CN100483670C - 浅沟槽隔离结构的形成方法 - Google Patents
浅沟槽隔离结构的形成方法 Download PDFInfo
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- CN100483670C CN100483670C CNB200610119055XA CN200610119055A CN100483670C CN 100483670 C CN100483670 C CN 100483670C CN B200610119055X A CNB200610119055X A CN B200610119055XA CN 200610119055 A CN200610119055 A CN 200610119055A CN 100483670 C CN100483670 C CN 100483670C
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- layer
- barrier layer
- isolation structure
- pad oxide
- etching
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CNB200610119055XA CN100483670C (zh) | 2006-12-04 | 2006-12-04 | 浅沟槽隔离结构的形成方法 |
Applications Claiming Priority (1)
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CNB200610119055XA CN100483670C (zh) | 2006-12-04 | 2006-12-04 | 浅沟槽隔离结构的形成方法 |
Publications (2)
Publication Number | Publication Date |
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CN101197304A CN101197304A (zh) | 2008-06-11 |
CN100483670C true CN100483670C (zh) | 2009-04-29 |
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CNB200610119055XA Expired - Fee Related CN100483670C (zh) | 2006-12-04 | 2006-12-04 | 浅沟槽隔离结构的形成方法 |
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CN (1) | CN100483670C (zh) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110211918A (zh) * | 2019-05-30 | 2019-09-06 | 德淮半导体有限公司 | 半导体结构的制作方法及半导体结构 |
CN112366205B (zh) * | 2020-11-09 | 2021-10-22 | 长江存储科技有限责任公司 | 一种半导体器件及其制备方法 |
CN113035778A (zh) * | 2021-05-24 | 2021-06-25 | 晶芯成(北京)科技有限公司 | 一种半导体制造方法及其结构 |
CN116314006B (zh) * | 2023-05-26 | 2023-09-12 | 合肥晶合集成电路股份有限公司 | 一种半导体结构的制造方法 |
CN118039741A (zh) * | 2024-04-15 | 2024-05-14 | 浙江珏芯微电子有限公司 | 一种碲镉汞红外探测器接触电极的制备方法 |
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2006
- 2006-12-04 CN CNB200610119055XA patent/CN100483670C/zh not_active Expired - Fee Related
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CN101197304A (zh) | 2008-06-11 |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20111108 Address after: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Co-patentee after: Semiconductor Manufacturing International (Beijing) Corporation Patentee after: Semiconductor Manufacturing International (Shanghai) Corporation Address before: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Patentee before: Semiconductor Manufacturing International (Shanghai) Corporation |
|
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090429 Termination date: 20181204 |