CN100376038C - 电子组件及其制造方法 - Google Patents

电子组件及其制造方法 Download PDF

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Publication number
CN100376038C
CN100376038C CNB2004100909222A CN200410090922A CN100376038C CN 100376038 C CN100376038 C CN 100376038C CN B2004100909222 A CNB2004100909222 A CN B2004100909222A CN 200410090922 A CN200410090922 A CN 200410090922A CN 100376038 C CN100376038 C CN 100376038C
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CN
China
Prior art keywords
electronic building
building brick
part assembly
compensation
plumb joint
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB2004100909222A
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English (en)
Chinese (zh)
Other versions
CN1630103A (zh
Inventor
海因里希·格斯登克佩尔
德特勒夫·朔尔茨
莱纳尔·伊尔格
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EUPEC GmbH
Original Assignee
EUPEC GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by EUPEC GmbH filed Critical EUPEC GmbH
Publication of CN1630103A publication Critical patent/CN1630103A/zh
Application granted granted Critical
Publication of CN100376038C publication Critical patent/CN100376038C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
    • H01L23/051—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
    • H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor
    • H01L2924/13033—TRIAC - Triode for Alternating Current - A bidirectional switching device containing two thyristor structures with common gate contact
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19043—Component type being a resistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Lasers (AREA)
  • Light Receiving Elements (AREA)
CNB2004100909222A 2003-11-11 2004-11-10 电子组件及其制造方法 Expired - Fee Related CN100376038C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE2003152670 DE10352670A1 (de) 2003-11-11 2003-11-11 Elektrisches Bauelement
DE10352670.6 2003-11-11

Publications (2)

Publication Number Publication Date
CN1630103A CN1630103A (zh) 2005-06-22
CN100376038C true CN100376038C (zh) 2008-03-19

Family

ID=34584986

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2004100909222A Expired - Fee Related CN100376038C (zh) 2003-11-11 2004-11-10 电子组件及其制造方法

Country Status (2)

Country Link
CN (1) CN100376038C (de)
DE (1) DE10352670A1 (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009001534B4 (de) 2009-03-13 2012-10-04 Infineon Technologies Bipolar Gmbh & Co. Kg Lichtempfindliches, elektronisches Bauelement und Verfahren zur Herstellung eines Gehäusedeckels

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5994854A (ja) * 1982-11-24 1984-05-31 Nec Corp 半導体装置の蓋
JPH05283555A (ja) * 1992-04-01 1993-10-29 Sansha Electric Mfg Co Ltd 半導体装置
CN1214150A (zh) * 1996-03-20 1999-04-14 西门子公司 半导体装置
JP2003124410A (ja) * 2001-10-19 2003-04-25 Yamaha Corp 多層ヒートシンクおよびその製造方法
CN1431979A (zh) * 2000-05-29 2003-07-23 西门子公司 复合材料及其制造方法和应用

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61208873A (ja) * 1985-03-13 1986-09-17 Res Dev Corp Of Japan 圧接構造型両面ゲ−ト静電誘導サイリスタ
JPS63224242A (ja) * 1987-03-13 1988-09-19 Hitachi Ltd 熱伝達装置
JPH05175378A (ja) * 1991-12-26 1993-07-13 Hitachi Ltd 半導体装置
JPH05267491A (ja) * 1992-03-18 1993-10-15 Hitachi Ltd 圧接型半導体装置及びこれを使用した電力変換装置
JPH05292555A (ja) * 1992-04-07 1993-11-05 Hitachi Ltd スイッチの制御方法およびスイッチシステム
EP0789397B1 (de) * 1996-02-07 2004-05-06 Hitachi, Ltd. Schaltungsplatine und Halbleiterbauteil mit dieser
KR100499722B1 (ko) * 2000-02-29 2005-07-07 오므론 가부시키가이샤 칩형 반도체 소자
DE10135984B4 (de) * 2001-07-24 2005-04-21 eupec Europäische Gesellschaft für Leistungshalbleiter mbH & Co. KG Anordnung mit einem lichtzündbaren Halbleiterbauelement und einem Teil zur Lichtdurchführung

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5994854A (ja) * 1982-11-24 1984-05-31 Nec Corp 半導体装置の蓋
JPH05283555A (ja) * 1992-04-01 1993-10-29 Sansha Electric Mfg Co Ltd 半導体装置
CN1214150A (zh) * 1996-03-20 1999-04-14 西门子公司 半导体装置
CN1431979A (zh) * 2000-05-29 2003-07-23 西门子公司 复合材料及其制造方法和应用
JP2003124410A (ja) * 2001-10-19 2003-04-25 Yamaha Corp 多層ヒートシンクおよびその製造方法

Also Published As

Publication number Publication date
DE10352670A1 (de) 2005-06-16
CN1630103A (zh) 2005-06-22

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Granted publication date: 20080319

Termination date: 20091210