CN100363532C - Vacuum evaporation plating machine - Google Patents
Vacuum evaporation plating machine Download PDFInfo
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- CN100363532C CN100363532C CNB2005100063980A CN200510006398A CN100363532C CN 100363532 C CN100363532 C CN 100363532C CN B2005100063980 A CNB2005100063980 A CN B2005100063980A CN 200510006398 A CN200510006398 A CN 200510006398A CN 100363532 C CN100363532 C CN 100363532C
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- deposition material
- plate width
- communicating pores
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
Abstract
Vapor deposition on a glass substrate 12 in the substrate width direction L is unified by providing a spool shutter 21 to uniformly control the quantity of the vapor of a vapor deposition material 15 flowing into the glass substrate 12 side from an evaporation chamber 18 side in the substrate width direction L of the glass substrate 12 and a perforated plate shutter 23 disposed on a lower side of the glass substrate 12 parallel to a surface to be vapor-deposited of the glass substrate 12 to rectify the in-plane distribution and the flow of the vapor of the vapor deposition material 15 in a vapor deposition chamber 25a in the vacuum vapor deposition machine. Thus, the a vacuum vapor deposition machine is capable of forming a uniform vapor flow of a vapor deposition material even in a large substrate, controlling the vapor distribution and unifying the vapor deposition.
Description
Technical field
The present invention relates to substrate etc. by evaporation body evaporation deposition material and film forming vacuum evaporation plating machine.
Background technology
So-called vacuum evaporation plating machine is meant, configuration deposition material and in vacuum vessel by the evaporation body, with state to reducing pressure in the vacuum vessel, thereby heating and fusion deposition material make its evaporation or distillation make its gasification, and the deposition material of gasification is deposited in by the evaporation surface and film forming device.In above-mentioned vacuum evaporation plating machine, as the heating means of deposition material, the useful external heater that is adopting heats the indirect heating crucible method of the crucible of having put into deposition material etc.In recent years, the use of vacuum evaporation plating machine does not only limit to the formation by the metallic film of metal evaporation, and the organic thin film that also is used in by organic matter vaporization plating forms or forms by the macromolecule membrane that multiple organic common evaporation carries out.For example, be used in the formation etc. of the organic electroluminescent device (hereinafter referred to as organic EL) of flat-panel monitor (being designated hereinafter simply as FPD).
[patent documentation 1] spy opens flat 10-152777 communique
In recent years, along with popularizing of FPD, the more and more large-scale change of FPD substrate.And when FPD is maximized, be difficult to the deposition material that has gasified is formed uniform concentration distribution and mobile, be difficult in and carry out even evaporation on the FPD substrate, cause easily problems such as inhomogeneous to occur.For example, for the organic system deposition material, consider the easiness of control, adopt above-mentioned indirect heating crucible method more, and by the temperature of control deposition material or the switching amount that control is arranged on the valve (Shutter) between deposition material and the substrate etc., control is from the vapor volume of deposition material.Thereby in aforesaid method, promptly enable to control whole vapor volume, also be difficult to the vapor volume of the width of large-scale relatively FPD substrate is controlled, and then be difficult to obtain uniform film by evaporation.
Summary of the invention
The present invention is in view of the above fact, and is a kind of when also can control the vapor distribution of deposition material to large substrate even its purpose is to provide, and can also form evenly and flow, thereby can be obtained the vacuum evaporation plating machine of uniform thin film by evaporation.
For addressing the above problem, the invention provides following vacuum evaporation plating machine.That is, a kind of vacuum evaporation plating machine comprises following each several part: be arranged in the vacuum vessel and transport the conveyer of substrate; Be arranged on the following side of described substrate, and have at least following length promptly as with the plate width of the vertical direction of carriage direction of described substrate by the deposited chamber of the length in evaporation zone; Be arranged on the lower side of described vacuum vessel, produce the evaporator room of the steam of described deposition material by gasification or distillation deposition material; At least have following length and be described substrate described plate width by the length in evaporation zone, the vapor volume controlling organization to controlling simultaneously along the vapor volume from the described deposition material of described evaporator room of the described plate width of described substrate; The heating arrangements that the wall of the vacuum vessel from described evaporator room to described deposited chamber is heated, wherein, described vapor volume controlling organization comprises following each several part again: on the described plate width of described substrate, possess the block part of a plurality of ingates and a plurality of outlet openings corresponding with it; Be entrenched in the described block part in rotating mode, and a plurality of cylindrical shaft parts be set in the described plate width arrangement of described substrate; Be arranged on each described spindle unit, and be communicated with the communicating aperture of a described ingate and a described outlet opening corresponding with it.
That is, described vapor volume controlling organization makes each spindle unit independent rotation with the vapor volume from the deposition material of evaporator room side inflow in the equally distributed mode of plate width of substrate, thereby adjusts the vapor volume of plate width independently.
For addressing the above problem, the present invention also provides following vacuum evaporation plating machine.That is, a kind of vacuum evaporation plating machine comprises following each several part: be arranged in the vacuum vessel and transport the conveyer of substrate; Be arranged on the following side of described substrate, and have at least following length promptly as with the plate width of the vertical direction of carriage direction of described substrate by the deposited chamber of the length in evaporation zone; Be arranged on the lower side of described vacuum vessel, produce the evaporator room of the steam of described deposition material by gasification or distillation deposition material; At least have following length and be described substrate described plate width by the length in evaporation zone, while side below described substrate, dispose in the mode that is parallel to described substrate, and adjust the distribution and the mobile steam rectification mechanism of the steam of the described deposition material in the described deposited chamber by evaporation face surface; To the heating arrangements that the wall of the vacuum vessel from described evaporator room to described deposited chamber heats, wherein, described steam rectification mechanism comprises following each several part again: the retaining plate that possesses a plurality of first communicating poress; On the plane of described retaining plate, so that movable mode disposes on the described plate width of described substrate, possess a plurality of movable platens of the port area controlling organization of the port area of controlling described a plurality of first communicating poress.
That is, described steam rectification mechanism, in the deposited chamber of side below substrate, in the steam of the deposition material in the deposited chamber mode uniformly that in face, distributes and flow all, independent each movable platen that moves, the distribution of control deposition material steam and flowing.
For addressing the above problem, the present invention provides following vacuum evaporation plating machine again.That is, a kind of vacuum evaporation plating machine comprises following each several part: be arranged in the vacuum vessel and transport the conveyer of substrate; Be arranged on the lower side of described substrate, and have at least following length promptly as with the plate width of the vertical direction of carriage direction of described substrate by the deposited chamber of the length in evaporation zone; Be arranged on the lower side of described vacuum vessel, produce the evaporator room of the steam of described deposition material by gasification or distillation deposition material; At least have following length and be described substrate described plate width by the length in evaporation zone, the vapor volume controlling organization to controlling simultaneously along the vapor volume from the described deposition material of described evaporator room of the described plate width of described substrate; At least have following length and be described substrate described plate width by the length in evaporation zone the time, in side below the described substrate of the upper side of described vapor volume controlling organization, dispose in the mode that is parallel to described substrate, and adjust the distribution and the mobile steam rectification mechanism of the steam of the described deposition material in the described deposited chamber by evaporation face surface; The heating arrangements that the wall of the vacuum vessel from described evaporator room to described deposited chamber is heated, wherein, described vapor volume controlling organization comprises following each several part again: on the described plate width of described substrate, possess the block part of a plurality of ingates and a plurality of outlet openings corresponding with it; Be entrenched in the described block part in rotating mode, and a plurality of cylindrical shaft parts be set in the described plate width arrangement of described substrate; Be arranged on each described spindle unit, and be communicated with the communicating aperture of a described ingate and a described outlet opening corresponding with it, in addition wherein, described steam rectification mechanism comprises following each several part again: the retaining plate that possesses a plurality of first communicating poress; On the plane of described retaining plate, so that movable mode disposes on the described plate width of described substrate, possess a plurality of movable platens of the port area controlling organization of the port area of controlling described a plurality of first communicating poress.
For addressing the above problem, the present invention provides following vacuum evaporation plating machine again.That is, described vacuum evaporation plating machine is characterized in that, described vapor volume controlling organization is at the inside or the outside rotating mechanism with the described spindle unit of rotation of described spindle unit.
As rotating mechanism, for example in the inside or the prominent parts of establishing such as outer setting gear or handle of spindle unit, and prominently establish portion by rotate this by the rotational motion of rotation axis etc., make spindle unit rotation itself.
For addressing the above problem, the present invention provides following vacuum evaporation plating machine again.That is, described vacuum evaporation plating machine is characterized in that, in described steam rectification mechanism, with a plurality of second communicating poress as described port area controlling organization; When disposing described first communicating pores and described second communicating pores with predetermined distance, the openings of sizes of described first communicating pores and described second communicating pores, with the vertical direction of the travel direction of described movable platen on identical.
As the openings of sizes of described communicating pores with the identical form of the vertical direction of the travel direction of movable platen, be fit to use the orthogonal communicating pores.
For addressing the above problem, the present invention provides following vacuum evaporation plating machine again.That is, described vacuum evaporation plating machine is characterized in that, in described steam rectification mechanism, with a plurality of second communicating poress as described port area controlling organization; When disposing described first communicating pores and described second communicating pores with predetermined distance, the openings of sizes of described first communicating pores and described second communicating pores, with the vertical direction of the travel direction of described movable platen on inequality.
As the openings of sizes of described communicating pores with the vertical direction of the travel direction of movable platen form inequality, be fit to use circular, oval-shaped communicating pores.
For addressing the above problem, the present invention provides following vacuum evaporation plating machine again.That is, described vacuum evaporation plating machine is characterized in that, in described steam rectification mechanism, and will be with a plurality of otch of predetermined distance configuration as described port area controlling organization.
For addressing the above problem, the present invention provides following vacuum evaporation plating machine again.That is, described vacuum evaporation plating machine is characterized in that, in described steam rectification mechanism, so that the equally distributed mode of steam of the described deposition material in the described deposited chamber is provided with described predetermined distance.
For example, if the steam of the deposition material of the lower side of steam rectification mechanism (evaporator room side) is at the plate width uniform distribution of substrate, then preferably with impartial arranged spaced communicating pores, and be distributed with under the situation about laying particular stress on, can laying particular stress on the interval of suitable change configuration communicating pores according to this.
According to the present invention, can therefore can distribute and control at the vapor volume of the plate width of glass substrate control deposition material or to its mechanism of flowing and carrying out rectification owing to have to the evaporation of plate width, make evaporation become even.
Description of drawings
Fig. 1 is the approximate vertical view that the in-line film deposition system of vacuum evaporation plating machine of the present invention has been used in expression.
Fig. 2 is the sketch chart of an example of the structure of a plurality of vacuum evaporation plating machines of the present invention of expression configuration.
Fig. 3 is the sketch chart of an example of the internal structure of expression vacuum evaporation plating machine of the present invention.
Fig. 4 is the figure of an example of the expression valve member that constitutes vacuum evaporation plating machine of the present invention.
Fig. 5 is the figure of another example of the expression valve member that constitutes vacuum evaporation plating machine of the present invention.
Fig. 6 is the figure of an example of the expression perforated baffle that constitutes vacuum evaporation plating machine of the present invention.
Fig. 7 is the figure that is used to illustrate the inflation method of the perforated baffle that constitutes vacuum evaporation plating machine of the present invention.
Fig. 8 is the figure of another example of the expression perforated baffle that constitutes vacuum evaporation plating machine of the present invention.
Among the figure: 3a, 3b, 3c-filming chamber, 11-transveyer, 12-glass substrate, the 13-well heater, 14a, 14b, the 14c-chamber, 15,16, the 17-deposition material, 18,19, the 20-evaporator room, 21,21A, the 21B-valve member, 23-perforated baffle, 24-porous cowling panel, 25a, 25b, the 25c-deposited chamber, the 26-intermediate chamber, 31,41-stopper parts, 32, the 42-spindle unit, 33, the 43-ingate, 34, the 44-outlet opening, 35, the 45-communicating aperture, 61,73-is porous plate fixedly, 63a, 63b, 63c, 71a, 75a, the movable porous plate of 79a-, 64, the 74-communicating pores, 65a, 65b, 65c, 76a, the 80a-communicating pores, the 72a-otch.
Embodiment
In the present invention, by the vapor volume for the deposition material that flows into from the evaporator room side towards substrate-side is set on vacuum evaporation plating machine, at the even vapor volume controlling organization (valve member of controlling of the plate width of substrate, Spool Shutter), and side disposes in the mode by the evaporation face that is parallel to substrate below substrate, and the steam of the deposition material in the deposited chamber is carried out distributing in the face and the steam rectification mechanism (perforated baffle) of mobile adjustment, thereby, seek to carry out the evaporation homogenizing in the distribution of the deposition material steam of the plate width of substrate and flow.
(embodiment 1)
Fig. 1 is the approximate vertical view that the in-line film deposition system of a plurality of vacuum evaporation plating machines of the present invention has been used in expression.
Below, as an example of embodiment, the formation of the organic EL of FPD is described as an example, but vacuum evaporation plating machine of the present invention is not limited in this, promptly can be applied in the formation of other films of other substrates.In addition, the present invention can be applicable to large substrate well.
In-line film deposition system shown in Figure 1, be for can be to form the organic EL of FPD and constitute along the row mode, and each treatment chamber all is provided with door (a gate door) 1, and carries out operation according to each purpose under with vacuum condition inequality at each treatment chamber.
Specifically, the left side of glass substrate from Fig. 1 that becomes FPD transported by the not shown roller that transports, and by door 1, is transported to mask attaching chamber 2.In mask attaching chamber 2, when the mask that is used to form the pattern of organic EL ships and be installed on the glass substrate from mask holder 2a, use not shown vacuum pump to be decompressed to vacuum from normal atmosphere.
Reach after the specified vacuum degree, the glass substrate that mask is installed is transported to the 3a of filming chamber, 3b, 3c successively.In the 3a of these filming chamber, 3b, 3c, use vacuum evaporation plating machine of the present invention described later, and in in-line film deposition system shown in Figure 1, adopt the structure of be connected in series three 3a of filming chamber, 3b, 3c, so that form the luminescent layer of organic EL.In addition, about the quantity and the structure of filming chamber, the lamination number of the film that can form as required or its purpose constitute its order or number and film forming film self appropriate combination.
Carry out film forming in the 3a of filming chamber, 3b, 3c after, glass substrate just is transported to mask stripping cell 4.In mask stripping cell 4, break away from the mask that in the 3a of filming chamber, 3b, 3c, uses, the new mask that will use in ensuing treatment chamber (Al (aluminium) sputtering chamber 6), 4a transports and installs from the mask holder.In addition, the mask that breaks away from mask stripping cell 4 by purifications such as O2 plasmas, after this is transported among the mask holder 5a in mask decontamination chamber 5 again.
The glass substrate that new mask is installed is transported in the Al sputtering chamber 6, and forms the metallic film of the distribution of the luminescent layer that will become organic EL in this Al sputtering chamber 6.After this be transported to mask and remove chamber 7, and break away from mask there, when again the mask that breaks away from being transported to mask holder 7a, glass substrate is transported to sealing chamber 8.In sealing chamber 8, use the sealing material of selfsealings material supply chamber 8a, sealing is by becoming film formed organic EL.After sealing, glass substrate is transported from sealing chamber 8.
Fig. 2 is the sketch chart of an embodiment of structure of the 3a of filming chamber, 3b, the 3c of presentation graphs 1.Here, the 3a of each filming chamber, 3b, 3c are by utilizing vacuum evaporation plating machine of the present invention to constitute.In addition, the 3a of filming chamber, 3b, 3c are the vacuum evaporation plating machines that adopts a deposition material inequality respectively.In addition, Fig. 3 represents the internal structure of the 3a of filming chamber.
As shown in Figure 2, transveyer 11 (conveyer) has the structure that the direction that is transported at glass substrate 12 makes up a plurality of driving roll 11a and movable roll 11b, and is located in the not shown upper chamber (vacuum vessel).Carry out film forming when handling in the 3a of filming chamber, 3b, 3c, transveyer 11 moves glass substrate 12 with certain fixing speed, makes to be become even by the thickness of film forming film along the carriage direction of glass substrate 12.And driving roll 11a and movable roll 11b are configured in the two ends of glass substrate 12, support glass substrate 12 in the mode of the one-tenth membrane portions that do not contact glass substrate 12.
The thickness of the thickness of the carriage direction of the film of glass substrate 12 and homogeneity, be to be adjusted into prescribed condition by the translational speed of adjusting based on transveyer 11, but along with glass substrate 12 maximization that becomes, with the vertical direction of the carriage direction of glass substrate 12 (hereinafter referred to as plate width L.Plate width L is with reference to Fig. 3.) thickness be the homogeneity of evaporated film of the glass substrate 12 of plate width L, will become problem adopting under the situation of vacuum evaporation plating machine in the past.In the present invention, be the homogeneity of the evaporated film that improves plate width L, use the vapor volume controlling organization of Fig. 4 to Fig. 8 described later or steam rectification mechanism etc., and adopt the structure of Fig. 2, Fig. 3, constituted vacuum evaporation plating machine of the present invention.
As shown in Figure 2, the 3a of filming chamber has the chamber 14a (vacuum vessel) that the wall from evaporator room 18 to deposited chamber 25a is heated by a plurality of well heaters 13 (heating arrangements).Chamber 14a is called as so-called hot wall chamber, and have in the deposition material 15 that gasified the process in the way that arrives glass substrate 12 not can evaporation to the structure of wall etc., and use not shown a plurality of temperature sensors, temperature is controlled at the temperature of the evaporation that does not cause deposition material 15.Under the situation of using such hot wall chamber, when can improve the utilising efficiency of deposition material steam, improve film forming speed.The deposited chamber 25a of chamber 14a that is located at the following side of glass substrate 12 is a deposited chamber long on the plate width L of glass substrate 12 direction, and have at least following length be glass substrate 12 plate width L by the length in evaporation zone.
In addition, shown in Fig. 2,3, dispose following each several part from the lower side of chamber 14a successively towards glass substrate 12 sides: have deposition material 15, and produce the evaporator room 18 (so-called crucible part) of the steam of deposition material 15 by gasification or distillation deposition material 15; For controlling, make it at the equally distributed valve member 21 of the plate width L of glass substrate 12 (vapor volume controlling organization) from evaporator room 18 and towards the vapor volume of the deposition material 15 of glass substrate 12 sides; Constitute by retaining plate with a plurality of communicating poress and movable platen, and adjust and to distribute and to flow in the face of steam of the deposition material 15 in the deposited chamber 25a and make its uniform perforated baffle 23 (steam rectification mechanism); Have a plurality of communicating poress littler, further adjust interior the distribution and mobile porous cowling panel 24 of face of the steam of deposition material 15 than described communicating pores.
The steam of deposition material 15 is through valve member 21, perforated baffle 23 and porous cowling panel 24 and after the uniform distribution, evaporation is on glass substrate 12 in deposited chamber 25a.25a is the same with deposited chamber, these component parts on the plate width L of glass substrate 12, also have at least with glass substrate 12 by the length of the equal in length of the plate width in evaporation zone.But in the present invention, because valve member 21 described later and perforated baffle 23 have the inhomogeneity function of evaporation that can be controlled at plate width L, so also equal length not necessarily of the length of the plate width L of deposited chamber 18.
In the present embodiment, chamber 14a, 14b, 14c have same structure, and use different deposition material 15,16,17 according to film forming film.These chambers 14a, 14b, 14c are independent respectively, and by not shown vacuum pump, suitably control vacuum tightness.For example, can use cryogenic pump to meet the requirements of vacuum tightness.
(embodiment 2)
Valve member 21 is used for supplying with at the plate width L of glass substrate 12 and is uniform vapor volume (concentration distribution), as long as and can realize identical function, then do not limit the configuration and the direction of the stream that steam passes through especially.Specifically, valve member 21 has following structure, promptly, in order on the plate width L of glass substrate direction, evenly to supply with the vapor volume of deposition material, with respect to the deposited chamber of growing in the direction of plate width L, direction at plate width L is provided with a plurality of streams, and can distinguish the vapor volume of independent control by these streams.Below with reference to Fig. 4, describe the mechanism and the action of valve member 21 in detail with above structure.In addition, Fig. 5 is the sketch chart of another embodiment of expression valve member 21.
Fig. 4 (a) is the stereographic map that expression constitutes the valve member of vacuum evaporation plating machine of the present invention; Fig. 4 (b), (c) are that the A-A alignment of Fig. 4 (a) is looked sectional drawing, and the running-active status of expression valve member.
As shown in Figure 4, valve member 21 possess at least plate width L with glass substrate 12 by the stopper parts 31 of the rectangular shape of evaporation zone length, be arranged on columniform space segment on the length direction of inside of stopper parts 31, be entrenched in columned a plurality of spindle units 32 of this columned space segment in rotating mode.Promptly in other words, with divided a plurality of cylinders (spindle unit 32) in the space segment cylindraceous of the inside of block part 31 the vertical permutation and combination of direction along plate width L.In the stopper parts 31, be formed with ingate 33 and outlet opening 34 in relative position, and these a plurality of ingates 33 and outlet opening 34 form in the direction of plate width L.In addition, be provided with the ingate 33 for correspondence position, the communicating aperture 35 that outlet opening 34 is communicated with in the inside of spindle unit 32, and when being disposed at prescribed position, for example shown in Fig. 4 (b), ingate 33, outlet opening 34 and the communicating aperture 35 of correspondence position can be communicated with, maximum vapor volume flows.
When desire is adjusted vapor volume, shown in Fig. 4 (c),, adjust position with respect to the communicating aperture 35 of ingate 33, outlet opening 34 by rotating shaft members 32 self, reduce the port area of communicating aperture 35, adjust vapor volume.At this moment, by the prominent portion 37 that establishes to the volume inside portion 36 that is formed at spindle unit 32, the shortcoming portion of the discoid key parts 39 that chimeric (rotating mechanism) driven shaft 38 connects, thus carry out the rotation of spindle unit 32.Thus, the position of the depth of penetration by adjusting the key parts 39 in the spatial portion 36, can adjust independently respectively the spindle unit 32 that desire changes the turned position, like this, by each spindle unit is adjusted to suitable turned position, the uniform vapor volume that can be implemented in plate width L is supplied with.In addition, because the communicating aperture 35 of spindle unit 32 has columned spatial portion 36 in the inside of spindle unit 32, therefore can form stream in mode circuitous in this spatial portion 36.In addition, can use above-mentioned key parts 39 to adjust spindle unit 32, also can carry out the rotation control and the on position control of drive shaft 38, thereby realize control automatically by driving mechanisms such as engines with manual mode.
Here, control mainly is to be undertaken by the port area that changes communicating aperture 35 based on the vapor volume of valve member 21A, and in fact the vapor volume by valve member 21A also by other physical element for example the pressure difference between the pressure of the pressure of evaporator room 18 and intermediate chamber 26 influenced.Yet in vacuum evaporation plating machine of the present invention, not shown vacuumometer is arranged in each chamber (evaporator room, intermediate chamber, deposited chamber etc.), and under the prerequisite of the pressure difference of considering evaporator room 18 and intermediate chamber 26, has determined the port area of communicating aperture 35.This also is the same in valve member 21B described later.And, under the situation of perforated baffle 23 described later, under the prerequisite of the pressure difference of a chamber 26 also under consideration and evaporator room 25a, determined the port area of communicating pores.
(embodiment 3)
Fig. 5 (a) is the stereographic map of another embodiment of the expression valve member that constitutes vacuum evaporation plating machine of the present invention; Fig. 5 (b), (c) are that the B-B alignment of Fig. 5 (a) is looked sectional drawing, and the running-active status of expression valve member.
As shown in Figure 5, valve member 21B possess at least plate width L with glass substrate 12 by the stopper parts 41 of the rectangular shape of evaporation zone length, be arranged on columniform space segment on the length direction of inside of stopper parts 41, be entrenched in columned a plurality of spindle units 42 of this columned space segment.In the stopper parts 41, be formed with ingate 43 and outlet opening 44 in relative position, and when the communicating aperture 45 that is formed at spindle unit is disposed at prescribed position, for example shown in Fig. 5 (b), communicating aperture 45, ingate 44 and outlet opening 44 can be communicated with fully, maximum vapor volume flows.When desire is adjusted vapor volume, shown in Fig. 5 (c),, adjust position with respect to the communicating aperture 45 of ingate 43, outlet opening 44 by rotating shaft members 42, reduce the port area of communicating aperture 45, adjust vapor volume.
Be formed at the handle 47 of the cylinder outside of spindle unit 42 by use, promptly adjust this handle 47 from the outside, carry out the rotation (rotating mechanism) of spindle unit 42 via the hole 46 that is formed at block part 41.When adjusting the turned position of other spindle units 42, use the handle 47 of other spindle units 42, the turned position of each spindle unit 42 is independently adjusted.In the present invention, owing to being to use handle 47 to adjust the turned position, so the communicating aperture 45 of spindle unit 42 can be the straight line stream, thereby compares with the communicating aperture 35 of the spindle unit 32 of embodiment 2, and is easier in the manufacturing.
(embodiment 4)
Perforated baffle 23 with have a plurality of littler communicating poress porous cowling panel 24 together, side disposes in the mode by the evaporation face that is parallel to glass substrate 12 below glass substrate 12, and with porous cowling panel 24 1 coexist say so in more detail in the deposited chamber the glass substrate 12 that in deposited chamber, exposes by the evaporation zone comprehensively on, to the deposition material vapor volume adjustment it is distributed in face and face in flow evenly, thereby on glass substrate 12, form uniform evaporated film.Below with reference to Fig. 6, Fig. 7, describe the structure and the action thereof of above-mentioned porous stopper 23 in detail.In addition, Fig. 8 is the sketch chart of another embodiment of expression perforated baffle 23.
Shown in Fig. 6 (a) and (b), the perforated baffle 23 among the present invention possesses movable porous plate 63a, 63b, the 63c (port area controlling organization) that can be moved horizontally by using shank 62a, 62b, 62c (port area controlling organization) by the fixedly porous plate 61 of evaporation zone length and a plurality of (being three among Fig. 6) of plate width L with glass substrate 12 at least on the plane of fixing porous plate 61.In other words, movable porous plate 63a, 63b, 63c, the same plane with on the fixing porous plate 61 in mutual different zone, disposes in the mode that can move horizontally in the direction of plate width L.
Fixedly be provided with circular or oval-shaped a plurality of communicating pores 64 (first communicating pores) in the porous plate 61, and on the position corresponding of movable porous plate 63a, 63b, 63c, similarly form circular or oval-shaped communicating pores 65a, 65b, 65c with these communicating poress 64.For example, that communicating pores 64 and communicating pores 65a, 65b, 65c can have is identical shaped, same size, same intervals, and in this case, communicating pores 65a, 65b, 65c can not block communicating pores 64 and obtain maximum open area by steam when being in prescribed position, and can be by moving from this prescribed position, make communicating pores 65a, 65b, 65c block the part of communicating pores 64, thereby make it be in the state (with reference to Fig. 6 (c)) of adjusting port area.
In addition, because above-mentioned perforated baffle 23 disposes a plurality of movable porous plate 63a, 63b, 63c on the plane of fixing porous plate 61, therefore can be by independent each movable porous plate 63a, 63b, the 63c of moving, to by movable porous plate 63a, communicating pores 65a, the 65b of 63b, 63c, the vapor volume of 65c, independently control with each movable porous plate 63a, 63b, 63c.Under the situation that adopts perforated baffle 23 as shown in Figure 6, because plate width L with respect to glass substrate 12, possess movable porous plate 63b that is positioned at the central part position and movable porous plate 63a, the 63c that is positioned at periphery, therefore can carry out rectification to the central part of the glass substrate 12 of the film thickness difference that is easy to generate film especially and the vapor volume on the periphery and make its equalization, and then make thickness become even at the film of plate width L.In addition, consider the easness that supports movable porous plate 63a, 63b, 63c, preferably movable porous plate 63a, 63b, 63c are configured in fixedly on the porous plate 61, but and differ and be defined in this configuration of employing.And the quantity of communicating pores 64,65a, 65b, 65c, size, allocation position etc. can be determined by vapor volume as required.
(embodiment 5)
The figure of the position relation of each movable porous plate 63a that Fig. 7 (a) and (b) are the communicating pores 65a, the 65b that are illustrated in movable porous plate 63a, 63b, 63c, 65c when uniformly-spaced disposing, communicating pores 65a, the 65b of 63b, 63c, 65c.
Shown in Fig. 7 (a), at communicating pores 65a, 65b, 65c with W uniformly-spaced
1Under the situation of configuration, when with movable porous plate 63a, 63b, when 63c is disposed at prescribed position, movable porous plate 63a, 63b, adjacent communicating pores 65a, the 65b of 63c, 65c interval each other also become same intervals W
1And shown in Fig. 7 (b), when mobile movable porous plate 63a, 63b, 63c, movable porous plate 63a, 63b, only adjacent communicating pores 65a, the 65b of 63c, 65c interval variation each other are interval W
2, W
3At this moment, based on the position of movable porous plate 63a, 63b, 63c, the communicating pores of not shown fixedly porous plate 64 is blocked and change port area, and then the vapor volume that passes through is changed.
(embodiment 6)
Fig. 7 (c), (d) are the figure of position relation of communicating pores 67a, 67b, the 67c of the communicating pores 67a, the 67b that are illustrated in movable porous plate 66a, 66b, 66c, each the movable porous plate 66a when 67c disposes with non-uniform distantance, 66b, 66c.
Shown in Fig. 7 (c), communicating pores 67a is being set to W to each other
4, communicating pores 67b is set to W to each other
6, communicating pores 67c is set to W to each other
8Situation under, when with movable porous plate 66a, 66b, when 66c is disposed at prescribed position, movable porous plate 66a, 66b, adjacent communicating pores 67a, the 67b of 66c, 67c interval each other specifically are the W at interval that is spaced apart between communicating pores 67a and the communicating pores 67b
5, be spaced apart W at interval between communicating pores 67b and the communicating pores 67c
7And shown in Fig. 7 (d), when mobile movable porous plate 66a, 66b, 66c, movable porous plate 66a, 66b, only adjacent communicating pores 67a, the 67b of 66c, 67c interval variation each other are interval W
9, W
10At this moment, based on the position of movable porous plate 66a, 66b, 66c, the communicating pores of not shown fixedly porous plate 64 is blocked and change port area, and then the vapor volume that passes through is changed.When the part that has the easy excess supply of vapor volume or there is the part of the easy undersupply of vapor volume on the contrary, then shown in Fig. 7 (c), (d), can be by becoming big or the communicating pores density that diminishes, promptly increase or dwindle communicating pores at interval, the control vapor volume distributes.
(embodiment 7)
In Fig. 6, perforated baffle 23 shown in Figure 7, the shape of communicating pores has adopted circular or oval, and communicating pores can also adopt other different shapes, even can be used in combination various communicating poress, constitutes perforated baffle 23.Promptly only otherwise exceed under the prerequisite of aim of the present invention, can adopt various combinations.Fig. 8 has represented some such examples.
Fig. 8 (a) has represented an other example of perforated baffle.Wherein fixedly porous plate 61 with described identical, and communicating pores 64 with a plurality of circles.Movably the movable porous plate 71a (port area controlling organization) of configuration is a comb form on fixing porous plate 61, and otch 72a with the U font that disposes with predetermined distance, and, change the port area of communicating pores 64 by mobile movable porous plate 71a, and then adjust the vapor volume that passes through.
(embodiment 8)
In addition, Fig. 8 (b) has represented an other example of perforated baffle.Wherein, fixing porous plate 73 and movably be configured in movable porous plate 75a (port area controlling organization) on the fixing porous plate 73, possess a plurality of have same size, the communicating pores 74 of identical rectangular shape, 76a jointly, by movable porous plate 75a is moved, the port area of communicating pores 74 is changed, thereby adjust the vapor volume that passes through.Under the situation of the perforated baffle of present embodiment, fixedly porous plate 73, movable porous plate 75a possess a plurality of have same size, the communicating pores 74 of identical rectangular shape, 76a jointly, and the openings of sizes of communicating pores with the vertical direction of the travel direction of movable porous plate on identical, therefore when moving movable porous plate 75a, can change port area with the linear scaling of its amount of movement, and then the vapor volume that passes through with the linearity change according to this variations.On the contrary when adopting Fig. 6, circular or oval-shaped communicating pores shown in Figure 7, since the openings of sizes of communicating pores with the vertical direction of the travel direction of movable porous plate on inequality, therefore just the amount of movement when mobile non-linearly changes port area with movable porous plate 63a etc., and according to this variation and the vapor volume that change is non-linearly passed through.
(embodiment 9)
In addition, Fig. 8 (c) has represented an other example of perforated baffle.Wherein, the fixedly porous plate 73 of present embodiment and the same communicating pores 74 when the embodiment 8 with a plurality of rectangular shapes, but on fixing porous plate 73 movably the movable porous plate 79a (port area controlling organization) of configuration have the communicating pores 80a of a plurality of special shapes.This communicating pores 80a is the hole that the communicating pores with two rectangular shapes that vary in size fuses with trapezoidal communicating pores, and is called for example lath shape.Under the situation of the perforated baffle that adopts present embodiment, because fixedly porous plate 73 has orthogonal communicating pores 74 and the movable communicating pores 80a of porous plate 75a with lath shape, therefore under the situation of mobile movable platen 79a, when big with respect to the communicating pores 80a width of the vertical direction of travel direction, the mode that can follow moving of movable porous plate 79a and increase with linearity changes its port area, and when with respect to the communicating pores 80a width of the vertical direction of travel direction hour, can follow moving of movable porous plate 79a and change its port area in the mode that linearity reduces.Promptly, can be by adopting wide communicating pores width with respect to the part that amount of movement increases variable quantity to desiring, and the part of desiring variable quantity is reduced adopts narrow communicating pores width, thereby obtains the port area variation characteristic of expectation, and then changes the vapor volume that passes through by changing its port area.
As mentioned above, by adopting the combination of various communicating pores shapes, communicating pores, can control the vapor volume of span of control of variation characteristic, the expectation of expectation.
Claims (5)
1. a vacuum evaporation plating machine is characterized in that,
Comprise following each several part:
Be arranged in the vacuum vessel and transport the conveyer of substrate;
Be arranged on the following side of described substrate, and have at least with the vertical direction of the carriage direction of described substrate be the plate width by the deposited chamber of the length in evaporation zone;
Be arranged on the lower side of described vacuum vessel, produce the evaporator room of the steam of described deposition material by gasification or distillation deposition material;
At least have the described plate width of described substrate by the length in evaporation zone, while side below described substrate, dispose in the mode that is parallel to described substrate, and adjust the distribution and the mobile steam rectification mechanism of the steam of the described deposition material in the described deposited chamber by evaporation face surface;
The heating arrangements that the wall of the vacuum vessel from described evaporator room to described deposited chamber is heated,
Wherein, described steam rectification mechanism comprises following each several part again:
The retaining plate that possesses a plurality of first communicating poress;
On the plane of described retaining plate with described plate width at described substrate on movable mode dispose, possess a plurality of movable platens of port area controlling organization of the port area of described a plurality of first communicating poress of control simultaneously.
2. a vacuum evaporation plating machine is characterized in that,
Comprise following each several part:
Be arranged in the vacuum vessel and transport the conveyer of substrate;
Be arranged on the lower side of described substrate, and have at least with the vertical direction of the carriage direction of described substrate be the plate width by the deposited chamber of the length in evaporation zone;
Be arranged on the lower side of described vacuum vessel, produce the evaporator room of the steam of described deposition material by gasification or distillation deposition material;
At least have the described plate width of described substrate by the length in evaporation zone, the vapor volume controlling organization to controlling simultaneously along the vapor volume from the described deposition material of described evaporator room of the described plate width of described substrate;
At least have the described plate width of described substrate by the length in evaporation zone, simultaneously in side below the described substrate of the upper side of described vapor volume controlling organization, dispose in the mode that is parallel to described substrate, and adjust the distribution and the mobile steam rectification mechanism of the steam of the described deposition material in the described deposited chamber by evaporation face surface;
The heating arrangements that the wall of the vacuum vessel from described evaporator room to described deposited chamber is heated,
Wherein, described vapor volume controlling organization comprises following each several part again:
On the described plate width of described substrate, possesses the block part of a plurality of ingates and a plurality of outlet openings corresponding with it;
Be entrenched in the described block part in rotating mode, and a plurality of cylindrical shaft parts be set in the described plate width arrangement of described substrate;
Be arranged on each described spindle unit, and be communicated with the communicating aperture of a described ingate and a described outlet opening corresponding with it,
In addition, described steam rectification mechanism comprises following each several part again:
The retaining plate that possesses a plurality of first communicating poress;
On the plane of described retaining plate with described plate width at described substrate on movable mode dispose, possess a plurality of movable platens of port area controlling organization of the port area of described a plurality of first communicating poress of control simultaneously.
3. vacuum evaporation plating machine as claimed in claim 1 is characterized in that,
Described steam rectification mechanism, with a plurality of second communicating poress as described port area controlling organization; When disposing described first communicating pores and described second communicating pores with predetermined distance, the openings of sizes of described first communicating pores and described second communicating pores, with the vertical direction of the travel direction of described movable platen on identical.
4. vacuum evaporation plating machine as claimed in claim 1 is characterized in that,
Described steam rectification mechanism, with a plurality of second communicating poress as described port area controlling organization; When disposing described first communicating pores and described second communicating pores with predetermined distance, the openings of sizes of described first communicating pores and described second communicating pores, with the vertical direction of the travel direction of described movable platen on inequality.
5. vacuum evaporation plating machine as claimed in claim 1 is characterized in that,
Described steam rectification mechanism will be with a plurality of otch of predetermined distance configuration as described port area controlling organization.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP200420949 | 2004-01-29 | ||
| JP2004020949A JP4475967B2 (en) | 2004-01-29 | 2004-01-29 | Vacuum evaporation machine |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1648278A CN1648278A (en) | 2005-08-03 |
| CN100363532C true CN100363532C (en) | 2008-01-23 |
Family
ID=34879075
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2005100063980A Expired - Fee Related CN100363532C (en) | 2004-01-29 | 2005-01-28 | Vacuum evaporation plating machine |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP4475967B2 (en) |
| KR (1) | KR100635903B1 (en) |
| CN (1) | CN100363532C (en) |
| TW (1) | TWI281948B (en) |
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Also Published As
| Publication number | Publication date |
|---|---|
| JP2005213569A (en) | 2005-08-11 |
| TW200530415A (en) | 2005-09-16 |
| CN1648278A (en) | 2005-08-03 |
| TWI281948B (en) | 2007-06-01 |
| KR20060042874A (en) | 2006-05-15 |
| JP4475967B2 (en) | 2010-06-09 |
| KR100635903B1 (en) | 2006-10-18 |
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