CN106191997B - casting device and casting method - Google Patents
casting device and casting method Download PDFInfo
- Publication number
- CN106191997B CN106191997B CN201610882920.XA CN201610882920A CN106191997B CN 106191997 B CN106191997 B CN 106191997B CN 201610882920 A CN201610882920 A CN 201610882920A CN 106191997 B CN106191997 B CN 106191997B
- Authority
- CN
- China
- Prior art keywords
- gas
- crucible
- gas supply
- discharge opening
- casting device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000005266 casting Methods 0.000 title claims abstract description 68
- 238000000034 method Methods 0.000 title abstract description 15
- 239000007789 gas Substances 0.000 claims abstract description 282
- 239000011261 inert gas Substances 0.000 claims abstract description 38
- 239000000155 melt Substances 0.000 claims abstract description 16
- 239000012535 impurity Substances 0.000 abstract description 23
- 238000004519 manufacturing process Methods 0.000 abstract description 19
- 238000007711 solidification Methods 0.000 abstract description 15
- 230000008023 solidification Effects 0.000 abstract description 15
- 238000010438 heat treatment Methods 0.000 abstract description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 100
- 229910052710 silicon Inorganic materials 0.000 description 97
- 239000010703 silicon Substances 0.000 description 97
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 62
- 229910052786 argon Inorganic materials 0.000 description 31
- 239000007788 liquid Substances 0.000 description 31
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 19
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 10
- 229910052799 carbon Inorganic materials 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 9
- 230000003116 impacting effect Effects 0.000 description 9
- 239000000377 silicon dioxide Substances 0.000 description 9
- 238000003780 insertion Methods 0.000 description 8
- 230000037431 insertion Effects 0.000 description 8
- 238000009413 insulation Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 238000012546 transfer Methods 0.000 description 7
- 230000007423 decrease Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 230000002829 reductive effect Effects 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 230000008014 freezing Effects 0.000 description 4
- 238000007710 freezing Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000003628 erosive effect Effects 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 229910000861 Mg alloy Inorganic materials 0.000 description 2
- 229910000990 Ni alloy Inorganic materials 0.000 description 2
- 229910001069 Ti alloy Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000012790 confirmation Methods 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 229910052571 earthenware Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 238000004611 spectroscopical analysis Methods 0.000 description 2
- WZCLAXMADUBPSG-RIXBAXMTSA-N 1-stearoyl-2-(alpha-linolenoyl)-sn-glycero-3-phosphocholine Chemical compound CCCCCCCCCCCCCCCCCC(=O)OC[C@H](COP([O-])(=O)OCC[N+](C)(C)C)OC(=O)CCCCCCC\C=C/C\C=C/C\C=C/CC WZCLAXMADUBPSG-RIXBAXMTSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000003575 carbonaceous material Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000005499 meniscus Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22D—CASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
- B22D21/00—Casting non-ferrous metals or metallic compounds so far as their metallurgical properties are of importance for the casting procedure; Selection of compositions therefor
- B22D21/02—Casting exceedingly oxidisable non-ferrous metals, e.g. in inert atmosphere
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B28/00—Production of homogeneous polycrystalline material with defined structure
- C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
- C30B28/06—Production of homogeneous polycrystalline material with defined structure from liquids by normal freezing or freezing under temperature gradient
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22D—CASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
- B22D23/00—Casting processes not provided for in groups B22D1/00 - B22D21/00
- B22D23/06—Melting-down metal, e.g. metal particles, in the mould
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22D—CASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
- B22D27/00—Treating the metal in the mould while it is molten or ductile ; Pressure or vacuum casting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22D—CASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
- B22D27/00—Treating the metal in the mould while it is molten or ductile ; Pressure or vacuum casting
- B22D27/04—Influencing the temperature of the metal, e.g. by heating or cooling the mould
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/002—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D3/00—Charging; Discharging; Manipulation of charge
- F27D3/16—Introducing a fluid jet or current into the charge
- F27D2003/166—Introducing a fluid jet or current into the charge the fluid being a treatment gas
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D3/00—Charging; Discharging; Manipulation of charge
- F27D3/16—Introducing a fluid jet or current into the charge
- F27D2003/167—Introducing a fluid jet or current into the charge the fluid being a neutral gas
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D27/00—Stirring devices for molten material
- F27D2027/002—Gas stirring
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Silicon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Photovoltaic Devices (AREA)
Abstract
The present invention relates to a kind of casting device and casting methods, can reduce low service life region and impurity level respectively, it is difficult to which the clogging problems for generating crucible manufacture ingot casting by ideal unidirectional solidification.Casting device has receiving fusant and top has the crucible (20) of opening portion, the heater (33,43) of heating crucible and the inert gas feed unit (42) to the top supply inert gas in crucible.Inert gas feed unit has the top extended in crucible and front end is provided with the gas passage of gas discharge opening.The flowing that gas discharge opening is set as the inert gas to spue from the gas discharge opening is parallel to the melt surface in crucible.
Description
The application be on 2 26th, 2013 the applying date, entitled casting device and casting method, application No. is
201310059341.1 application divisional application.
Technical field
The present invention relates to the casting devices and casting method for manufacturing the semiconductors such as polysilicon or ingot.
Background technique
Silicon ingot is by being cut into predetermined thickness and being cut into predetermined shape to become silicon wafer.
Silicon wafer is used for example as the material of substrate used for solar batteries.Here, for solar battery, transfer efficiency etc.
Performance is affected by the characteristic of the silicon ingot of the material as substrate used for solar batteries.
In particular, the transfer efficiency of solar battery is greatly reduced if the impurity level that inside is contained is more in silicon ingot, because
This, needs to reduce impurity level to improve transfer efficiency.
Here, the metal that expands when silicon is solidification, in order to make melted silicon not remain on the inside of ingot bar, such as from crucible
Bottom upwards unidirectional solidification and be cast.In addition, by unidirectional solidification, impurity in melted silicon along with solidification phase transformation base
It is expelled to liquid phase (melted silicon) in impurity of the equilibrium segregation coefficient distribution in liquid side, crucible from solid phase (ingot bar), therefore energy
Access the less silicon ingot of impurity.
It is disclosed in following patent documents 1,2 and supplies argon gas into crucible using inert gas feed unit to inhibit silicon
The technology of oxidation.In addition, by so to the argon gas supplied in crucible, removing the silica gas etc. generated from melted silicon, according to
This can prevent silica gas from reacting with the carbon in crucible.If silica gas is reacted with carbon can generate CO gas, if
The CO gas of the generation, which is mixed into melted silicon, then causes the carbon amounts in silicon ingot to increase, and can generate adverse effect to product characteristic.Separately
Outside, the argon gas supplied in crucible also inhibits silica gas to cause oxygen amount to increase and being mixed into melted silicon.
Patent document 1: special open 2004-058075 bulletin
Patent document 2: special open 2010-534179 bulletin
There are following projects for above-mentioned existing technology.
That is, argon gas sprays to form impacting jet to vertical direction for melt surface, therefore in the eject position of argon gas
And its melt temperature decline nearby, it is solidified causing from this.As a result, not can be carried out above-mentioned desired unidirectional solidification, and
And especially on the top of silicon ingot, low service life region is increased.
In addition, as noted previously, as the part of the melt surface in crucible starts to solidify, so freezing interface is uneven
It is sliding, it not can be carried out ideal crystalline growth.
In addition, since argon gas as described above forms impacting jet, so the flowing of the argon gas in crucible is uneven, Bu Nengchong
Divide the repulsion of the impurity of silica gas in carry out crucible etc..
Moreover, melt surface promotes the erosion of crucible due to impacting jet generation fluctuation, there is the interior table from crucible
Face generate impurity be mixed into and clogging problems.
So-called slagging refers to, from the meniscus portion of the melt surface in crucible such as gas of fusant generation or impurity
Divide and chemically reacted with crucible internal walls, causes solid to be attached to crucible internal walls and will not remove.It, must when generating the slagging
Slagging part must be separated from ingot casting, the decrease in yield of ingot casting.
Summary of the invention
The present invention generates in view of the above, and it is an object of the present invention to provide one kind can reduce low service life region and miscellaneous respectively
The mixed volume of matter, it is difficult to generate the clogging problems of crucible, and then can be by making the ideal unidirectional solidification of freezing interface smoothly
To manufacture the casting device and casting method of ingot casting.
In order to solve this project and reach above-mentioned purpose, casting device according to the present invention has receiving fusant
And top has the crucible of opening portion, heats the heater of the crucible and to the lazy of the top supply inert gas in the crucible
Property gas feed unit, the casting device are characterized in that the inert gas feed unit, which has, extends to the crucible
Interior top is simultaneously provided with the gas passage of gas discharge opening in front end, and the gas discharge opening is set as spitting from the gas
The flowing for exporting the inert gas to spue is parallel to the melt surface in the crucible, that is, is parallel to horizontal plane, or opposite
It is tilted in melt surface, that is, horizontal plane in the crucible with predetermined angular.
In addition, casting method of the invention is using having receiving fusant and top has the crucible of opening portion, heating should
The casting device of the heater of crucible and the inert gas feed unit to the top supply inert gas in the crucible, it is described
Casting method is characterized in that the inert gas feed unit has the top extended in the crucible and sets in front end
It is equipped with the gas passage of gas discharge opening, from the gas discharge opening to flow the melt surface being parallel in the crucible i.e.
Horizontal plane, or relative to the melt surface in the crucible, that is, horizontal mask predetermined angular inclined mode supplies inertia
Gas.
In the casting device or casting method of the structure, gas discharge opening from the front end of gas passage, with flowing
The melt surface that is parallel in crucible or relative to predetermined angular the inclined mode of the melt surface in crucible
Supply inert gas.Therefore, inert gas will not the melt surface in crucible formed localized ejection impacting jet, but
It is substantially evenly flowed along melt surface.
As a result, it is difficult to generate the part of temperature decline in melt surface in crucible, therefore it is able to carry out solidification circle
The ideal unidirectional solidification of the bottom of the smooth slave crucible in face.Therefore, low service life region tails off, and impurity also becomes to being mixed into for ingot casting
It is few.
In addition, from gas discharge opening to flow the melt surface being parallel in crucible, or relative to molten in crucible
Melting object surface, with predetermined angular inclined mode supplies inert gas, therefore the flowing of the inert gas in crucible is smooth,
Silica gas etc. causes the removal efficiency of the mixed gas of impurity to improve.Therefore, impurity can be also reduced in this regard
It is mixed into.
In turn, since the melt surface in crucible is smooth, inhibit the erosion of crucible caused by melt surface, from crucible
The impurity that leaks out of inside to ingot casting be mixed into or the problem of slagging, is also difficult to generate.
In casting device of the invention, it is preferable that the gas passage, which has towards the top in the crucible, to be configured
Gas supply pipe, the front end side of the gas supply pipe is formed with the gas discharge opening.
In this case, by forming gas discharge opening, the flowing of inert gas in the front end side of gas supply pipe
It can be to be parallel to the melt surface in crucible, or tilted with predetermined angular relative to the melt surface in crucible
Mode formed.I.e. by only forming the simple structure of opening in the front end side of gas supply pipe, it is capable of forming and is wished
The gas passage of the inert gas flows of prestige.
In casting device of the invention, it is preferable that the gas passage, which has towards the top in the crucible, to be configured
Gas supply supervisor and multiple gases of the front-end branches from gas supply supervisor supply branch pipe, the gas supplies branch pipe
It is configured as the melt surface being parallel in the crucible, the front end of the gas supply branch pipe is provided with the gas and spues
Mouthful.
It in this case, can in crucible by being suitable for quantity, diameter and the extending direction for setting gas and supplying branch pipe
Arbitrarily it is formed in parallel with the ideal inert gas flow of melt surface.
In casting device of the invention, it is preferable that the gas passage, which has towards the top in the crucible, to be configured
Supply supervisor and multiple gases of the front-end branches being responsible for from the supply supply branch pipe, gas supply branch pipe is configured as
It is tilted relative to melt surface with the predetermined angular, the front end of the gas supply pipe is provided with the gas and spues
Mouthful.
It in this case, can in crucible by being suitable for quantity, diameter and the extending direction for setting gas and supplying branch pipe
Any flowing formed relative to predetermined angular the inclined ideal inert gas flow of melt surface.
In accordance with the invention it is possible to reduce low service life region and impurity level respectively, it is difficult to generate the clogging problems of crucible, in turn
Ingot casting can be manufactured by the ideal unidirectional solidification for keeping freezing interface smooth.
In addition, the present invention manufacture various silicon fitment materials (use in semiconductor manufacturing apparatus material, liquid crystal film forming target,
The soaking plate of heat-treatment furnace) when it is also effective, the foreign matter in ingot casting, impurity can be reduced and prevent the slagging of crucible and ingot casting from causing
Decrease in yield.
Detailed description of the invention
Fig. 1 is the summary section view explanatory diagram of the first embodiment of casting device of the invention.
Fig. 2A is the side view for the gas supply pipe for indicating that casting device shown in FIG. 1 has.
Fig. 2 B is the gas supply pipe for indicating casting device shown in FIG. 1 and having, and is cutd open along the II-II line of Fig. 2A
View.
Fig. 3 A is the side view for indicating the variation of gas supply pipe.
Fig. 3 B is the cross-sectional view along the III-III line of the variation of gas supply pipe shown in Fig. 3 A.
Fig. 4 A is the side view for indicating other variations of gas supply pipe.
Fig. 4 B is the cross-sectional view along the IV-IV line of other variations of gas supply pipe shown in Fig. 4 A.
Fig. 5 A is the side view for indicating other variations of gas supply pipe.
Fig. 5 B is the cross-sectional view along the Va-Va line of other variations of gas supply pipe shown in Fig. 5 A.
Fig. 5 C is the cross-sectional view along the Vb-Vb line of other variations of gas supply pipe shown in Fig. 5 A.
Fig. 6 A is the figure for indicating the major part of second embodiment of casting device of the invention, is the side of gas passage
View.
Fig. 6 B is the figure for indicating the major part of second embodiment of casting device of the invention, is bowing for gas passage
View.
Fig. 7 A is the side view for indicating the variation of gas passage.
Fig. 7 B is the top view for indicating the variation of gas passage.
Fig. 8 A is the side view for indicating other variations of gas passage.
Fig. 8 B is the top view for indicating other variations of gas passage.
Fig. 9 is the side view for indicating the gas passage of the major part of third embodiment of casting device of the invention.
Figure 10 is the side view for indicating the variation of gas passage.
Figure 11 is the side view for indicating other variations of gas passage.
Figure 12 is the conversion power for indicating the solar battery using the silicon ingot production manufactured by casting device of the invention
Figure.
Figure 13 is the figure for indicating the conversion power using the solar battery of the silicon ingot production manufactured by existing casting device.
Figure 14 is the figure for indicating the service life of the silicon ingot manufactured by casting device of the invention.
Figure 15 is the figure for indicating the service life of the silicon ingot manufactured by existing casting device.
Symbol description
3 melted silicons
10 casting devices
20 crucibles
22 sidewall portions
33 lower heaters
43 upper portion heaters
42 gas supply pipes (inert gas feed unit, gas passage)
42A, 42B, 42C, 42D gas discharge opening
50 covers
60,70 gas passage
61,65,67,71,73,81 gases supply supervisor
62,66,68,72,74,82 gases supply branch pipe
62A, 66A, 68A, 72A, 74A, 82A gas discharge opening
Specific embodiment
The casting device of embodiments of the present invention, manufacturing method are illustrated with reference to the accompanying drawings.
In the explanation of the following embodiments and the accompanying drawings, fusant uses melted silicon, but the type about fusant, is not limited only to
Melted silicon.As fusant, can be used using metal and semiconductor as the fusant of raw material.For example, can be with as raw metal
Use copper alloy, aluminium alloy, titanium alloy, magnesium alloy or nickel alloy etc..As raw semiconductor can be used sapphire, gallium arsenide,
Or nitridation is sowed.
< first embodiment >
FIG. 1 to FIG. 5 C indicates the first embodiment of casting device according to the present invention.Fig. 1 is first embodiment
Summary section view explanatory diagram.The casting device 10 of present embodiment, which has, to be remained the chamber 11 of airtight conditions for inside, stores silicon
The crucible 20 of melt 3, the chill plate 31 for loading the crucible 20, positioned at the lower section of the chill plate 31 lower heater 33, be located at
The upper portion heater 43 of the top of crucible 20, be positioned in crucible 20 upper end cover 50 and to crucible 20 and cover 50 it
Between space import inert gas (such as argon gas) gas supply pipe 42.
In addition, being equipped with adiabatic wall 12 in the peripheral side of crucible 20, insulation top is equipped in the top of upper portion heater 43
Plate 13 is equipped with insulation bottom plate 14 in the lower section of lower heater 33.That is, the casting device 10 of present embodiment is to surround crucible
20, the mode of upper portion heater 43, lower heater 33 etc. is equipped with heat-insulating material (adiabatic wall 12, insulation top plate 13, insulation bottom
Plate 14).In addition, being provided with gas vent 15 in insulation bottom plate 14.
Upper portion heater 43 and lower heater 33 are connect with electrode bar 44,34 respectively.
The electrode bar 44 of upper portion heater 43 is connected to through insulation top plate 13 and extends to the adjacent upper part of crucible 20.Even
The electrode bar 34 of lower heater 33 is connected to through insulation bottom plate 14 and is extended near the bottom of crucible 20.
The chill plate 31 of mounting crucible 20 is arranged on the upper end for being inserted through the support portion 32 of lower heater 33.This is chill
Plate 31 is hollow structure, supplies argon gas to inside via the feed path (not shown) for the inside that support portion 32 is arranged in.
The horizontal cross-sectional shape of crucible 20 is rectangular (rectangle), and in the present embodiment, horizontal cross-sectional shape is square.
The crucible 20 is made of quartz, is had the bottom surface 21 contacted with chill plate 31 and is erect the side wall of setting upwards from the bottom surface 21
Portion 22.The horizontal profile of the sidewall portion 22 is in rectangular ring.
Cover 50 has the mounting portion 51 of the upper end for the sidewall portion 22 for being positioned in crucible 20, from the sidewall portion 22 of crucible 20
Eaves portion 52 that outer edge protrudes outward, the insertion hole 53 and in a thickness direction for gas supply pipe 42 above-mentioned insertion
Run through and be discharged the opening portion (not shown) of the gas in crucible 20.
In addition, cover 50 itself and crucible 20 can also be made instead of the opening portion for forming gas discharge in cover 50
Sidewall portion 22 separate gap configuration, utilize the gap discharge crucible 20 in gas.
The cover 50 is preferably made of carbon-based material, is made of in present embodiment silicon carbide.
Above-mentioned gas supply pipe 42 is, for example, the component of molybdenum system or carbon, is connected with not in base end side (upper end side in Fig. 1)
The gas supply part of diagram.Gas supply pipe 42 extends along vertical direction to be configured, and is configured as the top plate through chamber 11
Portion passes through the above-mentioned insertion hole 53 of cover 50, the silicon that front end extends to the top in crucible, is held in crucible 20 in turn
The liquid level of melt 3 is nearby (for example, range away from 10~70mm of liquid level).In addition, the indifferent gas imported from above-mentioned gas supply unit
Body is supplied from the front end of gas supply pipe 42 to the upper space of melted silicon 3.
That is, the gas supply part for being connected to the base end side of gas supply pipe 42 and gas supply pipe 42 is constituted in crucible 20
Top supply inert gas inert gas feed unit, gas supply pipe 42 composition extended in crucible from gas supply part
Top gas passage.
Fig. 2A and Fig. 2 B indicates the detailed construction of gas supply pipe 42, and Fig. 2A is side view, and Fig. 2 B is the II-II along Fig. 2A
The cross-sectional view of line.As shown in these figures, multiple gas discharge opening 42A are formed in the front end side of gas supply pipe 42.Gas
Body discharge opening 42A is formed as extending to the direction of the axis L-orthogonal with gas supply pipe 42.That is, gas discharge opening 42A is by opening
Mouth runs through and shape on the pipe side wall edge of the front end of gas supply pipe 42 and the direction of the axis L-orthogonal of the gas supply pipe 42
At.
In addition, gas discharge opening 42A is as shown in Figure 2 A, be formed it is rounded in terms of the front of opening, in addition, in circumference
Direction separates equal intervals and forms 6 altogether.In addition, the front end of gas supply pipe 42 is blocked by lid (not shown).
Fig. 3 A~3B, Fig. 4 A~4B, Fig. 5 A~5C respectively indicate the variation of gas supply pipe 42.It is formed in gas supply
The gas discharge opening of the front end of pipe 42 can also be Fig. 3 A~3B, Fig. 4 A~4B, Fig. 5 A in addition to beyond the region of objective existence shown in Fig. 2A and Fig. 2 B
Gas discharge opening shown in~5C.
Structure shown in Fig. 3 A and Fig. 3 B, Fig. 4 A and Fig. 4 B institute square from gas discharge opening 42B in terms of the front of opening
The structure shown, from gas discharge opening 42C in terms of the front of opening in laterally long rectangle.In addition, structure shown in Fig. 5 A~5C
Gas discharge opening 42D be formed three-level up and down, and be formed with multiple gas discharge opening 42D at different levels.It is formed at different levels
The concrete shape of gas discharge opening 42D can be round perhaps rectangular or laterally long rectangle in terms of the front of opening,
Although can also be ellipse in terms of the front of opening without further illustrating.
Then, the manufacturing method for the silicon ingot for using above-mentioned casting device 10 is illustrated.
Firstly, to silicon raw material is packed into crucible 20.Here, using crushing 11N (purity as silicon raw material
99.999999999) block for being referred to as " block " that high purity silicon obtains.The partial size of the block-like silicon raw material is, for example,
30mm to 100mm.
Then, by being powered to heat the silicon being packed into crucible 20 original to upper portion heater 43 and lower heater 33
Material, to generate melted silicon 3.At this point, the melt surface of the melted silicon 3 in crucible 20 is set at the sidewall portion lower than crucible 20
The position of 22 upper end.
Then, the melted silicon 3 in crucible 20 is solidified.For this purpose, firstly, stop energization to lower heater 33, via
Feed path supplies argon gas to the inside of chill plate 31.Accordingly, the bottom of cooling crucible 20.At this point, continuing upper portion heater 43
Energization, thus generate temperature gradient upwards from bottom surface 21 in crucible 20, by the temperature gradient, melted silicon 3 is upwards
Unidirectional solidification.In turn, by reducing the energization to upper portion heater 43 slowly, the melted silicon 3 in crucible 20 coagulates upwards
Consolidate and generating silicon ingot.
In addition, in the solidification process, via gas supply pipe 42 and insertion hole 53, between crucible 20 and cover 50
Argon gas is for example supplied in space as inert gas.Gas supply pipe 42 from the insertion hole 53 of the planar central of insertion cover 50
Front end such as gas discharge opening 42A supply argon gas, due to the axis L-orthogonal with gas supply pipe 42 direction extend
Ground is formed with multiple gas discharge opening 42A, therefore, is parallel to the liquid level of melted silicon 3, and radially spread while pass through earthenware
On melted silicon 3 in crucible 20, from the gap between the opening portion or cover 50 and sidewall portion 22 of cover 50 to outside crucible 20
Portion's discharge, and further pass through from the outside of crucible 20 gas vent 15 that is arranged on insulation bottom plate 14 to the outboard row of chamber 11
Gas.
In this way, making silicon ingot using unidirectional solidification legal system.The silicon ingot be, for example, be used as substrate used for solar batteries silicon wafer or
The material of other silicon parts.
According to the casting device 10 of the silicon ingot of the present embodiment of such as above structure, argon gas is parallel to crucible 20 with its flowing
The mode of the liquid level of interior melted silicon 3 is supplied from gas discharge opening 42A~42D of the front end side of gas supply pipe 42.Cause
This, the liquid level of melted silicon 3 of the argon gas in crucible not will form the impacting jet of localized ejection, but along the liquid level of melted silicon
It flows in parallel and substantially evenly.
This is as a result, it is possible to be avoided the part of the liquid level of the melted silicon 3 in crucible 20 as described in the prior art from causing
The case where temperature declines and solidifies causing from this.Therefore, be able to carry out the bottom of the smooth slave crucible in freezing interface to
The ideal unidirectional solidification of top.Therefore, low service life region is reduced, and being mixed into for impurity is also reduced.
In addition, supplied in a manner of being parallel to the liquid level of melted silicon 3 when argon gas is supplied from gas discharge opening in crucible,
Therefore, the flowing of argon gas is smoothened, and silica gas etc. causes the removal efficiency of the mixed gas of impurity to improve.Therefore, energy
Prevent silica gas from reacting with the carbon in crucible and generating CO gas, enough so as to prevent impurity (carbon) mixed with CO gas
Enter in melted silicon 3 and is mixed into.
Moreover, as described above, argon gas will not the liquid level of the melted silicon 3 in crucible formed localized ejection impacting jet,
But flowed in parallel and substantially evenly along the liquid level of melted silicon, so the liquid level of the melted silicon 3 in crucible is smooth, therefore,
The erosion for inhibiting crucible caused by melt surface, the impurity leaked out from the inside of crucible is mixed into silicon ingot and clogging problems are also difficult
To generate.
In this way, can manufacture according to the present embodiment, impurity level is few, the stable high-quality silicon ingot of the direction of growth of crystallization.
In addition, gas discharge opening 42A~42D is formed to the axis L with gas supply pipe 42 in above embodiment
Orthogonal direction extends, and but not limited to this, may be formed as having regulation angle relative to the axis L of gas supply pipe 42
Tilt to degree (such as 90 °~45 °).
< second embodiment >
Fig. 6 A~Fig. 8 B indicates the second embodiment of casting device according to the present invention.Fig. 6 A and Fig. 6 B are to indicate this
The figure of the major part of the second embodiment of the casting device of invention.Fig. 6 A is the side view of gas passage, and Fig. 6 B is gas
The top view in channel.
The difference of second embodiment and above-mentioned first embodiment only has gas passage, and other structures are real with first
It applies that mode is identical, saves the explanation of same section herein.
While base end side is connected to gas supply part by the gas passage 60 of second embodiment, have front end side court
Multiple gases supply of the gas supply supervisor 61 and the front-end branches from gas supply pipe 61 that are configured to the upper space of crucible
Branch pipe 62.
Gas supply pipe 61 extends along vertical direction to be configured, and is configured as the top plate portion of the chamber 11 shown in Fig. 1 in turn
By the insertion hole of cover 50, the top that front end extends in crucible 20, the melted silicon 3 being held in crucible 20 liquid level
Near.
It is orthogonal with gas supply supervisor 61 that gas supplies branch pipe 62, and is separated by 90 ° of connections four altogether to circumferencial direction, each
The front end of branch pipe is open as gas discharge opening 62A.In addition, from gas discharge opening 62A along the axis of gas supply branch pipe 62
The inert gases such as argon gas are supplied in parallel with the liquid level of melted silicon 3.
The section shape of gas supply supervisor 61 and gas supply branch pipe 62 is circle, and but not limited to this, can be with
For section ellipticity or section square shape.In addition, gas supply branch pipe 62 has used diameter to be less than gas supply supervisor 61
Branch pipe, but not limited to this, can also use diameter be identical to gas supply supervisor 61 branch pipe.
Fig. 7 A~Fig. 7 B, Fig. 8 A~Fig. 8 B respectively indicate the variation of gas passage 60.Gas passage 60 in addition to Fig. 6 A~
It can also be the structure shown in Fig. 7 A~Fig. 7 B, Fig. 8 A~Fig. 8 B outside structure shown in Fig. 6 B.
Structure shown in Fig. 7 A~Fig. 7 B connects multiple gases in the front end of gas supply supervisor 65 and supplies branch pipe 66, this
A little gas supply branch pipes 66 are orthogonal with gas supply supervisor and are separated by 45 ° of connections eight altogether in circumferencial direction, and gas supplies branch pipe
66 front opening is gas discharge opening 66A.
In addition, being supplied in parallel along the axis of gas supply branch pipe 66 with the liquid level of melted silicon from gas discharge opening 66A
Inert gas.
Structure shown in Fig. 8 A~Fig. 8 B connects hollow disk-shaped chamber 68 in the front end of gas supply supervisor 67.Chamber
It is separated by circumferencial direction with opening is formed at equal intervals on the side wall of room 68, which is gas discharge opening 68A.
In addition, it is orthogonal with gas supply supervisor 67 from gas discharge opening 68A, i.e., it is supplied in parallel with the liquid level of melted silicon lazy
Property gas.
In the second embodiment, inert gas such as argon gas is parallel with the liquid level of the melted silicon in crucible with its flowing
Mode is supplied from gas discharge opening 62A, 66A, the 68A being arranged in gas supply branch pipe 62,66 or chamber 68.Therefore, argon
Gas will not form the impacting jet of localized ejection in the liquid level of the melted silicon 3 in crucible, but it is parallel along the liquid level of melted silicon and
It substantially evenly flows, to obtain the effect being the same as the above first embodiment.
< third embodiment >
Fig. 9, Figure 10 indicate the third embodiment of casting device according to the present invention.Fig. 9 is to indicate casting of the invention
Make the perspective view of the major part of the third embodiment of device.
The embodiment is also identical as second embodiment, the structure other than the gas passage as its characteristic
It is the same as the above first embodiment, therefore saves its explanation.
Base end side is connected to gas supply part by the gas passage 70 of third embodiment, and is had front end towards earthenware
The gas supply supervisor 71 of the upper space configuration of crucible and multiple gases of the front-end branches from gas supply supervisor 71 supply branch
Pipe 72.
Gas supply supervisor 71 extends along vertical direction to be configured, and the top plate through chamber 11 shown in FIG. 1 is configured as
Portion passes through the insertion hole 53 of cover 50 in turn, and top that front end extends in crucible 20, the silicon being held in crucible 20 melt
Near the liquid level of liquid 3.
Gas supplies branch pipe 72 in the front end of gas supply supervisor 71, relative to the axis L with gas supply supervisor 71
Orthogonal face, i.e. horizontal plane formation predetermined angular θ a (such as 0 ° 45 ° of < of < θ a, preferably 0 ° 35 ° of < of < θ a, more preferably 0 °
25 ° of < θ a <) geosyncline inclined downward, and be separated by 90 ° to circumferencial direction and connect four altogether.It opens the front end of gas supply branch pipe 72
Mouth is gas discharge opening 72A.In addition, supplying on the axis of branch pipe 72 from gas discharge opening 72A along gas relative to melted silicon 3
Liquid level have predetermined angular geosyncline inclined downward supply inert gas.
In addition, predetermined angular θ a is according to the distance of the liquid level from gas discharge opening 72A to melted silicon and the sky on crucible top
Between capacity etc. suitably set.
The section shape of gas supply supervisor 71 and gas supply branch pipe 72 is circle, and but not limited to this, can be with
For section ellipticity or section square shape.In addition, gas supply branch pipe 72 has used diameter to be less than gas supply supervisor 71
Branch pipe, but not limited to this, can also use diameter be identical to gas supply supervisor 71 branch pipe.
The variation of Figure 10 expression gas passage 70.It can also be Figure 10 institute other than the structure shown in Fig. 9 of gas passage 70
The structure shown.
Structure shown in Figure 10, gas supply branch pipe 74 in the front end of gas supply supervisor 73, supply relative to the gas
To the face of the axis L-orthogonal of supervisor 73, i.e., horizontal plane H-shaped at predetermined angle theta b (such as 0 ° 45 ° of < of < θ a, preferably 0 ° of < θ a
35 ° of <, more preferably 0 ° of 25 ° of < θ a <) geosyncline inclined upward, and be separated by 90 ° to circumferencial direction and connect four altogether.Gas supplies
Front opening to branch pipe 74 is gas discharge opening 74A.In addition, from gas discharge opening 74A along the axis of gas supply branch pipe 74
Relative to the liquid level of melted silicon there is predetermined angular geosyncline inclined upward to supply inert gas on line.
In the structure of the third embodiment, argon gas from be arranged in gas supply branch pipe 72,74 gas discharge opening 72A,
74A by its mobile phase for the melted silicon in crucible liquid level have predetermined angular in a manner of oliquely downward or oblique upper tilt
Supply.Therefore, argon gas will not form the impacting jet of localized ejection in the liquid level of the melted silicon 3 in crucible, but melt along silicon
The liquid level of liquid is substantially parallel and equably flows, to obtain the effect being the same as the above first embodiment.
The 4th embodiment > of <
Figure 11 is the side view for indicating the 4th embodiment of casting device according to the present invention.
The embodiment is also identical as second embodiment, the structure other than the gas passage as its characteristic
It is the same as the above first embodiment, therefore saves its explanation.
Structure shown in Figure 11 is almost identical structure with the gas passage 60 of the second embodiment shown in Fig. 6 A~6B.
That is, the gas passage 80, is connected to gas supply part for base end side, and have front end is empty towards the top of crucible
Between configure gas supply supervisor 81 and from gas supply supervisor 81 front-end branches multiple gases supply branch pipe 82.
It is orthogonal with gas supply supervisor 81 that gas supplies branch pipe 82, and is separated by 90 ° of connections four altogether to circumferencial direction, each
The front opening of branch pipe is gas discharge opening 82A.
The difference of 4th embodiment and second embodiment is in addition to being arranged in the front end of gas supply branch pipe 82
Have except gas discharge opening 82A, is additionally provided with gas discharge opening 81A in the lower end center of gas supply supervisor 81.
The amount of inert gas supplied from the gas discharge opening 81 in the lower end center that gas supply supervisor 81 is arranged in is for example
Argon gas amount is minute quantity, such as the total amount such as 1/5~1/10 relative to the argon gas supplied from other gas discharge opening 82A is left
It is right.
That is, mainly being supplied by supplying the gas discharge opening 82A of the front end of branch pipe 82 from gas in the 4th embodiment
Argon gas, the unwanted gases such as silica gas for generating in crucible are removed, auxiliarily by supplying from gas discharge opening 81A
The argon gas given removes the unwanted gas being located near the melted silicon of the underface of gas supply supervisor 81.
In the structure of 4th embodiment, argon gas is mainly from the gas discharge opening 82A for being set to gas supply branch pipe 82
It is supplied in a manner of the melted silicon liquid level that its flowing is parallel in crucible, therefore, argon gas will not be in the liquid of the melted silicon 3 in crucible
Face forms the impacting jet of localized ejection, but substantially parallel along the liquid level of melted silicon and equably flow, with obtain with it is upper
State the identical effect of embodiment.
The casting device of embodiments of the present invention, casting method are illustrated above, but not limited to this, energy
It is enough suitable for being designed change.
For example, in the above-described embodiment, the gas passage to supply inert gas carries out in case where being one
Illustrate, but not limited to this, and gas passage can also be a plurality of.
Furthermore it is also possible to which proper combination is distinguished and whole structure in gas with various channel shown in first to fourth embodiment
At a gas passage.
It can also be other inert gases in addition, being not limited to argon gas certainly to the inert gas supplied in crucible.
In addition, casting device and casting method of the invention can also be applied to the case where material other than cast silicon.Example
Such as, copper alloy, aluminium alloy, titanium alloy, magnesium alloy or nickel alloy etc. can be used as raw metal.As raw semiconductor
Sapphire, gallium arsenide or nitridation can be used to sow.
[embodiment 1]
The experiment of confirmation effect of the invention is carried out.Using having gas shown in Fig. 2A and Fig. 2 B of first embodiment
The casting device in channel, manufactured 680mm it is rectangular × the tetragonal column silicon ingot of height 250mm.In addition, setting rate is 5mm/
h.In addition, being 501/min by the supply amount of the Ar gas of gas supply pipe.
In addition, in addition to using having of illustrating in background technique relative to melt surface to vertical direction injection argon gas
Other than inert gas feed unit, silicon ingot has been manufactured under the conditions of same as described above.As comparative example 1.
In addition, being sliced manufacture silicon wafer in the horizontal direction by the silicon ingot that will be obtained, solar energy is constituted according to below step
Battery.
Firstly, addition B (boron) is used as receptor when manufacture silicon ingot, the P-type silicon that impedance value is 1~2 Ω cm or so has been manufactured
Piece.P (phosphorus) dopant is used in the P-type wafer, implements heat treatment in 850 DEG C × 30 minutes, N is formd in P-type silicon layer
Type silicon layer.
Then, it in order to reduce reflectivity, is etched on the surface of silicon wafer.KOH aqueous solution has been used when etching.
The two sides of silicon wafer after the etching is coated with by silk-screen printing and calcines Ag paste (dupont corporation
Solamet).Coating thickness is 30 μm, is calcined under conditions of 750 DEG C × 1 minute.At this point, being applied in the inside of silicon wafer
Cloth is simultaneously spread A1 paste (dupont corporation Solamet), has been formed about P+ layers (A1-BSF) in electrode.
Here, the coating thickness of A1 paste is 20 μm.
In addition, the surface of silicon wafer forms SiNx using as antireflection film using plasma chemical vapor phase process (CVD).It uses
Device (SLPC) is used in the solar battery antireflection film manufacture of Shimadzu Scisakusho Ltd's manufacture, with a thickness of 100nm.
Using the solar battery of the test, transfer efficiency is evaluated by solar simulator.
In the present embodiment 1, the XES-155S1 manufactured using K.K. Minaga Denki Seisakusho, in 1000W/m2、
AM1.5, implement under conditions of 25 DEG C.
Evaluation result is indicated with Figure 12, Figure 13.
Figure 12 is embodiment 1 according to the present invention as a result, Figure 13 is the result of comparative example 1.
The result of the present embodiment 1 no matter 0mm~200mm height and position, all achieve and to consolidate beyond roughly 16%
Fixed transfer efficiency, average transfer efficiency are 16.5%.
On the other hand, comparative example 1 as a result, on the height and position of 0mm~200mm compared with the result of embodiment 1, turn
Low efficiency is changed, and deviation is also big.In addition, average transfer efficiency is 15.9%.
In addition, about above-described embodiment 1, comparative example 1 is surveyed along the service life that the section of the central portion of ingot casting has carried out carrier
It is fixed.Measurement is carried out using the biometrics device WT-2000 that Se meter Lai C Compaq manufactures.
Measurement result is indicated with Figure 14, Figure 15.
Figure 14 is embodiment 1 according to the present invention as a result, Figure 15 is the result of comparative example 1.
In the result of the present embodiment 1, service life short region S (such as 2 regions below μ s) 5mms most from upper end or so.
In contrast, in the result of comparative example 1, service life short region S is determined in part of the central portion from upper end to 25mm or so.On
The injection that the service life at end short region S is presumably due to argon gas causes melt temperature to decline, and generates solidification is from this.
It confirmed that low service life region and impurity level can be reduced simultaneously according to the present invention by the above item, and can manufacture
The stable silicon ingot of the growth direction of crystallization.
In addition, having carried out other experiments of confirmation effect of the invention.
[embodiment 2]
Using the manufacturing device for having gas passage shown in Fig. 4 A and Fig. 4 B of first embodiment manufactured the angle 680mm ×
The tetragonal column silicon ingot of height 250mm.In addition, setting rate is 5mm/h.In addition, pass through the Ar gas of gas supply pipe
Supply amount is 501/min.
[embodiment 3]
Using the manufacturing device of gas passage shown in the Figure 11 for having the 4th embodiment manufactured 680mm it is rectangular × height
The tetragonal column silicon ingot of 250mm.In addition, setting rate is 5mm/h.In addition, the supply of the Ar gas by gas supply pipe
Amount is 501/min.
The silicon ingot obtained in Examples 1 to 3 and comparative example 1 is sliced in the horizontal direction and has manufactured silicon wafer, passes through Fourier
Transform infrared line optical spectroscopy (FI-IR) determines oxygen concentration and concentration of carbon in silicon wafer.(Japan Spectroscopy Corporation's manufacture
FT/IR-4000, JEIDA-61-2000)
Measurement result table 1 indicates.
[table 1]
| Embodiment 1 | Embodiment 2 | Embodiment 3 | Comparative example 1 | |
| Oxygen concentration × 10 on ingot casting top18atoms/cc | 0.07 | < 0.01 | 0.08 | 0.27 |
| Concentration of carbon × 10 on ingot casting top18atoms/cc | 0.06 | 0.12 | 0.11 | 0.16 |
Show that oxygen concentration is 0.08 hereinafter, concentration of carbon is 0.12 or less in the silicon wafer of Examples 1 to 3 from above-mentioned table 1.
On the other hand, oxygen concentration and the concentration of carbon impurity all compared with the silicon wafer of the present embodiment 1~3 in the silicon wafer of comparative example 1
Concentration is high.
By the above item it is found that in accordance with the invention it is possible to manufacture low service life region and impurity level while reducing, and crystallize
The stable silicon ingot of the direction of growth therefore can be adapted to for such as towards any purpose solar battery or silicon parts.
Industrial availability
It can prevent the decline of the yield rate of the silicon ingot towards solar battery or silicon parts etc..
Claims (5)
1. a kind of casting device, have receiving fusant and top have the crucible of opening portion, heat the crucible heater and
To the inert gas feed unit of the top supply inert gas in the crucible, the casting device is characterized in that,
The inert gas feed unit has the top extended in the crucible and front end is provided with gas discharge opening
Gas passage,
The gas passage have towards the top in the crucible along vertical direction extend configuration gas supply supervisor and
Branch pipe is supplied from multiple gases of the front-end branches of gas supply supervisor,
The front end of the gas supply branch pipe is provided with the gas discharge opening,
The flowing that the gas discharge opening is set as the inert gas to spue from the gas discharge opening is parallel in the crucible
Melt surface, or face relative to the axis vertical take-off with gas supply supervisor has greater than 0 ° and less than 45 °
Tilt to angle.
2. casting device according to claim 1, which is characterized in that
The gas supply branch pipe is configured as the melt surface being parallel in the crucible.
3. casting device according to claim 1, which is characterized in that
The gas supply branch pipe, which is configured as being formed relative to the face of the axis vertical take-off with gas supply supervisor, is greater than 0 °
And the angle geosyncline inclined downward less than 45 °.
4. casting device according to claim 1, which is characterized in that
The gas supply branch pipe, which is configured as being formed relative to the face of the axis vertical take-off with gas supply supervisor, is greater than 0 °
And the angle geosyncline inclined upward less than 45 °.
5. casting device according to claim 2, which is characterized in that
The lower end center of gas supply supervisor is provided with gas discharge opening.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012041738 | 2012-02-28 | ||
| JP2012-041738 | 2012-02-28 | ||
| CN201310059341.1A CN103498195B (en) | 2012-02-28 | 2013-02-26 | Casting device and casting method |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310059341.1A Division CN103498195B (en) | 2012-02-28 | 2013-02-26 | Casting device and casting method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106191997A CN106191997A (en) | 2016-12-07 |
| CN106191997B true CN106191997B (en) | 2019-01-22 |
Family
ID=48951017
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610882920.XA Active CN106191997B (en) | 2012-02-28 | 2013-02-26 | casting device and casting method |
| CN201310059341.1A Active CN103498195B (en) | 2012-02-28 | 2013-02-26 | Casting device and casting method |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310059341.1A Active CN103498195B (en) | 2012-02-28 | 2013-02-26 | Casting device and casting method |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP6064596B2 (en) |
| CN (2) | CN106191997B (en) |
| DE (1) | DE102013203113B4 (en) |
| TW (1) | TWI600810B (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR3010092B1 (en) | 2013-09-02 | 2017-05-26 | Commissariat Energie Atomique | METHOD AND DEVICE FOR TREATING THE FREE SURFACE OF A MATERIAL |
| CN105112995B (en) * | 2015-08-19 | 2017-11-28 | 常州天合光能有限公司 | Polycrystalline silicon ingot or purifying furnace it is compound every carbon coating and preparation method, graphite protective plate, polycrystalline silicon ingot or purifying furnace |
| CN105112997B (en) * | 2015-09-23 | 2018-01-19 | 晶科能源有限公司 | A kind of ingot furnace airflow guiding device |
| CN108057864B (en) * | 2017-12-12 | 2019-07-16 | 李进敏 | casting device and casting method thereof |
| CN109595940A (en) * | 2018-12-29 | 2019-04-09 | 江苏三阳环保工程有限公司 | A kind of red lead machine bidirectional radiation heating device |
| TWI811639B (en) | 2021-02-25 | 2023-08-11 | 環球晶圓股份有限公司 | Crystal growth purification equipment and method for purifying thermal field fittings |
| CN115319036B (en) * | 2022-08-17 | 2023-10-24 | 巢湖云海镁业有限公司 | Hot top casting device for magnesium and magnesium alloy |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1384538A1 (en) * | 2002-07-25 | 2004-01-28 | Mitsubishi Materials Corporation | Casting apparatus for manufacturing polycrystalline silicon ingots and method therefor |
| CN201485281U (en) * | 2009-07-16 | 2010-05-26 | 济宁凯伦光伏材料有限公司 | Furnace-inside argon spraying device of polysilicon ingot furnace |
| WO2012011523A1 (en) * | 2010-07-22 | 2012-01-26 | 三菱マテリアル株式会社 | Polycrystalline silicon ingot manufacturing apparatus, polycrystalline silicon ingot manufacturing method, and polycrystalline silicon ingot |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3885452B2 (en) * | 1999-04-30 | 2007-02-21 | 三菱マテリアル株式会社 | Method for producing crystalline silicon |
| JP4953522B2 (en) * | 2001-06-21 | 2012-06-13 | シャープ株式会社 | Molten silicon purification method and molten silicon purification apparatus |
| JP3885558B2 (en) * | 2001-11-06 | 2007-02-21 | 三菱マテリアル株式会社 | Crystalline silicon production equipment |
| JP2005271078A (en) * | 2004-02-25 | 2005-10-06 | Kyocera Corp | Inert gas treatment structure, silicon casting apparatus having structure thereof, silicon casting method, polycrystalline silicon ingot using method thereof, and polycrystalline silicon substrate |
| JP2006273628A (en) * | 2005-03-28 | 2006-10-12 | Kyocera Corp | Method for manufacturing polycrystalline silicon ingot |
| JP2006272400A (en) * | 2005-03-29 | 2006-10-12 | Kyocera Corp | Casting device and semiconductor ingot |
| JP4710429B2 (en) * | 2005-06-20 | 2011-06-29 | 株式会社Ｓｕｍｃｏ | Semiconductor single crystal manufacturing equipment |
| JP5069859B2 (en) * | 2006-01-18 | 2012-11-07 | 新日鉄マテリアルズ株式会社 | Silicon purification apparatus and purification method |
| JP5042600B2 (en) * | 2006-11-24 | 2012-10-03 | 京セラ株式会社 | Method for producing silicon ingot |
| JP2011528308A (en) | 2007-07-20 | 2011-11-17 | ビーピー・コーポレーション・ノース・アメリカ・インコーポレーテッド | Method and apparatus for producing cast silicon from seed crystals |
| TWI397617B (en) * | 2010-02-12 | 2013-06-01 | Masahiro Hoshino | Metal silicon purification device |
| TWI403461B (en) * | 2010-07-21 | 2013-08-01 | Masahiro Hoshino | Method and apparatus for improving yield and yield of metallurgical silicon |
| WO2012121972A2 (en) * | 2011-03-04 | 2012-09-13 | Evergreen Solar, Inc. | Sheet wafer growth stabilization |
-
2012
- 2012-12-28 JP JP2012286440A patent/JP6064596B2/en active Active
-
2013
- 2013-02-25 TW TW102106586A patent/TWI600810B/en active
- 2013-02-26 DE DE102013203113.0A patent/DE102013203113B4/en active Active
- 2013-02-26 CN CN201610882920.XA patent/CN106191997B/en active Active
- 2013-02-26 CN CN201310059341.1A patent/CN103498195B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1384538A1 (en) * | 2002-07-25 | 2004-01-28 | Mitsubishi Materials Corporation | Casting apparatus for manufacturing polycrystalline silicon ingots and method therefor |
| CN201485281U (en) * | 2009-07-16 | 2010-05-26 | 济宁凯伦光伏材料有限公司 | Furnace-inside argon spraying device of polysilicon ingot furnace |
| WO2012011523A1 (en) * | 2010-07-22 | 2012-01-26 | 三菱マテリアル株式会社 | Polycrystalline silicon ingot manufacturing apparatus, polycrystalline silicon ingot manufacturing method, and polycrystalline silicon ingot |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201400649A (en) | 2014-01-01 |
| JP2013209280A (en) | 2013-10-10 |
| TWI600810B (en) | 2017-10-01 |
| JP6064596B2 (en) | 2017-01-25 |
| DE102013203113A1 (en) | 2013-08-29 |
| CN103498195B (en) | 2016-11-23 |
| CN106191997A (en) | 2016-12-07 |
| DE102013203113B4 (en) | 2024-01-11 |
| CN103498195A (en) | 2014-01-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106191997B (en) | casting device and casting method | |
| CA3031880C (en) | Methods and apparati for making thin semiconductor bodies from molten material | |
| CN102277618B (en) | Polysilicon ingot, manufacturing method and growing furnace thereof, as well as bottom plate and solar cell of growing furnace | |
| CN102268724A (en) | Polycrystalline silicon ingot and manufacturing method thereof as well as solar cell | |
| CN202164381U (en) | Reusable crucible for ingoting | |
| TWI527940B (en) | Apparatus for manufacturing silicon ingot, method for manufacturing silicon ingot, silicon ingot, silicon wafer, solar cell, and silicon part | |
| WO2010132644A1 (en) | Methods of making an article of semiconducting material on a mold comprising particles of a semiconducting material | |
| JP2010064936A (en) | Method for producing semiconductor crystal | |
| CN102689001B (en) | Silicon ingot and manufacturing installation thereof and method, Silicon Wafer, solar cell and silicon part | |
| CN106167916A (en) | The manufacture method of SiC single crystal | |
| JP4845480B2 (en) | Semiconductor ingot manufacturing apparatus and semiconductor ingot manufacturing method | |
| JP5196438B2 (en) | Raw material melt supply apparatus, polycrystal or single crystal production apparatus and production method | |
| KR101964999B1 (en) | Casting apparatus and casting method | |
| JP2006275344A (en) | Method of manufacturing semiconductor closure body | |
| JP2015006990A (en) | Silicon ingot, silicon wafer, solar cell, and silicon part |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |