CN100446722C - Intelligent clothing based on MEMS and its making method - Google Patents
Intelligent clothing based on MEMS and its making method Download PDFInfo
- Publication number
- CN100446722C CN100446722C CNB2006101256006A CN200610125600A CN100446722C CN 100446722 C CN100446722 C CN 100446722C CN B2006101256006 A CNB2006101256006 A CN B2006101256006A CN 200610125600 A CN200610125600 A CN 200610125600A CN 100446722 C CN100446722 C CN 100446722C
- Authority
- CN
- China
- Prior art keywords
- sound
- cantilever beam
- sensor array
- pad
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Measuring Pulse, Heart Rate, Blood Pressure Or Blood Flow (AREA)
Abstract
An intelligent clothing based on MEMS technique for acquiring human physiological parameters including cardioelectric signals and cardiac sound features the integration of a flexible film containing sensor array with fabric. Its preparing process includes such steps as using MEMS technique to prepare sound/electricity transducers and electric interconnection on a wafer, etching to generate Si-island pattern on the back of wafer, coating polymer on both surfaces of wafer, photoetching to form sensor windows and sewing holes on a film, and integrating it with fabric by sewing.
Description
Technical field
The present invention relates to the MEMS technical field, be specifically related to a kind of measure human body physiological parameter based on intelligent clothing of MEMS and preparation method thereof.
Background technology
Since Einthoven in 1903 uses string of a musical instrument type galvanometer, trace electrocardiogram on the sensitive film from human body first, medical circle is devoted to gather the various physiological parameters of human body and is placed on record, carries out assessment and diagnosis more detailed, system with this state of an illness to patient.Yet, in most cases, need the special various complexity of personnel operation and expensive equipment is checked patient, like this patient or medical institutions are brought a lot of unnecessary troubles, and, also be difficult to accomplish 24 hours tracing and monitoring of whole day to patient's state of an illness.Therefore, the healthcare givers presses for the ability that can realize the unmanned continuous monitoring patient state of an illness.Finland POLAR ELECTRO OY company releases a kind of pick off that can continuously monitoring human body heart heart rate, the pick off of strip is bundled in chest, calculate the heart heart rate by surveying human ecg signal, so, the time has been grown and has made that the wearer is difficult to stand.Massachusetts Institute Technology's Media Lab proposed a kind of " dress ornament that can wash, computing capability is arranged " first in 1997, it be conductive fiber according to the embroidery of the circuit diagram that designs on textile as the electrical interconnection circuit, realize some simple computing functions.Propose a kind of electronics dress ornament that is integrated with microphone array from the research group of Virginia engineering college, they have successfully used sewing machine that the single-chip microcomputer of mike, hull cell and low-power consumption is sewn on the textile.On this basis, the upright university of North Carolina, USA develops a kind of electronics dress ornament that can detect sound source: they are sewn to mike on the textile with conductive fiber, mike is evenly distributed in and forms microphone array on the textile, wear sound that the personnel of this electronics dress ornament can start shot, tank even accurately locate, extremely important meaning is militarily arranged as the position of rapid moving objects such as aircraft.
Above-mentioned the whole bag of tricks is easy to realize the integration of electronic device and textile, but their shortcoming also is conspicuous: at first, and in use, along with the continuous buckle fold of textile, the interconnected reliability of textile and various electronic device is difficult to be guaranteed; Secondly, in order not influence the textile wearing comfortableness, integrated electronic device quantity will be subjected to great restriction, and its function also is and is limited so.
Summary of the invention
The objective of the invention is to overcome the deficiency of above-mentioned technology, a kind of intelligent clothing based on MEMS is provided, this intelligent clothing can realize not influencing when pick off and textile are integrated in one well its wearing comfortableness; The present invention also provides the preparation method of this intelligent clothing.
A kind of intelligent clothing provided by the invention based on MEMS, this intelligent clothing is provided with the flexible sensor array, this flexible sensor array comprises flexible substrate, several silicon island harmony/electric transducers, flexible substrate is divided into flexible substrate and following flexible substrate, silicon island harmony/electric transducer is the array distribution and is arranged between flexible substrate and the following flexible substrate, the silicon island is realized electrical interconnection with sound/electric transducer by metallic circuit, be provided with the sewing hole around each silicon island harmony/electric transducer, conductive fiber passes the sewing hole flexible sensor array and textile is sutured in one; The structure of silicon island is: have pad on the silicon base, the lead-out wire of pad links to each other with an end of metallic circuit, and some glue has conducting resinl between conductive fiber and the pad; The structure of sound/electric transducer is: silicon base is provided with cavity, be provided with cantilever beam above the cavity, cantilever beam constitutes by following thin layer is stacked successively: supporting layer, bonding material layer, bottom electrode, sound/electric transductive material layer, sound-absorbing material layer and top electrode, wherein, bottom electrode and top electrode constitute metallic circuit.
The method for preparing above-mentioned intelligent clothing, its step comprises:
(1), use silicon nitride as mask, wafer is carried out the sacrifice layer that cantilever beam is made in selective oxidation;
(2), use sol-gel process at the area deposition lead titanate-zirconate of cantilever beam near stiff end;
(3), at the sound-absorbing material of cantilever beam top sputter one deck nichrome as sound/electric transducer;
(4), the polyimides that is spin-coated on the wafer is carried out graphically, make the flexible sensor array film expose cantilever beam window, pad and sewing hole by photoetching;
(5), use conductive fiber that flexible sensor array film and textile are sewed up;
(6), conductive fiber is during through the silicon island pad, uses conducting resinl that conductive fiber and pad bonding are drawn signal that pick off produces for the external circuit processing.
The present invention has adopted the MEMS/ICs technology to produce pick off on wafer, adopt a kind of flexible sensor array film of the sandwich structure that clips by two layers of polyimide, adopted the electrical equipment interconnect circuit of conductive fiber as sensor array, adopted the binding material of the electrode pad that conducting resinl draws as conductive fiber and sensor signal, all realize flexibility, enlarge the integrated level of intelligent clothing, improved the reliability of intelligent clothing, increased the intelligent clothing wearing comfortableness.In addition, because some glue has conducting resinl on the silicon island pad of producing, it contacts with torso model, the ultra-weak electronic signal that produces in the time of can detecting heartbeat.Therefore, electrocardiosignal can be drawn out to treatment circuit and can obtain electrocardiogram, can with phonocardiogram comprehensive with come together to analyze, the diagnosis state of an illness.
Description of drawings
Fig. 1 is the structure chart that flexible sensor array film and textile are integrated.
Fig. 2 is the A-A cross section enlarged drawing of Fig. 1.
Fig. 3 is a kind of topology example figure of example, and wherein (a) is front view, (b) is vertical view.
Fig. 4 is the process chart of Fig. 3 example.
The sensor voltage output frequency response curve that Fig. 5 obtains for Fig. 4 example numerical simulation.
The specific embodiment
The present invention is based on the MEMS/ICs technology, divided for three steps on wafer, produced the flexible sensor array film that can be integrated in one: at first, producing the pick off that is used on the intelligent clothing on the wafer with textile; Secondly, sensor arrayization, flexibility with the first step is produced become the flexible sensor array film; At last, flexible sensor array film and the textile that second step was produced is integrated in one.
Pick off on the intelligent clothing is for measuring the sound/electric transducer of human body cardiechema signals, this pick off adopts and piles up shape MULTILAYER COMPOSITE cantilever membrane structure, promptly be to form the agglutinating cantilever beam that piles up by the elastic construction layer, cantilever beam structures is piled up by supporting layer, tack coat, hearth electrode, piezoelectric membrane, extra play, top electrode respectively from bottom to top and is formed.By pick off being applied the sound pressure signal of different frequency, cantilever beam produces the vibration along thickness direction immediately, and the piezoelectric membrane that is stacked on the cantilever beam produces distortion, forms direct piezoelectric effect, produce voltage signal, process hearth electrode and top electrode are drawn out to outer treatment circuit and handle.Cantilever beam thin film one end is fixed, an other end and both sides freedom, the cantilever beam film length is 1/4 of a vibration wavelength, and therefore the first resonant frequency opposite end is fixing and fixed low all around, and the cardiechema signals that is distributed in low-frequency range for measuring frequency has very big advantage more.Supporting layer in the described piezoelectric cantilever stacks of thin films structure is that LPCVD is deposited on the low stress nitride silicon thin film on the wafer, and its chemical stability is good, and mechanical property is outstanding.Tack coat in the piezoelectric cantilever stacks of thin films structure is the titanium of magnetron sputtering on silicon nitride film, and its fusing point height can stand follow-up high-temperature technology; Its chemical property shows as oxidized easily, must be protected; Its caking property is good, can realize well bonding of the hearth electrode metal of silicon nitride film in subsequent technique.Hearth electrode in the piezoelectric cantilever stacks of thin films structure is the platinum of magnetron sputtering on the titanium thin film, and its fusing point height, chemical property are stablized, and can stand follow-up high-temperature technology; Its ohm property is good, can be used for the signal extraction electrode.Piezoelectric membrane in the piezoelectric cantilever stacks of thin films structure is that the use sol-gel process is deposited on the lead zirconate titanate (PZT) on the hearth electrode, and its piezoelectric modulus, relative dielectric constant height can be used as sound/electric transductive material; Its Curie temperature height can stand polymer cure technology in the subsequent sensor flexibility technology.Often deposit one deck lead titanates (PT) thin film in advance before the piezoelectric film deposition technology in the piezoelectric cantilever stacks of thin films structure, the temperature when being used to reduce the PZT sintered ceramic, and reduce the infiltration of atom between PZT and the hearth electrode.Extra play in the described piezoelectric cantilever stacks of thin films structure sheaf is the nichrome of magnetron sputtering on pzt thin film, and its sound absorbing capabilities is outstanding, improves the sensitivity of transducer.Top electrode in the piezoelectric cantilever stacks of thin films structure is the gold of magnetron sputtering on chrome-nickel alloy thin film, and its fusing point height, chemical property are stablized, and can stand follow-up high-temperature technology; Its ohm property is good, can be used for the signal extraction electrode.Piezoelectric cantilever stacks of thin films structure is respectively Si from bottom to top
3N
4/ Ti/Pt/PZT/Ni-Cr/Au.
The flexible sensor array is silicon island and sound/electric transducer array (as 8 * 8 arrays), adopts deep ion reactive ion etching technology (DRIE) to etch the silicon island pattern at the reverse side of the wafer that is manufactured with the sensor; One deck of wafer frontside spin coating is provided with the polyimides of pad and cantilever beam graphical window; One deck polyimides of wafer reverse side spin coating, two layers of polyimide is with the sensor array formation sandwich structure that is clipped in the middle.
Open on the flexible sensor array film that the sewing hole is arranged one, adopt photoetching technique on above-mentioned flexible sensor array film, graphically to expose the sewing hole; As the conductive fiber of electrical interconnection circuit, above-mentioned flexible sensor array film and textile are sutured in one, promptly obtain having the intelligent clothing of gathering human body heart sound information ability.
The present invention will be further described in detail below in conjunction with example and accompanying drawing.
As shown in Figure 1, the structure of flexible sensor array is: flexible substrate 1 is divided into flexible substrate 1a and following flexible substrate 1b, between flexible substrate 1a and following flexible substrate 1b, be distributed with the silicon island 2 harmony/electric transducer 3 of array, the position of flexible substrate 1a is silicon island 2 on conductive fiber 6 processes, all the other positions are sound/electric transducer 3, silicon island 2 is realized electrical interconnection with sound/electric transducer 3 by metallic circuit 5, silicon island 2, sound/electric transducer 3, on each silicon island 2 or the sound/electric transducer 3, down, a left side, part on the right side be not provided with one the sewing hole 4 so that the flexible sensor array film can with textile combination more closely.Conductive fiber 6 passes sewing hole 4 flexible sensor array film and textile 8 is sutured in one.Silicon island 2 harmony/electric transducer 3 and the sewing hole 4 flexible substrate 1 on journey array distributing.
As shown in Figure 2, the structure of silicon island 2 is: silicon base 19 is provided with pad 9, and the lead-out wire of pad 9 links to each other with an end of metallic circuit 5, realizes the electrical interconnection of silicon island 2 and sound/electric transducer 3.During conductive fiber 6 process pads 9, its upper point glue has conducting resinl 7, realizes the electrical interconnection of flexible sensor array film and outer treatment circuit.
As shown in Figure 3, the structure of sound/electric transducer 3 is: have cavity 10 on the silicon base 18, be provided with cantilever beam 11 above the cavity 10, one side cantilever beam 11 be fixed on silicon base 18, other three limit is suspended on the cavity 10.Cantilever beam 11 constitutes by following thin layer is stacked successively: supporting layer 12, bonding material layer 13, bottom electrode 14, sound/electric transductive material layer 15, sound-absorbing material layer 16 and top electrode 17, wherein, bottom electrode 14 and top electrode 17 constitute metallic circuit 5.For reaching better technique effect, supporting layer 12 is selected Si for use
3N
4, bonding material layer 13 is selected Ti for use, and sound/electric transductive material layer 15 is selected PZT for use, and sound-absorbing material layer 16 is selected Ni-Cr for use, and bottom electrode 14 is selected Pt for use, and top electrode 17 is selected Au for use.
Below be described further by the processing technology flow process of example the flexible sensor array film.
As shown in Figure 4, the processing technology flow process starts from a: prepare a slice two-sided process polishing and use LPCVD to deposit four inches wafers of 0.5 μ m low stress nitride silicon thin film.B: after the silicon nitride of wafer frontside carried out photolithography patterning, use RIE to etch the dark cavity of 1.2 μ m.C: the wafer of handling through b is carried out selective oxidation (LOCOS), filled the silicon dioxide of about 2.2 μ m in the cavity, often growing than silicon nitride floor height through the silicon dioxide after the oxidation of c portion, generally needing a step flatening process that its raised area is removed.D: on the wafer behind the flatening process, use LPCVD to deposit the support layer material of the silicon nitride film of 1.2 μ m as cantilever beam.E: use the titanium of liftoff technology difference sputter one deck 0.18 μ m on silicon nitride and the platinum of 0.02 μ m, the effect of Titanium is as binding material platinum and silicon nitride to be bondd, the resistivity of metal platinum is low, chemical property stable, as the hearth electrode material of transducer.F: use sol-gel process PZT colloidal sol in spin coating on the hearth electrode, be heated to 200 ℃ of organic solvent evaporations and fall to obtain gel colloidal sol, and be heated to 400 ℃ and carry out pretreatment, the thickness of gel is relevant with the rotating speed that revolves the glue machine with the viscosity of colloidal sol, usually the colloidal sol that configures 0.5mol/L is spin-coated on the wafer that rotating speed is 4000rpm, obtain the PZT gel of desired thickness through multiple spin coating, continuation on wafer spin coating PZT colloidal sol until the thickness that obtains needing, as for being heated to 650 ℃ in the electromagnetic oven PZT gel sintered wafer into piezoelectric ceramics, use HF/HCl and buffer agent that PZT is carried out graphically then.G: use the nichrome of liftoff technology difference sputter one deck 0.012 μ m on wafer and the gold of 0.05 μ m, wherein nichrome covers respectively on supporting layer and the PZT as sound-absorbing material, the resistivity of gold is low, chemical property stable, as the top electrode material of transducer.H: the wafer frontside litho pattern is dissolved the cantilever beam figure, use the RIE etch silicon nitride to obtain the slit, edge that the wide cantilever beam of 20 μ m freely becomes.I: expose cantilever beam structures at positive spin coating one deck polyamic acid of wafer and to its photolithography patterning, its thickness is with the concentration of polyamic acid and to revolve the rotating speed of glue machine relevant, usually configuring 20% polyamic acid is spin-coated on the wafer that rotating speed is 4000rpm, obtain the thin film of about 25 μ m, as for being heated to 80 ℃ and be incubated 30min, 170 ℃ and be incubated 30min, 2702 and be incubated 120min respectively with the programming rate of 0.5 ℃/min in the electromagnetic oven, natural cooling is solidified into polyimides then with wafer.J: the silicon nitride to the wafer reverse side carries out photolithography patterning, uses DRIE to etch the silicon island figure, with the method for i in wafer reverse side spin-on polyimide and to its curing.K: the silicon island array that j is obtained places HF to remove the silicon dioxide of cavity, discharges cantilever design.The flexible silicon island array that obtains is placed the electric field of 20kv/cm, make PZT along thickness direction polarization sound/electric transducer transducer arrays.
Provide an instantiation according to above-mentioned embodiment:
Shown in Figure 5: abscissa is the frequency of load, and vertical coordinate is the voltage of transducer output.The supporting layer of sound/electric transducer is a silicon nitride, and its length is respectively 400 * 70 * 1 μ m
3, the transductive material of sound/electric transducer is PZT, its length is respectively 100 * 70 * 1 μ m
3, transducer is placed the sound field of 40db, use the common finite element analysis software that it is carried out numerical simulation, obtain the frequency response curve of its output voltage.As can be seen from the figure, the response curve of transducer is in low-frequency range, and curve ratio is milder, along with the rising of frequency in slow rising, reach peak during to first resonant frequency, descend slowly subsequently.When transducer being used for measure the human body phonocardiogram on the intelligent clothing, can adopt low pass filter that high-frequency signal is filtered, the cardiechema signals that obtains 0-1000Hz is analyzed, is diagnosed for the clinicist.
Claims (3)
1, a kind of intelligent clothing based on MEMS, it is characterized in that: this intelligent clothing is provided with the flexible sensor array, this flexible sensor array comprises flexible substrate (1), several silicon island (2) harmony/electric transducers (3), flexible substrate (1) is divided into flexible substrate (1a) and following flexible substrate (1b), silicon island (2) harmony/electric transducer (3) is the array distribution and is arranged between flexible substrate (1a) and the following flexible substrate (1b), silicon island (2) is realized electrical interconnection with sound/electric transducer (3) by metallic circuit (5), be provided with sewing hole (4) around each silicon island (2) harmony/electric transducer (3), conductive fiber (6) passes sewing hole (4) flexible sensor array and textile (8) is sutured in one;
The structure of silicon island (2) is: silicon base (19) is provided with pad (9), and the lead-out wire of pad (9) links to each other with an end of metallic circuit (5), and some glue has conducting resinl (7) between conductive fiber (6) and the pad (9);
The structure of sound/electric transducer (3) is: have cavity (10) on the silicon base (18), be provided with cantilever beam (11) above the cavity (10), cantilever beam (11) constitutes by following thin layer is stacked successively: supporting layer (12), bonding material layer (13), bottom electrode (14), sound/electric transductive material layer (15), sound-absorbing material layer (16) and top electrode (17), wherein, bottom electrode (14) and top electrode (17) constitute metallic circuit (5).
2, intelligent clothing according to claim 1 is characterized in that: supporting layer (12) material is Si
3N
4, binding material layer material (13) is Ti, and sound/electric transductive material layer (15) material is a lead titanate-zirconate, and sound-absorbing material layer (16) material is Ni-Cr, and bottom electrode (14) material is Pt, top electrode (17) material is Au.
3, a kind of method for preparing the described intelligent clothing of claim 2, its step comprises:
(1), use silicon nitride as mask, wafer is carried out the sacrifice layer that cantilever beam is made in selective oxidation;
(2), use sol-gel process at the area deposition lead titanate-zirconate of cantilever beam near stiff end;
(3), at the sound-absorbing material of cantilever beam top sputter one deck nichrome as sound/electric transducer;
(4), the polyimides that is spin-coated on the wafer is carried out graphically, make the flexible sensor array film expose cantilever beam window, pad and sewing hole by photoetching;
(5), use conductive fiber that flexible sensor array film and textile are sewed up;
(6), conductive fiber is during through the silicon island pad, uses conducting resinl that conductive fiber and pad bonding are drawn signal that pick off produces for the external circuit processing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006101256006A CN100446722C (en) | 2006-12-25 | 2006-12-25 | Intelligent clothing based on MEMS and its making method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006101256006A CN100446722C (en) | 2006-12-25 | 2006-12-25 | Intelligent clothing based on MEMS and its making method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN100998501A CN100998501A (en) | 2007-07-18 |
| CN100446722C true CN100446722C (en) | 2008-12-31 |
Family
ID=38257378
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2006101256006A Active CN100446722C (en) | 2006-12-25 | 2006-12-25 | Intelligent clothing based on MEMS and its making method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100446722C (en) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9420964B2 (en) | 2009-03-25 | 2016-08-23 | Sumitomo Electric Industries, Ltd. | Optical fiber sheet and body motion sensor |
| CN102755151A (en) * | 2011-04-27 | 2012-10-31 | 深圳市迈迪加科技发展有限公司 | Heart function monitoring method |
| CN102652582A (en) * | 2011-11-01 | 2012-09-05 | 谭俊峰 | Bluetooth music clothes |
| CN103968886A (en) * | 2013-02-04 | 2014-08-06 | 刘胜 | Multi-degree-of-freedom microsensor module and packaging modes thereof |
| CN106293280B (en) * | 2015-06-02 | 2023-10-24 | 安徽精卓光显技术有限责任公司 | Touch display device and pressure touch unit |
| CN104905422A (en) * | 2015-07-14 | 2015-09-16 | 爱谱诗（苏州）服装有限公司 | T shirt with monitoring function |
| DE102015014256B4 (en) | 2015-11-05 | 2020-06-18 | Airbus Defence and Space GmbH | Microelectronic module for cleaning a surface, modular array and method for cleaning a surface |
| CN106370325A (en) * | 2016-11-07 | 2017-02-01 | 东北农业大学 | Working seat body pressure distribution test sensor |
| CN108251779A (en) * | 2018-01-08 | 2018-07-06 | 东莞市联洲知识产权运营管理有限公司 | A kind of metal coating modified high-strength conductive spinning product based on plasma spraying technology |
| DE102018102734A1 (en) * | 2018-01-18 | 2019-07-18 | Schreiner Group Gmbh & Co. Kg | Flexible electrical circuit with connection between electrically conductive structural elements |
| CN109091135B (en) * | 2018-07-17 | 2021-09-14 | 中北大学 | MEMS technology-based miniature in-situ synchronous heart sound and electrocardiogram detection sensor |
| CN110341208B (en) * | 2019-07-12 | 2021-03-30 | 哈尔滨工业大学（威海） | Soft sensor integration method for manufacturing mold by using soft sensor carrier and sensing garment |
| CN110974249B (en) * | 2019-12-13 | 2021-06-29 | 华中科技大学 | Epidermis attaching type blood oxygen saturation detection system and preparation thereof |
| CN111884647B (en) * | 2020-08-13 | 2023-09-29 | 中国工程物理研究院电子工程研究所 | Coupling isolation method for piezoelectric micromechanical acoustic transducer array |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1486376A (en) * | 2000-11-14 | 2004-03-31 | �����ǿƼ��о���˾ | Full-fashioned garment with sleeves having intelligence capability |
| CN1619259A (en) * | 2004-12-06 | 2005-05-25 | 华中科技大学 | Manufacturing method of flexible sensor |
| WO2005089645A1 (en) * | 2004-03-24 | 2005-09-29 | Dainippon Sumitomo Pharma Co., Ltd. | Biological information measuring garment having sensor, biological information measuring system and equipment, and control method of equipment |
| WO2006000345A2 (en) * | 2004-06-23 | 2006-01-05 | Ditf Deutsche Institute Für Textil- Und Faserforschung | Article of clothing with an integrated sensor system |
| CN1795815A (en) * | 2004-12-28 | 2006-07-05 | 博能电子公司 | Sensor system, garment and heart rate monitor |
| CN1286046C (en) * | 2002-12-30 | 2006-11-22 | 中国科学院理化技术研究所 | Digitizing system for human bod yinformation collection and analyzing process |
| CN1875895A (en) * | 2006-04-19 | 2006-12-13 | 华中科技大学 | A flexible retina chip and preparation method thereof |
| CN1882280A (en) * | 2003-05-19 | 2006-12-20 | 智能生活技术有限公司 | Knitted transducer devices |
| CN201018960Y (en) * | 2007-04-13 | 2008-02-13 | 华中科技大学 | Intelligent clothing based on MEMS |
-
2006
- 2006-12-25 CN CNB2006101256006A patent/CN100446722C/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1486376A (en) * | 2000-11-14 | 2004-03-31 | �����ǿƼ��о���˾ | Full-fashioned garment with sleeves having intelligence capability |
| CN1286046C (en) * | 2002-12-30 | 2006-11-22 | 中国科学院理化技术研究所 | Digitizing system for human bod yinformation collection and analyzing process |
| CN1882280A (en) * | 2003-05-19 | 2006-12-20 | 智能生活技术有限公司 | Knitted transducer devices |
| WO2005089645A1 (en) * | 2004-03-24 | 2005-09-29 | Dainippon Sumitomo Pharma Co., Ltd. | Biological information measuring garment having sensor, biological information measuring system and equipment, and control method of equipment |
| WO2006000345A2 (en) * | 2004-06-23 | 2006-01-05 | Ditf Deutsche Institute Für Textil- Und Faserforschung | Article of clothing with an integrated sensor system |
| CN1619259A (en) * | 2004-12-06 | 2005-05-25 | 华中科技大学 | Manufacturing method of flexible sensor |
| CN1795815A (en) * | 2004-12-28 | 2006-07-05 | 博能电子公司 | Sensor system, garment and heart rate monitor |
| CN1875895A (en) * | 2006-04-19 | 2006-12-13 | 华中科技大学 | A flexible retina chip and preparation method thereof |
| CN201018960Y (en) * | 2007-04-13 | 2008-02-13 | 华中科技大学 | Intelligent clothing based on MEMS |
Non-Patent Citations (2)
| Title |
|---|
| MEMS封装技术及标准工艺研究. 关荣锋，汪学方，甘志银等.半导体技术，第30卷第1期. 2005 |
| MEMS封装技术及标准工艺研究. 关荣锋，汪学方，甘志银等. 半导体技术，第30卷第1期. 2005 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100998501A (en) | 2007-07-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN100446722C (en) | Intelligent clothing based on MEMS and its making method | |
| CN201018960Y (en) | Intelligent clothing based on MEMS | |
| US10895510B2 (en) | Core-shell nanofiber textiles for strain sensing, and methods of their manufacture | |
| KR101877108B1 (en) | Electronic skin, preparation method and use thereof | |
| Wang et al. | Biomedical sensors and measurement | |
| US20080312524A1 (en) | Medical Sensor Having Electrodes and a Motion Sensor | |
| WO2017127530A1 (en) | Wireless monitoring system | |
| CN108429482B (en) | Friction nanometer power generator, micro-mechanic sensor and sensor-based system | |
| CN107137085B (en) | A kind of flexible surface acoustic wave sensor of respiratory state detection method and wireless and passive | |
| CN111006801A (en) | Flexible variable-mode sensor for physiological information monitoring, application and preparation method | |
| Qu et al. | Monitoring of physiological sounds with wearable device based on piezoelectric MEMS acoustic sensor | |
| CN107041751A (en) | A kind of surface acoustic wave sensor of breathing state detecting system and wireless and passive | |
| CN109091135A (en) | The miniature in-situ synchronization detection sensor of heart sound electrocardio based on MEMS technology | |
| Hu et al. | A triangular wavy substrate-integrated wearable and flexible piezoelectric sensor for a linear pressure measurement and application in human health monitoring | |
| Neves et al. | Development of modular multifunctional probe arrays for cerebral applications | |
| JP2003524461A (en) | Low profile acoustic sensor array, sensor with pleated transmission line, and related methods | |
| Qu et al. | Heart sound monitoring based on a piezoelectric mems acoustic sensor | |
| CA2848430A1 (en) | Coreshell nanofiber textiles for strain sensing, and methods of their manufacture | |
| CN112857435A (en) | Flexible graphene pressure and temperature composite sensor | |
| CN111956218A (en) | Flexible brain electrode with electrochemical and electrophysiological detection functions and preparation method thereof | |
| Zhang et al. | Design of a flexible stethoscope sensor skin based on MEMS technology | |
| CN208659397U (en) | Heart and lung sounds acquisition device | |
| Harimurti et al. | Wearable and flexible devices for cuff-less blood pressure estimation and monitoring: a review | |
| Chuo et al. | Sensor layer of a multiparameter single-point integrated system | |
| KR101593684B1 (en) | Personal authentication device and method using film-type bio-signal measurement device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |