CN100477123C - 用于减小多晶硅高度的SOI底部预掺杂合并e-SiGe - Google Patents

用于减小多晶硅高度的SOI底部预掺杂合并e-SiGe Download PDF

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CN100477123C
CN100477123C CNB200610075110XA CN200610075110A CN100477123C CN 100477123 C CN100477123 C CN 100477123C CN B200610075110X A CNB200610075110X A CN B200610075110XA CN 200610075110 A CN200610075110 A CN 200610075110A CN 100477123 C CN100477123 C CN 100477123C
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silicon body
doping
layer
transistor
boron
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Expired - Fee Related
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CNB200610075110XA
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Chinese (zh)
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CN1855391A (zh
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幸山裕亮
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Toshiba Corp
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Toshiba Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • H10D30/875—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET] having thin-film semiconductor bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26586—Bombardment with radiation with high-energy radiation producing ion implantation characterised by the angle between the ion beam and the crystal planes or the main crystal surface
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
    • H10D30/0227—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate having both lightly-doped source and drain extensions and source and drain regions self-aligned to the sides of the gate, e.g. lightly-doped drain [LDD] MOSFET or double-diffused drain [DDD] MOSFET
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/027—Manufacture or treatment of FETs having insulated gates [IGFET] of lateral single-gate IGFETs
    • H10D30/0275—Manufacture or treatment of FETs having insulated gates [IGFET] of lateral single-gate IGFETs forming single crystalline semiconductor source or drain regions resulting in recessed gates, e.g. forming raised source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/608—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having non-planar bodies, e.g. having recessed gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/791—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions
    • H10D30/797—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions being in source or drain regions, e.g. SiGe source or drain
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/01—Manufacture or treatment
    • H10D62/021—Forming source or drain recesses by etching e.g. recessing by etching and then refilling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/822—Heterojunctions comprising only Group IV materials heterojunctions, e.g. Si/Ge heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/015—Manufacture or treatment removing at least parts of gate spacers, e.g. disposable spacers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/021—Manufacture or treatment using multiple gate spacer layers, e.g. bilayered sidewall spacers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0167—Manufacturing their channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/017—Manufacturing their source or drain regions, e.g. silicided source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI

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  • Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
CNB200610075110XA 2005-04-18 2006-04-18 用于减小多晶硅高度的SOI底部预掺杂合并e-SiGe Expired - Fee Related CN100477123C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/107,843 2005-04-18
US11/107,843 US7605042B2 (en) 2005-04-18 2005-04-18 SOI bottom pre-doping merged e-SiGe for poly height reduction

Publications (2)

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CN1855391A CN1855391A (zh) 2006-11-01
CN100477123C true CN100477123C (zh) 2009-04-08

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US (1) US7605042B2 (enExample)
JP (1) JP2006319326A (enExample)
CN (1) CN100477123C (enExample)
TW (1) TWI307532B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104425281B (zh) * 2013-09-09 2018-08-24 中芯国际集成电路制造(上海)有限公司 半导体器件的形成方法

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007281038A (ja) * 2006-04-03 2007-10-25 Toshiba Corp 半導体装置
JP5287621B2 (ja) 2009-09-10 2013-09-11 富士通セミコンダクター株式会社 半導体装置
CN103794559A (zh) * 2012-10-29 2014-05-14 中芯国际集成电路制造(上海)有限公司 一种半导体器件及其制备方法
CN104217953B (zh) * 2013-06-05 2017-06-13 中芯国际集成电路制造(上海)有限公司 Pmos晶体管及其制作方法
US9281196B2 (en) * 2013-12-31 2016-03-08 Taiwan Semiconductor Manufacturing Co., Ltd. Method to reduce etch variation using ion implantation
CN105990142A (zh) * 2015-02-03 2016-10-05 中芯国际集成电路制造(上海)有限公司 Mos晶体管及其制作方法

Citations (7)

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US5663570A (en) * 1993-07-12 1997-09-02 Peregrine Semiconductor Corporation High-frequency wireless communication system on a single ultrathin silicon on sapphire chip
US5869359A (en) * 1997-08-20 1999-02-09 Prabhakar; Venkatraman Process for forming silicon on insulator devices having elevated source and drain regions
US6051509A (en) * 1997-03-25 2000-04-18 Kabushiki Kaisha Toshiba Semiconductor integrated circuit manufacturing method and device
CN1437769A (zh) * 1999-12-30 2003-08-20 英特尔公司 具有部分隔离的源/漏结的场效应晶体管结构及其制造方法
CN1444281A (zh) * 2002-03-11 2003-09-24 日本电气株式会社 薄膜半导体器件及其制造该器件的方法
CN1527379A (zh) * 2003-03-04 2004-09-08 ̨������·����ɷ����޹�˾ 具有晶格不相称区的变形沟道晶体管结构及其制造方法
CN1595624A (zh) * 2004-06-18 2005-03-16 北京大学 一种准soi场效应晶体管器件的制备方法

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EP0459763B1 (en) * 1990-05-29 1997-05-02 Semiconductor Energy Laboratory Co., Ltd. Thin-film transistors
JPH06310719A (ja) * 1993-04-19 1994-11-04 Sharp Corp Ｇｅ−ＳｉのＳＯＩ型ＭＯＳトランジスタ及びその製造方法
US6633066B1 (en) 2000-01-07 2003-10-14 Samsung Electronics Co., Ltd. CMOS integrated circuit devices and substrates having unstrained silicon active layers
US6303450B1 (en) * 2000-11-21 2001-10-16 International Business Machines Corporation CMOS device structures and method of making same
US6593625B2 (en) 2001-06-12 2003-07-15 International Business Machines Corporation Relaxed SiGe layers on Si or silicon-on-insulator substrates by ion implantation and thermal annealing
US6780686B2 (en) * 2002-03-21 2004-08-24 Advanced Micro Devices, Inc. Doping methods for fully-depleted SOI structures, and device comprising the resulting doped regions
TW530385B (en) 2002-03-27 2003-05-01 Taiwan Semiconductor Mfg CMOS with strain-balanced structure and method of manufacturing the same
US6911379B2 (en) 2003-03-05 2005-06-28 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming strained silicon on insulator substrate
US7138309B2 (en) * 2005-01-19 2006-11-21 Sharp Laboratories Of America, Inc. Integration of biaxial tensile strained NMOS and uniaxial compressive strained PMOS on the same wafer

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5663570A (en) * 1993-07-12 1997-09-02 Peregrine Semiconductor Corporation High-frequency wireless communication system on a single ultrathin silicon on sapphire chip
US6051509A (en) * 1997-03-25 2000-04-18 Kabushiki Kaisha Toshiba Semiconductor integrated circuit manufacturing method and device
US5869359A (en) * 1997-08-20 1999-02-09 Prabhakar; Venkatraman Process for forming silicon on insulator devices having elevated source and drain regions
CN1437769A (zh) * 1999-12-30 2003-08-20 英特尔公司 具有部分隔离的源/漏结的场效应晶体管结构及其制造方法
CN1444281A (zh) * 2002-03-11 2003-09-24 日本电气株式会社 薄膜半导体器件及其制造该器件的方法
CN1527379A (zh) * 2003-03-04 2004-09-08 ̨������·����ɷ����޹�˾ 具有晶格不相称区的变形沟道晶体管结构及其制造方法
CN1595624A (zh) * 2004-06-18 2005-03-16 北京大学 一种准soi场效应晶体管器件的制备方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104425281B (zh) * 2013-09-09 2018-08-24 中芯国际集成电路制造(上海)有限公司 半导体器件的形成方法

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US7605042B2 (en) 2009-10-20
TW200644129A (en) 2006-12-16
US20060234432A1 (en) 2006-10-19
CN1855391A (zh) 2006-11-01
TWI307532B (en) 2009-03-11
JP2006319326A (ja) 2006-11-24

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