CN100414647C - 一种对flash内部单元进行测试的方法 - Google Patents
一种对flash内部单元进行测试的方法 Download PDFInfo
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- CN100414647C CN100414647C CNB2003101136284A CN200310113628A CN100414647C CN 100414647 C CN100414647 C CN 100414647C CN B2003101136284 A CNB2003101136284 A CN B2003101136284A CN 200310113628 A CN200310113628 A CN 200310113628A CN 100414647 C CN100414647 C CN 100414647C
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- 238000000034 method Methods 0.000 title claims abstract description 19
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- 238000012360 testing method Methods 0.000 abstract description 25
- 238000010998 test method Methods 0.000 abstract description 18
- 230000008878 coupling Effects 0.000 description 13
- 238000010168 coupling process Methods 0.000 description 13
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CNB2003101136284A CN100414647C (zh) | 2003-11-13 | 2003-11-13 | 一种对flash内部单元进行测试的方法 |
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CNB2003101136284A CN100414647C (zh) | 2003-11-13 | 2003-11-13 | 一种对flash内部单元进行测试的方法 |
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CN1617262A CN1617262A (zh) | 2005-05-18 |
CN100414647C true CN100414647C (zh) | 2008-08-27 |
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CNB2003101136284A Expired - Fee Related CN100414647C (zh) | 2003-11-13 | 2003-11-13 | 一种对flash内部单元进行测试的方法 |
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Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
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CN100465910C (zh) * | 2006-06-02 | 2009-03-04 | 上海思必得通讯技术有限公司 | 对产品中闪存数据的防错、纠错方法 |
CN100465909C (zh) * | 2006-06-02 | 2009-03-04 | 上海思必得通讯技术有限公司 | 产品中闪存初始化过程遍历数据进行查错的方法 |
CN103165194B (zh) * | 2011-12-16 | 2017-05-24 | 天津中兴智联科技有限公司 | 快速检测大容量NOR Flash的方法及装置 |
US9032264B2 (en) * | 2013-03-21 | 2015-05-12 | Kabushiki Kaisha Toshiba | Test method for nonvolatile memory |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6243839B1 (en) * | 1996-01-22 | 2001-06-05 | Micron Technology, Inc. | Non-volatile memory system including apparatus for testing memory elements by writing and verifying data patterns |
US20010052093A1 (en) * | 2000-05-02 | 2001-12-13 | Japan Aviation Electronics Industry Limited | Memory testing method and memory testing apparatus |
US20020054528A1 (en) * | 2000-08-11 | 2002-05-09 | Makoto Tabata | Semiconductor memory testing method and apparatus |
JP2002202350A (ja) * | 2000-12-28 | 2002-07-19 | Advantest Corp | 半導体試験装置 |
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6243839B1 (en) * | 1996-01-22 | 2001-06-05 | Micron Technology, Inc. | Non-volatile memory system including apparatus for testing memory elements by writing and verifying data patterns |
US20010052093A1 (en) * | 2000-05-02 | 2001-12-13 | Japan Aviation Electronics Industry Limited | Memory testing method and memory testing apparatus |
US20020054528A1 (en) * | 2000-08-11 | 2002-05-09 | Makoto Tabata | Semiconductor memory testing method and apparatus |
JP2002202350A (ja) * | 2000-12-28 | 2002-07-19 | Advantest Corp | 半導体試験装置 |
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Effective date of registration: 20201203 Address after: 225700 No.1 science and Technology Park, Zhangguo Town, Xinghua City, Taizhou City, Jiangsu Province Patentee after: Jiangsu Shuangjin New Material Co.,Ltd. Address before: 510640 Unit 2414-2416, Main Building, No. 371 Wushan Road, Tianhe District, Guangzhou City, Guangdong Province Patentee before: GUANGDONG GAOHANG INTELLECTUAL PROPERTY OPERATION Co.,Ltd. Effective date of registration: 20201203 Address after: 510640 Unit 2414-2416, Main Building, No. 371 Wushan Road, Tianhe District, Guangzhou City, Guangdong Province Patentee after: GUANGDONG GAOHANG INTELLECTUAL PROPERTY OPERATION Co.,Ltd. Address before: 518129 Bantian HUAWEI headquarters office building, Longgang District, Guangdong, Shenzhen Patentee before: HUAWEI TECHNOLOGIES Co.,Ltd. |
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