CH616024A5 - - Google Patents
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- Publication number
- CH616024A5 CH616024A5 CH563777A CH563777A CH616024A5 CH 616024 A5 CH616024 A5 CH 616024A5 CH 563777 A CH563777 A CH 563777A CH 563777 A CH563777 A CH 563777A CH 616024 A5 CH616024 A5 CH 616024A5
- Authority
- CH
- Switzerland
- Prior art keywords
- transistors
- channel
- doping
- substrate
- transistor
- Prior art date
Links
- 238000009792 diffusion process Methods 0.000 claims description 25
- 239000000758 substrate Substances 0.000 claims description 20
- 230000000295 complement effect Effects 0.000 claims description 7
- 230000000873 masking effect Effects 0.000 claims description 7
- 239000002019 doping agent Substances 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 4
- 238000005516 engineering process Methods 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 10
- 238000000034 method Methods 0.000 description 10
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000000750 progressive effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000001151 other effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000002226 simultaneous effect Effects 0.000 description 1
- 230000001502 supplementing effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7838—Field effect transistors with field effect produced by an insulated gate without inversion channel, e.g. buried channel lateral MISFETs, normally-on lateral MISFETs, depletion-mode lateral MISFETs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/8605—Resistors with PN junctions
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CH563777A CH616024A5 (xx) | 1977-05-05 | 1977-05-05 | |
| US05/898,681 US4205342A (en) | 1977-05-05 | 1978-04-21 | Integrated circuit structure having regions of doping concentration intermediate that of a substrate and a pocket formed therein |
| JP5242878A JPS549589A (en) | 1977-05-05 | 1978-05-02 | Ic using complementary mos transistor |
| DE19782819861 DE2819861A1 (de) | 1977-05-05 | 1978-05-05 | Integrierte schaltung mit komplementaeren mos-transistoren |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CH563777A CH616024A5 (xx) | 1977-05-05 | 1977-05-05 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CH616024A5 true CH616024A5 (xx) | 1980-02-29 |
Family
ID=4296944
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CH563777A CH616024A5 (xx) | 1977-05-05 | 1977-05-05 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US4205342A (xx) |
| JP (1) | JPS549589A (xx) |
| CH (1) | CH616024A5 (xx) |
| DE (1) | DE2819861A1 (xx) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4295897B1 (en) * | 1979-10-03 | 1997-09-09 | Texas Instruments Inc | Method of making cmos integrated circuit device |
| US4391650A (en) * | 1980-12-22 | 1983-07-05 | Ncr Corporation | Method for fabricating improved complementary metal oxide semiconductor devices |
| NL8304035A (nl) * | 1983-11-24 | 1985-06-17 | Philips Nv | Blooming ongevoelige beeldopneeminrichting en werkwijze ter vervaardiging daarvan. |
| EP0182876B1 (en) * | 1984-05-25 | 1990-10-24 | American Microsystems, Incorporated | Tri-well cmos technology |
| JPS61229366A (ja) * | 1985-04-03 | 1986-10-13 | Rohm Co Ltd | 半導体装置の製造方法 |
| JPS61229367A (ja) * | 1985-04-04 | 1986-10-13 | Rohm Co Ltd | 半導体装置およびその製造方法 |
| US4717836A (en) * | 1986-02-04 | 1988-01-05 | Burr-Brown Corporation | CMOS input level shifting circuit with temperature-compensating n-channel field effect transistor structure |
| JPS6384067A (ja) * | 1986-09-27 | 1988-04-14 | Toshiba Corp | 半導体装置の製造方法 |
| JPH0191446A (ja) * | 1987-10-02 | 1989-04-11 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
| US6211555B1 (en) | 1998-09-29 | 2001-04-03 | Lsi Logic Corporation | Semiconductor device with a pair of transistors having dual work function gate electrodes |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3374406A (en) * | 1964-06-01 | 1968-03-19 | Rca Corp | Insulated-gate field-effect transistor |
| US3436622A (en) * | 1966-12-20 | 1969-04-01 | Texas Instruments Inc | Compound channel insulated gate triode |
| US3593069A (en) * | 1969-10-08 | 1971-07-13 | Nat Semiconductor Corp | Integrated circuit resistor and method of making the same |
| US3608189A (en) * | 1970-01-07 | 1971-09-28 | Gen Electric | Method of making complementary field-effect transistors by single step diffusion |
| US3646665A (en) * | 1970-05-22 | 1972-03-07 | Gen Electric | Complementary mis-fet devices and method of fabrication |
| US3821776A (en) * | 1970-12-28 | 1974-06-28 | Kogyo Gijutsuin | Diffusion self aligned mosfet with pinch off isolation |
| US3898105A (en) * | 1973-10-25 | 1975-08-05 | Mostek Corp | Method for making FET circuits |
| US3967295A (en) * | 1975-04-03 | 1976-06-29 | Rca Corporation | Input transient protection for integrated circuit element |
-
1977
- 1977-05-05 CH CH563777A patent/CH616024A5/fr not_active IP Right Cessation
-
1978
- 1978-04-21 US US05/898,681 patent/US4205342A/en not_active Expired - Lifetime
- 1978-05-02 JP JP5242878A patent/JPS549589A/ja active Pending
- 1978-05-05 DE DE19782819861 patent/DE2819861A1/de not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| JPS549589A (en) | 1979-01-24 |
| US4205342A (en) | 1980-05-27 |
| DE2819861A1 (de) | 1978-11-09 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PL | Patent ceased |