TWI251265B - Method for removing photoresist in semiconductor manufacturing process - Google Patents

Abstract

The present invention discloses a method for removing photoresist in the semiconductor manufacturing process, which employs the plasma to form the mixture gas containing hydrogen (H2) for ashing process to remove the photoresist. Moreover, the method for removing photoresist in semiconductor manufacturing process not only employs the plasma to form the mixture gas containing hydrogen for ashing process to remove the photoresist, but also eliminates the forming of SiO2 film to reduce the silicon consumption, and avoids the occurrence of popping. The present invention cannot only thoroughly clear the residual dopant of DUV (deep ultra violet) photoresist with high dose implantation, but also improve the effect of ashing process.

Description

1251265 __Case No. 93115506 V. Description of invention (1)

[Technical field to which the invention pertains] j-fabrication is related to the removal of a photoresist in a semiconductor process, such as a square gas, a gas mixture containing hydrogen (u, a gas mixture, and a smoldering (Ashing) process to remove the photoresist. Prior art] One of the semiconductor processes is a small amount of light, and the process is formed by five stages, = (b Ph0t0 LUhograPhy) spin coating light i, 3 = segment is on the semiconductor substrate The upper stage is a stage of selectively exposing the above-mentioned light _ = into a photoresist layer; the second stage; the third stage is for Exposure step _ (Photoresist Pattern), on the earth plate, The stage of the photoresist pattern (Deve 1 op); fourth, the exposed photoresist layer is etched on the substrate portion of the photoresist layer (E t =· is again a half-guided stage that is not covered by the photoresist is removed in etching or planting ^ Lng) or the stage of implanting impurities; the ashing process of the first case. The photoresist pattern used for the mask in the impurity stage is in the process of forming the metal wiring layer by the semiconductor manufacturing described above, and after the end of the 'ashing stage, the line enters the line. And the door to the wafer and the outside world The components on the bonded wafer are assigned to the film. The gold which acts as a bond pad is a process in which the ash is to be etched to remove the useless photoresist, or on the underlying substrate of the etched photoresist. A photoresist is a new pattern or a substance that acts as a mask when ions are used. In the above ashing process, γ is used after the end of the plasma implantation process. The exposed portion of the optical substrate is implanted.

Handle body, and reaction gas

Page 5 1251265 _ Case No. 93115506_, Year a Correct _ V. Invention Description (2) is oxygen (0 2 > Therefore, the photoresist removal process is an oxidation process that allows photoresist and oxygen to react, oxidation is a kind The burning process, therefore, can be referred to as the Ashing process. As mentioned above, we refer to the equipment required in the ashing process as Asher. In recent years, with semiconductor manufacturing technology The device is required to be highly integrated and fast, and the wafer technology is also becoming more and more detailed. With the meticulous technology of the wafer, the main component of the wafer is entangled, which is gradually consumed when it passes through multiple processes, which poses a problem.

Particularly when oxygen is used to form a plasma in the ashing process, part of the surface of the wafer acts with oxygen in the above technique to form an oxide film. As described above, when the oxide film layer is formed on the surface of the crucible, it is necessary to manufacture not only an element which is a shallow junction technique (S ha 1 1 〇wjuncti ο η) but also a doped polycrystal as an electrode (d 〇 Ped ρ ο 1 y - si 1 ic ο η) A lot of consumption also caused problems. In the current photoresist ashing process, a high-dose ion implantation (High Dose Implantation) is likely to occur after the wafer is implanted. In order to reduce the occurrence of the above-mentioned burst phenomenon, the process temperature is set to a low temperature, or at the end of the south agent S: ion After the High Dose Implantation process, the pin-up is performed, but the burst problem cannot be completely solved.

On the highly integrated germanium, since the wavelength of the G line (G-1 ine) having a wavelength of 43 6 nm and the I line (1-1 ine) having a wavelength of 36 5 nm is too long, the substrate can be too large to be defined. For further precision work, it is recommended to use DUV and X-rays with high doses of ions at wavelengths of 248 nm or 193 nm.彳' Due to the existing I-line (I - 1 ine) photoresist process, there is a large molecular number of 1251225. Case No. 93115506 _η 曰 Amendment 5, invention description (3), high viscosity, use high implantation on high-integration Dionic (Deep Ultra Violet) photoresist, instead of I-line (1-1 ine) photoresist. However, the above-mentioned DUV photoresist remnant technique implanted with high-dose ions cannot completely remove residual substances by using the ashing process with oxygen. SUMMARY OF THE INVENTION The main object of the present invention is to provide a method for removing photoresist in a semiconductor process, which uses a plasma to form a mixed gas containing hydrogen gas (Η 0, and performs an ashing process to remove photoresist). Another object is to provide a method for removing photoresist in a semiconductor process to reduce the formation of a tantalum oxide film, reduce the amount of ruthenium, avoid bursting, and completely remove residual materials of DUV photoresist implanted with high dose ions. It is still another object of the present invention to provide a method for removing photoresist in a semiconductor process, thereby improving the efficiency of the ashing process. To achieve the above object, the present invention is applied to an ashing process for removing photoresist on a semiconductor member. The plasma forms a mixed gas containing hydrogen (Η 2). The present invention is applicable to all photoresist ashing processes, especially for the high-dose Ion Implantation, which is very effective for reviewing the high-dose Ion Implantation. Members have further understanding and understanding of the structure, characteristics and effects of the present invention. The embodiment described in detail with FIG Friends, as described later: [Embodiment The present invention is a method of removing the photoresist as the semiconductor manufacturing process, characterized in

Page 7 1251265

It consists of five stages, that is, the first stage is the stage of spin coating on the semiconductor substrate to form the photoresist layer; the second stage is the exposure phase of the selective exposure photoresist layer; the third stage In order to form a photoresist pattern, the exposed photoresist layer is developed (Deve 1 op); the fourth stage is to etch the semiconductor substrate portion not covered by the photoresist or implant impurities. The fifth stage is to remove the ashing process for the photoresist pattern used for the mask during the etching or implanting impurity stage; and the ashing process is to form a hydrogen-containing (Η 2 > mixed gas by using a plasma, Preventing the occurrence of cracking at high temperatures and removing the photoresist pattern in the state of suppressing the generation of particles, thereby solving the above problem. 0 As described above, when the mixed gas containing hydrogen is formed by plasma, the oxidation is minimized. Membrane generation and reduction of consumption. The present invention is a method for removing photoresist in a semiconductor process, which is characterized by a high dose ion implantation (High Dose ion Implantation) mode. The above-described problem is solved by the above-described semiconductor substrate. The present invention is a method for removing photoresist in a semiconductor process, characterized in that the photoresist contains deep ultraviolet rays (DUV) to solve the above problems. A method for removing photoresist, characterized in that the hydrogen (Η 2) is mixed with nitrogen (N 2 ) or helium (He) to form another mixed gas, thereby solving the above problems. ~ The present invention as a method for removing photoresist in a semiconductor process , which is characterized by the above hydrogen (Η Ο Ο 2% to 1 〇〇% (volume percentage) of the total amount of gas, you

Page 8 1251265 Case No. 93115506 Λ _ 曰 Amendment V. Invention Note (5) to solve the above problems. The invention is a method for removing photoresist, characterized in that the ashing process temperature is in the range of 100 ° C to 200 ° C, thereby solving the above problems. Another embodiment of the present invention is a method for removing photoresist in a semiconductor process characterized by five stages, that is, a first stage is a step of spin coating a photoresist on a semiconductor substrate to form a photoresist layer; the second stage is Selective exposure to the exposure phase of the photoresist layer; the third phase is to form a photoresist pattern to develop the exposed photoresist layer (D e ve 1 οp); the fourth phase is to be not exposed to the above light Blocking the covered semiconductor substrate portion for etching: Etching) or implanting impurities; the fifth stage is to remove the ashing process for the photoresist pattern used for the mask during the etching or implanting impurity stage; The process is to use a plasma to form a mixed gas containing ruthenium or ruthenium (NH a) to prevent the occurrence of a burst at a high temperature, and to remove the photoresist pattern in a state where the generation of particles is suppressed, thereby solving the above problem. The drawings and related embodiments are described in detail. Table 1 is a summary table for the entire embodiment. [Table 1]

Page 9 1251265 Case No. 93115506 Λ_ 修正 Correction Straight, invention description (6)

No. 02 n2 h2n2 Process (( (temperature seem seem seem re ) :)! i ) ) : Oxidation film concentration during the process: (seconds) (A) TE Μ Photo 00 70 80 2 75 7 ο 00 8 50 28 2 The following is a brief description of Table 1 below: Process Α is at a process temperature of 250 ° C, which is 7 〇〇〇 sccm of oxygen and 80 seem of nitrogen in the ashing process of the conventional process. After the ashing was performed for 75 seconds, the thickness of the oxide film was measured by a transmission electron microscope, and the result was 1 7 A as shown in Fig. 1. Process B is an embodiment of the present invention, and the oxidized film thickness is measured by a transmission electron microscope after ashing the H2N2 gas of 800 seeming at 205 ° C for 285 seconds.

Page 10 1251265 93iiRFinfi Correction 曰 V. Inventive Note (?) - Degree ς The result is as shown in Figure 2, and its thickness is unmeasurable. -2 JB in | Table 1 ° 1 process room (process chamber) window observation according to the process of the second square, the result is the conventional technology process that is process A

{jj J a, prostitute; clothing phenomenon, but in the embodiment of the invention, that is, the process using hydrogen gas bursts. 'Table 2】 Process c Pressure (Torr 〇2 h2n2 scan degree °c Interval ΠΟΟΟ I 1900 150 裎 D , 150 8000 Ϊ Ϊ Table 2 is the use of DUV (implanted high dose ion) photoresist chip After the technology, check the residue. Parts such as 2 ^ C is the process of removing the existing photoresist from the conventional technology 'The above process bar' cj / shown 'pressure is 2 Torr, oxygen is 1 700 0.02 cm, nitrogen The process temperature is /50 and the process time is 150 seconds. 2 If 'If ^ is the process for removing photoresist in the present invention', the above process conditions are as shown, and the process is w2^ oxygen is 8 0 0 0 sccm, Η A is 8 0 0 0 According to the upper f-degree is 15 0 °c, the process time is 150 seconds. More than ^, as a condition to remove the photoresist', the result is left after the end of process C In other words, in the process of the hydrogen-based process, the use of 1,251,265 Other gases, such as the nitrogen (N 0 , 氦 (He) mixture shown in Table 2 above, can remove the photoresist residue completely when removing the photoresist; or use ammonia When the hydrogen compound is removed from the photoresist, the residue can be completely removed. In addition, in the process of the present invention, when the response (process temperature) is set to 1 0 0 to 2 0 ° C, the residual substance can be completely removed. The effect of the present invention is used in the photoresist ashing process as described above.

Page 12 1251265 _ Case No. 93115506_年月日日_Amendment, _ V. Inventive Note (9) Process, as shown in the results of the examples, no oxide film will be formed, so there is no need to fabricate components that need to be shallow after fabrication. It also prevents a large amount of doped poly-silicon loss due to the action of the electrodes. On the ashing process for removing photoresist after implantation of high-dose Ion Implantation, the method of the present invention does not cause bursting even at a process temperature of above 200 ° C, and can be suppressed. The generation of particles can enhance the manufacturing capacity of semiconductors. The DUV photoresist implanted with high dose ions can be completely removed by using the hydrogen-based compound of the present invention or the mixture at a low temperature in a highly integrated DUV-removing photoresist process which must be used for high-input ions. Residual

The above is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention, so that the shapes, structures, features, and spirits described in the claims of the present invention are equally varied and modified. All should be included in the scope of the patent application of the present invention.

Page 13 1251265 Case No. 93115506 Λ_η 曰 Correction Brief description of the drawing Fig. 1 is a photograph taken by a transmission electron microscope with a conventional technique. Fig. 2 is a photograph taken by a transmission electron microscope of the process of the present invention. _ i^· Page 14

Claims (1)

1251265 Case No. 93115506 Λ _ 曰 Amendment VI, Patent Application Scope 1 · A semiconductor process consists of a five-coat spin-coating resistor to form a photoresist pattern exposed to the exposed photoresist pattern; the fourth-order substrate portion is etched The fifth stage is to form a photoresist pattern with a photoresist pattern that contains a burst phenomenon and a photoresist pattern. 2) A method as claimed in the scope of the patent, wherein the method of applying the patent range, such as the method of the patent application, wherein the photoresist of the Violet) is as described in the patent application, wherein, and (He); The method for removing photoresist in the range of 2%~1 0 0% of the total amount of photoresist removed in the patent-pending process, the method is in the semi-conducting stage, the first stage is the stage of the photoresist layer on the semiconductor substrate; The stage is a selective exposure phase; the third stage is to develop the exposed photoresist layer (De ve 1 οp) to the semiconductor engraving or implanting impurities not covered by the photoresist The stage of ashing used in addition to the etching or implantation of the impurity stage described above; wherein the ashing stage utilizes a mixed gas of hydrogen (防止 , , , , , , , , , 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第The photoresist removal semiconductor substrate in the semiconductor process described in the above is fabricated by a high-dose ion implantation (Implantation) mode. The photoresist removal process in the semiconductor process described in Item 1 contains deep ultraviolet rays (D). Eep U 11 rao The semiconductor process described in item 1 removes a gas of nitrogen (N 2 ) which is a gas system mixed with hydrogen (Η 2). The semiconductor described in items 1, 2, 3 or 4. The method wherein the hydrogen (the amount of Η 0 accounts for gas (volume percent). Page 15 1251265 Case No. 93115506 修正 Amendment 6. Patent application scope 3. If the patent application procedure removes light 200 〇C. 7 · A semiconductor system is spin-coated to expose the shape of the step substrate; the first mask is separated by a photoresist in the 8 9 10 process, the photoresist layer is a photoresist segment; the first part is a five-stage photoresist sub-shape The state of the anti-generation is as in the patent application method, the Dose ion as the patent application method, the V i ο 1 et), such as the application for the removal of photoresist nitrogen (, range 1, 2, 3 or 4) The method for semiconductor resistance, wherein the ashing process temperature is 100 ° C ~ the method of removing photoresist in the process, the method is in five stages of semi-conducting, the first stage is to form light on the semiconductor substrate The stage of the resist layer; the second stage is a selective exposure stage; the third stage is a pattern, and the exposed photoresist layer is developed (Develop). The four stages are semiconductor lines not covered by the above-mentioned photoresist. The stage of etching or implanting impurities is to remove the ashing process for patterning during the etching or implanting impurity stage described above; wherein the ashing process utilizes hydrogen-containing (Ηθ mixed gas or ammonia (NHa) Suspension at high temperatures The film bursts and the photoresist pattern is removed under the suppression of the particles. The semiconductor substrate in the semiconductor process described in the scope of the seventh item is fabricated by high-dose ion implantation (H i gh Implantation) mode. The photoresist in the semiconductor process described in item 7 is a deep ultraviolet ray (D eep U 11 ra photoresist). The method in the semiconductor process described in claim 7 wherein the hydrogen gas (H z a gas of the mixed gas system He (He). Page 16 1251265 _ Case No. 93115506_年月日日__ VI. Patent Application No. 11 · A method for removing photoresist in a semiconductor process as described in claim 7, 8, 9, or 10, wherein the hydrogen (Η Ο 占 占 2 2 2 2 2 2 1 1 1 1 1 1 1 1 1 1 1 1 1 1 · · · · · · · · · · · · · · · · · · · 如 · · 如 如 如 如 如 如The ashing process temperature is from 10 ° C to 2 0 0 〇 C. Page 17