JP2005252191A - Light-emitting device for increasing luminous action region area - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a light-emitting device for increasing a luminous action region area. <P>SOLUTION: A light-emitting device comprises a second epitaxial layer and at least one first epitaxial layer provided successively on a die substrate; at least one first electrode on the upper surface of the first epitaxial layer; and a second electrode that passes through the first epitaxial layer, is insulated by the first epitaxial layer, and is electrically connected to the second epitaxial layer. The first and second electrodes are separated each other and are arranged so that they cross each other. In addition, first and second power supply circuits are affixed onto the power supply substrate individually corresponding to the first and second electrodes, based on the positions of the first and second electrodes, and are electrically connected. A first communication circuit is electrically connected to the plurality of first power supply circuits. A second power supply circuit is electrically connected to the second communication circuit. The first and second communication circuits are provided on the power supply substrate instead of on a light-emitting diode, and increase a luminous action region area for improving emission efficiency. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a kind of light emitting device, and more particularly to a light emitting device capable of increasing a light emitting action area, wherein a first communication circuit and a second communication circuit are provided on a power supply board, and a light emitting action area of a direct light emitting diode It is related with the light-emitting device formed so that it may not occupy.

  Light emitting diodes are widely used in computer peripheral devices, communication products, and other electronic devices because they have advantages such as small volume, light weight, low power consumption, and long life. In general, mass-produced light emitting diodes grow an epitaxial layer having a pn junction on a substrate, for example, a sapphire substrate or a silicon carbide substrate, and introduce drive voltages from both sides of the p-type epitaxial layer and the n-type epitaxial layer. At this time, light is projected onto the pn junction by electron-hole recombination.

  A known light emitting diode structure is as shown in FIGS. 1 and 2, which are a side view and a structural plan view of a known light emitting diode device, respectively. As shown in the drawing, a second epitaxial layer 15 is grown on the information of the die substrate 11, and the second epitaxial layer 15 is defined with a protruding first surface 153 and a recessed second surface 155, of which the first surface A first epitaxial layer 13 is formed on 153, and a light emitting action region (that is, first surface 153) having a function of naturally projecting light is formed between the first epitaxial layer 13 and the second epitaxial layer 15. Is done. The first electrode 17 is formed on a part of the upper surface of the first epitaxial layer 13, and the second electrode 19 is provided on the second surface 155 of the second epitaxial layer 15 where the first epitaxial layer 13 is not provided. In addition, a first bonding pad 171 for connection with an external circuit is provided on a part of the upper surface of the first electrode 17, and a second bonding pad 191 for connection with an external circuit is provided on the upper surface of the second electrode 19. Is provided. When a forward bias driving power source is introduced to the first electrode 17 and the second electrode 19, the current enters the light emitting region, thereby generating light.

  Regarding the light emitting diode, the larger the working area of the light emitting action region, the larger the light emission amount. The greater the current passing through the light emitting area, the greater the emission intensity. However, if the current density passing through the light emitting action region is not uniform, the current density of some light emitting action regions becomes excessively high, and a phenomenon in which the current density of some light emitting action regions becomes too low is very easily formed. Become. When the current density in the light emitting region becomes excessive and reaches saturation, the light emission efficiency decreases, and an increase in the local working temperature of the light emitting region can be formed, which in turn can cause damage. On the other hand, when the current density in a part of the light emitting action region becomes excessively low, the light emitting efficiency cannot be sufficiently exhibited, and the apparatus is wasted. For this reason, how to increase the light emission efficiency by allowing the working current to uniformly pass through the light emission region is a major challenge in manufacturing and designing the light emitting diode.

  In the structure of the light emitting diode described above, the first electrode 17 and the second electrode 19 have an asymmetric distribution in terms of geometry, and therefore, a phenomenon in which the current density distribution is not uniform is very easily formed. In order to prevent such a phenomenon of non-uniform current density, the industry provides a light emitting diode structure capable of uniformly distributing the working current density. For example, as shown in the structural plan view of another known light emitting diode in FIGS. According to this, the light emitting diode 20 has a second epitaxial layer 25 and a second epitaxial layer 25 formed on the upper surface of the die substrate 21 to define a plurality of protruding first surfaces 253 and a recessed second surface 255. The first surface 253 and the second surface 255 are arranged so as to be spaced apart from each other and intersect. Among them, the first epitaxial layer 23 is formed on the first surface 253, and the light emitting action region (that is, the first surface 253) is formed on the joint surface between the first epitaxial layer 23 and the second epitaxial layer 25. A first electrode 271 is formed on the upper surface of the first epitaxial layer 23, a second electrode 291 is formed on the upper surface of the second surface 255 of each second epitaxial layer 25, and both the first electrode 271 and the second electrode 291 are formed. Similarly, the space between the first surface 253 and the second surface 255 is arranged so as to be separated from each other and cross each other. In addition, the first communication electrode 273 that communicates with the plurality of first electrodes 271 and directly contacts the first epitaxial layer 23, and the second communication layer that communicates electrically with the plurality of second electrodes 291 and that directly contacts the first epitaxial layer 23. A second communication electrode 293 is provided in contact with the 25 second surface 255. The first electrodes 271 can be electrically connected. Similarly, the second electrodes 291 can also be electrically connected. The first electrodes 271 and the second electrodes 291 are arranged so as to be separated from each other and intersect with each other, and are geometrically symmetrical. As a result, it is possible to effectively reduce the phenomenon that the working current density in the light emitting action region becomes non-uniform.

  However, although the above-described light emitting diode structure is effective in reducing the phenomenon of uneven distribution of the working current density in the light emitting diode 253, the second communication electrode 293 is directly above the second surface 255 of the second epitaxial layer 25. In other words, a part of the second surface 255 on which the second communication circuit 293 can be installed must be scraped to increase the occupation range of the second surface 255 on the light emitting diode 20. The action area of the light emission action area is reduced. As a result, the second communication electrode 293 occupies the area of a part of the light emitting action region, thereby forming a reduction in the light output amount and the light emission luminance.

  Therefore, in response to the above-mentioned disadvantages of the known technology, a new light emission that increases the light emission working area of the light emitting diode to increase the light emission luminance and distribute the working current density uniformly, thereby extending its service life. Providing the device is the focus of the present invention.

  Therefore, a main object of the present invention is to provide a light emitting device capable of increasing a kind of light emitting action area, which includes a first communication circuit and a second communication circuit installed on a power supply board as light emitting diodes. The first communication electrode can be used in place of the known first communication electrode and second communication electrode on the light-emitting die by enabling direct electrical connection to a plurality of corresponding first electrodes and second electrodes on the die. In addition, it is assumed that the second communication electrode prevents the area of the light emitting action area from being occupied, thereby achieving the effect of increasing the light output amount and the light emission luminance.

  Another object of the present invention is to provide a light-emitting device capable of increasing a kind of light-emitting action area, which is a design in which a plurality of first electrodes and second electrodes are designed in a geometrically symmetric structure, thereby providing light-emitting action. It is assumed that the light-emitting device is configured to uniformly distribute the current density in the region, thereby improving the light-emitting efficiency and extending the service life of the product.

  Another object of the present invention is to provide a light emitting device capable of increasing a kind of light emitting active area, which includes a first electrode and a second electrode geometry of a light emitting diode die on a power supply substrate. It is assumed that the light-emitting device can achieve the goal of increasing the package density by directly providing the first power supply circuit and the second power supply circuit pattern arranged in view of the above.

  Still another object of the present invention is to provide a light emitting device capable of increasing a kind of light emitting active area, in which a bonding pad is disposed on a power supply substrate and directly on a light emitting diode die. Therefore, it is assumed that the light-emitting device prevents the light-shielding effect on the light-emitting diode from being formed by the wire-bonding process.

The invention of claim 1 comprises at least one light emitting diode die and a power supply substrate,
Each light emitting diode die includes a die substrate, the die substrate being provided with a second epitaxial layer, wherein the second epitaxial layer is defined with at least one first surface and at least one second surface, and further on the first surface. A first epitaxial layer is formed, a light emitting action region is formed between the first epitaxial layer and the second epitaxial layer, at least one first electrode is provided on a partial surface of the first epitaxial layer, 2 at least one second electrode is provided on a partial surface of the epitaxial layer;
The power supply board is provided with at least one first power supply circuit and at least one second power supply circuit at positions corresponding to the first electrode and the second electrode on the surface thereof, and each first power supply is provided. The circuit is electrically connected by the first communication circuit, each second power supply circuit is electrically connected by the second communication circuit, and the first power supply circuit and the corresponding first electrode are electrically connected to each other The light emitting device capable of increasing the area of the light emitting action region is characterized in that the second power supply circuit and the corresponding second electrode are electrically connected to each other.
According to a second aspect of the present invention, there is provided a light-emitting device capable of increasing the light-emitting action area, according to claim 1, wherein the power supply substrate is a surface insulating substrate. It is said.
According to a third aspect of the present invention, in the light emitting device capable of increasing the area of the light emitting action region according to the second aspect, the power supply substrate is made of silicon nitride (Si ₃ N ₄ ), aluminum nitride (AlN), silicon carbide (SiC), A light-emitting device capable of increasing the area of the light-emitting region, characterized by being formed of either gallium nitride (GaN) or a combination thereof.
According to a fourth aspect of the present invention, in the light emitting device capable of increasing the area of the light emitting action region according to the first aspect, a flip chip package system is adopted for the light emitting diode die, and the light emitting diode die is reversed and bonded to the power supply substrate. Thus, the light emitting device capable of increasing the area of the light emitting action region is provided.
According to a fifth aspect of the present invention, there is provided the light emitting device capable of increasing the light emitting action region area according to the first aspect, wherein the electrostatic device is fixed to the power supply board and electrically connected to the first communication circuit and the second power supply circuit. A light-emitting device capable of increasing the area of the light-emitting action region, further comprising a discharge protection device.
The invention according to claim 6 is the light emitting device capable of increasing the area of the light emitting action region according to claim 5, wherein the electrostatic discharge protection device is either a zener diode or a Schottky barrier diode. The light emitting device can increase the area of the region.
According to a seventh aspect of the present invention, there is provided the light emitting device capable of increasing the light emitting action area according to the first aspect, wherein the electrostatic device is fixed to the power supply board and electrically connected to the second communication circuit and the first power supply circuit. A light-emitting device capable of increasing the area of the light-emitting action region, further comprising a discharge protection device.
The invention according to claim 8 is the light emitting device capable of increasing the area of the light emitting action region according to claim 1, wherein the die substrate is formed of any one of silicon carbide, gallium arsenide, sapphire, gallium nitride, and combinations thereof. The light emitting device is characterized in that the area of the light emitting action region can be increased.
According to a ninth aspect of the present invention, in the light emitting device capable of increasing the area of the light emitting action region according to the first aspect, the plurality of second electrodes are arranged in any one of a linear arrangement, an annular arrangement, a cross arrangement and a combination thereof. Thus, a light emitting device capable of increasing the area of the light emitting region is provided.
The invention of claim 10 is the light emitting device capable of increasing the area of the light emitting action area according to claim 1, wherein an electrode insulating layer is provided on the side of the plurality of second electrodes. Can be increased.
The invention according to claim 11 is the light emitting device capable of increasing the area of the light emitting action region according to claim 1, wherein the second surface of the second epitaxial layer is lower than the first surface, and the area of the light emitting action area is increased. It is a possible light emitting device.
According to a twelfth aspect of the present invention, in the light emitting device capable of increasing the area of the light emitting action region according to the first aspect, at least one first bonding pad is provided in the first communication circuit, and at least one second in the second communication circuit. A light-emitting device capable of increasing the area of the light-emitting action region is provided with a bonding pad.
According to a thirteenth aspect of the present invention, in the light emitting device capable of increasing the area of the light emitting action region according to the first aspect, a bonding layer is provided between the first electrode and the first power supply circuit and between the second electrode and the second power supply circuit. A light emitting device capable of increasing the area of the light emitting region is provided.

  The light emitting device capable of increasing the area of the light emitting action area of the present invention can increase the area of the light emitting action area, and can thereby increase the light emission efficiency. Therefore, the present invention has novelty, inventive step and industrial utility value.

  According to the present invention, a light emitting device capable of increasing the area of the light emitting action region includes at least one light emitting die and one power supply substrate. The light emitting die includes a die substrate, the die substrate being provided with a second epitaxial layer, the second epitaxial layer being capable of defining at least one first surface and at least one second surface, A first epitaxial layer is formed thereon, a light emitting action region is naturally formed between the first epitaxial layer and the second epitaxial layer, and at least one first electrode is provided on a partial surface of the first epitaxial layer; At least one second electrode is provided on a partial surface of the second epitaxial layer. The power supply board is provided with at least one first power supply circuit and at least one second power supply circuit at positions corresponding to the first electrode and the second electrode on the surface thereof, respectively. The power supply circuit is electrically connected by the first communication circuit, each second power supply circuit is electrically connected by the second communication circuit, and the first power supply circuit is electrically connected to the corresponding first electrode. The second power supply circuit is electrically connected to the corresponding second electrode.

  5 to 7 are a structural plan view, a cross-sectional view taken along line CD, and a structural plan view of a power supply board according to a preferred embodiment of the present invention. As shown in the drawing, the light emitting device capable of increasing the area of the light emitting action region is formed by combining a light emitting diode die 30 and a power supply substrate 41. Among them, the light emitting diode die 30 has a second epitaxial layer 35 formed on the die substrate 31 and can define a first surface 353 from which the second epitaxial layer 35 protrudes and a recessed second surface 355, A first epitaxial layer 33 is further formed on the surface 353, whereby a light emitting action region (that is, the first surface 353) is naturally formed between the first epitaxial layer 33 and the second epitaxial layer 35. Usually, the die substrate 31 is composed of a material such as silicon carbide, gallium arsenide, sapphire, gallium nitride, etc., and the first epitaxial layer 33 and the second epitaxial layer 35 are made of gallium nitride (GaN), gallium phosphide (GaP), It is composed of a group 3-5 element such as indium gallium phosphide (InGaP) or aluminum gallium nitride (AlGaN).

  The first electrode 331 is provided on the upper surface of the first epitaxial layer 33, and the second electrode 351 is provided on both sides of the first electrode 331, whereby the second electrode 351 is formed on the second surface 355 of the second epitaxial layer 35. The first epitaxial layer 33 and the first electrode 331 are electrically insulated from each other by the electrode insulating layer 37. The first electrode 331 and the second electrode 351 are arranged so as to be spaced apart from each other and intersect so that the working current passes uniformly through the light emitting working region, thereby increasing the light emitting efficiency and excessively increasing the local current density. This prevents damage to the light emitting area.

In addition, at least one first power supply circuit 431 and second power supply circuit 451 are provided on the upper surface of the power supply substrate 41 at positions corresponding to the first electrode 331 and the second electrode 351 of the light emitting diode die 30. Directly provided. In addition, the first communication circuit 43 is further electrically connected to the first power supply circuit 431, and the second communication circuit 45 is also electrically connected to each second power supply circuit 451. The quantity of the first power supply circuit 431 and the second power supply circuit 451 is the same as the quantity of the first electrode 331 and the second electrode 351. Among them, the power supply substrate 41 includes silicon nitride (Si ₃ N ₄ ), aluminum oxide (Al ₂ O ₃ ), aluminum nitride (AlN), beryllium oxide (BeO), and dielectric materials (SiO ₂ , TiO ₂ , Si _3. Insulating materials such as silicon carbide (SiC), silicon (Si), and gallium nitride (GaN) coated with N ₄ or the like are used.

  Next, refer to the plan view of the structure after the combination of the light-emitting diode dies and the sectional view taken along the line EF in FIGS. As shown in the drawing, the LED die 30 is turned upside down, and the first electrode 331 and the second electrode 351 are bonded to the corresponding first power supply circuit 431 and second power supply circuit 451 by using the bonding layer 48. To do. In the present embodiment, the second second communication circuit 45 provided directly on the power supply substrate 41 is connected to the corresponding second electrode 351 through the plurality of second power supply circuits 451, and the light emitting diode die 20 has a well-known structure. Unlike the case where the second communication electrodes 293 directly provided on the second connection electrodes 293 are connected to the respective second electrodes 291 to prevent the second communication electrodes 293 from occupying the area of the light emitting action region, the present invention is The area of the light emitting action region can be increased. In addition, the bonding layer 47 may be made of tin-gold (AuSn), silicon-gold (AuSi), tin-lead (PbSn), tin-silver (SnAg), tin-indium-silver (SnInAg), silver solder or A material such as a tin paste can be selected, so that the heat of work in the light emitting region can be eliminated from the power supply substrate 41.

  10 and 11 are an exploded view and a combination display diagram of another embodiment of the present invention. As shown in the drawing, a first communication circuit 53 and a second communication circuit 55 are provided on the upper surface of the power supply substrate 51, and a plurality of first power supply circuits 531 are connected to the first communication circuit 53, and the second communication circuit 53 is connected. A plurality of second power supply circuits 551 are connected to the circuit 55. When the plurality of light emitting diode dies 30 are bonded onto the power supply substrate 51, the first electrode 331 and the second electrode 351 of each light emitting diode die 30 correspond to the corresponding first power supply circuit 531 and second power supply circuit 551. As a result, a plurality of light emitting diode dies 30 can be provided on the power supply substrate 51, whereby the light emission luminance can be increased. If light of different colors, such as blue light, green light, or red light, is selected for the plurality of light emitting diode dies 30, white light or full color light can be generated as a whole.

  In addition, an electrostatic discharge protection device 57, for example, a Zener diode or a Schottky barrier diode is fixed on the power supply substrate 51, and the two electrodes are connected to the first communication circuit 53 and the second power supply circuit 551. 1 or the second communication circuit 55 and one of the first power supply circuit 531 (not shown) and unexpectedly damage the light emitting diode die 30 formed by the electrostatic discharge effect. Thus, normal use of the light emitting diode die 30 can be ensured.

  The plurality of first power supply circuits 531 and the second power supply circuits 551 on the power supply substrate 51 are provided according to the number of the first electrodes 331 and the second electrodes 351 of the light emitting diode die 30, thereby reducing the power of the minimum area. The largest number of light emitting diode dies 30 can be mounted on the supply substrate 51, thereby increasing the package density and achieving the purpose of reducing the weight and thickness of the light emitting device and making it compact.

  12 to 14 are a structural plan view, a sectional view, and a structural plan view of a power supply substrate of a light emitting diode die according to still another embodiment of the present invention. As shown in the figure, a die substrate 61 of the light emitting diode die 60 is provided, and a second epitaxial layer 65 is provided on the upper surface thereof, and a plurality of first surfaces 653 projecting from the second epitaxial layer 65 and a plurality of recessed portions are provided. A second surface 655 is defined. A first epitaxial layer 63 is provided on each first surface 653, and a light emitting action region (that is, the first surface 653) is naturally formed between each first epitaxial layer 63 and the second epitaxial layer 65. A first electrode 631 is provided on the upper surface of each first epitaxial layer 63, a second electrode 651 is provided on the upper surface of the second surface 655 of the second epitaxial layer 65, and the first electrode 631 and the second electrode 651 are provided. They are arranged so as to be separated from each other and cross each other. In addition, a single electrode insulating layer 67 is provided around the second electrode 651 to prevent direct contact of the second electrode 651 with the first epitaxial layer 63 and the first electrode 631.

  A first communication circuit 73 and a second communication circuit 75 are provided in the information of the power supply board 71, a plurality of first power supply circuits 731 are connected to the first communication circuit 73, and a plurality of second communication circuits 75 are connected to the second communication circuit 75. A power supply circuit 751 is connected. Among them, the positions and quantities of the plurality of first power supply circuits 731 and the plurality of second power supply circuits 751 are provided in accordance with the positions and quantities of the first electrode 631 and the second electrode 651.

  Further, a first bonding pad 735 is provided at an appropriate position of the first communication circuit 73, and a second bonding pad 755 is provided at an appropriate position of the second communication circuit 75, which is used for the wire bonding process. The first bonding pad 735 and the second bonding pad 755 are provided on the power supply substrate 71 and are not directly provided on the light emitting diode die 60, thereby directly connecting to the light emitting diode die 60 in the wire bonding process. It is possible to prevent the formation of damage, thereby protecting the normal operation of the light emitting diode die 60.

  Finally, FIG. 15 and FIG. 16 are structural plan views and sectional views thereof after the combination of the embodiments shown in FIG. 12 and FIG. As shown in the drawing, after turning over the light emitting diode die 60, the light emitting diode die 60 is attached to the power supply substrate 71, the plurality of first electrodes 631 are connected to the corresponding first power supply circuit 731, and the second electrode 651 is connected to the corresponding second electrode 651. Connect to the power supply circuit 751.

  The first electrode 631 and the second electrode 651 are disposed so as to be separated from each other and intersect with each other, and have symmetry, so that the working current density in each light emitting region is very uniform. In addition, each second electrode 651 is made conductive by a second communication circuit 75 provided on the power supply substrate 71, whereby the present invention provides each second electrode 291 on the light emitting diode die 20 in a known structure. Since the second communication electrode 293 to be connected needs to be provided directly, there is no problem of occupying the area of the light emitting region.

  In addition, although all of the above-described embodiments have been described with the second electrode having a linear array, the present invention is not limited to this, and can be implemented by a circular array, a crossed array, and other geometrically symmetric arrays. It is necessary that the communication circuit 73 and the second communication circuit 75 are provided on the power supply substrate 71 and not directly provided on the light emitting diode die 60, thereby achieving the effect of increasing the light emitting area.

  Further, in each of the above-described embodiments, the second electrodes 351 and 651 of the respective light-emitting diode dies 30 and 60 are designed to have a horizontal altitude similar to or the same as the first electrodes 331 and 631, but under the technical features of the present invention. The well-known light-emitting diode die 20 shown in FIG. 4 is also applicable, and only the second communication circuit 293 needs to be provided on the power supply board 41, and the effect desired to be achieved by the present invention is achieved.

  In each of the above-described embodiments, the power supply substrates 41, 51, and 71 are made of an insulating material. However, in different embodiments, the materials may be replaced with materials such as silicon sulfide, silicon, and gallium arsenide. The supply substrate may be further covered with an insulating material.

It is a structure side view of a known light emitting diode device. It is a structure top view of a known light emitting diode device. It is a structure top view of another known light emitting diode. It is the sectional view on the AB line of FIG. 1 is a structural plan view of a preferred embodiment of the present invention. FIG. 6 is a sectional view taken along line CD in FIG. 5. FIG. 3 is a structural plan view of a preferred embodiment of the present invention and a power supply substrate. It is a structure top view after the combination of the light emitting diode die | dye of this invention. It is the EF sectional view taken on the line of FIG. It is an exploded view of another Example of this invention. It is a combination display figure of FIG. It is a structure top view of the light emitting diode die | dye of another Example of this invention. It is sectional drawing of the Example of FIG. It is a structure top view of the electric power supply board | substrate of the Example of FIG. It is a structure top view after the combination of the Example shown by FIG.12 and FIG.13. FIG. 16 is a cross-sectional display view after the combination of the embodiment shown in FIG. 15.

Explanation of symbols

11 die substrate 13 first epitaxial layer 15 second epitaxial layer 153 first surface 155 second surface 17 first electrode 19 second electrode 171 first bonding pad 191 second bonding pad 20 light emitting diode 21 die substrate 23 first epitaxial layer 25 second epitaxial layer 253 first surface 255 second surface 271 first electrode 273 first communication electrode 291 second electrode 293 second communication electrode 30 light emitting diode die 31 die substrate 33 first epitaxial layer 331 first electrode 35 second Epitaxial layer 351 Second electrode 353 First surface 355 Second surface 37 Electrode insulating layer 41 Power supply substrate 43 First communication circuit 431 First power supply circuit 45 Second communication circuit 451 Second power supply circuit 47 Bonding layer 51 Power supply Substrate 53 First communication circuit 531 First power supply circuit 55 Second communication circuit 551 Second power supply circuit 57 Electrostatic discharge protection device 60 Light emitting diode chip 61 Die substrate 63 First epitaxial layer 631 First electrode 65 Second epitaxial layer 651 Second electrode 653 First Surface 655 Second surface 67 Electrode insulating layer 71 Power supply substrate 73 First communication circuit 731 First power supply circuit 735 First bonding pad 75 Second communication circuit 755 Second bonding pad 751 Second power supply circuit

Claims (13)

Comprising at least one light emitting diode die and a power supply substrate;
Each light emitting diode die includes a die substrate, the die substrate being provided with a second epitaxial layer, wherein the second epitaxial layer is defined with at least one first surface and at least one second surface, and further on the first surface. A first epitaxial layer is formed, a light emitting action region is formed between the first epitaxial layer and the second epitaxial layer, at least one first electrode is provided on a partial surface of the first epitaxial layer, 2 at least one second electrode is provided on a partial surface of the epitaxial layer;
The power supply board is provided with at least one first power supply circuit and at least one second power supply circuit at positions corresponding to the first electrode and the second electrode on the surface thereof, and each first power supply is provided. The circuit is electrically connected by the first communication circuit, each second power supply circuit is electrically connected by the second communication circuit, and the first power supply circuit and the corresponding first electrode are electrically connected to each other And a second power supply circuit and a second electrode corresponding to the second power supply circuit are electrically connected to each other.   The light emitting device capable of increasing the light emitting action area according to claim 1, wherein the power supply substrate is a surface insulating substrate. 3. The light emitting device capable of increasing the light emitting action area according to claim 2, wherein the power supply substrate is silicon nitride (Si ₃ N ₄ ), aluminum nitride (AlN), silicon carbide (SiC), gallium nitride (GaN) and the like. A light-emitting device capable of increasing the area of a light-emitting action region, characterized by being formed by any combination.   The light emitting device capable of increasing the area of the light emitting action region according to claim 1, wherein a flip chip package method is adopted for the light emitting diode die, and the light emitting diode die is reversed and bonded to the power supply substrate. A light emitting device capable of increasing the area of the light emitting region.   2. The light emitting device according to claim 1, further comprising an electrostatic discharge protection device fixed to the power supply board and electrically connected to the first communication circuit and the second power supply circuit. A light-emitting device capable of increasing the area of the light-emitting action region.   6. The light emitting device capable of increasing the light emitting action area according to claim 5, wherein the electrostatic discharge protection device is either a Zener diode or a Schottky barrier diode. apparatus.   2. The light emitting device according to claim 1, further comprising an electrostatic discharge protection device fixed to the power supply board and electrically connected to the second communication circuit and the first power supply circuit. A light-emitting device capable of increasing the area of the light-emitting action region.   2. The light emitting device according to claim 1, wherein the die substrate is formed of any one of silicon carbide, gallium arsenide, sapphire, gallium nitride, and a combination thereof. A light emitting device capable of increasing the area of a region.   2. The light emitting device according to claim 1, wherein the plurality of second electrodes are arranged in any one of a linear array, a circular array, a cross array, and a combination thereof. A light-emitting device capable of increasing the active area.   2. The light-emitting device capable of increasing the light-emitting action area according to claim 1, wherein an electrode insulating layer is provided on a side of the plurality of second electrodes.   2. The light-emitting device capable of increasing the area of the light-emitting region according to claim 1, wherein the second surface of the second epitaxial layer is lower than the first surface.   2. The light emitting device according to claim 1, wherein at least one first bonding pad is provided in the first communication circuit, and at least one second bonding pad is provided in the second communication circuit. A light emitting device capable of increasing the area of the light emitting action region. 2. The light emitting device capable of increasing the area of the light emitting action region according to claim 1, wherein a bonding layer is provided between the first electrode and the first power supply circuit and between the second electrode and the second power supply circuit. A light emitting device capable of increasing the area of the light emitting action region.

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