CN100459331C - Asymmetric ridge gallium nitride base semiconductor laser and manufacturing method thereof - Google Patents
Asymmetric ridge gallium nitride base semiconductor laser and manufacturing method thereof Download PDFInfo
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- CN100459331C CN100459331C CNB2006100674601A CN200610067460A CN100459331C CN 100459331 C CN100459331 C CN 100459331C CN B2006100674601 A CNB2006100674601 A CN B2006100674601A CN 200610067460 A CN200610067460 A CN 200610067460A CN 100459331 C CN100459331 C CN 100459331C
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Abstract
A method for preparing asymmetric semiconductor laser with ridge GaN base includes growing ohm contact layer, bottom limit layer, bottom waveguide layer, active layer, electronic blocking layer, top waveguide layer, top limit layer, covering layer in sequence on substrate; forming said top limit layer to be step form by etching and then preparing insulation layer and ohm electrode.
Description
Technical field
The invention belongs to field of semiconductor devices, be meant a kind of asymmetric ridge waveguide gallium nitride base semiconductor laser and preparation method thereof especially.
Background technology
As third generation semiconductor, gallium nitride (GaN) and series material thereof (comprising aluminium nitride, aluminum gallium nitride, indium gallium nitrogen, indium nitride) are big with its energy gap, spectral region is wide (having covered from ultraviolet to infrared all band), heat-resisting quantity and good corrosion resistance, in optoelectronics and microelectronics field huge using value are arranged.The GaN base laser is a kind of very important GaN base optical electronic part, because the light wave of its emission is in the royal purple optical band, the GaN base laser the induction of the storage of high density optical information, Projection Display, laser printing, subsurface communication, biological chemical reagent and activation and medical aspect have important use and be worth.Many applications such as information stores, laser printing are necessary especially and with the GaN base laser of basic mode work.Ridged waveguide structure is widely adopted in semiconductor laser because its light in the direction that is parallel to knot limits and the effect of electric current restriction.In order to obtain GaN base laser, adopt the method for etching to form symmetrical ridge structure usually with the basic mode steady operation.The ridge structure of this symmetry will realize that the ridge width that laser basic mode work is allowed can not be greater than 3 μ m.Because the restriction of injected current density, this structure can cause the power output of laser obviously on the low side, hinders the GaN base laser in many application that need high power laser light output field.
Summary of the invention
The objective of the invention is to, a kind of asymmetric ridge waveguide gallium nitride base semiconductor laser is provided, it is to utilize lithographic method to form asymmetric ridge waveguide GaN base laser structure in the direction that is parallel to knot, this structure is worked under basic mode at the wide laser of also can realizing when big of ridged bar, the ridge width that the work of the more common ridge structure realization of the ridge width of this structure basic mode is allowed is big, under the identical situation of injected current density, can increase injection current, thereby improve the power output of laser when basic mode is worked.
Another object of the present invention is to, a kind of manufacture method of asymmetric ridge waveguide gallium nitride base semiconductor laser is provided, have the simple and cost-effective advantage of technology.
A kind of asymmetric ridge waveguide gallium nitride base semiconductor laser of the present invention is characterized in that, comprising:
One substrate;
One ohmic contact layer, this ohmic contact layer is produced on the substrate;
One lower limit layer, this lower limit layer is produced on the ohmic contact layer, and the area of this lower limit layer is less than ohmic contact layer;
One lower waveguide layer, this lower waveguide layer is produced on the lower limit layer;
One active layer, this active layer is produced on the lower waveguide layer;
One electronic barrier layer, this electronic barrier layer is produced on the active layer;
Ducting layer on one, ducting layer is produced on the electronic barrier layer on this;
One upper limiting layer, this upper limiting layer is produced on the ducting layer, and this upper limiting layer is forming step-like structure away from N electrode one side after etching, and Shang Mian one deck area is more little, and only etches a breach in the side near the N electrode;
One cover layer, this cover layer be grown in upper limiting layer above, after the ridge structure etching finishes, have only on the part upper limiting layer of area minimum to keep cover layer;
One insulating barrier, this insulating barrier are produced on the part ohmic contact layer, on the part upper limiting layer, and lower limit layer, lower waveguide layer, active layer, electronic barrier layer, go up ducting layer, upper limiting layer and a tectal side;
One Ohmic electrode, this Ohmic electrode is produced on the ohmic contact layer;
One Ohmic electrode, this Ohmic electrode are produced on the insulating barrier on tectal upper surface and the part upper limiting layer and on the insulating barrier on cover layer one side.
Wherein said substrate is a sapphire material.
Wherein the height of the step-like structure that forms in a side of ridged behind over etching of this upper limiting layer is that 0.1 μ m is that 3 μ m are to 5 μ m to 0.3 μ m, width.
The manufacture method of a kind of asymmetric ridge waveguide gallium nitride base semiconductor laser of the present invention is characterized in that, comprises the steps:
(1) gets a substrate;
(2) make successively on the substrate growth ohmic contact layer, lower limit layer, lower waveguide layer, active layer, electronic barrier layer, on ducting layer, upper limiting layer and cover layer;
(3) etching is for the first time utilized two step alignments, with upper limiting layer in the described device architecture of step 2 and cover layer etching, makes a side form a breach, and opposite side forms step-like structure;
(4) etching for the second time will not have a side of step to etch into the ohmic contact layer place in the device architecture of step 3;
(5) make insulating barrier at part ohmic contact layer, part upper limiting layer upper surface, and lower limit layer, lower waveguide layer, active layer, electronic barrier layer, on ducting layer, upper limiting layer and a tectal side make insulating barrier;
(6) on ohmic contact layer, make Ohmic electrode;
(7) on the insulating barrier of tectal upper surface and part upper limiting layer upper surface and the insulating barrier on cover layer one side, make Ohmic electrode, finish the making of device.
Wherein said substrate is a sapphire material.
Wherein the height of the step-like structure that forms in a side of ridged behind over etching of this upper limiting layer is that 0.1 μ m is that 3 μ m are to 5 μ m to 0.3 μ m, width.
The present invention improves the structure of common ridged GaN base laser.It is with the common identical etching depth in ridged GaN base laser ridged both sides, one side change into away from the N electrode increase a width greater than 3 μ m, highly be the step of 0.1,0.3 μ m.This structure causes forming asymmetric three layers of waveguide in the direction that is parallel to knot, and high-rder mode still can be cut off when ridge width is big.Because the ridge width of this structure obviously increases than the ridge width of ordinary construction, the power output of laser can be significantly improved.Simultaneously, because a side away from the N electrode at ridged, increased the less step of one deck etching depth, can cause hole current to this side to a certain degree expansion and make the more common ridge structure GaN base laser of distribution of charge carrier active area under ridged more tend to symmetry.Output optical power when therefore, this novel ridged GaN base laser can improve laser significantly and works with basic mode.
Description of drawings
For further specifying technology contents of the present invention, below in conjunction with embodiment and accompanying drawing describes in detail as after, wherein:
Fig. 1 is the material structure schematic diagram of ridged GaN base laser among the present invention;
Fig. 2 is the structural representation of ridged GaN base laser after first step etching among the present invention;
Fig. 3 is the structural representation of ridged GaN base laser after two step etchings among the present invention;
Fig. 4 is the device architecture schematic diagram of ridged GaN base laser among the present invention;
Embodiment
See also shown in Figure 4, a kind of asymmetric ridge waveguide gallium nitride base semiconductor laser of the present invention, comprising:
One substrate 10, this substrate 10 is a sapphire material;
One ohmic contact layer 11, this ohmic contact layer 11 is produced on the substrate 10;
One lower limit layer 12, this lower limit layer 12 be produced on ohmic contact layer 11 on, the area of this lower limit layer 12 is less than ohmic contact layer 11;
One lower waveguide layer 13, this lower waveguide layer 13 is produced on the lower limit layer 12;
One active layer 14, this active layer 14 is produced on the lower waveguide layer 13;
One electronic barrier layer 15, this electronic barrier layer 15 is produced on the active layer 14;
One upper limiting layer 17, this upper limiting layer 17 is produced on the ducting layer 16, and this upper limiting layer 17 forms the different ledge structure of area after etching, and Shang Mian one deck area is more little; This upper limiting layer 17 height at the ledge structure of ridged behind over etching is that 0.1 μ m is that 3 μ m are to 5 μ m to 0.3 μ m, width.
One cover layer 18, this cover layer 18 be grown in upper limiting layer 17 above, after the ridge structure etching finishes, have only on the part upper limiting layer 17 of area minimum to keep cover layer 18;
One insulating barrier 41, this insulating barrier 41 is produced on part ohmic contact layer 11, the part upper limiting layer 17, and lower limit layer 12, lower waveguide layer 13, active layer 14, electronic barrier layer 15, goes up a side of ducting layer 16, upper limiting layer 17 and cover layer 18;
One Ohmic electrode 42, this Ohmic electrode are produced on the ohmic contact layer 11;
One Ohmic electrode 43, this Ohmic electrode are produced on the upper surface and the insulating barrier 41 on upper limiting layer 17 and the cover layer 18 of cover layer 18.
See also Fig. 1 to shown in Figure 4, the manufacture method of a kind of asymmetric ridge waveguide gallium nitride base semiconductor laser of the present invention comprises the steps:
(1) get a substrate 10, this substrate 10 is a sapphire material;
(2) make successively on the substrate 10 growth ohmic contact layer 11, lower limit layer 12, lower waveguide layer 13, active layer 14, electronic barrier layer 15, on ducting layer 16, upper limiting layer 17 and cover layer 18 (shown in Figure 1);
(3) etching is for the first time utilized two step alignments, with upper limiting layer 17 in the described device architecture of step 2 and cover layer 18 etchings, makes a side form a breach, and opposite side forms ledge structure (Fig. 2 and shown in Figure 3); The height of the ledge structure that this upper limiting layer 17 forms in a side of ridged behind over etching is that 0.1 μ m is that 3 μ m are to 5 μ m to 0.3 μ m, width;
(4) etching for the second time will not have a side of step to etch into ohmic contact layer 11 places (shown in Figure 4) in the device architecture of step 3;
(5) make insulating barrier 41 at part ohmic contact layer 11, part upper limiting layer 17 upper surfaces, and lower limit layer 12, lower waveguide layer 13, active layer 14, electronic barrier layer 15, on a side of ducting layer 16, upper limiting layer 17 and cover layer 18 make insulating barrier 41 (shown in Figure 4);
(6) on ohmic contact layer 11, make Ohmic electrode 42 (shown in Figure 4);
(7) on the upper surface of cover layer 18 and the insulating barrier 41 on upper limiting layer 17 and the cover layer 18, make Ohmic electrode 43 (shown in Figure 4), finish the making of device.
Embodiment
Please in conjunction with consulting Fig. 1 to shown in Figure 4, the device preparation process of the novel ridged GaN base laser that the present invention proposes is: with the sapphire material is substrate 10, utilizes the equipment of MOCVD, MBE or other growth GaN materials to grow device architecture.This structure comprises that N type GaN ohmic contact layer 11, N type AlGaN lower limit layer 12, N type GaN lower waveguide layer 13, InGaN/GaN active layer 14, AlGaN electronic barrier layer 15, P type GaN go up ducting layer 16, P type AlGaN upper limiting layer 17 and P type GaN cover layer 18.Carve asymmetric ridged ledge structure in two steps with methods such as dry etchings, the ridged length direction is along [11-20] direction of gallium nitride, the first step carves a ridged that wide height is little earlier, one side second step was continued etching to form needed asymmetric ridge structure again with what the mask plate of laser ridged was aimed at ridged that first step etching forms.Continue etching up to exposing the N-GaN ohmic contact layer in the zone that makes the N electrode.The steam coating silicon dioxide insulating barrier.Evaporation Ohm contact electrode metal and thermal annealing are realized Ohm contact electrode.Substrate 10 is thinned to about 100 μ m.Epitaxial wafer is divided into rectangular along [11-20] direction scribing of gallium nitride, rectangular (11-20) face along gallium nitride is cleaved into the long laser tube core in designed chamber.Two chamber face evaporation dielectric reflection films at laser tube core.At last again the pressure welding extraction electrode, be packaged into laser device.This structure is worked under basic mode at the wide laser of also can realizing when big of ridged bar, the ridge width that the work of the more common ridge structure realization of the ridge width of this structure basic mode is allowed is big, under the identical situation of injected current density, can increase injection current, thereby improve the power output of laser when basic mode is worked.
In order to further specify the effect of this device architecture, we are that the GaN base laser of 405nm is the preparation process that example illustrates this device architecture with the operation wavelength.The material and the thickness of each layer see Table 1.Specific as follows: as to utilize the MOCVD method to grow device architecture on for substrate 10 in sapphire material.This structure comprises that (thickness is 5 μ m to N type GaN ohmic contact layer 11, and doping content is 3 * 10
18Cm
-3), N type Al
0.1Ga
0.9(thickness is 0.8 μ m to N lower limit layer 12, and doping content is 3 * 10
18Cm
-3), (thickness is 0.08 μ m to N type GaN lower waveguide layer 13, and doping content is 5 * 10
15Cm
-3), In
0.15Ga
0.85(Multiple Quantum Well is 5 cycles to N/GaN active region layer 14, and the InGaN trap is wide to be 3nm, and it is 8nm that GaN builds wide, and doping content is 3 * 10
17Cm
-3), Al
0.2Ga
0.8(thickness is 20nm to N electronic barrier layer 15, and doping content is 5 * 10
15Cm
-3), P type GaN goes up ducting layer 16 (thickness is 0.08 μ m, and doping content is 3 * 10
17Cm
-3), P type Al
0.08Ga
0.92(thickness is 0.6 μ m to N upper limiting layer 17, and doping content is 8 * 10
19Cm
-3) and P type GaN cover layer 18 (thickness is 0.2 μ m, and doping content is 2.4 * 10
20Cm
-3).Carve asymmetric ridged ledge structure in two steps with reactive ion etching method, rectangular [11-20] direction of ridged along gallium nitride.The height that it is 9 μ m that the first step carves a width earlier is the ridged of 0.15 μ m, second step with laser ridged (ridge width is 5 μ m) mask plate aim at the etching 0.6 μ m that continues again of ridged that first step etching forms and meanwhile to form etching depth be that 0.75 μ m another side etching depth is the asymmetric ridge structure of 0.6 μ m.Continue etching 1.2 μ m to expose the N-GaN ohmic contact layer in the zone that makes the N electrode.The steam coating silicon dioxide insulating barrier, evaporation Ohm contact electrode metal and thermal annealing are realized Ohm contact electrode.Substrate 10 is thinned to about 100 μ m.Be divided into rectangular along [11-20] direction scribing of gallium nitride epitaxial wafer.With rectangular (11-20) face cleavage coelosis length along gallium nitride is the laser tube core of 800 μ m.The a pair of TiO of front facet evaporation at laser tube core
2/ SiO
2Reflectance coating, three couples of TiO of rear facet evaporation
2/ SiO
2Reflectance coating.Pressure welding more at last, be packaged into laser device.
The pattern of new device architecture that we propose the present invention with the equivalent refractive index method and common ridged GaN base laser has been carried out analog computation.And contrast, wherein:
For common ridged GaN base laser, when ridge width is 5 μ m, when etching depth was 0.75 μ m (keeping somewhere upper limiting layer thickness is 0.05 μ m), its guided wave mode that allows to exist comprised basic mode, First-Order Mode, second order mode, three rank moulds and quadravalence mould.When ridge width is 5 μ m, when etching depth was 0.6 μ m (keeping somewhere upper limiting layer thickness is 0.2 μ m), its guided wave mode that allows to exist comprised basic mode and First-Order Mode.When ridge width is 2 μ m, when etching depth was 0.75 μ m (keeping somewhere upper limiting layer thickness is 0.05 μ m), its guided wave mode that allows to exist comprised basic mode and First-Order Mode.
Laser for the ridged unsymmetric structure, when ridge width is 5 μ m, etching depth is 0.75 μ m (keeping somewhere upper limiting layer thickness is 0.05 μ m) on one side, it is that 4 μ m etching depths are when being the step of 0.6 μ m (keeping somewhere upper limiting layer thickness is 0.2 μ m) that another side increases a width, its guided wave mode that allows to exist has only basic mode, and other each high-rder mode is all ended.Because the common ridge width with basic mode work (about 2 μ m) of this laser bar width ratio wants big, under the identical situation of injected current density, can increase injection current, thereby the Output optical power of this laser will inevitably increase obviously.
Table 1 is the layers of material and the parameter of GaN base laser among the present invention.
Table 1
| Label | Title | Material | Thickness | |
| 43 | Ohmic electrode | Gold | 0.5μm | |
| 42 | Ohmic electrode | Gold | 0.5μm | |
| 41 | Insulating barrier | SiO 2 | 0.3 |
|
| 18 | Cover layer | GaN | 0.2μm | |
| 17 | Upper limiting layer | Al 0.08Ga 0.92N | 0.6 |
|
| 16 | Last ducting layer | GaN | 0.1μm | |
| 15 | Electronic barrier layer | Al 0.2Ga 0.8N | 20nm | |
| 14 | Active area | InGaN/ | 63nm | |
| 13 | Lower waveguide layer | GaN | 0.1μm | |
| 12 | Lower limit layer | Al 0.1Ga 0.9N | 0.8 |
|
| 11 | Ohmic contact | GaN | 5μm | |
| 10 | Substrate | Sapphire | 300μm |
Claims (6)
1, a kind of asymmetric ridge waveguide gallium nitride base semiconductor laser is characterized in that, comprising:
One substrate;
One ohmic contact layer, this ohmic contact layer is produced on the substrate;
One lower limit layer, this lower limit layer is produced on the ohmic contact layer, and the area of this lower limit layer is less than ohmic contact layer;
One lower waveguide layer, this lower waveguide layer is produced on the lower limit layer;
One active layer, this active layer is produced on the lower waveguide layer;
One electronic barrier layer, this electronic barrier layer is produced on the active layer;
Ducting layer on one, ducting layer is produced on the electronic barrier layer on this;
One upper limiting layer, this upper limiting layer is produced on the ducting layer, and this upper limiting layer is forming step-like structure away from N electrode one side after etching, and Shang Mian one deck area is more little, and only etches a breach in the side near the N electrode;
One cover layer, this cover layer be grown in upper limiting layer above, after the ridge structure etching finishes, have only on the part upper limiting layer of area minimum to keep cover layer;
One insulating barrier, this insulating barrier are produced on the part ohmic contact layer, on the part upper limiting layer, and lower limit layer, lower waveguide layer, active layer, electronic barrier layer, go up ducting layer, upper limiting layer and a tectal side;
One Ohmic electrode, this Ohmic electrode is produced on the ohmic contact layer;
One Ohmic electrode, this Ohmic electrode are produced on the insulating barrier on tectal upper surface and the part upper limiting layer and on the insulating barrier on cover layer one side.
2, asymmetric ridge waveguide gallium nitride base semiconductor laser according to claim 1 is characterized in that, wherein said substrate is a sapphire material.
3, asymmetric ridge waveguide gallium nitride base semiconductor laser according to claim 1, it is characterized in that wherein the height of the step-like structure that forms in a side of ridged of this upper limiting layer is that 0.1 μ m is that 3 μ m are to 5 μ m to 0.3 μ m, width behind over etching.
4, a kind of manufacture method of asymmetric ridge waveguide gallium nitride base semiconductor laser is characterized in that, comprises the steps:
(1) gets a substrate;
(2) make successively on the substrate growth ohmic contact layer, lower limit layer, lower waveguide layer, active layer, electronic barrier layer, on ducting layer, upper limiting layer and cover layer;
(3) etching is for the first time utilized two step alignments, with upper limiting layer in the described device architecture of step 2 and cover layer etching, makes a side form a breach, and opposite side forms step-like structure;
(4) etching for the second time will not have a side of step to etch into the ohmic contact layer place in the device architecture of step 3;
(5) make insulating barrier at part ohmic contact layer, part upper limiting layer upper surface, and lower limit layer, lower waveguide layer, active layer, electronic barrier layer, on ducting layer, upper limiting layer and a tectal side make insulating barrier;
(6) on ohmic contact layer, make Ohmic electrode;
(7) on the insulating barrier of tectal upper surface and part upper limiting layer upper surface and the insulating barrier on cover layer one side, make Ohmic electrode, finish the making of device.
5, the manufacture method of asymmetric ridge waveguide gallium nitride base semiconductor laser according to claim 4 is characterized in that, wherein said substrate is a sapphire material.
6, the manufacture method of asymmetric ridge waveguide gallium nitride base semiconductor laser according to claim 4, it is characterized in that wherein the height of the step-like structure that forms in a side of ridged of this upper limiting layer is that 0.1 μ m is that 3 μ m are to 5 μ m to 0.3 μ m, width behind over etching.
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| CN110021877B (en) * | 2018-01-10 | 2021-02-23 | 中国科学院苏州纳米技术与纳米仿生研究所 | Ridge waveguide semiconductor laser and preparation method thereof |
| CN110768098B (en) * | 2018-07-27 | 2021-08-27 | 山东华光光电子股份有限公司 | Preparation method of semiconductor laser with ridge structure and bonding wire pattern |
| CN111092366B (en) * | 2018-10-23 | 2021-04-06 | 山东华光光电子股份有限公司 | Semiconductor laser with double-sided current limiting structure and preparation method |
| CN111370992B (en) * | 2020-04-15 | 2023-03-24 | 深圳市利拓光电有限公司 | Power semiconductor laser with constant temperature control function and manufacturing method thereof |
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