CH625075A5 - - Google Patents
Download PDFInfo
- Publication number
- CH625075A5 CH625075A5 CH188978A CH188978A CH625075A5 CH 625075 A5 CH625075 A5 CH 625075A5 CH 188978 A CH188978 A CH 188978A CH 188978 A CH188978 A CH 188978A CH 625075 A5 CH625075 A5 CH 625075A5
- Authority
- CH
- Switzerland
- Prior art keywords
- transistor
- memory element
- gate
- electrode
- terminal
- Prior art date
Links
- 238000007667 floating Methods 0.000 claims description 48
- 230000015654 memory Effects 0.000 claims description 36
- 239000000758 substrate Substances 0.000 claims description 17
- 238000002347 injection Methods 0.000 claims description 15
- 239000007924 injection Substances 0.000 claims description 15
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 10
- 238000009792 diffusion process Methods 0.000 claims description 6
- 230000005684 electric field Effects 0.000 claims description 6
- 230000000295 complement effect Effects 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 17
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 8
- 230000000694 effects Effects 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 230000014759 maintenance of location Effects 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- XUFQPHANEAPEMJ-UHFFFAOYSA-N famotidine Chemical compound NC(N)=NC1=NC(CSCCC(N)=NS(N)(=O)=O)=CS1 XUFQPHANEAPEMJ-UHFFFAOYSA-N 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000000637 aluminium metallisation Methods 0.000 description 1
- 238000012217 deletion Methods 0.000 description 1
- 230000037430 deletion Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000002784 hot electron Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0441—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing multiple floating gate devices, e.g. separate read-and-write FAMOS transistors with connected floating gates
- G11C16/045—Floating gate memory cells with both P and N channel memory transistors, usually sharing a common floating gate
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0441—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing multiple floating gate devices, e.g. separate read-and-write FAMOS transistors with connected floating gates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2216/00—Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
- G11C2216/02—Structural aspects of erasable programmable read-only memories
- G11C2216/10—Floating gate memory cells with a single polysilicon layer
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
- Read Only Memory (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CH188978A CH625075A5 (ja) | 1978-02-22 | 1978-02-22 | |
DE19792906706 DE2906706A1 (de) | 1978-02-22 | 1979-02-21 | Speicherelement zum elektrisch wiederholt programmierbaren dauerhaften speichern |
JP1914179A JPS54122942A (en) | 1978-02-22 | 1979-02-22 | Electrically reprogrammable nonnvolatile memory |
US06/014,251 US4228527A (en) | 1978-02-22 | 1979-02-22 | Electrically reprogrammable non volatile memory |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CH188978A CH625075A5 (ja) | 1978-02-22 | 1978-02-22 |
Publications (1)
Publication Number | Publication Date |
---|---|
CH625075A5 true CH625075A5 (ja) | 1981-08-31 |
Family
ID=4220967
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CH188978A CH625075A5 (ja) | 1978-02-22 | 1978-02-22 |
Country Status (4)
Country | Link |
---|---|
US (1) | US4228527A (ja) |
JP (1) | JPS54122942A (ja) |
CH (1) | CH625075A5 (ja) |
DE (1) | DE2906706A1 (ja) |
Families Citing this family (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4317272A (en) * | 1979-10-26 | 1982-03-02 | Texas Instruments Incorporated | High density, electrically erasable, floating gate memory cell |
US4561004A (en) * | 1979-10-26 | 1985-12-24 | Texas Instruments | High density, electrically erasable, floating gate memory cell |
EP0061512B1 (de) * | 1981-04-01 | 1985-09-18 | Deutsche ITT Industries GmbH | Integrierte Schaltungsanordnung zum Schreiben, Lesen und Löschen von Speichermatrizen mit Isolierschicht-Feldeffekttransistoren nichtflüchtigen Speicherverhaltens |
JPS57194565A (en) * | 1981-05-25 | 1982-11-30 | Toshiba Corp | Semiconductor memory device |
CA1212428A (en) * | 1982-09-30 | 1986-10-07 | James M. Cartwright, Jr. | Electrically erasable programmable electronic circuits |
US4596938A (en) * | 1982-09-30 | 1986-06-24 | Rca Corporation | Electrically erasable programmable electronic circuits using programmable-threshold-voltage FET pairs |
US4590503A (en) * | 1983-07-21 | 1986-05-20 | Honeywell Inc. | Electrically erasable programmable read only memory |
US4785199A (en) * | 1983-11-28 | 1988-11-15 | Stanford University | Programmable complementary transistors |
US4571704A (en) * | 1984-02-17 | 1986-02-18 | Hughes Aircraft Company | Nonvolatile latch |
JPS61105862A (ja) * | 1984-10-30 | 1986-05-23 | Toshiba Corp | 半導体装置 |
JPH0770230B2 (ja) * | 1985-04-18 | 1995-07-31 | 日本電気株式会社 | 半導体メモリ |
JPS61289598A (ja) * | 1985-06-17 | 1986-12-19 | Toshiba Corp | 読出専用半導体記憶装置 |
US4797856A (en) * | 1987-04-16 | 1989-01-10 | Intel Corporation | Self-limiting erase scheme for EEPROM |
US4885719A (en) * | 1987-08-19 | 1989-12-05 | Ict International Cmos Technology, Inc. | Improved logic cell array using CMOS E2 PROM cells |
US4866307A (en) * | 1988-04-20 | 1989-09-12 | Texas Instruments Incorporated | Integrated programmable bit circuit using single-level poly construction |
US4862019A (en) * | 1988-04-20 | 1989-08-29 | Texas Instruments Incorporated | Single-level poly programmable bit circuit |
US5016217A (en) * | 1988-05-17 | 1991-05-14 | Ict International Cmos Technology, Inc. | Logic cell array using CMOS EPROM cells having reduced chip surface area |
EP0478573A4 (en) * | 1989-06-20 | 1992-07-08 | Xicor, Inc | An improved programmable semi-conductor resistive element |
JPH03179780A (ja) * | 1989-12-07 | 1991-08-05 | Fujitsu Ltd | 半導体装置 |
JP2596695B2 (ja) * | 1993-05-07 | 1997-04-02 | インターナショナル・ビジネス・マシーンズ・コーポレイション | Eeprom |
US5604700A (en) * | 1995-07-28 | 1997-02-18 | Motorola, Inc. | Non-volatile memory cell having a single polysilicon gate |
US7020027B1 (en) * | 2004-07-08 | 2006-03-28 | National Semiconductor Corporation | Programming method for nonvolatile memory cell |
US6992927B1 (en) * | 2004-07-08 | 2006-01-31 | National Semiconductor Corporation | Nonvolatile memory cell |
US6985386B1 (en) * | 2004-07-08 | 2006-01-10 | National Semiconductor Corporation | Programming method for nonvolatile memory cell |
US20080310237A1 (en) * | 2007-06-18 | 2008-12-18 | Nantronics Semiconductor. Inc. | CMOS Compatible Single-Poly Non-Volatile Memory |
US8008070B2 (en) * | 2007-12-07 | 2011-08-30 | METAMEMS Corp. | Using coulomb forces to study charateristics of fluids and biological samples |
US7812336B2 (en) * | 2007-12-07 | 2010-10-12 | METAMEMS Corp. | Levitating substrate being charged by a non-volatile device and powered by a charged capacitor or bonding wire |
US20090149038A1 (en) * | 2007-12-07 | 2009-06-11 | Metamems Llc | Forming edge metallic contacts and using coulomb forces to improve ohmic contact |
US8159809B2 (en) * | 2007-12-07 | 2012-04-17 | METAMEMS Corp. | Reconfigurable system that exchanges substrates using coulomb forces to optimize a parameter |
US7965489B2 (en) * | 2007-12-07 | 2011-06-21 | METAMEMS Corp. | Using coulomb forces to form 3-D reconfigurable antenna structures |
US7728427B2 (en) * | 2007-12-07 | 2010-06-01 | Lctank Llc | Assembling stacked substrates that can form cylindrical inductors and adjustable transformers |
US7863651B2 (en) * | 2007-12-07 | 2011-01-04 | METAMEMS Corp. | Using multiple coulomb islands to reduce voltage stress |
US7946174B2 (en) * | 2007-12-07 | 2011-05-24 | METAMEMS Corp. | Decelerometer formed by levitating a substrate into equilibrium |
US8018009B2 (en) | 2007-12-07 | 2011-09-13 | METAMEMS Corp. | Forming large planar structures from substrates using edge Coulomb forces |
US8531848B2 (en) * | 2007-12-07 | 2013-09-10 | METAMEMS Corp. | Coulomb island and Faraday shield used to create adjustable Coulomb forces |
-
1978
- 1978-02-22 CH CH188978A patent/CH625075A5/fr not_active IP Right Cessation
-
1979
- 1979-02-21 DE DE19792906706 patent/DE2906706A1/de not_active Withdrawn
- 1979-02-22 JP JP1914179A patent/JPS54122942A/ja active Pending
- 1979-02-22 US US06/014,251 patent/US4228527A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE2906706A1 (de) | 1979-08-30 |
US4228527A (en) | 1980-10-14 |
JPS54122942A (en) | 1979-09-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CH625075A5 (ja) | ||
FR2692720A1 (fr) | Dispositif d'EPROM à couche unique de silicium polycristallin à effacement rapide. | |
TWI451562B (zh) | 操作具有氧化/氮化多層絕緣結構非揮發記憶胞之方法 | |
EP1495496B1 (fr) | Dispositif semiconducteur de memoire, non volatile, programmable et effacable electriquement, a une seule couche de materiau de grille, et plan memoire correspondant | |
FR2533740A1 (fr) | Memoire remanente | |
FR2484124A1 (fr) | Cellule de memoire remanente a " gachette " flottante, modifiable electriquement | |
US20020149061A1 (en) | Nonvolatile memory cell, operating method of the same and nonvolatile memory array | |
EP1768189B1 (fr) | Mémoire non volatile reprogrammable | |
CH631287A5 (fr) | Element de memoire non-volatile, electriquement reprogrammable. | |
EP0648375B1 (fr) | Memoire eeprom de type flash a triples grilles et son procede de fabrication | |
US8022466B2 (en) | Non-volatile memory cells having a polysilicon-containing, multi-layer insulating structure, memory arrays including the same and methods of operating the same | |
JPS58169959A (ja) | 電気的にプログラミング及び消去できるmosメモリ装置 | |
US4335391A (en) | Non-volatile semiconductor memory elements and methods of making | |
FR3021803A1 (fr) | Cellules memoire jumelles accessibles individuellement en lecture | |
FR2543726A1 (fr) | Cellule de memoire ram non volatile a transistors cmos a grille flottante commune | |
EP0543703B1 (fr) | Mémoire intégrée électriquement programmable à un seul transistor | |
EP0896370B1 (fr) | Dispositif de mémoire à grille flottante sur SOI et procédé de fabrication correspondant | |
US5677876A (en) | Flash EEPROM with impurity diffused layer in channel area and process of production of same | |
FR2511801A1 (fr) | Memoire d'informations et son procede de fabrication | |
US6841447B1 (en) | EEPROM device having an isolation-bounded tunnel capacitor and fabrication process | |
EP0296038B1 (fr) | Mémoire EPROM effaçable par impulsions | |
EP0162737B1 (fr) | Point-mémoire électriquement effaçable et reprogrammable, comportant une grille flottante au-dessus d'une grille de commande | |
CH633123A5 (en) | Electrically reprogrammable non-volatile memory element | |
FR2491666A1 (fr) | Dispositif semi-conducteur de memorisation, tel que par exemple une memoire dynamique a acces direct du type mos | |
FR2764736A1 (fr) | Cellule eeprom a un seul niveau de silicium polycristallin et zone tunnel auto-alignee |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PL | Patent ceased |