CN100428027C - Radiation sensitive resin composition for forming partition, its forming method and liquid crystal display device - Google Patents
Radiation sensitive resin composition for forming partition, its forming method and liquid crystal display device Download PDFInfo
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- CN100428027C CN100428027C CNB200510000493XA CN200510000493A CN100428027C CN 100428027 C CN100428027 C CN 100428027C CN B200510000493X A CNB200510000493X A CN B200510000493XA CN 200510000493 A CN200510000493 A CN 200510000493A CN 100428027 C CN100428027 C CN 100428027C
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- China
- Prior art keywords
- partition
- compound
- methyl
- ester
- resin composition
- Prior art date
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- 230000005855 radiation Effects 0.000 title claims abstract description 53
- 239000011342 resin composition Substances 0.000 title claims abstract description 43
- 238000005192 partition Methods 0.000 title claims description 81
- 238000000034 method Methods 0.000 title claims description 26
- 239000004973 liquid crystal related substance Substances 0.000 title claims description 23
- -1 thiol compound Chemical class 0.000 claims abstract description 138
- 150000001875 compounds Chemical class 0.000 claims abstract description 71
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 239000003505 polymerization initiator Substances 0.000 claims abstract description 11
- 229920001577 copolymer Polymers 0.000 claims abstract description 10
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 claims abstract description 4
- 150000001244 carboxylic acid anhydrides Chemical class 0.000 claims abstract description 4
- 150000001732 carboxylic acid derivatives Chemical class 0.000 claims abstract description 4
- 239000000203 mixture Substances 0.000 claims description 67
- 150000002460 imidazoles Chemical class 0.000 claims description 44
- FKRCODPIKNYEAC-UHFFFAOYSA-N ethyl propionate Chemical compound CCOC(=O)CC FKRCODPIKNYEAC-UHFFFAOYSA-N 0.000 claims description 20
- 230000015572 biosynthetic process Effects 0.000 claims description 19
- 230000002285 radioactive effect Effects 0.000 claims description 19
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 14
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 12
- 239000004593 Epoxy Substances 0.000 claims description 12
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 claims description 12
- LSDPWZHWYPCBBB-UHFFFAOYSA-N Methanethiol Chemical compound SC LSDPWZHWYPCBBB-UHFFFAOYSA-N 0.000 claims description 12
- 229910052799 carbon Inorganic materials 0.000 claims description 12
- 125000003368 amide group Chemical group 0.000 claims description 11
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 claims description 10
- BAPJBEWLBFYGME-UHFFFAOYSA-N Methyl acrylate Chemical compound COC(=O)C=C BAPJBEWLBFYGME-UHFFFAOYSA-N 0.000 claims description 10
- 125000003118 aryl group Chemical group 0.000 claims description 7
- 125000000217 alkyl group Chemical group 0.000 claims description 6
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 6
- MTZQAGJQAFMTAQ-UHFFFAOYSA-N ethyl benzoate Chemical compound CCOC(=O)C1=CC=CC=C1 MTZQAGJQAFMTAQ-UHFFFAOYSA-N 0.000 claims description 5
- SDJHPPZKZZWAKF-UHFFFAOYSA-N 2,3-dimethylbuta-1,3-diene Chemical compound CC(=C)C(C)=C SDJHPPZKZZWAKF-UHFFFAOYSA-N 0.000 claims description 4
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 claims description 4
- RRHGJUQNOFWUDK-UHFFFAOYSA-N Isoprene Chemical compound CC(=C)C=C RRHGJUQNOFWUDK-UHFFFAOYSA-N 0.000 claims description 4
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 claims description 4
- 125000004093 cyano group Chemical group *C#N 0.000 claims description 4
- 125000005843 halogen group Chemical group 0.000 claims description 4
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 claims description 4
- NCFIKBMPEOEIED-UHFFFAOYSA-N 1-acridin-9-ylpyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C1=C(C=CC=C2)C2=NC2=CC=CC=C12 NCFIKBMPEOEIED-UHFFFAOYSA-N 0.000 claims description 2
- MKRBAPNEJMFMHU-UHFFFAOYSA-N 1-benzylpyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1CC1=CC=CC=C1 MKRBAPNEJMFMHU-UHFFFAOYSA-N 0.000 claims description 2
- BQTPKSBXMONSJI-UHFFFAOYSA-N 1-cyclohexylpyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C1CCCCC1 BQTPKSBXMONSJI-UHFFFAOYSA-N 0.000 claims description 2
- HIDBROSJWZYGSZ-UHFFFAOYSA-N 1-phenylpyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C1=CC=CC=C1 HIDBROSJWZYGSZ-UHFFFAOYSA-N 0.000 claims description 2
- HRPVXLWXLXDGHG-UHFFFAOYSA-N Acrylamide Chemical compound NC(=O)C=C HRPVXLWXLXDGHG-UHFFFAOYSA-N 0.000 claims description 2
- NLHHRLWOUZZQLW-UHFFFAOYSA-N Acrylonitrile Chemical compound C=CC#N NLHHRLWOUZZQLW-UHFFFAOYSA-N 0.000 claims description 2
- IEPRKVQEAMIZSS-UHFFFAOYSA-N Di-Et ester-Fumaric acid Natural products CCOC(=O)C=CC(=O)OCC IEPRKVQEAMIZSS-UHFFFAOYSA-N 0.000 claims description 2
- IEPRKVQEAMIZSS-WAYWQWQTSA-N Diethyl maleate Chemical compound CCOC(=O)\C=C/C(=O)OCC IEPRKVQEAMIZSS-WAYWQWQTSA-N 0.000 claims description 2
- GYCMBHHDWRMZGG-UHFFFAOYSA-N Methylacrylonitrile Chemical compound CC(=C)C#N GYCMBHHDWRMZGG-UHFFFAOYSA-N 0.000 claims description 2
- SUAKHGWARZSWIH-UHFFFAOYSA-N N,N‐diethylformamide Chemical compound CCN(CC)C=O SUAKHGWARZSWIH-UHFFFAOYSA-N 0.000 claims description 2
- XTXRWKRVRITETP-UHFFFAOYSA-N Vinyl acetate Chemical compound CC(=O)OC=C XTXRWKRVRITETP-UHFFFAOYSA-N 0.000 claims description 2
- 125000005250 alkyl acrylate group Chemical group 0.000 claims description 2
- ZEFVHSWKYCYFFL-UHFFFAOYSA-N diethyl 2-methylidenebutanedioate Chemical compound CCOC(=O)CC(=C)C(=O)OCC ZEFVHSWKYCYFFL-UHFFFAOYSA-N 0.000 claims description 2
- OBNCKNCVKJNDBV-UHFFFAOYSA-N ethyl butyrate Chemical compound CCCC(=O)OCC OBNCKNCVKJNDBV-UHFFFAOYSA-N 0.000 claims description 2
- FQPSGWSUVKBHSU-UHFFFAOYSA-N methacrylamide Chemical compound CC(=C)C(N)=O FQPSGWSUVKBHSU-UHFFFAOYSA-N 0.000 claims description 2
- 125000002768 hydroxyalkyl group Chemical group 0.000 claims 1
- 230000006835 compression Effects 0.000 abstract description 12
- 238000007906 compression Methods 0.000 abstract description 12
- 230000035945 sensitivity Effects 0.000 abstract description 7
- 125000006850 spacer group Chemical group 0.000 abstract description 4
- 125000004663 dialkyl amino group Chemical group 0.000 abstract 1
- 125000003700 epoxy group Chemical group 0.000 abstract 1
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 77
- 229910052757 nitrogen Inorganic materials 0.000 description 57
- 239000010408 film Substances 0.000 description 34
- DNIAPMSPPWPWGF-UHFFFAOYSA-N monopropylene glycol Natural products CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 20
- 230000000052 comparative effect Effects 0.000 description 19
- 239000000243 solution Substances 0.000 description 16
- 150000002148 esters Chemical class 0.000 description 15
- 239000004094 surface-active agent Substances 0.000 description 15
- 239000003795 chemical substances by application Substances 0.000 description 14
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 12
- 239000002904 solvent Substances 0.000 description 12
- 238000011161 development Methods 0.000 description 11
- 238000011156 evaluation Methods 0.000 description 11
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 10
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 10
- 239000002253 acid Substances 0.000 description 10
- VPVSTMAPERLKKM-UHFFFAOYSA-N glycoluril Chemical class N1C(=O)NC2NC(=O)NC21 VPVSTMAPERLKKM-UHFFFAOYSA-N 0.000 description 10
- 230000000977 initiatory effect Effects 0.000 description 10
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 9
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 9
- 229940017219 methyl propionate Drugs 0.000 description 9
- 230000009467 reduction Effects 0.000 description 9
- 229920005989 resin Polymers 0.000 description 9
- 239000011347 resin Substances 0.000 description 9
- DCKVNWZUADLDEH-UHFFFAOYSA-N sec-butyl acetate Chemical compound CCC(C)OC(C)=O DCKVNWZUADLDEH-UHFFFAOYSA-N 0.000 description 9
- 239000000126 substance Substances 0.000 description 9
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 8
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 8
- 238000012646 carbonyl polymerization Methods 0.000 description 8
- 239000011521 glass Substances 0.000 description 8
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 7
- 239000000853 adhesive Substances 0.000 description 7
- 230000001070 adhesive effect Effects 0.000 description 7
- DKPFZGUDAPQIHT-UHFFFAOYSA-N butyl acetate Chemical compound CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 7
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 7
- YKYONYBAUNKHLG-UHFFFAOYSA-N propyl acetate Chemical compound CCCOC(C)=O YKYONYBAUNKHLG-UHFFFAOYSA-N 0.000 description 7
- 150000003254 radicals Chemical class 0.000 description 7
- 238000001228 spectrum Methods 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 6
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 6
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 6
- 239000000047 product Substances 0.000 description 6
- DUJMVKJJUANUMQ-UHFFFAOYSA-N 4-methylpentanenitrile Chemical compound CC(C)CCC#N DUJMVKJJUANUMQ-UHFFFAOYSA-N 0.000 description 5
- RVWADWOERKNWRY-UHFFFAOYSA-N [2-(dimethylamino)phenyl]-phenylmethanone Chemical compound CN(C)C1=CC=CC=C1C(=O)C1=CC=CC=C1 RVWADWOERKNWRY-UHFFFAOYSA-N 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 5
- 229940079593 drug Drugs 0.000 description 5
- 239000003814 drug Substances 0.000 description 5
- 150000002170 ethers Chemical class 0.000 description 5
- 238000001914 filtration Methods 0.000 description 5
- 238000000227 grinding Methods 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 239000003381 stabilizer Substances 0.000 description 5
- YXIWHUQXZSMYRE-UHFFFAOYSA-N 1,3-benzothiazole-2-thiol Chemical compound C1=CC=C2SC(S)=NC2=C1 YXIWHUQXZSMYRE-UHFFFAOYSA-N 0.000 description 4
- RWNUSVWFHDHRCJ-UHFFFAOYSA-N 1-butoxypropan-2-ol Chemical compound CCCCOCC(C)O RWNUSVWFHDHRCJ-UHFFFAOYSA-N 0.000 description 4
- UAJRSHJHFRVGMG-UHFFFAOYSA-N 1-ethenyl-4-methoxybenzene Chemical compound COC1=CC=C(C=C)C=C1 UAJRSHJHFRVGMG-UHFFFAOYSA-N 0.000 description 4
- JOLQKTGDSGKSKJ-UHFFFAOYSA-N 1-ethoxypropan-2-ol Chemical compound CCOCC(C)O JOLQKTGDSGKSKJ-UHFFFAOYSA-N 0.000 description 4
- FENFUOGYJVOCRY-UHFFFAOYSA-N 1-propoxypropan-2-ol Chemical compound CCCOCC(C)O FENFUOGYJVOCRY-UHFFFAOYSA-N 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 4
- KAKZBPTYRLMSJV-UHFFFAOYSA-N Butadiene Chemical compound C=CC=C KAKZBPTYRLMSJV-UHFFFAOYSA-N 0.000 description 4
- LCGLNKUTAGEVQW-UHFFFAOYSA-N Dimethyl ether Chemical compound COC LCGLNKUTAGEVQW-UHFFFAOYSA-N 0.000 description 4
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 4
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 4
- XOBKSJJDNFUZPF-UHFFFAOYSA-N Methoxyethane Chemical compound CCOC XOBKSJJDNFUZPF-UHFFFAOYSA-N 0.000 description 4
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 4
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 4
- REUQOSNMSWLNPD-UHFFFAOYSA-N [2-(diethylamino)phenyl]-phenylmethanone Chemical compound CCN(CC)C1=CC=CC=C1C(=O)C1=CC=CC=C1 REUQOSNMSWLNPD-UHFFFAOYSA-N 0.000 description 4
- 230000006978 adaptation Effects 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 4
- DYKQZKPEUOVBCV-UHFFFAOYSA-N cyclopentylmethyl prop-2-enoate Chemical compound C=CC(=O)OCC1CCCC1 DYKQZKPEUOVBCV-UHFFFAOYSA-N 0.000 description 4
- SWXVUIWOUIDPGS-UHFFFAOYSA-N diacetone alcohol Chemical compound CC(=O)CC(C)(C)O SWXVUIWOUIDPGS-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 4
- 229910052731 fluorine Inorganic materials 0.000 description 4
- 239000011737 fluorine Substances 0.000 description 4
- 125000003709 fluoroalkyl group Chemical group 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 238000005227 gel permeation chromatography Methods 0.000 description 4
- VOZRXNHHFUQHIL-UHFFFAOYSA-N glycidyl methacrylate Chemical compound CC(=C)C(=O)OCC1CO1 VOZRXNHHFUQHIL-UHFFFAOYSA-N 0.000 description 4
- WXZMFSXDPGVJKK-UHFFFAOYSA-N pentaerythritol Chemical compound OCC(CO)(CO)CO WXZMFSXDPGVJKK-UHFFFAOYSA-N 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000003756 stirring Methods 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- KDYFGRWQOYBRFD-UHFFFAOYSA-N succinic acid Chemical compound OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 description 4
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 4
- TXBCBTDQIULDIA-UHFFFAOYSA-N 2-[[3-hydroxy-2,2-bis(hydroxymethyl)propoxy]methyl]-2-(hydroxymethyl)propane-1,3-diol Chemical compound OCC(CO)(CO)COCC(CO)(CO)CO TXBCBTDQIULDIA-UHFFFAOYSA-N 0.000 description 3
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- SSOONFBDIYMPEU-UHFFFAOYSA-N [3-hydroxy-2-[[3-hydroxy-2,2-bis(hydroxymethyl)propoxy]methyl]-2-(hydroxymethyl)propyl] prop-2-enoate Chemical compound OCC(CO)(CO)COCC(CO)(CO)COC(=O)C=C SSOONFBDIYMPEU-UHFFFAOYSA-N 0.000 description 3
- KXKVLQRXCPHEJC-UHFFFAOYSA-N acetic acid trimethyl ester Natural products COC(C)=O KXKVLQRXCPHEJC-UHFFFAOYSA-N 0.000 description 3
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- 239000007864 aqueous solution Substances 0.000 description 3
- 239000002585 base Substances 0.000 description 3
- 238000009835 boiling Methods 0.000 description 3
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- 125000004494 ethyl ester group Chemical group 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 150000002576 ketones Chemical class 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 description 3
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 3
- 238000006116 polymerization reaction Methods 0.000 description 3
- 125000006225 propoxyethyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])OC([H])([H])C([H])([H])* 0.000 description 3
- 230000002829 reductive effect Effects 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
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- SSLASPHAKUVIRG-UHFFFAOYSA-N (2-methylcyclohexyl) prop-2-enoate Chemical compound CC1CCCCC1OC(=O)C=C SSLASPHAKUVIRG-UHFFFAOYSA-N 0.000 description 2
- CXYXLEZVDSUZQU-UHFFFAOYSA-N 1,1,2,2,3,3-hexafluoro-1-(1,1,2,2,3,3-hexafluoropentoxy)pentane Chemical compound CCC(F)(F)C(F)(F)C(F)(F)OC(F)(F)C(F)(F)C(F)(F)CC CXYXLEZVDSUZQU-UHFFFAOYSA-N 0.000 description 2
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- ZADXFVHUPXKZBJ-UHFFFAOYSA-N 2-[(4-ethenylphenyl)methoxymethyl]oxirane Chemical compound C1=CC(C=C)=CC=C1COCC1OC1 ZADXFVHUPXKZBJ-UHFFFAOYSA-N 0.000 description 2
- HCLJOFJIQIJXHS-UHFFFAOYSA-N 2-[2-[2-(2-prop-2-enoyloxyethoxy)ethoxy]ethoxy]ethyl prop-2-enoate Chemical compound C=CC(=O)OCCOCCOCCOCCOC(=O)C=C HCLJOFJIQIJXHS-UHFFFAOYSA-N 0.000 description 2
- BLRJSXFWDNMKQT-UHFFFAOYSA-N 2-n-methoxy-1,3,5-triazine-2,4,6-triamine Chemical compound CONC1=NC(N)=NC(N)=N1 BLRJSXFWDNMKQT-UHFFFAOYSA-N 0.000 description 2
- NTPLXRHDUXRPNE-UHFFFAOYSA-N 4-methoxyacetophenone Chemical compound COC1=CC=C(C(C)=O)C=C1 NTPLXRHDUXRPNE-UHFFFAOYSA-N 0.000 description 2
- LPEKGGXMPWTOCB-UHFFFAOYSA-N 8beta-(2,3-epoxy-2-methylbutyryloxy)-14-acetoxytithifolin Natural products COC(=O)C(C)O LPEKGGXMPWTOCB-UHFFFAOYSA-N 0.000 description 2
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 2
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- ZIBGPFATKBEMQZ-UHFFFAOYSA-N triethylene glycol Chemical compound OCCOCCOCCO ZIBGPFATKBEMQZ-UHFFFAOYSA-N 0.000 description 1
- YUYCVXFAYWRXLS-UHFFFAOYSA-N trimethoxysilane Chemical compound CO[SiH](OC)OC YUYCVXFAYWRXLS-UHFFFAOYSA-N 0.000 description 1
- 229940113165 trimethylolpropane Drugs 0.000 description 1
- XYRAEZLPSATLHH-UHFFFAOYSA-N trisodium methoxy(trioxido)silane Chemical compound [Na+].[Na+].[Na+].CO[Si]([O-])([O-])[O-] XYRAEZLPSATLHH-UHFFFAOYSA-N 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
- G03F7/033—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds, e.g. vinyl polymers
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D333/00—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom
- C07D333/50—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom condensed with carbocyclic rings or ring systems
- C07D333/72—Benzo[c]thiophenes; Hydrogenated benzo[c]thiophenes
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F2/00—Processes of polymerisation
- C08F2/46—Polymerisation initiated by wave energy or particle radiation
- C08F2/48—Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light
- C08F2/50—Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light with sensitising agents
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
- C08F220/32—Esters containing oxygen in addition to the carboxy oxygen containing epoxy radicals
- C08F220/325—Esters containing oxygen in addition to the carboxy oxygen containing epoxy radicals containing glycidyl radical, e.g. glycidyl (meth)acrylate
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D201/00—Coating compositions based on unspecified macromolecular compounds
- C09D201/02—Coating compositions based on unspecified macromolecular compounds characterised by the presence of specified groups, e.g. terminal or pendant functional groups
- C09D201/06—Coating compositions based on unspecified macromolecular compounds characterised by the presence of specified groups, e.g. terminal or pendant functional groups containing oxygen atoms
- C09D201/08—Carboxyl groups
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
- G03F7/0007—Filters, e.g. additive colour filters; Components for display devices
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0755—Non-macromolecular compounds containing Si-O, Si-C or Si-N bonds
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
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- Health & Medical Sciences (AREA)
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- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
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- Wood Science & Technology (AREA)
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- Liquid Crystal (AREA)
- Graft Or Block Polymers (AREA)
- Epoxy Resins (AREA)
Abstract
The presetn invention provided a radiation-sensitive resin composition for forming spacers which is of high resolution and of high sensitivity even when radiation for exposure practically contains no beam with wavelength <350 nm, and which easily forms the spacers excellent in various performances such as a pattern shape, compression strength, rubbing resistance, and adhesion to a transparent substrate. The radiation-sensitive resin composition for the spacers contains [A] a copolymer of an unsaturated carboxylic acid and/or an unsaturated carboxylic acid anhydride (a1), an unsaturated compound containing an epoxy group (a2) and another unsaturated compound (a3), [B] polymerizable unsaturated compound, [C] a biimidazole compound, [D] a radiation-sensitive polymerization initiator having a carbonyl group, and [E] a compound having a dialkylamino group and/or [F] a thiol compound.
Description
Technical field
The present invention relates to partition and form, even and then the radiation sensitive resin composition that at length relates to use the radioactive ray that do not contain the following wavelength of 350nm to expose in fact and also can form partition, the partition that forms by it and forming method thereof and liquid crystal display cells with this partition with radiation sensitive resin composition, partition (spacer) and forming method thereof and liquid crystal display cells.
Background technology
For liquid crystal display cells, in the past, for the interval between 2 transparency carriers is kept certain, use has the partition particle of beaded glass, plastic bead of the particle diameter of regulation etc., but because these partition particles randomly are dispersed on the transparency carrier of glass substrate etc., so when forming the pixel field and have the partition particle, then produce the partition particle and write phenomenon, incident light is subjected to scattering, the problem that the contrast of liquid crystal display cells reduces.
Therefore, in order to address these problems the method that adopts the photoetching process partition to form.This method is radiation sensitive resin composition to be coated on the substrate develop after the mask exposure ultraviolet ray by regulation, forms the partition of point-like or striated, and only the position partition beyond pixel forms the field forms, so solved the problems referred to above basically.
; the radioactive ray of the mercury vapor lamp that uses as photolithographic light source; usually near 436nm (g line); near the 404nm (h line); near the 365nm (i line); near the 335nm; near the 315nm (j line); wait near the 303nm and show the very strong spectrum of intensity; so radiation-sensitive polymerization initiator as the composition of radiation sensitive resin composition; usually the selection use has maximum absorption wavelength on the very strong spectral wavelength field of these intensity; in nearly all occasion; viewpoint from the transparency; use the field of wavelength below the i line to have the radiation-sensitive polymerization initiator of maximum absorption wavelength; (for example, with reference to patent documentation 1.)。If when having the radiation-sensitive polymerization initiator of maximum absorption wavelength near the g line of use wavelength ratio i line length, the h line, because this radiation-sensitive polymerization initiator has absorption in the wavelength field near luminous ray, so it is painted and the transparency film that forms reduces to contain its radiation sensitive resin composition.If the transparency of film reduces, when exposure, be cured reaction on the film surface, curing reaction at the depth direction of film is insufficient, its result, the shape of the partition that obtains after the development becomes back taper (as the limit on the section shape film surface upside-down triangle shape than the length of side of substrate-side), becomes the reason that partition is peeled off during the milled processed of oriented film afterwards.
[patent documentation 1] spy opens the 2001-261761 communique
On the other hand, form in the technology at the partition of reality, when for example on being used for the transparency carrier of colorized optical filtering mirror etc., forming partition, use the convergence exposure machine mostly with photoetching process, but in order to improve the luminous flux of convergence exposure machine, generally use the high mercury vapor lamp of illumination in recent years.At this moment,, when directly using, make the life-span of the catoptron that is used for exposure machine reduce, so be to cut off the back with short wavelength's radioactive ray that optical filtering will have a not enough 350nm of high-octane wavelength to use mostly though produce effect improving on the luminous flux.; radiation-sensitive polymerization initiator in the past nearly all is to have maximum absorption wavelength when not enough 350nm; so if when cutting off the radioactive ray of the not enough 350nm of wavelength; the spike of the necessary free radical of curing etc. for radiation sensitive resin composition then can not fully take place; and make curing reaction insufficient, be difficult to obtain the size or the shape of satiable partition.
Summary of the invention
Problem of the present invention is to provide the partition radiation sensitive resin composition, even use the exposure that does not contain the radioactive ray that are lower than the 350nm wavelength in fact, also can easily form high resolving power, high sensitivity, and graphics shape, compression strenght, grinding patience, the liquid crystal display cells that forms method and have this partition with the partition of all function admirables of the adaptation of transparency carrier etc., by its partition that forms and partition.
The present invention 1 is that radiation sensitive resin composition is used in partition formation, it is characterized in that containing following composition:
[A] (a1) unsaturated carboxylic acid and/or unsaturated carboxylic acid anhydrides and, (a2) contain the epoxy radicals unsaturated compound and, (a3) other unsaturated compound multipolymer,
[B] polymerizable unsaturated compound,
[C] two imidazole compounds,
[D] has the radiation-sensitive polymerization initiator of carbonyl, and
[E] has compound and/or [F] mercaptan based compound of dialkyl amido.
Said in the present invention " radioactive ray " are meant the ray that comprises ultraviolet ray, far ultraviolet, X line, electronics line, molecular line, γ line, synchrotron radioactive ray, proton beam radioactive ray etc.
The present invention 2 is partitions, is formed with radiation sensitive resin composition by above-mentioned partition to form.
The present invention 3 is formation methods of partition, and its feature contains the operation of following (1)~(4) at least:
(1) on substrate, form the present invention 1 or 2 described partitions form operation with the film of radiation sensitive resin compositions,
(2) at least a portion of this film the exposure do not contain in fact the radioactive ray that are lower than the 350nm wavelength operation,
(3) to the film operation of developing after the exposure,
(4) operation that the film after developing is heated.
The present invention 4 is the liquid crystal display cells with above-mentioned partition.
Description of drawings
Fig. 1 be expression see through ultraviolet ray see through filter membrane " UV-35 " mercury vapor lamp luminous spectrum (thick line) and do not see through the figure of ultraviolet ray through the luminous spectrum (fine rule) of the mercury vapor lamp of filter membrane.
Fig. 2 is the mode chart of an example of the structure of expression liquid crystal display cells.
Fig. 3 is other routine mode charts of the structure of expression liquid crystal display cells.
Fig. 4 is the mode chart of expression partition section shape.
Embodiment
Below, the present invention is described in detail.
The partition radiation sensitive resin composition
Below, for partition of the present invention with radiation sensitive resin composition (below, abbreviate " radiation sensitive resin composition " as.) each composition describe in detail.
[A] multipolymer
[A] composition of radiation sensitive resin composition of the present invention by (a1) unsaturated carboxylic acid and/or unsaturated carboxylic acid anhydrides (below, its conclusion is called " compound (a1) ".), (a2) contain epoxy radicals unsaturated compound (below, be called " compound (a2) ".) and (a3) other unsaturated compound (below, be called " compound (a3) ".) multipolymer (below, be called " [A] multipolymer ".) constitute.
As compound (a1), for example can enumerate the monocarboxylic acid class of acrylic acid, methacrylic acid, butenoic acid, succinic acid list (2-acrylyl oxy-ethyl), succinic acid list (2-methylacryoyloxyethyl), hexahydro-phthalic acid list (2-acrylyl oxy-ethyl), hexahydro-phthalic acid list (2-methylacryoyloxyethyl) etc.; The omega-dicarboxylic acids of maleic acid, fumaric acid, citraconic acid, mesaconic acid, itaconic acid etc.; These dicarboxylic anhydride class etc.
In these compounds (a1), from copolyreaction and obtaining easily, preferably acrylic acid, methacrylic acid, maleic anhydride etc.
Above-claimed cpd (a1) can separately or mix more than 2 kinds and use.
In [A] multipolymer, from the containing ratio of the formation unit that compound (a1) is derived, preferably 5~50 weight %, particularly preferably be 10~40 weight %.At this moment, if this constitutes the containing ratio less than 5 weight % of unit, the compression strenght of the partition that obtains, thermotolerance and resistance to chemical reagents have the trend of reduction, on the other hand, if surpass 50 weight %, partition has reduction trend with the storage stability of radiation sensitive resin composition.
In addition, as compound (a2), for example can enumerate glycidyl acrylate, glycidyl methacrylate, the α-Yi Jibingxisuan ethylene oxidic ester, α-n-propyl group glycidyl acrylate, α-n-butylacrylic acid ethylene oxidic ester, acrylic acid 3,4-epoxy butyl ester, methacrylic acid 3,4-epoxy butyl ester, α-Yi Jibingxisuan 3,4-epoxy butyl ester, acrylic acid 6,7-epoxy heptyl ester, methacrylic acid 6,7-epoxy heptyl ester, α-Yi Jibingxisuan 6,7-epoxy heptyl ester, acrylic acid Beta-methyl ethylene oxidic ester, methacrylic acid Beta-methyl ethylene oxidic ester, propenoic acid beta-ethyl ethylene oxidic ester, methacrylic acid β-ethyl ethylene oxidic ester, propenoic acid beta-n-propyl group ethylene oxidic ester, methacrylic acid β-n-propyl group ethylene oxidic ester, acrylic acid 3,4-epoxy radicals cyclohexyl, methacrylic acid 3, the carboxylic acid esters of 4-epoxy radicals cyclohexyl etc.; The ethers of o-vinyl benzyl glycidyl ether, m-vinyl benzyl glycidyl ether, p-vinyl benzyl glycidyl ether etc.
In these compounds (a2), intensity from the partition that improves copolyreaction and obtain, preferably glycidyl methacrylate, methacrylic acid 6,7-epoxy radicals heptyl ester, methacrylic acid 3,4-epoxy radicals cyclohexyl, methacrylic acid Beta-methyl ethylene oxidic ester, o-vinyl benzyl glycidyl ether, m-vinyl benzyl glycidyl ether, p-vinyl benzyl glycidyl ether etc.
Above-claimed cpd (a2) can separately or mix more than 2 kinds and use.
In [A] multipolymer, from the containing ratio of the formation unit that compound (a2) is derived, preferably 10~70 weight %, particularly preferably be 20~60 weight %.At this moment, if this constitutes the containing ratio less than 10 weight % of unit, the compression strenght of the partition that obtains, thermotolerance and resistance to chemical reagents have the trend of reduction, on the other hand, if surpass 70 weight %, partition has the trend of reduction with the storage stability of radiation sensitive resin composition.
In addition, as compound (a3), for example can enumerate the alkyl-acrylates of methacrylate, ethyl propylene acid esters, n-propyl group acrylate, i-propyl group acrylate, n-butylacrylic acid ester, i-butylacrylic acid ester, sec-butylacrylic acid ester, t-butylacrylic acid ester etc.; The alkyl methacrylate of methyl methacrylate, Jia Jibingxisuanyizhi, methacrylic acid n-propyl ester, methacrylic acid i-propyl ester, methacrylic acid n-butyl ester, methacrylic acid i-butyl ester, methacrylic acid sec-butyl ester, methacrylic acid t-butyl ester etc.; Cyclohexyl acrylate, 2-methylcyclohexyl acrylate, three ring [5.2.1.0
2,6] decane-8-base acrylate (below, will " three ring [5.2.1.0
2,6] decane-8-yl " be called " two cyclopentyl ".), acrylic acid alicyclic ester class of 2-two cyclopentyl oxygen ethyl propylene acid esters, iso-bornyl acrylate, tetrahydrofuran base acrylate etc.; The alicyclic ester class of the methacrylic acid of cyclohexyl methyl acrylate, 2-methylcyclohexyl methacrylate, two cyclopentyl-methyl acrylate, 2-two cyclopentyl oxygen ethyl-methyl acrylate, isobornyl methacrylate, tetrahydrofuran base methacrylate etc.; The acrylic acid aryl ester class of phenyl acrylate, benzyl acrylate etc.; The aryl methacrylate class of phenyl methyl acrylate, benzyl methacrylate etc.; The dicarboxylic diester class of diethyl maleate, DEF, diethyl itaconate etc.; The acrylic acid hydroxyalkyl acrylate class of 2-hydroxyethylmethacry,ate, 2-hydroxypropyl acrylate etc.; The methacrylic acid hydroxyl alkyl esters of 2-hydroxyethyl methacrylate, 2-hydroxy propyl methacrylate etc.; Styrene, α-Jia Jibenyixi, the m-methyl styrene, the p-methyl styrene, the aromatic ethenyl compound of p-methoxy styrene etc. and, vinyl cyanide, methacrylonitrile, vinyl chloride, inferior vinyl chloride, acrylamide, Methacrylamide, vinyl acetate, 1, the 3-butadiene, isoprene, 2,3-dimethyl-1,3-butadiene, N-cyclohexyl maleimide, N-phenylmaleimide, N-benzyl maleimide, N-succinimido-3-maleimide benzoic ether, N-succinimido-4-maleimide butyric ester, N-succinimido-6-maleimide capronate, N-succinimido-3-maleimide propionic ester, N-(9-acridinyl) maleimide etc.
In these compounds (a3), from copolyreaction, preferably 2-methylcyclohexyl acrylate, t-butyl methyl acrylate, two cyclopentyl-methyl acrylate, styrene, p-methoxy styrene, 1,3-butadiene etc.
Above-claimed cpd (a3) can separately or mix more than 2 kinds and use.
In [A] multipolymer, from the containing ratio of the formation unit that compound (a3) is derived preferably 10~80 weight %, particularly preferably be 20~60 weight %.At this moment, if this constitutes the containing ratio less than 10 weight % of unit, then partition may reduce with the storage stability of radiation sensitive resin composition, and on the other hand, if surpass 80 weight %, then development property may reduce.
[A] multipolymer with gel permeation chromatography (GPC) measure be converted into the polystyrene weight-average molecular weight (below, be called " Mw ".) normally 2 * 10
3~5 * 10
5, preferably 5 * 10
3~1 * 10
5At this moment, if the Mw less than 2 * 10 of [A] multipolymer
3The time, the compression strenght of the partition that obtains and thermotolerance have the trend of reduction, on the other hand, if surpass 5 * 10
5, the trend of development reduction is arranged.
In the present invention, [A] multipolymer can separately or mix more than 2 kinds and use.
[A] multipolymer for example can be in solvent, make by radical polymerization compound (a1), compound (a2) and compound (a3) in the presence of the polymerization initiator.
Be used for making the solvent of [A] multipolymer, for example can enumerate the alcohols of methyl alcohol, ethanol etc.; The ethers of tetrahydrofuran etc.; The gylcol ether of glycol monomethyl methyl ether, ethylene glycol monomethyl ether etc.; The ethylene glycol alkyl ether acetate esters of Ethylene Glycol Methyl ether acetic acid ester, ethylene glycol monoethyl ether acetate etc.; The diglycol ethers of diglycol monotertiary methyl ether, carbiphene, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, diglycol ethyl-methyl ether etc.; The propylene glycol ethers of methyl proxitol, propylene glycol ethylether, propylene glycol-n-propyl ether, propylene glycol-n-butyl ether etc.; The propylene glycol alkyl ether acetic acid ester class of methyl proxitol acetate, propylene glycol ethylether acetic acid esters, propylene glycol-n-propyl ether acetic acid esters, propylene glycol-n-butyl ether acetic acid esters etc.; The propylene glycol alkyl ether propionic acid ester of methyl proxitol propionic ester, propylene glycol ethylether propionic ester, propylene glycol-n-propyl ether propionic ester, propylene glycol-n-butyl ether propionic ester etc.; Toluene, dimethylbenzene etc. aromatic hydrocarbon based; The ketone of methyl ethyl ketone, cyclohexanone, 4-hydroxy-4-methyl-2 pentanone;
Methyl acetate, ethyl acetate, n-propyl acetate, n-butyl acetate, the hydroxacetic acid methyl esters, the hydroxacetic acid ethyl ester, the hydroxacetic acid n-propyl, the positive butyl ester of hydroxacetic acid, methyl lactate, ethyl lactate, lactic acid n-propyl ester, n-butyl lactate, the 3-hydroxy methyl propionate, 3-hydracrylic acid ethyl ester, 3-hydracrylic acid n-propyl, the positive butyl ester of 3-hydracrylic acid, 2-hydroxy-2-methyl methyl propionate, 2-hydroxy-2-methyl ethyl propionate, 2-hydroxy-3-methyl methyl butyrate, Methoxy Methyl Acetate, the Methoxy acetic acid ethyl ester, the Methoxy acetic acid n-propyl, the positive butyl ester of Methoxy acetic acid, the ethoxy methyl acetate, the ethoxy ethyl acetate, the ethoxy n-propyl acetate, the ethoxy n-butyl acetate, the positive propoxy methyl acetate, the positive propoxy ethyl acetate, the positive propoxy n-propyl acetate, the positive propoxy n-butyl acetate, the n-butoxy methyl acetate, the n-butoxy ethyl acetate, the n-butoxy n-propyl acetate, the n-butoxy n-butyl acetate, 2-methoxypropionic acid methyl esters, 2-methoxy propyl acetoacetic ester, 2-methoxypropionic acid n-propyl, the positive butyl ester of 2-methoxypropionic acid, 2-ethoxy-propionic acid methyl esters, the 2-ethoxyl ethyl propionate, 2-ethoxy-propionic acid n-propyl, the positive butyl ester of 2-ethoxy-propionic acid, the positive propoxy methyl propionate, the positive propoxy ethyl propionate, positive propoxy propionic acid n-propyl, the positive propoxy n-butyl propionate, 2-n-butoxy methyl propionate, 2-n-butoxy ethyl propionate, 2-n-butoxy propionic acid n-propyl, 2-n-butoxy n-butyl propionate, 3-methoxypropionic acid methyl esters, 3-methoxy propyl acetoacetic ester, 3-methoxypropionic acid n-propyl, the positive butyl ester of 3-methoxypropionic acid, 3-ethoxy-propionic acid methyl esters, the 3-ethoxyl ethyl propionate, 3-ethoxy-propionic acid n-propyl, the positive butyl ester of 3-ethoxy-propionic acid, 3-positive propoxy methyl propionate, 3-positive propoxy ethyl propionate, 3-positive propoxy propionic acid n-propyl, 3-positive propoxy n-butyl propionate, 3-n-butoxy methyl propionate, 3-n-butoxy ethyl propionate, 3-n-butoxy propionic acid n-propyl, other ester classes of 3-n-butoxy n-butyl propionate etc. etc.
In addition, the used polymerization initiator of manufacturing of [A] multipolymer is general, can use knownly, for example can enumerate 2,2 '-azo isobutyronitrile, 2 as radical polymerization initiator, 2 '-azo-(2, the 4-methyl pentane nitrile), 2,2 '-azo-(4-methoxyl-2,4-methyl pentane nitrile), 4,4 '-azo (4-cyanopentanoic acid), dimethyl-2,2 '-azo (2 Methylpropionic acid ester), 2, the azo-compound of 2 '-azo (4-methoxyl-2,4-methyl pentane nitrile) etc.; Benzoyl peroxide, lauroyl peroxide, t-butyl peroxy pivalate, 1, the organic peroxide of 1 '-two-(t-butylperoxy) cyclohexane etc.; Hydrogen peroxide etc.When using superoxide,, also can and use reductive agent as the oxidation-reduction type initiating agent as radical polymerization initiator.
[B] polymerizable unsaturated compound
As partition of the present invention polymerizable unsaturated compound with radiation sensitive resin composition, preferably acrylate that 2 officials can be above and methacrylate (below, be called " (methyl) acrylate ").
(methyl) acrylate as 2 officials energy, for example can enumerate EDIA, glycolmethacrylate, 1,6-hexane diol diacrylate, 1,6-hexane diol dimethylacrylate, 1,9-nonanediol diacrylate, 1,9-nonanediol dimethylacrylate, tetraethylene glycol diacrylate, TEG dimethylacrylate, polypropyleneglycol diacrylate, polypropylene glycol dimethacrylate, two Phenoxyethanol fluorenes diacrylate, two Phenoxyethanol fluorenes dimethylacrylates etc.
In addition, as 2 officials can the commercially available product of (methyl) acrylate, for example can enumerate ア ロ ニ Star Network ス M-210, ア ロ ニ Star Network ス M-240, ア ロ ニ Star Network ス M-6200 (more than, East Asia synthetic (strain) system), KAYARADHDDA, KAYARAD HX-220, KAYARAD R-604, UX-2201, UX-2301, UX-3204, UX-3301, UX-4101, UX-6101, UX-7101, UX-8101, MU-2100, MU-4001 (more than, Japan's chemical drug (strain) system), PVC ス コ-ト 260, PVC ス コ-ト 312, PVC ス コ-ト 335HP (more than, Osaka organic chemistry industry (strain) system) etc.
As above (methyl) acrylate of 3 officials energy, for example can enumerate trimethylolpropane triacrylate, trimethylol-propane trimethacrylate, pentaerythritol triacrylate, pentaerythritol acrylate trimethyl, tetramethylol methane tetraacrylate, pentaerythrite tetramethyl acrylate, dipentaerythritol five acrylate, dipentaerythritol pentamethyl acrylate, dipentaerythritol acrylate, dipentaerythritol hexamethyl acrylate, three (2-acrylyl oxy-ethyl) phosphate, three (2-methylacryoyloxyethyl) phosphate, as above (methyl) acrylate of 9 officials energy, can enumerate and to have straight-chain alkyl-sub-and ester ring type structure, and have the compound of the isocyanate group more than 2 and in molecule, have hydroxyl more than 1, and have 3, the compound of 4 or 5 acryloxies and/or methacryloxy reacts urethane acrylate based compound that obtains etc.
In addition, commercially available product as above (methyl) acrylate of 3 officials energy, for example can enumerate ア ロ Star Network ス M-309, ア ロ ニ Star Network ス-400, ア ロ ニ Star Network ス-402, ア ロ ニ Star Network ス-405, ア ロ ニ Star Network ス-450, ア ロ ニ Star Network ス-1310, ア ロ ニ Star Network ス-1600, ア ロ ニ Star Network ス-1960, ア ロ ニ Star Network ス-7100, ア ロ ニ Star Network ス-8030, ア ロ ニ Star Network ス-8060, ア ロ ニ Star Network ス-8100, ア ロ ニ Star Network ス-8530, ア ロ ニ Star Network ス-8560, ア ロ ニ Star Network ス-9050, ア ロ ニ Star Network ス TO-1450 (more than, East Asia synthetic (strain) system), KAYARADTMPTA, KAYARAD DPHA, KAYARAD DPCA-20, KAYARADDPCA-30, KAYARAD DPCA-60, KAYARAD DPCA-120, KAYARAD MAX-3510 (more than, Japan's chemical drug (strain) system), PVC ス コ-ト 295, PVC ス コ-ト 300, PVC ス コ-ト 360, PVC ス コ-ト GPT, PVC ス コ-ト 3PA, PVC ス コ-ト 400 (more than, Osaka organic chemistry industry (strain) is made) and, as the urethane acrylate based compound, can enumerate ニ ユ-Off ロ Application テ イ ア R-1150 (the first industrial pharmacy (strain) system), KAYARAD DPHA-40H (Japanese chemical drug (strain) system) etc.
In the present invention, polymerizable unsaturated compound can separately or mix more than 2 kinds and use.
In radiation sensitive resin composition of the present invention, the use amount of polymkeric substance unsaturated compound, with respect to [A] copolymer 1 00 weight portion, preferably 30~200 weight portions, particularly preferably be 50~140 weight portions.At this moment, if during use amount less than 30 weight portions of polymkeric substance unsaturated compound, the trend that the film limit property of the partition that then obtains and intensity have easy reduction, on the other hand, and if surpass 200 weight portions, adaptation deficiency that can getable partition.
[C] two imidazole compounds
As the used two imidazole compounds of the present invention, for example can enumerate compound with following general formula (1) expression (below, be called " two imidazole compounds (C1) ".), with the compound of following general formula (2) expression (below, be called " two imidazole compounds (C2)." etc.
[in the formula, X represents the alkyl of hydrogen atom, halogen atom, cyano group, carbon number 1~4 or the aryl of carbon number 6~9, and A represents-COO-R (wherein, R represents the alkyl of carbon number 1~4 or the aryl of carbon number 6~9) that n is 1~3 integer, and each m is 1~3 integer.]
(in the formula, X
1, X
2And X
3Represent the alkyl of hydrogen atom, halogen atom, cyano group, carbon number 1~4 or the aryl of carbon number 6~9 independently of each other, still, X
1, X
2And X
3Can not be more than 2 simultaneously as hydrogen atom.)
As two imidazole compounds, for example can enumerate 2,2 '-two (2-chlorphenyls)-4,4 ', 5,5 '-tetraphenyl double imidazole, 2,2 '-two (2-chlorphenyls)-4, the two imidazoles of 4 ', 5,5 '-four (4-ethoxy carbonyl phenyl), 2,2 '-two (2-chlorphenyls)-4, the two imidazoles of 4 ', 5,5 '-four (4-phenyloxycarbonyl phenyl), 2,2 '-two (2, the 4-dichlorophenyl)-4,4 ', 5, the two imidazoles of 5 '-four (4-ethoxy carbonyl phenyl), 2,2 '-two (2, the 4-dichlorophenyl)-4,4 ', 5, the two imidazoles of 5 '-four (4-phenyloxycarbonyl phenyl), 2,2 '-two (2,4, the 6-trichlorophenyl)-4, the two imidazoles of 4 ', 5,5 '-four (4-phenyloxycarbonyl phenyl), 2,2 '-two (2,4, the 6-trichlorophenyl)-4,4 ', 5, the two imidazoles of 5 '-four (4-phenyloxycarbonyl phenyl), 2,2 '-two (2-cyano-phenyl)-4,4 ', 5, the two imidazoles of 5 '-four (4-ethoxy carbonyl phenyl), 2,2 '-two (2-cyano-phenyl)-4,4 ', 5, the two imidazoles of 5 '-four (4-phenyloxycarbonyl phenyl), 2,2 '-two (2-aminomethyl phenyl)-4,4 ', 5, the two imidazoles of 5 '-four (4-methoxycarbonyl phenyl), 2,2 '-two (2-aminomethyl phenyl)-4,4 ', 5, the two imidazoles of 5 '-four (4-ethoxy carbonyl phenyl), 2,2 '-two (2-aminomethyl phenyl)-4,4 ', 5, the two imidazoles of 5 '-four (4-phenyloxycarbonyl phenyl), 2,2 '-two (2-ethylphenyl)-4,4 ', 5, the two imidazoles of 5 '-four (4-methoxycarbonyl phenyl), 2,2 '-two (2-ethylphenyl)-4,4 ', 5, the two imidazoles of 5 '-four (4-ethoxy carbonyl phenyl), 2,2 '-two (2-ethylphenyl)-4,4 ', 5, the two imidazoles of 5 '-four (4-phenyloxycarbonyl phenyl), 2,2 '-two (2-phenyl)-4,4 ', 5, the two imidazoles of 5 '-four (4-methoxycarbonyl phenyl), 2,2 '-two (2-phenyl)-4,4 ', 5, the two imidazoles of 5 '-four (4-ethoxy carbonyl phenyl), 2,2 '-two (2-phenyl)-4,4 ', two imidazole compounds (C1) of the two imidazoles of 5,5 '-four (4-phenyloxycarbonyl phenyl) etc.;
2,2 '-two (2, the 4-dichlorophenyl)-4,4 ', 5,5 '-tetraphenyl double imidazole, 2,2 '-two (2,4, the 6-trichlorophenyl)-4,4 ', 5,5 '-tetraphenyl double imidazole, 2,2 '-two (2, the 4-dibromo phenyl)-4,4 ', 5,5 '-tetraphenyl double imidazole, 2,2 '-two (2,4,6-tribromo phenyl)-4,4 ', 5,5 '-tetraphenyl double imidazole, 2,2 '-two (2,4-dicyano phenyl)-4,4 ', 5,5 '-tetraphenyl double imidazole, 2,2 '-two (2,4,6-tricyano phenyl)-4,4 ', 5,5 '-tetraphenyl double imidazole, 2,2 '-two (2, the 4-3,5-dimethylphenyl)-4,4 ', 5,5 '-tetraphenyl double imidazole, 2,2 '-two (2,4, the 6-trimethylphenyl)-4,4 ', 5,5 '-tetraphenyl double imidazole, 2,2 '-two (2,4-diethyl phenyl)-4,4 ', 5,5 '-tetraphenyl double imidazole, 2,2 '-two (2,4,6-triethyl phenyl)-4,4 ', 5,5 '-tetraphenyl double imidazole, 2,2 '-two (2,4-diphenyl phenyl)-4,4 ', 5,5 '-tetraphenyl double imidazole, 2,2 '-two (2,4,6-triphenyl phenyl)-4,4 ', 5, two imidazole compounds (C2) of 5 '-tetraphenyl double imidazole etc. etc.
In these pairs imidazole compound, particularly preferably be 2,2 '-two (2-chlorphenyls)-4,4 ', 5,5 '-tetraphenyl double imidazole, 2,2 '-two (2-chlorphenyl)-4,4 ', 5, the two imidazoles of 5 '-four (4-ethoxy carbonyl phenyl), 2,2 '-two (2-bromophenyl)-4,4 ', the two imidazoles of 5,5 '-four (4-ethoxy carbonyl phenyl), 2,2 '-two (2, the 4-dichlorophenyl)-4,4 ', 5,5 '-tetraphenyl double imidazole, 2,2 '-two (2, the 4-dibromo phenyl)-4,4 ', 5,5 '-tetraphenyl double imidazole, 2,2 '-two (2,4, the 6-trichlorophenyl)-4,4 ', 5,5 '-tetraphenyl double imidazole, 2,2 '-two (2,4,6-tribromo phenyl)-4,4 ', 5,5 '-tetraphenyl double imidazole etc.
Two imidazole compounds (C1) and two imidazole compound (C2) are good with respect to the dissolubility of solvent, do not generate the not foreign matter of dissolved matter, precipitate etc., and it is highly sensitive, even cut away the radioactive ray of the following wavelength of 350nm, exposure with few energy also can fully be cured reaction, simultaneously, can form do not have the losing of figure, the good partition of damaged or backspin.
In the present invention, two imidazole compounds can separately or mix more than 2 kinds and use.
In radiation sensitive resin composition of the present invention, the use amount of two imidazole compounds is, with respect to [A] copolymer 1 00 weight portion, preferably 0.1~50 weight portion, particularly preferably be 1~35 weight portion.At this moment, if during use amount less than 0.1 weight portion of two imidazole compounds, the trend that the film limit property of the partition that then obtains and intensity have easy reduction, on the other hand, if when surpassing 50 weight portions, increase leachable in the then oriented liquid crystal and trend that voltage retention is reduced easily.
[D] contains the carbonyl polymerization initiating agent
[D] of the present invention composition, have carbonyl the radiation-sensitive polymerization initiator (below, be called [D] and contain the carbonyl polymerization initiating agent.), be to have to regulate the composition that partition forms the effect of shape.
Contain the carbonyl polymerization initiating agent as [D], for example can enumerate α-two ketone of benzyl, diacetyl etc.; The acyloin class of benzoin etc.; The acyloin ethers of benzoin methyl ether, benzoin ethylether, benzoin isopropyl ether etc.; Thioxanthones, 2,4-diethyl thioxanthone, thioxanthones-4-sulfonic acid, benzophenone, 4, the benzophenone of 4 '-two (dimethylamino) benzophenone, 4,4 '-two (diethylamino) benzophenone etc.; Acetophenone, 4-dimethylamino benzoylformaldoxime, α, α '-dimethoxy acetoxy acetophenone, 2, the acetophenones of 2 '-dimethoxy-2-phenyl acetophenone, 4-methoxyacetophenone, 2-methyl [4-(methyl mercapto) phenyl]-2-morpholinyl-1-acetone, 2-benzyl-2-dimethylamino-1-(4-morpholinyl phenyl)-butanone-1 etc.; Anthraquinone, 1, the quinones of 4-naphthoquinones etc.; 2,4,6-trimethylbenzoyl diphenyl phosphine oxide, two (2,6-dimethoxy benzoyl)-2,4, the phosphine oxide class of 4-tri-methyl-amyl phosphine oxide, two (2,4, the 6-trimethylbenzoyl) phenylphosphine oxide etc. etc.
In addition, the commercially available product that contains the carbonyl polymerization initiating agent as [D], for example can enumerate IRGACURE-124, IRGACURE-149, IRGACURE-184, IRGACURE-369, IRGACURE-500, IRGACURE-651, IRGACURE-819, IRGACURE-907, IRGACURE-1700, IRGACURE-1000, IRGACURE-1800, IRGACURE-1850, IRGACURE-2959, Darocur-1173, Darocur-1116, Darocur-1664, Darocur-2959, Darocur-4043 (more than, チ バ ス ペ シ ヤ Le テ イ ケ ミ カ Le ズ society system), KAYACURE-DETX, KAYACURE-MBP, KAYACURE-DMBI, KAYACURE-EPA, KAYACURE-OA (more than, Japan's chemical drug (strain) system), LUCIRIN TPO (BASF Co.LTD system), VICURE-10, VICURE-55 (more than, STAUFFER Co.LTD system) etc.
In the present invention, [D] contains the carbonyl polymerization initiating agent and can separately or mix use more than 2 kinds.
In radiation sensitive resin composition of the present invention, with respect to [A] copolymer 1 00 weight portion, the use amount that [D] contains the carbonyl polymerization initiating agent preferably 1~50 weight portion, particularly preferably be 3~30 weight portions.At this moment, when [D] contained use amount less than 1 weight portion of carbonyl polymerization initiating agent, the film limit property and the graphics shape of the partition that obtains were easy to generate bad trend, on the other hand, if when surpassing 100 weight portions, the dimension of picture that obtains may surpass mask graph design size permissible range.
[E] has the compound of dialkyl amido
Compound in the radiation sensitive resin composition of the present invention with dialkyl amido, as long as have just being not particularly limited of effect of the two imidazole compounds of sensitization [C], but as preferred compound, for example can enumerate 4,4 '-two (dimethylamino) benzophenone, 4,4 '-two (diethylamino) benzophenone, ESCAROL 507 ethyl ester, to diethylamino ethyl benzoate, ESCAROL 507 isopentyl ester, to the aromatics of diethylamino isoamyl benzoate etc.But, as 4, the situation of 4 '-two (dimethylamino) benzophenone or 4,4 '-two (diethylamino) benzophenone is such, when the compound with dialkyl amido belongs to [D] and contains the scope of carbonyl polymerization initiating agent, use and the different compound of [D] composition.
These have in the compound of dialkyl amido, particularly preferably are 4,4 '-two (diethylamino) benzophenone.
In the present invention, the compound with dialkyl amido can separately or mix more than 2 kinds and use.
In radiation sensitive resin composition of the present invention, have with respect to [A] copolymer 1 00 weight portion dialkyl amido compound use amount preferably 0.1~50 weight portion, particularly preferably be 1~20 weight portion.At this moment, when having use amount less than 0.1 weight portion of compound of dialkyl amido, there are the film limit property and the graphics shape of the partition that obtains to be easy to generate bad trend, on the other hand,, the bad trend of easy formation graphics shape arranged if when surpassing 50 weight portions.
[F] mercaptan based compound
Mercaptan based compound in the radiation sensitive resin composition of the present invention is to have the hydroperoxyl radical effect of composition supply with to(for) [C] two imidazole compounds.
That is, [C] two imidazole compounds have the compound sensitization of dialkyl amido by [E], ftracture to produce the imidazole radicals free radical, but this moment, if when not having the mercaptan based compound, just can not express high free radical polymerization energy, the partition that often obtains is the unfavorable shape of back taper shape.; have in the compound coexistence system of dialkyl amido at [C] two imidazole compounds and [E]; by adding the mercaptan based compound; in imidazole radical, supply with the result of hydroperoxyl radical; when imidazole radical is transformed into neutral imidazoles; generation has the composition of the high sulphur free radical of polymerization energy of initiation, thus, the shape of partition can be made better positive cone-shaped.
As the mercaptan based compound, for example can enumerate 2-mercaptobenzothiazole, 2-sulfydryl benzo
The aromatic series based compound of azoles, 2-mercaptobenzimidazole, 2-sulfydryl-5-methoxyl benzo thiazole, 2-sulfydryl-5-methoxyl benzo imidazoles etc.; Single mercaptan based compound such as the aliphatics of 3-mercaptopropionic acid, 3-mercapto-propionate, 3-mercaptopropionic acid ethyl ester, 3-mercaptopropionic acid n-octyl etc.; 3,6-dioxy-1, the aliphatics multi-thiol based compound of 8-octane two mercaptan, pentaerythrite four (mercaptoacetate), pentaerythrite four (3-mercaptopropionic acid ester) etc. etc.
In radiation sensitive resin composition of the present invention, with respect to the use amount of [C] two imidazole compound 100 weight portion mercaptan based compounds preferably 0.1~50 weight portion, particularly preferably be 1~20 weight portion.At this moment, during use amount less than 0.1 weight portion of mercaptan based compound, there are the film limit property and the graphics shape of the partition that obtains to be easy to generate bad trend, on the other hand,, the bad trend of easy formation graphics shape arranged if when surpassing 50 weight portions.
Any adjuvant
In radiation sensitive resin composition of the present invention, as required, in the scope of not damaging effect of the present invention, can cooperate above-mentioned any adjuvant in addition, for example adhesive aid, surfactant, storage stability, thermotolerance improving agent etc.
Above-mentioned adhesive aid is the composition that uses for the cohesiveness of partition that improves formation and substrate.
As such adhesive aid; the functional silanes coupling agent that preferably has the reactive functional group of carboxyl, methacryl, vinyl, isocyanate group, epoxy radicals etc.; can enumerate trimethoxysilyl benzoic acid, gamma-methyl allyl acyloxypropyl trimethoxysilane, vinyltriacetoxy silane, vinyltrimethoxy silane, γ-isocyanates propyl-triethoxysilicane, γ-glycidoxypropyltrimewasxysilane, β-(3,4-epoxy radicals cyclohexyl) ethyl trimethoxy silane etc. as its example.
These adhesive aids can separately or mix more than 2 kinds and use.
The use level of adhesive aid, preferably 20 weight portions are following and then preferably below 10 weight portions with respect to [A] copolymer 1 00 weight portion.At this moment, when the use level of adhesive aid surpasses 20 weight portions, the incomplete trend of developing that is easy to generate is arranged.
Above-mentioned surfactant is the composition that uses in order to improve coating.
As such surfactant, for example preferably fluorine is surfactant, silicon-type surfactant etc.
Above-mentioned fluorine is a surfactant, preferably endways, at least one position of main chain and side chain has the compound of fluoroalkyl and/or fluorine alkylidene, can enumerate 1 as its example, 1,2,2,-tetrafluoro n-octyl (1,1,2,2 ,-tetrafluoro n-pro-pyl) ether, 1,1,2,2 ,-tetrafluoro n-octyl (n-hexyl) ether, six ethylene glycol bisthioglycolates (1,1,2,2,3,3-hexafluoro n-pentyl) ether, eight ethylene glycol bisthioglycolates (1,1,2,2-tetrafluoro normal-butyl) ether, six propylene glycol two (1,1,2,2,3,3-hexafluoro n-pentyl) ether, eight propylene glycol two (1,1,2,2-tetrafluoro normal-butyl) ether, perfluor n-dodecane sodium sulfonate, 1,1,2,2,3,3-hexafluoro n-decane, 1,1,2,2,8,8,9,9,10,10-ten fluorine n-dodecanes and, fluoroalkyl benzene sodium sulfonate class, fluoroalkyl sodium phosphate class, fluoroalkyl carboxylic acid sodium class, two glycerine four (fluoroalkyl polyoxyethylene groups ether) class, fluoroalkyl ammonium iodine compound class, the fluoroalkyl betaines, other fluoroalkyl polyoxyethylene groups ethers, perfluoroalkyl poly oxyethanol class, perfluoroalkyl alkoxy ester class, carboxylic acid fluoroalkyl ester class etc.
As fluorine is the commercially available product of surfactant, for example can enumerate B M-1000, BM-1100 (more than, BM CHEMIE society system), メ ガ Off ア Star Network F142D, メ ガ Off ア Star Network F172, メ ガ Off ア Star Network F173, メ ガ Off ア Star Network F183, メ ガ Off ア Star Network F178, メ ガ Off ア Star Network F 191, メ ガ Off ア Star Network F471, メ ガ Off ア Star Network F476 (more than, big Japanese イ Application キ chemical industry (strain) system), Off ロ ラ-De FC-170C, Off ロ ラ-De FC-171, Off ロ ラ-De F C-430, Off ロ ラ-De F C-431 (more than, Sumitomo ス リ-エ system (strain) system), サ-Off ロ Application S-112, サ-Off ロ Application S-113, サ-Off ロ Application S-131, サ-Off ロ Application S-141, サ-Off ロ Application S-145, サ-Off ロ Application S-382, サ-Off ロ Application S C-101, サ-Off ロ Application SC-102, サ-Off ロ Application S C-103, サ-Off ロ Application SC-104, サ-Off ロ Application S C-105, サ-Off ロ Application S C-106 (more than, Asahi Glass (strain) system), エ Off ト Star プ EF301, エ Off ト Star プ EF 303, エ Off ト Star プ EF352 (more than, new autumn fields changes into (strain) system), Off -ジ エ Application ト FT-100, Off -ジ エ Application ト FT-110, Off -ジ エ Application ト FT-140A, Off -ジ エ Application ト FT-150, Off -ジ エ Application ト FT-250, Off -ジ エ Application ト FT-251, Off -ジ エ Application ト FT-300, Off -ジ エ Application ト FT-310, Off -ジ エ Application ト FT-400S, Off -ジ エ Application ト FTX-218, Off -ジ エ Application ト FTX-251 (more than, (strain) ネ オ ス system) etc.
As above-mentioned silicon-type surfactant, for example can enumerate with ト-レ シ リ コ-Application DC 3PA, ト-レ シ リ コ-Application DC 7PA, ト-レ シ リ コ-Application SH11PA, ト-レ シ リ コ-Application SH21PA, ト-レ シ リ コ-Application SH28PA, ト-レ シ リ コ-Application S H29PA, ト-レ シ リ コ-Application SH30PA, ト-レ シ リ コ-Application SH-190, ト-レ シ リ コ-Application SH-193, ト-レ シ リ コ-Application SZ-6032, ト-レ シ リ コ-Application S F-8428, ト-レ シ リ コ-Application DC-57, ト-レ シ リ コ-Application DC-190 (more than, east レ ダ ウ コ-ニ Application グ (strain) system), TSF-4440, TSF-4300, TS F-4445, TS F-4446, TSF-4460, the trade name of TSF-4452 (more than, the シ リ of GE Toshiba コ-Application (strain) system) etc. is commercially available.
In addition, as the surfactant beyond above-mentioned, can enumerate the polyethylene oxide alkyl ethers class of polyoxyethylene lauryl ether, polyoxyethylene stearyl ether, polyoxyethylene oleyl ether etc.; The polyoxyethylene aryl ethers of polyoxyethylene n-octyl phenyl ether, polyoxyethylene n-nonyl phenyl ether etc.; The nonionic of the polyoxyethylene dialkyl of polyoxyethylene dilaurate, polyoxyethylene distearate etc. etc. is surfactant or organic siloxane polymer KP341 (SHIN-ETSU HANTOTAI's chemical industry (strain) system), (methyl) acrylic acid series copolymer Port リ Off ロ-No.57, Port リ Off ロ-No.95 (more than, common prosperity society chemistry (strain) system) etc.
These surfactants can separately or mix more than 2 kinds and use.
Preferably 1.0 weight portions are following and then preferably below 0.5 weight portion with respect to [A] copolymer 1 00 weight portion for the use level of surfactant.At this moment, when the use level of surfactant surpasses 1.0 weight portions, the trend of easy produced film spot is arranged.
As above-mentioned preserving stabilizer, for example can enumerate sulphur, quinones, hydroxyl ketone, polyoxy compounds, amine, nitro nitroso compound etc., more specifically can enumerate 4-metoxyphenol, N-nitroso--N-phenyl hydramine aluminium etc.
These preserving stabilizers can separately or mix more than 2 kinds and use.
Preferably 3.0 weight portions are following and then preferably below 0.5 weight portion with respect to [A] copolymer 1 00 weight portion for the use level of preserving stabilizer.At this moment, when the use level of preserving stabilizer surpassed 3.0 weight portions, possible sensitivity reduced the graphics shape deterioration.
As above-mentioned thermotolerance improving agent, for example can enumerate N-(alkoxy methyl) glycoluril compounds, N-(alkoxy methyl) melamine compound, have the compound of 2 above epoxy radicals etc.
As above-mentioned N-(alkoxy methyl) glycoluril compounds, for example can enumerate N, N, N, N-four (methoxy) glycoluril, N, N, N, N-four (ethoxyl methyl) glycoluril, N, N, N, N-four (n-propoxymethyl) glycoluril, N, N, N, N-four (isopropoxy methyl) glycoluril, N, N, N, N-four (n-butoxy methyl) glycoluril, N, N, N, N-four (tert-butoxy methyl) glycoluril etc.
In these N-(alkoxy methyl) glycoluril compounds, N preferably, N, N, N-four (methoxy) glycoluril.
As above-mentioned N-(alkoxy methyl) melamine compound, for example can enumerate N, N, N, N, N, N-six (methoxy) melamine, N, N, N, N, N, N-six (ethoxyl methyl) melamine, N, N, N, N, N, N-six (n-propoxymethyl) melamine, N, N, N, N, N, N-six (isopropoxy methyl) melamine, N, N, N, N, N, N-six (n-butoxy methyl) melamine, N, N, N, N, N, N-six (tert-butoxy methyl) melamine etc.
In these N-(alkoxy methyl) melamine compound, N preferably, N, N, N, N, N-six (methoxy) melamine as its commercially available product, for example can be enumerated ニ カ ラ Star Network N-2702, ニ カ ラ Star Network MW-30M (more than, three and chemistry (strain) system) etc.
As compound with above-mentioned epoxy radicals more than 2, for example can enumerate the ethylene glycol bisthioglycolate glycidyl ether, the diglycol diglycidyl ether, the triethylene glycol diglycidyl ether, the polyglycol diglycidyl ether, the propylene glycol diglycidyl ether, the dipropylene glycol diglycidyl ether, the tripropylene glycol diglycidyl ether, polypropylene glycol diglycidyl ether, season the pentanediol diglycidyl ether, 1,6-hexanediol diglycidyl ether, the glycerine diglycidyl ether, the trimethylolpropane tris glycidyl ether, hydrogenation bisphenol-A diglycidyl ether, bisphenol-A diglycidyl ether etc.
In addition, commercially available product as compound with the epoxy radicals more than 2, for example can enumerate エ Port ラ イ ト 40E, エ Port ラ イ ト 100E, エ Port ラ イ ト 200E, エ Port ラ イ ト 70P, エ Port ラ イ ト 200P, エ Port ラ イ ト 400P, エ Port ラ イ ト 1500NP, エ Port ラ イ ト 80MF, エ Port ラ イ ト 100MF, エ Port ラ イ ト 1600, エ Port ラ イ ト 3002, エ Port ラ イ ト 4000 (more than, common prosperity society chemistry (strain) system) etc.
These thermotolerance improving agents can separately or mix more than 2 kinds and use.
Partition radiation sensitive resin composition of the present invention preferably uses the composition solution that is dissolved in the appropriate solvent.
As above-mentioned solvent, preferably use each that can dissolve radiation sensitive resin composition of the present invention equably must composition and any adjuvant composition, and not with each composition reaction.
As such solvent, for example can enumerate:
The alcohols of methyl alcohol, ethanol etc.; The ethers of tetrahydrofuran etc.; The gylcol ether of glycol monomethyl methyl ether, ethylene glycol monomethyl ether etc.; The ethylene glycol alkyl ether acetate esters of Ethylene Glycol Methyl ether acetic acid ester, ethylene glycol monoethyl ether acetate etc.; The diglycol ethers of diglycol monotertiary methyl ether, carbiphene, diethylene glycol dimethyl ether, diglycol ethyl-methyl ether etc.;
The propylene glycol ethers of methyl proxitol, propylene glycol ethylether, propylene glycol n-propyl ether, propylene glycol n-butyl ether etc.; The propylene glycol alkyl ether acetic acid ester class of methyl proxitol acetate, propylene glycol ethylether acetic acid esters, propylene glycol n-propyl ether acetic acid esters, propylene glycol n-butyl ether acetic acid esters etc.; The propylene glycol alkyl ether propionic acid ester of methyl proxitol propionic ester, propylene glycol ethylether propionic ester, propylene glycol n-propyl ether propionic ester, propylene glycol n-butyl ether propionic ester etc.;
Toluene, dimethylbenzene etc. aromatic hydrocarbon based; The ketone of MEK, cyclohexanone, 4-hydroxy-4-methyl-2 pentanone etc.; Methyl acetate, ethyl acetate, n-propyl acetate, n-butyl acetate, 2-hydroxy-2-methyl methyl propionate, 2-hydroxy-2-methyl ethyl propionate, the hydroxacetic acid methyl esters, the hydroxacetic acid ethyl ester, the hydroxacetic acid n-propyl, the positive butyl ester of hydroxacetic acid, methyl lactate, ethyl lactate, lactic acid n-propyl ester, n-butyl lactate, the 3-hydroxy methyl propionate, 3-hydracrylic acid ethyl ester, 3-hydracrylic acid n-propyl, the positive butyl ester of 3-hydracrylic acid, 3-butoxy methyl propionate, 3-butoxy ethyl propionate, 3-butoxy propionic acid n-propyl, other ester class etc. such as 3-butoxy n-butyl propionate.
In these solvents, from dissolubility, with the reactive of each composition and the easiness of filming and forming, preferably gylcol ether, ethylene glycol alkyl ether acetate esters, diglycol ethers and other ester class.
Above-mentioned solvent can individually or mix more than 2 kinds and use.
In the present invention, in the above-mentioned solvent and then also can and use high boiling solvent.
As above-mentioned high boiling solvent, for example can enumerate N-NMF, N, dinethylformamide, N-methyl formyl aniline, N-methylacetamide, N,N-dimethylacetamide, N-Methyl pyrrolidone, dimethyl sulfoxide (DMSO), benzylisoeugenol, hexyl ether, acetonyl acetone, isophorone, caproic acid, sad, 1-octanol, 1 nonyl alcohol, benzyl alcohol, benzyl acetate, ethyl benzoate, diethy-aceto oxalate, diethyl maleate, gamma-butyrolacton, ethylene carbonate, carbonic allyl ester, phenyl Cellosolve acetic acid esters etc.
These high boiling solvents can separately or mix more than 2 kinds and use.
In addition, the composition solution of above-mentioned modulation also the millipore filter about usage aperture 0.5 μ m etc. filter the back and use.
The formation method of partition
Below, describe for the method for using radiation sensitive resin composition of the present invention to form partition of the present invention.
Partition formation method of the present invention is the operation that comprises following (i)~(iv) at least.
(i) operation of formation radiation sensitive resin composition film of the present invention on substrate.
The operation that does not (ii) contain the radioactive ray that are lower than the 350nm wavelength at least a portion exposure of this film.
The operation of the film after (iii) development exposes.
The operation that (iv) adds the film after the thermal development.
Below, illustrate successively for these each operations.
(i) operation
Form nesa coating on the one side of transparency carrier, after applying the composition solution of radiation sensitive resin composition of the present invention on this nesa coating, heating coated side (baking) forms film.
Be used for the transparency carrier that partition forms, for example can enumerate glass substrate, resin substrate etc.More specifically can enumerate the glass substrate of soda-lime glass, alkali-free glass etc.; The resin substrate that the plastics of polyethylene terephthalate, polybutylene terephthalate, polyethersulfone, polycarbonate, polyimide etc. constitute.
As the nesa coating that on the one side of transparency carrier, is provided with, can enumerate by tin oxide (SnO
2) the NESA film (registered trademark of U.S. PPG society), the indium oxide-tin oxide (In that constitute
2O
3-SnO
2) the ITO film that constitutes etc.
As the painting method of composition solution, for example can adopt suitable method such as gunite, rolling method, spin coating method.
In addition, the condition of baking, also different according to the kind of each composition, cooperation ratio etc., but usually under 70~120 ℃, about 1~15 minute.
(ii) operation
Then, exposure does not contain the radioactive ray that are lower than the 350nm wavelength in fact at least a portion of the film that forms.At this moment, when on the part of film, exposing, by the pattern mask exposure of setting.In the present invention, owing to cut away radioactive ray, can suppress to be used for the reduction in the catoptron life-span of exposure machine effectively with the high-octane 350nm of being lower than wavelength.
The radioactive ray that are used to expose can use luminous ray, ultraviolet ray, far ultraviolet etc., but preferably cut away the reflected ray that is lower than 350nm from the radioactive ray of the scope of wavelength 190~450nm.
Exposure is to calculate by the value of intensity of wavelength 365nm that illuminometer (OAI model 356, OAI Optical AssociatesInc. system) is measured the radioactive ray of exposure, normally 100~10, and 000J/m
2, preferably 1,500~3,000J/m
2
Means as the wavelength that is lower than 350nm that cuts away radioactive ray are not particularly limited, and for example can adopt the method for using optical filtering.
As above-mentioned optical filtering, for example can adopt Toshiba's glass (strain) system to see through ultraviolet ray filter " UV-35 ".
Fig. 1 represents to make the luminescent spectrum (thick line) of the mercury vapor lamp that sees through through ultraviolet filtering mirror " UV-35 " and the luminescent spectrum (fine rule of the mercury vapor lamp that do not see through.But the luminescent spectrum more than the 350nm is partly overlapping with thick line.)。The wavelength that comprises some not enough 350nm on the luminescent spectrum of Fig. 1 (thick line), but its relative intensity and accumulation area are very little can not give bad influence for life-span of the catoptron that is used for exposure machine.
(iii) operation
Then, by the film after the exposure of developing, remove part not and form the figure of setting.
As the developer solution that is used to develop, for example can use the inorganic base of NaOH, potassium hydroxide, sodium carbonate, sodium silicate, sodium methyl silicate, ammonia etc.; The Armeen class of ethamine, n-propylamine etc.; The aliphatic secondary amine of diethylamine, di-n-propylamine etc.; The aliphatic tertiary amine class of trimethylamine, methyl-diethyl-amine, dimethyl amine, triethylamine etc.; Pyrroles, piperidines, N-methyl piperidine, N-picoline, 1,8-diazabicylo [5.4.0]-7-(11) carbene, 1, the alicyclic tertiary amines of 5-diazabicylo [4.3.0]-5-nonene etc.; The aromatic tertiary amine of pyridine, trimethylpyridine, lutidines, quinoline etc.; The alkanol amine of dimethylethanolamine, methyldiethanolamine, triethanolamine etc.; The aqueous solution of the alkali compounds of the quaternary ammonium salt of Tetramethylammonium hydroxide, tetraethyl ammonium hydroxide etc. etc.
In addition, use after in the aqueous solution of above-mentioned alkali compounds, also can suitably adding the water-miscible organic solvent of methyl alcohol, ethanol etc. and/or surfactant.
As developing method, also can be any one method of emitting liquid method (liquid is contained the リ method), infusion process, spray process etc., development time is about 10~180 seconds usually at normal temperatures.
After the development, for example carry out the flowing water washing after 30~90 seconds, by pressurized air or the desirable figure of the air-dry formation of compressed nitrogen.
(iv) operation
Then, the figure that obtains is for example arrived set point of temperature, for example 100~160 ℃, stipulated time by the heating arrangement heating (afterwards baking) of hot plate, baking oven etc., for example for be 5~30 minutes on the hot plate, for being 30~180 minutes in the baking oven, the partition that can obtain stipulating.
The radiation sensitive resin composition that is used for partition formation in the past, if do not carry out above temperature heat treated about 180~200 ℃, the partition that then obtains can not be brought into play sufficient performance, but radiation sensitive resin composition of the present invention, heating-up temperature can be made than low in the past temperature, its result can not cause the flavescence or the distortion of resin substrate, the grinding patience in the time of can obtaining compression strenght, liquid crystal aligning, with the partition of all function admirables such as adherence of transparency carrier.
Liquid crystal display cells
Below, describe for liquid crystal display cells of the present invention.
Liquid crystal display cells of the present invention has the partition as above-mentioned formation.
Structure for liquid crystal display cells is not particularly limited, but it is for example shown in Figure 2, can enumerate and on transparency carrier, form chromatic filter layer and partition of the present invention, the structure of clamping 2 oriented films of liquid crystal layer configuration, opposed transparency electrode, opposed transparency carrier etc.In addition, also as shown in Figure 2, as required, also diaphragm can be set on chromatic filter layer.
And then, as shown in Figure 3, on transparency carrier, form chromatic filter layer and partition of the present invention, by oriented film and liquid crystal layer,, also can make the liquid crystal display cells of TN-TFT type with thin film transistor (TFT) (TFT) array subtend.At this moment, as required, can on Polarizer or chromatic filter layer, diaphragm be set.
Partition of the present invention forms uses radiation sensitive resin composition, even with the radioactive ray exposure that does not contain the following wavelength of 350nm in fact, also can form high resolving power, high sensitivity easily, and graphics shape, compression strenght, grinding patience, with the partition of all function admirables such as adherence of transparency carrier, in addition, when partition forms, can reduce the heating-up temperature after the development, can not cause the flavescence or the distortion of resin substrate.
Liquid crystal display cells of the present invention be have graphics shape, compression strenght, grinding patience, with the partition of all function admirables such as adherence of transparency carrier, can realize long-term high reliability.
Embodiment
Below, with embodiment and then specifically describe embodiments of the present invention.
Synthesis example 1
In the flask that possesses cooling tube, stirring machine, add 2,2 '-azo (2, the 4-methyl pentane nitrile) 5 weight portions and diglycol methyl ethyl ether 250 weight portions, then, add styrene 20 weight portions, methacrylic acid 17 weight portions, two cyclopentyl-methyl acrylate, 18 weight portions and glycidyl methacrylate 45 weight portions, after carrying out nitrogen replacement, slowly stir and the temperature of reaction solution is risen to 70 ℃, this temperature is kept carrying out polymerization in 4 hours, contained the resin solution of [A] multipolymer.The solid shape branch concentration of this resin solution is 28.4 weight %, [A] multipolymer that obtains Mw be 16,000.Should [A] multipolymer conduct " multipolymer (A-1) ".
The Mw of multipolymer (A-1) and following multipolymer (A-2) uses GPC (gel permeation chromatography) HLC-8020 (eastern ソ one (strain) system) mensuration.
Synthesis example 2
In the flask that possesses cooling tube, stirring machine, add 2,2 '-azo (2, the 4-methyl pentane nitrile) 4 weight portions and diglycol methyl ethyl ether 250 weight portions, then, add styrene 5 weight portions, methacrylic acid 16 weight portions, two cyclopentyl-methyl acrylate, 34 weight portions and glycidyl methacrylate 40 weight portions, after carrying out nitrogen replacement, and then add 1,3-butadiene 5 weight portions, slowly stir and the temperature of reaction solution is risen to 70 ℃, this temperature is kept carrying out polymerization in 4 hours, contained the resin solution of [A] multipolymer.The solid shape branch concentration of this resin solution is 28.6 weight %, and the Mw of [A] multipolymer that obtains is 15,000.Should [A] multipolymer conduct " multipolymer (A-2) ".
Embodiment 1
(I) preparation of radiation sensitive resin composition
The resin solution that is obtained by synthesis example 1 as (A) composition makes dipentaerythritol acrylate (the trade name KAYARAD DPHA that mixes in multipolymer (A-1) 100 weight portions (Gu shape branch) as [B] composition, Japan's chemical drug (strain) system) 80 weight portions, as 2 of [C] composition, 2 '-two (2, the 4-dichlorophenyl)-4,4 ', 5,5 '-tetraphenyl double imidazole, 10 weight portions, 2-methyl [4-(methyl mercapto) phenyl]-2-morpholine-1-acetone (trade name イ Le ガ キ ユ ア 907 as [D] composition, チ バ ス ペ シ ヤ Le テ イ one ケ ミ カ Le ズ society system) 15 weight portions, as 4 of [E] composition, 4 '-two (dimethylamino) benzophenone 10 weight portions, 2-mercaptobenzothiazole 5 weight portions as [F] composition, γ-Huan Yangbingyangbingjisanjiayangjiguiwan 5 weight portions as adhesive aid, FTX-218 (trade name as surfactant, (strain) ネ オ ス system) 0.5 weight portion, 4-metoxyphenol 0.5 weight portion as preserving stabilizer, be dissolved in the propylene glycol monomethyl ether, make its solid shape branch concentration become 30 weight %, millipore filter with aperture 0.5 μ m filters compositions formulated solution then.
(II) formation of partition
After using rotary jet to apply above-mentioned composition solution on the alkali-free glass substrate, on 90 ℃ hot plate, bake the film that formed thickness 6.0 μ m in 3 minutes in advance.
Then, the mask by residual 10 μ m * 10 μ m figures on the film that obtains is 250W/m with the intensity of 365nm
2, see through 10 seconds of ultraviolet exposure of Toshiba's glass (strain) system ultraviolet transmitting filters " UV-35 ".Then, after 60 seconds, washed 1 minute in development under 25 ℃ with 0.05 weight % aqueous solution of potassium hydroxide with pure water.Then, in baking oven, after under 150 ℃, baked 120 minutes, form the partition of defined.
(III) evaluation of resolution
When above-mentioned (II) forms figure, when residual figure can be differentiated as good (O), in the time of cannot differentiating, estimate as bad (*).The result who estimates is illustrated in table 2.
(IV) evaluation of sensitivity
For the figure that above-mentioned (II) obtains, the residual film ratio after the development (thickness after the development * 100/ initial stage thickness) is conduct good (O) more than 90%, is lower than at 90% o'clock, estimates as bad (*).The result who estimates is illustrated in table 2.
(V) evaluation of graphics shape
Observe the section shape of the figure that above-mentioned (II) obtain with scanning electron microscope, whether accord with A~D shown in Figure 4 and estimate.At this moment, as A or B, when the edge of figure is positive taper or vertical configuration, can be described as good as the graphics shape of partition.In contrast, sensitivity is insufficient as C, residual film ratio is low, and section size is littler than A and B, in the shape of section, when the bottom surface is the semi-convex lensing on plane, figure as partition is bad, perhaps shown in D like that, when the shape of section is the back taper bodily form, then the later stage during milled processed since figure may peel off, so be bad as the shape of partition figure.Evaluation result is illustrated in table 2.
(VI) evaluation of compression strenght
For the figure that above-mentioned (II) obtains, use slight compression testing machine (MCTM-200, (strain) Shimadzu Seisakusho Ltd.), under 23 ℃ of mensuration temperature, with plane pressure of diameter 50 μ m, the deflection the during load of mensuration adding 10mN.This value we can say that 0.5 when following compression strenght is good.Evaluation result is illustrated in table 2.
(VII) evaluation of grinding patience
Apply with the AL3046 (trade name of printing machine with liquid crystal orientating membrane liquid crystal orientating agent, JSR (strain) system) after being coated on the substrate that is formed with the figure that above-mentioned (II) obtain, 180 ℃ dry 1 hour down, form the filming of directing agent of dry film thickness 0.05 μ m.Then, on this is filmed, use the muller of the roller with coiling polyamide system cloth to carry out milled processed, the rotating speed of roller is that the translational speed of 500rpm, objective table is 1cm/ second.Estimating figure this moment has or not and is cut or peels off.Evaluation result is illustrated in table 2.
(VIII) evaluation of adaptation
Except the mask that does not use residual figure, implement in the same manner with above-mentioned (II), form cured film.Then, estimate according to its dish lattice method of the 8.5.2 in the viscosity test of JISK-5400 (1900) 8.5.This moment, its numerical table that coils its residual in lattice dish lattice of 100 was shown in the table 2.
Embodiment 2~14
Except using the composition shown in the table 1-1, prepare each composition solution in the same manner with embodiment 1 and estimate as [A]~[F] composition.Evaluation result is illustrated in table 2.
Comparative example 1~9
Except using the composition shown in the table 1-2, prepare each composition solution in the same manner with embodiment 1 and estimate as [A]~[F] composition.Evaluation result is illustrated in table 2.
In table 1-1 and table 1-2, multipolymer (A-1) and multipolymer (A-2) each composition in addition are as follows.
[B] composition
B-1: dipentaerythritol acrylate
[C] composition
C-1:2,2 '-two (2, the 4-dichlorophenyl)-4,4 ', 5,5 '-tetraphenyl double imidazole
C-2:2,2 '-two (2-chlorphenyl)-4,4 ', 5,5 '-tetraphenyl double imidazole
[D] composition
D-1:2-methyl [4-(methyl mercapto) phenyl]-2-morpholinyl-1-acetone
D-2:2-benzyl-2-dimethylamino-1-(4-morpholinyl phenyl)-butanone-1
[E] composition
E-1:4,4 '-two (dimethylamino) benzophenone
[F] composition
The F-1:2-mercaptobenzothiazoler
F-2: pentaerythrite four (mercaptoacetate)
Table 1-1
[A] composition (weight portion) | [B] composition (weight portion) | [C] composition (weight portion) | [D] composition (weight portion) | [E] composition (weight portion) | [F] composition (weight portion) | |
Embodiment 1 | A-1(100) | B-1(80) | C-1(10) | D-1(15) | E-1(10) | F-1(5) |
Embodiment 2 | A-1(100) | B-1(80) | C-1(10) | D-2(10) | E-1(10) | F-1(5) |
Embodiment 3 | A-1(100) | B-1(80) | C-1(10) | D-1(15) D-2(05) | E-1(10) | F-1(5) |
Embodiment 4 | A-1(100) | B-1(80) | C-1(10) | D-1(15) D-2(05) | E-1(10) | F-2(5) |
Embodiment 5 | A-1(100) | B-1(80) | C-2(10) | D-1(15) D-2(05) | E-1(10) | F-1(5) |
Embodiment 6 | A-1(100) | B-1(80) | C-1(10) | D-1(15) D-2(05) | E-1(10) | - |
Embodiment 7 | A-1(100) | B-1(80) | C-1(10) | D-1(15) D-2(05) | - | F-1(5) |
Embodiment 8 | A-2(100) | B-1(80) | C-1(10) | D-1(15) | E-1(10) | F-1(5) |
Embodiment 9 | A-2(100) | B-1(80) | C-1(10) | D-2(10) | E-1(10) | F-1(5) |
Embodiment 10 | A-2(100) | B-1(80) | C-1(10) | D-1(15) D-2(05) | E-1(10) | F-1(5) |
Embodiment 11 | A-2(100) | B-1(80) | C-1(10) | D-1(15) D-2(05) | E-1(10) | F-Z(5) |
Embodiment 12 | A-2(100) | B-1(80) | C-2(10) | D-1(15) D-2(05) | E-1(10) | F-1(5) |
Embodiment 13 | A-2(100) | B-1(80) | C-1(10) | D-1(15) D-2(05) | E-1(10) | - |
Embodiment 14 | A-2(100) | B-1(80) | C-1(10) | D-1(15) D-2(05) | - | F-1(5) |
Table 1-2
[A] composition (weight portion) | [B] composition (weight portion) | [C] composition (weight portion) | [D] composition (weight portion) | [E] composition (weight portion) | [F] composition (weight portion) | |
Comparative example 1 | A-1(100) | B-1(80) | C-1(10) | - | E-1(10) | F-1(5) |
Comparative example 2 | A-2(100) | B-1(80) | C-1(10) | - | E-1(10) | F-1(5) |
Comparative example 3 | A-1(100) | B-1(80) | C-2(10) | - | E-1(10) | F-1(5) |
Comparative example 4 | A-2(100) | B-1(80) | C-2(10) | - | E-1(10) | F-1(5) |
Comparative example 5 | A-1(100) | B-1(80) | - | D-1(15) D-2(05) | E-1(10) | F-1(5) |
Comparative example 6 | A-2(100) | B-1(80) | - | D-1(15) D-2(05) | E-1(10) | F-1(5) |
Comparative example 7 | A-1(100) | B-1(80) | C-1(10) | D-1(15) D-2(05) | - | - |
Comparative example 8 | A-2(100) | B-1(80) | C-1(10) | D-1(15) D-2(05) | - | - |
Comparative example 9 | A-1(100) | B-1(80) | C-2(10) | D-1(15) D-2(05) | - | - |
Table 2
Resolution | Sensitivity | Graphics shape | Compression strenght (μ m) | Grind patience | Adaptation | |
Embodiment 1 | ○ | ○ | B | 0.29 | Do not have | 100 |
Embodiment 2 | ○ | ○ | A | 0.28 | Do not have | 100 |
Embodiment 3 | ○ | ○ | A | 0.32 | Do not have | 100 |
Embodiment 4 | ○ | ○ | A | 0.27 | Do not have | 100 |
Embodiment 5 | ○ | ○ | A | 0.28 | Do not have | 100 |
Embodiment 6 | ○ | ○ | B | 0.39 | Do not have | 100 |
Embodiment 7 | ○ | ○ | B | 0.34 | Do not have | 100 |
Embodiment 8 | ○ | ○ | B | 0.29 | Do not have | 100 |
Embodiment 9 | ○ | ○ | A | 0.28 | Do not have | 100 |
|
○ | ○ | A | 0.31 | Do not have | 100 |
Embodiment 11 | ○ | ○ | A | 0.28 | Do not have | 100 |
Embodiment 12 | ○ | ○ | A | 0.28 | Do not have | 100 |
Embodiment 13 | ○ | ○ | B | 0.39 | Do not have | 100 |
Embodiment 14 | ○ | ○ | B | 0.35 | Do not have | 100 |
Comparative example 1 | ○ | ○ | D | 0.41 | Have | 100 |
Comparative example 2 | ○ | ○ | D | 0.42 | Have | 100 |
Comparative example 3 | ○ | ○ | D | 0.39 | Have | 100 |
Comparative example 4 | ○ | ○ | D | 0.43 | Have | 100 |
Comparative example 5 | ○ | × | C | 0.43 | Have | 100 |
Comparative example 6 | ○ | × | C | 0.45 | Have | 100 |
Comparative example 7 | ○ | × | C | 0.43 | Have | 100 |
Comparative example 8 | ○ | × | C | 0.45 | Have | 100 |
Comparative example 9 | ○ | × | C | 0.43 | Have | 100 |
Claims (5)
1. partition forms and uses radiation sensitive resin composition, it is characterized in that containing following composition:
[A] be unsaturated carboxylic acid and/or unsaturated carboxylic acid anhydrides (a1), (a2) contain epoxy radicals unsaturated compound and (a3) from alkyl acrylate, alkyl methacrylate, acrylic acid alicyclic ester, the alicyclic ester of methacrylic acid, the acrylic acid aryl ester, aryl methacrylate, diethyl maleate, DEF, diethyl itaconate, the acrylic acid hydroxyalkyl acrylate, methacrylic acid hydroxyl Arrcostab, aromatic ethenyl compound, vinyl cyanide, methacrylonitrile, vinyl chloride, inferior vinyl chloride, acrylamide, Methacrylamide, vinyl acetate, 1, the 3-butadiene, isoprene, 2,3-dimethyl-1,3-butadiene, N-cyclohexyl maleimide, N-phenylmaleimide, N-benzyl maleimide, N-succinimido-3-maleimide benzoic ether, N-succinimido-4-maleimide butyric ester, N-succinimido-6-maleimide capronate, copolymer 1 00 weight portion of the compound of selecting in N-succinimido-3-maleimide propionic ester and N-(9-acridinyl) maleimide;
[B] with respect to 100 weight portions [A] multipolymer be (methyl) acrylate that 2 officials of 30~200 weight portions can be above,
[C] with respect to 100 weight portions [A] multipolymer be 0.1~50 weight portion two imidazole compounds,
[D] is the radiation-sensitive polymerization initiator with carbonyl of 1~50 weight portion with respect to 100 weight portions [A] multipolymer, and
[E] is that the compound with dialkyl amido and/or [F] of 0.1~50 weight portion is the mercaptan based compound of 0.1~50 weight portion with respect to the two imidazole compounds of 100 weight portions [C] with respect to 100 weight portions [A] multipolymer,
And [C] two imidazole compounds are with the expression of following general formula (1) or general formula (2),
In the formula, X represents the alkyl of hydrogen atom, halogen atom, cyano group, carbon number 1~4 or the aryl of carbon number 6~9, and A represents-COO-R that wherein, R represents the alkyl of carbon number 1~4 or the aryl of carbon number 6~9, and n is 1~3 integer, and each m is 1~3 integer,
In the formula, X
1, X
2And X
3Represent the alkyl of hydrogen atom, halogen atom, cyano group, carbon number 1~4 or the aryl of carbon number 6~9 independently of each other, still, X
1, X
2And X
3Can not be more than 2 simultaneously as hydrogen atom.
2. partition according to claim 1 forms and uses radiation sensitive resin composition, it is characterized in that containing compound and [F] mercaptan based compound that [E] has dialkyl amido.
3. partition, it is formed with radiation sensitive resin composition by claim 1 or the described partition of claim 2 and forms.
4. the formation method of a partition is characterized in that containing at least the operation of following (1)~(4):
(1) on substrate, form the described partition of claim 1 or claim 2 form operation with the film of radiation sensitive resin composition,
(2) at least a portion of this film the exposure do not contain in fact the radioactive ray that are lower than the 350nm wavelength operation,
(3) to the film operation of developing after the exposure,
(4) operation that the film after developing is heated.
5. liquid crystal display cells, it has the described partition of claim 3.
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JP015158/04 | 2004-01-23 | ||
JP2004015158A JP2005208360A (en) | 2004-01-23 | 2004-01-23 | Radiation-sensitive resin composition for forming spacer, spacer and method for forming the same, and liquid crystal display element |
JP015158/2004 | 2004-01-23 |
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KR (1) | KR100856992B1 (en) |
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CN101432660A (en) * | 2006-05-18 | 2009-05-13 | 三菱化学株式会社 | Curable composition, cured product, color filter, and liquid crystal display device |
JP2007334324A (en) * | 2006-05-18 | 2007-12-27 | Mitsubishi Chemicals Corp | Curable composition, cured product, color filter and liquid crystal display device |
JP4952918B2 (en) * | 2007-05-23 | 2012-06-13 | Jsr株式会社 | Radiation-sensitive resin composition, spacer and protective film for liquid crystal display element, and method for forming them |
JP5293934B2 (en) * | 2007-06-13 | 2013-09-18 | Jsr株式会社 | Radiation-sensitive composition for forming colored layer, color filter, and color liquid crystal display element |
KR101121038B1 (en) * | 2008-07-01 | 2012-03-15 | 주식회사 엘지화학 | Photoresist resin composition containing a number of photo-initiators, transparent thin film layer and liquid crystal display using the same |
JP2012163735A (en) * | 2011-02-07 | 2012-08-30 | Toyo Ink Sc Holdings Co Ltd | Photosensitive resin composition, and protective film and insulating film for touch panel using the composition |
CN103688221B (en) * | 2011-07-29 | 2016-08-17 | 三洋化成工业株式会社 | Photosensitive polymer combination, solidfied material and sept |
JP6079277B2 (en) * | 2013-02-04 | 2017-02-15 | 日本ゼオン株式会社 | Radiation sensitive resin composition and electronic component |
KR102329947B1 (en) * | 2017-12-22 | 2021-11-22 | 동우 화인켐 주식회사 | Photosensitive resin composition and insulation pattern formed from the same |
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JPH11327150A (en) * | 1998-03-17 | 1999-11-26 | Mitsubishi Chemical Corp | Positive photoresist composition |
JP2001174621A (en) * | 1999-12-16 | 2001-06-29 | Nippon Kayaku Co Ltd | Resin composition, film and cured substance thereof |
JP2003066604A (en) * | 2001-08-28 | 2003-03-05 | Jsr Corp | Radiation sensitive resin composition for spacer, spacer and liquid crystal display element |
JP2003107703A (en) * | 2001-09-19 | 2003-04-09 | Qimei Industry Co Ltd | Photosensitive resin composition for spacer of liquid crystal display |
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JPH09208611A (en) * | 1996-02-06 | 1997-08-12 | Japan Synthetic Rubber Co Ltd | Phosphor-dispersed, radiation-sensitive composition |
JP2001154206A (en) | 1999-11-25 | 2001-06-08 | Jsr Corp | Radiation sensitive resin composition for spacer, spacer and liquid crystal display element |
JP2002278064A (en) * | 2001-03-15 | 2002-09-27 | Jsr Corp | Radiation sensitive resin composition, spacer for display panel and display panel |
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2004
- 2004-01-23 JP JP2004015158A patent/JP2005208360A/en active Pending
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2005
- 2005-01-10 TW TW094100634A patent/TWI371655B/en not_active IP Right Cessation
- 2005-01-11 CN CNB200510000493XA patent/CN100428027C/en not_active Expired - Fee Related
- 2005-01-21 KR KR1020050005692A patent/KR100856992B1/en active IP Right Grant
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11327150A (en) * | 1998-03-17 | 1999-11-26 | Mitsubishi Chemical Corp | Positive photoresist composition |
JP2001174621A (en) * | 1999-12-16 | 2001-06-29 | Nippon Kayaku Co Ltd | Resin composition, film and cured substance thereof |
JP2003066604A (en) * | 2001-08-28 | 2003-03-05 | Jsr Corp | Radiation sensitive resin composition for spacer, spacer and liquid crystal display element |
JP2003107703A (en) * | 2001-09-19 | 2003-04-09 | Qimei Industry Co Ltd | Photosensitive resin composition for spacer of liquid crystal display |
JP2003202667A (en) * | 2002-01-08 | 2003-07-18 | Asahi Kasei Corp | Photosensitive resin composition |
Also Published As
Publication number | Publication date |
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KR20050076753A (en) | 2005-07-27 |
TW200525297A (en) | 2005-08-01 |
CN1645220A (en) | 2005-07-27 |
JP2005208360A (en) | 2005-08-04 |
TWI371655B (en) | 2012-09-01 |
KR100856992B1 (en) | 2008-09-04 |
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