CN100479203C - Method for manufacturing silicon foil for solar cell and dedicated apparatus therefor - Google Patents
Method for manufacturing silicon foil for solar cell and dedicated apparatus therefor Download PDFInfo
- Publication number
- CN100479203C CN100479203C CNB200510049692XA CN200510049692A CN100479203C CN 100479203 C CN100479203 C CN 100479203C CN B200510049692X A CNB200510049692X A CN B200510049692XA CN 200510049692 A CN200510049692 A CN 200510049692A CN 100479203 C CN100479203 C CN 100479203C
- Authority
- CN
- China
- Prior art keywords
- silicon
- solar cell
- crucible
- quartzy mouth
- foil
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Silicon Compounds (AREA)
- Photovoltaic Devices (AREA)
Abstract
This invention relates to preparation method and special device for silicon foil in solar cell. Wherein, the method comprises, heating and melting the silicon in sealed shell, and casting the to solidify and form; the main steps comprises, putting silicon material in crucible, adjusting its position to make its bottom quartz mouth near mould, filling protective gas, starting mould for orientational motion; in liquid medium, controlling the mould temperature, heating silicon material to melt and flow to mould; finally, solidifying to silicon foil and outputting. All the special devices in this invention have been said in aforementioned description. The invention produces product with less thickness, saves material, and has high efficiency and low cost; the device is reasonable in structure.
Description
Technical field
The present invention relates to a kind of solar cell manufacture method and special equipment, relate in particular to a kind of manufacture method and special equipment that is used for the silicon foil of solar cell.
Background technology
Existing crystal-silicon solar cell is that the solar-grade silicon of 270-320 μ m is made by thickness.Making the solar-grade silicon chip from quartz sand need be part the most expensive in the solar cell with expensive equipment and a large amount of energy.And present silicon material is wretched insufficiency, and development thin silicon sheet solar cell has seemed more and more urgent, more and more important.
Crystal-silicon solar cell has good development prospect, at first because silicon materials be a kind of development the earliest, uses the most extensively, reserves are a lot of on the earth, almost not have the semi-conducting material of murder by poisoning and pollution; Next is to make the existing superb technical foundation of solar cell, existing greater efficiency and very high stability with crystalline silicon.
From the angle of material, the absorption coefficient of light of amorphous silicon is very big, and the solar cell thickness of making is the thinnest, saves silicon materials most, yet because exist the S-W effect to make performance degradation, poor stability has seriously influenced its application.So the shared market share of amorphous silicon battery is less at present, and crystal silicon cell accounts for the market share more than 80%.
According to the absorbing properties of crystalline silicon, for AM1.0 solar radiation spectrum, 50 μ m silicon layers can absorb 90% above luminous energy, therefore, the silicon raw material that has silicon chip now might be reduced to below 1/10 fully in theory.
Method grown silicon films on inexpensive substrate such as human chemical vapour deposition (CVD), electron beam evaporation and vapor phase epitaxy are just arranged as far back as the seventies, but because the silicon fiml crystal grain that grows up to is very little, crystal boundary is compound big, and silicon is lepthymenia, a little less than the absorption too to light, therefore photoelectric efficiency is very low, fails to make solar cell with practical value.In order to obtain to have the polysilicon membrane of large-size crystal grain, a lot of methods have been proposed, for example, molecular beam figure epitaxial growth method, solid-phase crystallization method, zone melting recrystallization method, solution growth method and plasma jet method or the like.All these methods all have its merits and demerits separately.Though the manufacturing process that has is simple, the efficiency of solar cell of making is not high; The battery efficiency that has is higher, but manufacturing process is complicated.So far not seeing as yet in a word has cheap crystal silicon thin film battery to put on market in a large number.Logical investigation, analysis and experimental verification in a few years, it is quite difficult being developed into the crystal silicon thin film solar cell with practical value, and wants to reduce exponentially its cost, then extremely difficult especially.When being difficult in the preparation silicon thin-film battery, because the fusing point of silicon if adopt the high temperature deposition silicon fiml, require substrate heatproof height, purity height, otherwise the impurity in the substrate will pollute silicon fiml up to 1420 degree; If adopt low temperature depositing, then sedimentation time is oversize, often needs tens hours, and production efficiency is low.
Because social development is to the demand of the energy, the urgent hope of people can reduce to the solar cell manufacturing cost 1/2 to 1/3 of existing battery, and the silicon materials consumption reduces to 1/10, and battery efficiency is more than 10%, and the life-span was greater than 20 years.Realize that above-mentioned target critical is to produce the less silicon chip of thickness.In order to reach this purpose, need produce thickness is 40-60 μ m thin silicon sheet.This thin silicon sheet is thinner than general silicon ribbon, but thicker than general silicon thin film, so we are referred to as " silicon foil " with the silicon chip of this thickness, " silicon foil " speech that occurs in this patent is exactly this meaning.
Summary of the invention
Primary and foremost purpose of the present invention is to solve big, the more technical problem of materials of silicon wafer thickness that the existing in prior technology manufacturing is used for solar cell, thereby provide a kind of manufacture method that is used for the silicon foil of solar cell to save the silicon materials, significantly reduced the manufacturing cost of silion cell.
Second purpose of the present invention provided a kind of special equipment of high efficiency manufacture method of the silicon foil that is used for solar cell.
The technical problem that the present invention solves primary and foremost purpose is mainly solved by following technical proposals: a kind of manufacture method that is used for the silicon foil of solar cell, be included in the closed shell and cast coagulation forming, steps of the method are to the silicon heat fused with to silicon melt stream:
A, the silicon raw material that will be used to make solar cell are packed in the crucible, and the silicon raw material comprises pure silicon and a little foreign matter of phosphor or boron;
B, adjust the position of crucible in closed shell, to the crucible positioning and clamping, making the labial surface of the quartzy mouth of crucible bottom is 0.1-0.3mm to the distance of mould surface, and with positioning clamping device quartzy mouth is clamped;
C, closed shell vacuumized after, in it, comprise charging into protective gas to crucible;
D, start the directed uniform motion of mold, and mould surface is carried out temperature adjustment control, make mould surface keep a steady temperature value that is lower than the setting temperature of silicon by 0-200 ℃ liquid medium;
E, startup high frequency induction heater to silicon raw material heat fused in the crucible, make stationary temperature value that surpasses the silicon fusing point of silicon melt temperature maintenance in the crucible by radio-frequency induction coil, and this steady temperature value is the 1420-1520 degree;
F, silicon melt in the crucible is applied a constant pressure with protective gas; described constant pressure range is the 20-200 millimetres of mercury, and this pressure makes silicon melt flow on the mold from the outlet of quartzy mouth, and silicon melt forms weld pool; be frozen into silicon foil, silicon foil is exported through the silicon foil transmitting device.In the B step, the labial surface of quartzy mouth is to the distance of mould surface when big, silicon melt enters into the formed weld pool of wheel surface will be subjected to the move serious interference of caused air-flow of mold, thereby be difficult to form broad silicon foil, the present invention adopts the interval of 0.1-0.3mm, improve the stability of silicon weld pool significantly, can obtain wide and thin and uniform silicon foil; In the C step, in order not make original air pollution protective gas in closed shell and the crucible, make the silicon raw material obtain better protection, employing feeds protective gas after earlier closed shell being vacuumized again; In the D step, mold motion must be at the uniform velocity, and is even with the thickness that guarantees silicon foil; In the E step, the steady temperature value is selected this 1425-1520 degree for use, selected temperature must not only will surpass the fusing point of silicon, make the silicon fusing, and suitable superheating ratio to be arranged, make silicon melt flow out quartzy mouth smoothly and arrive mould surface formation weld pool, the selection of this superheating ratio is most important to the present invention, because the temperature of this superheating ratio and mould surface, the movement velocity of mold, the pressure of protective gas, the shape of quartzy mouth and the labial surface of structure and quartzy mouth and the factors such as distance of mold all connect each other, have only the temperature of this scope of selection can obtain high-quality silicon foil; In the constant pressure range described in the F step is the 20-200 millimetres of mercury, the shape that goes out the silicon seam of this pressure and quartzy mouth, silicon materials in quartzy mouth surface tension and crucible in the factors such as amount of silicon melt relevant, select this pressure should make silicon melt can flow out quartzy mouth smoothly, but can not select De Taigao so that silicon melt to be ejected on the mold, influence the evenness on silicon foil surface.
Described protective gas is the mist of inert gas or nitrogen and hydrogen.Silicon materials are oxidation very easily, and high temperature must lead to protective gas down, and protective gas can be used the inert gas argon gas, also can use reducing gas hydrogen, in order to reduce manufacturing cost, and can admixture nitrogen when using hydrogen.
The labial surface of described quartzy mouth be shaped as corrugated, the mould surface of Pei Heing is shaped as corresponding corrugated with it.The present invention is designed to corrugated with it, is because silicon materials are very crisp, makes very easily to fracture behind large stretch of silicon foil crackedly, can increase its strength and stiffness like this, has also increased daylighting area simultaneously, just helps the light absorption of silicon foil.
The labial surface of described quartzy mouth is shaped as the plane, and the mould surface shape of Pei Heing also is the plane with it.
Described mold is a runner, and the linear velocity of wheel surface is 0.5-10.0m/s.Select for use the speed of 0.5-10.0m/s both to improve the production efficiency of silicon foil significantly, the setting rate that can control silicon melt again is unlikely to too fast, makes the polycrystalline silicon grain size of silicon foil can meet the requirement of making solar cell.
Described mold is a movable plate, and its translational speed is 0.5-10.0m/s.The beneficial effect of this speed is identical with the beneficial effect that selection reached of runner speed.
Therefore, this method is to adopt silicon melt stream casting technology, promptly is to adopt heat silicon raw material, forms silicon melt, silicon melt flows to by quartzy mouth on the mould surface of close with it directed uniform motion and solidifies, and continuously casts required silicon foil by the shape of mould surface.Microcrystal silicon or polysilicon semiconductor silicon foil with even cross section can be produced continuously, output is big, and speed is fast, cost is low, is suitable for large-scale production.And the movement velocity of mold is to adjust according to different needs, and speed is big more, and the silicon foil thickness of formation is more little, so just can produce the silicon foil of very thin thickness.
The technical problem that the present invention solves second purpose is mainly solved by following technical proposals: a kind of special equipment of manufacture method of the silicon foil that is used for solar cell, in closed shell, be provided with crucible, outside at crucible is provided with radio-frequency induction coil, the quartzy mouth of crucible bottom is installed on the positioning clamping device, below quartzy mouth, mold is set, mold connects speed regulating device, the labial surface of quartzy mouth is 0.1-0.3mm to the distance of mould surface, be provided with the silicon foil transmitting device of crawler belt in mold one side, mold links to each other with register, register uses liquid medium to carry out temperature adjustment, liquid medium is supplied with by the isothermal liquid case, and closed shell also is connected with an air-breather with an air extractor.In order to implement said method of the present invention; closed shell must be set; feed the air-breather of protective gas and the air extractor that vacuumizes; guarantee to adopt radio-frequency induction coil melted silicon material, not oxidized and other gaseous impurity pollution when silicon melt is frozen into paper tinsel, the present invention adopts the interval of 0.1-0.3mm; improved the stability of silicon weld pool; so that obtain wide and thin silicon foil continuously,, need transmitting device output because silicon foil is thin and crisp.
Described crucible is made up of crucible body and quartzy mouth, on quartzy mouth, have two and go out the silicon seam, article two, go out the wide 0.5-2.0mm of being of seam of silicon seam, article two, the longitudinal section that goes out the silicon seam is combined into the V font, article two, go out silicon and be sewn on V font summit and cross and form an outlet, on quartzy mouth, also be provided with the location notch that is used for clamping.Article two, the longitudinal section that goes out silicon seam is designed to the V font, and two go out silicon and are sewn on V font summit and cross and form an outlet, and such design is to have enough flows when arriving outlet for silicon melt, guarantees that the silicon melt continous-stable outputs on the mold.
The labial surface of described quartzy mouth is shaped as corrugated, described mold is a runner, wheel surface is the corresponding corrugated face of cylinder, described quartzy mouth is positioned at the upper left side of the runner that clockwise rotates, the scope of the angle β of quartzy mouth center line and gravity vertical line is the 0-45 degree, this center line passes the center of runner, and the radius R of runner is that 150-400mm, width are 200-600mm.Because silicon materials are very crisp, make and very easily fracture behind large stretch of silicon foil crackedly, can increase its strength and stiffness like this, also increased daylighting area simultaneously, just help the light absorption of silicon foil.For the time of staying of silicon foil on wheel surface of the firm moulding of proper extension, make silicon foil can be successfully arrive at the silicon foil transmitting device along the rotation direction of runner, so the present invention is designed to described quartzy mouth to be positioned at the upper left side of the runner that clockwise rotates, the scope of the angle β of quartzy mouth center line and gravity vertical line is the 0-45 degree, and this center line passes the center of runner.
The labial surface of described quartzy mouth is shaped as corrugated, and described mold is a movable plate, and its surface is corresponding corrugated shape face, and the width of movable plate is 200-600mm, and described quartzy mouth is positioned at the top of movable plate, and the center line of quartzy mouth is perpendicular to movable plate.
The labial surface of described quartzy mouth is shaped as the plane, described mold is a runner, runner is shaped as the corresponding smooth face of cylinder, described quartzy mouth is positioned at the upper left side of the runner that clockwise rotates, the scope of the center line of quartzy mouth and the angle β of gravity vertical line is the 0-45 degree, this center line passes the center of runner, and the radius R of runner is that 150-400mm, width are 200-600mm.
The labial surface of described quartzy mouth is shaped as the plane, and described mold is a movable plate, and its surface is the plane, and the width of movable plate is 200-600mm, and described quartzy mouth is positioned at the top of movable plate, and the center line of quartzy mouth is perpendicular to movable plate.
Therefore, this equipment has rational in infrastructure, can realize producing efficiently the advantage of the silicon foil that the less solar cell of thickness uses smoothly.
Description of drawings
Fig. 1 is the system configuration schematic diagram of embodiment 1 special equipment.
Fig. 2 is the crucible perspective view with radio-frequency induction coil for Fig. 1.
Silicon melt flowed out and forms the profile that weld pool is frozen into paper tinsel when Fig. 3 was runner for mold among the embodiment 1.
Silicon melt flowed out and forms the profile that weld pool is frozen into paper tinsel when Fig. 4 was movable plate for mold among the embodiment 2,4.
Fig. 5 is the schematic diagram that cooperates of the runner on the quartzy mouth that has the corrugated labial surface among the embodiment 1 and the corrugated face of cylinder.
Fig. 6 is the quartzy mouth on plane and the schematic diagram that cooperates of the runner with smooth face of cylinder for having labial surface among the embodiment 3.
The structural representation that Fig. 7 matches for crucible, runner and silicon foil transmitting device among Fig. 1.
Embodiment
The method of this invention is: be included in the closed shell 1 and cast coagulation forming to silicon raw material heat fused with to silicon melt stream, steps of the method are:
A, the silicon raw material that will be used to make solar cell are packed in the crucible 2, and the silicon raw material comprises pure silicon and a little foreign matter of phosphor or boron;
B, to the crucible positioning and clamping: adjust the position of crucible 2 in closed shell 1, making the labial surface 2k of the quartzy mouth 2b of crucible 2 bottoms is 0.15mm to the distance of mould surface 3a, and clamp with the quartzy mouth 2b of 14 pairs of crucibles 2 of positioning clamping device, mold is a runner 3 in the present embodiment;
C, vacuumize by 8 pairs of closed shells 1 of air extractor after, feed argon gas by air-breather 9 to closed shell 1, also feeding argon gas to crucible 2 in;
D, the 3 directed uniform rotation of startup runner, the linear velocity of wheel surface 3a is 5m/s, and the labial surface 2k of described quartzy mouth 2b is shaped as corrugated 2f, and the wheel surface 3a of Pei Heing is corresponding corrugated face of cylinder 3f with it.And wheel surface 3a is carried out temperature adjustment control with 60 ℃ liquid medium, and in the present embodiment, liquid medium is selected water for use, and water is supplied with by constant temperature water tank;
E, startup high frequency induction heater heat by silicon raw materials in 5 pairs of crucibles of radio-frequency induction coil 2, the melted silicon raw material, and, make the temperature of crucible 2 interior silicon melts 15 keep the 1460 steady temperature values of spending by 7 monitoring of electric thermo-couple temperature measure and control device;
F, with argon gas silicon melts 15 in the crucible 2 are applied the constant pressure of one 100 millimetres of mercury, this pressure makes silicon melt 15 flow to wheel surface 3a from the outlet 2d of quartzy mouth 2b, form weld pool 15a, be frozen into silicon foil 15b gradually, silicon foil 15b is through 6 outputs of silicon foil transmitting device.
In the foregoing description 1 to 4, crucible 2 is that the silicon that goes out that is designed to two V fonts stitches 2c, and the silicon that goes out that also can be designed to as required more than 1 or 3 stitches 2c.
In embodiment 1 to 4, the mode of heating of crucible 2 is to adopt high frequency induction heater, also can adopt other firing equipment.
Claims (12)
1, a kind of manufacture method that is used for the silicon foil of solar cell is included in the closed shell (1) and casts coagulation forming to the silicon heat fused with to silicon melt stream, it is characterized in that steps of the method are:
A, the silicon raw material that will be used to make solar cell are packed in the crucible (2), and the silicon raw material comprises pure silicon and a little foreign matter of phosphor or boron;
B, the position of adjustment crucible (2) in closed shell (1), to crucible (2) positioning and clamping, making the labial surface (2k) of the quartzy mouth (2b) of crucible (2) bottom is 0.1-0.3mm to the distance of mould surface (3a), and with positioning clamping device (14) quartzy mouth (2b) is clamped;
C, closed shell (1) vacuumized after, in it, comprise to crucible (2) charging into protective gas;
D, start the directed uniform motion of mold, and mould surface (3a) is carried out temperature adjustment control, make steady temperature value that is lower than the setting temperature of silicon of mould surface (3a) maintenance by 0-200 ℃ liquid medium;
E, startup high frequency induction heater add fusing by radio-frequency induction coil (5) to the interior silicon raw material of crucible (2), make the interior silicon melt of crucible (2) (15) temperature keep a stationary temperature value that surpasses the silicon fusing point, and this steady temperature value is the 1425-1520 degree;
F, the interior silicon melt of crucible (2) (15) is applied a constant pressure with protective gas; described constant pressure range is the 20-200 millimetres of mercury; this pressure makes silicon melt (15) flow on the mold (3) from the outlet (2d) of quartzy mouth (2b); form weld pool (15a); be frozen into silicon foil (15b), silicon foil (15b) is exported through silicon foil transmitting device (6).
2, a kind of manufacture method that is used for the silicon foil of solar cell according to claim 1 is characterized in that described protective gas is the mist of inert gas or nitrogen and hydrogen.
3, the described a kind of manufacture method that is used for the silicon foil of solar cell of claim 1 is characterized in that the labial surface (2k) of described quartzy mouth (2b) is shaped as corrugated (2f), and the mould surface of Pei Heing (3a) is shaped as corresponding corrugated (3f) with it.
4, according to the described a kind of manufacture method that is used for the silicon foil of solar cell of claim 1, it is characterized in that the labial surface (2k) of described quartzy mouth (2b) is shaped as plane (2h), the mould surface of Pei Heing (3a) is shaped as plane (3h) with it.
5, according to claim 1 or 2 or 3 or 4 described a kind of manufacture methods that are used for the silicon foil of solar cell, it is characterized in that described mold is runner (3), the linear velocity of wheel surface (3a) is 0.5-10.0m/s.
6, according to claim 1 or 2 or 3 or 4 described a kind of manufacture methods that are used for the silicon foil of solar cell, it is characterized in that described mold is movable plate (13), its translational speed is 0.5-10.0m/s.
7, a kind of special equipment of manufacture method of the silicon foil that is used for solar cell, it is characterized in that in closed shell (1), being provided with crucible (2), be provided with radio-frequency induction coil (5) in the outside of crucible (2), the quartzy mouth (2b) of crucible (2) bottom is installed on the positioning clamping device (14), in quartzy mouth (2b) below mold (3) is set, mold (3) connects speed regulating device (10), the labial surface (2k) of quartzy mouth (2b) is 0.1-0.3mm to the distance of mould surface (3a), be provided with the silicon foil transmitting device (6) of crawler belt in mold (3) one sides, mold (3) links to each other with register (4), register (4) uses liquid medium to carry out temperature adjustment, liquid medium is supplied with by the isothermal liquid case, and closed shell (1) also is connected with an air-breather (9) with an air extractor (8).
8, the special equipment of the manufacture method of a kind of silicon foil that is used for solar cell according to claim 7, it is characterized in that described crucible (2) is made up of crucible body (2a) and quartzy mouth (2b), on quartzy mouth (2b), have two and go out silicon seam (2c), article two, go out the wide 0.5-2.0mm of being of seam of silicon seam (2c), article two, the longitudinal section that goes out silicon seam (2c) is combined into the V font, article two, go out silicon seam (2c) and cross on V font summit and form an outlet (2d), on quartzy mouth (2b), also be provided with the location notch (2e) that is used for clamping.
9, special equipment according to the manufacture method of claim 7 or 8 described a kind of silicon foils that are used for solar cell, the labial surface (2k) that it is characterized in that described quartzy mouth (2b) is shaped as corrugated (2f), described mold is runner (3), wheel surface (3a) is shaped as the corresponding corrugated face of cylinder (3f), described quartzy mouth (2b) is positioned at the upper left side of the runner (3) that clockwise rotates, the center line (11) of quartzy mouth (2b) is the 0-45 degree with the scope of the angle β of gravity vertical line (12), this center line (11) passes the center of runner (3), and the radius R of runner (3) is 150-400mm, width is 200-600mm.
10, according to the special equipment of the manufacture method of claim 7 or 8 described a kind of silicon foils that are used for solar cell, the labial surface (2k) that it is characterized in that described quartzy mouth (2b) is shaped as corrugated (2f), described mold is movable plate (13), its surface is corresponding corrugated shape face, the width of movable plate (13) is 200-600mm, described quartzy mouth (2b) is positioned at the top of movable plate (13), and the center line (11) of quartzy mouth (2b) is perpendicular to movable plate (13).
11, special equipment according to the manufacture method of claim 7 or 8 described a kind of silicon foils that are used for solar cell, the labial surface (2k) that it is characterized in that described quartzy mouth (2b) is shaped as plane (2h), described mold is runner (3), wheel surface (3a) is shaped as the corresponding smooth face of cylinder (3h), described quartzy mouth (2b) is positioned at the upper left side of the runner (3) that clockwise rotates, the center line (11) of quartzy mouth (2b) is the 0-45 degree with the scope of the angle β of gravity vertical line (12), this center line (11) passes the center of runner (3), and the radius R of runner (3) is 150-400mm, width is 200-600mm.
12, according to the special equipment of the manufacture method of claim 7 or 8 described a kind of silicon foils that are used for solar cell, the labial surface (2k) that it is characterized in that described quartzy mouth (2b) is shaped as plane (2h), described mold is movable plate (13), its surface is the plane, the width of movable plate (13) is 200-600mm, described quartzy mouth (2b) is positioned at the top of movable plate (13), and the center line (11) of quartzy mouth (2b) is perpendicular to movable plate (13).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB200510049692XA CN100479203C (en) | 2005-04-28 | 2005-04-28 | Method for manufacturing silicon foil for solar cell and dedicated apparatus therefor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB200510049692XA CN100479203C (en) | 2005-04-28 | 2005-04-28 | Method for manufacturing silicon foil for solar cell and dedicated apparatus therefor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1734795A CN1734795A (en) | 2006-02-15 |
| CN100479203C true CN100479203C (en) | 2009-04-15 |
Family
ID=36077076
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB200510049692XA Expired - Fee Related CN100479203C (en) | 2005-04-28 | 2005-04-28 | Method for manufacturing silicon foil for solar cell and dedicated apparatus therefor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100479203C (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080188011A1 (en) * | 2007-01-26 | 2008-08-07 | Silicon Genesis Corporation | Apparatus and method of temperature conrol during cleaving processes of thick film materials |
| CN106350866A (en) * | 2016-08-25 | 2017-01-25 | 常州大学 | Equipment and method for preparing ultrathin black silicon wafer |
| CN108311180A (en) * | 2018-03-31 | 2018-07-24 | 江苏路求科技服务有限公司 | A kind of silica crucible for capableing of quick conductive |
-
2005
- 2005-04-28 CN CNB200510049692XA patent/CN100479203C/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN1734795A (en) | 2006-02-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102277618B (en) | Polysilicon ingot, manufacturing method and growing furnace thereof, as well as bottom plate and solar cell of growing furnace | |
| KR101594474B1 (en) | Poly-crystalline silicon ingot, silicon wafer therefrom and method of fabricating poly-crystalline silicon ingot | |
| CN101495681A (en) | Device and method for production of semiconductor grade silicon | |
| CN100479203C (en) | Method for manufacturing silicon foil for solar cell and dedicated apparatus therefor | |
| KR20100024675A (en) | Manufacturing equipment for ingot and method of manufacturing the ingot | |
| CN106191997B (en) | casting device and casting method | |
| CN103668450A (en) | Ingot casting technology capable of reducing generation of fine grains in polycrystalline silicon ingot | |
| Sachs et al. | Edge stabilized ribbon (ESR) growth of silicon for low cost photovoltaics | |
| CN101477949A (en) | Silicon chip, manufacturing method and apparatus thereof | |
| KR101345747B1 (en) | The Apparatus for Semiconductor or Metal Oxide Ingot | |
| CN102206855A (en) | Czochralski crystal grower graphite crucible | |
| CN103060902B (en) | Direct forming prepares method and the silicon chip direct-forming device of band silicon | |
| CN201942777U (en) | Graphite crucible assemble for polycrystalline ingot furnace | |
| CN201634795U (en) | Czochralski crystal furnace graphite crucible | |
| CN202968137U (en) | Equipment for smelting and purifying polycrystalline silicon by utilizing solidification crucible and rotary type electron beam | |
| CN202658270U (en) | Low-carbon pseudo-single crystal ingot furnace | |
| CN114808121A (en) | Flow guide device for polycrystalline ingot furnace and use method of flow guide device | |
| CN103738965B (en) | Method for removal of oxygen from liquid silicon by electron beam melting and device thereof | |
| CN102492980A (en) | Method and device for preparing silicon cores for polycrystalline silicon deposition | |
| CN102453959A (en) | Flow guiding apparatus for crystal growth furnace | |
| CN203699923U (en) | Device for removing oxygen from liquid silicon by electron beam melting | |
| JP2004203652A (en) | Manufacturing apparatus for semiconductor particle or metal particle | |
| CN101559945B (en) | Method for preparing high purity polysilicon by utilizing silica nanoparticles and device thereof | |
| CN102453952B (en) | Gas supplying apparatus for crystal growth furnace | |
| CN204281890U (en) | A kind of tooth-shape structure is coated with crucible |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: ZHEJIANG IN-DEPTH LIGHTING CO., LTD. Free format text: FORMER OWNER: CHEN ZHEGEN Effective date: 20140530 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 310012 HANGZHOU, ZHEJIANG PROVINCE TO: 317317 TAIZHOU, ZHEJIANG PROVINCE |
|
| TR01 | Transfer of patent right |
Effective date of registration: 20140530 Address after: 317317 No. 8, Yongan Avenue, Baita Industrial Park, Xianju County, Zhejiang Patentee after: Zhejiang Shendu Lighting Co., Ltd. Address before: 310012 9-2-301 village, Wen two road, Hangzhou, Zhejiang, China Patentee before: Chen Zhegen |
|
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090415 Termination date: 20160428 |