CN100474560C - 集成电路中厚金属电感的制作方法 - Google Patents
集成电路中厚金属电感的制作方法 Download PDFInfo
- Publication number
- CN100474560C CN100474560C CNB2005101112876A CN200510111287A CN100474560C CN 100474560 C CN100474560 C CN 100474560C CN B2005101112876 A CNB2005101112876 A CN B2005101112876A CN 200510111287 A CN200510111287 A CN 200510111287A CN 100474560 C CN100474560 C CN 100474560C
- Authority
- CN
- China
- Prior art keywords
- etching
- thick metal
- gas
- integrated circuit
- watts
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Abstract
Description
Claims (5)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2005101112876A CN100474560C (zh) | 2005-12-08 | 2005-12-08 | 集成电路中厚金属电感的制作方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2005101112876A CN100474560C (zh) | 2005-12-08 | 2005-12-08 | 集成电路中厚金属电感的制作方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1979800A CN1979800A (zh) | 2007-06-13 |
CN100474560C true CN100474560C (zh) | 2009-04-01 |
Family
ID=38130904
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2005101112876A Active CN100474560C (zh) | 2005-12-08 | 2005-12-08 | 集成电路中厚金属电感的制作方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN100474560C (zh) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8860544B2 (en) | 2007-06-26 | 2014-10-14 | Mediatek Inc. | Integrated inductor |
CN103050398B (zh) * | 2011-10-14 | 2016-01-20 | 无锡华润上华半导体有限公司 | 一种半导体厚金属结构制作方法 |
KR20130043063A (ko) * | 2011-10-19 | 2013-04-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
CN104835908A (zh) * | 2015-04-17 | 2015-08-12 | 上海华虹宏力半导体制造有限公司 | 用于3d amr的氮化钽刻蚀方法 |
CN107359115A (zh) * | 2017-07-20 | 2017-11-17 | 武汉新芯集成电路制造有限公司 | 焊盘的形成方法 |
CN112234027A (zh) * | 2020-10-14 | 2021-01-15 | 天津津航计算技术研究所 | 一种2.5d电子封装结构 |
-
2005
- 2005-12-08 CN CNB2005101112876A patent/CN100474560C/zh active Active
Also Published As
Publication number | Publication date |
---|---|
CN1979800A (zh) | 2007-06-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN100474560C (zh) | 集成电路中厚金属电感的制作方法 | |
JP2007311584A5 (zh) | ||
JP2009505385A5 (zh) | ||
CN102931941A (zh) | 一种薄膜体声波谐振器基片及其制备方法 | |
JP2009530861A5 (zh) | ||
CN1115117A (zh) | 形成半导体器件金属互连的方法 | |
JP3441372B2 (ja) | 白金食刻方法 | |
CN108847574A (zh) | 一种脊波导电极开窗的方法 | |
CN100468690C (zh) | 高深宽比自对准接触刻蚀中减低接触电阻的方法 | |
CN104795358A (zh) | 钴阻挡层的形成方法和金属互连工艺 | |
Sharma et al. | Molybdenum etching using an SF6, BCl3 and Ar based recipe for high aspect ratio MEMS device fabrication | |
CN100373588C (zh) | 一种交叉线阵列结构有机分子器件的制备方法 | |
CN103377910B (zh) | 半导体器件的刻蚀方法 | |
US7341955B2 (en) | Method for fabricating semiconductor device | |
Kim et al. | Air gap type thin film bulk acoustic resonator fabrication using simplified process | |
US7247572B2 (en) | Method for fabricating a capacitor using a metal insulator metal structure | |
US9238870B2 (en) | Plasma etch for chromium alloys | |
CN115021699B (zh) | 一种金属层的制备方法、体声波滤波器以及制备方法 | |
JP4393175B2 (ja) | 半導体素子の金属配線層形成方法 | |
CN108400128A (zh) | 互连结构及其制造方法 | |
KR100875795B1 (ko) | 반도체 장치 형성 방법 | |
US20240109771A1 (en) | Methods for sealing cavities in micro-fabricated devices and micro-fabricated devices fabricated in accordance with same | |
CN208766626U (zh) | 金属网格触摸屏用基材、金属网格触摸屏及触摸显示装置 | |
CN106783321A (zh) | 一种开关模组及其制作方法 | |
JP2006128245A (ja) | 絶縁膜の加工方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20140108 |
|
C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 201206 PUDONG NEW AREA, SHANGHAI TO: 201203 PUDONG NEW AREA, SHANGHAI |
|
TR01 | Transfer of patent right |
Effective date of registration: 20140108 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Patentee after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Patentee before: Shanghai Huahong NEC Electronics Co., Ltd. |