CN103968886A - Multi-degree-of-freedom microsensor module and packaging modes thereof - Google Patents
Multi-degree-of-freedom microsensor module and packaging modes thereof Download PDFInfo
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- CN103968886A CN103968886A CN201310044773.5A CN201310044773A CN103968886A CN 103968886 A CN103968886 A CN 103968886A CN 201310044773 A CN201310044773 A CN 201310044773A CN 103968886 A CN103968886 A CN 103968886A
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Abstract
Disclosed are a multi-degree-of-freedom microsensor module and packaging modes thereof. The multi-degree-of-freedom microsensor module comprises a multi-degree-of-freedom MEMS (micro-electro mechanical system) acceleration meter, a multi-degree-of-freedom MEMS gyroscope, a multi-degree-of-freedom MEMS magnetic sensor, an MEMS pressure sensor, a GPS (global positioning system)/Beidou navigation satellite system chip and an ASIC (application specific integrated circuit). The multi-degree-of-freedom microsensor module is characterized in that the multi-degree-of-freedom MEMS (micro-electro mechanical system) acceleration meter, the multi-degree-of-freedom MEMS gyroscope, the multi-degree-of-freedom MEMS magnetic sensor, the MEMS pressure sensor, the GPS (global positioning system)/Beidou navigation satellite system chip and the ASIC (application specific integrated circuit) are packaged and integrated by the substrate-based packaging technology or packaged into an integrated module by the system-level packaging technology. The invention further provides various packaging modes of the module. The multi-degree-of-freedom microsensor module and the packaging modes thereof have the advantages that multi-degree-of-freedom physical quantity detection can be provided for equipment, design and packaging cost of various sensors can be greatly reduced, reliability of the sensors is improved, and the multifunctional sensors are wider in application field.
Description
Technical field
The present invention relates to a kind of measurement module, particularly a kind of multiple degrees of freedom microsensor module.
Background technology
Multiple degrees of freedom MEMS(microelectromechanical systems) accelerometer can measure the amount of acceleration of object in three directions, and multiple degrees of freedom MEMS gyroscope can be measured the angular velocity amount in object multiple directions, the magnetic flux that multiple degrees of freedom MEMS Magnetic Sensor can be measured object multiple directions, amount of pressure, the GPS/ Big Dipper navigation chip that MEMS pressure transducer can be measured certain point and can position.Each single sensor has had very large application in fields such as consumption, automobiles now, but still this multiple sensors is not carried out to the design and manufacture method that encapsulation and integration is a multivariant microsensor module at present.
And the microsensor module of multiple degrees of freedom integration packaging, can not only detect for equipment provides multivariant physical quantity, more can greatly reduce design and the packaging cost of multiple sensors, the reliability that improves sensor, makes Multifunction Sensor can be applied to the fields such as navigation, automobile, hand-held electronic devices, game and robot.
Summary of the invention
The object of the invention is for the defect existing in prior art, a kind of multiple degrees of freedom microsensor module is provided.
The present invention, by encapsulation technology or system in package technology based on substrate, is undertaken integrated by multiple degrees of freedom mems accelerometer, multiple degrees of freedom MEMS gyroscope, multiple degrees of freedom MEMS Magnetic Sensor, MEMS pressure transducer, GPS/ Big Dipper navigation chip by encapsulation.Thereby in very little encapsulation volume, realize at low cost the measurement of multiple degrees of freedom, multiparameter, and facilitate installation and use.
Multiple degrees of freedom microsensor module of the present invention comprises: multiple degrees of freedom mems accelerometer, multiple degrees of freedom MEMS gyroscope, multiple degrees of freedom MEMS Magnetic Sensor, MEMS pressure transducer, GPS/ Big Dipper navigation chip, ASIC integrated circuit, it is characterized in that described multiple degrees of freedom mems accelerometer, multiple degrees of freedom MEMS gyroscope, multiple degrees of freedom MEMS Magnetic Sensor, MEMS pressure transducer, GPS/ Big Dipper navigation chip, ASIC integrated circuit is carried out encapsulation and integration or is carried out the integrated module of encapsulation and integration by system in package (being called for short SiP) technology by the encapsulation technology based on substrate.
Described sensor is nude film or compact package part or the nude film based on the multichannel sensor signal conditioning ability of having of CMOS technique or compact package integration member, and described sensor special chip is fabricated in sealing cap.
The present invention also provides the multiple method for packing of multiple degrees of freedom microsensor module.
The substrate package of multiple degrees of freedom microsensor module: multiple degrees of freedom mems accelerometer, multiple degrees of freedom MEMS gyroscope, multiple degrees of freedom MEMS Magnetic Sensor, MEMS pressure transducer, GPS/ Big Dipper navigation chip plane are placed on to substrate one or both sides or are buried on certain one deck of substrate center.
Described substrate is ceramic substrate or epoxy glass cloth laminated board (FR4 substrate) or silicon substrate or flexible base, board or direct copper pottery (being called for short DBC) substrate or Direct Electroplating pottery (being called for short DPC) substrate or printed circuit board (PCB) (being called for short PCB substrate), and the material of printed circuit board (PCB) (being called for short PCB substrate), epoxy glass cloth laminated board (being called for short FR4 substrate) is copper-clad plate and aluminium base.
Described PCB substrate, FR4 substrate, be provided with a cavity at the medium line place of substrate, and cavity is in stress low area, and stress low area is lower by 1/3 ~ 2/3 than substrate surface stress.
Described use in printed circuit board volume to volume process technique; adopt flexibility coat copper plate; by pad pasting, expose, wash flow process, form circuit at flexibility coat copper plate, the thickness that adheres to one deck protection flexibility coat copper plate and bonding material on described flexibility coat copper plate is the layer material of 50 μ m ~ 100 μ m.
Multiple sensors is integrated on ceramic substrate; being that single or multiple sensor chips are stacking for the sensor chip that encapsulates is encapsulated in ceramic substrate after integrated again; ceramic base plate surface and inside are provided with wiring layer; described ceramic substrate is provided with groove; one or more sensor is encapsulated among groove; get up sensor package in inside cavity with block and ceramic substrate bonding, in described groove, fill full protective material or apply skim protective material by sensor outline.
Multiple sensors sensor is buried on certain one deck of substrate center (embedded encapsulation), sensor chip and substrate connected mode are flip chip bonding or Bonding mode, buried sensor top is according to profile shape-preserving coating one deck thin layer protective material of sensor, in the cavity of buried sensor, fill up protective material completely or do not fill any protective medium, cover sheet is stamped in the cavity top of buried sensor, bonding ring region on cover plate is the two wall constructions with cushion chamber, this pair of wall construction is for single-sensor or the integrated Vacuum Package of multiple sensor, or for the Vacuum Package of whole sensor assembly.
The system in package mode of multiple degrees of freedom microsensor module: multiple degrees of freedom mems accelerometer, multiple degrees of freedom MEMS gyroscope, multiple degrees of freedom MEMS Magnetic Sensor, MEMS pressure transducer, GPS/ Big Dipper navigation chip and ASIC integrated circuit are utilized intermediary layer (interposer) to carry out vertical stacking, vertically add planar, stacked mode and encapsulate.
Described intermediary layer is made by glass material, and intermediary layer method for making is deep hole etching, making insulation course, makes restraining barrier, making Seed Layer, deep hole filling metal material, or adopts deep hole etching, the making of copper post array, the assembling of copper post.Its inner connecting way be copper post directly connect or copper post on be added with lead or lead-free solder connects, described intermediary layer, the diameter of the through hole above it is larger than the diameter of copper post, to ensure enough build-up tolerances, and use and reliability testing in copper post and sidewall do not collide, the through hole after copper post assembles is filled or is not filled by the material (comprising silica gel) of low modulus.
Multiple degrees of freedom mems accelerometer, multiple degrees of freedom MEMS gyroscope, multiple degrees of freedom MEMS Magnetic Sensor, MEMS pressure transducer and ASIC integrated circuit are adopted to array lead-frame packages mode in system in package (SiP) mode, on framework, form array distribution, each sensor is connected with framework by au bump soldered ball with integrated circuit, described au bump soldered ball adopts Wire Bonding Technology to plant ball and makes, and described lead frame is common lead frame or the lead frame through punching press with low stress.
Multiple degrees of freedom microsensor module wafer level plastic package mode: wafer level plastic package technology (plastic wafer lever package), at wafer-level packaging platform by multiple degrees of freedom mems accelerometer, multiple degrees of freedom MEMS gyroscope, multiple degrees of freedom MEMS Magnetic Sensor, MEMS pressure transducer, ASIC integrated circuit is bonded on wafer by adhesive, wafer adopts the highly doped plastics of fine glass bead to pass through low temperature process, fine glass bead its thermal expansivity of wafer being made into that is bonded together can be reached to 7-9ppm with plastics, the highly doped plastics wafer of fine glass bead, make circuit realizes planar interconnect or realizes perpendicular interconnection by laser boring technique by traditional IC technique on surface.
In the Vacuum Package mode of multiple degrees of freedom microsensor module, multiple degrees of freedom mems accelerometer, multiple degrees of freedom MEMS gyroscope vertical stacking or horizontal stack are stacked on substrate and carry out Vacuum Package with block bonding, outside vacuum encapsulation structure, adopt block and substrate to enter bonding and carry out Vacuum Package, again with MEMS pressure transducer, that multiple degrees of freedom MEMS Magnetic Sensor carries out system in package is integrated, this pair of vacuum encapsulation structure can be for the encapsulation of single-sensor, also can be for the encapsulation of multiple sensors.
In the Vacuum Package mode of multiple degrees of freedom microsensor module for blocking a shot and substrate carries out the bonding ring region that bonding forms on the block of vacuum chamber and adopts the two wall constructions with cushion chamber.This pair of wall construction both can be for single-sensor or the integrated Vacuum Package of multiple sensor, also can be for the Vacuum Package of whole sensor assembly.
In packaged type, also comprise land grid array (LGA), BGA Package (BGA), substrate side surfaces and be processed with the metal covering for signal interconnection.
Advantage of the present invention is by encapsulation technology, and the height of having realized multiple sensors is integrated, has realized multivariant physical quantity detect with very little volume, more can greatly reduce design and the packaging cost of multiple sensors, improves the reliability of sensor.The simultaneously very big cost that must reduce modular design, system, for multifunction, the miniaturization of system provide condition.Make Multifunction Sensor can broader applications in fields such as navigation, automobile, hand-held electronic devices, game and robots.
Brief description of the drawings
The integration mode structural representation of Fig. 1 multiple degrees of freedom microsensor chip based on substrate;
Lead frame schematic diagram on Fig. 2 substrate;
Under the integration mode of Fig. 3 substrate, after special IC and multiple degrees of freedom micro sensing integrated chip, carry out again encapsulating structure schematic diagram;
The structural representation of Fig. 4 multiple degrees of freedom microsensor chip based on system in package;
The integration mode structural representation of Fig. 5 multiple degrees of freedom microsensor chip based on system in package;
Fig. 6 is by the encapsulating structure schematic diagram in special IC making and sealing cap;
The method for making schematic flow sheet (one) of the intermediary layer that Fig. 7 system in package technology adopts;
The method for making schematic flow sheet (two) of the intermediary layer that Fig. 8 system in package technology adopts;
Fig. 9 silicon through hole (TSV) structural representation;
Figure 10 silicon through hole (TSV) structural representation;
The structural representation (one) of Figure 11 embedded method for packing;
The structural representation (two) of Figure 12 embedded method for packing;
The structural representation (three) of Figure 13 embedded method for packing;
The structural representation (four) of Figure 14 embedded method for packing;
The structural representation (five) of Figure 15 embedded method for packing;
The structural representation of Figure 16 vacuum packaging method (two wall);
The structural representation of Figure 17 vacuum packaging method (two vacuum);
The structural representation of the integration packaging form of Figure 18 based on flexible copper-clad substrate;
The structural representation that Figure 19 adopts wafer level plastic package technology to encapsulate.
In figure: 1 multiple degrees of freedom MEMS gyroscope, 1a first chip, 1b second chip, 2 multiple degrees of freedom mems accelerometers, 3MEMS pressure transducer, 4 multiple degrees of freedom MEMS Magnetic Sensors, 5 sealing caps, 5a sealing cap, 5b sealing cap, 5c cover sheet, 6GPS/ Big Dipper navigation chip, 7 substrates, 7a substrate, 7b flexibility coat copper plate, 8 scolders, 9 solder joints, 9a soldered ball, 9b soldered ball, 10ASIC integrated circuit, 11, 12 filling materials, 12a protective material, 14 intermediary layers, 15 through holes, 15a copper post, the material of 16 low modulus, 17 lead-in wires, 17a flexible circuit, 18 protective materials, 19 thin layer protective materials, 20 sensor chips.
Embodiment
Further illustrate embodiments of the invention below in conjunction with accompanying drawing:
Embodiment mono-
Referring to Fig. 1, multiple degrees of freedom microsensor module of the present invention is made up of multiple degrees of freedom MEMS gyroscope 1, multiple degrees of freedom mems accelerometer 2, MEMS pressure transducer 3, multiple degrees of freedom MEMS Magnetic Sensor 4, GPS/ Big Dipper navigation chip 6, ASIC integrated circuit 10.It is integrated that the substrate 7 that these four kinds of MEMS sensors and special IC interconnect by scolder 8 and band carries out planar array, and by solder joint 9, signal is drawn.In order to promote reliability, the sensor assembly described in the present embodiment can adopt sealing cap 5 to protect.ASIC integrated circuit is made in sealing cap integrated with sensor chip.Sensor can be both nude film, can be also compact package part.Or it is integrated that certain sensing chip carries out single-chip, can be also nude film or the compact package integration member based on the multichannel sensor signal conditioning ability of having of CMOS technique.
The ASIC integrated circuit of the present embodiment and MEMS sensor chip, both can be placed in the surface of substrate as shown in FIG. 1, also can place it on certain one deck in the middle of substrate, or plane is placed on the both sides of substrate.Substrate can Ceramics substrate, FR4 substrate, silicon substrate, flexible base, board, DBC(direct copper pottery) substrate, DPC(Direct Electroplating pottery) substrate, aluminium base.Also can select printed circuit board (PCB) (pcb board), FR4 material substrate, wherein the baseplate material of printed circuit board (PCB) (pcb board), FR4 material substrate can be copper-clad plate and aluminium base.
On substrate with interconnect function described in the present embodiment, have array lead frame, as shown in Figure 2,17a is lead frame, and 7a is substrate, and each sensor is connected with framework by au bump soldered ball 9a with integrated circuit.Thereby being Wire Bonding Technology, the method for making of au bump soldered ball plants ball acquisition.Lead frame described in the present embodiment, can be general lead frame, can be also by punching press lead frame, obtains the lead frame with low stress.
Vacuum packaging method when encapsulation: adopt the two wall constructions with cushion chamber for carrying out with substrate the bonding ring region that bonding forms on the block of vacuum chamber.This pair of wall construction both can be for single-sensor or the integrated Vacuum Package of multiple sensor, also can be for the Vacuum Package of whole sensor assembly.The two wall constructions of the present embodiment utilization encapsulate multiple degrees of freedom MEMS gyroscope 1, multiple degrees of freedom mems accelerometer 2, MEMS pressure transducer 3, multiple degrees of freedom MEMS Magnetic Sensor 4 as shown in figure 16 and form.It is integrated that these four kinds of MEMS sensors carry out planar array by scolder 8 and substrate 7, protected by sealing cap 5, and sealing cap 5 has two wall constructions, signal being drawn by solder joint 9 of whole sensor assembly.
Embodiment bis-
Identical with embodiment mono-, difference is that multiple degrees of freedom MEMS gyroscope 1, multiple degrees of freedom mems accelerometer 2, MEMS pressure transducer 3, multiple degrees of freedom MEMS Magnetic Sensor 4, the GPS/ Big Dipper navigation chip 6 in embodiment mono-, mentioned are integrated respectively at ASIC integrated circuit, then on substrate, carry out integrated, as shown in Figure 3.And its integrated approach of the present embodiment as shown in Figure 6, ASIC integrated circuit (IC) chip 10 is produced in the sealing cap of MEMS sensor.
Embodiment tri-
Identical with embodiment mono-, difference is that Integrated Solution passes through system in package as shown in Figure 4.By multiple degrees of freedom MEMS gyroscope 1; multiple degrees of freedom mems accelerometer 2, MEMS pressure transducer 3, multiple degrees of freedom MEMS Magnetic Sensor 4, GPS/ Big Dipper navigation chip 6; these 5 kinds of sensors are integrated on the substrate 7 of band interconnection by system in package, and by sealing cap 5a, sealing cap 5b protection.15 is through hole, and MEMS pressure transducer is communicated with ambient atmosphere.Also can encapsulate by two vacuum methods, as shown in figure 17, first multiple degrees of freedom MEMS gyroscope 1, multiple degrees of freedom mems accelerometer 2 be carried out stackingly, have 2 layers of sealing cap outside stacking structure, this two-layer sealing cap inside is vacuum.And then with MEMS pressure transducer 3, that multiple degrees of freedom MEMS Magnetic Sensor 4 carries out system in package is integrated, sealing cap 5, with through hole 15, makes pressure transducer 3 and ambient atmosphere intercommunication.
The two vacuum methods of Vacuum Package can be that multiple degrees of freedom mems accelerometer 2, multiple degrees of freedom MEMS gyroscope vertical stacking or horizontal stack are stacked on substrate and carry out Vacuum Package with block bonding, outside vacuum encapsulation structure, adopt block and substrate to enter bonding and carry out Vacuum Package, again with MEMS pressure transducer, that multiple degrees of freedom MEMS Magnetic Sensor carries out system in package is integrated, this pair of vacuum encapsulation structure can be for the encapsulation of single-sensor, also can be for the encapsulation of multiple sensors.
Embodiment tetra-
Identical with embodiment mono-, difference is that multiple degrees of freedom MEMS gyroscope 1, multiple degrees of freedom mems accelerometer 2, multiple degrees of freedom MEMS Magnetic Sensor 4, GPS/ Big Dipper navigation chip 6 are by system in package and sealing cap 5, and interconnect by the ASIC integrated circuit 10 under silicon through hole TSV and intermediary layer 14, meanwhile, MEMS pressure transducer 3 also interconnects with ASIC integrated circuit 10.ASIC integrated circuit 10 is protected by filling material 12.Referring to Fig. 5.
The intermediary layer (interposer) that the present embodiment adopts, its method for making flow process is: deep hole etching, making insulation course, making restraining barrier, making Seed Layer, deep hole are filled metal material, as shown in Figure 7.The intermediary layer of made, its inner connecting way can be that copper post directly connects, and as shown in Figure 9, through intermediary layer 14, connects upper and lower first chip 1a and second chip 1b by copper post 15a.The diameter of the through hole on intermediary layer 14 is larger than the diameter of copper post 15a, to ensure enough build-up tolerances, and use and reliability testing in through-hole side wall on copper post 15a and intermediary layer 14 do not collide.
Embodiment five
Identical with embodiment tetra-, difference is: the method for making of intermediary layer 14 adopts following method flow: deep hole etching, copper post array are made, the assembling of copper post, as shown in Figure 8.The making material of the intermediary layer that adopts 14 can be glass.As shown in figure 10, the through hole on the intermediary layer 14 after copper post 15a assembling adopts the material (comprising silica gel) 16 of low modulus to fill.
Embodiment six
Identical with embodiment mono-, difference is the method for packing that adopts embedded, and adopts ceramic laminated encapsulation technology, will be integrated in ceramic substrate for the multiple sensors encapsulating, and there is wiring layer ceramic base plate surface and inside.As shown in figure 11, sensor chip 20 is connected with substrate 7 through scolder 8 by upside-down mounting embedded method for packing, is buried on certain middle one deck of substrate 7.
Embodiment seven
Identical with embodiment six, difference is to adopt the mode of Bonding to connect.As shown in figure 12, sensor chip 20 interconnects by 17 bondings that go between with substrate 7.
Embodiment eight
Identical with embodiment six, difference, as Figure 13 describes, on the surface of MEMS sensor chip and dedicated IC chip, can conformally apply one deck protective material 18 it is protected.Also can adopt mode as shown in figure 14, in the cavity of buried sensor, protective material 12a be filled up to whole cavity.
Embodiment nine
Identical with embodiment six; difference be as Figure 15 describe MEMS sensor chip and the protective material on dedicated IC chip surface be not necessary; but this must cover one deck cover sheet 5c with closed cavity at substrate surface, to protect the sensor in cavity.
Embodiment ten
Identical with embodiment bis-, difference is to adopt volume to volume (roll-to-roll) technology, by each sensor package on flexibility coat copper plate 7b.As shown in figure 18; multiple degrees of freedom MEMS gyroscope 1, multiple degrees of freedom mems accelerometer 2, MEMS pressure transducer 3, multiple degrees of freedom MEMS Magnetic Sensor 4, GPS/ Big Dipper navigation chip 6 are interconnected by the flexible circuit 17a on soldered ball 9b bonding and flexibility coat copper plate 7b; 19 is thin layer protective material, and the thickness of protective material 19 is 50 ~ 100 μ m.For the protection of flexibility coat copper plate and bonding material, and this layer material can reflux.
Embodiment 11
Identical with embodiment mono-, difference is that sensor chip 20 adopts wafer level plastic package technology to encapsulate, as shown in figure 19.Utilize adhesive to be bonded in plastics wafer 7c sensor chip 20 upper, and be connected with the lead frame 17a on wafer by lead-in wire 17, and by block 5c, sensor chip 20 is protected.The material of plastics wafer 7c, is by low temperature process, and with plastics, by the fine glass bead wafer being made into that is bonded together, its thermal expansivity can reach 7-9ppm.
Claims (14)
1. a multiple degrees of freedom microsensor module, comprise: multiple degrees of freedom mems accelerometer, multiple degrees of freedom MEMS gyroscope, multiple degrees of freedom MEMS Magnetic Sensor, MEMS pressure transducer, GPS/ Big Dipper navigation chip, ASIC integrated circuit, is characterized in that multiple degrees of freedom mems accelerometer, multiple degrees of freedom MEMS gyroscope, multiple degrees of freedom MEMS Magnetic Sensor, MEMS pressure transducer, GPS/ Big Dipper navigation chip, ASIC integrated circuit to be carried out encapsulation and integration or carried out the integrated module of encapsulation and integration by system in package technology by the encapsulation technology based on substrate.
2. multiple degrees of freedom microsensor module according to claim 1, it is characterized in that described sensor is nude film or compact package part or the nude film based on the multichannel sensor signal conditioning ability of having of CMOS technique or compact package integration member, described sensor chip is fabricated in sealing cap.
3. the substrate package of multiple degrees of freedom microsensor module as claimed in claim 1, is characterized in that multiple degrees of freedom mems accelerometer, multiple degrees of freedom MEMS gyroscope, multiple degrees of freedom MEMS Magnetic Sensor, MEMS pressure transducer, GPS/ Big Dipper navigation chip plane are placed on substrate one or both sides or are buried on certain one deck of substrate center.
4. the substrate package of multiple degrees of freedom microsensor module according to claim 3, is characterized in that described substrate is that the material of ceramic substrate or epoxy glass cloth laminated board or silicon substrate or flexible base, board or direct copper ceramic substrate or Direct Electroplating ceramic substrate or printed circuit board (PCB), epoxy glass cloth laminated board (FR4 substrate) is copper-clad plate and aluminium base.
5. the substrate package of multiple degrees of freedom microsensor module according to claim 4, it is characterized in that described printed circuit board (PCB), epoxy glass cloth laminated board, medium line place at substrate is provided with a cavity, and cavity is in stress low area, and stress low area is lower by 1/3 ~ 2/3 than substrate surface stress.
6. the substrate package of multiple degrees of freedom microsensor module according to claim 4; it is characterized in that described use in printed circuit board volume to volume process technique; adopt flexibility coat copper plate; by pad pasting, expose, wash flow process; form circuit at flexibility coat copper plate, the thickness that adheres to one deck protection flexibility coat copper plate and bonding material on described flexibility coat copper plate is the layer material of 50 μ m ~ 100 μ m.
7. the substrate package of the multiple degrees of freedom microsensor module described in a claim 3 or 4, it is characterized in that multiple sensors to be integrated on ceramic substrate, being that single or multiple sensor chips are stacking for the sensor chip that encapsulates is encapsulated in ceramic substrate after integrated again, ceramic base plate surface and inside are provided with wiring layer, described ceramic substrate is provided with groove, one or more sensor is encapsulated among groove, get up sensor package in inside cavity with ceramic substrate bonding with blocking a shot, in described groove, fill full protective material or apply skim protective material by sensor outline.
8. the substrate package of the multiple degrees of freedom microsensor module described in as according to claim 3, it is characterized in that on described certain one deck that multiple sensors is buried in to substrate center, sensor chip and substrate connected mode are flip chip bonding or Bonding mode, the protected mode of buried sensor is the profile shape-preserving coating one deck thin layer protective material according to sensor up, or in the cavity of buried sensor, fill up protective material completely or do not fill any protective medium, or the cavity of buried sensor top arranges cover sheet, bonding ring region on cover plate is the two wall constructions with cushion chamber, this pair of wall construction is for single-sensor or the integrated Vacuum Package of multiple sensor, or for the Vacuum Package of whole sensor assembly.
9. the system in package of multiple degrees of freedom microsensor module as described in claim 1, is characterized in that multiple degrees of freedom mems accelerometer, multiple degrees of freedom MEMS gyroscope, multiple degrees of freedom MEMS Magnetic Sensor, MEMS pressure transducer, GPS/ Big Dipper navigation chip and ASIC integrated circuit utilize intermediary layer to carry out vertical stacking, vertically add planar, stacked mode and encapsulate.
10. according to the system in package in the multiple degrees of freedom microsensor module described in claim 9, it is characterized in that described intermediary layer made by glass material, its inner connecting way be copper post directly connect or copper post on be added with lead or lead-free solder connects, the diameter of the through hole above intermediary layer is larger than the diameter of copper post, to ensure enough build-up tolerances, and use and reliability testing in copper post and sidewall do not collide, the through hole after copper post assembles is filled or is not filled by the material (comprising silica gel) of low modulus.
11. according to the system in package of the multiple degrees of freedom microsensor module described in claim 9, it is characterized in that multiple degrees of freedom mems accelerometer, multiple degrees of freedom MEMS gyroscope, multiple degrees of freedom MEMS Magnetic Sensor, MEMS pressure transducer and special IC adopt array lead-frame packages mode, on framework, form array distribution, each sensor is connected with framework by au bump soldered ball with integrated circuit, described au bump soldered ball adopts Wire Bonding Technology to plant ball and makes, described lead frame is common lead frame or the lead frame through punching press with low stress.
The wafer level plastic package of 12. multiple degrees of freedom microsensor modules as claimed in claim 1, it is characterized in that wafer is as wafer-level packaging platform, the ASIC integrated circuit of multiple degrees of freedom mems accelerometer, multiple degrees of freedom MEMS gyroscope, multiple degrees of freedom MEMS Magnetic Sensor, MEMS pressure transducer and module necessity is bonded on wafer by adhesive, wafer adopts the highly doped plastics of fine glass bead, pass through low temperature process, with plastics, by the fine glass bead wafer being made into that is bonded together, its thermal expansivity can reach 7-9ppm.Its plastics wafer can be made circuit and realize planar interconnect on surface by traditional IC technique, also can realize perpendicular interconnection by laser boring technique.
The Vacuum Package of 13. multiple degrees of freedom microsensor modules as claimed in claim 1, it is characterized in that multiple degrees of freedom mems accelerometer, multiple degrees of freedom MEMS gyroscope vertical stacking or horizontal stack to be stacked on substrate and to carry out Vacuum Package with block bonding, outside vacuum encapsulation structure, adopt block and substrate to enter bonding and carry out Vacuum Package, again with MEMS pressure transducer, that multiple degrees of freedom MEMS Magnetic Sensor carries out system in package is integrated, this pair of vacuum encapsulation structure can be for the encapsulation of single-sensor, also can be for the encapsulation of multiple sensors.
The Vacuum Package of 14. multiple degrees of freedom microsensor modules as claimed in claim 13, it is characterized in that carrying out with substrate the bonding ring region that bonding forms on the block of vacuum chamber adopts the two wall constructions with cushion chamber, this pair of wall construction both can be for single-sensor or the integrated Vacuum Package of multiple sensor, also can be for the Vacuum Package of whole sensor assembly.
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| CN113998659A (en) * | 2021-11-26 | 2022-02-01 | 美新半导体（无锡）有限公司 | Packaging structure and packaging method for integrating acceleration sensor and magnetic sensor |
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| CN106477510B (en) * | 2016-11-29 | 2018-03-20 | 合肥芯福传感器技术有限公司 | Stack MEMS sensor packaging body, chip and preparation method thereof |
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| CN113764391A (en) * | 2021-07-12 | 2021-12-07 | 太极半导体（苏州）有限公司 | Three-dimensional semiconductor stacked packaging structure comprising vertical conductive pillar structure |
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| CN113998659A (en) * | 2021-11-26 | 2022-02-01 | 美新半导体（无锡）有限公司 | Packaging structure and packaging method for integrating acceleration sensor and magnetic sensor |
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