CN100343953C - Method for removing photoresist in semiconductor manufacturing process - Google Patents
Method for removing photoresist in semiconductor manufacturing process Download PDFInfo
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- CN100343953C CN100343953C CNB2004800008915A CN200480000891A CN100343953C CN 100343953 C CN100343953 C CN 100343953C CN B2004800008915 A CNB2004800008915 A CN B2004800008915A CN 200480000891 A CN200480000891 A CN 200480000891A CN 100343953 C CN100343953 C CN 100343953C
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- mist
- semiconductor substrate
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- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 79
- 238000000034 method Methods 0.000 title claims abstract description 52
- 239000004065 semiconductor Substances 0.000 title claims abstract description 34
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- 238000004380 ashing Methods 0.000 claims abstract description 30
- 239000001257 hydrogen Substances 0.000 claims abstract description 26
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 26
- 239000007789 gas Substances 0.000 claims abstract description 9
- 239000000758 substrate Substances 0.000 claims description 36
- 239000003595 mist Substances 0.000 claims description 18
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 14
- 238000005530 etching Methods 0.000 claims description 11
- 150000002431 hydrogen Chemical class 0.000 claims description 11
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 230000000694 effects Effects 0.000 claims description 6
- 239000012535 impurity Substances 0.000 claims description 6
- 239000002245 particle Substances 0.000 claims description 5
- 239000001307 helium Substances 0.000 claims description 4
- 229910052734 helium Inorganic materials 0.000 claims description 4
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 4
- 238000005468 ion implantation Methods 0.000 claims description 4
- 229910021529 ammonia Inorganic materials 0.000 claims description 3
- 230000001186 cumulative effect Effects 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims 2
- 150000002500 ions Chemical class 0.000 abstract description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 9
- 229910052710 silicon Inorganic materials 0.000 abstract description 9
- 239000010703 silicon Substances 0.000 abstract description 9
- 230000015572 biosynthetic process Effects 0.000 abstract description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 description 8
- 230000003647 oxidation Effects 0.000 description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 238000004627 transmission electron microscopy Methods 0.000 description 4
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000003917 TEM image Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- -1 for example Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
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Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/427—Stripping or agents therefor using plasma means only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/266—Bombardment with radiation with high-energy radiation producing ion implantation using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
- H01L21/31138—Etching organic layers by chemical means by dry-etching
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Plasma & Fusion (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Drying Of Semiconductors (AREA)
- High Energy & Nuclear Physics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
Disclosed herein is a method for removing a photoresist in a semiconductor manufacturing process wherein the removal of a photoresist, i.e. ashing, is carried out using plasma generated from a hydrogen (H2)-containing mixed gas. According to the method, the formation of a silicon oxide film can be minimized, thereby preventing silicon loss without no popping, even residues of a high-dose ion implanted DUV photoresist can be completely removed, and further ashing efficiency can be enhanced.
Description
Technical field
The present invention relates to a kind of method of in semiconductor fabrication process, removing photoresist, particularly relate to a kind of method of in semiconductor fabrication process, removing photoresist, wherein adopt from containing hydrogen (H
2) mist in the plasma that produces realize the removal of photoresist, i.e. ashing.
Background technology
Photoetching process is a kind of of semiconductor fabrication process, and it comprises step: photoresist is spun on the Semiconductor substrate, thereby forms the photoresist layer on described substrate; Be exposed to the photoresist layer in the light selectively; The photoresist layer that exposes is developed, thereby form the photoresist pattern at the top of described Semiconductor substrate; Etching or impurity is injected in the expose portion of described Semiconductor substrate; And the photoresist pattern that plays the mask effect in described etching or impurity injection process is removed (ashing).
After finishing ashing, some step following closely, for example, being used to interconnect is formed at the wiring of the device on the wafer, and the formation of metal wiring layer, is used to form the metal film that plays effect such as weld pad, its objective is in order to be connected to chip exterior.
In the middle of these steps, ashing is a kind of etch process, is used for injecting the back at etching or ion and removes photoresist.With regard to the operating position here, photoresist is meant the mask that is used for being etched in pattern on the base substrate or selectively ion is injected into the expose portion of described substrate.
Because this type of cineration technics normally adopts oxygen (O
2) plasma is realized, is a kinds of oxidation reaction so described photoresist is removed, wherein photoresist and oxygen react.In addition, because having, oxidation and burning get in touch, so the removal of described photoresist is become " ashing ".The device definition that will be used to carry out ashing treatment is " ashing machine ".
Along with the latest development of semiconductor fabrication, it is highly integrated and high-speed to require device to possess, thus more and more stricter to the requirement of wafer fabrication technology, having caused a problem thus, promptly can lose gradually as the amount of the silicon of wafer main component.
In podzolic process be that process gas generates under the situation of plasma with oxygen, the part of wafer surface can form oxide skin(coating) with oxygen reaction.Be formed at oxidation film on the part of wafer surface and can cause the remarkable loss of doped polycrystalline silicon, doped polycrystalline silicon can be used as to make and requires to possess the device of shallow junction and the material of electrode.
In addition, in traditional photoresist cineration technics, after wafer carries out the high dose ion injection, the blast hole phenomenon may take place.For fear of blast hole (popping) phenomenon, reduce technological temperature or inject further execution reinforcement process of back in high dose ion.But the blast hole phenomenon does not still solve.
In high-density silicon substrate, have G line (G-line) light of 436nm wave band or have I line (I-line) light wavelength of 365nm wave band oversize, to such an extent as to live width is excessive, can't on substrate, be defined.Therefore, seek out higher accuracy, high dose ion injection deep ultraviolet (DUV) light and the X-ray that have 248nm wave band and 193nm wave band have respectively obtained using more conveniently.
And, constitute by big molecule owing to traditional I linear light causes resist, and have the viscosity of height, substitute so in high-density silicon substrate, can be injected the DUV photoresist by high dose ion.
But these high dose ion are injected the DUV photoresist and are had such problem, promptly can't thoroughly remove remaining photoresist by the traditional cineration technics that adopts oxygen.
Summary of the invention
Therefore, the present invention creates considering under the situation of the problems referred to above, the purpose of this invention is to provide a kind of method of removing photoresist in semiconductor fabrication process, and wherein, the removal of photoresist, i.e. ashing are to adopt from comprising hydrogen (H
2) mist in the plasma that produces realize.
Another object of the present invention provides a kind of method of removing photoresist in semiconductor fabrication process, wherein, the formation of silicon oxide film is minimized, thereby under the situation that the blast hole phenomenon does not take place, prevent the loss of silicon, even the high dose ion of remnants can be injected the DUV photoresist and thoroughly remove.
Another purpose of the present invention provides a kind of method of removing photoresist in semiconductor fabrication process, and wherein, ashing efficient can be enhanced.
In order to realize above-mentioned target of the present invention, the present invention proposes to adopt hydrogen (H in podzolic process
2) plasma, so that remove photoresist from Semiconductor substrate.The present invention is applicable to all photoresist ashing treatment, and it is especially effective that high dose ion is injected substrate.
According to the present invention, can realize above-mentioned target by a kind of method of in semiconductor fabrication process, removing photoresist, it step that comprises has: photoresist is spun on the Semiconductor substrate, thereby forms the photoresist layer on substrate; Be exposed to photoresist in the light selectively; The photoresist layer that is exposed is developed, thereby form the photoresist pattern at the top of Semiconductor substrate; Etching or impurity is injected in the expose portion of Semiconductor substrate; And remove the photoresist pattern that in etching or ion implantation process, plays the mask effect, i.e. ashing, wherein ashing is to utilize from containing hydrogen (H
2) mist in the plasma that produces finish, therefore, even at high temperature, the blast hole phenomenon can not take place, thereby avoided the generation of particle yet.
Especially, owing to contain the generation that the use of the plasma that produces in the mist of hydrogen minimizes oxidation thing film, so the loss of silicon also can be dropped to minimum.
In addition, described Semiconductor substrate is preferably injected the substrate of making by high dose ion.
In addition, described photoresist preferably comprises DUV (deep UV) photoresist.
In addition, contain hydrogen (H
2) mist preferably hydrogen and nitrogen (N
2) or the admixture of gas of helium (He).
In addition, based on the cumulative volume of mist, hydrogen is hydrogen (H in mist
2) volume content preferably in 2% to 100% scope.
At last, preferably in 100 ℃ to 200 ℃ temperature range, carry out ashing.
According to another aspect of the present invention, can realize above-mentioned target by a kind of method of in semiconductor fabrication process, removing photoresist, it step that comprises has: photoresist is spun on the Semiconductor substrate, thereby forms the photoresist layer on substrate; Selectively the photoresist layer is exposed in the light; The photoresist layer that is exposed is developed, thereby form the photoresist pattern at the top of Semiconductor substrate; Etching or impurity is injected in the expose portion of Semiconductor substrate; And remove the photoresist pattern that in etching or ion implantation process, plays the mask effect, i.e. ashing, wherein ashing is to utilize from containing hydrogen (H
2) mist or ammonia (NH
3) in the plasma that produces finish, therefore, even at high temperature, the blast hole phenomenon can not take place, thereby avoided the generation of particle yet.
Description of drawings
By following detailed description with the accompanying drawing, above-mentioned and other purposes of the present invention, feature and other advantages can obtain understanding more clearly, wherein:
Fig. 1 is the transmission electron microscopy figure (TEM) of the silicon substrate that obtains after finishing ashing according to conventional method.
Fig. 2 is the transmission electron microscopy figure (TEM) of the silicon substrate that obtains after finishing ashing according to one embodiment of the invention.
Embodiment
Now, with reference to the accompanying drawing that preferred embodiment is illustrated the present invention is described in more details.Ashing is to finish according to the condition of summing up in the following table 1.
Table 1
| Numbering | O 2 (sccm) | N 2 (sccm) | H 2/N 2 (sccm) | Treatment temperature (℃) | Processing time (second) | Oxide film thickness () | The TEM image |
| Technology A | 7000 | 800 | 250 | 75 | 17 | Fig. 1 | |
| Technology B | - | - | 8000 | 250 | 285 | 0 | Fig. 2 |
In brief, technology A is a kind of traditional cineration technics, and wherein, having adopted flow velocity is the O of 7000sccm
2With flow velocity be the N of 800sccm
2, technological temperature is 250 ℃, lasts 75 seconds.After ashing finished, the thickness of the oxidation film of formation was measured by transmission electron microscope.The result as shown in Figure 1.The thickness of measured oxidation film is 17 .
Next, technology B is the ashing treatment that a specific embodiment according to the present invention carries out, and wherein, having adopted flow velocity is the H of 8000sccm
2/ N
2, technological temperature is 250 ℃, lasts 285 seconds.After ashing finished, the thickness of the oxidation film of formation was measured by transmission electron microscope.The result as shown in Figure 2.The thickness of oxide is very little, so that can't measure.
After under the condition of summing up as table 1, carrying out technology A and technology B, observe the inside of each process cavity by observation panel.As a result, in traditional handicraft (technology A), observed the blast hole phenomenon, and adopted the mist (H that contains hydrogen at (technology B) according to one embodiment of present invention
2/ N
2) technology in the blast hole phenomenon does not take place.
Table 2
| Numbering | Pressure (Torr) | O 2 (sccm) | N 2 (sccm) | H 2/N 2 (sccm) | Technological temperature (℃) | Process time (second) |
| Technology C | 2 | 17000 | 1900 | - | 250 | 150 |
| Technology D | 2 | 8000 | - | 8000 | 150 | 150 |
Under the condition of in table 2, summing up, after each is comprised high dose ion and inject the wafer of DUV photoresist and carry out ashing, measure the amount that remains in the photoresist on the wafer.
Technology C is a traditional handicraft, and wherein, under the operation pressure of 2 holders, having adopted flow velocity is the O of 17000sccm
2With flow velocity be the N of 1900sccm
2, technological temperature is 250 ℃, lasts 150 seconds, to remove photoresist.
Technology D is according to technology of the present invention, and under the operation pressure of 2 holders, having adopted flow velocity is the O of 8000sccm
2With flow velocity be the H of 8000sccm
2/ N
2, technological temperature is 150 ℃, lasts 150 seconds, to remove photoresist.
As the result who under condition separately, removes photoresist, technology C is residual photoresist in a large number, technology D has then thoroughly removed residual photoresist.
Specifically, when adopting hydrogen or containing the gas of hydrogen, for example, hydrogen as shown in table 2 and nitrogen (N
2) or the mist of helium (He) when removing photoresist, photoresist thoroughly can be removed.Similarly, even adopting hydrogen based gas (hydrogen-based gas), for example during the gas of ammonia, can expect residual photoresist is thoroughly removed.
Even under 100 to 200 ℃ processing (reaction) temperature, also photoresist thoroughly can be removed.
Commercial Application
From The above results as can be seen, because method of the present invention has prevented the formation of oxidation film in removing the process of photoresist, therefore can prevent to be used to make the doped monocrystalline silicon of material of the device that requires shallow junction and electrode or the loss of polysilicon.
In addition, in podzolic process, when adopting method of the present invention to remove high dose ion to inject photoresist, even under 200 ℃ or higher temperature, also the blast hole phenomenon can not take place, thereby avoided the generation of particle, this helps the raising of semiconductor fabrication yield.
The method according to this invention is removed residually even adopt at low temperatures based on the compound of hydrogen or mixture, when the high dose ion of using in high-density silicon substrate is basically injected the DUV photoresist, also residual photoresist thoroughly can be removed.
Although showed the preferred embodiments of the present invention for purposes of illustration, but those skilled in the art will recognize, under the situation of the scope and spirit of the present invention that disclosed in the accompanying Claim book, various modifications, to add and delete all be possible.
Claims (12)
1. method of in semiconductor fabrication process, removing photoresist, it may further comprise the steps: a photoresist is spun on the Semiconductor substrate, thereby forms a photoresist layer on described substrate; Selectively the photoresist layer is exposed in the light; The described photoresist layer that is exposed is developed, thereby form a photoresist pattern at the top of described Semiconductor substrate; Etching or impurity is injected in the expose portion of described Semiconductor substrate; And remove the described photoresist pattern that in described etching or ion implantation process, plays the mask effect, i.e. ashing,
Wherein, described ashing is to adopt from containing hydrogen H
2Mist in the plasma that produces finish under the temperature T of 100 ℃≤T＜250 ℃ satisfying, thereby, even at high temperature also the blast hole phenomenon can not take place, thereby avoided the generation of particle.
2. the method for claim 1, wherein described Semiconductor substrate is to inject the substrate of making by high dose ion.
3. the method for claim 1, wherein described photoresist comprises a deep UV photoresist.
4. the method for claim 1, wherein described hydrogen H that contains
2Mist be hydrogen and nitrogen N
2Or the admixture of gas of helium He.
5. as any one described method in the claim 1 to 4, wherein, based on the cumulative volume of mist, hydrogen H in described mist
2Volume content in 2～100% scope.
6. as any one described method in the claim 1 to 4, wherein, ashing is to finish under 100～200 ℃ temperature.
7. method of in semiconductor fabrication process, removing photoresist, it step that comprises has: a photoresist is spun on the Semiconductor substrate, thereby forms a photoresist layer on described substrate; Selectively the photoresist layer is exposed in the light; The described photoresist layer that is exposed is developed, thereby form a photoresist pattern at the top of described Semiconductor substrate; Etching or impurity is injected in the expose portion of described Semiconductor substrate; And remove the described photoresist pattern that in described etching or ion implantation process, plays the mask effect, i.e. ashing, wherein, described ashing is to adopt from containing hydrogen H
2Mist in or ammonia NH
3In the plasma that generates finish under the temperature T of 100 ℃≤T＜250 ℃ satisfying, thereby, even at high temperature also the blast hole phenomenon can not take place, thereby avoided the generation of particle.
8. method as claimed in claim 7, wherein said Semiconductor substrate are to inject the substrate of making by high dose ion.
9. method as claimed in claim 7, wherein, described photoresist comprises a deep UV photoresist.
10. method as claimed in claim 7, wherein, the described mist that contains hydrogen is hydrogen and nitrogen N
2Or the admixture of gas of helium He.
11. as any one described method of claim 7 to 10, wherein, based on the cumulative volume of mist, hydrogen H in described mist
2Volume content in 2～100% scope.
12. as any one described method of claim 7 to 10, wherein, ashing is to finish under 100～200 ℃ temperature.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020030034960 | 2003-05-30 | ||
| KR20030034960A KR100542031B1 (en) | 2003-05-30 | 2003-05-30 | Method for removing photo-resist in semiconductor manufacturing process |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1701414A CN1701414A (en) | 2005-11-23 |
| CN100343953C true CN100343953C (en) | 2007-10-17 |
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ID=36383780
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2004800008915A Expired - Fee Related CN100343953C (en) | 2003-05-30 | 2004-05-29 | Method for removing photoresist in semiconductor manufacturing process |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP2006513586A (en) |
| KR (1) | KR100542031B1 (en) |
| CN (1) | CN100343953C (en) |
| TW (1) | TWI251265B (en) |
| WO (1) | WO2004107418A1 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8193096B2 (en) | 2004-12-13 | 2012-06-05 | Novellus Systems, Inc. | High dose implantation strip (HDIS) in H2 base chemistry |
| KR100679826B1 (en) * | 2004-12-22 | 2007-02-06 | 동부일렉트로닉스 주식회사 | Method for removing the polymer residue of MIM area |
| US7288488B2 (en) * | 2005-05-10 | 2007-10-30 | Lam Research Corporation | Method for resist strip in presence of regular low k and/or porous low k dielectric materials |
| KR100736126B1 (en) * | 2005-12-28 | 2007-07-06 | 동부일렉트로닉스 주식회사 | Method for manufacturing semiconductor device |
| KR100727706B1 (en) * | 2006-05-15 | 2007-06-13 | 동부일렉트로닉스 주식회사 | Method for stabilizing atmosphere inside the asher chamber |
| JP2009021577A (en) * | 2007-06-13 | 2009-01-29 | Shibaura Mechatronics Corp | Ashing method and ashing device |
| CN101458463B (en) * | 2007-12-13 | 2011-08-17 | 中芯国际集成电路制造(上海)有限公司 | Ashing method |
| US20120024314A1 (en) * | 2010-07-27 | 2012-02-02 | Axcelis Technologies, Inc. | Plasma mediated ashing processes |
| CN102043355A (en) * | 2009-10-23 | 2011-05-04 | 联华电子股份有限公司 | Method for removing photoresist |
| US20110143548A1 (en) | 2009-12-11 | 2011-06-16 | David Cheung | Ultra low silicon loss high dose implant strip |
| US8802545B2 (en) * | 2011-03-14 | 2014-08-12 | Plasma-Therm Llc | Method and apparatus for plasma dicing a semi-conductor wafer |
| CN102779748B (en) * | 2011-05-09 | 2016-03-30 | 中芯国际集成电路制造(上海)有限公司 | The manufacture method of semiconductor device |
| US9613825B2 (en) | 2011-08-26 | 2017-04-04 | Novellus Systems, Inc. | Photoresist strip processes for improved device integrity |
| CN103378007B (en) * | 2012-04-26 | 2017-07-28 | 联华电子股份有限公司 | The preparation method of semiconductor element |
| CN103578971B (en) * | 2013-10-18 | 2016-08-17 | 上海华力微电子有限公司 | A kind of high energy ion inject after remove gluing method |
| US9514954B2 (en) | 2014-06-10 | 2016-12-06 | Lam Research Corporation | Peroxide-vapor treatment for enhancing photoresist-strip performance and modifying organic films |
| CN105223787B (en) * | 2014-07-01 | 2020-03-10 | 中芯国际集成电路制造(上海)有限公司 | Ashing method of photoresist pattern |
| CN111308867A (en) * | 2020-02-25 | 2020-06-19 | 上海华力集成电路制造有限公司 | Photoresist stripping and removing method |
| US20220102138A1 (en) * | 2020-09-30 | 2022-03-31 | Taiwan Semiconductor Manufacturing Co., Ltd. | Interconnect Structure for Semiconductor Devices |
| CN114823297B (en) * | 2022-04-19 | 2023-01-31 | 度亘激光技术（苏州）有限公司 | Photoresist removing process and semiconductor manufacturing process |
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| US6235453B1 (en) * | 1999-07-07 | 2001-05-22 | Advanced Micro Devices, Inc. | Low-k photoresist removal process |
| JP2001313280A (en) * | 2000-04-02 | 2001-11-09 | Axcelis Technologies Inc | Postetched photoresist and method for removing residue |
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| JP2002158210A (en) * | 2000-11-20 | 2002-05-31 | Shibaura Mechatronics Corp | Resist removing method |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03116737A (en) * | 1989-09-28 | 1991-05-17 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
| JPH10270424A (en) * | 1997-03-27 | 1998-10-09 | Hitachi Ltd | Method of forming semiconductor element pattern |
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-
2003
- 2003-05-30 KR KR20030034960A patent/KR100542031B1/en not_active IP Right Cessation
-
2004
- 2004-05-29 JP JP2005518198A patent/JP2006513586A/en active Pending
- 2004-05-29 WO PCT/KR2004/001279 patent/WO2004107418A1/en active Application Filing
- 2004-05-29 CN CNB2004800008915A patent/CN100343953C/en not_active Expired - Fee Related
- 2004-05-31 TW TW93115506A patent/TWI251265B/en not_active IP Right Cessation
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6391791B1 (en) * | 1998-08-07 | 2002-05-21 | Ulvac Coating Corporation | Dry-etching method and apparatus, photomasks and method for the preparation thereof, and semiconductor circuits and methods for the fabrication thereof |
| US6235453B1 (en) * | 1999-07-07 | 2001-05-22 | Advanced Micro Devices, Inc. | Low-k photoresist removal process |
| US6346489B1 (en) * | 1999-09-02 | 2002-02-12 | Applied Materials, Inc. | Precleaning process for metal plug that minimizes damage to low-κ dielectric |
| JP2001313280A (en) * | 2000-04-02 | 2001-11-09 | Axcelis Technologies Inc | Postetched photoresist and method for removing residue |
| JP2002158210A (en) * | 2000-11-20 | 2002-05-31 | Shibaura Mechatronics Corp | Resist removing method |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2004107418A1 (en) | 2004-12-09 |
| TWI251265B (en) | 2006-03-11 |
| TW200426917A (en) | 2004-12-01 |
| JP2006513586A (en) | 2006-04-20 |
| KR100542031B1 (en) | 2006-01-11 |
| CN1701414A (en) | 2005-11-23 |
| KR20040103073A (en) | 2004-12-08 |
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