CH557090A - Verfahren zur herstellung eines p-kanal-feldeffekt-transistors oder einer integrierten schaltung mit p-kanalfeldeffekt-transistoren. - Google Patents
Verfahren zur herstellung eines p-kanal-feldeffekt-transistors oder einer integrierten schaltung mit p-kanalfeldeffekt-transistoren.Info
- Publication number
- CH557090A CH557090A CH1770172A CH1770172A CH557090A CH 557090 A CH557090 A CH 557090A CH 1770172 A CH1770172 A CH 1770172A CH 1770172 A CH1770172 A CH 1770172A CH 557090 A CH557090 A CH 557090A
- Authority
- CH
- Switzerland
- Prior art keywords
- field effect
- effect transistors
- channel field
- producing
- integrated circuit
- Prior art date
Links
- 230000005669 field effect Effects 0.000 title 2
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
- H10D30/6706—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device for preventing leakage current
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates
- H10D30/6759—Silicon-on-sapphire [SOS] substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/01—Manufacture or treatment
- H10D86/03—Manufacture or treatment wherein the substrate comprises sapphire, e.g. silicon-on-sapphire [SOS]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/053—Field effect transistors fets
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/909—Controlled atmosphere
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/91—Controlling charging state at semiconductor-insulator interface
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2208083A DE2208083A1 (de) | 1972-02-21 | 1972-02-21 | Verfahren zur herstellung von p-kanalfeldeffekt-transistoren |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CH557090A true CH557090A (de) | 1974-12-13 |
Family
ID=5836606
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CH1770172A CH557090A (de) | 1972-02-21 | 1972-12-05 | Verfahren zur herstellung eines p-kanal-feldeffekt-transistors oder einer integrierten schaltung mit p-kanalfeldeffekt-transistoren. |
Country Status (13)
| Country | Link |
|---|---|
| US (1) | US3885993A (cs) |
| JP (1) | JPS4897482A (cs) |
| AT (1) | AT339373B (cs) |
| BE (1) | BE795737A (cs) |
| CA (1) | CA980015A (cs) |
| CH (1) | CH557090A (cs) |
| DE (1) | DE2208083A1 (cs) |
| FR (1) | FR2173036B1 (cs) |
| GB (1) | GB1377030A (cs) |
| IT (1) | IT979276B (cs) |
| LU (1) | LU67059A1 (cs) |
| NL (1) | NL7301953A (cs) |
| SE (1) | SE382889B (cs) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4091527A (en) * | 1977-03-07 | 1978-05-30 | Rca Corporation | Method for adjusting the leakage current of silicon-on-sapphire insulated gate field effect transistors |
| DE3028718C2 (de) * | 1979-07-31 | 1982-08-19 | Sharp K.K., Osaka | Dünnfilmtransistor in Verbindung mit einer Anzeigevorrichtung |
| EP0051940B1 (en) * | 1980-11-06 | 1985-05-02 | National Research Development Corporation | Annealing process for a thin-film semiconductor device and obtained devices |
| US4525221A (en) * | 1984-05-16 | 1985-06-25 | Rca Corporation | Alloying of aluminum metallization |
| JP3516596B2 (ja) | 1998-10-19 | 2004-04-05 | 松下電器産業株式会社 | 半導体装置の製造方法 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1544261C3 (de) * | 1965-03-30 | 1975-12-18 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zum epitaktischen Abscheiden einer einkristallinen Schicht eines nach dem Diamant- oder nach Zinkblendegitter kristallisierenden Halbleitermaterials |
| US3413145A (en) * | 1965-11-29 | 1968-11-26 | Rca Corp | Method of forming a crystalline semiconductor layer on an alumina substrate |
| FR1493348A (fr) * | 1965-12-27 | 1967-08-25 | Rca Corp | Dispositif semi-conducteur métla-oxyde |
-
0
- BE BE795737D patent/BE795737A/xx unknown
-
1972
- 1972-02-21 DE DE2208083A patent/DE2208083A1/de active Pending
- 1972-12-05 CH CH1770172A patent/CH557090A/xx not_active IP Right Cessation
- 1972-12-06 AT AT1039872A patent/AT339373B/de active
- 1972-12-13 GB GB5759872A patent/GB1377030A/en not_active Expired
-
1973
- 1973-01-22 US US325616A patent/US3885993A/en not_active Expired - Lifetime
- 1973-02-12 NL NL7301953A patent/NL7301953A/xx unknown
- 1973-02-19 FR FR7305753A patent/FR2173036B1/fr not_active Expired
- 1973-02-19 LU LU67059A patent/LU67059A1/xx unknown
- 1973-02-20 IT IT20589/73A patent/IT979276B/it active
- 1973-02-20 CA CA164,089A patent/CA980015A/en not_active Expired
- 1973-02-20 SE SE7302357A patent/SE382889B/xx unknown
- 1973-02-21 JP JP48021150A patent/JPS4897482A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| SE382889B (sv) | 1976-02-16 |
| JPS4897482A (cs) | 1973-12-12 |
| BE795737A (fr) | 1973-06-18 |
| FR2173036A1 (cs) | 1973-10-05 |
| AT339373B (de) | 1977-10-10 |
| GB1377030A (en) | 1974-12-11 |
| IT979276B (it) | 1974-09-30 |
| LU67059A1 (cs) | 1973-04-19 |
| DE2208083A1 (de) | 1973-08-30 |
| ATA1039872A (de) | 1977-02-15 |
| CA980015A (en) | 1975-12-16 |
| NL7301953A (cs) | 1973-08-23 |
| US3885993A (en) | 1975-05-27 |
| FR2173036B1 (cs) | 1978-10-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CH553482A (de) | Verfahren zur herstellung einer halbleitervorrichtung mit komplementaeren feldeffekt-transistoren. | |
| CH553791A (de) | Verfahren zur herstellung neuer chinazolinone. | |
| ATA28973A (de) | Verfahren zur herstellung eines harzes bzw. seiner wasserigen losungen | |
| CH546634A (de) | Verfahren zur herstellung von schalenfoermigen kunststoffteilen. | |
| CH554928A (de) | Verfahren zur herstellung eines pigmentes. | |
| AT343284B (de) | Verfahren zur herstellung eines kalorienarmen nahrungsmittels | |
| AT278093B (de) | Verfahren zur Herstellung eines Transistors | |
| CH550848A (de) | Verfahren zur herstellung neuer tagesleuchtpigmente. | |
| CH557090A (de) | Verfahren zur herstellung eines p-kanal-feldeffekt-transistors oder einer integrierten schaltung mit p-kanalfeldeffekt-transistoren. | |
| CH556192A (de) | Verfahren zur herstellung eines calcit-einkristalls. | |
| CH551272A (de) | Verfahren zur stufenweisen herstellung eines gerippten kunststoffrohres. | |
| AT313542B (de) | Verfahren zur Herstellung eines Bauelements | |
| AT297250B (de) | Verfahren zur Herstellung eines Bauelementes | |
| CH546108A (de) | Verfahren zur herstellung eines metallischen gegenstandes. | |
| AT304066B (de) | Verfahren zur Herstellung eines Schichtkörpers | |
| AT326119B (de) | Verfahren zur herstellung von benzothiazolderivaten | |
| CH472455A (de) | Verfahren zur Herstellung eines gehärteten Kunststoffs | |
| CH481489A (de) | Verfahren zur Herstellung eines Transistors | |
| CH547855A (de) | Verfahren zur herstellung eines antibiotikums. | |
| CH554843A (de) | Verfahren zur herstellung eines hydrazids. | |
| CH554844A (de) | Verfahren zur herstellung eines hydrazids. | |
| CH549574A (de) | Verfahren zur herstellung neuer substituierter dioxopyrazolidine. | |
| AT327183B (de) | Verfahren zur herstellung neuer nitrofuranderivate | |
| AT348748B (de) | Verfahren zur herstellung von gummihandschuhen | |
| CH536028A (de) | Verfahren zur Herstellung einer monolithischen Vorrichtung mit isolierten Transistoren |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PL | Patent ceased | ||
| PL | Patent ceased |