CN100435366C - Method for low temp sintering, packaging and connecting high power LED by nano-silver soldering paste - Google Patents
Method for low temp sintering, packaging and connecting high power LED by nano-silver soldering paste Download PDFInfo
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- CN100435366C CN100435366C CNB2006100141575A CN200610014157A CN100435366C CN 100435366 C CN100435366 C CN 100435366C CN B2006100141575 A CNB2006100141575 A CN B2006100141575A CN 200610014157 A CN200610014157 A CN 200610014157A CN 100435366 C CN100435366 C CN 100435366C
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Abstract
The present invention discloses a method for sintering, packaging and connecting high power LEDs at low temperature through nanometer silver soldering paste, which belongs to the technology of sintering, packaging and connecting high power LEDs. The method adopts nanometer silver particles with the particle diameter of shorter than 100 nm which are uniformly mixed by using a dispersing agent of fish oil, a binding agent of alpha pine oil ethanol and a solvent of acetone under the assistance of an ultrasonic water bath to prepare the nanometer silver soldering paste used for sintering, packaging and connecting the high power LEDs at low temperature. The method is characterized in that the method has the process that the nanometer silver soldering paste is injected on a base plate to be connected with LEDs by using a screen printing machine or an adhesive dispenser; then, the nanometer silver soldering paste is put in a sintering furnace to be sintered; the sintering process is characterized in that the rate of temperature rise is 10 DEG C/min, the stagnation lasts 10 to 12 min after the temperature is raised to 50 DEG C to 70 DEG C in order to remove propanone, and then the stagnation lasts 35 to 40 min after the temperature is raised to the maximum temperature of 290 DEG C at the temperature rise rate of 10 DEG C/min so as to ensure the bonding strength; then, the nanometer silver soldering paste is naturally cooled to the room temperature to realize the sintering and the package of the high power LEDs. The method has the advantage that the electric conductivity, the thermal conductivity, the bonding strength and the high temperature resistant performance of LED package materials are improved.
Description
Technical field:
The present invention relates to a kind of method, belong to the technology of sintering packaging and connecting high power LED with the nano mattisolda low temp sintering, packaging and connecting high power LED.
Background technology:
Present domestic large-power light-emitting diodes (LED) encapsulation field adopts mostly is conductive silver glue, the thermal resistance height of this elargol and the inside basic structure after the curing are epoxy backbone and silver powder filled type heat-conductivity conducting structure, and this heat radiation and physical characteristic to device is stablized totally unfavorable.The refractive index of sealing epoxy in addition is relevant bigger, causes the inner cirtical angle of total reflection very little, and the light that active layer produces has only fraction to be output.Currently used conductive silver glue all can not meet the demands in conductance, adhesive strength, performance aspect high temperature resistant, and cost is more expensive.So the LED encapsulation field needs a kind of new high material of cost performance can improve the deficiency of conductive silver glue again when reducing cost.
Summary of the invention:
The object of the present invention is to provide a kind of method with the nano mattisolda low temp sintering, packaging and connecting high power LED, it is low that this method has a cost, the LED performance height after the encapsulation.
The present invention is realized by following technical proposals.Adopt particle diameter less than the 100nm nano silver particles, with dispersant fish oil, binding agent alpha-terpineol and solvent acetone evenly are mixed with the nano mattisolda that forms under ultrasonic water bath is assisted, the method of low temp sintering, packaging and connecting high power LED, it is characterized in that comprising following process: utilize silk screen printing or point gum machine that nano mattisolda is injected in and connect LED on the substrate, put into the sintering furnace sintering then, sintering process is: with the heating rate of 10 ℃/min, rise to after 50 ℃-70 ℃, be detained 10-12min and eliminate acetone, again with the heating rate of 10 ℃/min, after rising to 290 ℃ of maximum temperatures, 35-40min guarantees adhesive strength during delay, is cooled to room temperature then.
The invention has the advantages that, adopt the nano mattisolda sintering to connect LED, sintering temperature is below 300 ℃, organic solvent under this temperature in the soldering paste can volatilize does not fully influence silver layer conductivity and thermal conductivity, this process is compared with the epoxy encapsulation connection method of existing employing, has improved conductance, thermal conductivity, adhesive strength and the resistance to elevated temperatures of the LED material after the encapsulation.
Embodiment:
The preparation of nano mattisolda is silver particles adding dispersant fish oil, binding agent alpha-terpineol and the solvent acetone of 80nm with particle diameter, evenly is mixed with the nano mattisolda that forms under ultrasonic water bath is assisted.Adopt the process of this nano mattisolda packaged LED material to be: nano mattisolda is injected in substrate and is connected with LED with the TS3030 point gum machine, place the sintering furnace sintering afterwards, concrete sintering process is: with the heating rate of 10 ℃/min, reach after 70 ℃, insulation 10min is to eliminate acetone, after continuing heating rate with 10 ℃/min then and rising to 290 ℃ of maximum temperatures, insulation 40min guarantees adhesive strength, and furnace temperature naturally cools to room temperature.
In above-mentioned sintering process, sintering temperature is lower than 300 ℃, organic chemical evaporation and finish the contact of silver particles in the soldering paste in sintering process, and neck length is big, hole is closed, sphering, contraction form fine and close conductive silver layer, the last grain growth stage.Device working temperature after the sintering encapsulation can reach 350 ℃.
In the above-mentioned implementation process, also can utilize silk screen printing on substrate, nano mattisolda to be connected with LED, place the sintering furnace sintering afterwards, concrete sintering process is: with the heating rate of 10 ℃/min, reach after 50 ℃, insulation 12min to be to eliminate acetone, after continuing heating rate with 10 ℃/min then and rising to 290 ℃ of maximum temperatures, insulation 35min guarantees adhesive strength, and furnace temperature naturally cools to room temperature.
Claims (1)
1. method with nano mattisolda low temp sintering, packaging and connecting high power light-emitting diode, method adopts particle diameter less than the 100nm nano silver particles, with dispersant fish oil, binding agent alpha-terpineol and solvent acetone evenly are mixed with the nano mattisolda that forms under ultrasonic water bath is assisted, the low temp sintering, packaging and connecting high power light-emitting diode, it is characterized in that comprising following process: utilize silk screen printing or point gum machine that nano mattisolda is injected in and connect light-emitting diode on the substrate, put into the sintering furnace sintering then, sintering process is: with the heating rate of 10 ℃/min, rise to after 50 ℃-70 ℃, be detained 10-12min and eliminate acetone, again with the heating rate of 10 ℃/min, after rising to 290 ℃ of maximum temperatures, be detained 35-40min and guarantee adhesive strength, naturally cool to room temperature then, realize the sintering encapsulation of large-power light-emitting diodes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100141575A CN100435366C (en) | 2006-06-08 | 2006-06-08 | Method for low temp sintering, packaging and connecting high power LED by nano-silver soldering paste |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100141575A CN100435366C (en) | 2006-06-08 | 2006-06-08 | Method for low temp sintering, packaging and connecting high power LED by nano-silver soldering paste |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1870310A CN1870310A (en) | 2006-11-29 |
| CN100435366C true CN100435366C (en) | 2008-11-19 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNB2006100141575A Expired - Fee Related CN100435366C (en) | 2006-06-08 | 2006-06-08 | Method for low temp sintering, packaging and connecting high power LED by nano-silver soldering paste |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102637598A (en) * | 2012-04-18 | 2012-08-15 | 润奥电子(扬州)制造有限公司 | Method for manufacturing high-power semiconductor device die |
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| US7682875B2 (en) | 2008-05-28 | 2010-03-23 | Infineon Technologies Ag | Method for fabricating a module including a sintered joint |
| CN101888057B (en) * | 2009-05-11 | 2012-10-03 | 唐福云 | Preparation method of laser diode packaging case |
| CN101593712B (en) * | 2009-06-26 | 2012-01-04 | 天津大学 | Low-temperature sintering method for high-power chip connection and nano silver paste thickness control device |
| NL2005112C2 (en) | 2010-07-19 | 2012-01-23 | Univ Leiden | Process to prepare metal nanoparticles or metal oxide nanoparticles. |
| CN102510005A (en) * | 2011-12-16 | 2012-06-20 | 天津大学 | Laser diode packaging module and packaging method |
| CN102522695A (en) * | 2011-12-23 | 2012-06-27 | 天津大学 | Nano silver soldering paste packaged 60-watt 808-nano high-power semiconductor laser module and packaging method thereof |
| CN102554383A (en) * | 2012-03-19 | 2012-07-11 | 天津大学 | Method for realizing copper-copper bonding through current sintering technology and device thereof |
| CN102708943B (en) * | 2012-06-04 | 2014-04-16 | 惠州市富济电子材料有限公司 | Low-temperature sintered highly-heat-conductive and highly-electric-conductive silver paste, preparation method and sintering method |
| CN105118790B (en) * | 2015-07-23 | 2017-12-29 | 淄博美林电子有限公司 | A kind of high temperature packaging framework preparation method of silicon carbide diode |
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| JP2005285673A (en) * | 2004-03-30 | 2005-10-13 | Mitsui Mining & Smelting Co Ltd | Silver paste |
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2006
- 2006-06-08 CN CNB2006100141575A patent/CN100435366C/en not_active Expired - Fee Related
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|---|---|---|---|---|
| CN1437200A (en) * | 2003-01-14 | 2003-08-20 | 中山大学 | Low-content nanometer conducting silver paste and its prepn |
| WO2004072736A1 (en) * | 2003-02-11 | 2004-08-26 | Dongjin Semichem Co. Ltd. | Ag paste composition for microelectrode formation and microelectrode formed using the same |
| CN1599084A (en) * | 2003-09-15 | 2005-03-23 | 光宝科技股份有限公司 | Crystal solidifying method of light-emitting diode |
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| CN102637598A (en) * | 2012-04-18 | 2012-08-15 | 润奥电子(扬州)制造有限公司 | Method for manufacturing high-power semiconductor device die |
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| CN1870310A (en) | 2006-11-29 |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| EE01 | Entry into force of recordation of patent licensing contract |
Assignee: Huizhou Trust Industrial Co., Ltd. Assignor: Tianjin University Contract record no.: 2011440000696 Denomination of invention: Method for low temp sintering, packaging and connecting high power LED by nano-silver soldering paste Granted publication date: 20081119 License type: Exclusive License Open date: 20061129 Record date: 20110720 |
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| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20081119 Termination date: 20130608 |