CN100449717C - A making method for thermal sediment of GaAs single-chip microwave integration circuit power amplifier - Google Patents
A making method for thermal sediment of GaAs single-chip microwave integration circuit power amplifier Download PDFInfo
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- CN100449717C CN100449717C CNB2006101124083A CN200610112408A CN100449717C CN 100449717 C CN100449717 C CN 100449717C CN B2006101124083 A CNB2006101124083 A CN B2006101124083A CN 200610112408 A CN200610112408 A CN 200610112408A CN 100449717 C CN100449717 C CN 100449717C
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- ceramic substrate
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- power amplifier
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Abstract
The utility model discloses a manufacture method of heat sink of the GaAs MMIC power amplifier, comprising: A, a ceramic substrate surface and a substrate surface made of molybdenum matched with the size of a chip are made; B, holes are punched between an upper surface and a lower surface of the ceramic substrate surface; C, gold is plated on the upper surface and the lower surface of the punched ceramic substrate surface and the inner wall of the holes; D, the upper surface of the plated ceramic substrate surface is bonded with the lower surface of the substrate surface made of molybdenum; E, the chip is bonded with the upper surface of the substrate surface made of molybdenum; F, the lower surface of the substrate surface made of molybdenum is bonded a cavity, then the manufacture of the heat sink is completed. With the ceramic substrate surface and the substrate surface made of molybdenum, the utility model can avoid the fracture easily caused by bonding the chip to the ceramic substrate surface directly due to the different thermal expansion property of the two materials, solving the problems of the chip single-valve overburning caused by the bad heat conductivity of the GaAs chip and the heat dissipating not timely, so as to solve the adherence fracture of the GaAs chip and enhance the reliability of the chip.
Description
Technical field
The present invention relates to microelectronics power amplifier technical field of measurement and test, relate in particular to the manufacture method of a kind of GaAs single-chip microwave integration circuit (GaAs MMIC) power amplifier heat sink (heatsink).
Background technology
GaAs MMIC power amplifier is heat sink, mainly is to be used for heat radiation of GaAs MMIC power amplifier and ground connection.Transmit angle from heat, make heat sinkly by load onto heat-exchanging part on MMIC, this heat-exchanging part and MMIC have heat exchange contact, and pass this heat-exchanging part and make heat energy be communicated to cavity; From electrical point, it can play good earth, thus make mmic chip over the ground contact portion can not produce to crosstalk and influence the work of chip.
When GaAs MMIC power amplifier is worked, because heating repeatedly to GaAs chip and heat sink material, caloric value during the work of GaAs MMIC power amplifier is very big, and the heat-conductive characteristic of GaAs substrate is relatively poor, so chip is if want operate as normal just to require very high for chip and heat sink heat radiation.The performance of chip can reach design objective under the good situation of heat radiation, and if heat radiation extreme difference even imperfect earth all might cause burning of chip.And, under the bad situation of chip and heat sink heat radiation, if do not consider GaAs chip and heat sink thermal coefficient of expansion, GaAs chip attach phenomenon of rupture may take place also, and then influence the operate as normal of chip and even whole system.
Therefore, heat-conductive characteristic is good, and the heat sink operate as normal for GaAs MMIC power amplifier of on-deformable GaAs MMIC power amplifier is most important.
Existing GaAs MMIC power amplifier is heat sink mainly to be starched chip and direct bonding being made of general common metal (as copper or aluminium) cavity by silver.This method is not considered the problem that the coefficient of expansion of GaAs backing material and metal is different and cause, after the silver slurry is bonding, when GaAs backing material and metal are heated simultaneously, because its coefficient of expansion difference, unbalance stress very easily causes the fracture of GaAs MMIC, perhaps causes the bonding part of silver slurry displacement to occur and comes off, GaAsMMIC is burnt owing to ground connection being not good at causes heat, thereby influence systematic function.
In addition, along with the integrated level of power amplifier is more and more higher, unit area output is increasing, also proposes strict more requirement for the heat dissipation of chip, and the heat sink technology of ceramic substrate begins to be used gradually.
Though the heat sink technology of ceramic substrate can be effectively with the thermal energy conduction of chip to cavity, rapidly heat transferred is gone out by the heat dissipation such as fan of cavity bottom again, and because the more general PCB material height of dielectric constant of ceramic substrate, loss angle is little, is more suitable for the use of microwave power device.But, make the reliability of chip operation can not get guarantee owing in duplicate test repeatedly,, be easy to rupture between ceramic substrate and the GaAs chip because the thermal coefficient of expansion and the GaAs chip of binding material and ceramic substrate itself differ bigger problem.
Summary of the invention
(1) technical problem that will solve
In view of this, main purpose of the present invention is to provide a kind of GaAs MMIC power amplifier heat sink manufacture method, to solve GaAs chip attach phenomenon of rupture, improves chip reliability.
(2) technical scheme
For achieving the above object, technical scheme of the present invention is achieved in that
The heat sink manufacture method of a kind of GaAs single-chip microwave integration circuit GaAs MMIC power amplifier, this method comprises:
Ceramic substrate that A, making and chip size adapt and Mo substrate;
B, between the upper and lower surface of the ceramic substrate of making, punch;
C, gold-plated at the inwall in the upper and lower surface of ceramic substrate of punching and hole;
D, the lower surface of ceramic substrate upper surface after gold-plated and Mo substrate is bonding;
E, the upper surface of chip and Mo substrate is bonding;
F, the lower surface and the cavity of ceramic substrate is bonding finishes heat sink making.
Described steps A comprises: makes and the length of chip and wide identical, thickness ceramic substrate according to the calculating of chip operation frequency range, and the making Mo substrate all identical with thickness with the length and width of chip.
Described ceramic substrate is Al
2O
3Content perhaps is aluminium nitride ceramic substrate more than or equal to 99% ceramic substrate, and described Mo substrate is pure Mo substrate.
Described step B comprises: make a call to the through hole of a diameter more than or equal to 200 μ m between the upper and lower surface of the ceramic substrate of making.
Thickness gold-plated described in the step C is more than or equal to 34 μ m.
Bonding employing conducting resinl described in the step D, described step D comprises: the ceramic substrate upper surface after gold-plated applies one deck conducting resinl, and the lower surface and the ceramic substrate upper surface of Mo substrate is bonding, and toasts 2 hours down at 150 ℃.
Bonding employing conducting resinl described in the step e, described step e comprises: at upper surface coating one deck conducting resinl of Mo substrate that the upper surface of chip and Mo substrate is bonding, and under 150 ℃, toasted 2 hours.
With the lower surface and the bonding employing low temperature of the cavity scolding tin of ceramic substrate, described low temperature scolding tin working temperature is 139 ℃ described in the step F, and welding condition is to weld 30 seconds down at 160 ℃.
(3) beneficial effect
From technique scheme as can be seen, the present invention has following beneficial effect:
1, utilizes the present invention, owing to used ceramic substrate and Mo substrate, different heat expansion characteristic by two kinds of materials, avoided the phenomenon that direct bonding chip easily ruptures on ceramic substrate, it is poor to have solved GaAs chip heat-conductive characteristic, the problem that heat dissipation can not in time cause the chip single tube to burn, and then solved GaAs chip attach phenomenon of rupture, improved chip reliability.
2, the present invention uses the more general PCB material height of dielectric constant, loss angle is little, the ceramic material that is difficult for the use of deformation and suitable microwave high-frequency is as heat sink substrate, and utilize the temperature contrast of binding material, make the order gradient distribution of binding material serviceability temperature, avoid the generation of melting phenomenon once more, improved reliability.
3, the present invention utilizes the Mo thermal coefficient of expansion close with the GaAs chip, and the heat-conductive characteristic in the middle of GaAs chip and ceramic substrate characteristic has solved GaAs chip attach phenomenon of rupture, has improved chip reliability.
Description of drawings
Fig. 1 makes the realization flow figure of the heat sink overall technological scheme of GaAs MMIC power amplifier for the present invention;
Fig. 1-1 is the schematic diagram according to the ceramic substrate of overall technological scheme making of the present invention;
The schematic diagram of Fig. 1-2 on ceramic substrate, punching according to overall technological scheme of the present invention;
Fig. 1-3 is at the gold-plated schematic diagram of the inwall in ceramic substrate upper and lower surface and hole according to overall technological scheme of the present invention;
Fig. 1-4 is with ceramic substrate and the bonding schematic diagram of Mo substrate according to overall technological scheme of the present invention;
Fig. 1-5 is with chip and the bonding schematic diagram of Mo substrate according to overall technological scheme of the present invention;
Fig. 1-6 is with ceramic substrate and the bonding schematic diagram of cavity according to overall technological scheme of the present invention;
Fig. 2 makes the heat sink method flow diagram of GaAs MMIC power amplifier according to the embodiment of the invention;
Fig. 2-1 is the schematic diagram according to the ceramic substrate of embodiment of the invention making;
The schematic diagram of Fig. 2-2 on ceramic substrate, punching according to the embodiment of the invention;
Fig. 2-3 is at the gold-plated schematic diagram of the inwall in ceramic substrate upper and lower surface and hole according to the embodiment of the invention;
Fig. 2-4 is according to the schematic diagram of the embodiment of the invention at ceramic substrate upper surface coating electrically conductive glue;
Fig. 2-5 is with ceramic substrate and the bonding schematic diagram of Mo substrate according to the embodiment of the invention;
Fig. 2-6 is according to the schematic diagram of the embodiment of the invention at Mo substrate upper surface coating electrically conductive glue;
Fig. 2-7 is with chip and the bonding schematic diagram of Mo substrate according to the embodiment of the invention;
Fig. 2-8 is with ceramic substrate and the bonding schematic diagram of cavity according to the embodiment of the invention.
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
As shown in Figure 1, Fig. 1 makes the realization flow figure of the heat sink overall technological scheme of GaAs MMIC power amplifier for the present invention, and this method may further comprise the steps:
Step 11: make the ceramic substrate and the Mo substrate that adapt with chip size;
In this step, the ceramic substrate 101 of making as Figure 1-1, Fig. 1-1 is a schematic diagram of making ceramic substrate 101 according to overall technological scheme of the present invention.
Step 12: between the upper and lower surface of the ceramic substrate of making 101, punch 102;
Shown in Fig. 1-2, Fig. 1-2 is according to punch on ceramic substrate 102 schematic diagram of overall technological scheme of the present invention.
Step 13: at the upper and lower surface of the ceramic substrate 101 that punches and the inwall gold-plated 103 in hole;
As Figure 1-3, Fig. 1-3 is according to the schematic diagram of overall technological scheme of the present invention at the inwall in ceramic substrate upper and lower surface and hole gold-plated 103.
Step 14: the lower surface of 101 upper surfaces of the ceramic substrate after gold-plated and Mo substrate 104 is bonding;
Shown in Fig. 1-4, Fig. 1-4 is according to the overall technological scheme of the present invention schematic diagram that ceramic substrate 101 and Mo substrate 104 is bonding.
Step 15: chip 105 is bonding with the upper surface of Mo substrate 104;
Shown in Fig. 1-5, Fig. 1-5 is according to the overall technological scheme of the present invention schematic diagram that chip 105 and Mo substrate 104 is bonding.
Step 16: the lower surface and the cavity 106 of ceramic substrate 101 is bonding, finish heat sink making;
Shown in Fig. 1-6, Fig. 1-6 is according to the overall technological scheme of the present invention schematic diagram that ceramic substrate 101 and cavity 106 is bonding.
Realization flow figure based on the heat sink overall technological scheme of Fig. 1 described making GaAs MMIC power amplifier makes the heat sink method of GaAs MMIC power amplifier below in conjunction with specific embodiment to the present invention and further describes.
Embodiment
As shown in Figure 2, Fig. 2 makes the heat sink method flow diagram of GaAs MMIC power amplifier according to the embodiment of the invention, and this method may further comprise the steps:
Step 21: make and the length of chip and wide identical, thickness ceramic substrate according to the calculating of chip operation frequency range, and the making Mo substrate all identical with thickness with the length and width of chip;
Described ceramic substrate is Al
2O
3Content perhaps is aluminium nitride ceramic substrate more than or equal to 99% ceramic substrate; Described Mo substrate is pure Mo substrate;
In this step, the ceramic substrate 201 of making is shown in Fig. 2-1, and Fig. 2-1 is the schematic diagram according to the ceramic substrate 201 of embodiment of the invention making.
Step 22: between the upper and lower surface of the ceramic substrate of making 201, make a call to the through hole 202 of a diameter more than or equal to 200 μ m;
Shown in Fig. 2-2, the schematic diagram of Fig. 2-2 on ceramic substrate, punching according to the embodiment of the invention.
Step 23: plate the gold 203 of a layer thickness more than or equal to 34 μ m in the upper and lower surface of the ceramic substrate 201 that punches and the inwall in hole 202;
Shown in Fig. 2-3, Fig. 2-3 is at the gold-plated schematic diagram of the inwall in ceramic substrate upper and lower surface and hole according to the embodiment of the invention.
Step 24: the ceramic substrate 201 upper surfaces coating one deck working temperature after gold-plated is 139 ℃ a conducting resinl 204;
Shown in Fig. 2-4, Fig. 2-4 is according to the schematic diagram of the embodiment of the invention at ceramic substrate upper surface coating electrically conductive glue.
Step 25: the lower surface and ceramic substrate 201 upper surfaces of Mo substrate 205 are bonding, and under 150 ℃, toasted 2 hours.
Shown in Fig. 2-5, Fig. 2-5 is with ceramic substrate and the bonding schematic diagram of Mo substrate according to the embodiment of the invention.
Step 26: the conducting resinl 204 that in the upper surface of Mo substrate 205 coating one deck working temperature is 139 ℃;
Shown in Fig. 2-6, Fig. 2-6 is according to the schematic diagram of the embodiment of the invention at Mo substrate upper surface coating electrically conductive glue.
Step 27: chip 206 is bonding with the upper surface of Mo substrate 205, and under 150 ℃, toasted 2 hours;
Shown in Fig. 2-7, Fig. 2-7 is with chip and the bonding schematic diagram of Mo substrate according to the embodiment of the invention.
Step 28: adopt low temperature scolding tin bonding the lower surface and the cavity 207 of ceramic substrate 201, finish heat sink making;
Described low temperature scolding tin working temperature is 139 ℃, and welding condition is to weld 30 seconds down at 160 ℃;
Shown in Fig. 2-8, Fig. 2-8 is with ceramic substrate and the bonding schematic diagram of cavity according to the embodiment of the invention.
Above-described specific embodiment; purpose of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the above only is specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of being made, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (8)
1, the heat sink manufacture method of a kind of GaAs single-chip microwave integration circuit GaAs MMIC power amplifier is characterized in that this method comprises:
Ceramic substrate that A, making and chip size adapt and Mo substrate;
B, between the upper and lower surface of the ceramic substrate of making, punch;
C, gold-plated at the inwall in the upper and lower surface of ceramic substrate of punching and hole;
D, the lower surface of ceramic substrate upper surface after gold-plated and Mo substrate is bonding;
E, the upper surface of chip and Mo substrate is bonding;
F, the lower surface and the cavity of ceramic substrate is bonding finishes heat sink making.
2, the heat sink manufacture method of GaAs MMIC power amplifier according to claim 1 is characterized in that described steps A comprises:
Make and the length of chip and wide identical, thickness ceramic substrate according to the calculating of chip operation frequency range, and the making Mo substrate all identical with thickness with the length and width of chip.
3, the heat sink manufacture method of GaAs MMIC power amplifier according to claim 2 is characterized in that described ceramic substrate is Al
2O
3Content perhaps is aluminium nitride ceramic substrate more than or equal to 99% ceramic substrate, and described Mo substrate is pure Mo substrate.
4, the heat sink manufacture method of GaAs MMIC power amplifier according to claim 1 is characterized in that described step B comprises:
Between the upper and lower surface of the ceramic substrate of making, make a call to the through hole of a diameter more than or equal to 200 μ m.
5, the heat sink manufacture method of GaAs MMIC power amplifier according to claim 1 is characterized in that, thickness gold-plated described in the step C is more than or equal to 34 μ m.
6, the heat sink manufacture method of GaAs MMIC power amplifier according to claim 1 is characterized in that, bonding employing conducting resinl described in the step D, and described step D comprises:
Ceramic substrate upper surface after gold-plated applies one deck conducting resinl, and the lower surface and the ceramic substrate upper surface of Mo substrate is bonding, and toasts 2 hours down at 150 ℃.
7, the heat sink manufacture method of GaAs MMIC power amplifier according to claim 1 is characterized in that, bonding employing conducting resinl described in the step e, and described step e comprises:
At upper surface coating one deck conducting resinl of Mo substrate, the upper surface of chip and Mo substrate is bonding, and under 150 ℃, toasted 2 hours.
8, the heat sink manufacture method of GaAs MMIC power amplifier according to claim 1, it is characterized in that, with the lower surface and the bonding employing low temperature of the cavity scolding tin of ceramic substrate, described low temperature scolding tin working temperature is 139 ℃ described in the step F, and welding condition is to weld 30 seconds down at 160 ℃.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006101124083A CN100449717C (en) | 2006-08-16 | 2006-08-16 | A making method for thermal sediment of GaAs single-chip microwave integration circuit power amplifier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006101124083A CN100449717C (en) | 2006-08-16 | 2006-08-16 | A making method for thermal sediment of GaAs single-chip microwave integration circuit power amplifier |
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| Publication Number | Publication Date |
|---|---|
| CN101127309A CN101127309A (en) | 2008-02-20 |
| CN100449717C true CN100449717C (en) | 2009-01-07 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2006101124083A Expired - Fee Related CN100449717C (en) | 2006-08-16 | 2006-08-16 | A making method for thermal sediment of GaAs single-chip microwave integration circuit power amplifier |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103025130A (en) * | 2012-12-06 | 2013-04-03 | 赵建光 | Integrated multifunctional alumina ceramic electronic refrigeration radiator and production method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5256902A (en) * | 1991-08-14 | 1993-10-26 | Vlsi Technology, Inc. | Metal heatsink attach system |
| JP2001313355A (en) * | 2000-05-01 | 2001-11-09 | Denki Kagaku Kogyo Kk | Module and method of manufacture |
| CN1700538A (en) * | 2004-05-20 | 2005-11-23 | 中国科学院半导体研究所 | Heat sink having inclined plane structure for semiconductor optical amplifier packaging |
-
2006
- 2006-08-16 CN CNB2006101124083A patent/CN100449717C/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5256902A (en) * | 1991-08-14 | 1993-10-26 | Vlsi Technology, Inc. | Metal heatsink attach system |
| JP2001313355A (en) * | 2000-05-01 | 2001-11-09 | Denki Kagaku Kogyo Kk | Module and method of manufacture |
| CN1700538A (en) * | 2004-05-20 | 2005-11-23 | 中国科学院半导体研究所 | Heat sink having inclined plane structure for semiconductor optical amplifier packaging |
Non-Patent Citations (1)
| Title |
|---|
| 新型热沉用复合金属材料. 徐卓辉，王海平等.电力电子技术，第3期. 2000 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103025130A (en) * | 2012-12-06 | 2013-04-03 | 赵建光 | Integrated multifunctional alumina ceramic electronic refrigeration radiator and production method thereof |
| CN103025130B (en) * | 2012-12-06 | 2015-04-01 | 南京中江新材料科技有限公司 | Integrated multifunctional alumina ceramic electronic refrigeration radiator and production method thereof |
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| Publication number | Publication date |
|---|---|
| CN101127309A (en) | 2008-02-20 |
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Owner name: SHENYANG ZHONGKE MICROELECTRONICS CO., LTD. Effective date: 20110824 |
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Free format text: CORRECT: ADDRESS; FROM: 100029 CHAOYANG, BEIJING TO: 110179 SHENYANG, LIAONING PROVINCE |
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Effective date of registration: 20110824 Address after: Hunnan New Century Road 110179 Shenyang city of Liaoning province No. 15 Torch Innovation Park podium 0621-06260635-0638 Patentee after: Deyang Zhongke Microelectronics Co., Ltd. Address before: 100029 Beijing city Chaoyang District Beitucheng West Road No. 3 Patentee before: Institute of Microelectronics, Chinese Academy of Sciences |
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