CA980015A - Method for production of p-channel field effect transistors and product resulting therefrom - Google Patents

Method for production of p-channel field effect transistors and product resulting therefrom

Info

Publication number
CA980015A
CA980015A CA164,089A CA164089A CA980015A CA 980015 A CA980015 A CA 980015A CA 164089 A CA164089 A CA 164089A CA 980015 A CA980015 A CA 980015A
Authority
CA
Canada
Prior art keywords
production
field effect
effect transistors
channel field
resulting therefrom
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA164,089A
Other languages
English (en)
Other versions
CA164089S (en
Inventor
Jeno Tihanyi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Application granted granted Critical
Publication of CA980015A publication Critical patent/CA980015A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6706—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device for preventing leakage current 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates
    • H10D30/6759—Silicon-on-sapphire [SOS] substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/03—Manufacture or treatment wherein the substrate comprises sapphire, e.g. silicon-on-sapphire [SOS]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/053—Field effect transistors fets
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/909—Controlled atmosphere
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/91—Controlling charging state at semiconductor-insulator interface
CA164,089A 1972-02-21 1973-02-20 Method for production of p-channel field effect transistors and product resulting therefrom Expired CA980015A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2208083A DE2208083A1 (de) 1972-02-21 1972-02-21 Verfahren zur herstellung von p-kanalfeldeffekt-transistoren

Publications (1)

Publication Number Publication Date
CA980015A true CA980015A (en) 1975-12-16

Family

ID=5836606

Family Applications (1)

Application Number Title Priority Date Filing Date
CA164,089A Expired CA980015A (en) 1972-02-21 1973-02-20 Method for production of p-channel field effect transistors and product resulting therefrom

Country Status (13)

Country Link
US (1) US3885993A (cs)
JP (1) JPS4897482A (cs)
AT (1) AT339373B (cs)
BE (1) BE795737A (cs)
CA (1) CA980015A (cs)
CH (1) CH557090A (cs)
DE (1) DE2208083A1 (cs)
FR (1) FR2173036B1 (cs)
GB (1) GB1377030A (cs)
IT (1) IT979276B (cs)
LU (1) LU67059A1 (cs)
NL (1) NL7301953A (cs)
SE (1) SE382889B (cs)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4091527A (en) * 1977-03-07 1978-05-30 Rca Corporation Method for adjusting the leakage current of silicon-on-sapphire insulated gate field effect transistors
DE3028718C2 (de) * 1979-07-31 1982-08-19 Sharp K.K., Osaka Dünnfilmtransistor in Verbindung mit einer Anzeigevorrichtung
EP0051940B1 (en) * 1980-11-06 1985-05-02 National Research Development Corporation Annealing process for a thin-film semiconductor device and obtained devices
US4525221A (en) * 1984-05-16 1985-06-25 Rca Corporation Alloying of aluminum metallization
JP3516596B2 (ja) 1998-10-19 2004-04-05 松下電器産業株式会社 半導体装置の製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1544261C3 (de) * 1965-03-30 1975-12-18 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum epitaktischen Abscheiden einer einkristallinen Schicht eines nach dem Diamant- oder nach Zinkblendegitter kristallisierenden Halbleitermaterials
US3413145A (en) * 1965-11-29 1968-11-26 Rca Corp Method of forming a crystalline semiconductor layer on an alumina substrate
FR1493348A (fr) * 1965-12-27 1967-08-25 Rca Corp Dispositif semi-conducteur métla-oxyde

Also Published As

Publication number Publication date
SE382889B (sv) 1976-02-16
JPS4897482A (cs) 1973-12-12
BE795737A (fr) 1973-06-18
FR2173036A1 (cs) 1973-10-05
AT339373B (de) 1977-10-10
GB1377030A (en) 1974-12-11
IT979276B (it) 1974-09-30
CH557090A (de) 1974-12-13
LU67059A1 (cs) 1973-04-19
DE2208083A1 (de) 1973-08-30
ATA1039872A (de) 1977-02-15
NL7301953A (cs) 1973-08-23
US3885993A (en) 1975-05-27
FR2173036B1 (cs) 1978-10-20

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