KR20100047795A - Light emitting diode for ac operation - Google Patents

Abstract

PURPOSE: A light emitting diode is provided to improve use efficiency of a light emitting cell by including full-wave light emitting units with two light emitting cells. CONSTITUTION: Half-wave light emitting units(h1,h2,h3,h4) have at least one light emitting cell(10) and first and second terminals on both sides. Full wave light emitting units(a1,a2) include at least one light emitting cell(20) and third and fourth terminals on both sides. Each third terminal of the full wave light emitting units is electrically connected to the second terminals of two half wave light emitting units. Each fourth terminal of the full wave light emitting units is electrically connected to the first terminals of other two half wave light emitting units.

Description

Light Emitting Diodes {LIGHT EMITTING DIODE FOR AC OPERATION}

The present invention relates to a compound semiconductor light emitting diode, and more particularly, to a light emitting diode which can be driven by being connected to an AC power source.

Compound semiconductor light emitting diodes such as gallium nitride-based light emitting diodes are widely used as display devices and backlights, and consume less power and have longer lifetimes than conventional light bulbs or fluorescent lamps. It is expanding the use area.

The light emitting diode is repeatedly turned on and off in accordance with the direction of the current under AC power. Therefore, when the light emitting diode is directly connected to an AC power source, the light emitting diode does not emit light continuously and is easily damaged by reverse current.

In order to solve the problem of the light emitting diode, a light emitting diode that can be directly connected to a high voltage AC power source is disclosed in International Publication No. WO 2004/023568 (Al) "Light-Emitting Device Having Light-Emitting Components" (LIGHT-EMITTING DEVICE HAVING LIGHT- EMITTING ELEMENTS has been disclosed by SAKAI et. Al., And light emitting diodes of various structures have been developed.

According to WO 2004/023568 (Al), the LEDs form LED arrays two-dimensionally connected in series by metallization on an insulating substrate, such as a sapphire substrate. These two LED arrays are connected in anti-parallel on the substrate, emitting light continuously by an AC power supply.

As disclosed in WO 2004/023568 (Al), one array is driven during the half cycle of an alternating current power source, and the other array is driven during the next half cycle. That is, one half of the light emitting cells in the light emitting diodes are driven while the phase of the AC power source is changed. Therefore, the use efficiency of the light emitting cells does not exceed 50%.

On the other hand, a light emitting diode driven under an AC power source by making a bridge rectifier using light emitting cells on a substrate and arranging an array of light emitting cells connected in series between two nodes of the bridge rectifier is disclosed in Korean Patent Application Laid-Open No. 10-2006-1800. It is disclosed in the call. According to this, the array of light emitting cells connected to the bridge rectifier can propagate light regardless of the phase change of the AC power source to increase the use efficiency of the light emitting cells.

However, when the number of light emitting cells connected to the bridge rectifier is increased, a high voltage reverse voltage is applied to a specific light emitting cell in the bridge rectifier, and thus, the light emitting cell of the bridge rectifier may be damaged, and as a result, the light emitting diode may be damaged. In order to prevent this, the number of light emitting cells in the array of light emitting cells connected to the bridge rectifier may be reduced, but in this case, it is difficult to provide a light emitting diode driven under a high voltage AC power supply. On the other hand, it is possible to reduce the reverse voltage by increasing the number of light emitting cells constituting the bridge rectifier, but the use efficiency of the light emitting cells again falls.

The problem to be solved by the present invention is to provide an improved light emitting diode that can be driven under a high voltage AC power supply.

Another object of the present invention is to provide a light emitting diode that can increase the use efficiency of the light emitting cells while reducing the reverse voltage applied to each light emitting cell in the light emitting diode.

In order to solve the above problems, the present invention provides a light emitting diode having a plurality of light emitting cells on a substrate. The light emitting diodes may include: half-wave light emitting units each having at least one light emitting cell and having first and second terminals at both ends thereof; And radio wave emitting units each having at least one light emitting cell and having third and fourth terminals at both ends thereof. Meanwhile, each third terminal of the radio wave emitting units is electrically connected to the second terminals of two half wave light emitting units, and each fourth terminal of the radio wave emitting units is a first terminal of another two half wave light emitting units. Are electrically connected to each other. Further, one half-wave light emitting unit is connected in series between the third terminal of one of the light emitting units and the fourth terminal of the other one of the two light emitting units, and the one of the two light emitting units Another half-wave light emitting unit is connected in series between the fourth terminal of and the third terminal of the other radio wave emitting unit.

Here, the half-wave light emitting unit refers to a light emitting unit to which the forward voltage is applied during the half cycle of the AC power, and the reverse voltage is applied to the other half cycle, and the full-wave light emitting unit refers to the light emitting unit to which the forward voltage is applied even if the phase of the AC power is changed. do. Further, the half-wave light emitting unit and the full-wave light emitting unit each have at least one light emitting cell, and when they have a plurality of light emitting cells, the light emitting cells in the light emitting unit are connected in series.

By using the radio light emitting units, since the radio light emitting units are driven irrespective of the phase change of the AC power under AC power, it is possible to increase the use efficiency of the light emitting cells in the light emitting diode. In addition, the arrays of half-wave light emitting units share the full-wave light emitting units to lower the reverse voltage applied to the half-wave light emitting unit.

On the other hand, half wave light emitting units connected in series between two neighboring radio wave light emitting units having a small number of light emitting cells are effective to prevent breakage of the short wave light emitting unit due to reverse voltage. Thus, at least one of the half-wave light emitting units connected in series between two neighboring radio light emitting units may have a single light emitting cell, and furthermore, in series between these two neighboring radio light emitting units. The half wave light emitting units may have a single light emitting cell.

On the other hand, the light emitting units may have a single light emitting cell or a plurality of light emitting cells. When each of the light emitting units has a single light emitting cell, the reverse voltage applied to the half-wave light emitting units can be minimized, and when the plurality of light emitting units each have a plurality of light emitting cells, the use efficiency of the light emitting cells can be increased. Can be. Therefore, the number of light emitting cells in the full wave light emitting unit may be adjusted in consideration of the reverse voltage applied to the short wave light emitting unit and the use efficiency of the light emitting cells.

The light emitting diode may further include two terminals for connecting to an external power source. Each of the terminals is electrically connected to an anode terminal of one half-wave light emitting unit and a cathode terminal of the other half-wave light emitting unit. Accordingly, when the phase of the AC power source changes, current flows into the light emitting diode along different paths.

On the other hand, the size of the light emitting cells in the full-wave light emitting unit may be the same as the size of the light emitting cells in the half-wave light emitting unit, but since the light emitting cells in the full-wave light emitting unit emit light for the entire period of AC power, the light emitting area of the light emitting diode It is preferable that the size of the light emitting cells in the full wave light emitting unit is larger than the size of the light emitting cells in the half wave light emitting unit in order to increase.

According to the present invention, it is possible to provide a light emitting diode that can increase the use efficiency of the light emitting cells while alleviating the increase in the reverse voltage applied to the light emitting cells in the light emitting diode.

Hereinafter, with reference to the accompanying drawings will be described embodiments of the present invention; The following embodiments are provided as examples to ensure that the spirit of the present invention can be fully conveyed to those skilled in the art. Accordingly, the present invention is not limited to the embodiments described below and may be embodied in other forms. In the drawings, widths, lengths, thicknesses, and the like of components may be exaggerated for convenience. Like numbers refer to like elements throughout.

1 is a schematic circuit diagram illustrating a light emitting diode 100 according to an embodiment of the present invention.

Referring to FIG. 1, the light emitting diode 100 has a plurality of light emitting cells 10 and 20. The light emitting cells 10 and 20 are formed on a single substrate and are electrically connected to each other through a wire.

The light emitting diode 100 includes half-wave light emitting units h1, h2, h3, and h4 and full-wave light emitting units a1 and a2. The half-wave light emitting units h1, h2, h3, and h4 each have a first terminal (for example, an anode terminal) and a second terminal (for example, a cathode terminal), and the radio wave emitting units a1 and a2, respectively. It has a third terminal (eg an anode terminal) and a fourth terminal (eg a cathode terminal). Wires are connected to the first to fourth terminals to electrically connect the light emitting units h1, h2, h3, h4, a1, and a2.

The half-wave light emitting units h1, h2, h3, and h4 each have at least one light emitting cell 10, and the full-wave light emitting units a1 and a2 each have at least one light emitting cell 20. When a plurality of light emitting cells are included in these light emitting units h1, h2, h3, h4, a1, and a2, the light emitting cells in the light emitting units are connected to each other in series.

Meanwhile, each third terminal of the radio wave emitting units a1 and a2 is electrically connected to the second terminals of two half wave light emitting units, and each fourth terminal of the radio wave emitting units a1 and a2 is electrically connected. Is electrically common connected to the first terminals of another two half-wave light emitting units. For example, as shown in FIG. 1, the third terminal of the radio wave emitting unit a2 is electrically connected to the second terminals of the half wave light emitting units h3 and h4 in common, and the radio wave emitting unit a2 is provided. The fourth terminal of is commonly connected to the first terminals of the half-wave light emitting units h1 and h2.

In addition, one half-wave light emitting unit is disposed between the third terminal of one of the two light emitting units a1 and the fourth terminal of the other one of the other light emitting units a1 and a2. (h1) is connected in series, and another half-wave light emitting unit h3 is connected in series between the fourth terminal of the one radio wave emitting unit a1 and the third terminal of the other radio wave emitting unit a2. .

Meanwhile, the light emitting diode 100 may have terminals t1 and t2 for connecting an external power source, and the terminals t1 and t2 are first and second terminals of two half-wave light emitting units, respectively. Is electrically connected to the Two half-wave light emitting units connected to the terminal t1 are connected to the full-wave light emitting unit a1, and two half-wave light emitting units connected to the terminal t2 are connected to the other full-wave light emitting unit.

An operation when an AC power source is connected to the terminals t1 and t2 will be described.

First, when a positive voltage is applied to the terminal t1, the current is generated by the half-wave light emitting unit h2 (upper left), the full-wave light emitting unit a1, in which the first terminal is connected to the terminal t1 through the terminal t1, Half-wave light emitting unit h3, full-wave light emitting unit a2, half-wave light emitting unit h2,... , And flows to the terminal t2 via the full-wave light emitting unit a1, the half-wave light emitting unit h3, the full-wave light emitting unit a2 and the half-wave light emitting unit h2, and thus light is emitted from these light emitting units.

Next, when a positive voltage is applied to the terminal t2, the current is generated by the half-wave light emitting unit h4 (lower right) connected with the first terminal to the terminal t2 through the terminal t2, the full-wave light emitting unit a2, Half-wave light emitting unit h1, full-wave light emitting unit a1,... , The half wave light emitting unit h4, the full wave light emitting unit a2, the half wave light emitting unit h1, the full wave light emitting unit a1 and the half wave light emitting unit h4, and flow to the terminal t1, and thus these light emitting units Light is emitted from

While the positive voltage is applied to the terminal t1, the half-wave light emitting units h2 and h3 and the light emitting units a1 and a2 emit light, while the positive voltage is applied to the terminal t2. , Half-wave light emitting units h1 and h4 and full-wave light emitting units a1 and a2 emit light. That is, the half-wave light emitting units h1 and h4 and the half-wave light emitting units h2 and h3 alternately emit light according to the phase of the AC power, and the radio wave light emitting units a1 and a2 change the phase of the AC power. It emits light in all phases regardless.

Accordingly, the number of light emitting cells driven as many as the number of light emitting cells in the full-wave light emitting units a1 and a2 can be increased, compared to a light emitting diode in which two conventional series arrays operate alternately. Furthermore, when the half-wave light emitting units all have a single light emitting cell, the use efficiency of the light emitting cell can be maximized.

Meanwhile, the reverse voltage applied to the half wave light emitting units h1, h2, h3, and h4 will be described.

A positive voltage is applied to the half wave light emitting units h2 and h3 and the full wave light emitting units a1 and a2 during a half period in which a positive voltage is applied to the terminal t1 so that the half wave light emitting units h2 and h3 emit light. Is applied, and a reverse voltage is applied to the half-wave light emitting unit h1 or h4. The reverse voltage applied to the half-wave light emitting unit h1 is two radio wave emitting units a1 and a2 connected to its first terminal and a second terminal, respectively, and one connected to the radio wave emitting units a1 and a2. It is equal to the sum of the forward voltages applied to the half wave light emitting unit h3. As described above, the reverse voltage applied to the half wave light emitting unit h4 is equal to the sum of the reverse voltages applied to the two light wave emitting units a1 and a2 and one half wave light emitting unit h2.

Similarly, during the next half period in which a positive voltage is applied to the terminal t2 so that the half wave light emitting units h1 and h4 emit light, a reverse voltage is applied to the half wave light emitting units h2 and h3, and the half wave light emission. The reverse voltage applied to the unit h2 or h3 is equal to the sum of the forward voltages applied to the two full wave light emitting units a1 and a2 and one half wave light emitting unit h4 or h1.

When the half wave light emitting units h1, h2, h3, and h4 are configured with the same light emitting cells, the reverse voltage applied to these half wave light emitting units mainly depends on the number of light emitting cells of the full wave light emitting units. Therefore, it is possible to provide a light emitting diode that is safe against reverse voltage by controlling the number of light emitting cells in the light emitting units.

According to the present embodiment, the half-wave light emitting units h1, h2, h3, and h4 and the full-wave light emitting units a1 and a2 are adopted, and the number of light emitting cells in them is controlled, thereby being safe to reverse voltage and emitting light cells. It is possible to provide a light emitting diode that can increase the use efficiency.

FIG. 2 is a schematic circuit diagram illustrating an example of a light emitting diode in which both half-wave light emitting units and full-wave light emitting units are configured as a single light emitting cell, and FIGS. 3 and 4 are schematic plan views illustrating the light emitting diode of FIG. 2. .

2, 3, and 4, the light emitting cells 10 that operate for half a cycle and the light emitting cells 20 that operate during a full cycle are positioned on a single substrate 21. These light emitting cells 10 and 20 may be formed together through the same manufacturing process, and the light emitting cell 10 and the light emitting cell 20 may have different sizes. These light emitting cells 10 have a first terminal and a second terminal, the light emitting cell 20 has a third terminal and a fourth terminal, and a wiring 23 is connected to these terminals.

As described above, the light emitting cells 20 are commonly connected to the first terminals of the two light emitting cells 10 and to the second terminals of the other two light emitting cells 10. In addition, the light emitting cells 10 are connected in series between the third terminal and the fourth terminal of the neighboring light emitting cells 20, and between the fourth terminal and the third terminal, respectively.

As shown in FIGS. 4A and 4B, the light emitting cells 10a and 10b formed on the single substrate 21 may share the first terminal or the second terminal. It can be formed to share a semiconductor layer. For example, the light emitting cells 10a of FIG. 4 (a) are formed by sharing a lower semiconductor layer, and the light emitting cells 10b of FIG. 4 (b) are formed by sharing an upper semiconductor layer. As shown, the light emitting cells 10a of FIG. 4A may share a second terminal, and the light emitting cells of FIG. 4B may share a first terminal.

The wiring structure for connecting the light emitting cells 10 and 20 is not particularly limited. As shown, another wiring may be connected to the wiring connecting the light emitting cells 10 so that the light emitting cell 20 may be electrically connected to the light emitting cells 10. Alternatively, the two light emitting cells 10 and one light emitting cell 20 may be electrically connected to each other through two wires. For example, the third terminal of the light emitting cell 20 and the second terminals of the two light emitting cells 10 may be connected through wires, respectively.

The wirings 23 may be formed using an existing wiring process, and for example, may be formed by an air support process or a step cover process. In addition, the wirings and the terminals may be formed by the same process and the same material.

Hereinafter, with reference to FIGS. 5, 6, 7, 8, 9 and 10, the structure of the light emitting cells of the AC LED according to an embodiment of the present invention and the connection through the wiring will be described. 5 and 6 are schematic cross-sectional views taken along cut line A-A of FIG. Here, FIG. 5 is a partial cross-sectional view for explaining that the light emitting cells are electrically connected by wires formed by an air bridge process, and FIG. 6 is a view illustrating that the light emitting cells are electrically connected by wires formed by a step cover process. It is a partial cross section for doing so.

Referring to FIG. 5, a plurality of light emitting cells 158 are spaced apart from each other on a single substrate 151. Each of the light emitting cells includes a first conductivity type lower semiconductor layer 155, an active layer 157, and a second conductivity type upper semiconductor layer 159. The active layer 157 may be a single quantum well structure or a multi quantum well structure, and its material and composition are selected according to the emission wavelength required. For example, the active layer may be formed of an AlInGaN-based compound semiconductor, such as InGaN. The lower and upper semiconductor layers 155 and 159 may be formed of a material having a larger band gap than the active layer 157, and may be formed of an AlInGaN-based compound semiconductor such as GaN.

The buffer layer 153 may be interposed between the lower semiconductor layer 155 and the substrate 151. The buffer layer 153 is employed to mitigate lattice mismatch between the substrate 151 and the lower semiconductor layer 155. The buffer layer 153 may be spaced apart from each other as shown, but is not limited thereto. When the buffer layer 153 is formed of an insulating material or a high resistance material, the buffer layer 153 may be continuous to each other.

As illustrated, the upper semiconductor layer 159 is positioned above a portion of the lower semiconductor layer 155, and the active layer is interposed between the upper semiconductor layer 159 and the lower semiconductor layer 155. In addition, the transparent electrode layer 161 may be positioned on the upper semiconductor layer 159. The transparent electrode layer 161 may be formed of an indium tin oxide (ITO) material or Ni / Au.

Meanwhile, wires 167 electrically connect the light emitting cells 158. The wirings 167 connect the lower semiconductor layer 155 of one light emitting cell and the transparent electrode layer 161 of the light emitting cell adjacent thereto. As shown in the drawings, the p-electrode 164 formed on the transparent electrode layer 161 may be connected to the n-electrode 165 formed on the exposed region of the lower semiconductor layer 155. Here, the electrodes 164 and 165 function as anode terminals and cathode terminals of the light emitting cells, respectively. Here, the wirings 167 are formed by an air bridge process, and portions except for the contact portion are physically separated from the substrate 151 and the light emitting cells 158. The wirings 167 form an array in which light emitting cells are connected in series on a single substrate 151.

Referring to FIG. 6, the wirings connecting the light emitting cells 158 may be formed by a step cover process. That is, except for portions for contacting the wirings 187, all the layers of the light emitting cells and the substrate 151 are covered with the insulating layer 185. The wirings 187 electrically connect the light emitting cells on the insulating layer 185.

For example, the insulating layer 185 has openings exposing the electrodes 164 and 165, and the wirings 187 connect the electrodes 164 and 165 of neighboring light emitting cells to each other through the openings. To connect the light emitting cells in series.

The electrodes 164 and 165 of the light emitting cells may be made of the same material as the wires 187 and may be formed together when the wires 187 are formed. That is, the electrodes 164 and 165 are not separately formed, and the wires 187 may be directly and electrically connected to the lower semiconductor layer 157 and the upper semiconductor layer 159 or the transparent electrode layer 161. Can be.

7 and 8 are schematic partial cross-sectional views taken along cut line B-B in FIG. 4 (a). Here, FIG. 7 is a partial cross-sectional view for explaining that the light emitting cells are electrically connected by the wirings 167 formed by the air bridge process, and FIG. 8 is a light emitting cell by the wirings 187 formed by the step cover process. It is a partial sectional drawing for demonstrating that they are electrically connected.

As described above, the light emitting cells 158 have a similar structure, but the first conductive lower semiconductor layer 153 is formed to be shared with each other. In this case, an electrode, for example, the n-electrode 165 formed on the first conductive lower semiconductor layer 153 may be formed between the second conductive upper semiconductor layers 159, and preferably, the n-electrode ( 165 may be formed such that the distance from the second conductive upper semiconductor layers 159 is constant. Meanwhile, the second conductive upper semiconductor layers 159 are separated from each other.

9 and 10 are schematic partial cross-sectional views taken along cut line C-C of FIG. 4 (b). Here, FIG. 9 is a partial cross-sectional view for explaining that the light emitting cells are electrically connected by the wirings 167 formed by the air bridge process, and FIG. 10 is a light emitting cell by the wirings 187 formed by the step cover process. Partial sectional view for explaining that they are electrically connected.

As described above, the light emitting cells 158 have a similar structure, but the second conductive upper semiconductor layers 159 are formed to be shared with each other. In this case, the first conductivity type lower semiconductor layer 155 and the active layer 157 formed below are separated from each other, and the space between the lower semiconductor layers 155 may be filled with the insulating layer 189.

11 illustrates plan views for explaining shapes of various light emitting cells and various electrode arrangements that may be used in a light emitting diode according to an exemplary embodiment of the present invention. Here, although the electrodes are shown as connected to the wires, as described above, the wires and the electrodes may be formed together by the same process.

Referring to FIG. 11A, electrodes, for example, an n-electrode and a p-electrode, are formed on the first conductive lower semiconductor layer and the second conductive upper semiconductor layer of the light emitting cell, respectively. It includes an extension that extends from the portion to which the wiring is connected. The extension of the n-electrode and the extension of the p-electrode are formed symmetrically with each other and may be formed in parallel with each other. The wirings may be connected to the central portion of the corresponding electrode, respectively.

Referring to FIG. 11B, electrodes (n-electrode and p-electrode) are formed on the first conductive lower semiconductor layer and the second conductive upper semiconductor layer of the light emitting cell, respectively. An electrode, eg, a p-electrode, formed on the semiconductor layer may be formed in the center portion on the light emitting region. The electrodes may be formed to include extensions, as described with reference to FIG. 11A.

Referring to FIG. 11C, the wirings are generally similar to those of FIG. 11A, but the wirings are connected to the electrodes near the edges of the first conductive lower semiconductor layer and the second conductive lower semiconductor layer, respectively. The wirings are connected to the electrodes at a diagonally symmetrical portion of the light emitting cell, and the electrodes each have extensions extending along the edge of the light emitting cell at the portion where the wirings are connected. The extensions can be formed parallel to one another, so that the distance between the extensions can be substantially the same.

Referring to FIG. 11 (d), electrodes are formed on the first conductive lower semiconductor layer and the second conductive upper semiconductor layer of the light emitting cell, and the electrodes are positioned symmetrically with each other in diagonalness. The electrodes may have a plurality of extensions, which may be formed along the edge of the light emitting cell. Also, the corresponding extensions of the n- and p-electrodes may be parallel to each other. In addition, the symmetrical, positioned on the diagonal of the light emitting cell in a symmetrical form with each other.

Referring to FIG. 11E, the light emitting cells may have a trapezoidal shape. In this case, one of the electrodes may have a triangular shape. For example, as shown, when the light emitting region has a rectangular shape, the n-electrode may have a triangular shape. In contrast, when the light emitting region has a trapezoidal shape, the p-electrode may have a triangular shape.

Referring to FIG. 11 (f), the wirings may be connected to the electrodes on the same side of the light emitting cell. The electrodes may have extensions extending along edges of the first conductivity type lower semiconductor layer and the second conductivity type upper semiconductor layer from the portions to which the wirings are connected. These extensions can be parallel to each other.

Referring to FIG. 11G, the wirings may be connected to the electrodes at opposite sides of the light emitting cell. The electrodes may have extensions extending along edges of the first conductivity type lower semiconductor layer and the second conductivity type upper semiconductor layer from the portions to which the wirings are connected. These extensions can be parallel to each other.

Referring to FIG. 11 (h), the light emitting cells may have a parallelogram shape. The electrodes may each have a plurality of extensions extending near the edges, each of which may extend along the edge of the light emitting cell. In addition, corresponding extensions of the n- and p-electrodes may be formed parallel to each other.

In the above, although the structure of the light emitting cells and the connection of the light emitting cells through the wiring has been described schematically, various modifications may be made to the structure and the wiring of the light emitting cells, and the present invention provides a structure of a specific light emitting cell and a specific wiring structure. It is not limited to.

Meanwhile, in the present embodiment, an example in which the short wave light emitting units and the full wave light emitting units are configured as a single light emitting cell will be described. However, these light emitting units may be configured as a plurality of light emitting cells. In particular, the short-wave light emitting unit may be composed of one light emitting cell and the full-wave light emitting units may be composed of a plurality of light emitting cells. The half-wave light emitting units each constitute one light emitting cell, and the radio wave light emitting units each include two light emitting cells.

Referring to FIG. 12, the radio light emitting units each have two light emitting cells. Therefore, the use efficiency of the light emitting cells is increased as compared with the case where the radio light emitting units each have one light emitting cell.

The radio light emitting units may have two or more light emitting cells, and the radio light emitting units do not need to have the same number of light emitting cells. On the other hand, when the number of light emitting cells in the full wave light emitting units increases, the reverse voltage of the half wave light emitting unit increases. Therefore, the number of light emitting cells in the full-wave light emitting unit is selected in consideration of the reverse voltage of the half-wave light emitting unit, preferably in the range of 1 to 10.

While some embodiments of the present invention have been described above by way of example, those skilled in the art will appreciate that various modifications and variations can be made without departing from the essential features of the present invention. Therefore, the embodiments described above should not be construed as limiting the technical spirit of the present invention but merely for better understanding. The scope of the present invention is not limited by these embodiments, and should be interpreted by the following claims, and the technical spirit within the scope equivalent thereto should be interpreted as being included in the scope of the present invention.

1 is a schematic circuit diagram illustrating a light emitting diode according to an embodiment of the present invention.

2 is a schematic circuit diagram illustrating an example of a light emitting diode according to an embodiment of the present invention.

3 is a schematic plan view illustrating the light emitting diode of FIG. 2.

4 (a) and 4 (b) are other schematic plan views for describing the light emitting diode of FIG. 2.

5 and 6 are schematic partial cross-sectional views taken along cut line A-A of FIG. 3 to illustrate light emitting diodes usable in embodiments of the present invention, respectively.

7 and 8 are partial cross-sectional views taken along cut line B-B in FIG. 4 (a).

9 and 10 are partial cross-sectional views taken along the cut line C-C of FIG. 4 (b).

11 is a plan view illustrating various shapes and various electrode arrangements of light emitting cells used in light emitting diodes according to embodiments of the present disclosure.

12 is a schematic circuit diagram illustrating another example of a light emitting diode according to an embodiment of the present invention.

Claims (19)

In the light emitting diode having a plurality of light emitting cells formed on a substrate, At least four half-wave light emitting units each having at least one light emitting cell and having first and second terminals at both ends thereof; And At least two light emitting units each having at least one light emitting cell and having a third terminal and a fourth terminal at both ends; The third terminal of at least one of the radio light emitting units is electrically connected to the second terminals of two half wave light emitting units, and the at least one fourth terminal of the radio light emitting units is another two half wave light emitting unit. Electrically connected to the anode terminals of the At least one half-wave light emitting unit is connected in series between the third terminal of one of the two light emitting units and the fourth terminal of the other one of the light emitting units, and the fourth of the one light emitting unit A light emitting diode in which another half-wave light emitting unit is connected in series between a terminal and a third terminal of the other full wave light emitting unit. The method according to claim 1, At least one third terminal of the full-wave light emitting units is electrically connected to the second terminals of the two half-wave light emitting units so that the light emitting cells adjacent to each second terminal in the two half-wave light emitting units have the same polarity. Light emitting diodes, characterized in that by sharing. The method according to claim 2, Wherein the light emitting cells adjacent to each second terminal in the two half-wave light emitting units share a semiconductor layer of the same polarity, and the electrodes of the same polarity are formed on the shared same polarity semiconductor layer. The method according to claim 2, The light emitting diode, characterized in that the electrode of the same polarity is n-electrode. The method according to claim 2, The light emitting diode, characterized in that the electrode of the same polarity is a p-electrode. The method according to claim 1, And the radio light emitting units each have a plurality of light emitting cells. The method according to claim 1, And at least two bonding pads for connecting to an external power source, each of the bonding pads being electrically connected to a first terminal of one half-wave light emitting unit and a second terminal of the other half-wave light emitting unit. Light emitting diode. The method according to claim 7, The two bonding pads are further formed on the substrate. The method according to claim 8, And a plurality of bonding pads and the plurality of light emitting cells formed on the substrate to have a rectangular shape as a whole. The method according to claim 1, The size of the light emitting cell in the full-wave light emitting unit is larger than the size of the light emitting cell in the half-wave light emitting unit. The method according to claim 1, Each of the plurality of light emitting cells includes an n-electrode and a p-electrode, and at least one of the plurality of light emitting cells further includes an extension extending from the n-electrode or the p-electrode. diode. The method according to claim 11, At least one of the plurality of light emitting cells further includes an extension extending from each of the n-electrode and the p-electrode, and an extension extending from the n-electrode and an extension extending from the p-electrode are symmetric with each other. A light emitting diode, characterized in that. The method according to claim 12, And an extension extending from the n-electrode and an extension extending from the p-electrode are parallel to each other. The method according to claim 12, And the extension portion extending from the n-electrode and the extension portion extending from the p-electrode are symmetrical with each other on a diagonal line of the light emitting cell. The method according to claim 12, And the plurality of light emitting cells are substantially equal in distance between an extension extending from an n-electrode and an extension extending from the p-electrode. The method according to claim 11, At least one of the plurality of light emitting cells further includes at least two extensions extending from the n-electrode and the p-electrode, respectively, extending from the n-electrode and extending from the p-electrode. Light emitting diode, characterized in that the extension is symmetrical with each other. 18. The method of claim 16, And each of the extensions extending from the n-electrode is parallel to each of the extensions extending from the p-electrode corresponding thereto. The method according to claim 1, Light emitting diode, characterized in that the structure of claim 1 is formed repeatedly. 18. The method of claim 16, A light emitting diode comprising only a structure in which the structure of claim 1 is repeatedly formed.

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