CH617725A5 - Device for continuous manufacture of preformed single crystals in the form of plates - Google Patents

Device for continuous manufacture of preformed single crystals in the form of plates Download PDF

Info

Publication number
CH617725A5
CH617725A5 CH127877A CH127877A CH617725A5 CH 617725 A5 CH617725 A5 CH 617725A5 CH 127877 A CH127877 A CH 127877A CH 127877 A CH127877 A CH 127877A CH 617725 A5 CH617725 A5 CH 617725A5
Authority
CH
Switzerland
Prior art keywords
crucible
single crystal
manufacture
allowing
capillary
Prior art date
Application number
CH127877A
Other languages
English (en)
French (fr)
Inventor
Jean Ricard
Original Assignee
Ugine Kuhlmann
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ugine Kuhlmann filed Critical Ugine Kuhlmann
Priority to US05/951,241 priority Critical patent/US4181161A/en
Publication of CH617725A5 publication Critical patent/CH617725A5/fr

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/08—Downward pulling

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
CH127877A 1977-01-11 1977-02-02 Device for continuous manufacture of preformed single crystals in the form of plates CH617725A5 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US05/951,241 US4181161A (en) 1977-02-02 1978-10-13 Method of producing a high vacuum in a container

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7700572A FR2376697A2 (fr) 1977-01-11 1977-01-11 Dispositif de fabrication en continu de monocristaux preformes en forme de plaques

Publications (1)

Publication Number Publication Date
CH617725A5 true CH617725A5 (en) 1980-06-13

Family

ID=9185325

Family Applications (1)

Application Number Title Priority Date Filing Date
CH127877A CH617725A5 (en) 1977-01-11 1977-02-02 Device for continuous manufacture of preformed single crystals in the form of plates

Country Status (6)

Country Link
JP (1) JPS5919914B2 (it)
CH (1) CH617725A5 (it)
DE (1) DE2704913C2 (it)
FR (1) FR2376697A2 (it)
GB (1) GB1572915A (it)
IT (1) IT1117104B (it)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4430305A (en) * 1979-02-12 1984-02-07 Mobil Solar Energy Corporation Displaced capillary dies
FR2528454A1 (fr) * 1982-06-11 1983-12-16 Criceram Creuset modifie pour la methode de cristallisation par goutte pendante
DE3231268A1 (de) * 1982-08-23 1984-02-23 Siemens AG, 1000 Berlin und 8000 München Verfahren und vorrichtung zum asymmetrischen beschichten eines bandfoermigen traegerkoerpers mit silizium fuer die weiterverarbeitung zu solarzellen
DE3231267A1 (de) * 1982-08-23 1984-02-23 Siemens AG, 1000 Berlin und 8000 München Verfahren und vorrichtung zum asymmetrischen beschichten eines bandfoermigen traegerkoerpers mit silizium fuer die weiterverarbeitung zu solarzellen
DE3240245A1 (de) * 1982-10-29 1984-05-03 Siemens AG, 1000 Berlin und 8000 München Vorrichtung zum herstellen von bandfoermigen siliziumkoerpern fuer solarzellen
US7691199B2 (en) 2004-06-18 2010-04-06 Memc Electronic Materials, Inc. Melter assembly and method for charging a crystal forming apparatus with molten source material
KR101716322B1 (ko) * 2016-04-11 2017-03-27 주식회사 디에프아이 호모시스테인 측정수단 및 그 제조방법

Also Published As

Publication number Publication date
GB1572915A (en) 1980-08-06
DE2704913A1 (de) 1978-07-13
DE2704913C2 (de) 1983-09-15
IT1117104B (it) 1986-02-10
FR2376697B2 (it) 1981-04-30
FR2376697A2 (fr) 1978-08-04
JPS5919914B2 (ja) 1984-05-09
JPS5387984A (en) 1978-08-02

Similar Documents

Publication Publication Date Title
FR2511708A1 (fr) Procede et appareil pour regler l'atmosphere entourant une zone de croissance cristalline
FR2602503A1 (fr) Procede et appareillage pour la purification du silicium
CN101849043A (zh) 单晶制造装置及制造方法
FR2590076A1 (fr) Dispositif capteur d'image du type etat solide avec repartition uniforme d'agent de dopage, et son procede de production
CH617725A5 (en) Device for continuous manufacture of preformed single crystals in the form of plates
JP2007197230A (ja) 酸化アルミニウム単結晶の製造方法及びこの方法を用いて得られる酸化アルミニウム単結晶
US20050066881A1 (en) Continuous production method for crystalline silicon and production apparatus for the same
FR2570088A1 (fr) Appareil et procede pour faire croitre horizontalement, sans creuset, des cristaux de silicium en feuille
Bilgram et al. Perfection of zone refined ice single crystals
JP4904862B2 (ja) 酸化アルミニウム単結晶の製造方法及び得られる酸化アルミニウム単結晶
CH651325A5 (fr) Creuset pour la fabrication de monocristaux par la methode de cristallisation par goutte pendante.
WO2008132323A2 (fr) Dispositif et procédé de fabrication de plaques autosupportées de silicium ou autres matériaux cristallins
CH619007A5 (en) Process and device for the manufacture of preformed single crystals with multiple doping
Shih et al. Preparation of crystalline CuInSe2 by directional freezing
JPS598695A (ja) 結晶成長装置
RU2054495C1 (ru) Способ выращивания монокристаллов арсенида галлия для изготовления подложек интегральных схем
JP6885286B2 (ja) シリコン単結晶の製造方法
FR2927910A1 (fr) Procede de cristallogenese d'un materiau electriquement conducteur a l'etat fondu.
WO2016034501A1 (fr) Procede de fabrication d'un substrat de silicium
JPS6111920B2 (it)
EP0214350B1 (fr) Procédé de préparation d'un alliage polycristallin destiné à la réalisation de monocristaux par passage dans une zone de solvant
JPS5988393A (ja) ３−５族化合物単結晶の製造方法
JPH0867593A (ja) 単結晶の成長方法
JPH05294791A (ja) 多結晶基板の製造方法および製造装置
EP1154047A1 (fr) Installation de fabrication en continu de barreau de silicium multicristallin

Legal Events

Date Code Title Description
PL Patent ceased