fig. 3 and 4, S3: provide light shield 40, exposure imaging, the photosensitive material layer 30 of location protection lenticule 20.After described exposure imaging, photosensitive material layer 30 only retains and covers the part that lenticule 20 exposes wafer 100 upper surfaces.
Refer to Fig. 5 and 6, S4: on whole wafer 100, form projection lower metal layer 50(Under-bump metal, be called for short UBM).
Refer to Fig. 7, S5: on metal gasket 10, form projection 60.The formation step of described projection 60 comprises gold-tinted, plating, removing photoresistance.
Refer to Fig. 8, S6: remove the projection lower metal layer 50 between projection 60.
Refer to Fig. 9, S7: remove the photosensitive material layer 30 of protection lenticule 20, expose lenticule 20.The method of the photosensitive material layer 30 of described removal protection lenticule 20 is to adopt the chemical liquid that can not injure lenticule 20 to clean.Therefore in this step, described chemical liquid cleans while delustering quick material protection layer 30, both protection against light sensitivity layer 30 can be removed and totally and not can be hurt lenticule 20.
In step S4, also comprise, form projection lower metal layer 50 on described wafer 100 before, also comprise dry ecthing (Dry Etch) processing, remove the oxide layer on metal gasket 10.Described dry etch process is that whole wafer 100 is carried out, and because there being the protection of photosensitive material layer 30, thereby the step of this dry ecthing can not form impact to lenticule 20.Described projection lower metal layer 50 forms by sputter (Sputter).
Owing to adding, formed photosensitive material layer 30 in lug manufacturing process, so dry etch process can not hurt lenticule 20, and when going photosensitive material layer 30 with chemical liquid, again photosensitive material layer 30 has been removed and totally and not can be hurt lenticule 20.In sum; compared to prior art; the present invention effectively protects lenticule 20 in lug manufacturing process; avoided the damage of lenticule 20, while making the test of module on chip, picture signal is more effectively concentrated on inner photodetector, thus the sensitivity that improves cmos image sensor; the method is without the main flow process that changes projection 60 growths; flow process is simple, and the method can be used projection 60 growth existing board, technology and raw materials.
In sum, these are only preferred embodiment of the present invention, should not limit the scope of the invention with this, i.e. every simple equivalence of doing according to the claims in the present invention book and description of the invention content changes and modifies, and all should still remain within the scope of the patent.
Claims (9)
1. a guard method for projection growth process, it comprises:
Wafer to be processed is provided, and described wafer is provided with metal gasket and the senser of the upper surface that exposes wafer;
On wafer, form photosensitive material layer, described photosensitive material layer covers the region that senser exposes wafer upper surface;
Provide light shield, exposure imaging, the photosensitive material layer of location protection senser;
On whole wafer, form projection lower metal layer;
On the projection lower metal layer being positioned at above metal gasket, form projection;
Remove the projection lower metal layer between projection;
Remove the photosensitive material layer of protection senser, expose senser.
2. the guard method of projection growth process as claimed in claim 1, is characterized in that: described photosensitive material layer also covers metal gasket.
3. the guard method of projection growth process as claimed in claim 1, is characterized in that: before forming projection lower metal layer on described wafer, also comprise dry etch process, remove the oxide layer on metal gasket.
4. the guard method of projection growth process as claimed in claim 1, is characterized in that: after described exposure imaging, photosensitive material layer only retains and covers the part that senser exposes wafer upper surface.
5. the guard method of projection growth process as claimed in claim 1, is characterized in that: described projection lower metal layer forms by sputter.
6. the guard method of projection growth process as claimed in claim 1, is characterized in that: the formation step of described projection comprises gold-tinted, plating, removing photoresistance.
7. the guard method of projection growth process as claimed in claim 1, is characterized in that: the method for the photosensitive material layer of described removal protection senser is to adopt the chemical liquid that can not injure senser to clean.
8. the guard method of projection growth process as claimed in claim 1, is characterized in that: described senser is lenticule.
9. the guard method of projection growth process as claimed in claim 1, is characterized in that: described metal gasket is aluminium pad.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310721960.2A CN103700679A (en) | 2013-12-24 | 2013-12-24 | Protection method of lug generating and manufacture procedure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310721960.2A CN103700679A (en) | 2013-12-24 | 2013-12-24 | Protection method of lug generating and manufacture procedure |
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| Publication Number | Publication Date |
|---|---|
| CN103700679A true CN103700679A (en) | 2014-04-02 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201310721960.2A Pending CN103700679A (en) | 2013-12-24 | 2013-12-24 | Protection method of lug generating and manufacture procedure |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108615688A (en) * | 2018-05-08 | 2018-10-02 | 江苏汇成光电有限公司 | A kind of golden bumping manufacturing process of IC chip |
| CN111146170A (en) * | 2019-12-30 | 2020-05-12 | 颀中科技（苏州）有限公司 | Packaging structure and forming method thereof |
| CN111312602A (en) * | 2020-02-26 | 2020-06-19 | 厦门通富微电子有限公司 | Packaging method |
| CN111640683A (en) * | 2020-06-08 | 2020-09-08 | 厦门通富微电子有限公司 | Method for preparing lug on driving chip |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6426283B1 (en) * | 2000-12-01 | 2002-07-30 | Taiwan Semiconductor Manufacturing Co., Ltd | Method for bumping and backlapping a semiconductor wafer |
| CN1619826A (en) * | 2003-11-21 | 2005-05-25 | 联华电子股份有限公司 | Manufacturing method of image sensor element |
| CN101110398A (en) * | 2006-07-21 | 2008-01-23 | 日月光半导体制造股份有限公司 | Flip chip and its manufacturing method |
| US20100084763A1 (en) * | 2008-10-06 | 2010-04-08 | Wan-Ling Yu | Metallic Bump Structure Without Under Bump Metallurgy And Manufacturing Method Thereof |
-
2013
- 2013-12-24 CN CN201310721960.2A patent/CN103700679A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6426283B1 (en) * | 2000-12-01 | 2002-07-30 | Taiwan Semiconductor Manufacturing Co., Ltd | Method for bumping and backlapping a semiconductor wafer |
| CN1619826A (en) * | 2003-11-21 | 2005-05-25 | 联华电子股份有限公司 | Manufacturing method of image sensor element |
| CN101110398A (en) * | 2006-07-21 | 2008-01-23 | 日月光半导体制造股份有限公司 | Flip chip and its manufacturing method |
| US20100084763A1 (en) * | 2008-10-06 | 2010-04-08 | Wan-Ling Yu | Metallic Bump Structure Without Under Bump Metallurgy And Manufacturing Method Thereof |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108615688A (en) * | 2018-05-08 | 2018-10-02 | 江苏汇成光电有限公司 | A kind of golden bumping manufacturing process of IC chip |
| CN111146170A (en) * | 2019-12-30 | 2020-05-12 | 颀中科技（苏州）有限公司 | Packaging structure and forming method thereof |
| CN111312602A (en) * | 2020-02-26 | 2020-06-19 | 厦门通富微电子有限公司 | Packaging method |
| CN111640683A (en) * | 2020-06-08 | 2020-09-08 | 厦门通富微电子有限公司 | Method for preparing lug on driving chip |
| CN111640683B (en) * | 2020-06-08 | 2022-03-29 | 厦门通富微电子有限公司 | Method for preparing lug on driving chip |
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Application publication date: 20140402 |
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