CH617725A5 - Device for continuous manufacture of preformed single crystals in the form of plates - Google Patents
Device for continuous manufacture of preformed single crystals in the form of plates Download PDFInfo
- Publication number
- CH617725A5 CH617725A5 CH127877A CH127877A CH617725A5 CH 617725 A5 CH617725 A5 CH 617725A5 CH 127877 A CH127877 A CH 127877A CH 127877 A CH127877 A CH 127877A CH 617725 A5 CH617725 A5 CH 617725A5
- Authority
- CH
- Switzerland
- Prior art keywords
- crucible
- single crystal
- manufacture
- allowing
- capillary
- Prior art date
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 39
- 238000004519 manufacturing process Methods 0.000 title claims description 18
- 238000010438 heat treatment Methods 0.000 claims abstract description 9
- 239000000463 material Substances 0.000 claims description 19
- 239000012768 molten material Substances 0.000 claims description 5
- 230000014759 maintenance of location Effects 0.000 claims description 4
- 230000001105 regulatory effect Effects 0.000 claims description 4
- 238000001816 cooling Methods 0.000 claims description 3
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 abstract description 8
- 229910052710 silicon Inorganic materials 0.000 abstract description 5
- 239000010703 silicon Substances 0.000 abstract description 5
- 239000011780 sodium chloride Substances 0.000 abstract description 4
- 239000010453 quartz Substances 0.000 abstract description 3
- 229910052594 sapphire Inorganic materials 0.000 abstract description 3
- 239000010980 sapphire Substances 0.000 abstract description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 3
- 239000010979 ruby Substances 0.000 abstract description 2
- 229910001750 ruby Inorganic materials 0.000 abstract description 2
- 229910052727 yttrium Inorganic materials 0.000 abstract description 2
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 abstract description 2
- 239000007788 liquid Substances 0.000 description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 238000002844 melting Methods 0.000 description 5
- 230000008018 melting Effects 0.000 description 5
- 238000002425 crystallisation Methods 0.000 description 4
- 230000008025 crystallization Effects 0.000 description 4
- 238000010924 continuous production Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000011863 silicon-based powder Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- 238000012835 hanging drop method Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/08—Downward pulling
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/951,241 US4181161A (en) | 1977-02-02 | 1978-10-13 | Method of producing a high vacuum in a container |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7700572A FR2376697A2 (fr) | 1977-01-11 | 1977-01-11 | Dispositif de fabrication en continu de monocristaux preformes en forme de plaques |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CH617725A5 true CH617725A5 (en) | 1980-06-13 |
Family
ID=9185325
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CH127877A CH617725A5 (en) | 1977-01-11 | 1977-02-02 | Device for continuous manufacture of preformed single crystals in the form of plates |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPS5919914B2 (enrdf_load_stackoverflow) |
| CH (1) | CH617725A5 (enrdf_load_stackoverflow) |
| DE (1) | DE2704913C2 (enrdf_load_stackoverflow) |
| FR (1) | FR2376697A2 (enrdf_load_stackoverflow) |
| GB (1) | GB1572915A (enrdf_load_stackoverflow) |
| IT (1) | IT1117104B (enrdf_load_stackoverflow) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4430305A (en) | 1979-02-12 | 1984-02-07 | Mobil Solar Energy Corporation | Displaced capillary dies |
| FR2528454A1 (fr) * | 1982-06-11 | 1983-12-16 | Criceram | Creuset modifie pour la methode de cristallisation par goutte pendante |
| DE3231267A1 (de) * | 1982-08-23 | 1984-02-23 | Siemens AG, 1000 Berlin und 8000 München | Verfahren und vorrichtung zum asymmetrischen beschichten eines bandfoermigen traegerkoerpers mit silizium fuer die weiterverarbeitung zu solarzellen |
| DE3231268A1 (de) * | 1982-08-23 | 1984-02-23 | Siemens AG, 1000 Berlin und 8000 München | Verfahren und vorrichtung zum asymmetrischen beschichten eines bandfoermigen traegerkoerpers mit silizium fuer die weiterverarbeitung zu solarzellen |
| DE3240245A1 (de) * | 1982-10-29 | 1984-05-03 | Siemens AG, 1000 Berlin und 8000 München | Vorrichtung zum herstellen von bandfoermigen siliziumkoerpern fuer solarzellen |
| US7691199B2 (en) | 2004-06-18 | 2010-04-06 | Memc Electronic Materials, Inc. | Melter assembly and method for charging a crystal forming apparatus with molten source material |
| KR101716322B1 (ko) * | 2016-04-11 | 2017-03-27 | 주식회사 디에프아이 | 호모시스테인 측정수단 및 그 제조방법 |
-
1977
- 1977-01-11 FR FR7700572A patent/FR2376697A2/fr active Granted
- 1977-02-02 GB GB424377A patent/GB1572915A/en not_active Expired
- 1977-02-02 CH CH127877A patent/CH617725A5/fr not_active IP Right Cessation
- 1977-02-05 DE DE19772704913 patent/DE2704913C2/de not_active Expired
- 1977-02-07 JP JP1170777A patent/JPS5919914B2/ja not_active Expired
- 1977-02-07 IT IT6727077A patent/IT1117104B/it active
Also Published As
| Publication number | Publication date |
|---|---|
| FR2376697B2 (enrdf_load_stackoverflow) | 1981-04-30 |
| GB1572915A (en) | 1980-08-06 |
| IT1117104B (it) | 1986-02-10 |
| FR2376697A2 (fr) | 1978-08-04 |
| DE2704913C2 (de) | 1983-09-15 |
| DE2704913A1 (de) | 1978-07-13 |
| JPS5919914B2 (ja) | 1984-05-09 |
| JPS5387984A (en) | 1978-08-02 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PL | Patent ceased | ||
| PL | Patent ceased |