CH559062A5 - - Google Patents

Info

Publication number
CH559062A5
CH559062A5 CH1415472A CH1415472A CH559062A5 CH 559062 A5 CH559062 A5 CH 559062A5 CH 1415472 A CH1415472 A CH 1415472A CH 1415472 A CH1415472 A CH 1415472A CH 559062 A5 CH559062 A5 CH 559062A5
Authority
CH
Switzerland
Application number
CH1415472A
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of CH559062A5 publication Critical patent/CH559062A5/xx

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00Measuring arrangements characterised by the use of optical techniques
    • G01B11/08Measuring arrangements characterised by the use of optical techniques for measuring diameters
    • G01B11/10Measuring arrangements characterised by the use of optical techniques for measuring diameters of objects while moving
    • G01B11/105Measuring arrangements characterised by the use of optical techniques for measuring diameters of objects while moving using photoelectric detection means
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20Controlling or regulating
    • C30B15/22Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C30B15/26Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using television detectors; using photo or X-ray detectors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
CH1415472A 1971-10-01 1972-09-28 CH559062A5 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19712149093 DE2149093C3 (de) 1971-10-01 1971-10-01 Vorrichtung zur Züchtung von Einkristallen durch Ziehen aus einer Schmelze

Publications (1)

Publication Number Publication Date
CH559062A5 true CH559062A5 (de) 1975-02-28

Family

ID=5821216

Family Applications (2)

Application Number Title Priority Date Filing Date
CH1415472A CH559062A5 (de) 1971-10-01 1972-09-28
CH1415372A CH558206A (de) 1971-10-01 1972-09-28 Verfahren zur herstellung eines einkristalles durch ziehen aus einer schmelze und vorrichtung zur ausfuehrung des verfahrens.

Family Applications After (1)

Application Number Title Priority Date Filing Date
CH1415372A CH558206A (de) 1971-10-01 1972-09-28 Verfahren zur herstellung eines einkristalles durch ziehen aus einer schmelze und vorrichtung zur ausfuehrung des verfahrens.

Country Status (10)

Country Link
JP (2) JPS5238512B2 (de)
AU (2) AU4716872A (de)
BE (2) BE789553A (de)
CA (1) CA997255A (de)
CH (2) CH559062A5 (de)
DE (1) DE2149093C3 (de)
FR (2) FR2154777B1 (de)
GB (2) GB1400593A (de)
IT (2) IT967977B (de)
NL (2) NL7213119A (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5612863B2 (de) * 1973-07-11 1981-03-25
JPS6033299A (ja) * 1983-07-29 1985-02-20 Toshiba Corp 単結晶の製造装置
JPS63307186A (ja) * 1987-06-05 1988-12-14 Shin Etsu Handotai Co Ltd 晶出結晶径制御装置
FI87660C (fi) * 1988-03-03 1993-02-10 Leybold Ag Foerfarande och anordning foer dragning av monokristaller
FI911857A (fi) * 1990-04-27 1991-10-28 Nippon Kokan Kk Foerfarande och apparat foer kontroll av diametern hos en enskild silikonkristall.
DE4301072B4 (de) * 1993-01-16 2006-08-24 Crystal Growing Systems Gmbh Verfahren zum Ziehen von Einkristallen aus einer Schmelze
CN115178756B (zh) * 2022-07-15 2023-05-12 中国科学院重庆绿色智能技术研究院 一种激光选区熔化瞬态熔池特征高分辨率成像装置及方法
CN115613121A (zh) * 2022-11-18 2023-01-17 浙江晶盛机电股份有限公司 晶体生产设备及籽晶的断裂方法

Also Published As

Publication number Publication date
CA997255A (en) 1976-09-21
JPS4842981A (de) 1973-06-21
JPS5238512B2 (de) 1977-09-29
JPS4842980A (de) 1973-06-21
DE2149093A1 (de) 1973-04-05
NL7213119A (de) 1973-04-03
AU4716872A (en) 1974-04-04
GB1400593A (en) 1975-07-16
FR2154777A1 (de) 1973-05-11
DE2149093B2 (de) 1974-12-05
FR2154776B1 (de) 1976-08-20
DE2149093C3 (de) 1975-07-24
BE789554A (fr) 1973-03-29
BE789553A (fr) 1973-03-29
AU4716772A (en) 1974-04-04
NL7213118A (de) 1973-04-03
IT967978B (it) 1974-03-11
FR2154776A1 (de) 1973-05-11
FR2154777B1 (de) 1976-08-20
CH558206A (de) 1975-01-31
IT967977B (it) 1974-03-11
JPS533757B2 (de) 1978-02-09
GB1405447A (en) 1975-09-10

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Legal Events

Date Code Title Description
PL Patent ceased