CN100481319C - 用于高k介电材料的界面层 - Google Patents

用于高k介电材料的界面层 Download PDF

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Publication number
CN100481319C
CN100481319C CNB2005800238837A CN200580023883A CN100481319C CN 100481319 C CN100481319 C CN 100481319C CN B2005800238837 A CNB2005800238837 A CN B2005800238837A CN 200580023883 A CN200580023883 A CN 200580023883A CN 100481319 C CN100481319 C CN 100481319C
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layer
germanium
exposed surface
silicon
germanium layer
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Chinese (zh)
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CN1985352A (zh
Inventor
肖恩·G·托马斯
怕普·D·马尼尔
维达·依尔德瑞姆
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NXP USA Inc
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Freescale Semiconductor Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/662—Laminate layers, e.g. stacks of alternating high-k metal oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01356—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being a Group IV material and not being silicon, e.g. Ge, SiGe or SiGeC
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
    • H10D64/685—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered being perpendicular to the channel plane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/691—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator comprising metallic compounds, e.g. metal oxides or metal silicates 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H—ELECTRICITY
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6339—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H10P14/69392—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing hafnium, e.g. HfO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H10P14/69396—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing at least one rare earth metal element, e.g. oxides of lanthanides, scandium or yttrium

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Formation Of Insulating Films (AREA)
  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
CNB2005800238837A 2004-07-30 2005-06-16 用于高k介电材料的界面层 Expired - Fee Related CN100481319C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/903,841 US7320931B2 (en) 2004-07-30 2004-07-30 Interfacial layer for use with high k dielectric materials
US10/903,841 2004-07-30

Publications (2)

Publication Number Publication Date
CN1985352A CN1985352A (zh) 2007-06-20
CN100481319C true CN100481319C (zh) 2009-04-22

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CNB2005800238837A Expired - Fee Related CN100481319C (zh) 2004-07-30 2005-06-16 用于高k介电材料的界面层

Country Status (6)

Country Link
US (1) US7320931B2 (https=)
JP (1) JP2008508719A (https=)
KR (1) KR20070044441A (https=)
CN (1) CN100481319C (https=)
TW (1) TW200625657A (https=)
WO (1) WO2006023027A1 (https=)

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US7399666B2 (en) * 2005-02-15 2008-07-15 Micron Technology, Inc. Atomic layer deposition of Zr3N4/ZrO2 films as gate dielectrics
US7498247B2 (en) 2005-02-23 2009-03-03 Micron Technology, Inc. Atomic layer deposition of Hf3N4/HfO2 films as gate dielectrics
US8110469B2 (en) * 2005-08-30 2012-02-07 Micron Technology, Inc. Graded dielectric layers
US20070161214A1 (en) 2006-01-06 2007-07-12 International Business Machines Corporation High k gate stack on III-V compound semiconductors
US8692310B2 (en) 2009-02-09 2014-04-08 Spansion Llc Gate fringing effect based channel formation for semiconductor device
US8330381B2 (en) * 2009-05-14 2012-12-11 Ilumisys, Inc. Electronic circuit for DC conversion of fluorescent lighting ballast
US8268683B2 (en) * 2009-06-12 2012-09-18 Taiwan Semiconductor Manufacturing Company, Ltd. Method for reducing interfacial layer thickness for high-K and metal gate stack
EP2270840B1 (en) * 2009-06-29 2020-06-03 IMEC vzw Method for manufacturing an III-V material substrate and the substrate thereof
CN102509734A (zh) * 2011-11-08 2012-06-20 复旦大学 一种利用ald制备锗基mos电容的方法
US11696448B2 (en) * 2020-06-18 2023-07-04 Taiwan Semiconductor Manufacturing Company, Ltd. Memory device and method of forming the same
CN113823555B (zh) * 2021-09-03 2024-06-07 合肥安德科铭半导体科技有限公司 一种在绝缘体上制备锗薄膜的方法

Citations (4)

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US5825055A (en) * 1992-05-01 1998-10-20 Texas Instruments Incorporated Fabricating high-dielectric constant oxides on semiconductors using a GE buffer layer
CN1042775C (zh) * 1996-06-21 1999-03-31 河北工业大学 用锗进行硅/硅键合的方法及其制备的硅器件衬底片
US6593625B2 (en) * 2001-06-12 2003-07-15 International Business Machines Corporation Relaxed SiGe layers on Si or silicon-on-insulator substrates by ion implantation and thermal annealing
US20030228744A1 (en) * 2002-04-26 2003-12-11 Michihisa Kohno Manufacturing method of semiconductor device

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DE19533313A1 (de) * 1995-09-08 1997-03-13 Max Planck Gesellschaft Halbleiterstruktur für einen Transistor
US6750484B2 (en) * 1996-12-09 2004-06-15 Nokia Corporation Silicon germanium hetero bipolar transistor
US6723621B1 (en) * 1997-06-30 2004-04-20 International Business Machines Corporation Abrupt delta-like doping in Si and SiGe films by UHV-CVD
EP0926739A1 (en) * 1997-12-24 1999-06-30 Texas Instruments Incorporated A structure of and method for forming a mis field effect transistor
FR2783254B1 (fr) * 1998-09-10 2000-11-10 France Telecom Procede d'obtention d'une couche de germanium monocristallin sur un substrat de silicium monocristallin,et produits obtenus
US6184072B1 (en) 2000-05-17 2001-02-06 Motorola, Inc. Process for forming a high-K gate dielectric
JP3748218B2 (ja) * 2001-09-10 2006-02-22 日本電信電話株式会社 Ｍｉｓ型半導体装置の製造方法
US20030111678A1 (en) 2001-12-14 2003-06-19 Luigi Colombo CVD deposition of M-SION gate dielectrics
US6696332B2 (en) 2001-12-26 2004-02-24 Texas Instruments Incorporated Bilayer deposition to avoid unwanted interfacial reactions during high K gate dielectric processing
US6620713B2 (en) 2002-01-02 2003-09-16 Intel Corporation Interfacial layer for gate electrode and high-k dielectric layer and methods of fabrication
US6621114B1 (en) 2002-05-20 2003-09-16 Advanced Micro Devices, Inc. MOS transistors with high-k dielectric gate insulator for reducing remote scattering
US6995430B2 (en) * 2002-06-07 2006-02-07 Amberwave Systems Corporation Strained-semiconductor-on-insulator device structures
US6617639B1 (en) 2002-06-21 2003-09-09 Advanced Micro Devices, Inc. Use of high-K dielectric material for ONO and tunnel oxide to improve floating gate flash memory coupling

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5825055A (en) * 1992-05-01 1998-10-20 Texas Instruments Incorporated Fabricating high-dielectric constant oxides on semiconductors using a GE buffer layer
CN1042775C (zh) * 1996-06-21 1999-03-31 河北工业大学 用锗进行硅/硅键合的方法及其制备的硅器件衬底片
US6593625B2 (en) * 2001-06-12 2003-07-15 International Business Machines Corporation Relaxed SiGe layers on Si or silicon-on-insulator substrates by ion implantation and thermal annealing
US20030228744A1 (en) * 2002-04-26 2003-12-11 Michihisa Kohno Manufacturing method of semiconductor device

Also Published As

Publication number Publication date
US20060022283A1 (en) 2006-02-02
US7320931B2 (en) 2008-01-22
JP2008508719A (ja) 2008-03-21
KR20070044441A (ko) 2007-04-27
TW200625657A (en) 2006-07-16
CN1985352A (zh) 2007-06-20
WO2006023027A1 (en) 2006-03-02

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