CN100427879C - 波纹缺陷检查掩模、波纹缺陷检查装置及方法、以及光掩模的制造方法 - Google Patents
波纹缺陷检查掩模、波纹缺陷检查装置及方法、以及光掩模的制造方法 Download PDFInfo
- Publication number
- CN100427879C CN100427879C CNB2005100758119A CN200510075811A CN100427879C CN 100427879 C CN100427879 C CN 100427879C CN B2005100758119 A CNB2005100758119 A CN B2005100758119A CN 200510075811 A CN200510075811 A CN 200510075811A CN 100427879 C CN100427879 C CN 100427879C
- Authority
- CN
- China
- Prior art keywords
- defect
- moire
- pattern
- moiré
- patterns
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/44—Testing or measuring features, e.g. grid patterns, focus monitors, sawtooth scales or notched scales
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/7065—Defects, e.g. optical inspection of patterned layer for defects
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/706843—Metrology apparatus
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
- H10P72/0616—Monitoring of warpages, curvatures, damages, defects or the like
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
- H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
- H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Biochemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Health & Medical Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Testing Of Optical Devices Or Fibers (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004159765A JP4480001B2 (ja) | 2004-05-28 | 2004-05-28 | ムラ欠陥検査マスク、ムラ欠陥検査装置及び方法、並びにフォトマスクの製造方法 |
| JP2004159765 | 2004-05-28 | ||
| JP2004-159765 | 2004-05-28 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1702429A CN1702429A (zh) | 2005-11-30 |
| CN100427879C true CN100427879C (zh) | 2008-10-22 |
Family
ID=35480202
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2005100758119A Expired - Fee Related CN100427879C (zh) | 2004-05-28 | 2005-05-30 | 波纹缺陷检查掩模、波纹缺陷检查装置及方法、以及光掩模的制造方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US7538867B2 (enExample) |
| JP (1) | JP4480001B2 (enExample) |
| KR (1) | KR100677692B1 (enExample) |
| CN (1) | CN100427879C (enExample) |
| TW (1) | TWI263772B (enExample) |
Families Citing this family (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4583155B2 (ja) * | 2004-12-13 | 2010-11-17 | Hoya株式会社 | 欠陥検査方法及びシステム、並びにフォトマスクの製造方法 |
| US20070174012A1 (en) * | 2006-01-25 | 2007-07-26 | Badger Karen D | Method Of Determining Photomask Inspection Capabilities |
| JP4831607B2 (ja) * | 2006-03-31 | 2011-12-07 | Hoya株式会社 | パターン欠陥検査方法及びフォトマスクの製造方法 |
| JP4771871B2 (ja) * | 2006-06-15 | 2011-09-14 | Hoya株式会社 | パターン欠陥検査方法、パターン欠陥検査用テストパターン基板、及びパターン欠陥検査装置、並びにフォトマスクの製造方法、及び表示デバイス用基板の製造方法 |
| KR101587176B1 (ko) * | 2007-04-18 | 2016-01-20 | 마이크로닉 마이데이타 에이비 | 무라 검출 및 계측을 위한 방법 및 장치 |
| SG149763A1 (en) * | 2007-07-12 | 2009-02-27 | Applied Materials Israel Ltd | Method and system for evaluating an object that has a repetitive pattern |
| US7940386B1 (en) * | 2007-07-13 | 2011-05-10 | Kla-Tencor Corporation | Scatterometry target employing non-periodic defect features to enhance or optimize target sensitivity to a parameter of interest |
| US20090199152A1 (en) * | 2008-02-06 | 2009-08-06 | Micronic Laser Systems Ab | Methods and apparatuses for reducing mura effects in generated patterns |
| JP2010019639A (ja) * | 2008-07-09 | 2010-01-28 | Lasertec Corp | ムラ検出装置及びパターン検査装置 |
| JP5428410B2 (ja) * | 2009-03-11 | 2014-02-26 | 凸版印刷株式会社 | フォトマスクおよび描画精度評価方法 |
| JP5556071B2 (ja) * | 2009-07-09 | 2014-07-23 | 凸版印刷株式会社 | 評価用パターンを形成したフォトマスクおよびムラ検査装置の性能評価方法 |
| JP4942800B2 (ja) * | 2009-08-18 | 2012-05-30 | 株式会社ニューフレアテクノロジー | 検査装置 |
| JP5866912B2 (ja) * | 2011-09-16 | 2016-02-24 | 凸版印刷株式会社 | パターンの描画条件導出方法及びパターン描画装置 |
| US8780097B2 (en) | 2011-10-20 | 2014-07-15 | Sharp Laboratories Of America, Inc. | Newton ring mura detection system |
| EP2972589B1 (en) | 2013-03-12 | 2017-05-03 | Micronic Mydata AB | Mechanically produced alignment fiducial method and alignment system |
| WO2014140047A2 (en) | 2013-03-12 | 2014-09-18 | Micronic Mydata AB | Method and device for writing photomasks with reduced mura errors |
| CN104914133B (zh) * | 2015-06-19 | 2017-12-22 | 合肥京东方光电科技有限公司 | 摩擦缺陷检测装置 |
| CN105241638A (zh) * | 2015-09-09 | 2016-01-13 | 重庆平伟光电科技有限公司 | 基于视觉的led模块亮度均匀性快速检测方法 |
| CN105306843B (zh) * | 2015-10-20 | 2018-05-25 | 凌云光技术集团有限责任公司 | 一种图像传感器的坏点处理方法及系统 |
| KR102418581B1 (ko) | 2015-10-21 | 2022-07-08 | 삼성전자주식회사 | 패턴 생성 방법 및 이를 수행하기 위한 패턴 발생기 |
| CN106802523B (zh) * | 2017-01-25 | 2019-10-29 | 星源电子科技(深圳)有限公司 | 修复液晶面板显性横向线性不良的方法 |
| CN110416103B (zh) * | 2018-04-28 | 2021-09-28 | 上海微电子装备(集团)股份有限公司 | 一种残胶标准片及其制备方法 |
| CN109739072B (zh) * | 2019-02-22 | 2021-02-09 | 深圳市路维光电股份有限公司 | 光罩曝光控制方法 |
| CN109814328B (zh) * | 2019-03-28 | 2022-06-10 | 京东方科技集团股份有限公司 | 虚拟掩膜板、掩膜板及其制作方法 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19948190A1 (de) * | 1999-10-06 | 2001-04-12 | Gpp Chemnitz Ges Fuer Prozesre | Anordnung zur Charakterisierung von Unregelmässigkeiten auf ebenen und transparenten Oberflächen von Gegenständen, bspw. von einer Kittschicht |
| CN1365445A (zh) * | 2000-03-24 | 2002-08-21 | 奥林巴斯光学工业株式会社 | 缺陷检测装置 |
| JP2003297888A (ja) * | 2002-03-26 | 2003-10-17 | Isoa Inc | 光学的検査方法及び光学的検査システム |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5004340A (en) * | 1988-04-27 | 1991-04-02 | Hewlett-Packard Company | Calibration target for surface analysis scanner systems |
| JP3237928B2 (ja) * | 1992-12-04 | 2001-12-10 | 株式会社東芝 | パターン検査方法及び装置 |
| US5214486A (en) * | 1991-12-12 | 1993-05-25 | Hoya Micro Mask, Inc. | Monitor plate for automatic particle detection system |
| US5585211A (en) * | 1995-02-06 | 1996-12-17 | Firstein; Leon A. | Fabrication and use of sub-micron dimensional standard |
| US5917935A (en) * | 1995-06-13 | 1999-06-29 | Photon Dynamics, Inc. | Mura detection apparatus and method |
| US5898491A (en) * | 1997-03-28 | 1999-04-27 | Hitachi Electronics Engineering Co. Ltd. | Surface defect test method and surface defect tester |
| US6154561A (en) * | 1997-04-07 | 2000-11-28 | Photon Dynamics, Inc. | Method and apparatus for detecting Mura defects |
| JPH10300447A (ja) | 1997-04-23 | 1998-11-13 | K L Ee Akurotetsuku:Kk | 表面パターンむら検出方法及び装置 |
| US6048649A (en) * | 1998-04-30 | 2000-04-11 | International Business Machines Corporation | Programmed defect mask with defects smaller than 0.1 μm |
| WO2001041068A1 (fr) * | 1999-11-29 | 2001-06-07 | Olympus Optical Co., Ltd. | Systeme de detection de defaut |
| US6482557B1 (en) * | 2000-03-24 | 2002-11-19 | Dupont Photomasks, Inc. | Method and apparatus for evaluating the runability of a photomask inspection tool |
| US6936835B2 (en) * | 2000-09-21 | 2005-08-30 | Hitachi, Ltd. | Method and its apparatus for inspecting particles or defects of a semiconductor device |
| JP3468755B2 (ja) * | 2001-03-05 | 2003-11-17 | 石川島播磨重工業株式会社 | 液晶駆動基板の検査装置 |
| JP4038356B2 (ja) * | 2001-04-10 | 2008-01-23 | 株式会社日立製作所 | 欠陥データ解析方法及びその装置並びにレビューシステム |
| US7113629B2 (en) * | 2001-04-11 | 2006-09-26 | Dainippon Screen Mfg. Co., Ltd. | Pattern inspecting apparatus and method |
| US7126681B1 (en) * | 2002-04-23 | 2006-10-24 | Kla-Tencor Technologies Corporation | Closed region defect detection system |
| JP2003315284A (ja) * | 2002-04-24 | 2003-11-06 | Mitsubishi Electric Corp | パターン検査装置の感度調整方法 |
| US6850321B1 (en) * | 2002-07-09 | 2005-02-01 | Kla-Tencor Technologies Corporation | Dual stage defect region identification and defect detection method and apparatus |
| JP4480009B2 (ja) * | 2004-12-06 | 2010-06-16 | Hoya株式会社 | 欠陥検査装置及び方法、並びにフォトマスクの製造方法 |
-
2004
- 2004-05-28 JP JP2004159765A patent/JP4480001B2/ja not_active Expired - Fee Related
-
2005
- 2005-05-25 KR KR1020050044164A patent/KR100677692B1/ko not_active Expired - Fee Related
- 2005-05-27 TW TW094117429A patent/TWI263772B/zh not_active IP Right Cessation
- 2005-05-30 CN CNB2005100758119A patent/CN100427879C/zh not_active Expired - Fee Related
- 2005-05-31 US US11/139,970 patent/US7538867B2/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19948190A1 (de) * | 1999-10-06 | 2001-04-12 | Gpp Chemnitz Ges Fuer Prozesre | Anordnung zur Charakterisierung von Unregelmässigkeiten auf ebenen und transparenten Oberflächen von Gegenständen, bspw. von einer Kittschicht |
| CN1365445A (zh) * | 2000-03-24 | 2002-08-21 | 奥林巴斯光学工业株式会社 | 缺陷检测装置 |
| JP2003297888A (ja) * | 2002-03-26 | 2003-10-17 | Isoa Inc | 光学的検査方法及び光学的検査システム |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20060048094A (ko) | 2006-05-18 |
| JP2005338620A (ja) | 2005-12-08 |
| JP4480001B2 (ja) | 2010-06-16 |
| TW200602616A (en) | 2006-01-16 |
| KR100677692B1 (ko) | 2007-02-02 |
| US20050280805A1 (en) | 2005-12-22 |
| US7538867B2 (en) | 2009-05-26 |
| CN1702429A (zh) | 2005-11-30 |
| TWI263772B (en) | 2006-10-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20081022 Termination date: 20140530 |