CN100338763C - 半导体模块及其制造方法 - Google Patents

半导体模块及其制造方法 Download PDF

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CN100338763C
CN100338763C CNB021570825A CN02157082A CN100338763C CN 100338763 C CN100338763 C CN 100338763C CN B021570825 A CNB021570825 A CN B021570825A CN 02157082 A CN02157082 A CN 02157082A CN 100338763 C CN100338763 C CN 100338763C
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insulating barrier
base members
contact
semiconductor module
metalized
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CN1428850A (zh
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W·克纳普
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ABB Research Ltd Switzerland
ABB Research Ltd Sweden
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Abstract

半导体模块包括一个基底元件(1)和一个两面金属化的绝缘元件(2)，该绝缘元件用其两个金属化表面的一个金属化表面平放在该基底元件上，以及包括至少一个布置在两个金属化表面的另一个金属化表面上的半导体元件(6)。在绝缘元件(2)的边缘区内，设置了一层电绝缘层(51)，该绝缘层的表面与第二个金属化表面形成一个共同的平面。通过整个金属化的绝缘元件的平面埋入而达到的金属化的边缘和棱角的倒圆改善了临界电场区域内的半导体模块的绝缘性能。此外，由于布置在一个平面内而可实现简例而又经济的制造。

Description

半导体模块及其制造方法
技术领域
本发明涉及电力电子学的领域。本发明涉及一种半导体模块以及一种半导体模块的制造方法。
背景技术
这种半导体模块例如可从R.Zehringer等人发表在《MaterialResearch Society Symposium Proceedings》(483卷1998年第369-380页)上的题为“Power Semiconductor Materials andDevices”的论文中得知，该文描述了这样一种半导体模块，它包括一个模块外壳、一块金属基板和多个布置在该基板上的、用模块外壳覆盖的半导体元件，在这种情况中，指的是IGBT-芯片(绝缘栅双晶体管芯片)和二极管。模块外壳一般用一种硅胶填料填充，这种填料作为绝缘层和作为防腐用以及减少作用在连接金属线上的拉力。基板与冷却水连接，以便散去半导体元件产生的热。在基板上布置了一个涂敷金属的陶瓷板形式的衬底。该陶瓷板在半导体元件和基板或水冷之间形成电绝缘并具有良好的导热性能，以便把半导体元件的热导散到基板。该基板、陶瓷板和半导体元件依序上下焊接，其中陶瓷板的金属层可进行钎焊连接。
良好的导热性和不良的导电性在今天已可组合在某些材料中，所以例如用氮化铝(AlN)制造具有良好电绝缘性的相当薄而导体性好的绝缘元件不存在任何困难。从理论上讲，1.5-2毫米的厚度时可绝缘20千伏。
边缘效应，特别是金属层的边缘和棱角引起的边缘效应对半导体模块的介电强度产生不利的影响，特别是超过1.2千伏的大功率半导体模块尤其如此。金属层的边缘和棱角具有不均匀的、增强的电场。这种过程电场导致局部放电并限制整个结构的介电强度。边缘上的场强与电压之比至少是平方关系，所以为了避免这种局部放电，势必需要很厚的电绝缘层。在凝胶填料灌入模块外壳中时，正好可能在这些边缘区域产生小气泡，这些小气泡有利于局部放电并对半导体模块的功能构成一个附加的危险因素。
为了解决绝缘问题，人们提出了不同的解决方案。例如DE 199 59248提出把场临界区域做成空隙，这些空隙用凝胶填料填充并由此构成一个附加的界面来阻止放电的扩大。EP 1 041 626建议在衬底内通过三维倒棱来降低这些临界区的场强。这两种解决方案对制造都是繁复而又昂贵的。
发明内容
所以，本发明的目的在于提出一种上述的那类半导体模块，这种半导体模块具有改善的介电强度而且制造简便。此外，本发明的目的是提出一种简便而可靠的方法来制造这种半导体模块。
这个目的是通过如下所述的一种半导体模块以及半导体模块的制造方法来实现的。
本发明的半导体模块包括：一个基底元件；至少一个绝缘元件，该绝缘元件用其两个对应表面上设置的两个金属化表面中的第一金属化表面平放在该基底元件上；至少一个布置在两个金属化表面中的第二金属化表面上的半导体元件，其特征是，在绝缘元件的外边缘区设置了一层电绝缘层，且该绝缘层的表面与第二金属化表面形成一个共同的平的表面。
通过整个金属化的绝缘元件的平面埋入而达到的金属化的边缘和棱角的倒棱改善了临界电场区域内的半导体模块的绝缘性能。与一般用硅胶填充的半导体模块比较，电绝缘获得了明显的改善，而同时保留了扁平金属化绝缘元件的诸多优点，特别是良好导热性以及低的制造成本。
为了半导体元件的接通，在绝缘层中埋入了接触元件，这些接触元件通过绝缘层既与第二金属化表面又与基底元件进行电绝缘。这些接触元件具有接触面，而这些接触面则与绝缘层的表面和第二金属化表面形成一个共同的平的表面。
半导体模块的全部其他主要零部件都形成一个共同的平的表面，这样就简化了半导体元件的处理和安装。
在本发明半导体模块的第二实施例中，在基底元件内设置了一个布置绝缘元件的凹槽。该绝缘元件的第二个金属化表面与该基底元件是电绝缘的。该绝缘元件的表面、第二个金属化表面和基底元件的表面形成一个共同的平的表面。
在这个实施例中，半导体元件或其他电子元件既可相互绝缘地布置在第二金属化表面上又可布置在该基底元件上。特别是在所谓的压制封装模块中，两侧可接触的半导体元件通过一个端面接触接通并用压力作用，从而获得有利的可能性，例如可把两个并排布置的半导体元件进行电串联，而无需相应端面接触的几何形状的匹配。
在压制封装模块时，通过绝缘元件和绝缘层的第二金属化的共同表面而可节省一道制造工序。因为作为绝缘元件优先使用的常规标准衬底在用于压制封装模块时不能满足扁平度的要求，所以常规标准衬底必须进行机械加工例如铣削。在制造本发明的半导体模块时，精铣可与铣掉绝缘层和处理接触面结合起来并可在一道工序中进行。
在制造半导体模块的本发明方法中，至少一个绝缘元件用其两个对应表面上设置的两个金属化表面中的第一金属化表面固定在一个基底元件上或固定在该基底元件的一个表面凹槽中。半导体元件固定在两个金属化表面中的第二个金属化表面上和/或固定在该基底元件的表面上，如果该绝缘元件布置在一个凹槽中的话。半导体元件的主引线和/或控制引线与金属连接线或别的导电体接通并与接触元件的接触面连接。
本发明的制造半导体模块的方法的特征是，在固定半导体元件之前，将该基底元件和该至少一个绝缘元件与接触元件一起放入一个铸模中。通过用一种电绝缘材料填充没有被基底元件、绝级元件或接触元件占据的铸模体积来形成一层绝缘层，接着绝缘层固化，将固化了的绝缘层去掉一些材料，使绝缘层的表面与两个金属化的第二个表面、与接触元件的接触面以及与基底元件的表面—如果该绝缘元件布置在一个凹槽中的话—形成一个共同的平表面；在半导体元件固定后，将接触元件的活动接触垂直于绝缘层的表面向上弯起。
在半导体元件固定之前，设置绝缘层并将其相应地磨平到一个共同的表面；在半导体元件在一个复杂的和花费大的工艺步骤中进行固定和接通之前，测试整个半导体模块的电绝缘强度，这样就可明显减少绝缘有缺陷的半导体模块。
在本发明方法的一个有利的附加步骤中，铸模在用电绝缘材料填充之前至少进行部分地抽真空，从而改善绝缘层的结构，特别是可避免导致放电的气泡的形成。
附图说明
下面结合附图的一些有利实施例来详细说明本发明，附图表示：
图1在模块放入铸模中形成一层绝缘层之前，本发明半导体模块的第一实施例的简化断面图；
图2在铸模中形成绝缘层时图1的半导体模块；
图3已形成绝缘层的图2所示半导体模块；
图4准备好安装的图3所示半导体模块；
图5本发明半导体模块第二实施例的简化断面图。
在所有附图中，凡是作用相同的部分都用相同的标号表示。
具体实施方式
下面结合表示本发明半导体模块的第一实施例的图1至4来说明本发明的制造方法。
第一步是在一个基底元件1上固定一个绝缘元件2，这个绝缘元件最好是一个两面金属化的衬底，该衬底例如包括一用铜或铝金属化的AlO3或AlN陶瓷板。基底元件的材料例如为Mo、AlSiC或铝石墨或铜石墨，且其热膨胀最好与绝缘元件的材料热膨胀匹配。绝缘元件2与第一金属化表面21例如用钎焊或所谓的低温焊接直接固定在该基底元件上。第二金属化表面22可包括多个相互电绝缘的区域。
在基底元件1为此设置的凹槽中安装用来接通半导体元件的接触元件3。为此，基底元件1、绝缘元件2和接通元件3放在一个盆形的铸模41中，如图1所示。接触元件3通过相应的导向元件相对于基底元件定位并对准。铸模41用第二铸模部分42关闭。
紧接着在图2中，通过该铸模的注入孔43把一种电绝缘材料51注入铸模内部的空腔44中(如箭头所示)。空腔44相当于没有被基底元件1、绝缘元件2和接触元件3填充的铸模的内部体积。但空腔44主要在接触元件3和基底元件1之间的区域延伸。按这种方式产生的电绝缘层51的材料最好为一种流动性好的塑料，这种塑料容易固化并在固化状态下可短时间加热到超过220℃而不产生大的变形。这点对那些半导体元件焊在绝缘元件的金属化涂层的半导体模块来说，是特别重要的。此外，这种塑料的热膨胀系数应与邻接的材料的热膨胀系数相当。合适的树脂例如是商品名称为Stycast或Aratherm的环氧树脂。这类树脂具有的击穿电压大致与常规半导体模块所用的硅胶相当，但具有明显改善的粘力和相应降低电场的较高介电常数。在没有焊接的半导体元件的半导体模块例如压制封装模块时，也可用廉价的材料例如可浇注的聚氨脂，这种材料可大量用于内部绝缘。对于机械刚度要求不高的使用场合也可用硅橡胶。硅橡胶可耐受高得多的温度并特别是在与所谓的底胶结合时可极好地粘附在绝大多数材料上。为了降低热膨胀系数和提高导热率，可在绝缘层的材料的浇注树脂中添加到大于50％的填料。
为了便于实施浇注过程，特别是为了保证绝缘层51的均匀性，铸模在浇注之前最好抽真空。这样就可通过孔43或特意为此设置的孔从铸模内部抽出空气。通过在真空下处理可防止绝缘层51内部的气泡形成。气泡可导致放电。
在浇注过程结束后，半导体模块从铸模中取出。此时绝缘层51已硬化到可进行机械加工的程序。在一道工序中，例如通过磨削把绝缘层51磨到与第二金属化表面22具有共同的平面。接触元件3的接触面31也位于这个平面内。凡是要固定半导体元件的一根金属线或一个电极的表面，特别是接触面31以及第二金属化表面22都必须相应进行预处理。
从绝缘层51去掉特别是在浇注时不可避免产生的浇注表层，该表层在工件和铸模之间含有渗入的浇注料且是很薄的，例如几微米，视工件的压紧力和表面状态而定。由于接触面31、第二金属化表面32以及绝缘层51的表面加工成一个平面可共同用一种刀具并在一道工序中完成，因而可明显降低加工费用。
紧接着通过绝对平的工作表面以简单的方式进行表面修改，例如最终加工或接触面31的防腐处理。
平的工作表面对图3所示的下一道工序即把半导体元件6装到第二金属化表面22上也是有利的。半导体元件6例如焊接到该金属化表面或用低温连接固定其上。
然后这些半导体元件进行互连并与执着触面31电连接，例如用简单的接通导线7进行连接。
接着对迄今为止基本上平面成型的接触元件3这样进行弯曲，使接触段32垂直于绝缘层51的表面向上凸起。接触元件3相应准备了一个给定弯曲点，这个弯曲点把接触面31的区域与连接段32隔开。接触元件3用金属板制成且其尺寸和厚度与要通过的电流匹配。从图中可清楚看出，该接触元件包括一个在上段下面折叠的下段。该上段包括接触面31和接触段32。由于只有上段位于电流电路上，所以下段作为场屏蔽使用。接触元件尤其是下段的棱角和边缘最好倒圆，以避免场强过高。下段和上段是机械分开的，折叠段没有机械应力，机械应力对绝缘层或其绝缘性能产生不利影响。所以即使在接触段32升起时也不损害这个对介质要求严格的区段。如果接触元件用金属板、例如用镀银的铜板冲压而成，则通过冲压可轻易达到倒圆的表面，这种倒圆的表面在具有外部倒圆的金属板相应布置在折叠区段时有助于降低电场。
接着半导体模块用一个外壳盖9封闭，如图4所示。外壳内部的空腔也象常规半导体模块那样，用硅胶52填充。
通过外壳盖9从半导体模块垂直凸起的接触段32用接通插头33接通。
为了制造图5所示第二实施例的本发明半导体模块，可用本发明的同一种方法。
第一步将绝缘元件2放入基底元件1的一个凹槽中并固定在该基底元件上。
然后将基底元件1和绝缘元件2带或不带接触元件一起放入铸模中，并用电绝缘材料填充该基底元件和绝缘元件之间的相应空隙。
如图5所示，第二金属化22、基底元件1以及绝缘层51的表面位于一个共同的平面内。由于作为绝缘元件用的常规标准衬底不能满足用于压制封装模块的扁平度的要求，所以必须对这种常规标准衬底进行机械处理，例如铣削或磨削。由于在制造本发明半导体模块时制备一个共同的表面而可把精铣与绝缘层的铣削结合起来并可在一道工序中进行。除了便于上述半导体元件的安装外，这种布置方式还可使用统一的端面接触8，这些端面接触包括接触弹簧并保证在半导体元件6上作用足够大的压力。

Claims (12)

1.半导体模块，包括：
-一个基底元件(1)；
-至少一个绝缘元件(2)，该绝缘元件用其两个对应表面上设置的两个金属化表面中的第一金属化表面(21)平放到基底元件(1)上，
-至少一个布置在两个金属化表面中的第二金属化表面(22)上的半导体元件(6)，
其特征为：
-在绝缘元件(2)的外边缘区内，设置了一层电绝缘层(51)；
-绝缘层(51)的表面与第二金属化表面(22)形成一个共同的平面。
2.按权利要求1的半导体模块，其特征为：
-在绝缘层(51)中浇入至少一个接触元件(3)，以便接通至少一个半导体元件(6)，该接触元件(3)通过绝缘层(51)与金属化表面(21、22)和/或基底元件(1)电绝缘；
-接触元件(3)具有一个接触面(31)，该接触面与绝缘层(51)的表面和第二金属化表面(22)形成一个共同的平面。
3.按权利要求2的半导体模块，其特征为：
-接触元件(3)包括一个活动的接触段(32)；
-在预组装状态下，该接触段(32)的表面与绝缘层(51)的表面位于一个平面内；
-在装配状态下，该接触段(32)垂直于绝缘层(51)的表面。
4.按权利要求1至3任一项的半导体模块，其特征为：
-基底元件(1)具有一个凹槽；
-绝缘元件(2)布置在该凹槽中，第二金属化表面(22)通过绝缘层(51)与基底元件(1)电绝缘；
-绝缘层(51)的表面与第二金属化表面(22)和基底元件(1)的表面形成一个共同的平面。
5.按权利要求4的半导体模块，其特征为：
在基底元件(1)的表面上至少布置了一个半导体元件(6)。
6.按权利要求1至5任一项的半导体模块，其特征为：
绝缘层(51)用这样一种材料制成，该材料可在几秒钟内加热到超过200℃而不产生变形。
7.按权利要求6的半导体模块，其特征为：
所述材料可在5至10秒内加热到超过200℃而不产生变形。
8.按权利要求6的半导体模块，其特征为：
所述材料可在几秒钟内加热到超过220℃而不产生变形。
9.按权利要求8的半导体模块，其特征为：
所述材料可在5至10秒内加热到超过220℃而不产生变形。
10.制造半导体模块的方法，用下列工艺步骤：
-将至少一个绝缘元件(2)用其两个对应表面上设置的两个金属化表面中的第一金属化表面(21)固定在一个基底元件(1)上或固定在该基底元件(1)的一个表面凹槽中，
-将半导体元件(6)固定在两个金属化表面中的第二金属化表面(22)上，
-使半导体元件(6)的主引线和/或控制引线与金属连接线(7)或别的导电体接通，并与接触元件(3)的接触面(31)连接，
其特征为：在半导体元件(6)固定之前，
-将基底元件(1)和绝缘元件(2)与接触元件(3)一起放入一个铸模(41、42)中；
-通过用一种电绝缘材料来填充铸模(44)内的未被基底元件(1)、绝缘元件(2)或接触元件(3)所占据的空间来形成一层绝缘层(51)，
-绝缘层(51)硬化后，随即去掉绝缘层(51)的一些材料，使绝缘层(51)的表面与第二金属化表面(22)和接触元件(3)的接触面(31)形成一个共同的平面，
-在半导体元件(6)固定以后，使接触元件(3)的活动接触段(32)垂直于绝缘层(51)的表面向上弯起。
11.按权利要求10的方法，其特征为：
所述绝缘元件(2)设置在基底元件(1)的表面凹槽内，并且所述绝缘层(51)的表面与所述基底元件(1)表面形成一个共同的平面。
12.按权利要求10或11的方法，其特征为：
-在用电绝缘材料填充之前，铸模(41、42)至少部分地抽真空；
-该绝缘材料无气泡地和均匀地注入该铸模的自由空间中。
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