CN114823297B - Photoresist removing process and semiconductor manufacturing process - Google Patents
Photoresist removing process and semiconductor manufacturing process Download PDFInfo
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- CN114823297B CN114823297B CN202210412459.7A CN202210412459A CN114823297B CN 114823297 B CN114823297 B CN 114823297B CN 202210412459 A CN202210412459 A CN 202210412459A CN 114823297 B CN114823297 B CN 114823297B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0272—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers for lift-off processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0331—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers for lift-off processes
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Abstract
The invention provides a photoresist removing process and a semiconductor manufacturing process, and relates to the technical field of semiconductor manufacturing processes. The photoresist removing process comprises the following steps: stripping the photoresist on the substrate to obtain the substrate attached with the residual photoresist; and putting the substrate attached with the residual photoresist into the chamber, adjusting the ambient temperature in the chamber to be more than or equal to a preset temperature, continuously introducing inert gas into the chamber, and simultaneously introducing hydrogen-containing gas into the chamber at intervals of a first time to remove the residual photoresist on the substrate. The photoresist removing process provided by the invention can effectively remove residual photoresist by utilizing the ambient temperature which is more than or equal to the preset temperature (the preset temperature can be 290-310 ℃) and the hydrogen-containing gas, and can prevent the substrate from being damaged due to the fact that the substrate is continuously in the high-temperature high-proportion hydrogen-containing gas environment for a long time while removing the photoresist, thereby improving the product yield.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing processes, in particular to a photoresist removing process and a semiconductor manufacturing process.
Background
In the conventional manufacturing process, a photoresist is coated on a substrate, the substrate is exposed to light to develop the photoresist, a mask pattern is etched by a dry method or a wet method, and the photoresist is stripped. In the photoresist stripping, the photoresist is usually removed by spraying high-pressure NMP (N-methylpyrrolidone, abbreviated as NMP), but this method cannot completely remove the photoresist, and therefore, after the photoresist is stripped, the residual photoresist needs to be removed by using a hydrogen-containing gas such as ammonia gas. After the residual photoresist is removed, the substrate after the photoresist is removed is plated in a PECVD (Plasma Enhanced Chemical vapor Deposition, abbreviated as PECVD) apparatus, so that the manufacturing process of the semiconductor can be completed.
However, in the semiconductor manufacturing process, when the residual photoresist is removed by using hydrogen-containing gas such as ammonia gas, the ambient temperature is usually kept at a high temperature of not less than 290 ℃, so that the substrate is required to be kept in a high-temperature high-proportion hydrogen-containing gas environment for a long time, and the substrate is easily damaged.
Disclosure of Invention
The present invention is directed to a photoresist removing process and a semiconductor manufacturing process, so as to solve the technical problem existing in the prior art that when the residual photoresist is removed in the prior semiconductor manufacturing process, the ambient temperature is usually kept at a high temperature, such as not lower than 290 ℃, so that the substrate needs to be kept in a high-temperature high-proportion hydrogen-containing gas environment for a long time, thereby causing easy damage to the substrate.
In a first aspect, the present invention provides a photoresist removal process, comprising:
s1: stripping the photoresist on the substrate and obtaining the substrate attached with the residual photoresist;
s2: and putting the substrate attached with the residual photoresist into a chamber, adjusting the environmental temperature in the chamber to be more than or equal to a preset temperature, continuously introducing inert gas into the chamber, and simultaneously introducing hydrogen-containing gas into the chamber at intervals of a first time so as to remove the residual photoresist on the substrate.
In an alternative embodiment, in step S2, the cumulative time of the multiple passes of the hydrogen-containing gas into the chamber is equal to half of the total time of the continuous passes of the inert gas.
In an alternative embodiment, in step S2, the duration of each time the hydrogen-containing gas is introduced into the chamber is a second duration, and the second duration is equal to the first duration.
In an alternative embodiment, the first and second time periods are each 8-12s.
In an alternative embodiment, in step S2, after the hydrogen-containing gas is introduced into the chamber for the second time period, the hydrogen-containing gas is introduced into the chamber at intervals of the first time period.
In an alternative embodiment, in step S2, the introduction amount of the hydrogen-containing gas introduced multiple times is sequentially decreased.
In an alternative embodiment, during two consecutive passes of the hydrogen-containing gas, the amount of the hydrogen-containing gas passing in the next pass is reduced by 8-12% of the amount of the hydrogen-containing gas passing in the previous pass.
In an alternative embodiment, in step S2, the inert gas is continuously introduced for a total time of 2 to 5min.
In an alternative embodiment, in step S2, the ambient temperature in the chamber is 310-390 ℃.
In a second aspect, the present invention provides a semiconductor manufacturing process comprising the photoresist removal process of any one of the preceding embodiments, and comprising, after step S2:
s3: and coating the substrate with the residual photoresist removed in the chamber.
The photoresist removing process provided by the invention comprises the following steps of S1: stripping the photoresist on the substrate and obtaining the substrate attached with the residual photoresist; s2: and putting the substrate attached with the residual photoresist into a chamber, adjusting the ambient temperature in the chamber to be more than or equal to a preset temperature, continuously introducing inert gas into the chamber, and simultaneously introducing hydrogen-containing gas into the chamber at intervals of a first time interval to remove the residual photoresist on the substrate. The preset temperature is the minimum temperature required by the hydrogen-containing gas to treat the residual photoresist, and can be 290-310 ℃. The photoresist removing process provided by the invention firstly carries out the step S1 to strip the photoresist on the substrate of the semiconductor, and after the step S1, most of the photoresist on the substrate is stripped, but the residual photoresist still exists. Since the hydrogen-containing gas is a reducing gas, the hydrogen-containing gas in the chamber can be subjected to a plasma reaction at an ambient temperature greater than or equal to a predetermined temperature, and the hydrogen-containing gas forming the plasma can be used to remove the residual photoresist, when the photoresist removal process of the present invention is used to remove the residual photoresist, step S2 can be performed in the chamber after step S1 until the residual photoresist is removed. Wherein, the chamber can be PECVD equipment and also can be ashing equipment. Further, step S1 and step S2 may be performed in the chamber, and at this time, in order to respectively implement step S1 and step S2, the gas introduced into the chamber, the ambient temperature, and the reaction time may be respectively adjusted corresponding to step S1 and step S2, compared to the prior art, when step S1 and step S2 are performed in the chamber, the substrate does not need to be transferred between devices, and the residual photoresist does not need to be removed using oxygen, and at this time, the photoresist removal process may not only effectively improve the removal efficiency, prevent the substrate from contacting with the outside air to generate an oxidation reaction when the substrate is transferred between devices, but also prevent the substrate from generating an oxidation reaction when the substrate contacts with the excessive oxygen in the removal process, thereby ensuring the quality of the substrate and improving the yield of the product. In addition, hydrogen-containing gas is introduced into the chamber every other first time period in the step S2, so that the substrate can be prevented from being damaged due to the fact that the substrate is continuously in a high-temperature high-proportion hydrogen-containing gas environment for a long time on the premise that the residual photoresist is removed, and the product yield can be improved.
Compared with the prior art, the photoresist removing process provided by the invention has the advantages that the hydrogen-containing gas can be utilized to remove the residual photoresist on the substrate in the chamber with the ambient temperature being greater than or equal to the preset temperature, and the hydrogen-containing gas is introduced every other first time, so that the substrate can be prevented from being damaged due to the fact that the substrate is continuously in the high-temperature high-proportion hydrogen-containing gas environment for a long time on the premise of ensuring the removal of the residual photoresist, and the product yield can be further improved.
The semiconductor manufacturing process provided by the invention comprises the photoresist removing process and a step S3 after the step S2: and coating the substrate with the residual photoresist removed in the chamber. The semiconductor manufacturing process provided by the invention comprises the photoresist removing process, so the semiconductor manufacturing process provided by the invention has the same beneficial effect as the photoresist removing process, and the step of coating the substrate can be integrated in the chamber, thereby further improving the manufacturing efficiency of the semiconductor.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.
FIG. 1 is a schematic flow chart of a photoresist removal process provided by an embodiment of the present invention;
FIG. 2 is a schematic diagram of a partial structure of a substrate with a photoresist attached thereon according to an embodiment of the present invention;
FIG. 3 is a schematic view of a partial structure of a substrate and a residual photoresist according to an embodiment of the present invention;
fig. 4 is a flowchart illustrating a semiconductor manufacturing process according to an embodiment of the invention.
An icon: 1-a substrate; 2-photoresist.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all embodiments of the present invention. The components of embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the present invention, as presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be obtained by a person skilled in the art without inventive step based on the embodiments of the present invention, are within the scope of protection of the present invention.
Some embodiments of the invention are described in detail below with reference to the accompanying drawings. The embodiments and features of the embodiments described below can be combined with each other without conflict.
Example (b):
as shown in fig. 1, the photoresist removing process provided in this embodiment includes:
step S1: stripping the photoresist 2 on the substrate 1 and obtaining the substrate 1 attached with residual photoresist;
step S2: and (3) putting the substrate 1 attached with the residual photoresist into a chamber, adjusting the ambient temperature in the chamber to be more than or equal to a preset temperature, continuously introducing inert gas into the chamber, and simultaneously introducing hydrogen-containing gas into the chamber at intervals of a first time to remove the residual photoresist 2 on the substrate 1.
In the photoresist removing process provided by this embodiment, step S1 is performed first to strip the photoresist 2 on the semiconductor substrate 1, and after step S1, as shown in fig. 2 and fig. 3, most of the photoresist 2 on the substrate 1 is stripped, but the residual photoresist 2 still remains. In step S1, a chamber may be used to eject NMP at high pressure to the substrate in the inner cavity thereof to strip the photoresist 2.
The preset temperature is the minimum temperature required for processing the residual photoresist by the hydrogen-containing gas, and the preset temperature can be 290-310 ℃, and the preset temperature is preferably 300 ℃ in the embodiment. The environment temperature in the chamber, which is greater than or equal to the preset temperature, may enable the plasma reaction to form a plasma, and since the hydrogen-containing gas is a reducing gas, the hydrogen-containing gas forming the plasma may be used to remove the residual photoresist 2, when the photoresist removal process of this embodiment is used to remove the residual photoresist 2, step S2 may be performed in the chamber after step S1 until the residual photoresist 2 is removed, where the chamber may be a PECVD apparatus or an ashing apparatus.
Further, both the step S1 and the step S2 may be performed in the chamber, and in order to respectively implement the step S1 and the step S2, the gas introduced into the chamber, the ambient temperature, and the reaction time may be respectively adjusted corresponding to the step S1 and the step S2. Compared with the prior art, when the steps S1 and S2 are carried out in the chamber, the substrate 1 does not need to be transferred between devices, and the residual photoresist 2 does not need to be removed by using oxygen, so that the photoresist removing process can not only effectively improve the removing efficiency, prevent the substrate 1 from being in contact with the outside air to generate oxidation reaction when the substrate 1 is transferred between the devices, but also prevent the substrate 1 from generating oxidation reaction when excessive oxygen is in contact with the substrate 1 in the removing process, further ensure the quality of the substrate 1 and improve the yield of products.
In addition, hydrogen-containing gas is introduced into the chamber every first time in the step S2, so that the substrate 1 can be prevented from being damaged due to being continuously in a high-temperature high-proportion hydrogen-containing gas environment for a long time on the premise of ensuring removal of the residual photoresist 2, and the product yield can be improved.
It should be noted that, when the hydrogen-containing gas is introduced in step S2, the hydrogen-containing gas can remove the photoresist 2, and when the hydrogen-containing gas is not introduced, the inert gas continuously introduced can timely discharge the removed photoresist 2 product to the outside of the chamber, so that the photoresist 2 on the substrate 1 can be effectively removed.
Compared with the prior art, the photoresist removing process provided by the embodiment utilizes the hydrogen-containing gas to remove the residual photoresist 2 on the substrate 1 in the chamber with the ambient temperature greater than or equal to the preset temperature, and the hydrogen-containing gas is introduced every first time, so that the substrate 1 can be prevented from being damaged due to the fact that the substrate is continuously in the high-temperature high-proportion hydrogen-containing gas environment for a long time on the premise of ensuring that the residual photoresist 2 is removed, and further the product yield can be improved.
In this embodiment, the inert gas can serve as a dilution and carrier gas, so that the hydrogen-containing gas can be more uniformly distributed in the chamber, thereby facilitating the hydrogen-containing gas to fully perform the plasma reaction. The inert gas can promote the hydrogen-containing gas in the step S2 to remove the residual photoresist 2, thereby improving the removal efficiency of the photoresist 2.
Wherein, the inert gas can be nitrogen, and the hydrogen-containing gas can be ammonia.
In step S2, the cumulative time of the multiple passes of the hydrogen-containing gas into the chamber is equal to half of the total time of the continuous passes of the inert gas.
When the cumulative time of the hydrogen-containing gas is half of the total time of continuously introducing the inert gas, the cumulative time of the hydrogen-containing gas is within a better range, and the introduction time of the hydrogen-containing gas not only can ensure the treatment effect of the photoresist 2, but also can prevent the substrate 1 from being damaged due to long-time use of high-proportion hydrogen-containing gas at high temperature.
Further, in step S2, the duration of each time of introducing the hydrogen-containing gas into the chamber is a second duration, and the second duration is equal to the first duration.
The second time period is equal to the first time period, and the hydrogen-containing gas in the step S2 is introduced into the chamber in a pulse mode. Compared with the continuous introduction of the hydrogen-containing gas, the hydrogen-containing gas is introduced in a pulse mode, so that the proportion of the hydrogen can be maintained in a proper range, and the substrate 1 is prevented from being damaged due to the fact that the proportion of the hydrogen-containing gas in the chamber is too high.
It should be noted that, in step S2, the flow rate of the hydrogen-containing gas is maintained at a higher flow rate value, such as 30SCCM, in order to realize the removal process of the photoresist 2. At this time, the ambient temperature in the chamber in step S2 is higher, and the proportion of the hydrogen-containing gas is higher, so that although the removal effect of the photoresist 2 can be effectively improved by the high temperature and the high proportion of the hydrogen-containing gas, the substrate 1 is easily damaged. The time for removing the photoresist 2 by the hydrogen-containing gas is controllable by the pulse type hydrogen-containing gas introduction mode in the embodiment, so that the photoresist 2 can be prevented from being treated by the high-temperature high-proportion hydrogen-containing gas for a long time, and the substrate 1 can be prevented from being damaged while the removal effect of the photoresist 2 is improved.
Further, the first time period and the second time period are both 8-12s.
When the first time duration and the second time duration are both 8-12S, not only the residual photoresist 2 can be completely removed in the step S2, but also the substrate 1 can be effectively prevented from being damaged, so that the first time duration and the second time duration are both preferably 8-12S in this embodiment.
In step S2, after the hydrogen-containing gas is introduced into the chamber for the second duration, the hydrogen-containing gas is introduced into the chamber every other first duration.
Specifically, when the step S2 is started, the hydrogen-containing gas is firstly introduced for 8 to 12 seconds, and then the hydrogen-containing gas is introduced again every 8 to 12 seconds.
When the hydrogen-containing gas is introduced for the second time period firstly and then the hydrogen-containing gas is introduced for the first time period, the residual photoresist 2 is removed for a period of time and then the photoresist 2 product is immediately discharged out of the chamber by using the inert gas, and compared with the removal mode of introducing the inert gas firstly and then introducing the hydrogen-containing gas for the first time period, the waste of the inert gas can be effectively prevented.
In step S2, the introduction amount of the hydrogen-containing gas introduced for a plurality of times is sequentially decreased progressively.
Since the required amount of the hydrogen-containing gas is gradually decreased as the photoresist 2 is gradually removed, the substrate 1 may be damaged at a high temperature by using the same amount of the hydrogen-containing gas as that introduced at the previous stage in the later stage of step S2.
Therefore, in this embodiment, it is preferable that the flowing amount of the hydrogen-containing gas flowing in multiple times is sequentially decreased, for example, the flowing amount of the hydrogen-containing gas flowing in for the first time is 30SCCM, and the flowing amount of the hydrogen-containing gas flowing in for the subsequent time is less than 30SCCM. The introduction amount of the hydrogen-containing gas is gradually decreased, so that the damage condition of the substrate 1 in a high-temperature environment can be reduced while the residual photoresist 2 is completely removed.
Furthermore, in the process of two adjacent times of introduction of the hydrogen-containing gas, the reduction amount of the introduction amount of the hydrogen-containing gas in the next time is 8-12% of the introduction amount of the hydrogen-containing gas in the last time.
When the reduction amount of the hydrogen-containing gas introduced next time is 8-12% of the hydrogen-containing gas introduced last time, the removal effect of the residual photoresist 2 in the step S2 can be optimized, so that the quality of the substrate 1 is effectively improved.
Further, in step S2, the total time of continuously introducing the inert gas is 2-5min.
When the total time of continuously introducing the inert gas is 2-5min, the residual photoresist 2 in the step S2 can be effectively and completely removed, and the substrate 1 can be effectively prevented from being damaged due to being in the high-temperature high-proportion hydrogen-containing gas environment for a long time.
In step S2, the ambient temperature in the chamber is 310-390 ℃.
Compared with the preset temperature, when the ambient temperature in the chamber is 310-390 ℃, the removal effect and the removal efficiency of the residual photoresist 2 in the step S2 can be optimized, and in combination with the pulsed introduction of the hydrogen-containing gas, even if the photoresist 2 removal process in the step S2 is in a high-temperature environment, the substrate 1 is not easily damaged due to the shortened introduction time of the hydrogen-containing gas.
As shown in fig. 4, the present embodiment further provides a semiconductor manufacturing process, which includes the photoresist removing process, and includes the following steps after step S2:
and step S3: the substrate 1 from which the residual photoresist 2 has been removed is coated in a chamber.
The semiconductor manufacturing process provided by the embodiment includes the photoresist removing process, so that the semiconductor manufacturing process provided by the embodiment and the photoresist removing process can solve the same technical problem and achieve the same technical effect. In addition, in the semiconductor manufacturing process provided by this embodiment, the step of plating the film on the substrate 1 may be integrated into the chamber used in step S2 in the first embodiment, so as to further improve the manufacturing efficiency of the semiconductor.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; while the invention has been described in detail and with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present invention.
Claims (10)
1. A photoresist removal process, comprising:
s1: stripping the photoresist (2) on the substrate (1) to obtain the substrate (1) attached with residual photoresist;
s2: and putting the substrate (1) attached with the residual photoresist into a chamber, adjusting the ambient temperature in the chamber to be more than or equal to a preset temperature, continuously introducing inert gas into the chamber, and simultaneously introducing hydrogen-containing gas into the chamber at intervals of a first time so as to remove the residual photoresist (2) on the substrate (1).
2. The photoresist removing process according to claim 1, wherein in step S2, the cumulative time of the hydrogen-containing gas introduced into the chamber for a plurality of times is equal to half of the total time of the inert gas continuously introduced.
3. The photoresist removal process of claim 2, wherein in step S2, the duration of each time the hydrogen-containing gas is introduced into the chamber is a second duration, and the second duration is equal to the first duration.
4. The photoresist removal process of claim 3, wherein the first duration and the second duration are each 8-12s.
5. The process of claim 3, wherein in step S2, after the hydrogen-containing gas is introduced into the chamber for the second duration, the hydrogen-containing gas is introduced into the chamber at intervals of the first duration.
6. The resist removing process according to any one of claims 1 to 5, wherein in step S2, the amount of the hydrogen-containing gas introduced is decreased in sequence.
7. The process of claim 6, wherein during two consecutive passes of the hydrogen-containing gas, the amount of the hydrogen-containing gas introduced next time is reduced by 8-12% of the amount of the hydrogen-containing gas introduced last time.
8. The photoresist removal process according to any one of claims 1 to 5, wherein in step S2, the inert gas is continuously supplied for a total time of 2 to 5min.
9. The photoresist removal process of any one of claims 1 to 5, wherein in step S2, the ambient temperature within the chamber is 310 to 390 ℃.
10. A semiconductor manufacturing process comprising the resist removal process of any one of claims 1 to 9, and comprising, after step S2:
s3: and coating the substrate (1) with the residual photoresist (2) removed in the chamber.
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Citations (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5200031A (en) * | 1991-08-26 | 1993-04-06 | Applied Materials, Inc. | Method for removal of photoresist over metal which also removes or inactivates corrosion-forming materials remaining from one or more previous metal etch steps |
| WO1997011482A2 (en) * | 1995-09-05 | 1997-03-27 | Lsi Logic Corporation | Removal of halogens and photoresist from wafers |
| EP1143498A2 (en) * | 2000-04-02 | 2001-10-10 | Axcelis Technologies, Inc. | Post etch photoresist and residue removal process |
| US6673721B1 (en) * | 2001-07-02 | 2004-01-06 | Lsi Logic Corporation | Process for removal of photoresist mask used for making vias in low k carbon-doped silicon oxide dielectric material, and for removal of etch residues from formation of vias and removal of photoresist mask |
| WO2004107418A1 (en) * | 2003-05-30 | 2004-12-09 | Psk, Inc. | Method for removing photoresist in semiconductor manufacturing process |
| TW200532766A (en) * | 2004-03-16 | 2005-10-01 | Semiconductor Leading Edge Tec | Method of removing resist, semiconductor device manufactured by the method |
| US7202176B1 (en) * | 2004-12-13 | 2007-04-10 | Novellus Systems, Inc. | Enhanced stripping of low-k films using downstream gas mixing |
| CN101025578A (en) * | 2005-09-08 | 2007-08-29 | 兰姆研究公司 | A gas mixture for removing photoresist and post etch residue and use thereof |
| JP2008091667A (en) * | 2006-10-03 | 2008-04-17 | Hitachi Kokusai Electric Inc | Method of treating substrate |
| US8129281B1 (en) * | 2005-05-12 | 2012-03-06 | Novellus Systems, Inc. | Plasma based photoresist removal system for cleaning post ash residue |
| CN102386088A (en) * | 2010-09-03 | 2012-03-21 | 中芯国际集成电路制造(上海)有限公司 | Method for removing photoinduced resist layer on semiconductor device structure |
| CN102652351A (en) * | 2009-12-11 | 2012-08-29 | 诺发系统有限公司 | Enhanced passivation process to protect silicon prior to high dose implant strip |
| CN103137440A (en) * | 2011-11-21 | 2013-06-05 | 中芯国际集成电路制造(上海)有限公司 | Photoresist removing method |
| CN105824202A (en) * | 2016-05-11 | 2016-08-03 | 上海华虹宏力半导体制造有限公司 | Photoresist removal method and semiconductor device manufacturing method |
| CN111308867A (en) * | 2020-02-25 | 2020-06-19 | 上海华力集成电路制造有限公司 | Photoresist stripping and removing method |
| CN111722479A (en) * | 2020-06-23 | 2020-09-29 | 北京北方华创微电子装备有限公司 | Photoresist stripping method |
| CN112736026A (en) * | 2021-01-12 | 2021-04-30 | 度亘激光技术（苏州）有限公司 | Semiconductor structure forming method and semiconductor structure |
| CN112992659A (en) * | 2021-04-26 | 2021-06-18 | 度亘激光技术（苏州）有限公司 | Preparation method of semiconductor structure and semiconductor structure |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6777344B2 (en) * | 2001-02-12 | 2004-08-17 | Lam Research Corporation | Post-etch photoresist strip with O2 and NH3 for organosilicate glass low-K dielectric etch applications |
| US6849559B2 (en) * | 2002-04-16 | 2005-02-01 | Tokyo Electron Limited | Method for removing photoresist and etch residues |
| US7799685B2 (en) * | 2003-10-13 | 2010-09-21 | Mattson Technology, Inc. | System and method for removal of photoresist in transistor fabrication for integrated circuit manufacturing |
| US7915115B2 (en) * | 2008-06-03 | 2011-03-29 | International Business Machines Corporation | Method for forming dual high-k metal gate using photoresist mask and structures thereof |
| JP2010177262A (en) * | 2009-01-27 | 2010-08-12 | Panasonic Corp | Method of manufacturing semiconductor device |
| US8252515B2 (en) * | 2009-10-13 | 2012-08-28 | United Microelectronics Corp. | Method for removing photoresist |
| KR102192281B1 (en) * | 2012-07-16 | 2020-12-18 | 베이징 이타운 세미컨덕터 테크놀로지 컴퍼니 리미티드 | Method for high aspect ratio photoresist removal in pure reducing plasma |
-
2022
- 2022-04-19 CN CN202210412459.7A patent/CN114823297B/en active Active
Patent Citations (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5200031A (en) * | 1991-08-26 | 1993-04-06 | Applied Materials, Inc. | Method for removal of photoresist over metal which also removes or inactivates corrosion-forming materials remaining from one or more previous metal etch steps |
| WO1997011482A2 (en) * | 1995-09-05 | 1997-03-27 | Lsi Logic Corporation | Removal of halogens and photoresist from wafers |
| EP1143498A2 (en) * | 2000-04-02 | 2001-10-10 | Axcelis Technologies, Inc. | Post etch photoresist and residue removal process |
| US6673721B1 (en) * | 2001-07-02 | 2004-01-06 | Lsi Logic Corporation | Process for removal of photoresist mask used for making vias in low k carbon-doped silicon oxide dielectric material, and for removal of etch residues from formation of vias and removal of photoresist mask |
| WO2004107418A1 (en) * | 2003-05-30 | 2004-12-09 | Psk, Inc. | Method for removing photoresist in semiconductor manufacturing process |
| TW200532766A (en) * | 2004-03-16 | 2005-10-01 | Semiconductor Leading Edge Tec | Method of removing resist, semiconductor device manufactured by the method |
| US7202176B1 (en) * | 2004-12-13 | 2007-04-10 | Novellus Systems, Inc. | Enhanced stripping of low-k films using downstream gas mixing |
| US8129281B1 (en) * | 2005-05-12 | 2012-03-06 | Novellus Systems, Inc. | Plasma based photoresist removal system for cleaning post ash residue |
| CN101025578A (en) * | 2005-09-08 | 2007-08-29 | 兰姆研究公司 | A gas mixture for removing photoresist and post etch residue and use thereof |
| JP2008091667A (en) * | 2006-10-03 | 2008-04-17 | Hitachi Kokusai Electric Inc | Method of treating substrate |
| CN102652351A (en) * | 2009-12-11 | 2012-08-29 | 诺发系统有限公司 | Enhanced passivation process to protect silicon prior to high dose implant strip |
| CN102386088A (en) * | 2010-09-03 | 2012-03-21 | 中芯国际集成电路制造(上海)有限公司 | Method for removing photoinduced resist layer on semiconductor device structure |
| CN103137440A (en) * | 2011-11-21 | 2013-06-05 | 中芯国际集成电路制造(上海)有限公司 | Photoresist removing method |
| CN105824202A (en) * | 2016-05-11 | 2016-08-03 | 上海华虹宏力半导体制造有限公司 | Photoresist removal method and semiconductor device manufacturing method |
| CN111308867A (en) * | 2020-02-25 | 2020-06-19 | 上海华力集成电路制造有限公司 | Photoresist stripping and removing method |
| CN111722479A (en) * | 2020-06-23 | 2020-09-29 | 北京北方华创微电子装备有限公司 | Photoresist stripping method |
| CN112736026A (en) * | 2021-01-12 | 2021-04-30 | 度亘激光技术（苏州）有限公司 | Semiconductor structure forming method and semiconductor structure |
| CN112992659A (en) * | 2021-04-26 | 2021-06-18 | 度亘激光技术（苏州）有限公司 | Preparation method of semiconductor structure and semiconductor structure |
Non-Patent Citations (1)
| Title |
|---|
| 集成电路后段光刻胶去除技术进展;彭洪修等;《集成电路应用》;20180703(第07期);正文全文 * |
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