CN100421218C - 具有自行对准接触窗的半导体元件及其制造方法 - Google Patents
具有自行对准接触窗的半导体元件及其制造方法 Download PDFInfo
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- CN100421218C CN100421218C CNB2005100655803A CN200510065580A CN100421218C CN 100421218 C CN100421218 C CN 100421218C CN B2005100655803 A CNB2005100655803 A CN B2005100655803A CN 200510065580 A CN200510065580 A CN 200510065580A CN 100421218 C CN100421218 C CN 100421218C
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 46
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 75
- 238000002955 isolation Methods 0.000 claims abstract description 68
- 238000000034 method Methods 0.000 claims abstract description 65
- 239000004020 conductor Substances 0.000 claims abstract description 8
- 239000000463 material Substances 0.000 claims description 38
- 238000000059 patterning Methods 0.000 claims description 37
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 25
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 21
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 21
- 239000000377 silicon dioxide Substances 0.000 claims description 16
- 125000006850 spacer group Chemical group 0.000 claims description 11
- 230000015572 biosynthetic process Effects 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 239000002253 acid Substances 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 239000010410 layer Substances 0.000 description 90
- 239000011229 interlayer Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 239000003989 dielectric material Substances 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 238000003701 mechanical milling Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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Abstract
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Claims (16)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CNB2005100655803A CN100421218C (zh) | 2005-04-18 | 2005-04-18 | 具有自行对准接触窗的半导体元件及其制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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CNB2005100655803A CN100421218C (zh) | 2005-04-18 | 2005-04-18 | 具有自行对准接触窗的半导体元件及其制造方法 |
Publications (2)
Publication Number | Publication Date |
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CN1855371A CN1855371A (zh) | 2006-11-01 |
CN100421218C true CN100421218C (zh) | 2008-09-24 |
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CNB2005100655803A Active CN100421218C (zh) | 2005-04-18 | 2005-04-18 | 具有自行对准接触窗的半导体元件及其制造方法 |
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CN (1) | CN100421218C (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US12000552B2 (en) | 2019-01-18 | 2024-06-04 | Kyocera Sld Laser, Inc. | Laser-based fiber-coupled white light system for a vehicle |
TWI701789B (zh) * | 2019-07-23 | 2020-08-11 | 力晶積成電子製造股份有限公司 | 半導體結構及其製造方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1349255A (zh) * | 2000-10-16 | 2002-05-15 | 联华电子股份有限公司 | 自行对准位线接触窗与节点接触窗制造方法 |
CN1365137A (zh) * | 2001-01-11 | 2002-08-21 | 世界先进积体电路股份有限公司 | 一种在半导体基底上形成自行对准的接触窗结构的方法 |
JP2003045968A (ja) * | 2001-07-04 | 2003-02-14 | Samsung Electronics Co Ltd | 半導体素子のコンタクト形成方法及びそれにより製造された半導体メモリ素子 |
US20040051183A1 (en) * | 2002-09-18 | 2004-03-18 | Promos Technologies, Inc. | Method of forming self-aligned contact structure with locally etched gate conductive layer |
US20040079984A1 (en) * | 2002-10-25 | 2004-04-29 | Hsuan-Ling Kao | Polysilicon self-aligned contact and a polysilicon common source line and method of forming the same |
CN1549306A (zh) * | 2003-05-09 | 2004-11-24 | 旺宏电子股份有限公司 | 自行对准接触窗开口/无边界接触窗开口的结构及形成方法 |
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2005
- 2005-04-18 CN CNB2005100655803A patent/CN100421218C/zh active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1349255A (zh) * | 2000-10-16 | 2002-05-15 | 联华电子股份有限公司 | 自行对准位线接触窗与节点接触窗制造方法 |
CN1365137A (zh) * | 2001-01-11 | 2002-08-21 | 世界先进积体电路股份有限公司 | 一种在半导体基底上形成自行对准的接触窗结构的方法 |
JP2003045968A (ja) * | 2001-07-04 | 2003-02-14 | Samsung Electronics Co Ltd | 半導体素子のコンタクト形成方法及びそれにより製造された半導体メモリ素子 |
US20040051183A1 (en) * | 2002-09-18 | 2004-03-18 | Promos Technologies, Inc. | Method of forming self-aligned contact structure with locally etched gate conductive layer |
US20040079984A1 (en) * | 2002-10-25 | 2004-04-29 | Hsuan-Ling Kao | Polysilicon self-aligned contact and a polysilicon common source line and method of forming the same |
CN1549306A (zh) * | 2003-05-09 | 2004-11-24 | 旺宏电子股份有限公司 | 自行对准接触窗开口/无边界接触窗开口的结构及形成方法 |
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CN1855371A (zh) | 2006-11-01 |
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Owner name: POWERCHIP TECHNOLOGY CO., LTD. Free format text: FORMER NAME: POWERCHIP SEMICONDUCTOR CORP. |
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Address after: Hsinchu Science Park, Taiwan, China Patentee after: Powerchip Technology Corp. Address before: Hsinchu City, Taiwan, China Patentee before: Powerchip Semiconductor Corp. |
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Effective date of registration: 20190626 Address after: Hsinchu Science Park, Taiwan, China Patentee after: Powerchip Technology Corp. Address before: Hsinchu Science Park, Taiwan, China Patentee before: Powerchip Technology Corp. |
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Effective date of registration: 20200529 Address after: Hsinchu Science Industrial Park, Taiwan, China Patentee after: Powerchip Technology Corp. Address before: Hsinchu Science Industrial Park, Taiwan, China Patentee before: Powerchip Technology Corp. |
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Effective date of registration: 20200915 Address after: No. 88 xifeihe Road, Hefei Comprehensive Bonded Zone, Xinzhan District, Hefei, Anhui Province Patentee after: HEFEI JINGHE INTEGRATED CIRCUIT Co.,Ltd. Address before: Hsinchu Science Industrial Park, Taiwan, China Patentee before: Powerchip Technology Corp. |
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CP01 | Change in the name or title of a patent holder | ||
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Address after: 230012 No.88, xifeihe Road, Hefei comprehensive free trade zone, Xinzhan District, Hefei City, Anhui Province Patentee after: Nexchip Semiconductor Corporation Address before: 230012 No.88, xifeihe Road, Hefei comprehensive free trade zone, Xinzhan District, Hefei City, Anhui Province Patentee before: HEFEI JINGHE INTEGRATED CIRCUIT Co.,Ltd. |