CL2015003277A1 - Método de nanomodulación de películas metálicas mediante pulverización catódica de metales en alto vacío y plantillas de al anodizado - Google Patents

Método de nanomodulación de películas metálicas mediante pulverización catódica de metales en alto vacío y plantillas de al anodizado

Info

Publication number
CL2015003277A1
CL2015003277A1 CL2015003277A CL2015003277A CL2015003277A1 CL 2015003277 A1 CL2015003277 A1 CL 2015003277A1 CL 2015003277 A CL2015003277 A CL 2015003277A CL 2015003277 A CL2015003277 A CL 2015003277A CL 2015003277 A1 CL2015003277 A1 CL 2015003277A1
Authority
CL
Chile
Prior art keywords
aluminum
metal
substrate
acid
nanovalles
Prior art date
Application number
CL2015003277A
Other languages
English (en)
Inventor
Juan Luis Palma
Juan Escrig Murua
Juliano Denardin
Original Assignee
Univ Santiago Chile
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Santiago Chile filed Critical Univ Santiago Chile
Priority to CL2015003277A priority Critical patent/CL2015003277A1/es
Publication of CL2015003277A1 publication Critical patent/CL2015003277A1/es
Priority to PCT/CL2016/050059 priority patent/WO2017079854A1/es
Priority to US15/774,482 priority patent/US20200248300A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0005—Separation of the coating from the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/021—Cleaning or etching treatments
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
    • C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
    • C25D11/02—Anodisation
    • C25D11/04—Anodisation of aluminium or alloys based thereon
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
    • C25D11/02—Anodisation
    • C25D11/04—Anodisation of aluminium or alloys based thereon
    • C25D11/06—Anodisation of aluminium or alloys based thereon characterised by the electrolytes used
    • C25D11/08—Anodisation of aluminium or alloys based thereon characterised by the electrolytes used containing inorganic acids
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
    • C25D11/02—Anodisation
    • C25D11/04—Anodisation of aluminium or alloys based thereon
    • C25D11/06—Anodisation of aluminium or alloys based thereon characterised by the electrolytes used
    • C25D11/10—Anodisation of aluminium or alloys based thereon characterised by the electrolytes used containing organic acids
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
    • C25D11/02—Anodisation
    • C25D11/04—Anodisation of aluminium or alloys based thereon
    • C25D11/18—After-treatment, e.g. pore-sealing
    • C25D11/24—Chemical after-treatment
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F3/00—Electrolytic etching or polishing
    • C25F3/02—Etching
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/26—Apparatus or processes specially adapted for the manufacture of record carriers
    • G11B7/266—Sputtering or spin-coating layers
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/12—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns
    • H05K3/1216—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns by screen printing or stencil printing
    • H05K3/1225—Screens or stencils; Holders therefor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S205/00—Electrolysis: processes, compositions used therein, and methods of preparing the compositions
    • Y10S205/917—Treatment of workpiece between coating steps

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Electrochemistry (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Thin Magnetic Films (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)

Abstract

MÉTODO PARA LA NANOMODULACIÓN DE SUPERFICIES METÁLICAS QUE COMPRENDE LAS SIGUIENTES ETAPAS: OBTENER UNA PLANTILLA DE ALUMINIO GRABADA CON NANOVALLES AL ANODIZAR UNA PELÍCULA DE ALUMINIO DE ALTA PUREZA QUE CONSTA DE UNA CAPA NATURAL DE ÓXIDO DE ALUMINIO MUY DELGADA SOBRE SU SUPERFICIE, HACER CRECER DICHA CAPA AL UTILIZAR UNA SOLUCIÓN ELECTROQUIMICA PARA DISOLVER PARCIALMENTE EL ÓXIDO DE ALUMINIO Y FORMAR UNA CAPA POROSA QUE SE SOSTIENE SOBRE EL ALUMINIO, LA QUE SE ELIMINA MEDIANTE UN ATAQUE QUÍMICO SELECTIVO CON UNA SOLUCIÓN ÁCIDA, PARA ASÍ OBTENER UN ALUMINIO CON AGUJEROS SEMICIRCULARES QUE ESTÁN ORDENADOS HEXAGONALMENTE, Y LUEGO OBTENER UN SUBSTRATO DE ALUMINIO METÁLICO QUE ESTÁ GRABADO CON NANOVALLES SEMICIRCULARES ORDENADOS HEXAGONALMENTE; DONDE DICHA SOLUCIÓN ELECTROLÍTICA SE SELECCIONA DE ÁCIDO SULFÚRICO, ÁCIDO OXÁLICO O ÁCIDO FOSFÓRICO, Y DICHA SOLUCIÓN ÁCIDA ES UNA MEZCLA DE ÁCIDO CRÓMICO, ÁCIDO FOSFÓRICO Y H20; NANOMODULAR UNA PELÍCULA METÁLICA USANDO EL SUBSTRATO DE ALUMINIO GRABADO CON NANOVALLES OBTENIDO EN LA ETAPA A), AL EVAPORAR SOBRE DICHO SUBSTRATO UN METAL SELECCIONADO DEL GRUPO CONSISTENTE DE AU, CU O AG PARA GENERAR UNA PELÍCULA METÁLICA QUE LUEGO SE DESPEGARA, Y DONDE LA EVAPORACIÓN DEL METAL QUE SE DEPOSITA, SE REALIZA MEDIANTE PULVERIZACIÓN CATÓDICA EN ALTO VACÍO, Y DONDE PARA ASEGURAR LA BAJA ADHERENCIA DEL METAL DEPOSITADO SOBRE EL ALUMINIO NANOESTRUCTURADO, SE UTILIZA UNA TASA DE DEPOSICIÓN MUY ALTA, ENTRE 59 Y 127 NM/MIN Y ADEMÁS SE UTILIZA UNA DISTANCIA DE APROXIMADAMENTE DE 5 CM ENTRE EL CAÑÓN Y EL SUBSTRATO; Y RETIRAR LA LÁMINA METÁLICA DEL SUBSTRATO.
CL2015003277A 2015-11-09 2015-11-09 Método de nanomodulación de películas metálicas mediante pulverización catódica de metales en alto vacío y plantillas de al anodizado CL2015003277A1 (es)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CL2015003277A CL2015003277A1 (es) 2015-11-09 2015-11-09 Método de nanomodulación de películas metálicas mediante pulverización catódica de metales en alto vacío y plantillas de al anodizado
PCT/CL2016/050059 WO2017079854A1 (es) 2015-11-09 2016-11-07 Método de nanomodulación de películas metálicas mediante pulverización catódica de metales en alto vacío y plantillas
US15/774,482 US20200248300A1 (en) 2015-11-09 2016-11-07 Method for nanomodulating metal films by means of high-vacuum cathode sputtering of metals and stencils

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CL2015003277A CL2015003277A1 (es) 2015-11-09 2015-11-09 Método de nanomodulación de películas metálicas mediante pulverización catódica de metales en alto vacío y plantillas de al anodizado

Publications (1)

Publication Number Publication Date
CL2015003277A1 true CL2015003277A1 (es) 2016-07-15

Family

ID=56610100

Family Applications (1)

Application Number Title Priority Date Filing Date
CL2015003277A CL2015003277A1 (es) 2015-11-09 2015-11-09 Método de nanomodulación de películas metálicas mediante pulverización catódica de metales en alto vacío y plantillas de al anodizado

Country Status (3)

Country Link
US (1) US20200248300A1 (es)
CL (1) CL2015003277A1 (es)
WO (1) WO2017079854A1 (es)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100468856B1 (ko) * 2002-11-18 2005-01-29 삼성전자주식회사 상변환물질막을 가지는 광기록매체 및 그 제조방법
CN103882393B (zh) * 2013-09-18 2016-08-03 云南大学 转印倒置模板法制备有序锗纳米点阵
TW201606306A (zh) * 2014-08-12 2016-02-16 Nat Univ Chung Hsing 生醫檢測晶片及以之進行檢測之方法

Also Published As

Publication number Publication date
US20200248300A1 (en) 2020-08-06
WO2017079854A1 (es) 2017-05-18

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