CN100369275C - Light-emitting component capable of increasing light-emitting active area - Google Patents
Light-emitting component capable of increasing light-emitting active area Download PDFInfo
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- CN100369275C CN100369275C CNB200410002406XA CN200410002406A CN100369275C CN 100369275 C CN100369275 C CN 100369275C CN B200410002406X A CNB200410002406X A CN B200410002406XA CN 200410002406 A CN200410002406 A CN 200410002406A CN 100369275 C CN100369275 C CN 100369275C
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Abstract
The present invention relates to a light emitting element, particularly to a light emitting element which can increase the area of a light emitting active region to enhance the brightness of light emission. A second epitaxial layer and at least one first epitaxial layer are arranged on a crystal grain base board in sequence, and at least one first electrode and a plurality of second electrodes are arranged on the upper surface of the first epitaxial layer, wherein the second electrodes penetrate through the first epitaxial layer, are isolated from the first epitaxial layer by an electrode insulating layer and are electrically connected with the second epitaxial layer, and the first electrode and the second electrodes are in staggered arrangement at intervals. In addition, first power supply circuits and a second power supply circuit, which can be correspondingly and individually attached to and electrically connected with the first electrode or the second electrodes, are arranged on a power supply base board according to the positions of the first electrode and the second electrodes. The first power supply circuits can be electrically connected with a first communicating circuit, the second power supply circuit can be electrically connected with a second communicating circuit, and the first communicating circuit and the second communicating circuit are arranged on the power supply base board but are not directly arranged on a light emitting diode.
Description
Technical field
The invention relates to a kind of light-emitting component, especially refer to that a kind of luminous active region area that increases is to improve the light-emitting component of luminosity, mainly be that one first connection circuit and one second connection circuit are located on the power supply substrate, and directly do not occupy the luminous active region of light-emitting diode.
Background technology
Therefore light-emitting diode is widely used in computer peripheral, communication products and other electronic installations because have advantages such as volume is little, in light weight, low power consumption, life-span length.The light-emitting diode of general volume production, be on-substrate, for example sapphire (sapphire), carborundum materials such as (SiC), become to grow one and have the epitaxial layer that pn connects face, when p type epitaxial layer and n type epitaxial layer both sides import a driving voltage, can make pn connect face because of the compound light source that projects in electronics-electric hole.
Existing light emitting diode construction shown in Figure 1A and Figure 1B, is structural side view and the structure vertical view thereof that is respectively an existing light-emitting diode.As shown in the figure; it mainly is to grow up in a crystal grain substrate 11 tops one second epitaxial layer 15 is arranged; and second epitaxial layer, 15 definables have a protruding relatively first surface 153 and a relative second surface 155 that caves in; wherein; be formed with one first epitaxial layer 13 on the first surface 153, have the luminous active region (being first surface 153) that produces the projection source effect so that can be formed with one between first epitaxial layer 13 and second epitaxial layer 15 naturally.The part upper surface of first epitaxial layer 13 is provided with the second surface 155 that one first electrode, 17, the second epitaxial layers 15 are not provided with first epitaxial layer 13 and then is provided with one second electrode 19.In addition, the part upper surface of first electrode 17 upper surface that is provided with first weld pad, 171, the second electrodes 19 that can be connected with external circuitry then is provided with second weld pad 191 that can be connected with external circuitry.When first electrode 17 and second electrode 19 import the driving power of a forward bias voltage drop, electric current will enter 153 effects of luminous active region, and then produce projection source.
For a light-emitting diode, if the active area of luminous active region 153 is big more, then luminous quantity the more; And bigger by the electric current of luminous active region 153, then luminous intensity is also bigger.But if by the current density of luminous active region 153 when inhomogeneous, the as easy as rolling off a log current density of the luminous active region 153 of part that causes is too high, the then relative low excessively phenomenon of the current density of the luminous active region 135 of part.When reaching capacity, not only luminous efficiency can reduce when luminous active region 153 current densities are too high, and can cause the local working temperature of luminous active region 153 to rise, even causes damage.Otherwise, cross when low because of current density when the luminous active region 153 of part, then cause component loss because giving full play to its luminous efficiency.Therefore, how to make operating current evenly by luminous active region 153 to increase luminous efficiency, be that light-emitting diode is on making and a great problem on designing really.
And, above-mentioned diode structure, owing to present asymmetric distribution on first electrode 17 and second electrode, 19 geometry, so the as easy as rolling off a log uneven phenomenon of electric current distribution that causes.For avoiding this kind uneven current phenomenon, industry proposes a kind of equally distributed light emitting diode construction of working current density that makes, shown in Fig. 2 A and Fig. 2 B, be to be respectively another kind of existing light-emitting diode structure vertical view and along the generalized section of A-B line.Light-emitting diode 20 mainly is to be formed with one second epitaxial layer 25 in a crystal grain substrate 21 upper surfaces; second epitaxial layer, 25 definables have the first surface 253 of a plurality of projectioies relatively and the second surface 255 that caves in relatively; first surface 253 and second surface 255 ask that relatively lattice are staggered; wherein be formed with one first epitaxial layer 23 on the first surface 253, form a luminous active region (being first surface 253) and make first epitaxial layer, 23 public second epitaxial layers 25 meet the face place.Each first epitaxial layer, 23 upper surface is provided with one first electrode 271, second surface 255 upper surfaces of each second epitaxial layer 25 then are provided with one second electrode, 291, the first electrodes 271 and second electrode 291, and both ask same because first surface 253 and second surface 255 the position being set and the interlaced arrangement of layout mutually.In addition, still be provided with one and can be communicated with these a plurality of first electrodes 271 and the direct first connection electrode 273 that contacts first epitaxial layer 23, and, but these a plurality of second electrodes 291 of electrical communication also directly are contacted with the second connection electrode 293 of the second surface 255 of second epitaxial layer 25; So that can electrically conduct between each first electrode 271, in like manner, also can electrically conduct between each second electrode 291.Owing to each first electrode 271 and second electrode 291 are to ask in twos that lattice are staggered to set up, therefore suitable symmetry on how much, can effectively reduce the phenomenon of luminous active region 253 working current density maldistributions.
Though above-mentioned light emitting diode construction can effectively reduce working current density in luminous active region 2
The uneven phenomenon of 53 distributions, but, because the second connection electrode 293 is directly to be located on the second surface 255 of second epitaxial layer 25, in other words, must cut a hole again and be provided with one and can settle the second part second surface 255 that is communicated with electrode 293 positions, enlarge the scope that second surface 255 is occupied on light-emitting diode 20, reduce the active area of luminous active region 253 relatively.Therefore second is communicated with the area that electrode 293 has taken the luminous active region 253 of part, has caused relatively and has reduced the sorry of amount of light and luminosity.
Summary of the invention
For this reason, how at the shortcoming of above-mentioned prior art, to design a kind of light-emitting component of novelty, the luminous active region area that not only can increase light-emitting diode relatively is to improve luminosity, working current density is evenly distributed, increase its useful life thus, this is invention emphasis of the present invention.
Main purpose of the present invention, be to provide a kind of light-emitting component capable of increasing light-emitting active area, by being arranged at first connection circuit and second connection circuit directly electrical communication in LED crystal particle on corresponding a plurality of first electrodes and second electrode of a power supply on the substrate, be communicated with electrode to replace the former connection electrode of first on the luminescent grain and second that should be arranged at, avoid the first connection electrode and second to be communicated with electrode and take the area of luminous active region, and then reach the effect of relative increase amount of light and luminosity.
Secondary objective of the present invention, be to provide a kind of light-emitting component capable of increasing light-emitting active area, by being how much symmetrical structures with a plurality of first electrodes and second electrode design,, and then improve luminous efficiency and prolong product useful life with the current density of the luminous active region of uniform distribution.
Another purpose of the present invention, be to provide a kind of light-emitting component capable of increasing light-emitting active area, directly be provided with one on the substrate according to first electrode of LED crystal particle and first power supply circuits and the second power supply circuits pattern of second geometric electrode figure configuration by power supply, and reach the target that improves packaging density.
Another purpose of the present invention, be to provide a kind of light-emitting component capable of increasing light-emitting active area, the position of its routing weld pad is to be arranged on the power supply substrate, but not directly on LED crystal particle, carrying out the routing program, this is to be avoided because of routing program light-emitting diode being caused light-shading effect.
For reaching above-mentioned purpose, the invention provides a kind of light-emitting component capable of increasing light-emitting active area, it is characterized in that it is mainly constructed is to include:
At least one luminescent grain, each luminescent grain includes a crystal grain substrate, the crystal grain substrate is provided with one second epitaxial layer, the second epitaxial layer definable has at least one first surface and at least one second surface, be formed with one first epitaxial layer on the first surface again, can be formed with a luminous active region naturally between first epitaxial layer and second epitaxial layer, the part surface of first epitaxial layer is provided with at least one first electrode, and the part surface of second epitaxial layer is provided with a plurality of second electrodes;
Wherein these a plurality of second electrodes be may be selected to be a straight line arrangement, annular arrangement, be staggered and knockdown one of them; And
One power supply substrate, can be on its surface with respect to the position of first electrode and this second electrode, be respectively equipped with at least one first power supply circuits and a plurality of second power supply circuits, and each first power supply circuits can be electrically connected by one first connection circuit, a plurality of second power supply circuits can be connected by one second connection circuit, first power supply circuits and corresponding first electrode electrically connect mutually, and second power supply circuits and corresponding second electrode electrically connect mutually.
Wherein this power supply substrate is to be a surface insulated substrate.
Wherein this power supply substrate is to may be selected to be a silicon nitride, aluminium nitride, carborundum, gallium nitride and knockdown one of them is made.
Wherein this LED crystal particle is to adopt the chip package mode, causes this LED crystal particle upset to fit in this power supply substrate.
Wherein also include an electric static discharge protector, be fixedly arranged on this power supply substrate, can be electrically connected at this first connection circuit and this second power supply circuits respectively.
Wherein this electrostatic protection element may be selected to be Zener diode and Schottky diode wherein it
Wherein also include electric static discharge protector, be fixedly arranged on this power supply substrate, can be electrically connected at this second connection circuit and this first power supply circuits respectively.
Wherein this crystal grain substrate is to may be selected to be a carborundum, gallium nitride, sapphire, GaAs and knockdown one of them is made.
Wherein the side of this second electrode is provided with an electrode dielectric layer.
Wherein the second surface of this second epitaxial layer is to be lower than first surface.
Wherein this first connection circuit is provided with at least one first weld pad, and this second connection circuit is provided with at least one second weld pad.
Wherein still be provided with an adhesive layer between this first electrode and first power supply circuits and second electrode and second power supply circuits.
Description of drawings
For making the auditor further understanding and understanding be arranged to feature of the present invention, structure and the effect reached, with preferred embodiment and accompanying drawing describe in detail as after, wherein:
Figure 1A is the structural side view of existing light-emitting diode;
Figure 1B is the structure vertical view of light-emitting diode shown in Figure 1A;
Fig. 2 A is the structure vertical view of another existing light-emitting diode;
Fig. 2 B be shown in Fig. 2 A light-emitting diode along A-B line generalized section;
Fig. 3 A is the led configurations vertical view of a preferred embodiment of the present invention;
Fig. 3 B be as shown in Figure 3A embodiment along the generalized section of C-D line;
Fig. 3 C is the power supply base plate structure vertical view of a preferred embodiment of the present invention;
Fig. 4 A is the structure vertical view after LED crystal particle of the present invention and the power supply substrate in combination;
Fig. 4 B is the present invention such as Fig. 4 A illustrated embodiment generalized section along the E-F line;
Fig. 5 A is the decomposing schematic representation of another embodiment of the present invention;
Fig. 5 B is the combination schematic diagram of the present invention such as Fig. 5 A illustrated embodiment;
Fig. 6 A is the LED crystal particle structure vertical view of further embodiment of this invention;
Fig. 6 B is the present invention's generalized section of embodiment as shown in Figure 6A;
Fig. 6 C is the power supply base plate structure vertical view of a preferred embodiment of the present invention;
Fig. 7 A is the structure vertical view after the present invention such as Fig. 6 A and the combination of Fig. 6 C illustrated embodiment; And
Fig. 7 B is the generalized section of the present invention such as Fig. 7 A illustrated embodiment.
Embodiment
At first, seeing also Fig. 3 A to Fig. 3 C, is the structure vertical view that is respectively a preferred embodiment of the present invention, along the generalized section of C-D line and the structure vertical view of power supply substrate.As shown in the figure, the light-emitting diode that can increase luminous active region mainly is to be combined by a LED crystal particle 30 and a power supply substrate 41.Wherein, LED crystal particle 30 mainly is to be formed with one second epitaxial layer 35 on a crystal grain substrate 31; and second epitaxial layer, 35 definables have a protruding relatively first surface 353 and a second surface 355 that caves in relatively; and first surface 353 tops are formed with one first epitaxial layer 33 again, cause to be formed with a luminous active region (being first surface 353) between first epitaxial layer 33 and second epitaxial layer 35 naturally.Usually, crystal grain substrate 31 can be made up of materials such as a carborundum, GaAs, sapphire, gallium nitride, and first epitaxial layer 3
3 and second epitaxial layer 35 can be made up of gallium nitride (GaN), gallium phosphide (GaP), InGaP (hGaP), aluminium gallium nitride alloy 3-5 family element materials such as (AlGaN).
The upper surface of first epitaxial layer 33 is provided with one first electrode 331, and be respectively equipped with one second electrode 351 in two side positions of first electrode 331, so that the second surface 355 of second electrode 351 contact, second epitaxial layer 35, and be electrically insulated by an electrode dielectric layer 37 and first epitaxial layer 33 and first electrode 331.First electrode 331 and second electrode, 351 both mutual layouts are staggered, so that action current can evenly pass through luminous active region 353, and then the increase luminous efficiency, and avoid local current densities too high and damage luminous active region 353.
Again, power supply substrate 41 upper surfaces are with respect to first electrode 33 of LED crystal particle 30
The position of 1 and second electrode 351 and directly be provided with at least one first power supply road 431 and second power supply circuits 451.In addition, still be provided with first connection circuit 43 and can be electrically connected at this first power supply circuits 431, and second connection circuit 45 also can be electrically connected at each second power supply circuits 451.The quantity of first power supply circuits 431 and second power supply circuits 451 is the quantity that is same as first electrode 331 and second electrode 351.Wherein, power supply substrate 41 can be selected silicon nitride (Si for use
3N
4), aluminium oxide (Al
2O
3), aluminium nitride (AlN), beryllium oxide (BeO) and be covered with dielectric material (SiO
2, TiO
2, Si
3N
4Deng) carborundum (SiC), silicon (Si), gallium nitride insulating material such as (GaN).
Connect achievement, see also Fig. 4 A and Fig. 4 B, the structure vertical view that is LED crystal particle after combination, and along the generalized section of E-F line.As shown in the figure, LED crystal particle 30 is inverted, and utilizes an adhesive layer 47 respectively with its first electrode 331 and second electrode, 351 corresponding first power supply circuits 431 of applying and second power supply circuits 451.Owing to present embodiment is by directly being located at second connection circuit 45 of power supply on the substrate 41 connects each correspondence via a plurality of second power supply circuits 451 second electrode 351, need to connect each second electrodes 291 and be different from existing structure by the second connection electrode 293 that is arranged in LED crystal particle 20 always, can avoid second to be communicated with the area that electrode 293 takies luminous active region 253, therefore can increase the area of luminous active region 353 relatively.In addition, the material of adhesive layer 47 can be selected materials such as Xi-Jin (AuSn), silicon-Jin (AuSi), tin-lead (PbSn), Xi-Yin (SnAg), tin-indium-Yin (SnhAg), elargol or tin cream for use, is spread out of by substrate 41 so that the work thermal source of luminous active region 353 is easier.
Again, seeing also Fig. 5 A and Fig. 5 B, is the decomposing schematic representation and the combination schematic diagram thereof of further embodiment of this invention.As shown in the figure, a power supply substrate 51 upper surfaces are respectively equipped with one first connection circuit 5
3 and second connection circuit 55 is provided with a plurality of second power supply circuits 551 and first connection circuit 53 is provided with 55 of a plurality of first power supply circuits, 531, the second connection circuits.When fitting in a plurality of LED crystal particle 30 on the power supply substrate 51, first electrode 331 of each LED crystal particle 30 and second electrode 351 can fit in corresponding first power supply circuits 531 respectively and second power supply circuits 551 not only can be provided with a plurality of LED crystal particle 30 by this on a power supply substrate 51, to improve luminosity.And if a plurality of LED crystal particle 30 are to select the different colours projection source to form, for example blue light, green glow or ruddiness then also can wholely produce white light source or All colour light source.
In addition, still can be with an electric static discharge protector 57, for example Zener diode or Schottky diode are fixedly arranged on the substrate 51, and respectively its two electrode are electrically connected at first connection circuit 5
One or second connection circuit 55 wherein of 3 and second power supply circuits 551 and one of them of first power supply circuits, 531 (not shown)s, can reach the doubt that prevents to cause LED crystal particle 30 accidental destructions, thus to guarantee the normal use of luminescent grain 30 because of the static discharge effect.
Because a plurality of first power supply circuits 531 and second power supply circuits 55 on the substrate 51
The 1st, cooperate the quantity of first electrode 331 of LED crystal particle 30 and second electrode 351 and set up, therefore, can on the substrate 51 of minimum area, be equiped with the most a plurality of LED crystal particle 30, and then improve packaging density and reach the target that makes light-emitting component compact.
Again, seeing also Fig. 6 A to Fig. 6 C, is that structure vertical view, the section that is respectively the LED crystal particle of further embodiment of this invention looked intention and the structure vertical view of the substrate of powering.As shown in the figure, LED crystal particle 60 main structures include a crystal grain substrate 61, and its upper surface is provided with 65 definition of one second epitaxial layer, 65, the second epitaxial layers a plurality of first surfaces 653 of projection relatively and the second surface 655 of a plurality of relative depressions.Each first surface 653 is provided with one first epitaxial layer 63, so that be formed with a luminous active region (being first surface 653) between each first epitaxial layer 63 and second epitaxial layer 65 naturally.The second surface 655 that the upper surface of each first epitaxial layer 63 is provided with one first electrode, 631, the second epitaxial layers 65 then is provided with a plurality of second electrodes 651 so that a plurality of first electrode 631 and second electrode 651 layout is staggered respectively sets up.In addition, the periphery of second electrode 651 is provided with one deck electrode dielectric layer 67, to avoid second electrode 651 directly contact first epitaxial layer 63 and first electrode 631.
5 are connected with a plurality of second power supply circuits 751.Wherein, the position of these a plurality of first circuit 731 and these a plurality of second circuits 751 and quantity all cooperate the position of first electrode 631 and second electrode 651 and quantity and set up.
Again, the appropriate location of first connection circuit 73 is provided with on the appropriate location of first weld pad, 735, the second connection circuits 75 and also is provided with one second weld pad 755, so that the carrying out of routing program to be provided.Because first weld pad 735 and second weld pad 755 are to be located on the power supply substrate 71; but not directly be located on the LED crystal particle 60; can avoid directly light-emitting diode 60 being caused damage, thus to protect the operate as normal of LED crystal particle 60 because of the routing program.
At last, seeing also Fig. 7 A and Fig. 7 B, is structure vertical view and the generalized section thereof after combination as Fig. 6 A and Fig. 6 B illustrated embodiment.As shown in the figure, with fitting in power supply substrate 71 after LED crystal particle 60 upsets,, a plurality of first electrode 631 then is connected to corresponding second power supply circuits 751 so that being connected to corresponding first power supply circuits, 731, the second electrodes 651.
Because first electrode 631 and second electrode 651 are mutual layouts to interlock and sets up, and has symmetry, thus each luminous active region 653 on to make current density very even.In addition, each second electrode 651 is second connection circuits 7 of being located on the power supply substrate 71 by one
5 and conducting, therefore, can be as existing structure, because need on LED crystal particle 20, be provided with the doubt that the second connection electrode 293 that connects each second electrode 291 in succession takies luminous active region 235 areas relatively always.
Again, though the foregoing description is explanation with second electrode of linear array all, but be not limited thereto, when utilizing annular arrangement, being staggered and other how much symmetric arrays are implemented, as long as first connection circuit 73 and second connection circuit 75 are located on the power supply substrate 71, but not directly be located on the LED crystal particle 60, just can reach the effect that increases luminous active area.
Again, though in above-mentioned each embodiment, second electrode 351,651 of each LED crystal particle 30,60 all is designed to and first electrode, 331,631 approximate or identical level heights, but under technical characterictic of the present invention, existing LED crystal particle 20 shown in Fig. 2 B is also applicable, only need are located at second connection circuit 293 on the power supply substrate 41 and get final product, and can reach the effect that the present invention desires to reach equally.
Again, though in above-mentioned each embodiment, the power supply substrate the 41,51, the 71st, for an insulating material made, in different embodiment, it also can be-and materials such as silicon sulfide, silicon, GaAs replace, just get final product coated with one deck insulating material on the power supply substrate again.
In sum, the invention relates to a kind of light-emitting component, refer to that especially a kind of luminous active region area that increases to improve the light-emitting component of luminosity, can increase luminous active region area relatively when knowing, and thus to increase luminous efficiency.So the present invention one is rich in novelty, progressive, and the invention of effect can be utilized, the terms and conditions of patent application should be met, so submit patent of invention in accordance with the law for industry.
Above-described, it only is a preferred embodiment of the present invention, be not to be used for limiting scope of the invention process, promptly all equalizations of doing according to the described shape of the present patent application claim, structure, feature and spirit change and modify, all should be included in please claim in of the present invention in.
Claims (12)
1. a light-emitting component capable of increasing light-emitting active area is characterized in that, it is mainly constructed is to include:
At least one luminescent grain, each luminescent grain includes a crystal grain substrate, the crystal grain substrate is provided with one second epitaxial layer, the second epitaxial layer definable has at least one first surface and at least one second surface, be formed with one first epitaxial layer on the first surface again, can be formed with a luminous active region naturally between first epitaxial layer and second epitaxial layer, the part surface of first epitaxial layer is provided with at least one first electrode, and the part surface of second epitaxial layer is provided with a plurality of second electrodes;
Wherein these a plurality of second electrodes be may be selected to be a straight line arrangement, annular arrangement, be staggered and knockdown one of them; And
One power supply substrate, can be on its surface with respect to the position of first electrode and this second electrode, be respectively equipped with at least one first power supply circuits and a plurality of second power supply circuits, and each first power supply circuits can be electrically connected by one first connection circuit, a plurality of second power supply circuits can be connected by one second connection circuit, first power supply circuits and corresponding first electrode electrically connect mutually, and second power supply circuits and corresponding second electrode electrically connect mutually.
2. light-emitting component capable of increasing light-emitting active area as claimed in claim 1 is characterized in that, wherein this power supply substrate is to be a surface insulated substrate.
3. light-emitting component capable of increasing light-emitting active area as claimed in claim 2 is characterized in that, wherein this power supply substrate is to may be selected to be a silicon nitride, aluminium nitride, carborundum, gallium nitride and knockdown one of them is made.
4. light-emitting component capable of increasing light-emitting active area as claimed in claim 1 is characterized in that, wherein this LED crystal particle is to adopt the chip package mode, causes this LED crystal particle upset to fit in this power supply substrate.
5. light-emitting component capable of increasing light-emitting active area as claimed in claim 1 is characterized in that, wherein also includes an electric static discharge protector, is fixedly arranged on this power supply substrate, can be electrically connected at this first connection circuit and this second power supply circuits respectively.
6. light-emitting component capable of increasing light-emitting active area as claimed in claim 5 is characterized in that, wherein this electrostatic protection element may be selected to be Zener diode and Schottky diode wherein it
7. light-emitting component capable of increasing light-emitting active area as claimed in claim 1 is characterized in that, wherein also includes electric static discharge protector, is fixedly arranged on this power supply substrate, can be electrically connected at this second connection circuit and this first power supply circuits respectively.
8. light-emitting component capable of increasing light-emitting active area as claimed in claim 1 is characterized in that, wherein this crystal grain substrate is to may be selected to be a carborundum, gallium nitride, sapphire, GaAs and knockdown one of them is made.
9. light-emitting component capable of increasing light-emitting active area as claimed in claim 1 is characterized in that wherein the side of this second electrode is provided with an electrode dielectric layer.
10. light-emitting component capable of increasing light-emitting active area as claimed in claim 1 is characterized in that wherein the second surface of this second epitaxial layer is to be lower than first surface.
11. light-emitting component capable of increasing light-emitting active area as claimed in claim 1 is characterized in that, wherein this first connection circuit is provided with at least one first weld pad, and this second connection circuit is provided with at least one second weld pad.
12. light-emitting component capable of increasing light-emitting active area as claimed in claim 1 is characterized in that, wherein still is provided with an adhesive layer between this first electrode and first power supply circuits and second electrode and second power supply circuits.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB200410002406XA CN100369275C (en) | 2004-01-29 | 2004-01-29 | Light-emitting component capable of increasing light-emitting active area |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB200410002406XA CN100369275C (en) | 2004-01-29 | 2004-01-29 | Light-emitting component capable of increasing light-emitting active area |
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| CN1558450A CN1558450A (en) | 2004-12-29 |
| CN100369275C true CN100369275C (en) | 2008-02-13 |
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| CNB200410002406XA Expired - Fee Related CN100369275C (en) | 2004-01-29 | 2004-01-29 | Light-emitting component capable of increasing light-emitting active area |
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| CN103680340A (en) * | 2013-12-18 | 2014-03-26 | 长春希达电子技术有限公司 | Integrated LED display encapsulated module suitable for ultrahigh display density |
| CN108987547A (en) * | 2018-07-20 | 2018-12-11 | 扬州乾照光电有限公司 | A kind of light emitting diode and preparation method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1264181A (en) * | 1999-01-29 | 2000-08-23 | 丰田合成株式会社 | Light-emitting diode |
| EP1207563A2 (en) * | 2000-11-08 | 2002-05-22 | LumiLeds Lighting U.S., LLC | Direct bonding of flip-chip light-emitting diode and flip-chip ESD protection chip to electrodes in a package |
| US6593597B2 (en) * | 2001-06-05 | 2003-07-15 | South Epitaxy Corporation | Group III-V element-based LED having ESD protection capacity |
-
2004
- 2004-01-29 CN CNB200410002406XA patent/CN100369275C/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1264181A (en) * | 1999-01-29 | 2000-08-23 | 丰田合成株式会社 | Light-emitting diode |
| EP1207563A2 (en) * | 2000-11-08 | 2002-05-22 | LumiLeds Lighting U.S., LLC | Direct bonding of flip-chip light-emitting diode and flip-chip ESD protection chip to electrodes in a package |
| US6593597B2 (en) * | 2001-06-05 | 2003-07-15 | South Epitaxy Corporation | Group III-V element-based LED having ESD protection capacity |
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| CN1558450A (en) | 2004-12-29 |
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