JP5196438B2 - Raw material melt supply apparatus, polycrystal or single crystal production apparatus and production method - Google Patents

Description

  The present invention relates to a mechanism for supplying a raw material melt into a heat resistant container (hereinafter referred to as a raw material) in a method for producing a single crystal or a polycrystal from a raw material melt such as a semiconductor stored in the heat resistant container. More particularly, the present invention relates to a raw material melt supply apparatus capable of improving the quality and production efficiency of the obtained single crystal or polycrystal.

  Conventionally, semiconductor single crystals such as silicon and GaAs have been widely used as substrate materials for integrated circuits such as ICs and LSIs. In addition, semiconductor polycrystals are widely used as substrate materials for solar cells and the like. Various methods and apparatuses for manufacturing such single crystals and polycrystals have been proposed.

  Silicon polycrystals used in the production of solar cells and the like are cast, for example, as disclosed in JP-A-11-21120 (Patent Document 1) and JP-A-11-92284 (Patent Document 2). It is manufactured by. The casting method solidifies the silicon melt by gradually cooling silicon melted in the crucible from the bottom of the crucible, and ingot (solidified lump) mainly composed of a long columnar crystal structure grown upward from the bottom of the crucible. It is a manufacturing method.

  In addition, a method for growing a silicon ribbon made of a silicon polycrystal by a web method or an edge-defined film-fed growth (EFG) method has been studied. In recent years, the RGS (ribbon growth on substrate) method for producing a thin silicon ribbon made of a silicon polycrystal directly from a silicon melt has been attracting attention with the aim of achieving faster growth. 26th PVSC, 1997, pp. 91-93). The principle of the RGS method is to perform high-speed growth of a silicon ribbon by high-speed heat transfer (heat removal) from a surface close to the solidification growth surface. Specifically, the lower support plate supporting the open lower surface is moved relative to the side support frame supporting the periphery of the molten silicon in the lateral direction while cooling, so that the silicon is placed on the lower support plate. This is a method for growing a ribbon at a high speed.

  As another method for producing a substrate made of a silicon polycrystal, a sheet-like silicon substrate is obtained by bringing a base plate into contact with a silicon melt and solidifying from a liquid phase (sheet forming method). For example, it is disclosed in Japanese Patent Laid-Open No. 2001-223172 (Patent Document 3), Japanese Patent Laid-Open No. 2001-247396 (Patent Document 4), and the like.

  As one method for producing single crystal silicon, the Czochralski method (CZ method) is known. In the CZ method, for example, a graphite crucible is placed on the upper end of a crucible shaft installed in a chamber of a semiconductor single crystal manufacturing apparatus via a crucible holder, and a quartz crucible accommodated in the graphite crucible is filled with polycrystalline silicon. The polycrystalline silicon is heated and melted by a heater provided around the graphite crucible to obtain a melt. Then, the single crystal silicon can be grown by immersing the seed crystal attached to the seed chuck in the melt and pulling up the seed chuck while rotating the seed chuck and the graphite crucible in the same direction or in the opposite direction.

  In the above-described method for producing single crystals and polycrystals from a raw material melt such as a semiconductor, particularly in the case of producing crystals continuously (continuous replenishment method), consumption by the production of crystals. It is necessary to supply the raw material melt from outside the container as needed. In general, in order to supply these silicon melts, a solid raw material (for example, rod-shaped polycrystalline silicon) is melted by a heater to form a raw material melt, and the droplets are dropped from above into a heat-resistant container. A type of raw material melt supply device is often provided above the heat-resistant container. However, in such a conventional raw material melt supply apparatus, when the raw material melt droplets drop, the liquid surface of the raw material melt in the heat-resistant container is shaken, thereby adversely affecting the silicon crystal being grown. Thus, there are problems that it is difficult to produce single crystals and polycrystals, and that crystal characteristics deteriorate. Further, in a method in which a silicon plate is formed directly from the melt, such as a sheet forming method, the surface shape of the manufactured silicon plate may be adversely affected.

  Japanese Patent Application Laid-Open No. 7-27772 (Patent Document 5) describes a part of a semiconductor single crystal manufacturing apparatus that continuously manufactures a homogeneous semiconductor single crystal using a continuous charge method, where a droplet of a raw material melt drops. A raw material melt supply apparatus is disclosed in which the melt is covered with a supply pipe having a shape surrounded by a non-circular curve so that the fluctuation of the melt surface due to the drop of liquid droplets does not propagate to the surroundings. However, such a mechanism does not change that the melt surface shakes due to the drop of the raw material melt droplets, and it is difficult to completely prevent the surrounding melt surface shakes. .

Japanese Patent Laid-Open No. 11-21120 JP-A-11-92284 JP 2001-223172 A JP 2001-247396 A Japanese Patent Laid-Open No. 7-277872

  The present invention relates to a raw material melt supply apparatus used in a method for producing various single crystals or polycrystals from a raw material melt in a heat-resistant container, without requiring a particularly complicated mechanism. It is an object of the present invention to provide a raw material melt supply apparatus that can prevent the liquid surface of the raw material melt from shaking when being supplied into a heat resistant container.

  The present invention supplies a first heat-resistant container for storing a raw material melt, a second heat-resistant container, and a raw material melt in the second heat-resistant container into the first heat-resistant container. A discharge pipe of the supply pipe is in contact with the raw material melt in the first heat-resistant container, and the raw material melt in the second heat-resistant container is an inner wall of the supply pipe The raw material melt supply apparatus is characterized in that the raw material melt supply apparatus is supplied along with the first heat-resistant container.

  In the present invention, in a state where the raw material melt is flowing in the supply pipe, the surface of the raw material melt in the second heat-resistant container is the liquid of the raw material melt in the first heat-resistant container. It is preferable that the position is higher than the surface.

  In addition, an intake port of the supply pipe is connected to the second heat resistant container, and the intake port is located at the same level as the liquid level of the raw material melt stored in the second heat resistant container. It is preferable.

  Moreover, it is preferable that at least a part of the supply pipe is inclined downward with respect to the horizontal direction. Moreover, it is preferable to further include a heating mechanism for heating the inside of the supply pipe.

  When supplying the raw material melt to the first heat-resistant container, it is preferable to increase the distance between the inner wall of the supply pipe on the side along which the raw material melt is placed and the wall surface.

  Moreover, it is preferable to make small the liquid level difference of the raw material melt liquid surface stored in the said 1st heat resistant container, and the raw material melt liquid surface stored in the 2nd heat resistant container.

  Furthermore, the present invention also relates to a polycrystal or single crystal production apparatus provided with the above raw material melt supply apparatus.

  Furthermore, the present invention also relates to a method for producing a polycrystal or a single crystal using the above raw material melt supply apparatus. As the production method, a base plate is added to the raw material melt in the first heat-resistant container. There is a method of obtaining a sheet-like substrate made of a polycrystal directly by solidification from a raw material melt in a liquid phase state by bringing them into contact with each other.

  According to the present invention, when the raw material melt is supplied into the first heat-resistant container, the degree of shaking generated on the surface of the raw material melt can be reduced.

It is typical sectional drawing for demonstrating the raw material melt supply apparatus of this invention. It is side sectional drawing which shows an example of the board | substrate manufacturing apparatus using a sheet | seat formation method. It is a sectional side view which shows the operation state of the board | substrate manufacturing apparatus shown by FIG. (A1) is a longitudinal sectional view showing the supply pipe 9 and the raw material melts 42 and 43 for explaining the second embodiment, FIG. 4 (a2) is a transverse sectional view on the AA plane of (a1), ( b) and (c) are cross-sectional views of a supply pipe for explaining an example of the second embodiment. It is a longitudinal cross-sectional view for demonstrating 3rd embodiment. It is a longitudinal cross-sectional view for demonstrating 5th embodiment.

<First embodiment>
The present invention relates to a raw material melt supply apparatus for supplying a raw material melt to a first heat resistant container in a method for producing a polycrystal or a single crystal from the raw material melt stored in the first heat resistant container. It is.

  The raw material melt supply apparatus of this embodiment will be described with reference to FIG. In FIG. 1, a supply pipe 6 is connected to the second heat resistant container 2, and an intake port 602 of the supply pipe 6 is connected to the liquid surface of the raw material melt 401 stored in the second heat resistant container 2. Connected to the same height, the outlet 601 of the supply pipe 6 is in contact with the raw material melt 403 in the first heat-resistant container. By adopting such a structure, the raw material melt 4 overflowed by replenishing the raw material melt 401 in the second heat-resistant container with the solid raw material 5 runs along the lower portion of the inner wall of the supply pipe 6. It flows and is supplied to the raw material melt 403 in the first heat-resistant container. At this time, the raw material melt 402 in the supply pipe moves along the inner wall of the supply pipe 6 to move at a gentle speed, and flows into the raw material melt 403 in the first heat-resistant container at a slow speed. Therefore, the degree of shaking generated on the liquid surface of the raw material melt 403 can be reduced. In addition, since the raw material melt 401 in the second heat-resistant container is not supplied as droplets, there is no problem that silicon normally solidifies in a wiggle shape at the end of the supply pipe.

  Here, the central axis of the supply pipe inclined portion 603 is inclined downward with respect to the horizontal direction, and the raw material melt 402 flows along the lower portion of the inner wall of the supply pipe 6, so that the melt becomes gentle. It may be designed to be able to move. At this time, the angle formed between the central axis of the supply pipe and the horizontal direction is not particularly limited as long as the raw material melt flows along the inner wall of the supply pipe. For example, as shown in FIG. 603 may be a structure having a straight line and an angle with the horizontal direction, and at least a part or all of the supply pipe may be configured to be curved.

  Furthermore, the present invention also relates to a method for producing a polycrystal or a single crystal using the above raw material melt supply apparatus. The method for producing a polycrystal or single crystal is a method for obtaining a polycrystal or single crystal by a method such as solidifying the melt from a liquid phase using a raw material melt stored in a heat-resistant container. If there is no particular limitation, for example, the Czochralski method (CZ method) for producing a single crystal from a raw material melt, a casting method, a web method for producing a polycrystal from a raw material melt, EFG (edge-defined film-fed growth) method, a method of obtaining a sheet-like silicon substrate made of a polycrystal directly by bringing a base plate into contact with a raw material melt and solidifying from the raw material melt in a liquid phase (Sheet formation method).

(Sheet formation method)
A basic procedure for an example of the sheet forming method will be described below with reference to FIGS.

  Referring to FIG. 2, substrate manufacturing apparatus 7 has in main chamber 10 a heating mechanism (not shown) for heating crucible 3 and the crucible to melt silicon as a raw material. In the crucible 3, a raw material melt 403 melted by a heating mechanism is stored, and an immersion mechanism 9 for immersing the surface layer portion of the base plate 1 in the raw material melt 403 is disposed. An inert gas such as argon is introduced into the main chamber 10 to maintain an inert atmosphere.

  A suspension column 902 is connected to an elevating mechanism 901 attached to the outer wall of the main chamber 10. The suspension column 902 can be moved up and down by a motor in the lifting mechanism 901. The suspension column 902 penetrates into the main chamber 10. The penetration part isolates the outside of the main chamber by packing, a magnetic fluid seal or the like, and prevents outside air from being mixed into the main chamber. A rotation mechanism 903 having a rotation motor shaft 907 is connected to the tip of the suspension column 902. Two spindle columns 904 are connected under the rotation mechanism 903, and the spindle 905 penetrates in the horizontal direction at the lower end of the spindle column 904. Since the main shaft 905 and the motor shaft in the rotation mechanism are connected by a power transmission mechanism 906, the main shaft 905 can be rotated by the rotation mechanism 903. As the power transmission mechanism 906, a chain, a belt, a gear, or the like can be used. A pedestal support portion 908 is connected to the main shaft 905, and the pedestal 11 is connected to the tip. The pedestal 11 is a member that holds the base plate 1.

  Next, a method of manufacturing the silicon substrate on the surface of the base plate by immersing the base plate 1 in the raw material melt 403 will be described with reference to FIGS. After the dipping mechanism 9 grasps the base plate 1, the base plate 1 is operated as indicated by an arrow 802 by rotating the pedestal 11 by the rotating mechanism 903 while lowering the entire dipping mechanism by the lifting mechanism 901. Move from the exchange position 801 to a position to be immersed in the melt. Using the ascending / descending operation of the elevating mechanism 901 and the rotating operation of the rotating mechanism 903 as it is, the base plate 1 is immersed in the raw material melt 403 as shown by an arrow 803 to form a silicon substrate on the surface of the base plate. Thereafter, the base plate 1 to which the silicon substrate is attached is taken out from the raw material melt 403 as indicated by an arrow 804. Thereafter, the base plate 1 to which the silicon substrate is attached returns to the base plate replacement position 801 by the raising and lowering operation and the rotating operation as indicated by an arrow 805. Of the series of operations, the raising and lowering operations are indicated by arrows 806. When the base plate 1 integrated with the silicon substrate is cooled from a high temperature, the base plate 1 and the silicon substrate are naturally separated due to their thermal expansion coefficient difference, or a small impact is applied to the base plate 1. A sheet-like silicon substrate that is separated and formed directly by solidification from the liquid phase of the raw material melt is obtained.

  The average thickness of the silicon sheet obtained by such a sheet forming method is preferably set in the range of 100 μm to 1 mm. By setting the thickness of the silicon sheet to 100 μm or more, high handling properties can be obtained in the manufacturing process of a solar cell using the sheet. In addition, when the sheet thickness is 1 mm or less, the sheet manufacturing time can be shortened, and a low-cost silicon plate can be provided. From the viewpoint of ease of sheet production, it is more preferable that the average thickness of the sheet is in the range of 200 to 600 μm.

  When directly manufacturing such a silicon plate, it is possible to obtain a silicon plate having a good surface shape and crystal structure by using the raw material melt supply apparatus of the present invention. In the sheet forming method, a silicon plate is directly manufactured from a silicon melt, so that a silicon ingot slicing step as in the casting method is not required.

  In the sheet forming method, the initial temperature of the base plate on which the silicon polycrystal is formed is set to a temperature range lower than the melting point of silicon (1415 ° C.), and a graphite material having an appropriate thickness is used to reduce the heat capacity of the base plate. Appropriately, control the immersion time of the base plate in the silicon melt so as to obtain a silicon sheet of the optimum thickness, and further promote the solidification of the silicon solution by the fine uneven shape of the surface of the base plate It is preferable to set the basic conditions, and by setting these conditions, a polycrystalline silicon sheet can be formed at high speed and stably on the surface of the base plate, and a silicon sheet having a good shape and characteristics can be obtained. it can.

  As the material of the base plate used in the sheet forming method, for example, graphite or a base plate in which silicon carbide is formed on the surface by a thermal CVD method can be used, and in addition, ceramics such as silicon nitride, Heat-resistant metal that can withstand high temperatures, carbon, ceramics, or heat-resistant metal partially or wholly coated with ceramics can also be used. By using such a base plate, the base plate and silicon sheet can be easily peeled off. A silicon sheet having a good shape and characteristics can be obtained.

  On the surface of the base plate, grooves along the rotation direction of the base plate, or fine uneven surfaces arranged regularly or irregularly may be formed. The grooves and fine uneven surfaces formed on the surface of the base plate have a function of speeding up the growth of the silicon sheet.

  The temperature of the silicon melt at the time of manufacturing the silicon sheet is usually within the range from the supercooling temperature of 1380 ° C. or higher to the higher temperature of 1600 ° C. (for example, 1450 ° C.) depending on the balance with the growth conditions of the sheet. Can be set. After the silicon melt surface reaches a specified height, the base plate is immersed and a silicon sheet is grown on the surface.

  The raw material melt used in the present invention is usually a melt of a semiconductor or metal, and examples of the semiconductor melt include a melt of silicon and GaAs. Among these, a silicon melt is preferable.

<Second Embodiment>
The present embodiment includes a second heat-resistant container, a first heat-resistant container, and a supply pipe, and the melt is supplied from the second heat-resistant container to the first heat-resistant container along the inner wall of the supply pipe. Although it agree | coincides in a point, the shape of a supply pipe differs from 1st embodiment.

  The effect of reducing the degree of liquid level fluctuation by changing the shape of the supply pipe 6 in this embodiment will be described. The cross-sectional shape in the horizontal direction of the supply pipe 6 in this embodiment is not limited to a circle but may be an ellipse or a polygon such as a quadrangle or a hexagon, but the raw material melt is used as the first heat-resistant container 3. In this case, the distance between the inner wall along which the melt flows along with the wall surface is increased. Here, for example, when the cross section of the supply pipe is elliptical, as shown in FIGS. 4 (a1), (a2), and (b), the melt is supplied when the raw material melt is supplied to the first heat-resistant container. By making the long side of the ellipse the line connecting the wall facing the supply pipe inner wall along the liquid side, the wave generated on the liquid surface is spread to some extent in the pipe, and when the wave weakens, it is blocked by the supply pipe inner wall. It is possible to reduce the degree of shaking of the liquid level. 4 (a1) is a longitudinal sectional view showing the supply pipe 6 and the raw material melts 402 and 403, and FIG. 4 (a2) is a transverse sectional view on the AA plane of (a1). This effect can be obtained by making the radius of the circle larger than 20 mm for a supply pipe having a circular cross section (by making the long side larger than 40 mm for an ellipse as in the present embodiment) and having a large number of cross sections. In the case of a rectangular supply pipe, the same effect can be produced by elongating one side as shown in FIG.

  Furthermore, when the first heat-resistant container rotates as in the Czochralski method (CZ method), the level of the liquid level is further reduced by making the shape of the supply pipe streamlined. Can do.

<Third embodiment>
In this embodiment, the attachment position of the supply pipe with respect to the second heat-resistant container is changed.

  The present embodiment includes a second heat-resistant container, a first heat-resistant container, and a supply pipe, and the melt is supplied from the second heat-resistant container to the first heat-resistant container along the inner wall of the supply pipe. Although it agree | coincides in a point, the attachment position of a supply pipe differs from 1st embodiment. In the present embodiment, the supply pipe is attached to the bottom of the second heat-resistant container.

  Here, the raw material melt supply apparatus according to the present embodiment will be described with reference to FIG. In the raw material melt supply apparatus according to the present embodiment, a supply pipe 6 is attached to the bottom of the second heat-resistant container 2, a gate valve 605 that controls the amount of the raw material melt 401 that falls, and the raw material melt 401. Is provided with a melt guiding mechanism 606 for guiding the liquid to the inner wall surface of the supply pipe.

  Thereby, the raw material melt dropped from the second heat-resistant container is guided to the inner wall surface of the supply pipe by the melt guiding mechanism 606, and the raw material melt 402 is supplied to the first heat-resistant container 3 along the inner wall of the supply pipe. The Rukoto. By setting the attachment position of the supply pipe in this way, the flow rate of the melt can be easily adjusted by the gate valve 605 or the like.

<Fourth embodiment>
The present embodiment includes a second heat-resistant container, a first heat-resistant container, and a supply pipe, and the melt is supplied from the second heat-resistant container to the first heat-resistant container along the inner wall of the supply pipe. Although it agree | coincides in a point, the depth by which the supply pipe is immersed in the raw material melt liquid surface in a 1st heat resistant container differs from 1st embodiment.

  Since the present invention can supply a large amount of raw material melt at a time, compared with the method of supplying the raw material melt by dropping the raw material melt into droplets, A large impact is given to the liquid surface. When a large amount of raw material melt is supplied at a time, the impact applied to the surface of the raw material melt in the first heat-resistant container by the dropping of the raw material melt is not only superficial. Then, the liquid pipe wraps around from below the supply pipe 6 to cause the liquid level to sway.

  Therefore, by deeply immersing the supply pipe 6 into the raw material melt 403 in the first heat-resistant container, it is possible to cut off the impact transmitted from the bottom of the supply pipe 6 and reduce the level of liquid level fluctuation. it can. Here, the depth for immersing the supply pipe 6 may be about 60 mm, or may be deeper.

  As described above, in the present embodiment, when the melt is supplied by deeply immersing the supply pipe 6 in the melt, the shock applied to the liquid surface by the melt is absorbed and the generated shock is alleviated. The degree of shaking can be reduced.

<Fifth embodiment>
In this embodiment, the difference between the liquid level of the raw material melt in the second heat resistant container and the liquid level of the raw material melt in the first heat resistant container is reduced, or the supply pipe is vertically downward. By shortening the portion, it is possible to reduce the impact generated when supplying the raw material melt.

  The present embodiment includes a second heat-resistant container, a first heat-resistant container, and a supply pipe, and the melt is supplied from the second heat-resistant container to the first heat-resistant container along the inner wall of the supply pipe. Although it agree | coincides in a point, the magnitude | size of the liquid level difference of a 2nd heat resistant container and a 1st heat resistant container or a structure of a supply pipe | tube differs from 1st embodiment.

  The raw material melt supply apparatus according to this embodiment will be described with reference to FIG. In the raw material melt supply apparatus according to this embodiment, the liquid level difference (a) between the liquid level of the raw material melt 401 in the second heat-resistant container and the liquid level of the raw material melt 403 in the first heat-resistant container. It is smaller than that of the first embodiment. Further, the inclination angle of the supply pipe inclined part 603 is gentle, and the supply pipe vertical direction forming part 604 is configured to be short. Since the inclination angle of the supply pipe inclined portion 603 is gentle, the acceleration in the traveling direction received by the raw material melt 402 in the supply pipe is reduced, so that the speed of the raw material melt 402 in the supply pipe is low. Become.

  Further, since the raw material melt 402 in the supply pipe is subjected to the largest acceleration when it is in the supply pipe vertical direction forming portion 604, the speed of the raw material melt 402 in the supply pipe is reduced by shortening this length. be able to. From this, the speed at which the raw material melt supplied from the second heat-resistant container 2 moves along the inner wall surface of the supply pipe can be made slower than in the first embodiment.

  Therefore, when the melt is supplied to the first heat-resistant container, the impact on the liquid level is reduced, and the fluctuation of the liquid level can be reduced. Here, the difference between the liquid level of the second heat-resistant container and the liquid level of the first heat-resistant container is desirably about 200 mm.

  In addition, a heating device for heating the raw material melt in the container is usually provided around the first heat-resistant container and the second heat-resistant container, but in the present embodiment, in the supply pipe In order for the raw material melt to suppress solidification, it is preferable to cover the supply pipe with a heat insulating material. Furthermore, it is preferable to further include a supply pipe heating mechanism 12 for heating the inside of the supply pipe.

  Here, the supply pipe heating mechanism 12 may be a resistance heating system, or may be a high-frequency heating system heating mechanism having an equivalent ability. In particular, when a high-frequency heating method is used, it is preferable to provide a heat shielding plate 301 on the melt surface of the first heat-resistant container. This is to shield the radiant heat from the melt surface and protect the supply pipe heating mechanism 12.

  By providing the supply pipe heating mechanism 12 around the supply pipe 6, the angle of the supply pipe is made gentle as in this embodiment, and when the speed at which the melt flows is made slow, the raw material melt is solidified in the supply pipe. It can be prevented from occurring.

  The embodiments disclosed this time are to be considered as illustrative in all points and not restrictive. The scope of the present invention is defined by the terms of the claims, rather than the description above, and is intended to include any modifications within the scope and meaning equivalent to the terms of the claims.

  DESCRIPTION OF SYMBOLS 1 Base plate, 2nd heat resistant container, 3 1st heat resistant container (crucible), 301 Heat shielding board, 4 Raw material melt, 401 Raw material melt in 2nd heat resistant container, 402 In supply pipe Raw material melt, 403 raw material melt in the first heat-resistant container, 5 solid raw material, 6 supply pipe, 601 discharge port, 602 intake port, 603 supply pipe inclined part, 604 supply pipe vertical direction forming part, 605 Gate valve, 606 Melt guidance mechanism, 7 Substrate manufacturing device, 801 Substrate replacement position, 9 Immersion mechanism, 901 Lifting mechanism, 902 Suspension strut, 903 Rotating mechanism, 904 Spindle strut, 905 Spindle, 906 Power transmission mechanism, 907 Rotation Motor shaft, 908 pedestal support, 10 main chamber, 11 pedestal, 12 Supply pipe heating mechanism.

Claims (4)

A first heat-resistant container for storing the raw material melt, a second heat-resistant container, and a supply pipe for supplying the raw material melt in the second heat-resistant container into the first heat-resistant container And
The supply pipe includes an intake port connected to a side surface of the second heat-resistant container, an inclined portion extending downward from the intake port in a horizontal direction and extending from the inclined portion to the horizontal direction. A discharge port extending downward to come into contact with the raw material melt in the first heat-resistant container,
The position of the liquid level of the raw material melt in the second heat-resistant container is higher than the liquid level of the raw material melt in the first heat-resistant container and the upper end of the intake port of the supply pipe The raw material melt in the second heat-resistant container is in a state between the lower end and the lower end, and the discharge port of the supply pipe is immersed in the raw material melt in the first heat-resistant container. Flowing along the inner wall of the supply pipe and fed into the first heat-resistant container ,
When supplying the raw material melt to the first heat-resistant container, a distance between the inner wall surface of the supply pipe on the side along which the raw material melt is disposed and the inner wall surface facing the opposite surface is orthogonally opposed thereto. A raw material melt supply apparatus characterized in that it is longer than the distance between the inner wall surfaces .   The raw material melt supply apparatus according to claim 1, further comprising a heating mechanism for heating the inside of the supply pipe. To claim 1 or 2 with a material melt supply apparatus according apparatus for producing a polycrystalline body or single crystal. The manufacturing method of the polycrystal or the single crystal using the raw material melt supply apparatus of Claim 1 or 2 .

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