CN100385631C - 用于电化学机械抛光的抛光垫 - Google Patents
用于电化学机械抛光的抛光垫 Download PDFInfo
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Abstract
本发明提供用于电化学机械抛光的抛光垫。该垫包括覆盖在导电基片上的多孔聚合物层，该多孔聚合物层具有少于1.5mm的厚度。
Description
发明背景
本发明总体上涉及用于化学机械抛光(CMP)的抛光垫，特别地，本发明涉及用于电化学机械抛光(ECMP)的抛光垫，包括用于此的方法和系统。
在集成电路和其它电子设备的制造中，多层导体、半导体和介电材料被沉积在半导体晶片的表面上，或从该表面上除去。导体、半导体和介电材料的薄层通过许多沉积技术进行沉积。常见的沉积技术包括物理气相沉积(PVD，也称为溅射)、化学气相沉积(CVD)、等离子体增强的化学气相沉积(PECVD)和电化学喷镀(ECP)。
当材料层被循序地沉积和去除时，晶片的最上层表面变得不平。因为后续的半导体加工(如平版印刷)要求晶片有一个平的表面，所以晶片需要被取平。取平(planarization)对除去不需要的表面地势和表面缺陷如粗糙表面、成块材料、晶格损伤、划痕和污染层或材料有用。
CMP是用于取平基片如半导体晶片的一项常见技术。在常规CMP中，将晶片载体或抛光头安装在载体组件中，并布置成接触CMP装置中的抛光垫(如IC1000TM和0XP4000TM，Rohm and Haas EclectronicMaterials CMP，Inc.of Newark，DE)。该载体组件向晶片提供可控压力，将晶片压在抛光垫上。该垫可选地通过外部驱动力(如电机)而相对于晶片移动(如旋转)。与此同时，抛光流体(如浆液或反应性液体)在该抛光垫上流动，并流入晶片和抛光垫之间的空隙中。由此，该晶片表面通过垫表面和抛光流体之间的化学和机械作用而被抛光和取平。
现在，集成电路(IC)制造中需求布线互连的更高密度，这必然需要更精细的导体特征和/或间隔。此外，更多地使用着采用多传导层和具有低介电常数介电体的镶嵌工艺的IC制造技术。这类的绝缘体趋向于比常规介电材料更不机械坚固。在利用这些技术制造IC时，对各种层的取平是IC制造工艺中的一个关键步骤。不幸的是，因为这些层不能承受抛光期间的机械应力和热量集结，CMP的机械方面已经达到了其取平这类IC基片能力的极限。特别地，由于因被抛光基片和抛光垫之间物理接触而引起的摩擦力，CMP期间将发生下层盖和介电材料的层离和破裂。除该摩擦力之外，物理接触还产生不希望的过量热，这提供了例如差的抛光效果。
为了减轻诸如所述与CMP相关的有害机械效果，一种方法就是进行ECMP。ECMP是一种受控的电化学溶解方法，用于使具有金属层的基片取平。取平的机理是通过用所加电压电离金属而实现基片表面上金属(如铜)的扩散-受控吸附和溶解。在进行ECMP时，必须在基片和抛光垫之间建立电势，以实现金属原子从基片金属层的电扩散。这能通过例如在基片载体(阳极)和压盘(阴极)之间提供电流而得以实现。
Jacobsen等人在美国专利No.3,504,457中公开了一种用于抛光半导体晶片的堆叠垫，其具有覆盖在惰性层35上的多孔聚合物(poromeric)抛光层20。不幸的是，惰性层35起到了使粘合剂40与抛光层20和浆料绝缘隔离的作用。换言之，惰性层35具有差的电导率，对用于ECMP无效。此外，惰性层35具有差的热导率，将如上面所讨论的那样因过量的热量集结而受损。因此，所需的是一种克服上述不足的抛光垫。即，所需的是一种能提供改进的电和热容量和控制的用于ECMP的抛光垫。
附图概述
图1图示说明了本发明抛光垫的一个示例性实施方案。
图2图示说明了本发明抛光垫的另一个示例性实施方案。
图3图示说明了本发明抛光垫的还有一个示例性实施方案。
图4图示说明了使用本发明抛光垫的一个ECMP系统。
发明内容
第一方面，本发明提供了一种用于电化学机械抛光的抛光垫，该垫包括：覆盖在导电基片上的多孔聚合物层，该多孔聚合物层具有少于1.5mm的厚度。
第二方面，本发明提供了一种用于电化学机械抛光的抛光垫，该垫包括：多孔聚合物层，其具有少于1.5mm的厚度，且覆盖在导电基片上，其中该导电基片覆盖柔性基片。
第三方面，本发明提供了一种用于电化学机械抛光的抛光垫，该垫包括：覆盖在形成电路的柔性基片上的多孔聚合物抛光层，该多孔聚合物抛光层具有少于1.5mm的厚度。
第四方面，本发明提供了一种进行电化学机械抛光工件的方法，该方法包括：提供抛光垫，该抛光垫具有覆盖在导电基片上的多孔聚合物层，该多孔聚合物层具有少于1.5mm的厚度；在工件和多孔聚合物层之间提供电解抛光流体；向该工件提供电流；和将工件压紧在多孔聚合物层上，同时至少移动抛光垫或工件。
发明详述
现在参照附图，图1图示说明了本发明的抛光垫10，它包括覆盖在导电基片5的顶面4上的多孔聚合物层3。如此处所限定，“多孔”聚合物层是含有室或孔6的聚合物层。该“多孔”聚合物层常被称为“多孔聚合物(poromeric)”或者“多孔聚合物的抛光层”。本发明中，导电基片5充当一个电极(阴极)，其能够和导电物质(如载体基片(阳极))电连通。本发明的导电基片5具有良好的电和热传导率，以促进ECMP工艺。请注意，尽管是依据化学机械抛光(例如电化学机械抛光)的特定用途来描述本发明，但本发明同样适用于需要改进电和热传导率的任何化学机械抛光。如下面所讨论的，可提供一种可选的压敏粘合剂2，以将抛光垫10粘着在ECMP装置的压盘上。
多孔聚合物层3的形成可通过在导电基片5上涂敷一种聚合物(如弹性体聚合物)在适当溶剂(如水/N，N-二甲基甲酰胺)中的粘性溶液。聚合物的粘性溶液可流过例如水，以使聚合物在导电基片5上原位凝固。之后，可用水洗涤该多孔聚合物层3，然后干燥除去任何残留溶剂。非必要地，可用常规方法磨光该多孔聚合物层3的外表皮，以形成一个具有暴露、多孔结构的抛光表面24。此外，该抛光表面24根据需要可被非必要地打孔、开槽或形成织物构造。
室6可具有从数微米至数百微米的直径，例如100～325孔/平方毫米。典型地，用称为“孔计数”的每单元面积中的孔数描述抛光表面。为了这一说明的目的，孔计数指每平方毫米内50X光学放大可检测到的平均孔数。用于计数和处理孔数据的计算机软件的一个具体实例为Image-Pro Plus Software，Version 4.1.0.1。该孔计数和(平均)孔直径成比例，即，孔计数越高，平均孔直径越小。室6的壁能是实心的，但更典型地，该壁由微孔海绵形成。
由于凝固工艺的本质，室6在更深地渗透入材料时趋向于直径增加。而且，一层薄表皮层(未示出)形成在多孔聚合物层3的上表面上。位于层3的上表面处或附近的孔直径比下面的室直径相对较小，而且当材料在磨光期间被从层3的上表面除去时，该孔直径变得更大。类似地，位于(初始)表面处或附近的孔计数大于垫被磨去以创建新的上表面时。例如，初始表面处或附近的孔计数可为500～10,000孔/平方毫米。
顶面4可非必要地被处理，以促进多孔聚合物层3粘着在导电基片5的顶面4上。例如，可用氧化剂(如过氧化氢)、偶联剂(如三聚氰胺)或底漆处理顶面4。
有利地，多孔聚合物层3具有厚度T1以促进ECMP。该厚度T1被选择以使ECMP工艺期间的去除最大化，同时保持足够的厚度以提供最佳取平。换言之，厚度T1被最优化，从而导电基片5(阴极)和基片载体(阳极)能够提供最大的电势用于促进去除不需要的材料，同时提供足够的厚度用于取平。厚度T1有利地少于1.5mm(60密耳)。优选地，厚度T1有利地少于0.5mm(20密耳)。更优选地，厚度T1有利地少于0.25mm(10密耳)。此外，导电基片5具有约0.075mm～0.38mm(3～15密耳)的厚度T2。优选地，厚度T2为0.125mm～0.25mm(5～10密耳)。
多孔聚合物层3能由任何聚合、成膜材料制成，该材料能被制成液体溶剂的溶液，而且该溶液层干燥以形成通常为固体的聚合膜(即在常压温度下为固体)。该聚合物材料包括纯聚合物或其混合物，并包括添加剂如固化剂、着色剂、增塑剂、稳定剂和填充剂。实例聚合物包括聚氨酯聚合物，卤化乙烯聚合物，聚酰胺，聚酯酰胺，聚酯，聚碳酸酯，聚乙烯基缩丁醛，聚α甲基苯乙烯，聚偏二氯乙烯，丙烯酸和甲基丙烯酸的烷基酯，氯磺化聚乙烯，丁二烯和丙烯腈的共聚物，纤维素的酯和醚，聚苯乙烯，和它们的组合。
形成多孔聚合物层3的一个优选聚合材料是聚氨酯弹性体，它的形成是通过有机二异氰酸酯与含活性氢的聚合物材料如聚亚烷基醚二醇或羟基封端的聚酯反应，从而产生异氰酸酯封端的聚氨酯预聚物。该产生的预聚物可与扩链化合物如水或含两个与氨基氮原子键合的活性氢的化合物反应。有用的聚氨酯弹性体还可通过用简单的非聚二醇(如乙二醇或丙二醇)替代聚合二醇的全部或部分而制成。肼和N-甲基-双-氨基丙胺是优选的含氨基氮扩链剂。但是，其它的扩链剂包括二甲基哌嗪，4-甲基间苯二胺，间苯二胺，1，4-二氨基哌嗪，乙二胺，和它们的混合物。
此外，芳族、脂族和脂环族二异氰酸酯或它们的混合物能用于形成预聚物。例如，甲苯-2，4-二异氰酸酯，甲苯-2，6-二异氰酸酯，间亚苯基二异氰酸酯，亚联苯基-4，4’-二异氰酸酯，亚甲基-双(4苯基异氰酸酯)，4-氯-1，3-亚苯基二异氰酸酯，亚萘基-1，5-二异氰酸酯，四亚甲基-1，4-二异氰酸酯，六亚甲基-1，6-二异氰酸酯，十亚甲基-1，10-二异氰酸酯，环亚己基-1，4-二异氰酸酯，亚甲基双(4-环己基异氰酸酯)，和四氢萘基二异氰酸酯。异氰酸酯基团连接在芳族环上的亚芳基二异氰酸酯为优选。
优选的多元醇包括例如聚乙烯醚二醇，聚丙烯醚二醇，聚四亚甲基醚二醇，聚六亚甲基醚二醇，聚八亚甲基醚二醇，聚九亚甲基醚二醇，聚十亚甲基醚二醇，聚十二亚甲基醚二醇，和它们的混合物。聚亚烷基醚二醇是用于预聚物形成的优选含活性氢聚合材料。
用于导电基片5的材料包括例如一种或多种金属(铝、铜、钨、银、金等)，金属合金，石墨，碳和导电聚合物。优选用于基片5的材料包括铜，铜类合金，碳，以及贵金属如铑、铂、银、金，和它们的混合物。有利地，导电基片5具有至少105欧姆-1cm-1的电导率。优选地，导电基片5具有至少5×105欧姆-1cm-1的电导率。
现在参考图2，其图示说明了本发明的另一个实施方案，其中示出的抛光垫20具有柔性基片7，该基片7上覆盖导电基片5。为类似的技术特征指定与图1相同的附图标记。如此处所限定，“柔性”是指弯曲模量为1～5GPa的材料。该柔性基片7可以例如是聚酯薄膜。柔性基片7的其它实例材料包括聚酰亚胺薄膜、聚醚醚酮、聚醚酰亚胺、聚砜、聚醚砜。柔性基片7可在其一侧被覆盖(如图2所示)，或柔性基片7的两侧都被覆盖(未示出)。该柔性基片7有利地为抛光垫20提供了提高的电调谐电容(capability)和控制。柔性基片7具有0.025mm～0.5mm之间的厚度T3。优选地，厚度T3为0.075mm～0.375mm。更优选地，厚度T3为0.125mm～0.25mm。
现在参考图3，其图示说明了本发明的还有一个实施方案，其中示出的抛光垫30具有形成电路(circuitized)的柔性基片9。该形成电路的柔性基片9有利地为抛光垫30提供了提高的电调谐电容和控制。基片9的材料可与上图2所示柔性基片7的材料相似。电路15包括上电路13和下电路11。电路15可由例如一种或多种金属(铝、铜、钨、银、金等)、金属合金、石墨、碳和导电聚合物制成。电路15的优选材料包括铜、铜类合金、贵金属如铑、铂、银、金和它们的合金。
上电路和下电路13、11提供了穿过基片9的厚度T4的电导率。以这种方式，电路15充当了能够和导电物质(如载体基片(阳极))电连通的电极(阴极)。电路15具有良好的电和热传导率，以促进ECMP工艺。此外，形成电路的柔性基片9具有0.025mm～0.5mm的厚度。优选地，基片9具有0.125mm～0.25mm的厚度。
因此，本发明提供了一种用于电化学机械抛光的抛光垫，该垫包括覆盖在导电基片上的多孔聚合物层。本发明中，导电基片可充当能够和导电物质电连通的电极(阴极)。本发明的导电基片具有良好的电和热传导率和减少的热量集结，以促进ECMP工艺。此外，多孔聚合物层具有厚度T1以促进ECMP。厚度T1被选择以使ECMP工艺期间的去除最大化，同时保持足够的厚度以提供最佳取平。换言之，厚度T1被优化，以使阴极和阳极能够提供最大的电势以促进不需要材料的去除，同时提供足够的厚度用于取平。
现在参考图4，其提供了本发明抛光垫的一个截面图，作为ECMP系统的一部分示出。在这一实施方案中，示出了抛光垫10。该垫10具有抛光表面24。抛光垫10由压盘17支撑。具有金属层21(如铜)的基片(如一个晶片)容纳在基片载体23中，并被安装成接触抛光垫10的抛光表面24，或距该抛光表面24非常近。电解抛光流体25置于抛光表面24和基片金属层21之间。
导电基片5(阴极)通过电接插件系统31在电源27的负端29与该电源27相连。基片载体23通过电线35在电源27的正端33与该电源27相连，从而有效地使基片19(或者更加特定地为金属层21)充当阳极。这样就在阳极和阴极(导电基片5)之间通过电导性的抛光流体25建立了电连接(电路)。
在某些类型的ECMP系统(旋转抛光系统，轨道抛光系统，线性带抛光系统和网络类抛光系统)中，抛光垫相对于电源旋转。这样，继续参考图4，该图所示ECMP系统包括前述电接插件系统31，其适于在即使抛光垫10相对于电源27移动时，保持导电基片5和电源27之间的电接触。电接插件系统31适于调节与不同类型抛光系统相关的不同垫运动。例如，在旋转抛光器如IPEC 472，AMAT Mirra，SpeedfamAuriga，Straburg 6DS中，可用到侧面安装的连接、通过压盘连接或端点电缆装置。
Claims (12)
1.一种用于电化学机械抛光的抛光垫，该垫包括：
覆盖在导电基片上的多孔聚合物层，该多孔聚合物层具有少于1.5mm的厚度；
其中多孔聚合物层包括贯穿于从多孔聚合物层的抛光表面到导电基片的厚度的多个孔；其中多个孔在抛光表面上的直径小于在导电基片上的直径。
2.根据权利要求1的抛光垫，其中该多孔聚合物层具有少于0.5mm的厚度。
3.根据权利要求2的抛光垫，其中该多孔聚合物层具有少于0.25mm的厚度。
4.根据权利要求1的抛光垫，其中该导电基片具有0.07mm-0.38mm的厚度。
5.根据权利要求1的抛光垫，其中形成该多孔聚合物层的材料选自聚氨酯聚合物，卤化乙烯聚合物，聚酰胺，聚酯酰胺，聚酯，聚碳酸酯，聚乙烯基缩丁醛，聚α甲基苯乙烯，聚偏二氯乙烯，丙烯酸和甲基丙烯酸的烷基酯，氯磺化聚乙烯，丁二烯和丙烯睛的共聚物，纤维素的酯和醚，聚苯乙烯，和它们的组合。
6.根据权利要求1的抛光垫，其中用于该导电基片的材料是一种或多种选自铜，铜基合金，碳，铑，铂，银，金和它们的合金的材料。
7.根据权利要求1的抛光垫，其中该导电基片具有至少105欧姆-1cm-1的电导率。
8.一种用于电化学机械抛光的抛光垫，该垫包括：
多孔聚合物层，其具有少于1.5mm的厚度，且覆盖在导电基片上，其中该导电基片覆盖柔性基片，其中多孔聚合物层包括贯穿于从多孔聚合物层的抛光表面到导电基片的厚度的多个孔；其中多个孔在抛光表面上的直径小于在导电基片上的直径。
9.一种用于电化学机械抛光的抛光垫，该垫包括：
覆盖在形成电路的柔性基片上的多孔聚合物抛光层，该多孔聚合物抛光层具有少于1.5mm的厚度，其中多孔聚合物层包括贯穿于从多孔聚合物层的抛光表面到导电基片的厚度的多个孔；其中多个孔在抛光表面上的直径小于在导电基片上的直径。
10.一种进行电化学机械抛光工件的方法，该方法包括：
提供抛光垫，该抛光垫具有覆盖在导电基片上的多孔聚合物层，该多孔聚合物层具有少于1.5mm的厚度，其中多孔聚合物层包括贯穿于从多孔聚合物层的抛光表面到导电基片的厚度的多个孔；其中多个孔在抛光表面上的直径小于在导电基片上的直径；
在工件和多孔聚合物层之问提供电解抛光流体；
向该工件提供电流；和
将工件压紧在多孔聚合物层上，同时至少移动抛光垫或工件。
11.根据权利要求1的抛光垫，其中所述垫具有抛光表面的孔计数为100-325孔/平方毫米。
12.根据权利要求1的抛光垫，其中所述垫具有抛光表面的孔计数为500-10,000孔/平方毫米。
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Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5091417B2 (ja) * | 2006-03-30 | 2012-12-05 | 富士紡ホールディングス株式会社 | 研磨布 |
| JP5109409B2 (ja) * | 2007-02-28 | 2012-12-26 | 東レ株式会社 | 研磨パッドおよび研磨パッドの製造方法 |
| WO2009090897A1 (ja) * | 2008-01-18 | 2009-07-23 | Toyo Tire & Rubber Co., Ltd. | 電解研磨パッドの製造方法 |
| US7846715B2 (en) * | 2008-05-13 | 2010-12-07 | Owens Aaron M | Sample chamber volume reducer |
| CN101780661B (zh) * | 2009-01-15 | 2012-05-23 | 贝达先进材料股份有限公司 | 可导电的抛光垫及其制造方法 |
| US9025455B2 (en) | 2011-04-26 | 2015-05-05 | Industrial Technology Research Institute | Prioritized random access method, resource allocation method and collision resolution method |
| CN102773960A (zh) * | 2012-07-11 | 2012-11-14 | 苏州市世嘉科技股份有限公司 | 密封条现场发泡的新型工艺 |
| US9039488B2 (en) | 2012-10-29 | 2015-05-26 | Wayne O. Duescher | Pin driven flexible chamber abrading workholder |
| US8998678B2 (en) | 2012-10-29 | 2015-04-07 | Wayne O. Duescher | Spider arm driven flexible chamber abrading workholder |
| US9233452B2 (en) | 2012-10-29 | 2016-01-12 | Wayne O. Duescher | Vacuum-grooved membrane abrasive polishing wafer workholder |
| US9011207B2 (en) | 2012-10-29 | 2015-04-21 | Wayne O. Duescher | Flexible diaphragm combination floating and rigid abrading workholder |
| US8845394B2 (en) | 2012-10-29 | 2014-09-30 | Wayne O. Duescher | Bellows driven air floatation abrading workholder |
| US8998677B2 (en) | 2012-10-29 | 2015-04-07 | Wayne O. Duescher | Bellows driven floatation-type abrading workholder |
| US9604339B2 (en) | 2012-10-29 | 2017-03-28 | Wayne O. Duescher | Vacuum-grooved membrane wafer polishing workholder |
| US9199354B2 (en) | 2012-10-29 | 2015-12-01 | Wayne O. Duescher | Flexible diaphragm post-type floating and rigid abrading workholder |
| US9701323B2 (en) | 2015-04-06 | 2017-07-11 | Bedloe Industries Llc | Railcar coupler |
| CN105058250B (zh) * | 2015-06-30 | 2019-04-09 | 浙江师范大学 | 一种导电柔性磨具及其制备方法 |
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| US10926378B2 (en) | 2017-07-08 | 2021-02-23 | Wayne O. Duescher | Abrasive coated disk islands using magnetic font sheet |
| US11691241B1 (en) * | 2019-08-05 | 2023-07-04 | Keltech Engineering, Inc. | Abrasive lapping head with floating and rigid workpiece carrier |
| US20210323116A1 (en) * | 2020-04-18 | 2021-10-21 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Offset pore poromeric polishing pad |
| TWI845382B (zh) * | 2023-03-03 | 2024-06-11 | 大陸商杭州眾硅電子科技有限公司 | 導電吸附膜及拋光頭 |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002064314A1 (en) * | 2001-02-12 | 2002-08-22 | Speedfam-Ipec Corporation | Method and apparatus for electrochemical planarization of a workpiece |
| WO2002085570A2 (en) * | 2001-04-24 | 2002-10-31 | Applied Materials, Inc. | Conductive polishing article for electrochemical mechanical polishing |
| US20030062269A1 (en) * | 2001-09-28 | 2003-04-03 | Sujit Sharan | Electrochemical mechanical planarization |
| CN1458671A (zh) * | 2002-05-07 | 2003-11-26 | 应用材料有限公司 | 用于电化学机械抛光的导电抛光用品 |
| WO2003099519A1 (en) * | 2002-05-23 | 2003-12-04 | Nutool, Inc. | Polishing pad for electrochemical-mechanical polishing and methods to manufacture it |
| US20040040853A1 (en) * | 2002-08-29 | 2004-03-04 | Micron Technology, Inc. | Systems and methods for the electrolytic removal of metals from substrates |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE636018A (zh) | 1962-08-13 | 1900-01-01 | ||
| US3264274A (en) * | 1963-11-18 | 1966-08-02 | U S Peroxygen Corp | Diperesters of polyols |
| US3504457A (en) | 1966-07-05 | 1970-04-07 | Geoscience Instr Corp | Polishing apparatus |
| US3604457A (en) * | 1969-08-20 | 1971-09-14 | Emerson Electric Co | Pilot-operated four-way valve system |
| US4481680A (en) * | 1983-05-20 | 1984-11-13 | Rosetta Mason | Protective visor |
| US4612216A (en) * | 1983-07-01 | 1986-09-16 | The Dow Chemical Company | Method for making duplex metal alloy/polymer composites |
| US4841680A (en) * | 1987-08-25 | 1989-06-27 | Rodel, Inc. | Inverted cell pad material for grinding, lapping, shaping and polishing |
| US6099954A (en) * | 1995-04-24 | 2000-08-08 | Rodel Holdings, Inc. | Polishing material and method of polishing a surface |
| US6099964A (en) * | 1997-02-06 | 2000-08-08 | Wacker-Chemie Gmbh | Metal deposits on mesoscopic organopolysiloxane particles |
| US5911619A (en) * | 1997-03-26 | 1999-06-15 | International Business Machines Corporation | Apparatus for electrochemical mechanical planarization |
| JP3697963B2 (ja) * | 1999-08-30 | 2005-09-21 | 富士電機デバイステクノロジー株式会社 | 研磨布および平面研磨加工方法 |
| US6962524B2 (en) | 2000-02-17 | 2005-11-08 | Applied Materials, Inc. | Conductive polishing article for electrochemical mechanical polishing |
| JP2004237381A (ja) * | 2003-02-05 | 2004-08-26 | Sony Corp | 電解研磨パッド |
| US6998166B2 (en) * | 2003-06-17 | 2006-02-14 | Cabot Microelectronics Corporation | Polishing pad with oriented pore structure |
| JP2005260224A (ja) * | 2004-02-27 | 2005-09-22 | Asm Nutool Inc | 電気化学機械研磨のためのシステム |
-
2004
- 2004-05-25 US US10/854,321 patent/US7618529B2/en not_active Expired - Fee Related
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2005
- 2005-05-06 TW TW094114619A patent/TWI372094B/zh not_active IP Right Cessation
- 2005-05-24 CN CNB2005100738365A patent/CN100385631C/zh not_active Expired - Fee Related
- 2005-05-24 KR KR1020050043647A patent/KR101122106B1/ko not_active IP Right Cessation
- 2005-05-25 JP JP2005152712A patent/JP2005335062A/ja active Pending
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- 2009-09-14 US US12/558,647 patent/US7807038B2/en not_active Expired - Fee Related
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002064314A1 (en) * | 2001-02-12 | 2002-08-22 | Speedfam-Ipec Corporation | Method and apparatus for electrochemical planarization of a workpiece |
| WO2002085570A2 (en) * | 2001-04-24 | 2002-10-31 | Applied Materials, Inc. | Conductive polishing article for electrochemical mechanical polishing |
| US20030062269A1 (en) * | 2001-09-28 | 2003-04-03 | Sujit Sharan | Electrochemical mechanical planarization |
| CN1458671A (zh) * | 2002-05-07 | 2003-11-26 | 应用材料有限公司 | 用于电化学机械抛光的导电抛光用品 |
| WO2003099519A1 (en) * | 2002-05-23 | 2003-12-04 | Nutool, Inc. | Polishing pad for electrochemical-mechanical polishing and methods to manufacture it |
| US20040040853A1 (en) * | 2002-08-29 | 2004-03-04 | Micron Technology, Inc. | Systems and methods for the electrolytic removal of metals from substrates |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1702840A (zh) | 2005-11-30 |
| US7618529B2 (en) | 2009-11-17 |
| JP2005335062A (ja) | 2005-12-08 |
| KR101122106B1 (ko) | 2012-03-15 |
| KR20060048076A (ko) | 2006-05-18 |
| US20100000877A1 (en) | 2010-01-07 |
| TWI372094B (en) | 2012-09-11 |
| TW200603946A (en) | 2006-02-01 |
| US20050263406A1 (en) | 2005-12-01 |
| US7807038B2 (en) | 2010-10-05 |
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