CH604370A5 - - Google Patents

Info

Publication number
CH604370A5
CH604370A5 CH1212976A CH1212976A CH604370A5 CH 604370 A5 CH604370 A5 CH 604370A5 CH 1212976 A CH1212976 A CH 1212976A CH 1212976 A CH1212976 A CH 1212976A CH 604370 A5 CH604370 A5 CH 604370A5
Authority
CH
Switzerland
Application number
CH1212976A
Inventor
James Kent Howard
Paul Siu-Chung Ho
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of CH604370A5 publication Critical patent/CH604370A5/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5806—Thermal treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5893—Mixing of deposited material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
    • H01B1/023—Alloys based on aluminium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/06—Thin magnetic films, e.g. of one-domain structure characterised by the coupling or physical contact with connecting or interacting conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/32051—Deposition of metallic or metal-silicide layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53214—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being aluminium
    • H01L23/53219—Aluminium alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53214—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being aluminium
    • H01L23/53223—Additional layers associated with aluminium layers, e.g. adhesion, barrier, cladding layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/02—Contacts, special
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49121—Beam lead frame or beam lead device
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49204—Contact or terminal manufacturing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12486—Laterally noncoextensive components [e.g., embedded, etc.]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Thermal Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Magnetic Heads (AREA)
  • Conductive Materials (AREA)
  • Electronic Switches (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
  • Light Receiving Elements (AREA)
CH1212976A 1975-10-24 1976-09-24 CH604370A5 (sk)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/625,439 US4017890A (en) 1975-10-24 1975-10-24 Intermetallic compound layer in thin films for improved electromigration resistance

Publications (1)

Publication Number Publication Date
CH604370A5 true CH604370A5 (sk) 1978-09-15

Family

ID=24506084

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1212976A CH604370A5 (sk) 1975-10-24 1976-09-24

Country Status (13)

Country Link
US (2) US4017890A (sk)
JP (1) JPS5252585A (sk)
BE (1) BE845722A (sk)
BR (1) BR7607131A (sk)
CA (1) CA1056511A (sk)
CH (1) CH604370A5 (sk)
DE (1) DE2647566B2 (sk)
ES (1) ES452516A1 (sk)
FR (1) FR2329070A1 (sk)
GB (1) GB1513077A (sk)
IT (1) IT1077019B (sk)
NL (1) NL7610297A (sk)
SE (1) SE435125B (sk)

Families Citing this family (67)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4310568A (en) * 1976-12-29 1982-01-12 International Business Machines Corporation Method of fabricating improved Schottky barrier contacts
US4141020A (en) * 1976-12-29 1979-02-20 International Business Machines Corporation Intermetallic aluminum-transition metal compound Schottky contact
US4166279A (en) * 1977-12-30 1979-08-28 International Business Machines Corporation Electromigration resistance in gold thin film conductors
US4296424A (en) * 1978-03-27 1981-10-20 Asahi Kasei Kogyo Kabushiki Kaisha Compound semiconductor device having a semiconductor-converted conductive region
US4201999A (en) * 1978-09-22 1980-05-06 International Business Machines Corporation Low barrier Schottky diodes
US4433004A (en) * 1979-07-11 1984-02-21 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor device and a method for manufacturing the same
DE3071878D1 (en) * 1979-11-30 1987-02-05 Western Electric Co Fine-line solid state device
US4268584A (en) * 1979-12-17 1981-05-19 International Business Machines Corporation Nickel-X/gold/nickel-X conductors for solid state devices where X is phosphorus, boron, or carbon
NL183380C (nl) * 1979-12-27 1988-10-03 Asahi Chemical Ind Van een patroon voorziene en een dikke laag omvattende geleiderconstructie en werkwijze voor het vervaardigen daarvan.
DE3003285A1 (de) * 1980-01-30 1981-08-06 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen niederohmiger, einkristalliner metall- oder legierungsschichten auf substraten
JPS5747678A (en) * 1980-09-03 1982-03-18 Hitachi Ltd Heat-sensitive recording head
DE3139487A1 (de) * 1981-10-03 1983-04-21 Philips Patentverwaltung Gmbh, 2000 Hamburg "verfahren zum herstellen einer magnetischen speicherschicht"
DE3140669A1 (de) * 1981-10-13 1983-04-28 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von halbleitervorrichtungen
US4525734A (en) * 1983-03-21 1985-06-25 Syracuse University Hydrogen charged thin film conductor
US4585672A (en) * 1983-03-21 1986-04-29 Syracuse University Hydrogen charged thin film conductor
US4586063A (en) * 1984-04-02 1986-04-29 Oki Electric Industry Co., Ltd. Schottky barrier gate FET including tungsten-aluminum alloy
US4566177A (en) * 1984-05-11 1986-01-28 Signetics Corporation Formation of electromigration resistant aluminum alloy conductors
US4525221A (en) * 1984-05-16 1985-06-25 Rca Corporation Alloying of aluminum metallization
US4577212A (en) * 1984-06-29 1986-03-18 International Business Machines Corporation Structure for inhibiting forward bias beta degradation
IT1213261B (it) * 1984-12-20 1989-12-14 Sgs Thomson Microelectronics Dispositivo a semiconduttore con metallizzazione a piu' spessori eprocedimento per la sua fabbricazione.
US5111276A (en) * 1985-03-19 1992-05-05 National Semiconductor Corp. Thick bus metallization interconnect structure to reduce bus area
US4851895A (en) * 1985-05-06 1989-07-25 American Telephone And Telegraph Company, At&T Bell Laboratories Metallization for integrated devices
US4950520A (en) * 1985-12-27 1990-08-21 Pioneer Electronic Corporation Optical recording medium and method manufacturing thereof
US4725877A (en) * 1986-04-11 1988-02-16 American Telephone And Telegraph Company, At&T Bell Laboratories Metallized semiconductor device including an interface layer
EP0249256B1 (en) * 1986-04-14 1992-01-22 Koninklijke Philips Electronics N.V. A semiconductor device with an aluminium interconnect layer containing a small percentage of vanadium
JPH0687464B2 (ja) * 1986-12-17 1994-11-02 日本電装株式会社 アルミニウム合金配線装置およびその製造方法
JP2631369B2 (ja) * 1987-01-19 1997-07-16 三菱電機株式会社 半導体装置
US4847675A (en) * 1987-05-07 1989-07-11 The Aerospace Corporation Stable rare-earth alloy graded junction contact devices using III-V type substrates
JP2593319B2 (ja) * 1987-10-09 1997-03-26 株式会社アサヒ電子研究所 ファイル等被検索物の個別検索装置
US4839715A (en) * 1987-08-20 1989-06-13 International Business Machines Corporation Chip contacts without oxide discontinuities
JPH0193149A (ja) * 1987-10-02 1989-04-12 Mitsubishi Electric Corp 半導体装置
US5075755A (en) * 1987-10-20 1991-12-24 Bell Communications Research, Inc. Epitaxial intermetallic contact for compound semiconductors
US4963510A (en) * 1987-11-02 1990-10-16 Texas Instruments Incorporated Method and apparatus for providing interconnection between metallization layers on semiconductors devices
JPH0274039A (ja) * 1988-09-09 1990-03-14 Texas Instr Japan Ltd 電子回路装置
US5016081A (en) * 1989-03-22 1991-05-14 At&T Bell Laboratories Mobile ion getterer for metal conductors
US5227314A (en) * 1989-03-22 1993-07-13 At&T Bell Laboratories Method of making metal conductors having a mobile inn getterer therein
US5071714A (en) * 1989-04-17 1991-12-10 International Business Machines Corporation Multilayered intermetallic connection for semiconductor devices
US5171642A (en) * 1989-04-17 1992-12-15 International Business Machines Corporation Multilayered intermetallic connection for semiconductor devices
JP2781037B2 (ja) * 1989-12-20 1998-07-30 沖電気工業株式会社 電極配線の製造方法
US5074941A (en) * 1990-12-10 1991-12-24 Cornell Research Foundation, Inc. Enhancing bonding at metal-ceramic interfaces
US5173354A (en) * 1990-12-13 1992-12-22 Cornell Research Foundation, Inc. Non-beading, thin-film, metal-coated ceramic substrate
EP0521163B1 (en) * 1991-01-17 1997-05-28 Ryoka Matthey Corporation Aluminum alloy wiring layer, manufacturing thereof, and aluminum alloy sputtering target
US5345108A (en) * 1991-02-26 1994-09-06 Nec Corporation Semiconductor device having multi-layer electrode wiring
KR0123185B1 (ko) * 1991-09-30 1997-11-26 다니이 아끼오 알루미늄배선 및 그 형성방법
JP2946978B2 (ja) * 1991-11-29 1999-09-13 ソニー株式会社 配線形成方法
US6051490A (en) * 1991-11-29 2000-04-18 Sony Corporation Method of forming wirings
US5363794A (en) * 1992-12-02 1994-11-15 The Board Of Trustees Of The Leland Stanford Junior University Uniaxial thin film structures formed from oriented bilayers and multilayers
US5367195A (en) * 1993-01-08 1994-11-22 International Business Machines Corporation Structure and method for a superbarrier to prevent diffusion between a noble and a non-noble metal
JP3379049B2 (ja) * 1993-10-27 2003-02-17 富士通株式会社 表面弾性波素子とその製造方法
US6597067B1 (en) 1994-02-28 2003-07-22 International Business Machines Corporation Self-aligned, lateral diffusion barrier in metal lines to eliminate electromigration
US5470788A (en) * 1994-02-28 1995-11-28 International Business Machines Corporation Method of making self-aligned, lateral diffusion barrier in metal lines to eliminate electromigration
JP2754176B2 (ja) * 1995-03-13 1998-05-20 エルジイ・セミコン・カンパニイ・リミテッド 緻密なチタン窒化膜及び緻密なチタン窒化膜／薄膜のチタンシリサイドの形成方法及びこれを用いた半導体素子の製造方法
JPH09115829A (ja) * 1995-10-17 1997-05-02 Nissan Motor Co Ltd アルミニウム配線部を有する半導体装置およびその製造方法
US5777356A (en) * 1996-01-03 1998-07-07 Bell Communications Research, Inc. Platinum-free ferroelectric memory cell with intermetallic barrier layer and method of making same
US5700718A (en) * 1996-02-05 1997-12-23 Micron Technology, Inc. Method for increased metal interconnect reliability in situ formation of titanium aluminide
US6200894B1 (en) 1996-06-10 2001-03-13 International Business Machines Corporation Method for enhancing aluminum interconnect properties
US6130161A (en) 1997-05-30 2000-10-10 International Business Machines Corporation Method of forming copper interconnections with enhanced electromigration resistance and reduced defect sensitivity
US6069068A (en) * 1997-05-30 2000-05-30 International Business Machines Corporation Sub-quarter-micron copper interconnections with improved electromigration resistance and reduced defect sensitivity
JP4083921B2 (ja) * 1998-05-29 2008-04-30 株式会社東芝 半導体装置の製造方法
JP3437801B2 (ja) * 1999-07-28 2003-08-18 沖電気工業株式会社 半導体装置のための配線構造および配線形成方法
WO2001041304A1 (fr) * 1999-11-30 2001-06-07 Tdk Corporation Dispositif a onde acoustique de surface et procede de production correspondant
JP3402311B2 (ja) * 2000-05-19 2003-05-06 株式会社村田製作所 弾性表面波装置
US6794753B2 (en) * 2002-12-27 2004-09-21 Lexmark International, Inc. Diffusion barrier and method therefor
JP5216184B2 (ja) * 2004-12-07 2013-06-19 富士通株式会社 化合物半導体装置およびその製造方法
US8003536B2 (en) * 2009-03-18 2011-08-23 International Business Machines Corporation Electromigration resistant aluminum-based metal interconnect structure
JP5464218B2 (ja) * 2012-02-01 2014-04-09 富士通株式会社 窒化ガリウム系ｈｅｍｔの製造方法及び窒化ガリウム系ｈｅｍｔ
CN103651152B (zh) * 2013-12-02 2015-11-25 上海开纯洁净室技术工程有限公司 无特定病原猪的饲养环境系统

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL298353A (sk) * 1963-09-25
NL87258C (sk) * 1969-01-15
US3830657A (en) * 1971-06-30 1974-08-20 Ibm Method for making integrated circuit contact structure
US3743894A (en) * 1972-06-01 1973-07-03 Motorola Inc Electromigration resistant semiconductor contacts and the method of producing same
GB1384028A (en) * 1972-08-21 1974-02-12 Hughes Aircraft Co Method of making a semiconductor device
US4042954A (en) * 1975-05-19 1977-08-16 National Semiconductor Corporation Method for forming gang bonding bumps on integrated circuit semiconductor devices
US4035526A (en) * 1975-08-20 1977-07-12 General Motors Corporation Evaporated solderable multilayer contact for silicon semiconductor

Also Published As

Publication number Publication date
FR2329070A1 (fr) 1977-05-20
GB1513077A (en) 1978-06-07
SE435125B (sv) 1984-09-03
DE2647566B2 (de) 1978-06-22
SE7611757L (sv) 1977-04-25
BR7607131A (pt) 1977-09-13
DE2647566A1 (de) 1977-09-08
US4017890A (en) 1977-04-12
IT1077019B (it) 1985-04-27
JPS5252585A (en) 1977-04-27
US4154874A (en) 1979-05-15
NL7610297A (nl) 1977-04-26
JPS5531619B2 (sk) 1980-08-19
CA1056511A (en) 1979-06-12
BE845722A (fr) 1976-12-16
FR2329070B1 (sk) 1978-11-03
ES452516A1 (es) 1978-08-16

Similar Documents

Publication Publication Date Title
FR2329070B1 (sk)
FR2297261B1 (sk)
JPS534714Y2 (sk)
JPS5263499U (sk)
JPS51102553U (sk)
JPS51163804U (sk)
JPS5341156Y2 (sk)
JPS51131099U (sk)
JPS51131294U (sk)
JPS5286980U (sk)
JPS5212527U (sk)
JPS5261916U (sk)
BG22913A1 (sk)
BG22558A1 (sk)
CH589455A5 (sk)
CH588211A5 (sk)
CH586768A5 (sk)
CH581877A5 (sk)
CH536275A4 (sk)
BG26465A1 (sk)
CH591803A5 (sk)
CH591866A5 (sk)
BG23519A1 (sk)
BG23412A1 (sk)
CH596645A5 (sk)

Legal Events

Date Code Title Description
PL Patent ceased